CN107241077B - Piezoelectric film bulk acoustic resonator and preparation method thereof - Google Patents
Piezoelectric film bulk acoustic resonator and preparation method thereof Download PDFInfo
- Publication number
- CN107241077B CN107241077B CN201710333310.9A CN201710333310A CN107241077B CN 107241077 B CN107241077 B CN 107241077B CN 201710333310 A CN201710333310 A CN 201710333310A CN 107241077 B CN107241077 B CN 107241077B
- Authority
- CN
- China
- Prior art keywords
- layer
- bulk acoustic
- film bulk
- substrate
- piezoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000004642 Polyimide Substances 0.000 claims abstract description 13
- 229920001721 polyimide Polymers 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 23
- 239000010409 thin film Substances 0.000 claims description 14
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 12
- 238000001259 photo etching Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 229920000265 Polyparaphenylene Polymers 0.000 claims description 2
- 238000005266 casting Methods 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention belongs to the technical field of radio frequency Micro Electro Mechanical Systems (MEMS), and particularly provides a novel piezoelectric film bulk acoustic resonator and a manufacturing method thereof, wherein the novel piezoelectric film bulk acoustic resonator comprises a substrate, a supporting layer, a bottom electrode layer, a piezoelectric layer and a top electrode layer; the substrate of the resonator is provided with a certain number of grooves for increasing the external surface area of the substrate; arranging a supporting layer on the substrate, and filling the interior of the groove and the upper surface of the supporting layer with polyimide and the like which are low-acoustic-impedance flexible materials; and then sequentially arranging a bottom electrode layer, a piezoelectric layer and a top electrode layer on the low acoustic impedance layer. This novel piezoelectric film bulk acoustic resonator novel structure, preparation is simple, and more importantly can effectively solve flexible basement bulk acoustic resonator thermal stability not enough, and power capacity is not enough scheduling problem, has good application prospect.
Description
Technical Field
The invention belongs to the technical field of radio frequency Micro Electro Mechanical Systems (MEMS), and particularly relates to a novel piezoelectric film bulk acoustic resonator and a manufacturing method thereof.
Background
With the development of a wireless communication system towards miniaturization, high frequency and integration, the traditional dielectric filter and surface acoustic wave filter are difficult to meet the requirements of miniaturization and high frequency, and the filter formed by the film bulk acoustic wave resonator has the advantages of incomparable volume advantage of a ceramic dielectric filter, incomparable working frequency and power capacity of a surface acoustic wave resonator; in particular, the MEMS technology is becoming more and more mature, and the film bulk acoustic resonator is becoming the development trend of the wireless communication system today.
The main body part of the film bulk acoustic resonator is a sandwich structure formed by a bottom electrode, a piezoelectric film and a top electrode, electric energy is converted into mechanical energy by utilizing the inverse piezoelectric effect of a piezoelectric layer, and standing waves are formed in a device in the form of acoustic waves; since the speed of the acoustic wave is 5 orders of magnitude smaller than that of the electromagnetic wave, the size of the thin film bulk acoustic resonator is smaller than that of the conventional device. The most important part for bulk acoustic wave resonators is to confine the acoustic wave in the piezoelectric layer, and at present, conventional thin film bulk acoustic wave resonators are classified into two major categories according to the method of confining the acoustic wave:
first, a solid-state assembled type (SMR) has a structure as shown in fig. 3, and operates on the principle that a reflection layer is formed by alternately arranging high acoustic impedance layers and low acoustic impedance layers each having a quarter wavelength thickness, thereby reflecting acoustic waves; the solid assembled bulk acoustic wave resonator has good mechanical strength and power capacity, and can be applied to a high-power condition, but the Bragg reflecting layer of the SMR type resonator has extremely high requirements on the thickness and the roughness of each thin film, the stress control among the thin films also needs to be strictly controlled, otherwise, the thin films are easy to fall off, and the process is difficult to realize;
second, the cavity type film bulk acoustic resonator, the mode that realizes the cavity at present mainly has two kinds: an air cavity type (FBAR) having a structure as shown in fig. 4; a back etching type, the structure of which is shown in fig. 5; the working principle of the cavity type film bulk acoustic resonator is that the acoustic waves are reflected at the interface of the bottom electrode or the supporting layer and the air, so that the acoustic waves are limited on the piezoelectric layer to realize resonance; the resonator with the structure has the advantages of high reflection efficiency, high Q value, low insertion loss, integration and the like, but the preparation process of the cavity type film bulk acoustic resonator is complicated, and strict requirements are imposed on the control of film stress and the preparation process; because the manufacturing cost is high and the process threshold is high, the development of the whole domestic industry is limited.
