CN109905098A - A kind of thin film bulk acoustic wave resonator and preparation method - Google Patents
A kind of thin film bulk acoustic wave resonator and preparation method Download PDFInfo
- Publication number
- CN109905098A CN109905098A CN201910181632.5A CN201910181632A CN109905098A CN 109905098 A CN109905098 A CN 109905098A CN 201910181632 A CN201910181632 A CN 201910181632A CN 109905098 A CN109905098 A CN 109905098A
- Authority
- CN
- China
- Prior art keywords
- layer
- thickness
- molybdenum
- aluminium nitride
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000010410 layer Substances 0.000 claims abstract description 200
- 229910017083 AlN Inorganic materials 0.000 claims abstract description 54
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims abstract description 54
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000011733 molybdenum Substances 0.000 claims abstract description 47
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 47
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 238000000926 separation method Methods 0.000 claims abstract description 32
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 26
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 23
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 23
- 239000011241 protective layer Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000012545 processing Methods 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- 239000004411 aluminium Substances 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 238000001259 photo etching Methods 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 12
- 230000026267 regulation of growth Effects 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 6
- FHNFHKCVQCLJFQ-NJFSPNSNSA-N Xenon-133 Chemical class [133Xe] FHNFHKCVQCLJFQ-NJFSPNSNSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 230000003746 surface roughness Effects 0.000 claims description 4
- JMFBOACKZQRCDA-UHFFFAOYSA-N molybdenum scandium Chemical compound [Sc][Mo] JMFBOACKZQRCDA-UHFFFAOYSA-N 0.000 claims 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 15
- 230000007423 decrease Effects 0.000 abstract description 5
- 150000004767 nitrides Chemical class 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 3
- 239000002355 dual-layer Substances 0.000 abstract 1
- 238000004891 communication Methods 0.000 description 8
- 239000012528 membrane Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010295 mobile communication Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- -1 scandium aluminum Chemical compound 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000010358 mechanical oscillation Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Abstract
The present invention provides a kind of thin film bulk acoustic wave resonator and preparation method; the thin film bulk acoustic wave resonator successively includes High Resistivity Si piece substrate from top to bottom; high-temperature oxydation silica separation layer; first aln seed layer; molybdenum lower electrode layer, the second aln seed layer adulterate the aluminium nitride piezoelectric layer of scandium; molybdenum upper electrode layer, aluminium nitride protective layer；Dual layer nitride aluminium seed layer of the invention can be such that the matching degree between separation layer and lower electrode molybdenum, between the aluminium nitride and lower electrode molybdenum of piezoelectric layer doping scandium improves；Aluminium nitride protective layer above top electrode, reserves certain thickness increment, for offsetting the error of film thickness growth, provides certain serious forgiveness for preparation processing；And the protective layer can also play the role of protection electrode of metal, prevent oxidation from device performance being caused to decline.
Description
Technical field
The present invention relates to the communications fields, more particularly to one kind lower than 6GHz frequency suitable for 5G (the 5th generation) mobile communication
The thin film bulk acoustic wave resonator and preparation method of section (sub 6GHz) communication.
Background technique
In recent decades, with the continuous development of the communication technology, miscellaneous wireless terminal is emerged, as information passes
The frequency spectrum resource of the explosive growth of throughput rate, occupancy is more and more, therefore, wirelessly communicates the frequency used and constantly sends out to high frequency
Exhibition.It is gradually bright and clear with 5G mobile communication technology industrialization, currently, Ministry of Industry and Information, China has put into effect for 5G communication
The frequency allocation plan of the following frequency range of sub 6GHz marks off 3300MHz-3400MHz frequency range, 3400MHz-3600MHz frequency range
With 4800MHz-5000MHz frequency range.Frequency compared to current 4G (forth generation) mobile communication no more than 2.7GHz has not small promotion,
Communication terminal also in multifunction, everything all to the final element for being applied to 5G communication propose higher performance, more low-loss,
The comprehensive test such as smaller volume.And traditional dielectric filter progressively disengages final element due to the relationship of bulky
Application among, and at present compared with the SAW filter of mainstream (SAW) when frequency rises to 2GHz or more, insertion loss is huge
Greatly, it is difficult to meet the needs that communication system develops high frequency.And thin film bulk acoustic wave resonator (FBAR) technology not only working frequency
It is significantly increased with the SAW filter in quality factor compared with mainstream, and also possesses that stability is good, small in size, high reliablity, energy
With complementary metal oxide semiconductor (CMOS) process compatible and can realize integrated advantage on the ic chip, complied with 5G communication
The general trend of events of development.
