CN113595522A - Method for manufacturing aluminum nitride lamb wave resonator - Google Patents
Method for manufacturing aluminum nitride lamb wave resonator Download PDFInfo
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- CN113595522A CN113595522A CN202110788440.8A CN202110788440A CN113595522A CN 113595522 A CN113595522 A CN 113595522A CN 202110788440 A CN202110788440 A CN 202110788440A CN 113595522 A CN113595522 A CN 113595522A
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- 238000000034 method Methods 0.000 title claims abstract description 101
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 89
- 235000019687 Lamb Nutrition 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 36
- 239000010703 silicon Substances 0.000 claims abstract description 36
- 238000000151 deposition Methods 0.000 claims abstract description 34
- 238000002161 passivation Methods 0.000 claims abstract description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 18
- 229920005591 polysilicon Polymers 0.000 claims abstract description 15
- 239000000126 substance Substances 0.000 claims abstract description 9
- 238000005498 polishing Methods 0.000 claims abstract description 7
- 238000001020 plasma etching Methods 0.000 claims description 39
- 239000007772 electrode material Substances 0.000 claims description 34
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 19
- 238000000059 patterning Methods 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 5
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 5
- 230000005527 interface trap Effects 0.000 abstract description 3
- 238000003949 trap density measurement Methods 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 238000007517 polishing process Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 138
- 238000013461 design Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 239000010408 film Substances 0.000 description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 7
- 238000004088 simulation Methods 0.000 description 7
- 239000012808 vapor phase Substances 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000979 retarding effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- Engineering & Computer Science (AREA)
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The application provides a method for manufacturing an aluminum nitride lamb wave resonator, which comprises the following steps: and S1 etching to generate a release cavity, and then thermally oxidizing to grow a passivation layer, S2 depositing a polysilicon sacrificial layer until the release cavity is filled, S3 etching to remove the sacrificial layer on the periphery of the release cavity, then carrying out chemical mechanical polishing process to enable the upper surface of the silicon chip, and manufacturing the resonator on the planarized upper surface. The applicant forms a common step covering layer with good step covering by an oxide layer with the lowest interface trap density and the highest quality factor through hot oxygen; depositing a polysilicon sacrificial layer by a polysilicon reverse etching method, etching to remove polysilicon outside the release cavity, and then polishing and flattening the upper surface of the silicon wafer by chemical machinery; so as to better damage-free rapid planarization, unexpectedly obtain good planarization effect, and obviously improve growth quality and step coverage. And an aluminum nitride lamb wave resonator based thereon which provides a high quality factor.
Description
Technical Field
The invention relates to the technical field of micro-electro-mechanical system resonators, in particular to a method for manufacturing an on-chip multi-band integrated lamb wave resonator and an aluminum nitride lamb wave resonator based on the same.
Background
The widespread use of micro-electromechanical system (MEMS) resonators in radio frequency wireless communications has attracted considerable attention. Surface acoustic wave resonators (SAW) and Film Bulk Acoustic Resonators (FBAR) have dominated the market for radio frequency front-end components. The surface acoustic wave resonator can realize multi-frequency integration on a chip, but it is difficult to realize a high quality factor (Q). The film bulk acoustic resonator has the advantages of high frequency and high quality factor, but the multi-band integration is difficult to realize on a single chip.
The aluminum nitride lamb wave resonator has the advantages of a surface acoustic wave resonator and a film bulk acoustic wave resonator, is small in size and low in power consumption, and can be well compatible with a CMOS (complementary metal oxide semiconductor) process. However, the aluminum nitride lamb wave resonator manufactured by the conventional manufacturing process has low yield, and has the technical problems of high yield and high device performance which are difficult to overcome in the process.
Disclosure of Invention
The application provides a method for manufacturing an aluminum nitride lamb wave resonator, which aims to solve one or more problems in the prior art.
The application provides a method for manufacturing an aluminum nitride lamb wave resonator, which comprises the following steps:
s1, etching the upper surface of the silicon chip to generate a release cavity with a concave middle part, and growing a silicon dioxide film on the upper surface of the silicon chip with the release cavity by adopting a thermal oxidation method to serve as a passivation layer;
s2, depositing a sacrificial layer made of polysilicon on the upper surface of the silicon wafer by using a Low Pressure Chemical Vapor Deposition (LPCVD) method until a release cavity with a passivation layer is filled,
s3, removing the sacrificial layer on the periphery of the release cavity by a re-etching method until the passivation layer is exposed, and flattening the upper surface of the silicon wafer by a Chemical Mechanical Polishing (CMP) method; and a step of fabricating a resonator on the planarized upper surface.
The inventor is through a large amount of experimental studies, think that aluminium nitride lamb wave syntonizer's yields is not high, an important reason is when realizing the release suspension of syntonizer, when using gas phase corrosion syntonizer bottom monocrystalline silicon substrate, whether isotropic etching can lead to syntonizer periphery monocrystalline silicon to appear corroding on a large scale, lead to acoustic energy to reveal to the ineffective area, influence the quality factor (Q) of syntonizer, and probably lead to the syntonizer of syntonizer to drop, current technology is difficult to avoid releasing cavity body cave in or the phenomenon of throwing excessively.
