CN107528561A - A kind of cavity type FBAR and preparation method thereof - Google Patents
A kind of cavity type FBAR and preparation method thereof Download PDFInfo
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- 238000000034 method Methods 0.000 claims abstract description 59
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- 238000000926 separation method Methods 0.000 claims abstract description 32
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 15
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000005516 engineering process Methods 0.000 claims abstract description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 238000001459 lithography Methods 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 11
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- 230000008021 deposition Effects 0.000 claims description 7
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- 229910052782 aluminium Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
- H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
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- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The present invention relates to a kind of cavity type FBAR, including substrate, separation layer, supporting layer, bottom electrode layer, piezoelectric layer and the top electrode layer set gradually from the bottom up, depression forms groove to separation layer upper surface middle part downwards, supporting layer and substrate close groove to form closed cavity, the height of the closed cavity lower surface is less than the height of substrate top surface, and the lower surface of the closed cavity is burnishing surface, the support layer material is SiC.The invention also discloses the preparation method of the acoustic resonator simultaneously.The present invention is stable by SiC supporting layers device architecture, improves power capacity.Effectively heat can be distributed, reduce the hot steady temperature of device, heat endurance is good.The inventive method removes amorphous silicon layer using acetone soln stripping technology (lift off), simplifies CMP, and milling time is reduced, and lapping uniformity improves, and improves the frequency stability and yield rate of device.
Description
Technical field
The present invention relates to a kind of resonator, belongs to radio-frequency micro electromechanical system (MEMS) technical field, in particular to a kind of sky
Lumen type FBAR；The invention also discloses the preparation method of the cavity type FBAR simultaneously.
Background technology
As wireless communication system develops towards miniaturization, high frequency, integrated direction, traditional dielectric filter and
SAW filter is also difficult to meet miniaturization and the requirement of high frequency, and the wave filter that FBAR is formed has
The incomparable working frequency of the incomparable volume advantage of Ceramic Dielectric Filter, SAW resonator and power capacity
Advantage.Particularly MEMS technology is more and more ripe, and FBAR becomes the development of current wireless communication system
Trend.
The main part of FBAR is " sandwich " structure that hearth electrode-piezoelectric membrane-top electrode is formed,
Mechanical energy is converted electrical energy into using the inverse piezoelectric effect of piezoelectric layer, and forms standing wave in the devices in the form of a sound wave.Due to
The speed of sound wave 5 orders of magnitude smaller than electromagnetic wave, therefore the size of FBAR is smaller than traditional devices.For body sound
Sound wave is limited in piezoelectric layer by most important part for wave resonator, at present, according to the method for limitation sound wave by conventional thin
Film body acoustic resonator is divided into two major classes：
One is solid is equipped with type (SMR), its structure is as shown in figure 1, its operation principle is thick using quarter-wave
The spaced composition reflecting layer of high acoustic impedance layer and low acoustic impedance layer of degree, the reflection of sound wave is realized, limit dissipation of energy.This
Kind solid-state, which is equipped with type bulk acoustic wave resonator, has preferable mechanical strength and power capacity, can apply under the conditions of high-power,
But the Bragg reflecting layer of SMR type resonators has high requirement, film for the thickness and roughness of every thin film
Between Stress Control be also required to strictly control, not so easily come off, compare in technique and be difficult to.
The second is cavity type FBAR, realizing the mode of cavity at present mainly has two kinds：Air lumen type
(FBAR), its structure is as shown in Figure 2；Etching type is carried on the back, its structure is as shown in Figure 3.The work of cavity type FBAR
Principle is to be reflected using sound wave in the interface of hearth electrode or supporting layer and air, and sound wave is limited in into piezoelectric layer, is realized
Resonance.The resonator reflection efficiency of this class formation is higher, has a high q-factor, filter with low insertion loss, the advantages that can integrating, still, FBAR master
Body structure be vacantly with silicon base, overhanging portion of its bottom at cavity structure edge is easily broken.So cavity
The preparation process of type FBAR is complex, and the control and preparation technology to membrane stress need strict want
Ask.
In application field, traditional cavity type FBAR is difficult to hold due to the presence of structure hollow air cavity compared to SMR type structures
By larger power density, under powerful working condition, device is difficult to effectively distribute in heat caused by resonance, together
When cavity edge assemble in a large amount of stress so that device failure fail.
