CN109474252B - Cavity film bulk acoustic resonator capable of improving Q value and preparation method thereof - Google Patents
Cavity film bulk acoustic resonator capable of improving Q value and preparation method thereof Download PDFInfo
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- CN109474252B CN109474252B CN201811271504.1A CN201811271504A CN109474252B CN 109474252 B CN109474252 B CN 109474252B CN 201811271504 A CN201811271504 A CN 201811271504A CN 109474252 B CN109474252 B CN 109474252B
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000010408 film Substances 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 42
- 239000010432 diamond Substances 0.000 claims abstract description 42
- 239000010409 thin film Substances 0.000 claims abstract description 34
- 230000010355 oscillation Effects 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 238000003780 insertion Methods 0.000 abstract description 3
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- 238000013017 mechanical damping Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 239000000463 material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
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- 230000005540 biological transmission Effects 0.000 description 1
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- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
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- 238000011160 research Methods 0.000 description 1
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- 238000010897 surface acoustic wave method Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0407—Temperature coefficient
Abstract
The invention provides a cavity film bulk acoustic resonator capable of improving a Q value and a preparation method thereof. The invention provides a cavity film bulk acoustic resonator capable of improving Q value, which is characterized by comprising the following components: a substrate, the middle part of which is provided with a groove which is opened upwards; the SiC/Diamond thin film layer is formed on the substrate, and the middle part of the SiC/Diamond thin film layer is provided with a through hole corresponding to the groove; and the piezoelectric oscillation stack part is formed on the SiC/Diamond thin film layer and is positioned right above the through hole, and sequentially comprises the following components from bottom to top: a bottom electrode, a piezoelectric layer, and a top electrode. The invention utilizes the characteristics of high sound wave propagation rate and high hardness of the SiC/Diamond film layer, can well inhibit the sound wave of a transverse vibration mode generated in the piezoelectric film, can reduce the mechanical damping introduced by the soft substrate, reduce the energy loss of the sound wave, reduce the insertion loss of the film bulk acoustic resonator, and obtain high Q value and electromechanical coupling coefficient.
Description
Technical Field
The invention belongs to the field of sensor preparation, and particularly relates to a cavity film bulk acoustic resonator capable of improving a Q value and a preparation method thereof.
Technical Field
With the rapid development of wireless communication, wireless signals become more and more crowded, and new requirements of integration, miniaturization, low power consumption, high performance, low cost and the like are provided for a filter working in a radio frequency band. The traditional surface acoustic wave filter can not reach the technical indexes due to the limitation of frequency, bearing power and the like. Film Bulk Acoustic Resonators (FBARs) are becoming the focus of research in radio frequency filters due to their CMOS process compatibility, high quality factor (Q value), low loss, low temperature coefficient, and high power carrying capability.
Film Bulk Acoustic Wave resonators (FBARs) can be classified into air gap type, silicon back-etched type, and solid package type. The cavity type FBAR has a slightly higher Q value compared with a solid packaging type FBAR, the loss is small, and the electromechanical coupling coefficient is slightly higher; compared with the silicon back-etched FBAR, the mechanical stability and mechanical strength are good because the cavity type does not require removal of a large area of the substrate. The cavity-type FBAR is generally made of an electrode-piezoelectric film-electrode sandwich structure on a substrate silicon, and an air gap is etched between the upper surface of the substrate silicon and the lower surface of a lower electrode to form an air interface, which can confine acoustic energy in an FBAR substrate, thereby reducing the loss of the acoustic energy.
The principle of the film bulk acoustic resonator is that a piezoelectric effect of a piezoelectric film is utilized, an electric signal is applied between an upper electrode and a lower electrode, the piezoelectric effect of the piezoelectric film can generate an acoustic signal, the acoustic signal oscillates between the electrodes, the acoustic wave is divided into a thickness vibration mode and a transverse vibration mode, wherein the acoustic wave is reserved only in the thickness vibration mode meeting the total reflection condition of the acoustic wave, the acoustic wave in the transverse vibration mode is consumed, the reserved acoustic signal is converted into the electric signal to be output, and therefore frequency selection of the electric signal is achieved. The acoustic wave in the transverse vibration mode causes the loss of acoustic wave energy, reduces the energy conversion efficiency, increases the insertion loss of the FBAR, and reduces the Q value of a quality factor.