In order to avoid lateral undercutting (undercut) of the release cavity caused by the release process, it has been proposed to deposit a layer of silicon dioxide on the silicon wafer as a release protective layer by Low Pressure Chemical Vapor Deposition (LPCVD), and refill polysilicon as a sacrificial layer, but since the density and quality of the silicon dioxide deposited by the (LPCVD) process are both limited, the requirement of preventing the lateral undercutting is difficult to achieve for the lamb wave resonator.
Through a large amount of experimental researches, the inventor also finds that molybdenum (Mo) metal is an ideal choice for the aluminum nitride lamb wave resonator as the bottom electrode material, but another important reason that the yield of the aluminum nitride lamb wave resonator is not high is that the molybdenum (Mo) metal bottom electrode grown in the prior art has a poor structure, and the appearance of the upper surface of the sacrificial layer has an important influence on the film forming quality of a thin film grown on the upper surface of the sacrificial layer before the device is released; the appearance of the upper surface of the sacrificial layer is an important reason for the defects of poor coverage, poor growth quality, large stress at the step and the like of the aluminum nitride thin film.
In view of the above, the applicant creatively provides the lowest interface trap density and the highest quality oxide layer by the thermal oxidation method, avoids the lateral under etching, forms the common step covering layer with good step covering, and the process is also beneficial to the mass production.
In view of the above, the inventor provides a polysilicon reverse etching method, which firstly deposits a sacrificial layer made of polysilicon on the upper surface of a silicon wafer by a Low Pressure Chemical Vapor Deposition (LPCVD) method, thereby reducing unnecessary vapor phase reaction and improving the quality of the thin film growth of the sacrificial layer; then removing the sacrificial layer on the periphery of the release cavity by etching until the passivation layer is exposed, removing the polycrystalline silicon outside the release cavity, and then flattening the upper surface of the silicon wafer by Chemical Mechanical Polishing (CMP); so as to better damage the rapid CMP and the surface planarization, unexpectedly obtain good planarization effect, and obviously improve the growth quality and the step coverage.
In some embodiments, etching to form the release cavities in S1 uses Reactive Ion Etching (RIE);
in some embodiments, the etching to remove the sacrificial layer at the periphery of the release cavity to expose the passivation layer in S3 is performed by Reactive Ion Etching (RIE);
in some embodiments, the difference in height planarized in S3 to the release cavity boundary should be less than 45 nm;
in some embodiments, the step of fabricating the resonator comprises:
s4, depositing an aluminum nitride seed layer on the planarized upper surface, depositing a bottom electrode material layer, and patterning to form a bottom electrode;
s5, depositing an aluminum nitride piezoelectric layer on the upper surface of the silicon wafer with the bottom electrode, growing a top electrode material layer on the upper surface of the aluminum nitride piezoelectric layer, and then patterning and stripping to form the top electrode;
s7, patterning the aluminum nitride piezoelectric layer, etching to form a plurality of release grooves penetrating through the aluminum nitride piezoelectric layer and the aluminum nitride seed layer to the sacrificial layer, wherein a pattern defined by the plurality of release grooves is a prefabricated resonator area;
s8, removing the sacrificial layer in the release cavity through vapor phase corrosion of the release groove to form an air reflection cavity, and releasing the resonant oscillator to realize the preparation of the device.
In some embodiments, the present application includes the steps of: the step of manufacturing the resonator vibrator further comprises S6 after S5, and etching the aluminum nitride piezoelectric layer to the bottom electrode to form a bottom electrode opening; and respectively depositing electrode pad material layers by opening holes of the top electrode and the bottom electrode, and respectively stripping to form a top electrode surface pad and a bottom electrode surface pad.
In some embodiments, the bottom electrode material layer is patterned in S4, leaving a bottom electrode circuit area), a bottom electrode electrical interconnect area, and a first lateral support physically and electrically connecting the bottom electrode circuit area and the bottom electrode electrical interconnect area; the projection of the bottom electrode circuit area on the surface of the release cavity is positioned in the release cavity, and the projection of the bottom electrode electrical interconnection area on the surface of the release cavity is positioned outside the release cavity.
In some embodiments, the step of depositing the bottom electrode material layer in the step S4 adopts a magnetron sputtering method; the method of Reactive Ion Etching (RIE) is adopted for forming the bottom electrode in the patterning mode.
In some embodiments, a top electrode material layer is grown and patterned on the upper surface of the aluminum nitride piezoelectric layer in S5, and a top electrode circuit area of the top electrode, a top electrode electrical interconnection area, and a second lateral support portion physically and electrically connecting the top electrode circuit area and the top electrode electrical interconnection area are reserved; the projection of the top electrode circuit area on the surface of the release cavity is positioned in the release cavity, and the projection of the top electrode electrical interconnection area on the surface of the release cavity is positioned outside the release cavity.
