CN105897219A - Wafer level surface acoustic filter chip packaging structure and manufacturing method thereof - Google Patents
Wafer level surface acoustic filter chip packaging structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN105897219A CN105897219A CN201610204644.1A CN201610204644A CN105897219A CN 105897219 A CN105897219 A CN 105897219A CN 201610204644 A CN201610204644 A CN 201610204644A CN 105897219 A CN105897219 A CN 105897219A
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- CN
- China
- Prior art keywords
- wafer
- sound filtering
- filtering chip
- laminating
- insulating barrier
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
Abstract
The invention relates to a wafer level surface acoustic filter chip packaging structure and a manufacturing method thereof. The structure comprises a surface acoustic filter chip wafer (1), and the surface of the surface acoustic filter chip wafer (1) includes electrode areas (1.1) and an induction area (1.2). A first metal layer (2) is arranged on the surface of each electrode area (1.1). An insulating layer (3) is arranged on the surface of the surface acoustic filter chip wafer (1). A laminated wafer (4) is arranged above the insulating layer (3). A cavity (7) is formed between the laminated wafer (4) and the induction area (1.2). The laminated wafer (4) is provided with holes (8) at the positions of the electrode areas (1.1), and a metal ball (6) is arranged in each hole (8). According to the wafer level surface acoustic filter chip packaging structure and the manufacturing method thereof of the invention, a surface acoustic filter of smaller area and size and lower manufacturing cost can be provided.
Description
Technical field
The present invention relates to a kind of wafer level surface sound filtering chip encapsulating structure and manufacture method thereof, belong to technical field of semiconductor encapsulation.
Background technology
Surface sound filter apparatus is widely used in RF and IF application, including pocket telephone, radiophone and various radio device.By using surface sound to filter, these electronic equipments are carried out the filtering of the signal of telecommunication, time delay etc. and processes.Because of surface acoustical filter properties of product and design function demand, need to ensure that filtering chip functional area can not contact any material, i.e. cavity structure design.
Existing surface acoustic filter part encapsulating structure is filtering chip to be passed through conductive projection flip chip bonding be connected with ceramic substrate and be embedded in completely in substrate cavity body, and substrate surface adds crown cap protection.But this kind of structural metal lid is relatively costly, and ceramic substrate compares high with the flatness requirement of crown cap, easily has the situation of close bad.Additionally the manufacture method of other surface acoustic filter parts is to use top sealing or coating process to be sealed module, forms cavity structure.
The method for packing of existing surface acoustic filter part, flow process is longer, relatively costly, and physical dimension is the biggest, under the trend trend that current electronic equipment does less and less, need constantly to reduce electronic installation and used in the weight of surface acoustic filter part and size.
Summary of the invention
The technical problem to be solved is to provide a kind of wafer level surface sound filtering chip encapsulating structure and manufacture method thereof for above-mentioned prior art, and it is provided that the surface acoustic filter part of a kind of less area and volume, and has lower manufacturing cost.
The present invention solves the technical scheme that the problems referred to above are used: a kind of wafer level surface sound filtering chip encapsulating structure, it includes surface sound filtering chip wafer, described surface sound filtering chip crystal column surface includes electrode zone and induction region, described electrode area surfaces is provided with the first metal layer, sound filtering chip wafer region in addition to electrode zone and induction region in described surface is provided with insulating barrier, described insulating barrier is provided above wafer of fitting, cavity is formed between described laminating wafer and induction region, described laminating wafer is provided with perforate in electrode zone position, it is provided with metal ball in described perforate, described metal ball contacts with the first metal layer.
Described laminating wafer is arranged on insulating barrier by adhesive glue.
A kind of manufacture method of wafer level surface sound filtering chip encapsulating structure, described method comprises the following steps that:
Step one, take a piece of surface sound filtering chip wafer；
Step 2, prepare the first metal layer at the electrode zone of surface sound filtering chip wafer；
Step 3, prepare insulating barrier
Being coated with one layer of insulating cement on the sound filtering chip wafer of surface with coating technique, with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；
Step 4, laminating wafer
Taking a piece of laminating wafer, be coated with last layer adhesive glue on laminating wafer, the surface sound filtering chip wafer preparing insulating barrier with step 3 fits together, thus forms cavity above chip induction region；
Step 5, etching
At laminating crystal column surface resist coating, and it is exposed, development, etching, needs the surface sound filtering wafer the first metal layer planting ball to come out follow-up, form perforate；
Step 6, plant ball
Carry out planting ball in the first metal layer position come out；
Step 7, cutting
Cutting is divided into single product.
Between described step 4 and step 5 to laminating wafer be ground, thinning.
Described insulating barrier uses B-stage glue, it may be unnecessary to is coated with adhesive glue on laminating wafer, directly fits.
Described laminating wafer uses glass material, insulant.