The basic principle of FBAR is mechanical energy based on piezoelectric material and electric energy conversion, and the electromechanical coupling of piezoelectric material
Several sizes represents the power of this transfer capability, and directly affects the overall performance of device, therefore, selects suitable piezoelectricity
Material be in weight in FBAR research field among.The working frequency of FBAR and the sound wave that piezoelectric material mechanical oscillation generate are direct
Correlation, transmission speed of the sound wave in FBAR is faster, under same thickness, can reach higher working frequency, it may be said that
The longitudinal wave velocity of selected material is one of the problem of needing overriding concern.Aluminium nitride is indulged compared to the piezoelectric material of other mainstreams
Wave sound speed is very fast, meets the trend of device miniaturization and high frequency, also, he is low there are also difficulty is prepared, and property is stablized, with
And the ideal material of integrated processing is still carried out with cmos device.Therefore, aluminium nitride is current most widely used piezoelectric material.
Although the piezoelectric membrane that aluminium nitride is constituted has been sufficient for the needs developed at present, due to the function of FBAR device
Energy property is directly related with piezoelectric layer, how further to promote the working performance of FBAR filter and reduces preparation process difficulty, at
For current problem in urgent need to solve.In addition, traditional FBAR device lacks the protection to electrode, this causes device using
Be oxidized in journey and performance decline the problem of.
Summary of the invention
The present invention is further promoted to solve the above problems, propose a kind of thin film bulk acoustic wave resonator and preparation method
The working performance of thin film bulk acoustic wave resonator, and the decline of device performance caused by aoxidizing can be prevented.
According to an aspect of the present invention, a kind of thin film bulk acoustic wave resonator is provided, the thin film bulk acoustic wave resonator includes
High Resistivity Si piece substrate, the high-temperature oxydation silica separation layer formed in High Resistivity Si piece substrate, in high-temperature oxydation silica
The first aln seed layer being arranged on separation layer, the first aluminium nitride being arranged in high-temperature oxydation silica separation layer and thereon
The air chamber that seed layer is formed, the molybdenum lower electrode layer being arranged on the first aln seed layer are arranged on molybdenum lower electrode layer
Second aln seed layer, the aluminium nitride piezoelectric layer for the doping scandium being arranged on the second aln seed layer, in the nitrogen of doping scandium
Change the molybdenum upper electrode layer being arranged on aluminium piezoelectric layer.
Further, the thin film bulk acoustic wave resonator further includes the aluminium nitride protection being arranged on the molybdenum upper electrode layer
Layer.
Further, thickness of the thickness of second aln seed layer less than the first aln seed layer.
Further, the silica separation layer thickness of the high-temperature oxydation is 1 μm (1 micron), first aluminium nitride
Seed layer thickness is 100nm (100 nanometers), molybdenum lower electrode layer with a thickness of 150nm, the second aln seed layer with a thickness of 10nm,
The aluminium nitride piezoelectric layer thickness for adulterating scandium is 500nm, and molybdenum upper electrode layer is with a thickness of 150nm, aluminium nitride protective layer thickness
100nm。
According to the another aspect of invention, a kind of preparation method of thin film bulk acoustic wave resonator is provided, comprising the following steps:
Step 1, High Resistivity Si piece substrate is cleaned, etches bevelled air groove on a silicon substrate；
Step 2, in silicon chip surface by one layer of thermal oxide growth fine and close silica separation layer, the separation layer is in air
It is attached to the silicon substrate of bottom surface at slot, keeps the tank structure of recess；
Step 3, sacrificial layer amorphous silicon is grown, air groove is filled up；
Step 4, the expendable material amorphous silicon outside air groove is removed by chemically mechanical polishing, and reduces surface roughness,
It starts the cleaning processing later；
Step 5, successive one aluminum nitride seed of growth regulation of magnetron sputtering is utilized on the silica separation layer of high-temperature oxydation
Layer and molybdenum lower electrode layer, and lower electrode layer figure is etched using photoetching process；It is first using magnetron sputtering on molybdenum lower electrode layer
The aluminium nitride piezoelectric layer of the nitride aluminium seed layer of growth regulation and doping scandium afterwards；Magnetic control is utilized on the aluminium nitride piezoelectric layer of doping scandium
Sputtering growth molybdenum upper electrode layer, and successively upper electrode layer figure and piezoelectricity layer pattern are etched using photoetching process；
Step 6, sacrifice processing is carried out to amorphous silicon by being fluorinated xenon-133 gas, obtains air groove.