In some embodiments, in S5, depositing an aluminum nitride piezoelectric layer on the upper surface of the silicon wafer with the bottom electrode is performed by a magnetron sputtering method;
in some embodiments, in S5, before growing the top electrode material layer on the upper surface of the aluminum nitride piezoelectric layer, an adhesion layer is deposited on the upper surface of the aluminum nitride piezoelectric layer by using an ion beam sputtering method;
in some embodiments, the adhesion layer material is titanium.
In some embodiments, etching the aluminum nitride piezoelectric layer of the bottom electrode electrical interconnection area in S6 until the surface of the bottom electrode electrical interconnection area is exposed, forming a bottom electrode opening; the deposited electrode pad material of the top electrode electrical interconnection area is stripped to form a top electrode surface pad, the bottom electrode is perforated and the deposited electrode pad material is stripped to be higher than the upper surface of the aluminum nitride piezoelectric layer to form a bottom electrode surface pad after the bottom electrode is filled with the bottom electrode perforated and deposited electrode pad material;
the aluminum nitride piezoelectric layer is patterned in S7, leaving areas of the first and second lateral support portions. The projection of a figure formed by a plurality of etched release grooves on the surface of the release cavity is positioned in the release cavity, and the projection of the top electrode circuit area on the surface of the release cavity and the projection of the bottom electrode circuit area on the surface of the release cavity are positioned outside.
In some embodiments, the S6 bottom electrode opening is performed using Reactive Ion Etching (RIE);
in some embodiments, etching to form the plurality of relief grooves in S7 uses Reactive Ion Etching (RIE).
In some embodiments, the S8 etch is xenon difluoride (XeF) using a vapor phase chemical etching medium2) A gas.
Based on the method, the aluminum nitride lamb wave resonator prepared based on the method is further provided.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a flow chart of one embodiment of a method provided herein;
FIG. 2 is a schematic diagram of one embodiment of the method provided herein after S1 (etching to create a release chamber followed by a thermal oxygen-generated passivation layer);
FIG. 3 is a schematic diagram illustrating the structure of an embodiment of the method according to the present application after depositing a sacrificial layer of polysilicon into the release chamber S2;
FIG. 4 is a schematic structural diagram of one embodiment of the method according to the present application after S3 (etching to remove the sacrificial layer at the periphery of the release cavity and then using a CMP process to planarize the upper surface of the silicon wafer);
fig. 5 is a schematic structural diagram of an embodiment of the method of the present application after S4 (depositing an aluminum nitride seed layer and a bottom electrode material layer on the planarized upper surface, and then patterning the bottom electrode material layer to form a bottom electrode);
fig. 6 is a schematic structural diagram of an embodiment of the method provided in the present application after S5 (depositing an aluminum nitride piezoelectric layer and a top electrode material layer, and then patterning the top electrode material layer to form a top electrode);
fig. 7 is a schematic structural diagram illustrating a bottom electrode opening formed by etching an aluminum nitride piezoelectric layer to the bottom electrode in S6 according to an embodiment of the method provided in the present application;
FIG. 8 is a schematic diagram illustrating a top electrode and a bottom electrode opening deposited with electrode pad material layers respectively stripped to form a top electrode surface pad and a bottom electrode surface pad in S6 according to an embodiment of the method provided in the present application;
fig. 9 is a schematic structural diagram illustrating a structure of a release device in a release chamber released by etching an aluminum nitride piezoelectric layer at S7 to form a plurality of release grooves penetrating through the aluminum nitride piezoelectric layer to the sacrificial layer in the release chamber, and then removing the sacrificial layer in the release chamber by etching with S8 gas in an embodiment of the method provided by the present application;
FIG. 10 is a scanning electron microscope image of a release chamber configuration after S8 gas etching removal of a sacrificial layer release device within the release chamber in accordance with one embodiment of the method provided herein;
FIG. 11 is an electron microscope scanning image of a top view of the design 1 with a period of 12 μm and an interdigital width of 8.5 μm for the top electrode;
FIG. 12 is an electron microscope scanning of a top view of the design 2 with a period of 2 μm and an interdigital width of 1 μm for the top electrode;
FIG. 13 is a simulation mode diagram of the multi-physics finite element simulation software for the design 1;
FIG. 14 is a simulation mode diagram of the multi-physics finite element simulation software for the design 2;
fig. 15 is an admittance chart of the corresponding manufactured product 1 of the design 1 tested in the transmission characteristic experiment;
fig. 16 is an admittance chart of the corresponding manufactured product 2 of the design 2 tested in the transmission characteristic experiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any inventive step, are within the scope of the passivation according to the invention.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict.