Compared with prior art, it is an advantage of the current invention that:
1, compared with traditional technique, integral production flow process is wafer scale, can form undersized encapsulating structure, and technique is simple, can guarantee that the cavity structure of chip induction zone, can form the wafer level surface sound filtering chip encapsulating structure that reliability is higher；
2, the wafer level surface sound filtering chip encapsulating structure of the present invention can directly use, it is also possible to total and other encapsulating structures are formed on substrate secondary encapsulation, forms system in package.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of a kind of wafer level of present invention surface sound filtering chip encapsulating structure.
Fig. 2 ~ Fig. 9 is the process chart of the manufacture method of a kind of wafer level of present invention surface sound filtering chip encapsulating structure.
Wherein:
Surface sound filtering chip wafer 1
Electrode zone 1.1
Induction region 1.2
The first metal layer 2
Insulating barrier 3
Laminating wafer 4
Adhesive glue 5
Metal ball 6
Cavity 7
Perforate 8.
Detailed description of the invention
Below in conjunction with accompanying drawing embodiment, the present invention is described in further detail.
As shown in Figure 1, a kind of wafer level surface sound filtering chip encapsulating structure in the present embodiment, it includes surface sound filtering chip wafer 1, sound filtering chip wafer 1 surface, described surface includes electrode zone 1.1 and induction region 1.2, described electrode zone 1.1 surface configuration has the first metal layer 2, the sound filtering chip wafer 1 region in addition to electrode zone 1.1 and induction region 1.2 in described surface is provided with insulating barrier 3, described the first metal layer 2 flushes with insulating barrier 3, above described insulating barrier 3, adhesive glue 5 is provided with laminating wafer 4, cavity 7 is formed between described laminating wafer 4 and induction region 1.2, described laminating wafer 4 is provided with perforate 8 in electrode zone 1.1 position, it is provided with metal ball 6 in described perforate 8, described metal ball 6 contacts with the first metal layer 2.
Its manufacture method comprises the following steps that:
Step one, see Fig. 2, take a piece of surface sound filtering chip wafer；
Step 2, seeing Fig. 3, the electrode zone at surface sound filtering chip wafer prepares the first metal layer；
Surface sound filtering chip wafer, by cleaning, toasts, sputtering, resist coating, photoetching, development, and copper electroplating layer removes photoresist, and the method for etching prepares the first metal layer at electrode zone；
Step 3, prepare insulating barrier
See Fig. 4, on the sound filtering chip wafer of surface, be coated with one layer of certain thickness insulating cement with coating technique, such as PI(polyimides), PA (nylon, polyamide), with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；
Step 4, laminating wafer laminating
Seeing Fig. 5, take a piece of laminating wafer, be coated with last layer adhesive glue on laminating wafer, the surface sound filtering chip wafer preparing insulating barrier with step 3 fits together, thus forms cavity above chip induction region；
Step 5, thinning
See Fig. 6, laminating wafer is ground, thinning；
Step 6, etching
See Fig. 7, at laminating crystal column surface resist coating, and be exposed, development, etching, need the surface sound filtering wafer the first metal layer planting ball to come out follow-up, form perforate；
Step 7, plant ball
See Fig. 8, carry out planting ball in the first metal layer position come out；
Step 8, cutting
Seeing Fig. 9, cutting is divided into single product.
In above-mentioned steps, described step 5 can be omitted；
Described insulating barrier can be B-stage glue, melted after colloid heating, now can need not be coated with adhesive glue on laminating wafer, directly fit；
Described laminating wafer is glass material or other insulant.
In addition to the implementation, present invention additionally comprises the technical scheme that other embodiments, all employing equivalents or equivalence substitute mode are formed, all should fall within the scope of the hereto appended claims.
Claims (6)
- null1. a wafer level surface sound filtering chip encapsulating structure，It is characterized in that: it includes surface sound filtering chip wafer (1)，Sound filtering chip wafer (1) surface, described surface includes electrode zone (1.1) and induction region (1.2)，Described electrode zone (1.1) surface configuration has the first metal layer (2)，Described surface sound filtering chip wafer (1) region in addition to electrode zone (1.1) and induction region (1.2) is provided with insulating barrier (3)，Described insulating barrier (3) is provided above wafer (4) of fitting，Cavity (7) is formed between described laminating wafer (4) and induction region (1.2)，Described laminating wafer (4) is provided with perforate (8) in electrode zone (1.1) position，Metal ball (6) it is provided with in described perforate (8)，Described metal ball (6) contacts with the first metal layer (2).
- A kind of wafer level surface the most according to claim 1 sound filtering chip encapsulating structure, it is characterised in that: described laminating wafer (4) is arranged on insulating barrier (3) by adhesive glue (5).