Further, the step 5 utilizes Grown by Magnetron Sputtering molybdenum upper electrode layer on the aluminium nitride piezoelectric layer of doping scandium, and
After successively etching upper electrode layer figure and piezoelectricity layer pattern using photoetching process, including magnetic control is utilized on molybdenum upper electrode layer
Growing aluminum nitride protective layer is sputtered, and etches protection layer pattern using photoetching process.
Further, thickness of the thickness of second aln seed layer less than the first aln seed layer.
Further, the high-temperature oxydation silica separation layer thickness is 1 μm, the first aln seed layer thickness
For 100nm, molybdenum lower electrode layer adulterates the aluminium nitride piezoelectric layer of scandium with a thickness of 150nm, the second aln seed layer with a thickness of 10nm
With a thickness of 500nm, for molybdenum upper electrode layer with a thickness of 150nm, aluminium nitride protective layer thickness is 100nm.
The beneficial effects of the present invention are, propose a kind of thin film bulk acoustic wave resonator and preparation method, separation layer with
Between lower electrode, one layer of seed layer being made of aluminium nitride of extraneous growth between piezoelectric membrane and lower electrode is adulterated, to make to hand over
Matching degree between two layers of boundary improves.One layer of aluminium nitride film of extraneous growth in top electrode, as protective layer, by setting
Timing reserves certain thickness increment, with offset growth film thickness it is relatively thin caused by frequency it is higher；And it is thrown by ion beam
Light processing, after reducing protective layer thickness, frequency be can be improved, and provide certain serious forgiveness for preparation processing；And the protective layer
It can also play the role of protection electrode of metal, prevent oxidation from device performance being caused to decline.
Detailed description of the invention
Fig. 1 is the classical cavity structure of film bulk acoustic resonator；
Fig. 2 is a kind of film bulk acoustic resonator structure figure provided in an embodiment of the present invention；
Fig. 3 is a kind of thin film bulk acoustic wave resonator preparation method flow chart provided in an embodiment of the present invention；
Fig. 4 is a kind of thin film bulk acoustic wave resonator preparation method process flow chart provided in an embodiment of the present invention.
Specific embodiment
Specific embodiment of the present invention is illustrated below, to further illustrate starting point of the invention and corresponding
Technical solution.
Fig. 1 is the classical cavity structure of film bulk acoustic resonator.The classical cavity structure of film bulk acoustic resonator FBAR from
Under to it is upper successively include substrate 101, air chamber 102, lower electrode 103, piezoelectric layer 104 and top electrode 105.
Fig. 2 is a kind of film bulk acoustic resonator structure figure provided in an embodiment of the present invention, the film bulk acoustic resonator
Device includes High Resistivity Si piece substrate 201, the silica separation layer 203 of the high-temperature oxydation formed in High Resistivity Si piece substrate 201,
The first aln seed layer 204 being arranged on high-temperature oxydation silica separation layer 203, in high-temperature oxydation silica separation layer
The air chamber 202 formed between 203 and the first aln seed layer 204 for being arranged thereon, on the first aln seed layer 204
The molybdenum lower electrode layer 205 of setting, the second aln seed layer 206 being arranged on molybdenum lower electrode layer 205, in the second aluminium nitride kind
The aluminium nitride piezoelectric layer 207 for the doping scandium being arranged in sublayer 206, on the aluminium nitride piezoelectric layer 207 of doping scandium on the molybdenum that is arranged
Electrode layer 208.
A kind of thin film bulk acoustic wave resonator provided in an embodiment of the present invention is using the aluminium nitride of doping scandium as piezoelectric layer, device
Part bandwidth is improved.The structure of thin film bulk acoustic wave resonator proposed by the present invention also can effectively play doping scandium aluminium nitride piezoelectricity
The function of film.