As shown in fig. 1 to 9, the present application provides a method for manufacturing an aluminum nitride lamb wave resonator, including the following steps:
s1, etching the upper surface of the silicon wafer 1 to generate a release cavity 3 with a concave middle part, and growing a silicon dioxide film on the upper surface of the silicon wafer with the release cavity 3 by adopting a thermal oxidation method to serve as a passivation layer 2;
s2, depositing a sacrificial layer 4 of polysilicon on the upper surface of the silicon wafer 1 by using a Low Pressure Chemical Vapor Deposition (LPCVD) method to fill the release chamber 3 with the passivation layer 2,
s3, removing the sacrificial layer 4 on the periphery of the release cavity 3 by a re-etching method until the passivation layer 2 is exposed, and flattening the upper surface of the silicon wafer 1 by using a Chemical Mechanical Polishing (CMP) method; and a step of fabricating a resonator on the planarized upper surface.
The inventor is through a large amount of experimental studies, think that aluminium nitride lamb wave syntonizer's yields is not high, an important reason is when realizing the release suspension of syntonizer, when using gas phase corrosion syntonizer bottom monocrystalline silicon substrate, whether isotropic etching can lead to syntonizer periphery monocrystalline silicon to appear corroding on a large scale, lead to acoustic energy to reveal to the ineffective area, influence the quality factor (Q) of syntonizer, and probably lead to the syntonizer of syntonizer to drop, current technology is difficult to avoid releasing cavity body cave in or the phenomenon of throwing excessively.
In order to avoid lateral undercutting (undercut) of the release cavity caused by the release process, it has been proposed to deposit a layer of silicon dioxide on the silicon wafer as a release protective layer by Low Pressure Chemical Vapor Deposition (LPCVD) and refill polysilicon as a sacrificial layer, but since the density and mass of the silicon dioxide deposited by Low Pressure Chemical Vapor Deposition (LPCVD) are limited, the requirement of the lamb wave resonator for retarding the lateral undercutting effect is difficult to achieve.
Through a large amount of experimental researches, the inventor also finds that molybdenum (Mo) metal is an ideal choice for the aluminum nitride lamb wave resonator as the bottom electrode material, but another important reason that the yield of the aluminum nitride lamb wave resonator is not high is that the molybdenum (Mo) metal bottom electrode grown in the prior art has a poor structure, and the appearance of the upper surface of the sacrificial layer has an important influence on the film forming quality of a thin film grown on the upper surface of the sacrificial layer before the device is released; the appearance of the upper surface of the sacrificial layer is an important reason for the defects of poor coverage, poor growth quality, large stress at the step and the like of the aluminum nitride thin film.
In view of the above, the applicant creatively provides the lowest interface trap density and the highest quality oxide layer by the thermal oxidation method, and avoids the lateral under etching; and a common step covering layer with good step covering is formed, and the process is also beneficial to large-scale production.
In view of the above, the inventor provides a polysilicon reverse etching method, which firstly deposits a sacrificial layer made of polysilicon on the upper surface of the silicon wafer 1 by a Low Pressure Chemical Vapor Deposition (LPCVD) method, thereby reducing unnecessary vapor phase reaction and improving the quality of the film growth of the sacrificial layer 4; then removing the sacrificial layer 4 of the polycrystalline silicon on the periphery of the release cavity 3 by etching until the passivation layer 2 is exposed, removing the polycrystalline silicon outside the release cavity, and then flattening the upper surface of the silicon wafer 1 by Chemical Mechanical Polishing (CMP); so as to better damage the rapid CMP and the surface planarization, unexpectedly obtain good planarization effect, and obviously improve the growth quality and the step coverage.
In various methods for fabricating an aluminum nitride lamb wave resonator, Reactive Ion Etching (RIE) is preferably used to etch the release cavities 3 in S1.
In the various methods for fabricating an aluminum nitride lamb wave resonator, reactive ion etching RIE is preferably used to etch and remove the sacrificial layer 4 at the periphery of the release cavity 3 until the passivation layer 2 is exposed in S2.
In the various methods for fabricating an aluminum nitride lamb wave resonator, the step of planarizing the aluminum nitride lamb wave resonator in S3 to the boundary of the release cavity 3 should be less than 45 nm.
Further, in the various methods of manufacturing an aluminum nitride lamb wave resonator according to the present application, the step of manufacturing the resonator preferably includes:
s4, depositing an aluminum nitride seed layer 5 on the planarized upper surface, depositing a bottom electrode material layer, and patterning to form a bottom electrode 6;
s5, depositing an aluminum nitride piezoelectric layer 7 on the upper surface of the silicon wafer with the bottom electrode 6, growing a top electrode material layer on the upper surface of the aluminum nitride piezoelectric layer 7, and then patterning and stripping to form a top electrode 8;
s7, patterning the aluminum nitride piezoelectric layer 7, etching to form a plurality of release grooves 11 penetrating through the aluminum nitride piezoelectric layer 7 and the aluminum nitride seed layer 5 to the sacrificial layer 4, wherein a pattern formed by the plurality of release grooves 11 is a prefabricated resonator area;
s8, removing the sacrificial layer 4 in the release cavity 3 through the vapor phase corrosion of the release groove 11 to form an air reflection cavity, and releasing the resonant vibrator to realize the preparation of the device.