In the analysis of the device performance by the substrate, the flexible substrate with acoustic impedance close to air is provided as the substrate, so that the device performance can be realized without using a traditional cavity structure or a Bragg reflection structure; the flexible structure can greatly reduce the complexity of the device preparation process, and can expand the device application to the fields of biochemical sensing and the like. However, compared with a rigid material, a flexible material has poor thermal conductivity, so that the flexible bulk acoustic wave resonator needs to be further improved and enhanced in thermal stability and power capacity compared with a conventional bulk acoustic wave resonator.
Disclosure of Invention
The piezoelectric film bulk acoustic resonator has a simple structure, and the preparation process is easy to realize, so that the production period is shortened, the production cost is reduced, the thermal stability and the power capacity of the flexible substrate bulk acoustic resonator are improved, and the piezoelectric film bulk acoustic resonator has a good application prospect.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a piezoelectric film bulk acoustic resonator structurally comprises a substrate, a supporting layer, a bottom electrode, a piezoelectric layer and a top electrode, wherein the bottom electrode, the piezoelectric layer and the top electrode are sequentially arranged on the substrate and the supporting layer; the bottom electrode, the piezoelectric layer and the top electrode are sequentially arranged on the low acoustic impedance layer.
Furthermore, the vertical grooves are distributed in an array, the shape of each vertical groove is the same, the overlooking shape of each vertical groove is a polygon, a rectangle or a circle, and the side-looking shape of each vertical groove is a dressing line shape or a sawtooth shape.
Furthermore, the low acoustic impedance piezoelectric layer is made of polyimide or cross-linked polyphenylene polymer.
Furthermore, the supporting layer is made of a high-heat-conductivity material, and the height of the supporting layer is 10-50 um.
Further, the substrate is a silicon substrate, and the piezoelectric layer is an aluminum nitride layer with a C-axis orientation.
Further, the bottom electrode and the top electrode are made of high-acoustic-impedance metal, such as tungsten or molybdenum.
The preparation method of the piezoelectric film bulk acoustic resonator comprises the following steps:
step 4, depositing a high acoustic impedance electrode layer on the upper surface of the low acoustic impedance layer by adopting magnetron sputtering or electron beam evaporation and photoetching a bottom electrode pattern;
and 6, depositing a top electrode on the upper surface of the piezoelectric layer by adopting magnetron sputtering or electron beam evaporation, and etching a top electrode pattern to prepare the film bulk acoustic resonator.
It should be noted that a certain number of vertical grooves are formed in the upper surface of the substrate in the present invention, so as to increase the contact area between the flexible low acoustic impedance material and the silicon substrate, and meanwhile, the base with the grooves can effectively suppress the parasitic modulus caused by the acoustic wave reflected wave, thereby preventing the reflected wave from interfering the fundamental frequency signal. The specific shape can be determined according to the actual size and the manufacturing process level of the resonator, and the flexible low-acoustic-impedance material is ensured to be fully and uniformly filled on the surface of the substrate. The height of the supporting layer is to enable the flexible low-acoustic-impedance layer to have a certain thickness so as to achieve the purpose of reducing the return loss of the bulk acoustic wave resonator and improve the performance of the device.
Compared with the prior art and the structure, the invention has the following advantages:
1. compared with the traditional cavity type and solid assembled film bulk acoustic resonators, the film bulk acoustic resonator has the advantages that a cavity structure is not required to be formed, the mechanical strength is improved, and the process difficulty is reduced. A sacrificial layer in the cavity structure is not needed, so that the subsequent complex process step of releasing the sacrificial layer is reduced; the Bragg reflection layer in the solid assembled film bulk acoustic resonator can be effectively replaced by the flexible material with low acoustic impedance, the defect that the Bragg reflection layer is difficult to determine is overcome, the leakage of acoustic waves below the bottom electrode can be well limited, and the performance of the film bulk acoustic resonator is ensured. The substrate surface with the groove can also effectively inhibit a parasitic modulus brought by a sound wave reflected wave leaked to the low sound impedance layer, so that interference of the reflected wave to a main frequency signal is avoided.