Usual cavity type FBAR process is：First in one groove of silicon substrate mountain anisotropic etch, then recessed
Sacrificial layer material is filled in groove, sacrificial layer material can be metal Al, Mg or SiO2.Surface deposits one after CMP planarization
Layer metal film, the corresponding position above sacrifice layer etch hearth electrode figure.Then in hearth electrode disposed thereon piezoelectric layer, warp
The border of the piezoelectricity layer pattern covering substrate upper groove formed after etching, and expose the exit of hearth electrode.Next pressing
Layer of metal layer is deposited in electric layer, top electrode is used as after etching.Corrode one over the piezoelectric layer followed by dry etching to release
Window is put, layer segment will be sacrificed and exposed.Finally discharged from release window by sacrifice layer, can both obtain cavity type FBAR.This
Class method still suffers from certain difficulty when making.
The content of the invention
Based on above technical problem, the invention provides a kind of cavity type FBAR, so as to solve with
Toward acoustic resonator high processing costs, time length, complicated, the technical problem of heat endurance and power capacity difference is made；Meanwhile base
In the cavity type FBAR, the invention also discloses the preparation method of the cavity type FBAR.
To solve above technical problem, the technical solution adopted by the present invention is as follows：
A kind of cavity type FBAR, including set gradually from the bottom up substrate, separation layer, supporting layer,
Bottom electrode layer, piezoelectric layer and top electrode layer,
Depression forms groove to separation layer upper surface middle part downwards, and supporting layer and substrate close groove to form closed cavity,
The height of the closed cavity lower surface is less than the height of substrate top surface, and the lower surface of the closed cavity is burnishing surface.
Based on above technical scheme, the piezoelectric layer is arranged on supporting layer upper end, and the bottom electrode layer is arranged on piezoelectric layer
In the middle part of lower end, and bottom electrode layer lower surface is arranged on supporting layer, and the top electrode layer is arranged on piezoelectric layer upper center；It is described
The following table area of piezoelectric layer is more than the top surface area of groove；
The support layer material is SiC.
Based on above technical scheme, described piezoelectric layer is the aln layer with C axis oriented.
Based on above technical scheme, the substrate is silicon substrate.
Based on above technical scheme, the separation layer is thermal oxide SiO2Layer.
Based on above technical scheme, the supporting layer thickness is 50nm.
Based on above technical scheme, the material of the bottom electrode layer and top electrode layer is the metal with acoustic impedance.
In summary, by adopting the above-described technical solution, the beneficial effects of the invention are as follows：The present invention is passed by adding heat
Heat can effectively be distributed as device support layer, it is steady to reduce device heat by the SiC that conductance is high, thermal coefficient of expansion is small
State temperature, so that device architecture is stable, power capacity is improved, heat endurance is good；Simultaneously as SiC hardness is big, it is resistance to
It is good to grind performance, can effectively support whole device architecture, improves the overall mechanical strength of device；The thickness of SiC supporting layers
It is the insertion loss brought to device by emulating obtained optimal value, effectively can radiate and meet with stresses to select as 50nm
It is and minimum.
Meanwhile based on above cavity type FBAR, present invention also offers a kind of cavity type thin-film body sound
The preparation method of wave resonator, this method comprise the following steps：
S1 makes groove profile by lithography on substrate, and formation is etched in advance on substrate using dry etching or wet-etching technology
If groove；
After the completion of S2 etchings, aoxidize to form separation layer using wet-oxygen oxidation technique on substrate；
S3 makes groove by lithography using reversion glue photoetching process, and deposits one layer of amorphous silicon layer using magnetron sputtering technique, non-
Crystal silicon layer thickness is higher than the depth of groove, after the completion of deposition, is removed using acetone soln stripping technology unnecessary non-outside groove
Crystal silicon layer, then grinding make it that amorphous silicon layer flushes with separation layer in groove；
S4 deposits one layer of supporting layer in separation layer upper surface using magnetron sputtering technique；
S5 is deposited using magnetron sputtering technique or electron beam evaporation process in the upper surface of supporting layer and is etched bottom electricity
Pole layer；
S6 is deposited by magnetron sputtering technique on bottom electrode layer and is made piezoelectric layer by lithography, and the piezoelectric layer following table area is more than
The top surface area of groove；
Surface is deposited using magnetron sputtering technique or electron beam evaporation process and is etched top electrode layer S7 over the piezoelectric layer；
The non-crystalline silicon of amorphous silicon layer forms closed cavity and drying in S8 release grooves, completes to prepare.