Disclosure of Invention
The present invention has been made to solve the above problems, and an object of the present invention is to provide a cavity thin film bulk acoustic resonator capable of improving a Q value and a method for manufacturing the same.
In order to achieve the purpose, the invention adopts the following scheme:
< resonator >
The invention provides a cavity film bulk acoustic resonator capable of improving Q value, which is characterized by comprising the following components: a substrate, the middle part of which is provided with a groove which is opened upwards; the SiC/Diamond thin film layer is formed on the substrate, and the middle part of the SiC/Diamond thin film layer is provided with a through hole corresponding to the groove; and the piezoelectric oscillation stack part is formed on the SiC/Diamond thin film layer and is positioned right above the through hole, and sequentially comprises the following components from bottom to top: a bottom electrode, a piezoelectric layer, and a top electrode.
Preferably, the cavity film bulk acoustic resonator capable of improving the Q value provided by the invention can also have the following characteristics: the substrate is a silicon or sapphire substrate.
Preferably, the cavity film bulk acoustic resonator capable of improving the Q value provided by the invention can also have the following characteristics: the bottom electrode and the top electrode are both metal films, and the metal films are any one of molybdenum films, platinum films, gold films, silver films and tungsten films.
Preferably, the cavity film bulk acoustic resonator capable of improving the Q value provided by the invention can also have the following characteristics: the piezoelectric layer is made of any one of AlN, ZnO and PZT piezoelectric films with C-axis orientation.
< preparation method >
Further, the present invention provides a method for manufacturing a cavity film bulk acoustic resonator capable of improving a Q value, which is characterized in that: the cavity film bulk acoustic resonator capable of improving the Q value described in the < resonator > above is prepared.
Preferably, the method for preparing the cavity film bulk acoustic resonator capable of improving the Q value provided by the invention comprises the following steps: step 1, depositing a SiC/Diamond thin film layer on a substrate; step 2, etching a preset through hole on the SiC/Diamond thin film layer; step 3, etching a preset groove on the substrate, wherein the size of the groove corresponds to that of the through hole; step 4, depositing a sacrificial layer on the SiC/Diamond thin film layer, wherein the chemical property of the material of the sacrificial layer is different from that of the substrate, so that the substrate is not affected during subsequent corrosion; step 5, removing the redundant sacrificial layer material by using a chemical mechanical polishing technology, so that the groove and the through hole are just filled with the sacrificial layer material; step 6, sequentially depositing a bottom electrode, a piezoelectric film and a top electrode on the SiC/Diamond thin film layer and the sacrificial layer to form a piezoelectric oscillation stack part; step 7, patterning the bottom electrode/the piezoelectric layer/the top electrode to reduce the pseudo mode vibration; step 8, etching release holes on the piezoelectric stack structure; and 9, introducing an etchant through the release hole, and etching off only the sacrificial layer to form a cavity in the substrate, the SiC/Diamond thin film layer and the piezoelectric oscillation stack part.
Preferably, the method for preparing the cavity film bulk acoustic resonator capable of improving the Q value provided by the invention can also have the following characteristics: in step 7, the bottom electrode/piezoelectric layer/top electrode is patterned into a polygon or circle.
Action and Effect of the invention
The cavity film bulk acoustic resonator capable of improving the Q value provided by the invention utilizes the characteristics of high transmission rate and high hardness of the SiC/Diamond film layer acoustic wave, can well inhibit the acoustic wave of a transverse vibration mode generated in the piezoelectric film, can reduce the mechanical damping introduced by the soft substrate, reduces the acoustic wave energy loss, reduces the insertion loss of the film bulk acoustic resonator, and obtains high Q value and electromechanical coupling coefficient. Moreover, when the SiC/Diamond film is used as the SiC/Diamond film layer, the thermal conductivity (40W/(m.k)) of the SiC/Diamond film is three times that of silicon, and the SiC/Diamond film is deposited between the bottom electrode and the silicon substrate, so that the temperature of the interconnection node of the FBAR can be increased, the heat dissipation is accelerated, the overheating phenomenon of the cavity type FBAR is relieved, and the thermal stress of the piezoelectric layer and the electrode and the frequency drift caused by the thermal stress are reduced.