2. The device provided by the invention innovatively solves the problems of insufficient thermal stability and insufficient power capacity of the flexible matrix acoustic wave resonator. When the resonator works, due to the self-heating phenomenon, the flexible low-impedance material is difficult to radiate heat due to low self thermal conductivity, so that the temperature coefficient of the device is too high, and the power capacity of the device is limited, so that the flexible substrate acoustic wave resonator cannot meet part of market requirements. The silicon substrate with high thermal conductivity is in large-area contact with the flexible substrate, so that heat can be more effectively dissipated, and the thermal steady-state temperature of the device is reduced; the performance of the device is improved, and the application field of the flexible matrix acoustic wave resonator is widened due to high power capacity.
3. The invention can greatly simplify the manufacturing process of the film bulk acoustic resonator, reduce the process threshold, shorten the manufacturing period and reduce the production cost.
Drawings
FIG. 1 is a schematic structural diagram of a film bulk acoustic resonator according to the present invention.
Fig. 2 is a schematic diagram of the similar structure of the film bulk acoustic resonator of the present invention.
Fig. 3 is a schematic structural view of a solid state mounted type thin film bulk acoustic resonator (SMR).
Fig. 4 is a schematic structural view of an air cavity type Film Bulk Acoustic Resonator (FBAR).
Fig. 5 is a schematic structural diagram of a back-etched film bulk acoustic resonator.
Fig. 6 is a cross-sectional view of the etched substrate of this embodiment 1.
Fig. 7 is a cross-sectional view of the present example 1 after the support layer is deposited.
Fig. 8 is a cross-sectional view of the device of example 1 after patterning the support layer.
FIG. 9 is a cross-sectional view of the device of example 1 filled with polyimide.
FIG. 10 is a cross-sectional view of the device after preparation of the bottom electrode layer of example 1.
Fig. 11 is a cross-sectional view of a device after the piezoelectric layer is prepared in example 1.
FIG. 12 is a cross-sectional view of the device after preparation of the top electrode layer of example 1.
Fig. 13 is a top view of a piezoelectric thin film bulk acoustic resonator prepared in example 1.
In the figure, 1 is a substrate, 2 is a support layer, 3 is a low acoustic impedance polyimide layer, 4 is a bottom electrode layer, 5 is a piezoelectric layer, and 6 is a top electrode layer.
Detailed Description
The invention is described in further detail below with reference to the figures and examples.
Example 1
The present embodiment provides a piezoelectric film bulk acoustic resonator, whose structure is shown in fig. 1, and includes a substrate 1 with a vertical groove, a patterned support layer 2, a low acoustic impedance layer 3 completely filling and covering the surface of the substrate, a bottom electrode layer 4, a piezoelectric layer 5, and a top electrode layer 6; in this embodiment, the substrate material uses silicon, and the degree of depth of vertical groove in the substrate is about 10um, vertical groove adopt square hole, vertical groove to be array arrangement, the side view shape is the dressing line shape, the low sound impedance layer is polyimide, and bottom electrode uses molybdenum, and the piezoelectric layer is the aluminium nitride that has the C-axis orientation, and the top electrode of the superiors is metal molybdenum.
The specific preparation process of the piezoelectric film bulk acoustic resonator comprises the following steps:
step 4, depositing a layer of 100-200nm molybdenum on the polyimide low-acoustic-impedance layer by a magnetron sputtering method, and patterning a corresponding bottom electrode shape by photoetching to serve as a bottom electrode layer, as shown in fig. 10; the process conditions of magnetron sputtering in this example are: the gas pressure is 1Pa, the power is 200W, the gas flow is 20sccm, and the substrate temperature is water cooling;
Step 6, depositing a layer of 100-200nm metal molybdenum by a magnetron sputtering method, and obtaining a top electrode layer by photoetching and patterning, as shown in fig. 12, wherein the process conditions in the example are the same as those in the step 4; a top view of the prepared piezoelectric thin film bulk acoustic resonator structure is shown in fig. 13.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.
Claims (7)
1. A piezoelectric film bulk acoustic resonator structurally comprises a substrate, a supporting layer, a bottom electrode, a piezoelectric layer and a top electrode, wherein the bottom electrode, the piezoelectric layer and the top electrode are sequentially arranged on the substrate and the supporting layer; the bottom electrode, the piezoelectric layer and the top electrode are sequentially arranged on the low acoustic impedance layer.
2. The piezoelectric thin film bulk acoustic resonator according to claim 1, wherein the plurality of vertical grooves are arranged in an array, each of the vertical grooves has the same shape, and has a polygonal, rectangular or circular shape in a plan view and a comb-like or saw-like shape in a side view.
