CN105897218A - Grooved buried hole type surface acoustic filter chip packaging structure and manufacturing method thereof - Google Patents
Grooved buried hole type surface acoustic filter chip packaging structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN105897218A CN105897218A CN201610202596.2A CN201610202596A CN105897218A CN 105897218 A CN105897218 A CN 105897218A CN 201610202596 A CN201610202596 A CN 201610202596A CN 105897218 A CN105897218 A CN 105897218A
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- wafer
- groove
- filtering chip
- laminating
- perforate
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
Abstract
The invention relates to a grooved buried hole type surface acoustic filter chip packaging structure and a manufacturing method thereof. The structure comprises a surface acoustic filter chip wafer (1), and the surface of the surface acoustic filter chip wafer (1) includes electrode areas (1.1) and an induction area (1.2). A laminated wafer (4) is arranged above the surface acoustic filter chip wafer (1). A cavity (7) is formed between the laminated wafer (4) and the induction area (1.2). The laminated wafer (4) is provided with holes (8) at the positions of the electrode areas (1.1), and the holes (8) are filled with conductive adhesive or electroplated metal (9). A second metal layer (10) is arranged on the surface of the conductive adhesive or electroplated metal (9), and metal balls (6) are arranged on the second metal layer (10). According to the grooved buried hole type surface acoustic filter chip packaging structure and the manufacturing method thereof of the invention, a surface acoustic filter of smaller area and size and lower manufacturing cost can be provided.
Description
Technical field
The present invention relates to a kind of groove buried via hole type surface sound filtering chip encapsulating structure and manufacture method thereof, belong to technical field of semiconductor encapsulation.
Background technology
Surface sound filter apparatus is widely used in RF and IF application, including pocket telephone, radiophone and various radio device.By using surface sound to filter, these electronic equipments are carried out the filtering of the signal of telecommunication, time delay etc. and processes.Because of surface acoustical filter properties of product and design function demand, need to ensure that filtering chip functional area can not contact any material, i.e. cavity structure design.
Existing surface acoustic filter part encapsulating structure is filtering chip to be passed through conductive projection flip chip bonding be connected with ceramic substrate and be embedded in completely in substrate cavity body, and substrate surface adds crown cap protection.But this kind of structural metal lid is relatively costly, and ceramic substrate compares high with the flatness requirement of crown cap, easily has the situation of close bad.Additionally the manufacture method of other surface acoustic filter parts is to use top sealing or coating process to be sealed module, forms cavity structure.
The method for packing of existing surface acoustic filter part, flow process is longer, relatively costly, and physical dimension is the biggest, under the trend trend that current electronic equipment does less and less, need constantly to reduce electronic installation and used in the weight of surface acoustic filter part and size.
Summary of the invention
The technical problem to be solved is to provide a kind of groove buried via hole type surface sound filtering chip encapsulating structure and manufacture method thereof for above-mentioned prior art, it is provided that the surface acoustic filter part of a kind of less area and volume, and has lower manufacturing cost.
The present invention solves the technical scheme that the problems referred to above are used: a kind of groove buried via hole type surface sound filtering chip encapsulating structure, it includes surface sound filtering chip wafer, described surface sound filtering chip crystal column surface includes electrode zone and induction region, described electrode area surfaces is provided with the first metal layer, sound filtering chip wafer region in addition to electrode zone and induction region in described surface is provided with adhesive glue, described adhesive glue is provided above wafer of fitting, cavity is formed between described laminating wafer and induction region, described laminating wafer is provided with the first perforate in electrode zone position, it is filled with conducting resinl or plated metal in described first perforate, the surface configuration of described conducting resinl or plated metal has the second metal level, it is provided with insulating barrier on described second metal level, the second perforate it is provided with on described insulating barrier.
It is provided with metal ball in described second perforate；
Described laminating wafer rear offers groove, and described groove is positioned at above induction region.
A kind of manufacture method of groove buried via hole type surface sound filtering chip encapsulating structure, described method comprises the following steps that:
Step one, take a piece of surface sound filtering chip wafer；
Step 2, prepare the first metal layer at the electrode zone of surface sound filtering chip wafer；
Step 3, laminating crystal round etching groove
Taking a piece of laminating wafer, the position needed at laminating wafer etches groove, and the position of groove is corresponding with the position of the electrode zone of surface sound filtering chip wafer and chip induction region；
Step 4, laminating wafer laminating
The laminating wafer that step 3 etches groove is fit together with surface sound filtering chip wafer by adhesive glue, thus forms cavity above chip induction region；
Step 5, etching perforate
In laminating wafer topcoating photoresist, exposure, development, etching, above electrode zone, form the first perforate；
Step 6, buried via hole
Imbed in the first perforate with conducting resinl or plated metal；
Step 7, prepares the second metal level
In step 6 the first perforate, the second metal level is prepared on the conducting resinl of embedment or the surface of plated metal；
Step 8, prepare insulating barrier
Being coated with one layer of insulating cement on the second metal level, with photoetching, follow-up ball position of planting is come out, forms the second perforate by the method for development；
Step 9, plant ball
The ball position of planting exposed in step 8 carries out planting ball；
Step 10, cutting
Cutting is divided into single product.
Between described step 4 and step 5 to laminating wafer be ground, thinning.
Described laminating wafer uses glass material.
Compared with prior art, it is an advantage of the current invention that:
1, compared with traditional technique, integral production flow process is wafer scale, can form undersized encapsulating structure, and technique is simple, can guarantee that the cavity structure of chip induction zone, can form the groove buried via hole type surface sound filtering chip encapsulating structure that reliability is higher；
2, the groove buried via hole type surface sound filtering chip encapsulating structure of the present invention can directly use, it is also possible to total and other encapsulating structures are formed on substrate secondary encapsulation, forms system in package.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the present invention a kind of groove buried via hole type surface sound filtering chip encapsulating structure.
Fig. 2 ~ Figure 12 is the process chart of the manufacture method of the present invention a kind of groove buried via hole type surface sound filtering chip encapsulating structure.
Wherein:
Surface sound filtering chip wafer 1
Electrode zone 1.1
Induction region 1.2
The first metal layer 2
Adhesive glue 3
Laminating wafer 4
Groove 5
Metal ball 6
Cavity 7
First perforate 8
Conducting resinl or plated metal 9
Second metal level 10
Insulating barrier 11
Second perforate 12.
Detailed description of the invention
Below in conjunction with accompanying drawing embodiment, the present invention is described in further detail.
nullAs shown in Figure 1，A kind of groove buried via hole type surface sound filtering chip encapsulating structure in the present embodiment，It includes surface sound filtering chip wafer 1，Sound filtering chip wafer 1 surface, described surface includes electrode zone 1.1 and induction region 1.2，Described electrode zone 1.1 surface configuration has the first metal layer 2，The sound filtering chip wafer 1 region in addition to electrode zone 1.1 and induction region 1.2 in described surface is provided with adhesive glue 3，Described adhesive glue 3 is provided above wafer 4 of fitting，Cavity 7 is formed between described laminating wafer 4 and induction region 1.2，Described laminating wafer 4 is provided with the first perforate 8 in electrode zone 1.1 position，It is filled with conducting resinl or plated metal 9 in described first perforate 8，The surface configuration of described conducting resinl or plated metal 9 has the second metal level 10，It is provided with insulating barrier 11 on described second metal level 10，The second perforate 12 it is provided with on described insulating barrier 11，It is provided with metal ball 6 in described second perforate.
Described metal ball 6 contacts with the second metal level 10.
Described laminating wafer 4 back side offers groove 5, and described groove 5 is positioned at above induction region 1.2.