In order to further improve the film uniformity of the bottom electrode and the aluminum nitride piezoelectric layer 7, the applicant creatively deposits the aluminum nitride seed layer 5, unexpectedly obtains the growth quality of the metal molybdenum Mo bottom electrode material layer film, simultaneously guarantees the growth quality of the aluminum nitride piezoelectric layer 7, and the periphery of the aluminum nitride piezoelectric layer 7 grows in situ on the aluminum nitride seed layer 5, thus having unexpected quality.
The bottom electrode material is molybdenum Mo, and the top electrode material is preferably aluminum (A1) or gold (Au).
On the basis of the embodiment provided with the step of manufacturing the resonator oscillator, the step of manufacturing the resonator oscillator further comprises S6 after S5, and etching the aluminum nitride piezoelectric layer 7 to the bottom electrode 6 to form the bottom electrode opening 9; and respectively depositing electrode pad material layers on the top electrode 8 and the bottom electrode opening 9, and respectively stripping to form a top electrode surface pad and a bottom electrode surface pad.
The top and bottom electrode surface pads, collectively referred to as electrode surface pads 10, provide a good electrical interconnect structure, and the electrode pad material is preferably aluminum.
In the present application, in addition to the embodiment including the step of fabricating the resonator oscillator, in the step of fabricating the resonator oscillator, the bottom electrode material layer is patterned in S4, and the bottom electrode circuit region, the bottom electrode electrical interconnection region, and the first lateral support portion physically and electrically connecting the bottom electrode circuit region and the bottom electrode electrical interconnection region are reserved; the projection of the bottom electrode circuit area on the surface of the release cavity 3 is positioned inside the release cavity 3, and the projection of the bottom electrode electrical interconnection area on the surface of the release cavity 3 is positioned outside the release cavity 3.
The reservation adopts electricity interconnection, reduces the number of processes, especially masks, and obviously reduces the production cost.
The patterning of the bottom electrode may be a flat plate electrode, or may also be an interdigital electrode, which is not limited in this embodiment.
On the basis of the embodiment provided with the step of manufacturing the resonator oscillator, in the step of manufacturing the resonator oscillator, the magnetron sputtering method is adopted for depositing the bottom electrode material layer in S4; the patterning of the bottom electrode 6 employs a Reactive Ion Etching (RIE) method.
The present inventors have provided a method for high-speed, low-temperature processability and low damage.
Further, in S5, when the top electrode material layer is grown and patterned on the upper surface of the aluminum nitride piezoelectric layer 7, the top electrode circuit area of the top electrode 8, the top electrode electrical interconnection area, and the second lateral support portion physically and electrically connecting the top electrode circuit area and the top electrode electrical interconnection area are reserved; the projection of the top electrode circuit area on the surface of the release cavity 3 is positioned inside the release cavity 3, and the projection of the top electrode electrical interconnection area on the surface of the release cavity 3 is positioned outside the release cavity 3.
Electrical interconnection is reserved, and the bottom electrode material layer of the aluminum nitride piezoelectric layer 7 above the bottom electrode electrical interconnection area is removed.
In S5, based on the embodiment provided with the step of fabricating the resonator, the aluminum nitride piezoelectric layer 7 is deposited on the top surface of the silicon wafer having the bottom electrode 6 by magnetron sputtering. The present inventors have provided a method for high-speed, low-temperature processability and low damage.
In the present application, in addition to the step of fabricating the resonator, in step S5, an adhesion layer is deposited on the upper surface of the aluminum nitride piezoelectric layer 7 by ion beam sputtering before the top electrode material layer is grown on the upper surface of the aluminum nitride piezoelectric layer 7.
Furthermore, the material of the adhesion layer is Ti. The transition layer for in-situ growth of the bottom electrode material layer is provided, the adhesion between the top electrode 8 and the aluminum nitride piezoelectric layer 7 is provided, and the top electrode 8 is prevented from falling off due to the difference of the thermal expansion coefficients of the materials.
On the basis of the embodiment provided with the step of manufacturing the resonator, the aluminum nitride piezoelectric layer 7 of the bottom electrode electrical interconnection area is etched in the step S6, the surface of the bottom electrode electrical interconnection area is exposed, and a bottom electrode opening 9 is formed; the top electrode 8 is electrically interconnected with the electrode pad material deposited in the area and is stripped to form a top electrode surface pad, the bottom electrode opening 9 is used for depositing the electrode pad material until the bottom electrode opening 9 is filled and the upper surface of the aluminum nitride piezoelectric layer 7 is higher to form a bottom electrode surface pad.
The top electrode surface pads and the bottom electrode surface pads are collectively referred to as electrode surface pads 10. The reservation adopts electricity interconnection, reduces the number of processes, especially masks, and obviously reduces the production cost.
In the embodiment provided with the step of forming the bottom electrode opening 9, the bottom electrode opening 9 is preferably formed by Reactive Ion Etching (RIE).