- 3. the manufacture method of a wafer level surface sound filtering chip encapsulating structure, it is characterised in that described method comprises the following steps that:Step one, take a piece of surface sound filtering chip wafer；Step 2, prepare the first metal layer at the electrode zone of surface sound filtering chip wafer；Step 3, prepare insulating barrierBeing coated with one layer of insulating cement on the sound filtering chip wafer of surface with coating technique, with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；Step 4, laminating waferTaking a piece of laminating wafer, be coated with last layer adhesive glue on laminating wafer, the surface sound filtering chip wafer preparing insulating barrier with step 3 fits together, thus forms cavity above chip induction region；Step 5, etchingAt laminating crystal column surface resist coating, and it is exposed, development, etching, needs the surface sound filtering wafer the first metal layer planting ball to come out follow-up, form perforate；Step 6, plant ballCarry out planting ball in the first metal layer position come out；Step 7, cuttingCutting is divided into single product.
- The manufacture method of a kind of wafer level surface the most according to claim 3 sound filtering chip encapsulating structure, it is characterised in that: between described step 4 and step 5 to laminating wafer be ground, thinning.
- The manufacture method of a kind of wafer level surface the most according to claim 3 sound filtering chip encapsulating structure, it is characterised in that: described insulating barrier uses B-stage glue, it may be unnecessary to is coated with adhesive glue on laminating wafer, directly fits.
- The manufacture method of a kind of wafer level surface the most according to claim 3 sound filtering chip encapsulating structure, it is characterised in that: described laminating wafer uses glass material, insulant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610204644.1A CN105897219A (en) | 2016-04-01 | 2016-04-01 | Wafer level surface acoustic filter chip packaging structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610204644.1A CN105897219A (en) | 2016-04-01 | 2016-04-01 | Wafer level surface acoustic filter chip packaging structure and manufacturing method thereof |
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| CN105897219A true CN105897219A (en) | 2016-08-24 |
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| CN201610204644.1A Pending CN105897219A (en) | 2016-04-01 | 2016-04-01 | Wafer level surface acoustic filter chip packaging structure and manufacturing method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106301283A (en) * | 2016-11-07 | 2017-01-04 | 无锡吉迈微电子有限公司 | The encapsulating structure of SAW filter and manufacture method |
| CN106505967A (en) * | 2016-11-07 | 2017-03-15 | 无锡吉迈微电子有限公司 | Encapsulating structure of SAW filter and preparation method thereof |
| CN109037428A (en) * | 2018-08-10 | 2018-12-18 | 付伟 | Chip-packaging structure and preparation method thereof with double cofferdam |
| CN113054938A (en) * | 2019-12-27 | 2021-06-29 | 中芯集成电路（宁波）有限公司 | Package structure and method for manufacturing the same |
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| US20040029356A1 (en) * | 2001-01-18 | 2004-02-12 | Hans-Jorg Timme | Filter device and method for fabricating filter devices |
| CN1565078A (en) * | 2002-07-31 | 2005-01-12 | 株式会社村田制作所 | Piezoelectric component and production method therefor |
| US20060290238A1 (en) * | 2005-06-22 | 2006-12-28 | Alps Electric Co., Ltd. | Electronic part having high sealing performance and method of manufacturing the same |
| JP2008047855A (en) * | 2006-07-19 | 2008-02-28 | Toray Ind Inc | Field-effect transistor |
| US7596849B1 (en) * | 2003-06-11 | 2009-10-06 | Triquint Semiconductor, Inc. | Method of assembling a wafer-level package filter |
| CN205609499U (en) * | 2016-04-01 | 2016-09-28 | 江苏长电科技股份有限公司 | Wafer level surface sound filtering chip package structure |
-
2016
- 2016-04-01 CN CN201610204644.1A patent/CN105897219A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040029356A1 (en) * | 2001-01-18 | 2004-02-12 | Hans-Jorg Timme | Filter device and method for fabricating filter devices |
| CN1565078A (en) * | 2002-07-31 | 2005-01-12 | 株式会社村田制作所 | Piezoelectric component and production method therefor |
| US7596849B1 (en) * | 2003-06-11 | 2009-10-06 | Triquint Semiconductor, Inc. | Method of assembling a wafer-level package filter |
| US20060290238A1 (en) * | 2005-06-22 | 2006-12-28 | Alps Electric Co., Ltd. | Electronic part having high sealing performance and method of manufacturing the same |
| JP2008047855A (en) * | 2006-07-19 | 2008-02-28 | Toray Ind Inc | Field-effect transistor |
| CN205609499U (en) * | 2016-04-01 | 2016-09-28 | 江苏长电科技股份有限公司 | Wafer level surface sound filtering chip package structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106301283A (en) * | 2016-11-07 | 2017-01-04 | 无锡吉迈微电子有限公司 | The encapsulating structure of SAW filter and manufacture method |
| CN106505967A (en) * | 2016-11-07 | 2017-03-15 | 无锡吉迈微电子有限公司 | Encapsulating structure of SAW filter and preparation method thereof |
| CN109037428A (en) * | 2018-08-10 | 2018-12-18 | 付伟 | Chip-packaging structure and preparation method thereof with double cofferdam |
| CN113054938A (en) * | 2019-12-27 | 2021-06-29 | 中芯集成电路（宁波）有限公司 | Package structure and method for manufacturing the same |
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Application publication date: 20160824 |
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