Drawings
Fig. 1 is a sectional view (a) and a top view (b) of a cavity film bulk acoustic resonator capable of improving a Q value according to a first embodiment of the present invention;
fig. 2 is a sectional view (a) and a top view (b) of a cavity film bulk acoustic resonator capable of improving a Q value according to a second embodiment of the present invention;
FIG. 3 is a cross-sectional view (a) and a top view (b) of a silicon substrate according to a third embodiment of the present invention;
FIG. 4 is a cross-sectional view (a) and a top view (b) of a SiC/Diamond thin film layer grown in a third embodiment of the present invention;
fig. 5 is a cross-sectional view (a) and a top view (b) of a SiC/Diamond layer etched with a through-hole by an ICP process according to a third embodiment of the present invention;
FIG. 6 is a cross-sectional view (a) and a top view (b) of a silicon substrate after a trench is etched in accordance with a third embodiment of the present invention;
FIG. 7 is a cross-sectional view (a) and a top view (b) of a third embodiment of the present invention after a sacrificial layer is deposited;
FIG. 8 is a cross-sectional view (a) and a top view (b) of a third embodiment of the present invention after polishing a sacrificial layer by CMP;
FIG. 9 is a cross-sectional view (a) and a top view (b) of a bottom electrode metal film deposited according to a third embodiment of the present invention;
FIG. 10 is a cross-sectional view (a) and a top view (b) of a deposited AlN piezoelectric film according to a third embodiment of the present invention;
FIG. 11 is a cross-sectional view (a) and a top view (b) after depositing a top electrode film according to a third embodiment of the present invention;
fig. 12 is a cross-sectional view (a) and a top view (b) of a piezoelectric oscillator stack portion patterned into a hexagonal shape according to a third embodiment of the present invention;
FIG. 13 is a cross-sectional view (a) and a top view (b) of a third embodiment of the present invention after etching a release hole.
Detailed Description
The following describes in detail specific embodiments of the cavity film bulk acoustic resonator and the method for manufacturing the same according to the present invention with reference to the accompanying drawings.
< example one >
As shown in fig. 1, a cavity film bulk acoustic resonator 10 capable of improving Q value provided in the first embodiment includes a substrate 11, a SiC/Diamond film layer 12, and a piezoelectric resonator stack portion 13. The substrate 11 has a recess opened upward in the middle. The SiC/Diamond thin film layer 12 is formed on the substrate, a through hole corresponding to the groove is formed in the middle of the SiC/Diamond thin film layer, and the size of the through hole is consistent with that of the groove. The piezoelectric oscillation stack part 13 is formed on the SiC/Diamond thin film layer 12 and is positioned right above the through hole; piezoelectric oscillation pile part 13 includes from supreme down in proper order: a bottom electrode 13a, a piezoelectric layer 13b, and a top electrode 13 c. The recess on the substrate 11, the through-hole on the SiC/Diamond thin film layer 12, and the piezoelectric oscillator stack portion 13 together enclose a cavity 14. Four release holes 15 are uniformly formed in the piezoelectric oscillating stack portion 13, and the release holes 15 are provided for preparing the cavity 14, which will be described in the third embodiment.
As shown in fig. 1(a), in the first embodiment, the patterned piezoelectric oscillator stack portion 13 is a regular hexagon.