3. The piezoelectric thin film bulk acoustic resonator according to claim 1, wherein the material of the low acoustic impedance layer is polyimide or a cross-linked polyphenylene polymer.
4. The piezoelectric thin film bulk acoustic resonator according to claim 1, wherein the material of the supporting layer is a high thermal conductivity material, and the height of the supporting layer is 10 to 50 μm.
5. The piezoelectric thin film bulk acoustic resonator of claim 1, wherein said substrate is a silicon substrate and said piezoelectric layer is a layer of aluminum nitride having a C-axis orientation.
6. The piezoelectric thin film bulk acoustic resonator of claim 1, wherein the bottom and top electrode materials are high acoustic impedance metals.
7. The method of manufacturing a piezoelectric thin film bulk acoustic resonator according to claim 1, comprising the steps of:
step 1, etching a preset position on a substrate by adopting a dry etching or wet etching process to form a plurality of vertical grooves;
step 2, depositing a layer of supporting layer material on the substrate subjected to the step 1 by utilizing a magnetron sputtering or chemical vapor deposition method, and obtaining a patterned supporting layer through photoetching;
step 3, uniformly coating a layer of low-acoustic-impedance material on the substrate and the supporting layer obtained in the step 2 by adopting a spin coating and casting process, and then carrying out high-temperature curing to obtain a low-acoustic-impedance layer;
step 4, depositing a high acoustic impedance electrode layer on the upper surface of the low acoustic impedance layer by adopting magnetron sputtering or electron beam evaporation and photoetching a bottom electrode pattern;
step 5, growing a piezoelectric layer on the bottom electrode through magnetron sputtering and photoetching a piezoelectric layer pattern;
and 6, depositing a top electrode on the upper surface of the piezoelectric layer by adopting magnetron sputtering or electron beam evaporation, and etching a top electrode pattern to prepare the film bulk acoustic resonator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710333310.9A CN107241077B (en) | 2017-05-12 | 2017-05-12 | Piezoelectric film bulk acoustic resonator and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710333310.9A CN107241077B (en) | 2017-05-12 | 2017-05-12 | Piezoelectric film bulk acoustic resonator and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107241077A CN107241077A (en) | 2017-10-10 |
| CN107241077B true CN107241077B (en) | 2020-12-29 |
Family
ID=59985469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710333310.9A Expired - Fee Related CN107241077B (en) | 2017-05-12 | 2017-05-12 | Piezoelectric film bulk acoustic resonator and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107241077B (en) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108092639B (en) * | 2017-12-21 | 2020-12-22 | 华南理工大学 | Micro-nano column flexible array film bulk acoustic resonator filter and preparation thereof |
| CN110149100B (en) * | 2018-02-12 | 2023-10-13 | 诺思(天津)微系统有限责任公司 | Flexible electronic device and preparation method thereof |
| CN108494380A (en) * | 2018-03-16 | 2018-09-04 | 无锡市好达电子有限公司 | SAW filter materials and preparation method thereof |
| CN110445474B (en) * | 2018-05-04 | 2024-08-16 | 苏州汉天下电子有限公司 | Film bulk acoustic resonator, method of manufacturing the same, and film bulk acoustic filter |
| KR102107024B1 (en) | 2018-11-22 | 2020-05-07 | 삼성전기주식회사 | Acoustic resonator |
| CN109660227B (en) * | 2018-12-24 | 2023-08-18 | 江西省纳米技术研究院 | Film bulk acoustic wave filter and packaging method thereof |
| CN109889173B (en) * | 2018-12-26 | 2022-07-12 | 天津大学 | Connection structure of flexible substrate film bulk acoustic wave filter |
| CN109889181B (en) * | 2019-03-26 | 2020-09-29 | 电子科技大学 | Composite flexible body acoustic wave resonator and preparation method thereof |
| CN111786652B (en) * | 2019-04-04 | 2022-05-10 | 中芯集成电路（宁波）有限公司上海分公司 | Bulk acoustic wave resonator, method of manufacturing the same, filter, and radio frequency communication system |