In summary, it is of the invention compared with traditional cavity type FBAR technique, due to deposited amorphous silicon
, it is necessary to which the non-crystalline silicon removed is largely reduced after layer, CMP is simplified, milling time is reduced, and lapping uniformity improves, and is improved
The frequency stability and yield rate of device, relatively low is required to milling apparatus during grinding, reduces processing cost, difficulty on the whole
And the time.
Brief description of the drawings
Fig. 1 is that solid-state is equipped with type FBAR (SMR) structural representation.
Fig. 2 is air lumen type FBAR (FBAR) structural representation.
Fig. 3 is back of the body quarter type film bulk acoustic resonator structure schematic diagram.
Fig. 4 is the structural representation of cavity type FBAR of the present invention.
Fig. 5 is the silicon substrate profile after being etched in specific embodiment.
Fig. 6 is the profile after thermal oxide separation layer in specific embodiment.
Fig. 7 is the device profile map that reversion glue makes groove by lithography in specific embodiment.
Fig. 8 is the device profile map after deposition of amorphous silicon layers in specific embodiment.
Fig. 9 is that the device profile map after the outer amorphous silicon layer of groove is removed in specific embodiment.
Figure 10 is the device profile map after grinding in specific embodiment.
Figure 11 is to prepare the device profile map after supporting layer in specific embodiment.
Figure 12 is to prepare the device profile map after bottom electrode layer in specific embodiment.
Figure 13 is to prepare the device profile map after piezoelectric layer in specific embodiment.
Figure 14 is that the device profile map after top electrode layer is prepared in specific embodiment.
Marked in figure：1st, substrate；2nd, separation layer；3rd, closed cavity；4th, supporting layer；5th, bottom electrode layer；6th, piezoelectric layer；7th, push up
Electrode layer；8th, amorphous silicon layer；9th, glue-line is inverted.
Embodiment
The present invention is further illustrated below in conjunction with the accompanying drawings.Embodiments of the present invention include but is not limited to following reality
Apply example.
Embodiment
As shown in figure 4, a kind of cavity type FBAR, including set gradually from the bottom up substrate 1, isolation
Layer 2, supporting layer 4, bottom electrode layer 5, piezoelectric layer 6 and top electrode layer 7, depression forms groove to the upper surface middle part of separation layer 2 downwards, props up
Support layer 4 and substrate 1 close groove to form closed cavity 3, and the height of the lower surface of closed cavity 3 is less than the upper surface of substrate 1
Highly, and the lower surface of the closed cavity 3 is burnishing surface；The piezoelectric layer 6 is arranged on the upper end of supporting layer 4, the bottom electrode layer 5
It is arranged in the middle part of the lower end of piezoelectric layer 6, and the lower surface of bottom electrode layer 5 is arranged on supporting layer 4, the top electrode layer 7 is arranged on pressure
The upper center of electric layer 6；The following table area of the piezoelectric layer 6 is more than the top surface area of groove；Described piezoelectric layer 6 is with C axles
The aln layer of orientation；The substrate 1 is silicon substrate；The separation layer 2 is thermal oxide SiO2Layer；The material of supporting layer 4 is
SiC；The thickness of supporting layer 4 is 50nm；The bottom electrode layer 5 and the material of top electrode layer 7 are the metal with acoustic impedance.
The present embodiment forms groove by setting separation layer 2 on substrate 1, and the supporting layer 4 for recycling SiC to form will
Into closed cavity 3, SiC heat transfers rate is high, thermal coefficient of expansion is small, effectively can distribute heat, subtract for groove closing
The hot steady temperature of gadget, device heat endurance is improved, SiC hardness is big, can effectively support whole device architecture, carry
The overall mechanical strength of high device；The height of the lower surface of closed cavity 3 is less than the height of the upper surface of substrate 1, and the closing simultaneously
The lower surface of cavity 3 is burnishing surface, and its inner structure is stable under the effect of supporting layer 4, and closed cavity 3 will not with the edge of supporting layer 4
It is broken, so as to improve power capacity.