< example two >
As shown in fig. 2, the cavity film bulk acoustic resonator 20 capable of improving the Q value provided in the second embodiment includes a substrate 21, a SiC/Diamond film layer 22, and a piezoelectric oscillator stack portion 23. The substrate 21 has a recess opened upward in the middle. The SiC/Diamond thin film layer 22 is formed on the substrate, a through hole corresponding to the groove is formed in the middle of the SiC/Diamond thin film layer, and the size of the through hole is consistent with that of the groove. The piezoelectric oscillation stack part 23 is formed on the SiC/Diamond thin film layer 22 and is positioned right above the through hole; piezoelectric oscillation pile part 23 includes from bottom to top in proper order: a bottom electrode 23a, a piezoelectric layer 23b, and a top electrode 23 c. The recess on the substrate 21, the through-hole on the SiC/Diamond thin film layer 22, and the piezoelectric oscillator stack portion 23 together enclose a cavity 24. Four release holes 25 are uniformly formed on the piezoelectric oscillating stack portion 23, and the release holes 25 are provided for preparing the cavity 24.
As shown in fig. 2(a), in the second embodiment, the patterned piezoelectric oscillator unit 13 is circular.
< example three >
The third embodiment provides a method for manufacturing a cavity film bulk acoustic resonator capable of improving a Q value, where the resonator in the first embodiment is taken as an example for description, and the method specifically includes the following steps:
1) as shown in fig. 3, a silicon substrate 11 is prepared;
2) as shown in fig. 4, a SiC/Diamond thin film layer 12 is grown on a silicon substrate 11;
3) as shown in fig. 5, a predetermined through hole 12a is etched in the SiC/Diamond thin film layer 12:
4) as shown in fig. 6, a predetermined groove 11a is etched on the silicon substrate 11;
5) as shown in fig. 7, a sacrificial layer a is deposited on the SiC/Diamond thin film layer 12 and in the groove 11a, and the chemical property of the material of the sacrificial layer a is different from that of the silicon substrate 11, so as to ensure that the substrate is not affected during subsequent etching;
6) as shown in fig. 8, the excess sacrificial layer a material is removed by using a chemical mechanical polishing technique, so that the sacrificial layer a material just fills the grooves 11a and the through holes 12a on the silicon substrate 11 and the SiC/Diamond thin film layer 12;
7) as shown in fig. 9 to 11, a bottom electrode 13a, a piezoelectric film 13b and a top electrode 13c are sequentially deposited on the SiC/Diamond thin film layer 12 and the sacrificial layer a to form a piezoelectric oscillation stack part 13;
8) as shown in fig. 12, the piezoelectric oscillator stack portion 13 is patterned into a hexagon;
9) as shown in fig. 13, a release hole 15 is etched on the piezoelectric oscillation stack portion 13;
10) as shown in fig. 1, the sacrificial layer a is completely etched away by introducing an etchant or an etchant gas through the release holes, thereby forming the cavity 14.
The above embodiments are merely illustrative of the technical solutions of the present invention. The cavity film bulk acoustic resonator and the method for manufacturing the same according to the present invention are not limited to the description of the embodiments above, but the scope of the invention is defined by the claims. Any modification or supplement or equivalent replacement made by a person skilled in the art on the basis of this embodiment is within the scope of the invention as claimed in the claims.
Claims (5)
1. A cavity film bulk acoustic resonator capable of improving Q value, comprising:
a substrate, the middle part of which is provided with a groove which is opened upwards;
the SiC/Diamond thin film layer is formed on the substrate, and the middle part of the SiC/Diamond thin film layer is provided with a through hole corresponding to the groove; and
piezoelectric oscillation pile portion, form on the SiC/Diamond thin film layer to be located directly over the through-hole, from supreme down include in proper order: a bottom electrode, a piezoelectric layer, and a top electrode,
wherein the bottom electrode/the piezoelectric layer/the top electrode are patterned into a polygon or a circle, and the size of the through opening is consistent with that of the groove.
2. The improved Q-factor cavity film bulk acoustic resonator of claim 1, wherein:
wherein the substrate is a silicon or sapphire substrate.
3. The improved Q-factor cavity film bulk acoustic resonator of claim 1, wherein:
the bottom electrode and the top electrode are both metal films, and the metal films are any one of molybdenum films, platinum films, gold films, silver films and tungsten films.