| CN110113022B (en) * | 2019-05-13 | 2023-09-26 | 南方科技大学 | Film bulk acoustic resonator and manufacturing method thereof |
| CN110149574B (en) * | 2019-05-18 | 2024-09-03 | 安徽奥飞声学科技有限公司 | MEMS structure |
| CN110572135B (en) * | 2019-09-17 | 2021-12-14 | 中国科学院上海微系统与信息技术研究所 | High-frequency acoustic wave resonator and preparation method thereof |
| CN110601674B (en) * | 2019-09-27 | 2022-04-01 | 中国科学院上海微系统与信息技术研究所 | High-frequency acoustic wave resonator and preparation method thereof |
| CN112688661B (en) * | 2019-10-17 | 2023-05-30 | 芯恩（青岛）集成电路有限公司 | Body type acoustic wave resonant cavity, manufacturing process and communication device |
| CN110880924A (en) * | 2019-12-11 | 2020-03-13 | 武汉大学 | Tunable film bulk acoustic resonator |
| CN111490746A (en) * | 2019-12-31 | 2020-08-04 | 瑞声科技(新加坡)有限公司 | Film bulk acoustic resonator |
| CN111575661B (en) * | 2020-04-07 | 2022-08-05 | 上海大学 | Method for improving return loss and Q value of SMR device |
| CN111756346B (en) * | 2020-05-19 | 2021-08-24 | 见闻录(浙江)半导体有限公司 | Connecting structure of solid assembled resonator and manufacturing process |
| CN112398456A (en) * | 2020-11-20 | 2021-02-23 | 天通瑞宏科技有限公司 | High-performance surface acoustic wave device and preparation method thereof |
| CN112641460A (en) * | 2020-12-15 | 2021-04-13 | 浙江大学 | Physiological sound detection device and method based on micro-electromechanical piezoelectric acoustic sensor |
| CN112886939A (en) * | 2020-12-25 | 2021-06-01 | 杭州左蓝微电子技术有限公司 | Film bulk acoustic resonator, preparation method thereof and filter |
| CN113452340B (en) * | 2021-06-25 | 2023-08-15 | 西安电子科技大学 | Bulk acoustic wave resonator and method for improving energy-gathering structure thereof |
| CN115733461A (en) * | 2022-11-22 | 2023-03-03 | 广州市艾佛光通科技有限公司 | Bulk acoustic wave resonator and preparation method thereof |
| CN118232869B (en) * | 2024-04-15 | 2024-10-18 | 武汉敏声新技术有限公司 | Bulk acoustic wave resonator |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1938945A (en) * | 2004-03-31 | 2007-03-28 | 英特尔公司 | Electro-mechanical device and method of producing the same |
| CN1953434A (en) * | 2005-10-18 | 2007-04-25 | 安华高科技无线Ip（新加坡）私人有限公司 | Acoustic galvanic isolator |
| CN101217266A (en) * | 2008-01-09 | 2008-07-09 | 电子科技大学 | Novel bulk acoustic wave resonator and preparation method thereof |
| CN104821798A (en) * | 2013-12-17 | 2015-08-05 | 安华高科技通用Ip(新加坡)公司 | Electronic packaging and MEMS packaging |
| CN105097714A (en) * | 2015-06-15 | 2015-11-25 | 贵州中科汉天下电子有限公司 | Packaging structure for FBAR device and manufacturing method thereof |
| CN105262455A (en) * | 2015-10-09 | 2016-01-20 | 锐迪科微电子（上海）有限公司 | High-reliability FBAR (thin-film bulk acoustic resonator) and manufacturing method thereof |
| CN105897218A (en) * | 2016-04-01 | 2016-08-24 | 江苏长电科技股份有限公司 | Grooved buried hole type surface acoustic filter chip packaging structure and manufacturing method thereof |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7791434B2 (en) * | 2004-12-22 | 2010-09-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric |
| CN101246162A (en) * | 2008-03-12 | 2008-08-20 | 浙江大学 | Immune body detecting biochip using piezo-electricity thin film acoustic wave device |
| JP2012060418A (en) * | 2010-09-09 | 2012-03-22 | Seiko Epson Corp | Surface acoustic wave device, electronic apparatus and sensor device |
| US9048812B2 (en) * | 2011-02-28 | 2015-06-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer |
| WO2012137574A1 (en) * | 2011-04-01 | 2012-10-11 | ルネサスエレクトロニクス株式会社 | Semiconductor device, method for manufacturing same, and portable telephone |
| JP6341362B2 (en) * | 2013-12-24 | 2018-06-13 | セイコーエプソン株式会社 | Heating element, vibration device, electronic device and moving object |
| US9621126B2 (en) * | 2014-10-22 | 2017-04-11 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator device including temperature compensation structure comprising low acoustic impedance layer |
| CN204481097U (en) * | 2015-01-29 | 2015-07-15 | 河南易炫电子科技有限公司 | A kind of Coupled resonator filter with bridger for radio communication |
| US20160329481A1 (en) * | 2015-05-04 | 2016-11-10 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic wave resonator and filter including the same |