In the present embodiment, in addition to the step of fabricating the resonator, the aluminum nitride piezoelectric layer 7 is patterned in S7, and the regions of the first lateral support portion and the second lateral support portion are left. The projection of the figure formed by a plurality of etched release grooves 11 on the surface of the release cavity 3 is positioned in the release cavity 3, and the projection of the top electrode circuit area on the surface of the release cavity 3 and the projection of the bottom electrode circuit area on the surface of the release cavity 3 are positioned outside. Providing a foundation for the release device structure.
In the present application, based on the embodiment having the step of fabricating the resonator, the reactive ion etching RIE is used to etch and form the plurality of relief grooves 11 in S7.
In the present application, the etching of S8 is performed using a gas phase chemical etching medium of xenon difluoride (XeF) in addition to the step of fabricating the resonator2) Gas based on this, this application also claims an aluminum nitride lamb wave resonator prepared by the above method.
To provide an unexpected degree of the method provided by the present application in terms of the quality of the finished product, the inventors fabricated a specific design into a finished product using the above fabrication method, and then compared the simulated performance of the design with the measured performance of the finished product.
A person skilled in the art can compare the center frequency obtained by COMSOL Multiphysics multi-physical field finite element simulation of a designed product with the actual measurement center frequency obtained by a transmission characteristic experiment of a finished product, and the coincidence degree of the two data can be used for evaluating the actual measurement frequency band of the micro-electro-mechanical system resonator and the frequency band coincidence degree required by the design, so that the nondestructive degree and the yield of the manufacturing method of the micro-electro-mechanical system resonator and the high quality factor of a device product obtained based on the method can be evaluated.
In view of the fact that the present application relates to a method for manufacturing an on-chip multi-band integrated lamb wave resonator, the inventor designs two lamb wave resonators (simply referred to as design products 1 and 2) with different frequency bands in a targeted manner, and manufactures corresponding manufactured products (simply referred to as manufactured products 1 and 2) are manufactured through the manufacturing method provided by the present application.
Specifically, the design products 1 and 2 are resonators with the same parameters as follows: selecting a 6-inch high-resistance silicon wafer with the resistivity of 10000 omega cm from the SI, wherein the depth of a release cavity 3 is 1 mu m, and the thickness of a sacrificial layer 4 in S2 is 1.5 mu m; s4 the thickness of the deposited aluminum nitride seed layer 5 is 100 nm; the bottom electrode material in S4 is molybdenum metal, the thickness of the bottom electrode is 200nm, and the thickness of the S5 aluminum nitride piezoelectric layer 7 is 1 μm; the depth of the etching release groove 11 in the S7 is 1100 nm; the top electrode material is aluminum (A1), the top electrode thickness is 200n (including the top electrode material layer thickness of 180nm + the adhesion layer thickness of 20nm), the adhesion layer material is Ti, and the bottom electrode is a flat plate electrode.
the designed product 1 adopts an interdigital top electrode with a period of 12 μm and an interdigital width of 8.5 μm as shown in an electron microscope scanning image of fig. 11; the dimensions of the relief cavity are 260 μm × 120 μm and the dimensions of the resonator are 222 μm × 96 μm.
The designed product 2 adopts an interdigital top electrode with the period of 2 μm and the interdigital width of 1 μm as shown in an electron microscope scanning image of fig. 12; the dimensions of the relief cavity are 90 μm × 110 μm and the dimensions of the resonator are 72 μm × 106 μm.
Firstly, the inventor obtains the center frequency of the designed products 1 and 2 through COMSOL Multiphysics multi-physical field finite element simulation, as shown in a simulation mode diagram of the designed product 1 shown in FIG. 13, the resonance center frequency of the designed product 1 is 393.7 MHz; as shown in the simulation mode diagram of the design 2 in fig. 14, the center frequency of the resonance of the design 2 is 2.13 GHz.
Secondly, the inventor adopts the method provided by the application and the design parameters of the designed products 1 and 2 to respectively manufacture the finished products 1 and 2, and the specific method is as follows:
s1, etching the upper surface of the silicon chip 1 by a counter ion etching RIE method to generate a release cavity 3 with a concave middle part, and growing a silicon dioxide film on the upper surface of the silicon chip with the release cavity 3 by a thermal oxidation method to serve as a passivation layer 2;
s2, depositing a sacrificial layer 4 of polysilicon on the upper surface of the silicon wafer 1 by using a Low Pressure Chemical Vapor Deposition (LPCVD) method to fill the release chamber 3 with the passivation layer 2,
s3, etching and removing the sacrificial layer 4 on the periphery of the release cavity 3 by a reactive ion etching RIE method until the passivation layer 2 is exposed, and flattening the upper surface of the silicon wafer 1 by a Chemical Mechanical Polishing (CMP) method, wherein the height difference between the silicon wafer and the boundary of the release cavity 3 in the S3 is less than 45 nm;
s4, depositing an aluminum nitride seed layer 5 on the flattened upper surface, depositing a bottom electrode material layer by adopting a magnetron sputtering method, and patterning by Reactive Ion Etching (RIE) to form a bottom electrode 6;
s5, depositing an aluminum nitride piezoelectric layer 7 on the upper surface of the silicon wafer with the bottom electrode 6 by adopting a magnetron sputtering method, depositing an adhesion layer Ti on the upper surface of the aluminum nitride piezoelectric layer 7 by adopting an ion beam sputtering method, growing a top electrode material layer, and patterning and stripping to form a top electrode 8;
s6, etching the aluminum nitride piezoelectric layer 7 to the bottom electrode 6 by a reactive ion etching RIE method to form a bottom electrode opening 9; and respectively depositing electrode pad material layers on the top electrode 8 and the bottom electrode opening 9, and respectively stripping to form a top electrode surface pad and a bottom electrode surface pad.
S7, patterning the aluminum nitride piezoelectric layer 7, forming a plurality of release grooves 11 by etching through the aluminum nitride piezoelectric layer 7 and the aluminum nitride seed layer 5 to the sacrificial layer 4 by adopting a Reactive Ion Etching (RIE) method, wherein a pattern formed by the plurality of release grooves 11 is a prefabricated resonator area;
s8, removing the sacrificial layer 4 in the release cavity 3 by vapor phase etching of the release groove 11 to form an air reflection cavity, wherein the vapor phase chemical etching medium is xenon difluoride (XeF)2) And releasing the resonance oscillator by using the gas to realize the preparation of finished products 1 and 2.
Finally, the inventor conducts transmission characteristic experiments on the manufactured products 1 and 2 to respectively obtain the actually measured center frequencies of the manufactured products 1 and 2. FIG. 15 is a transmission characteristic test admittance diagram of the manufactured product 1, f of the manufactured product 1sIs 402.1 MHz; FIG. 16 is a transmission characteristic test admittance diagram of the manufactured product 2, f of the manufactured product 2s2.097 GHz.
The simulation performance of the designed products 1 and 2 and the actual measurement performance of the corresponding finished products 1 and 2 are shown in the table below, and it can be seen that the lamb wave resonator finished products with the actual measurement center frequency highly matched with the simulation center frequency in different frequency bands can be obtained by the manufacturing method provided by the application.
Therefore, after the technical problems of the lamb wave resonator manufacturing method are found, the inventor creatively provides a solution, and then obtains the lamb wave resonator capable of manufacturing high quality factors, and obviously improves the yield. The method realizes the high-quality and high-yield manufacturing of the on-chip multi-band integrated lamb wave resonator.
On the basis of the finished product obtained, the applicant further applied a passivation layer (SiO) to the finished product 12) The shape is subjected to release cavity electron microscope scanning to obtain a release cavity electron microscope scanning image as shown in FIG. 10, the regular degree visual angle effect of the release cavity shape is presented, and the cross section shape of the release cavity of the finished product and the cross section of the release cavity of the designed product are presentedThe surface shape has high inosculation and good crystal orientation consistency; it can further be seen that the method provided by the inventors has a high degree of controllability over the shape of the release cavity, which is why the quality factor and yield of the device obtained by the method provided by the present application are guaranteed.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Finally, it should be noted that the terms used in the present application are generally terms commonly used by those skilled in the art, and if they are inconsistent with the commonly used terms, the terms in the present application shall control.
In this context, the terms "upper" and "lower" are used to describe the dimension of an object extending in a direction perpendicular to the surface of the substrate. "upper" means extending from the substrate surface in the direction of the first electrode structure. "lower" means extending from the substrate surface in a direction away from the first electrode structure.
In this context, the term "upper surface" is used to describe all or part of the surface of the silicon wafer after the silicon wafer is placed in the same orientation as S1 after the completion of the previous step, and thus the position of the "upper surface" is relative to the corresponding position defined by the term.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions in the embodiments of the present application.
Claims (11)
1. A method for manufacturing an aluminum nitride lamb wave resonator is characterized by comprising the following steps: the method comprises the following steps:
s1, etching the upper surface of the silicon wafer (1) to generate a release cavity (3) with a concave middle part, and growing a silicon dioxide film on the upper surface of the silicon wafer with the release cavity (3) by adopting a thermal oxidation method to serve as a passivation layer (2);
s2, depositing a sacrificial layer (4) made of polysilicon on the upper surface of the silicon wafer (1) by using a Low Pressure Chemical Vapor Deposition (LPCVD) method until a release cavity (3) with a passivation layer (2) is filled,
s3, removing the sacrificial layer (4) on the periphery of the release cavity (3) by a re-etching method until the passivation layer (2) is exposed, and flattening the upper surface of the silicon wafer (1) by a Chemical Mechanical Polishing (CMP) method; and
and manufacturing a resonator on the flattened upper surface.
2. The method of claim 1,
etching in S1 to form a release cavity (3) and adopting Reactive Ion Etching (RIE);
in the S3, Reactive Ion Etching (RIE) is adopted to etch and remove the sacrificial layer (4) at the periphery of the release cavity (3) until the passivation layer (2) is exposed;
the difference in level planarized in S3 to the border of the release chamber (3) should be less than 45 nm.
3. The method of claim 1, wherein the step of fabricating the resonator element comprises:
s4, depositing an aluminum nitride seed layer (5) on the planarized upper surface, depositing a bottom electrode material layer, and patterning to form a bottom electrode (6);
s5, depositing an aluminum nitride piezoelectric layer (7) on the upper surface of a silicon wafer with a bottom electrode (6), growing a top electrode material layer on the upper surface of the aluminum nitride piezoelectric layer (7), and patterning and stripping to form a top electrode (8);
s7, patterning the aluminum nitride piezoelectric layer (7), etching to form a plurality of release grooves (11) to penetrate through the aluminum nitride piezoelectric layer (7) and the aluminum nitride seed layer (5) to the sacrificial layer (4), wherein a pattern formed by the plurality of release grooves (11) is a prefabricated resonator area;
s8, removing the sacrificial layer (4) in the release cavity (3) through gas phase corrosion of the release groove (11) to form an air reflection cavity, and releasing the resonant oscillator to realize the preparation of the device.
4. A method according to claim 3, characterized by the steps of: the step of manufacturing the resonant vibrator further comprises S6 after S5, and etching the aluminum nitride piezoelectric layer (7) to the bottom electrode (6) to form a bottom electrode opening (9); and respectively depositing electrode pad material layers in the top electrode opening (8) and the bottom electrode opening (9), and respectively stripping to form a top electrode surface pad and a bottom electrode surface pad.
5. The method of claim 3, wherein the bottom electrode material layer is patterned in S4, leaving the bottom electrode circuit area, the bottom electrode electrical interconnection area, and the first lateral support physically and electrically connecting the bottom electrode circuit area and the bottom electrode electrical interconnection area; the projection of the bottom electrode circuit area on the surface of the release cavity (3) is positioned inside the release cavity (3), and the projection of the bottom electrode electrical interconnection area on the surface of the release cavity (3) is positioned outside the release cavity (3).
6. The method of claim 3, wherein the step of depositing the bottom electrode material layer in S4 is performed by magnetron sputtering; the bottom electrode (6) is formed by patterning by a Reactive Ion Etching (RIE) method.
7. The method of claim 5,
when a top electrode material layer grows on the upper surface of the aluminum nitride piezoelectric layer (7) and is patterned in S5, a top electrode circuit area and a top electrode electric interconnection area of the top electrode (8) and a second transverse supporting part which is physically and electrically connected with the top electrode circuit area and the top electrode electric interconnection area are reserved; the projection of the top electrode circuit area on the surface of the release cavity (3) is positioned inside the release cavity (3), and the projection of the top electrode electrical interconnection area on the surface of the release cavity (3) is positioned outside the release cavity (3).
8. The method of claim 3,
s5, depositing an aluminum nitride piezoelectric layer (7) on the upper surface of the silicon wafer with the bottom electrode (6) by adopting a magnetron sputtering method;
s5, depositing an adhesion layer on the upper surface of the aluminum nitride piezoelectric layer (7) by an ion beam sputtering method before growing a top electrode material layer on the upper surface of the aluminum nitride piezoelectric layer (7);
the adhesion layer material is titanium (Ti).
9. The method of claim 7,
etching the aluminum nitride piezoelectric layer (7) of the bottom electrode electrical interconnection area in S6 until the surface of the bottom electrode electrical interconnection area is exposed to form a bottom electrode opening (9); the top electrode (8) is electrically interconnected with the electrode pad material deposited in the area and is stripped to form a top electrode surface pad, the bottom electrode opening (9) is used for depositing the electrode pad material until the bottom electrode opening (9) is filled with the electrode pad material and is higher than the upper surface of the aluminum nitride piezoelectric layer (7) to be stripped to form a bottom electrode surface pad;
and (7) patterning the aluminum nitride piezoelectric layer (7) in the step (S7) to reserve the areas of the first transverse supporting part and the second transverse supporting part. The projection of a figure formed by a plurality of etched release grooves (11) on the surface of the release cavity (3) is positioned in the release cavity (3), and the projection of the top electrode circuit area on the surface of the release cavity (3) and the projection of the bottom electrode circuit area on the surface of the release cavity (3) are positioned outside.
10. The method of claim 2,
s6, adopting Reactive Ion Etching (RIE) for the bottom electrode opening (9);
a plurality of release grooves (11) are formed in the S7 in an etching mode and Reactive Ion Etching (RIE) is adopted;
the etching of S8 adopts gas phase chemical corrosionThe medium being xenon difluoride (XeF)2) A gas.
11. An aluminum nitride lamb wave resonator, characterized in that: the aluminum nitride lamb wave resonator manufactured by the method according to any one of claims 1 to 9.
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