Based on above content, the present embodiment also discloses a kind of preparation method of cavity type FBAR, should
Method comprises the following steps：
S1 makes groove profile by lithography on substrate 1, etches formation on substrate using dry etching or wet-etching technology
Pre-groove；
After the completion of S2 etchings, aoxidize to form separation layer 2 using wet-oxygen oxidation technique on substrate 1；
S3 makes groove by lithography using reversion glue photoetching process, and deposits one layer of amorphous silicon layer 8 using magnetron sputtering technique, non-
The thickness of crystal silicon layer 8 is higher than the depth of groove, after the completion of deposition, is removed using acetone soln stripping technology unnecessary non-outside groove
Crystal silicon layer, then grinding make it that amorphous silicon layer 8 flushes with separation layer 2 in groove；
S4 deposits one layer of supporting layer 4 in the upper surface of separation layer 2 using magnetron sputtering technique；
S5 is deposited using magnetron sputtering technique or electron beam evaporation process in the upper surface of supporting layer 4 and is etched bottom electricity
Pole layer 5；
S6 is deposited by magnetron sputtering technique on bottom electrode layer 5 and is made piezoelectric layer 6 by lithography, the following table area of piezoelectric layer 6
More than the top surface area of groove；
S7 is deposited using magnetron sputtering technique or electron beam evaporation process in the upper surface of piezoelectric layer 6 and is etched top electrode layer
7；
The non-crystalline silicon of amorphous silicon layer forms closed cavity 3 and dried in S8 release grooves, completes to prepare.
In the step S7, while piezoelectric layer 6 are made by lithography, etched simultaneously between groove and bottom electrode layer 5
The release micropore of non-crystalline silicon is discharged, release micropore runs through supporting layer 4 and piezoelectric layer 6 vertically.
This method using inverts glue photoetching process the upper end of separation layer 2 formed with one layer reversion glue-line 9, then reversion glue and
Set amorphous silicon layer 8 to be used as sacrifice layer in groove, removed unnecessary amorphous silicon layer 8 using acetone soln and laser lift-off,
So as to effectively control the thickness of amorphous silicon layer 8, the unnecessary amorphous silicon layer 8 that groove is protruded after removal will be seldom, subsequently grinds
Can be more time saving and energy saving during mill, and will be smaller relative to the requirement of milling apparatus, processing cost, difficulty are reduced on the whole
And the time.
It is better understood from and implements for the present invention, the present invention is described further with reference to specific data.
Specific embodiment
As shown in figure 4, a kind of cavity type FBAR, including set gradually from the bottom up substrate 1, isolation
Layer 2, supporting layer 4, bottom electrode layer 5, piezoelectric layer 6 and top electrode layer 7, depression forms groove to the upper surface middle part of separation layer 2 downwards, props up
Support layer 4 and substrate 1 close groove to form closed cavity 3, and the height of the lower surface of closed cavity 3 is less than the upper surface of substrate 1
Highly, and the lower surface of the closed cavity 3 is burnishing surface；The piezoelectric layer 6 is arranged on the upper end of supporting layer 4, the bottom electrode layer 5
It is arranged in the middle part of the lower end of piezoelectric layer 6, and the lower surface of bottom electrode layer 5 is arranged on supporting layer 4, the top electrode layer 7 is arranged on pressure
The upper center of electric layer 6；The following table area of the piezoelectric layer 6 is more than the top surface area of groove；Described piezoelectric layer 6 is with C axles
The aln layer of orientation；The separation layer 2 is thermal oxide SiO2Layer；The material of supporting layer 4 is SiC；The thickness of supporting layer 4
For 50nm；The bottom electrode layer 5 and the material of top electrode layer 7 are the metal with acoustic impedance.
Wherein, the material of the substrate 1 is silicon, and the material of separation layer 2 is silica, and the material of supporting layer 4 is carborundum, recessed
Groove depth is 2 μm, and the material of bottom electrode layer 5 and top electrode layer 7 is Jin Shu Molybdenum or tungsten.