| CN105958956B (en) * | 2016-04-26 | 2019-05-14 | 电子科技大学 | A kind of thin film bulk acoustic wave resonator and preparation method thereof |
-
2017
- 2017-05-12 CN CN201710333310.9A patent/CN107241077B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1938945A (en) * | 2004-03-31 | 2007-03-28 | 英特尔公司 | Electro-mechanical device and method of producing the same |
| CN1953434A (en) * | 2005-10-18 | 2007-04-25 | 安华高科技无线Ip（新加坡）私人有限公司 | Acoustic galvanic isolator |
| CN101217266A (en) * | 2008-01-09 | 2008-07-09 | 电子科技大学 | Novel bulk acoustic wave resonator and preparation method thereof |
| CN104821798A (en) * | 2013-12-17 | 2015-08-05 | 安华高科技通用Ip(新加坡)公司 | Electronic packaging and MEMS packaging |
| CN105097714A (en) * | 2015-06-15 | 2015-11-25 | 贵州中科汉天下电子有限公司 | Packaging structure for FBAR device and manufacturing method thereof |
| CN105262455A (en) * | 2015-10-09 | 2016-01-20 | 锐迪科微电子（上海）有限公司 | High-reliability FBAR (thin-film bulk acoustic resonator) and manufacturing method thereof |
| CN105897218A (en) * | 2016-04-01 | 2016-08-24 | 江苏长电科技股份有限公司 | Grooved buried hole type surface acoustic filter chip packaging structure and manufacturing method thereof |
Non-Patent Citations (2)
| Title |
|---|
| A low-noise FBAR-CMOS frequency/phase discriminator for phase noise measurement and cancellation;Alireza Imani;《2013 IEEE Radio Frequency Integrated Circuits Symposium(RFIC)》;20130730;431-434 * |
| FBAR器件模型和若干应用技术的研究;张慧金;《中国优秀硕士学位论文全文数据库信息科技辑》;20110715;第2-3章 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107241077A (en) | 2017-10-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107241077B (en) | Piezoelectric film bulk acoustic resonator and preparation method thereof | |
| CN105958956B (en) | A kind of thin film bulk acoustic wave resonator and preparation method thereof | |
| CN103929149B (en) | Flexible piezoelectric film bulk acoustic wave resonator and manufacturing method thereof | |
| CN111294010B (en) | Cavity structure of film bulk acoustic resonator and manufacturing process | |
| CN107528561A (en) | A kind of cavity type FBAR and preparation method thereof | |
| CN112290901B (en) | Cavity type film bulk acoustic resonator packaging structure and preparation method thereof | |
| CN106209001B (en) | The thin film bulk acoustic wave resonator and preparation method thereof of based single crystal lithium niobate thin slice | |
| CN111010127B (en) | Film bulk acoustic resonator and preparation method thereof | |
| US20110103621A1 (en) | Thermo-acoustic loudspeaker | |
| CN111200414B (en) | Bottom electrode structure of bulk acoustic wave resonator and process method | |
| CN113381724B (en) | Bulk acoustic wave resonator and method for manufacturing the same | |
| CN110113022B (en) | Film bulk acoustic resonator and manufacturing method thereof | |
| CN112311347A (en) | Structure capable of improving quality factor Q value of film bulk acoustic resonator | |
| CN110690871A (en) | Film bulk acoustic resonator with heat insulation structure and preparation method thereof | |
| KR20050109870A (en) | Air gap type fbar and fabricating method thereof | |
| CN111342803A (en) | Film bulk acoustic resonator | |
| CN218450068U (en) | Bulk acoustic wave resonator and communication device | |
| CN113193847B (en) | Structure for improving quality factor and optimizing stress distribution of film bulk acoustic resonator | |
| CN107947633A (en) | Piezoelectricity electromagnetism combined vibrating energy harvester and preparation method thereof | |
| CN113364422A (en) | Film bulk acoustic resonator with ring electrode | |
| KR20040084478A (en) | High frequency film bulk acoustic wave resonator and method for manufacturing the same | |
| CN115498974A (en) | Thin film bulk acoustic wave device with cavity structure obtained by stress control and preparation method thereof | |
| CN111669144B (en) | BAW bulk acoustic wave resonator, preparation method thereof and filter | |
| CN114744977A (en) | High-power bulk acoustic wave resonator and manufacturing method thereof | |
| CN211959173U (en) | Film bulk acoustic resonator and filter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20201229 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |