CN111294007A - Ultrahigh frequency piezoelectric resonator and preparation method thereof - Google Patents
Ultrahigh frequency piezoelectric resonator and preparation method thereof Download PDFInfo
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- CN111294007A CN111294007A CN202010010106.5A CN202010010106A CN111294007A CN 111294007 A CN111294007 A CN 111294007A CN 202010010106 A CN202010010106 A CN 202010010106A CN 111294007 A CN111294007 A CN 111294007A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 238000002955 isolation Methods 0.000 claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000005530 etching Methods 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention belongs to the field of resonators, and provides an ultrahigh frequency piezoelectric resonator and a preparation method thereof, which solve the problems that the performance of a device is influenced by uneven etched surface, uneven etched thickness and stress concentration caused by forming a cavity on a substrate by adopting a back etching mode of the ultrahigh frequency piezoelectric resonator. The method comprises etching a groove on the upper surface of a substrate; depositing a first isolation layer on the surface of the groove, wherein the thickness of the first isolation layer is smaller than the depth of the groove; filling a sacrificial layer in the whole groove, wherein the upper surface of the sacrificial layer is flush with the upper surface of the substrate layer; depositing a second isolation layer on the upper surface of the substrate filled with the sacrificial layer; forming a piezoelectric layer on an upper surface of the second isolation layer; forming an electrode layer on an upper surface of the piezoelectric layer; and forming a release port above the groove, and removing the sacrificial layer through the release port to form a cavity. According to the invention, the sacrificial layer in the groove is surrounded by the two isolation layers, so that the problem of uneven etching surface caused by removing the sacrificial layer can be avoided.
Description
Technical Field
The invention relates to the field of resonators, in particular to an ultrahigh frequency piezoelectric resonator and a preparation method thereof.
Background
With the rapid development of wireless communication, the frequency band becomes more and more crowded, and in order to meet the demand of more and more huge markets, the frequency band gradually develops to high frequency and ultrahigh frequency. High-frequency-band, large-bandwidth and high-stability electronic equipment becomes a product urgently needed by the market. Wherein, the filter is used as an indispensable device in wireless electronic communication; the resonator, which is one of the components of the filter, is also required to be updated continuously to meet the market demand. Nowadays, the structure of the ultrahigh frequency resonator is gradually proposed at home and abroad, and the ultrahigh frequency resonator of the new generation has large bandwidth, ultrahigh frequency and ultrahigh electromechanical coupling coefficient
The characteristic of the filter is widely concerned at home and abroad, the performance makes the filter become a key technology for realizing 5G and 6G communication, and the filter can be suitable for mobile phone radio frequency filters of 4-6GHz and above.
The birth of a product not only needs a new design structure to be proposed, but also needs a back-end process to gradually follow up. In recent years, piezoelectric micro-electro-mechanical systems (MEMS) technology is also being developed, but the processing technology for the uhf piezoelectric resonator is still under study. The existing processing technology usually adopts a back etching mode to form a cavity on a substrate, and the thickness of the substrate is too large, so that the etching area is large during back etching, and the process is easy to cause the problems of uneven etching surface, uneven etching thickness, stress concentration and the like, thereby causing the uneven thickness of a piezoelectric layer and influencing the performance of a device.
Disclosure of Invention
The invention provides an ultrahigh frequency piezoelectric resonator and a preparation method thereof, and solves the problems that the performance of a device is affected by uneven etched surface, uneven etched thickness, stress concentration and the like caused by the fact that a cavity is formed on a substrate by the ultrahigh frequency piezoelectric resonator in a back etching mode.
In order to solve the technical problem, the invention provides a preparation method of an ultrahigh frequency piezoelectric resonator, which comprises the following steps:
etching a groove on the upper surface of the substrate;
depositing a first isolation layer on the surface of the groove, wherein the thickness of the first isolation layer is smaller than the depth of the groove;
filling a sacrificial layer in the whole groove, wherein the upper surface of the sacrificial layer is flush with the upper surface of the substrate layer;
depositing a second isolation layer on the upper surface of the substrate filled with the sacrificial layer;
forming a piezoelectric layer on an upper surface of the second isolation layer;
forming an electrode layer on an upper surface of the piezoelectric layer;
a release port is formed over the recess through which the sacrificial layer is removed to form a cavity.
Further, a first isolation layer is deposited on the upper surface of the substrate, and the upper surface of the sacrificial layer is flush with the upper surface of the first isolation layer deposited on the upper surface of the substrate.
Further, the material of the first isolation layer and the second isolation layer is silicon dioxide, silicon carbide or silicon nitride.
Further, the material of the sacrificial layer is polysilicon.
Further, an upper surface of the sacrificial layer is made flush with an upper surface of the substrate layer by chemical mechanical polishing.
Further, the piezoelectric layer is made of lithium niobate or lithium tantalate.
Further, the piezoelectric layer is formed by bonding with the second isolation layer.
Further, the electrode layer may be patterned by a photolithography technique.
Further, the shape of the release opening is circular or polygonal.