The preparation method of above-mentioned cavity type FBAR is as follows, comprises the following steps：
S1 makes groove profile by lithography on a silicon substrate, etches formation on substrate using dry etching or wet-etching technology
Pre-groove.In the method that surface of silicon uses photoetching, remove groove part photoresist first with reversion glue, expose concave part
Divide silicon substrate, the part then exposed using the method etching of reaction ion deep etching, control etch period, depth of groove is existed
2um or so, groove area are 200um × 200um, are taken as shown in figure 5, surface of silicon can be (100), (110) or (111)
To.
After the completion of S2 etchings, aoxidize to form the thick SiO of 200nm on a silicon substrate using wet-oxygen oxidation technique2Separation layer, such as
Shown in Fig. 6.
S3 makes groove by lithography using reversion glue photoetching process, and deposits one layer of amorphous silicon layer using magnetron sputtering technique, non-
Crystal silicon layer thickness is higher than the depth of groove, after the completion of deposition, is removed using acetone soln stripping technology unnecessary non-outside groove
Crystal silicon layer, then grinding cause amorphous silicon layer and SiO in groove2Separation layer flushes.Using inverting glue photoetching process in SiO2Isolation
Layer upper end forms reversion glue-line 9, and makes groove by lithography, as shown in Figure 7；Using one layer of non-crystalline silicon of magnetron sputtering deposition, thickness is about
For 2.3um, slightly above sacrifice layer groove depth, as shown in Figure 8；Acetone soln stripping technology (lift-off) is recycled by position
In SiO2The non-crystalline silicon of separation layer upper end removes, as shown in Figure 9；Finally ground using CMP tool, make in groove non-crystalline silicon with
SiO2Separation layer upper end is equally flat, as shown in Figure 10.
S4 is in SiO2Separation layer upper surface deposits one layer of supporting layer 4 using magnetron sputtering technique.In SiO2Separation layer upper surface
The SiC that a layer thickness is 50nm is deposited using the method for magnetron sputtering, be supported layer 4, as shown in figure 11.
S5 is deposited using magnetron sputtering technique or electron beam evaporation process in the upper surface of supporting layer 4 and is etched bottom electricity
Pole layer 5.The method that magnetron sputtering is used on supporting layer 4, deposits one layer of 100-200nm metal molybdenum, and passes through litho pattern
Change obtains hearth electrode shape as bottom electrode layer 5, and as shown in figure 12, the process conditions of wherein deposited metal molybdenum are：Air pressure 1Pa,
Power 200W, gas flow 20sccm, silicon substrate temperature are water cooling.
S6 is deposited by magnetron sputtering technique on bottom electrode layer 5 and is made piezoelectric layer 6 by lithography, the following table area of piezoelectric layer 6
More than the top surface area of groove；It is same to use magnetically controlled sputter method, one layer of AlN (aluminium nitride) layer with C axis oriented of deposition, lead to
Cross photolithography patterning and obtain piezoelectric layer 6, and exposed portion hearth electrode figure, as shown in figure 13.The process conditions of depositing Al N layers are
Nitrogen gas concn>40%, power density>10w/cm2, temperature>150℃.
S7 is deposited using magnetron sputtering technique or electron beam evaporation process in the upper surface of piezoelectric layer 6 and is etched top electrode layer
7.One layer of 100-200nm metal molybdenum is deposited using the method for magnetron sputtering, and top electrode layer 7 is obtained by photolithography patterning,
As shown in figure 14, wherein process conditions are identical with preparing for step S5 bottom electrode layers 5.
The non-crystalline silicon of amorphous silicon layer 8 forms closed cavity 3 and dried in S8 release grooves, completes to prepare.Utilize XeF2Release
The amorphous silicon layer 8 in groove is put, cavity 3 is obtained and dries, as shown in Figure 4.
In the step S6, while piezoelectric layer 6 are made by lithography, etched simultaneously between groove and bottom electrode layer 5
The release micropore of non-crystalline silicon is discharged, release micropore runs through supporting layer 4 and piezoelectric layer 6 vertically.Non-crystalline silicon is in XeF2From releasing under effect
Micropore discharge is put so as to obtain closed cavity 3, technique is simple and convenient.