Preferably, the thin film bulk acoustic wave resonator further includes the aluminium nitride protective layer being arranged on the molybdenum upper electrode layer
209。
In actually preparation, the new protective layer aluminium nitride that introduces reduces frequency, prevents the mistake in material difference and actual processing
Difference causes frequency higher, improves the serious forgiveness of technique, and certain raising space is provided for frequency.Simultaneously as being powered in molybdenum
The aluminium nitride protective layer being arranged on the layer of pole can further protect electrode of metal, prevent oxidation from device performance being caused to decline.
Preferably, the thickness of second aln seed layer is answered relatively thin, and thickness can be less than the first aluminum nitride seed
The thickness of layer.
In actually preparation, when directly producing doping scandium aluminum nitride piezoelectric film directly on lower electrode molybdenum, find thin
Membrane stress and the degree of orientation are nonconforming, thus select to grow one layer of 10nm seed layer aluminium nitride work between piezoelectric layer and lower electrode
For buffering, the excessive situation of stress is alleviated, and improve the piezoelectric membrane longitudinal axis degree of orientation, so that piezoelectric layer c-axis orientation is good,
Rocking curve halfwidth can reach 1.88 °.
In addition, being isolated other than the one layer of aln seed layer 206 grown between doping piezoelectric membrane and lower electrode
Also one layer of the extraneous growth seed layer 204 being made of aluminium nitride between layer and lower electrode obtains the c-axis degree of orientation for growing film layer
Optimization, and can prevent device aoxidize and performance lower.For the performance for further promoting piezoelectric membrane, it is similarly piezoelectric material
The thickness of aln seed layer 206 should control in relatively thin range, be only used as the tune of lower electrode Yu piezoelectricity interlayer Lattice Matching
And agent.
When the thin film bulk acoustic wave resonator frequency caused by thicknesses of layers increases is declined, ion polishing nitrogen can be passed through
Change the accurately thinned protective layer film thickness of aluminium protective layer 209, to improve frequency.
Preferably, the silica separation layer thickness of the high-temperature oxydation is 1 μm, the first aln seed layer thickness
For 100nm, molybdenum lower electrode layer adulterates the aluminium nitride piezoelectric layer of scandium with a thickness of 150nm, the second aln seed layer with a thickness of 10nm
With a thickness of 500nm, for molybdenum upper electrode layer with a thickness of 150nm, aluminium nitride protective layer thickness is 100nm.
It is related with the various process parameters in actual processing to adulterate scandium aluminum nitride piezoelectric film specific performance, lacks in early period
In the case that related data accumulates, design parameter is unknown quantity.Thus using resonance of the emulation based on aluminium nitride film in advance
Device, then replaced in actually preparation using doping piezoelectric membrane, the value of parameters is determined with lesser difference range.By right
Piezoelectric layer aluminium nitride resonator carries out emulation testing, determines the one group of basic physical parameters that can obtain preferable performance of resonator
Are as follows: the silica separation layer thickness of high-temperature oxydation is 1 μm, and first aln seed layer is with a thickness of 100nm, electrode under molybdenum
For layer with a thickness of 150nm, the second aln seed layer adulterates the aluminium nitride piezoelectric layer thickness of scandium for 500nm, on molybdenum with a thickness of 10nm
Electrode layers thickness is 150nm, and aluminium nitride protective layer thickness is 100nm.
Fig. 3 is a kind of thin film bulk acoustic wave resonator preparation method flow chart provided in an embodiment of the present invention.The preparation side
Method specifically includes the following steps:
Step 1, High Resistivity Si piece substrate is cleaned, etches bevelled air groove on a silicon substrate.
Step 2, in silicon chip surface by one layer of thermal oxide growth fine and close silica separation layer, the separation layer is in air
It is attached to the silicon substrate of bottom surface at slot, keeps the tank structure of recess.
Step 3, sacrificial layer amorphous silicon is grown, air groove is filled up.
Step 4, the expendable material amorphous silicon outside air groove is removed by chemically mechanical polishing, and reduces surface roughness,
It starts the cleaning processing later.