The invention also provides the ultrahigh frequency piezoelectric resonator prepared by the preparation method of the ultrahigh frequency piezoelectric resonator, the ultrahigh frequency piezoelectric resonator comprises a substrate layer, a first isolation layer, a second isolation layer, a piezoelectric layer and an electrode layer, the upper surface of the substrate layer is provided with a groove, the surface of the groove is provided with the first isolation layer, the second isolation layer is arranged above the first isolation layer, a cavity is formed between the first isolation layer and the second isolation layer, the piezoelectric layer is arranged above the second isolation layer, and the electrode layer is arranged above the piezoelectric layer. The ultrahigh frequency piezoelectric resonator is prepared by the preparation method of the ultrahigh frequency piezoelectric resonator.
The invention has the beneficial effects that: according to the invention, the groove is formed on the upper surface of the substrate, then the first isolation layer, the sacrificial layer, the second isolation layer, the piezoelectric layer and the electrode layer are sequentially formed on the groove, the groove is surrounded by the first isolation layer and the second isolation layer, the release port is formed above the groove, the sacrificial layer is removed through the release port to form the cavity, the substrate structure and the piezoelectric layer structure are prevented from being damaged when the cavity is formed, and the preparation of the ultrahigh frequency piezoelectric resonator is completed.
Drawings
FIG. 1 is a flow chart of the preparation of the UHF piezoelectric resonator of the present invention;
FIG. 2 is a schematic view of forming a recess in an upper surface of a substrate;
FIG. 3 is a schematic illustration after deposition of a first isolation layer;
FIG. 4 is a schematic diagram of the groove after being filled with a sacrificial layer;
FIG. 5 is a schematic illustration after deposition of a second isolation layer;
fig. 6 is a schematic view after forming a piezoelectric layer on the upper surface of the second isolation layer;
FIG. 7 is a schematic view after forming an electrode layer on the upper surface of the piezoelectric layer;
FIG. 8 is a schematic view of a relief opening;
fig. 9 is a schematic view of the cavity formed after the sacrificial layer is released.
In the figure: 1-substrate, 2-groove, 3-first isolation layer, 4-sacrificial layer, 5-second isolation layer, 6-piezoelectric layer, 7-electrode layer, 8-release port, 9-cavity.
Detailed Description
The invention will be further described with reference to the accompanying drawings in which:
according to the ultrahigh frequency piezoelectric resonator, the groove is formed on the upper surface of the substrate, the first isolation layer, the sacrificial layer, the second isolation layer, the piezoelectric layer and the electrode layer are sequentially formed on the groove, the groove is surrounded by the first isolation layer and the second isolation layer, the sacrificial layer in the groove can be conveniently removed to form the cavity, the substrate structure and the piezoelectric layer structure are not damaged, and the performance of the ultrahigh frequency piezoelectric resonator is guaranteed.
The invention discloses a preparation method of an ultrahigh frequency piezoelectric resonator, which comprises the following steps as shown in figure 1:
s1, etching a groove 2 on the upper surface of the substrate 1, as shown in fig. 2, the groove 2 may be directly etched on the upper surface of the substrate 1, and the size of the groove 2 is larger than the area of the desired resonator working area.
S2, depositing a first isolation layer 3 on the surface of the groove 2 or the upper surface of the substrate 1 and the surface of the groove 2, the thickness of the first isolation layer 3 being less than the depth of the groove 2, as shown in fig. 3. The first isolation layer 3 is mainly used to cover the surface of the recess 2, thereby isolating the substrate 1 from the sacrificial layer 4, and further, the material of the first isolation layer 3 is preferably silicon dioxide, silicon carbide or silicon nitride.
S3, filling the whole groove with the sacrificial layer 4, wherein the upper surface of the sacrificial layer 4 is flush with the upper surface of the substrate layer 1 or the upper surface of the first isolation layer 3 of the upper surface of the substrate layer 1, as shown in fig. 4. The material of the sacrificial layer is preferably polysilicon. A chemical mechanical polishing process or the like may be used to ensure that the upper surface of the sacrificial layer 4 is flush with the upper surface of the first isolation layer 3.
S4, depositing a second isolation layer 5 on the upper surface of the substrate filled with the sacrificial layer 4, as shown in fig. 5. The second isolation layer 5 is used for isolating the sacrificial layer 4 from the piezoelectric layer 6; the material of the second isolation layer 5 may be silicon dioxide, silicon carbide, silicon nitride, or the like.
S5, forming the piezoelectric layer 6 on the upper surface of the second isolation layer 5, as shown in fig. 6, the material of the piezoelectric layer may be lithium niobate or lithium tantalate, and the forming manner is preferably the bonding of the piezoelectric layer 6 and the second isolation layer 5, that is, the piezoelectric layer is distributed on the upper surface of the second isolation layer through the bonding technique.
S6, forming an electrode layer 7 on the upper surface of the piezoelectric layer 6, as shown in fig. 7. The electrode layer 7 can be formed by patterning through a photolithography technology, and the electrode layer 7 and the piezoelectric layer 6 form an ultrahigh frequency piezoelectric resonator structure.
S7, forming a release opening 8 from above the groove 2, and removing the sacrificial layer through the release opening 8 to form a cavity 9, as shown in fig. 8 and 9. Since the thickness of the substrate 1 is too large to open the release opening from the back, the release opening 8 may be formed above the groove 2 in a direction perpendicular to the substrate 1, and the number of the release openings 8 may be one, two, or more. Sacrificial layer 4 is etched away through release opening 8, cavity 9 is formed, first isolation layer 3 separates substrate layer 1 from sacrificial layer 4, avoids destroying the substrate structure when sacrificial layer 4 releases, and second isolation layer 5 isolates piezoelectric layer 6 from sacrificial layer 4, has protected the lower surface of piezoelectric layer 6, has just so avoided the problem of sculpture surface unevenness from this. The finally formed cavity 9 may contain air, nitrogen, etc., and may also be maintained in a vacuum state. The shape of the release opening is circular, polygonal or annular, and the like, and can also be an irregular pattern.
The invention also provides an ultrahigh frequency piezoelectric resonator prepared by the preparation method of the ultrahigh frequency piezoelectric resonator, the ultrahigh frequency piezoelectric resonator comprises a substrate layer 1, a first isolation layer 3, a second isolation layer 5, a piezoelectric layer 6 and an electrode layer 7, a groove 2 is formed in the upper surface of the substrate layer 1, the first isolation layer 3 is arranged on the surface of the groove 2, the second isolation layer 5 is arranged above the first isolation layer 3, a cavity 9 is formed between the first isolation layer 3 and the second isolation layer 5, the piezoelectric layer 6 is arranged above the second isolation layer 5, and the electrode layer 7 is arranged above the piezoelectric layer.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. The preparation method of the ultrahigh frequency piezoelectric resonator is characterized by comprising the following steps of:
etching a groove on the upper surface of the substrate;
depositing a first isolation layer on the surface of the groove, wherein the thickness of the first isolation layer is smaller than the depth of the groove;
filling a sacrificial layer in the whole groove, wherein the upper surface of the sacrificial layer is flush with the upper surface of the substrate layer;
depositing a second isolation layer on the upper surface of the substrate filled with the sacrificial layer;
forming a piezoelectric layer on an upper surface of the second isolation layer;
forming an electrode layer on an upper surface of the piezoelectric layer;
a release port is formed over the recess through which the sacrificial layer is removed to form a cavity.
2. The method of claim 1, further comprising depositing a first isolation layer on the upper surface of the substrate, wherein the upper surface of the sacrificial layer is flush with the upper surface of the first isolation layer on the upper surface of the substrate.
3. The method of manufacturing an uhf piezoelectric resonator as claimed in claim 1, wherein the material of the first isolation layer and the second isolation layer is silicon dioxide, silicon carbide, or silicon nitride.
4. The method of claim 1, wherein the sacrificial layer is made of polysilicon.
5. The method of manufacturing a uhf piezoelectric resonator as claimed in claim 1, wherein the upper surface of the sacrificial layer is made flush with the upper surface of the substrate layer by chemical mechanical polishing.
6. The method of claim 1, wherein the piezoelectric layer is made of lithium niobate or lithium tantalate.
7. The method as claimed in claim 1, wherein said piezoelectric layer is formed by bonding with said second isolation layer.
8. The method of fabricating a uhf piezoelectric resonator as claimed in claim 1, wherein the electrode layer is patterned by photolithography.
9. The method of manufacturing an uhf piezoelectric resonator as claimed in claim 1, wherein the shape of the relief is circular or polygonal.
10. The uhf piezoelectric resonator manufactured by the method for manufacturing an uhf piezoelectric resonator according to any one of claims 1 to 9, wherein the uhf piezoelectric resonator includes a substrate layer, a first isolation layer, a second isolation layer, a piezoelectric layer, and an electrode layer, a groove is formed in the upper surface of the substrate layer, the first isolation layer is provided on the surface of the groove, the second isolation layer is provided above the first isolation layer, a cavity is formed between the first isolation layer and the second isolation layer, the piezoelectric layer is provided above the second isolation layer, and the electrode layer is provided above the piezoelectric layer.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113572444A (en) * | 2021-09-23 | 2021-10-29 | 深圳新声半导体有限公司 | Method for manufacturing bulk acoustic wave resonator |
| CN113595522A (en) * | 2021-07-13 | 2021-11-02 | 重庆胜普电子有限公司 | Method for manufacturing aluminum nitride lamb wave resonator |
| CN113810012A (en) * | 2021-09-23 | 2021-12-17 | 武汉敏声新技术有限公司 | Resonator |
| US11677381B2 (en) | 2021-10-19 | 2023-06-13 | Shenzhen Newsonic Technologies Co., Ltd. | Film bulk acoustic resonator structure and fabricating method |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113595522A (en) * | 2021-07-13 | 2021-11-02 | 重庆胜普电子有限公司 | Method for manufacturing aluminum nitride lamb wave resonator |
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| US11677381B2 (en) | 2021-10-19 | 2023-06-13 | Shenzhen Newsonic Technologies Co., Ltd. | Film bulk acoustic resonator structure and fabricating method |
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