It is embodiments of the invention as described above.Each preferred embodiment described previously for the present invention, it is each preferred
Preferred embodiment in embodiment if not obvious contradictory or premised on a certain preferred embodiment, it is each preferably
Embodiment arbitrarily stack combinations can use, and the design parameter in the embodiment and embodiment is merely to understand table
The invention verification process of inventor is stated, and is not used to the scope of patent protection of the limitation present invention, scope of patent protection of the invention
Still it is defined by its claims, the equivalent structure change that every specification and accompanying drawing content with the present invention is made, together
Reason should be included within the scope of the present invention.
Claims (9)
1. a kind of cavity type FBAR, including set gradually from the bottom up substrate (1), separation layer (2), support
Layer (4), bottom electrode layer (5), piezoelectric layer (6) and top electrode layer (7), it is characterised in that
Depression forms groove to separation layer (2) upper surface middle part downwards, and supporting layer (4) and substrate (1) close groove to form closing
Cavity (3), the height of closed cavity (3) lower surface are less than the height of substrate (1) upper surface, and under the closed cavity (3)
Surface is burnishing surface；
Supporting layer (4) material is SiC.
A kind of 2. cavity type FBAR according to claim 1, it is characterised in that the piezoelectric layer (6)
Supporting layer (4) upper end is arranged on, the bottom electrode layer (5) is arranged in the middle part of piezoelectric layer (6) lower end, and bottom electrode layer (5) lower end
Face is arranged on supporting layer (4), and the top electrode layer (7) is arranged on piezoelectric layer (6) upper center；Under the piezoelectric layer (6)
Surface area is more than the top surface area of groove.
A kind of 3. cavity type FBAR according to claim 1, it is characterised in that described piezoelectric layer
(6) it is the aln layer with C axis oriented.
4. a kind of cavity type FBAR according to claim 1, it is characterised in that the substrate (1) is
Silicon substrate.
A kind of 5. cavity type FBAR according to claim 1, it is characterised in that the separation layer (2)
For thermal oxide SiO2Layer.
A kind of 6. cavity type FBAR according to claim 1, it is characterised in that the supporting layer (4)
Thickness is 50nm.
A kind of 7. cavity type FBAR according to claim 1, it is characterised in that the bottom electrode layer
(5) and the material of top electrode layer (7) is the metal with acoustic impedance.
8. a kind of preparation method of cavity type FBAR, it is characterised in that this method comprises the following steps：
S1 makes groove profile by lithography on substrate (1), and formation is etched in advance on substrate using dry etching or wet-etching technology
If groove；
After the completion of S2 etchings, aoxidize to form separation layer (2) using wet-oxygen oxidation technique on substrate (1)；
S3 makes groove by lithography using reversion glue photoetching process, and deposits one layer of amorphous silicon layer (8), amorphous using magnetron sputtering technique
Silicon layer (8) thickness is higher than the depth of groove, after the completion of deposition, is removed using acetone soln stripping technology unnecessary non-outside groove
Crystal silicon layer (8), then grinding make it that amorphous silicon layer flushes with separation layer (2) in groove；
S4 deposits one layer of supporting layer (4) in separation layer (2) upper surface using magnetron sputtering technique；
S5 is deposited using magnetron sputtering technique or electron beam evaporation process in the upper surface of supporting layer (4) and is etched hearth electrode
Layer (5)；
S6 is deposited by magnetron sputtering technique on bottom electrode layer (5) and is made piezoelectric layer (6) by lithography, piezoelectric layer (6) lower surface
Top surface area of the product more than groove；
S7 is deposited using magnetron sputtering technique or electron beam evaporation process in piezoelectric layer (6) upper surface and is etched top electrode layer
(7)；
The non-crystalline silicon of amorphous silicon layer (8) forms closed cavity (3) and dried in S8 release grooves, completes to prepare.
9. preparation method according to claim 8, it is characterised in that in the step S6, making piezoelectric layer (6) by lithography
Meanwhile etching the release micropore of release non-crystalline silicon simultaneously between groove and bottom electrode layer (5), release micropore runs through vertically
Supporting layer (4) and piezoelectric layer (6).
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