Its manufacture method comprises the following steps that:
Step one, see Fig. 2, take a piece of surface sound filtering chip wafer；
Step 2, seeing Fig. 3, the electrode zone at surface sound filtering chip wafer prepares the first metal layer；
Surface sound filtering chip wafer, by cleaning, toasts, sputtering, resist coating, photoetching, development, and copper electroplating layer removes photoresist, and the method for etching prepares the first metal layer at electrode zone；
Step 3, laminating crystal round etching groove
Seeing Fig. 4, take a piece of laminating wafer, the position needed at laminating wafer etches groove, and the position of groove is corresponding with the position of the electrode zone of surface sound filtering chip wafer and chip induction region；
Step 4, laminating wafer laminating
Seeing Fig. 5, the laminating wafer that step 3 etches groove is fit together with surface sound filtering chip wafer by adhesive glue, thus forms cavity above chip induction region；
Step 5, thinning
See Fig. 6, laminating wafer is ground, thinning；
Step 6, etching perforate
See Fig. 7, in laminating wafer topcoating photoresist, exposure, development, etching, above electrode zone, form the first perforate；
Step 7, buried via hole
See Fig. 8, imbed in the first perforate with conducting resinl or plated metal；
Step 8, prepares the second metal level
See Fig. 9, by cleaning, baking, sputtering, resist coating, photoetching, development, copper electroplating layer, remove photoresist, the method for etching prepares the second metal level on the surface of conducting resinl or plated metal；
Step 9, prepare insulating barrier
Seeing Figure 10, be coated with one layer of insulating cement on the second metal level, with photoetching, follow-up ball position of planting is come out, forms the second perforate by the method for development；
Step 10, plant ball
Seeing Figure 11, the ball position of planting exposed in step 9 carries out planting ball；
Step 11, cutting
Seeing Figure 12, cutting is divided into single product.
Described laminating wafer is glass material or other insulant；
In above-mentioned steps, described step 5 also can be omitted.
In addition to the implementation, present invention additionally comprises the technical scheme that other embodiments, all employing equivalents or equivalence substitute mode are formed, all should fall within the scope of the hereto appended claims.
Claims (6)
- null1. a groove buried via hole type surface sound filtering chip encapsulating structure，It is characterized in that: it includes surface sound filtering chip wafer (1)，Sound filtering chip wafer (1) surface, described surface includes electrode zone (1.1) and induction region (1.2)，Described electrode zone (1.1) surface configuration has the first metal layer (2)，Described surface sound filtering chip wafer (1) region in addition to electrode zone (1.1) and induction region (1.2) is provided with adhesive glue (3)，Described adhesive glue (3) is provided above wafer (4) of fitting，Cavity (7) is formed between described laminating wafer (4) and induction region (1.2)，Described laminating wafer (4) is provided with the first perforate (8) in electrode zone (1.1) position，Conducting resinl or plated metal (9) it is filled with in described first perforate (8)，The surface configuration of described conducting resinl or plated metal (9) has the second metal level (10)，It is provided with insulating barrier (11) on described second metal level (10)，The second perforate (12) it is provided with on described insulating barrier (11)，Metal ball (6) it is provided with in described second perforate.
- A kind of groove buried via hole type surface the most according to claim 1 sound filtering chip encapsulating structure, it is characterised in that: described laminating wafer (4) back side offers groove (5), and described groove (5) is positioned at induction region (1.2) top.
- 3. the manufacture method of a groove buried via hole type surface sound filtering chip encapsulating structure, it is characterised in that described method comprises the following steps that:Step one, take a piece of surface sound filtering chip wafer；Step 2, prepare the first metal layer at the electrode zone of surface sound filtering chip wafer；Step 3, laminating crystal round etching grooveTaking a piece of laminating wafer, the position needed at laminating wafer etches groove, and the position of groove is corresponding with the position of the electrode zone of surface sound filtering chip wafer and chip induction region；Step 4, laminating wafer laminatingThe laminating wafer that step 3 etches groove is fit together with surface sound filtering chip wafer by adhesive glue, thus forms cavity above chip induction region；Step 5, etching perforateIn laminating wafer topcoating photoresist, exposure, development, etching, above electrode zone, form the first perforate；Step 6, buried via holeImbed in the first perforate with conducting resinl or plated metal；Step 7, prepares the second metal levelIn step 6 the first perforate, the second metal level is prepared on the conducting resinl of embedment or the surface of plated metal；Step 8, prepare insulating barrierBeing coated with one layer of insulating cement on the second metal level, with photoetching, follow-up ball position of planting is come out, forms the second perforate by the method for development；Step 9, plant ballThe ball position of planting exposed in step 8 carries out planting ball；Step 10, cuttingCutting is divided into single product.