Step 5, successive one aluminum nitride seed of growth regulation of magnetron sputtering is utilized on the silica separation layer of high-temperature oxydation
Layer and molybdenum lower electrode layer, and lower electrode layer figure is etched using photoetching process；It is first using magnetron sputtering on molybdenum lower electrode layer
The aluminium nitride piezoelectric layer of the nitride aluminium seed layer of growth regulation and doping scandium afterwards；Magnetic control is utilized on the aluminium nitride piezoelectric layer of doping scandium
Sputtering growth molybdenum upper electrode layer, and successively upper electrode layer figure and piezoelectricity layer pattern are etched using photoetching process；Wherein use
Photoetching process etching can be gluing exposure etching.
Step 6, sacrifice processing is carried out to amorphous silicon by being fluorinated xenon-133 gas, obtains air groove.
Fig. 4 is a kind of thin film bulk acoustic wave resonator preparation method process flow chart provided in an embodiment of the present invention, and step is such as
Under:
(1) high resistant silicon wafer is cleaned, etches bevelled air groove on a silicon substrate later, it is attached convenient for separation layer
Growth.
(2) in silicon chip surface by one layer of thermal oxide growth fine and close silica separation layer, the separation layer is in air groove
Place is attached to the silicon substrate of bottom surface, keeps the tank structure of recess.Preferably, separation layer thickness is 1 μm (1 micron), in machinery
There are surpluses when chemical polishing.
(3) sacrificial layer amorphous silicon is grown, air groove is filled up.
(4) the expendable material amorphous silicon outside air groove is removed by chemically mechanical polishing, and reduces surface roughness, later
It starts the cleaning processing.
(5) step 5 utilizes the successive one aluminium nitride kind of growth regulation of magnetron sputtering on the silica separation layer of high-temperature oxydation
Sublayer and molybdenum lower electrode layer, and lower electrode layer figure is etched using photoetching process；Magnetron sputtering is utilized on molybdenum lower electrode layer
The aluminium nitride piezoelectric layer of the successive nitride aluminium seed layer of growth regulation and doping scandium；Magnetic is utilized on the aluminium nitride piezoelectric layer of doping scandium
Control sputtering growth molybdenum upper electrode layer, and successively upper electrode layer figure and piezoelectricity layer pattern are etched using photoetching process；On molybdenum
Grown by Magnetron Sputtering aluminium nitride protective layer is utilized on electrode layer, and etches protection layer pattern using photoetching process.
Preferably, thickness of the thickness of second aln seed layer less than the first aln seed layer.
Preferably, first aln seed layer is with a thickness of 100nm (100 nanometers), with a thickness of 150nm, the second nitridation
Aluminium seed layer thickness is 10nm, and the aluminium nitride piezoelectric layer thickness for adulterating scandium is 500nm, and molybdenum upper electrode layer is with a thickness of 150nm, nitridation
Aluminium protective layer thickness is 100nm.
(6) sacrifice processing is carried out to amorphous silicon by being fluorinated xenon-133 gas, obtains air groove.
It is specific embodiments of the present invention and the technical principle used described in above, if conception under this invention institute
The change of work when the spirit that generated function is still covered without departing from specification and attached drawing, should belong to of the invention
Protection scope.
Claims (8)
1. a kind of thin film bulk acoustic wave resonator, it is characterised in that: including High Resistivity Si piece substrate, formed in High Resistivity Si piece substrate
The silica separation layer of high-temperature oxydation, the first aln seed layer being arranged on high-temperature oxydation silica separation layer,
The air chamber formed between high-temperature oxydation silica separation layer and the first aln seed layer being arranged thereon, in the first nitridation
The molybdenum lower electrode layer being arranged in aluminium seed layer, the second aln seed layer being arranged on molybdenum lower electrode layer, in the second aluminium nitride
The aluminium nitride piezoelectric layer for the doping scandium being arranged in seed layer, the molybdenum upper electrode layer being arranged on the aluminium nitride piezoelectric layer of doping scandium.
2. thin film bulk acoustic wave resonator according to claim 1, which is characterized in that including being set on the molybdenum upper electrode layer
The aluminium nitride protective layer set.
3. thin film bulk acoustic wave resonator according to claim 1 or 2, which is characterized in that second aln seed layer
Thickness less than the first aln seed layer thickness.
4. thin film bulk acoustic wave resonator according to claim 2, which is characterized in that the silica separation layer of high-temperature oxydation
With a thickness of 1 μm, the first aln seed layer is with a thickness of 100nm, and molybdenum lower electrode layer is with a thickness of 150nm, the second aln seed layer
With a thickness of 10nm, the aluminium nitride piezoelectric layer thickness for adulterating scandium is 500nm, and molybdenum upper electrode layer is with a thickness of 150nm, aluminium nitride protective layer
With a thickness of 100nm.