4. The improved Q-factor cavity film bulk acoustic resonator of claim 1, wherein:
wherein, the piezoelectric layer adopts any one of AlN, ZnO and PZT piezoelectric films with C-axis orientation.
5. The method for manufacturing a cavity film bulk acoustic resonator capable of improving a Q-value according to any one of claims 1 to 4, comprising the steps of:
step 1, depositing a SiC/Diamond thin film layer on a substrate;
step 2, etching a preset through hole on the SiC/Diamond thin film layer;
step 3, etching a preset groove on the substrate, wherein the size of the groove corresponds to that of the through hole;
step 4, depositing a sacrificial layer on the SiC/Diamond thin film layer, wherein the chemical property of the sacrificial layer is different from that of the substrate, and the subsequent corrosion is guaranteed without influencing the substrate;
step 5, removing the redundant sacrificial layer by using a chemical mechanical polishing technology, so that the sacrificial layer just fills the groove and the through hole;
step 6, sequentially depositing a bottom electrode, a piezoelectric film and a top electrode on the SiC/Diamond thin film layer and the sacrificial layer to form a piezoelectric oscillation stack part;
step 7, patterning the bottom electrode/the piezoelectric layer/the top electrode;
step 8, etching a release hole on the piezoelectric oscillation stack part;
step 9, introducing an etchant through the release hole, etching off only the sacrificial layer, forming a cavity in the substrate, the SiC/Diamond thin film layer and the piezoelectric oscillation stack part,
wherein, in step 7, the bottom electrode/the piezoelectric layer/the top electrode is patterned into a polygon or a circle.
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| CN110113022B (en) * | 2019-05-13 | 2023-09-26 | 南方科技大学 | Film bulk acoustic resonator and manufacturing method thereof |
| CN110602616B (en) * | 2019-08-28 | 2021-02-19 | 武汉敏声新技术有限公司 | High-sensitivity MEMS piezoelectric microphone |
| WO2021036653A1 (en) | 2019-08-28 | 2021-03-04 | 武汉大学 | High-sensitivity piezoelectric microphone |
| CN110417375A (en) * | 2019-08-30 | 2019-11-05 | 迈感微电子(上海)有限公司 | A kind of bulk acoustic wave resonator |
| CN110784188B (en) * | 2019-10-17 | 2022-09-09 | 武汉敏声新技术有限公司 | Resonator and preparation method thereof |
| CN111092604B (en) * | 2019-12-16 | 2021-07-20 | 见闻录(浙江)半导体有限公司 | Cavity structure of bulk acoustic wave resonator and manufacturing method |
| CN112994639A (en) * | 2019-12-16 | 2021-06-18 | 中芯集成电路（宁波）有限公司 | Thin-film piezoelectric acoustic wave resonator, manufacturing method thereof and filter |
| CN111010127B (en) * | 2019-12-23 | 2021-07-02 | 武汉大学 | Film bulk acoustic resonator and preparation method thereof |
| CN111224637A (en) * | 2020-01-21 | 2020-06-02 | 武汉大学 | Resonator with novel release structure and preparation method thereof |
| CN111262542B (en) * | 2020-02-27 | 2022-03-25 | 见闻录(浙江)半导体有限公司 | Bulk acoustic wave resonator with heat dissipation structure and manufacturing process |
| CN111654259A (en) * | 2020-05-13 | 2020-09-11 | 深圳市信维通信股份有限公司 | Bulk acoustic wave resonance device, filtering device and radio frequency front end device |
| CN112087216B (en) * | 2020-08-03 | 2022-02-22 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with acoustic hole, assembly, filter and electronic device |
| WO2022192666A1 (en) * | 2021-03-12 | 2022-09-15 | Akash Systems, Inc. | Substrate features in thermally conductive materials |
| CN114389562A (en) * | 2021-12-29 | 2022-04-22 | 河源市艾佛光通科技有限公司 | Bulk acoustic wave resonator capable of improving power capacity and preparation method thereof |
| CN116248062B (en) * | 2023-01-10 | 2024-04-02 | 武汉敏声新技术有限公司 | Bulk acoustic wave resonator and preparation method thereof |
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