- The manufacture method of a kind of groove buried via hole type surface the most according to claim 2 sound filtering chip encapsulating structure, it is characterised in that: between described step 4 and step 5 to laminating wafer be ground, thinning.
- The manufacture method of a kind of groove buried via hole type surface the most according to claim 2 sound filtering chip encapsulating structure, it is characterised in that: described laminating wafer uses glass material, insulant.
- The manufacture method of a kind of groove buried via hole type surface the most according to claim 2 sound filtering chip encapsulating structure, it is characterized in that: described step 3 is while going out groove by laminating crystal round etching, need the position planting ball to be etched perforate follow-up, step 5 can be omitted.
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| CN201610202596.2A CN105897218B (en) | 2016-04-01 | 2016-04-01 | Groove buried via hole type surface sound filtering chip encapsulating structure and its manufacturing method |
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| CN201610202596.2A CN105897218B (en) | 2016-04-01 | 2016-04-01 | Groove buried via hole type surface sound filtering chip encapsulating structure and its manufacturing method |
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| CN105897218A true CN105897218A (en) | 2016-08-24 |
| CN105897218B CN105897218B (en) | 2018-11-09 |
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Cited By (6)
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| CN106301283A (en) * | 2016-11-07 | 2017-01-04 | 无锡吉迈微电子有限公司 | The encapsulating structure of SAW filter and manufacture method |
| CN106888001A (en) * | 2017-03-08 | 2017-06-23 | 宜确半导体（苏州）有限公司 | Acoustic wave device and its wafer-level packaging method |
| CN107241077A (en) * | 2017-05-12 | 2017-10-10 | 电子科技大学 | A kind of piezoelectric film bulk acoustic wave resonator and preparation method thereof |
| CN107749748A (en) * | 2017-09-01 | 2018-03-02 | 江苏长电科技股份有限公司 | A kind of surface acoustic wave filtering chip encapsulating structure |
| US10151965B2 (en) | 2017-02-27 | 2018-12-11 | Autel Robotics Co., Ltd. | Motor, gimbal, and unmanned aerial vehicle |
| CN112117195A (en) * | 2019-12-16 | 2020-12-22 | 中芯集成电路（宁波）有限公司 | Packaging method |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106301283A (en) * | 2016-11-07 | 2017-01-04 | 无锡吉迈微电子有限公司 | The encapsulating structure of SAW filter and manufacture method |
| US10151965B2 (en) | 2017-02-27 | 2018-12-11 | Autel Robotics Co., Ltd. | Motor, gimbal, and unmanned aerial vehicle |
| CN106888001A (en) * | 2017-03-08 | 2017-06-23 | 宜确半导体（苏州）有限公司 | Acoustic wave device and its wafer-level packaging method |
| CN107241077A (en) * | 2017-05-12 | 2017-10-10 | 电子科技大学 | A kind of piezoelectric film bulk acoustic wave resonator and preparation method thereof |
| CN107241077B (en) * | 2017-05-12 | 2020-12-29 | 电子科技大学 | Piezoelectric film bulk acoustic resonator and preparation method thereof |
| CN107749748A (en) * | 2017-09-01 | 2018-03-02 | 江苏长电科技股份有限公司 | A kind of surface acoustic wave filtering chip encapsulating structure |
| CN112117195A (en) * | 2019-12-16 | 2020-12-22 | 中芯集成电路（宁波）有限公司 | Packaging method |
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| Publication number | Publication date |
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| CN105897218B (en) | 2018-11-09 |
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