5. a kind of preparation method of thin film bulk acoustic wave resonator, which comprises the following steps:
Step 1, high resistant silicon wafer is cleaned, etches bevelled air groove on a silicon substrate；
Step 2, in silicon chip surface by one layer of thermal oxide growth fine and close silica separation layer, the separation layer is at air groove
It is attached to the silicon substrate of bottom surface, keeps the tank structure of recess；
Step 3, sacrificial layer amorphous silicon is grown, air groove is filled up；
Step 4, the expendable material amorphous silicon outside air groove is removed by chemically mechanical polishing, and reduces surface roughness, later
It starts the cleaning processing；
Step 5, on the silica separation layer of high-temperature oxydation using successive one aln seed layer of growth regulation of magnetron sputtering and
Molybdenum lower electrode layer, and lower electrode layer figure is etched using photoetching process；It is successively given birth on molybdenum lower electrode layer using magnetron sputtering
Long second aln seed layer and the aluminium nitride piezoelectric layer for adulterating scandium；Magnetron sputtering is utilized on the aluminium nitride piezoelectric layer of doping scandium
Molybdenum upper electrode layer is grown, and successively etches upper electrode layer figure and piezoelectricity layer pattern using photoetching process；
Step 6, sacrifice processing is carried out to amorphous silicon by being fluorinated xenon-133 gas, obtains air groove.
6. the preparation method of thin film bulk acoustic wave resonator according to claim 5, which is characterized in that the step 5 is being mixed
Grown by Magnetron Sputtering molybdenum upper electrode layer is utilized on the aluminium nitride piezoelectric layer of miscellaneous scandium, and successively etches top electrode using photoetching process
After layer pattern and piezoelectricity layer pattern, including Grown by Magnetron Sputtering aluminium nitride protective layer is utilized on molybdenum upper electrode layer, and utilize
Photoetching process etches protection layer pattern.
7. according to the preparation method of thin film bulk acoustic wave resonator described in claim 5 or 6, which is characterized in that described second
Thickness of the thickness of aln seed layer less than the first aln seed layer.
8. the preparation method of thin film bulk acoustic wave resonator according to claim 6, which is characterized in that high-temperature oxydation titanium dioxide
Silicon separation layer thickness is 1 μm, and the first aln seed layer is with a thickness of 100nm, and molybdenum lower electrode layer is with a thickness of 150nm, the second nitridation
Aluminium seed layer thickness is 10nm, and the aluminium nitride piezoelectric layer thickness for adulterating scandium is 500nm, and molybdenum upper electrode layer is with a thickness of 150nm, nitridation
Aluminium protective layer thickness is 100nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910181632.5A CN109905098A (en) | 2019-03-11 | 2019-03-11 | A kind of thin film bulk acoustic wave resonator and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910181632.5A CN109905098A (en) | 2019-03-11 | 2019-03-11 | A kind of thin film bulk acoustic wave resonator and preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109905098A true CN109905098A (en) | 2019-06-18 |
Family
ID=66947041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910181632.5A Pending CN109905098A (en) | 2019-03-11 | 2019-03-11 | A kind of thin film bulk acoustic wave resonator and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109905098A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110350079A (en) * | 2019-07-15 | 2019-10-18 | 京东方科技集团股份有限公司 | A kind of piezoelectric element and preparation method thereof and ultrasonic sensor |
| CN110868192A (en) * | 2019-10-11 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | Film bulk acoustic resonator and filter with packaging structure |
| CN110931629A (en) * | 2019-12-11 | 2020-03-27 | 重庆大学 | Structure for growth of aluminum nitride with high scandium-doped concentration |
| CN111277240A (en) * | 2020-03-07 | 2020-06-12 | 中国电子科技集团公司第二十六研究所 | Film layer structure of film bulk acoustic wave filter and preparation method thereof |
| CN111599915A (en) * | 2020-05-28 | 2020-08-28 | 重庆大学 | Seed layer structure-based preparation method of high-performance aluminum scandium nitride and product thereof |
| CN111641399A (en) * | 2020-06-01 | 2020-09-08 | 中国电子科技集团公司第二十六研究所 | Is provided with SiO2RF filter of passivation layer |
| WO2021042343A1 (en) * | 2019-09-05 | 2021-03-11 | 刘宇浩 | Method for forming bulk acoustic wave resonance device |
| WO2021109444A1 (en) * | 2019-12-04 | 2021-06-10 | 诺思(天津)微系统有限责任公司 | Bulk acoustic resonator, fabrication method therefor, filter and electronic device |
| CN113438588A (en) * | 2021-07-28 | 2021-09-24 | 成都纤声科技有限公司 | Micro-electro-mechanical system microphone, earphone and electronic equipment |
| CN113584443A (en) * | 2021-06-30 | 2021-11-02 | 武汉大学 | AlN/AlScN nano composite piezoelectric coating for high-temperature-resistant fastener and preparation method thereof |
| WO2022150752A1 (en) * | 2021-01-11 | 2022-07-14 | Raytheon Company | Strain compensated rare earth group iii-nitride heterostructures |
| WO2023201615A1 (en) * | 2022-04-21 | 2023-10-26 | Applied Materials, Inc. | Methods for reducing surface defects in active film layers |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101465628A (en) * | 2009-01-15 | 2009-06-24 | 电子科技大学 | Film bulk acoustic wave resonator and preparation method thereof |
| CN102931941A (en) * | 2012-10-29 | 2013-02-13 | 天津理工大学 | FBAR (film bulk acoustic resonator) substrate and preparation method thereof |
| CN103607178A (en) * | 2013-09-17 | 2014-02-26 | 诺思（天津）微系统有限公司 | Film bulk wave resonator and method for raising quality factor of film bulk wave resonator |
| CN105897211A (en) * | 2016-05-18 | 2016-08-24 | 华南理工大学 | Film bulk acoustic resonator having multiple resonance modes and preparation method thereof and filter |
| CN107689781A (en) * | 2016-08-03 | 2018-02-13 | 三星电机株式会社 | The manufacture method of bulk acoustic wave resonator, wave filter and bulk acoustic wave resonator |
-
2019
- 2019-03-11 CN CN201910181632.5A patent/CN109905098A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101465628A (en) * | 2009-01-15 | 2009-06-24 | 电子科技大学 | Film bulk acoustic wave resonator and preparation method thereof |
| CN102931941A (en) * | 2012-10-29 | 2013-02-13 | 天津理工大学 | FBAR (film bulk acoustic resonator) substrate and preparation method thereof |
| CN103607178A (en) * | 2013-09-17 | 2014-02-26 | 诺思（天津）微系统有限公司 | Film bulk wave resonator and method for raising quality factor of film bulk wave resonator |
| CN105897211A (en) * | 2016-05-18 | 2016-08-24 | 华南理工大学 | Film bulk acoustic resonator having multiple resonance modes and preparation method thereof and filter |
| CN107689781A (en) * | 2016-08-03 | 2018-02-13 | 三星电机株式会社 | The manufacture method of bulk acoustic wave resonator, wave filter and bulk acoustic wave resonator |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110350079A (en) * | 2019-07-15 | 2019-10-18 | 京东方科技集团股份有限公司 | A kind of piezoelectric element and preparation method thereof and ultrasonic sensor |
| WO2021042343A1 (en) * | 2019-09-05 | 2021-03-11 | 刘宇浩 | Method for forming bulk acoustic wave resonance device |
| CN114128140A (en) * | 2019-09-05 | 2022-03-01 | 常州承芯半导体有限公司 | Method for forming bulk acoustic wave resonance device |
| CN110868192A (en) * | 2019-10-11 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | Film bulk acoustic resonator and filter with packaging structure |
| WO2021109444A1 (en) * | 2019-12-04 | 2021-06-10 | 诺思(天津)微系统有限责任公司 | Bulk acoustic resonator, fabrication method therefor, filter and electronic device |
| CN110931629A (en) * | 2019-12-11 | 2020-03-27 | 重庆大学 | Structure for growth of aluminum nitride with high scandium-doped concentration |
| CN111277240A (en) * | 2020-03-07 | 2020-06-12 | 中国电子科技集团公司第二十六研究所 | Film layer structure of film bulk acoustic wave filter and preparation method thereof |
| CN111277240B (en) * | 2020-03-07 | 2022-05-03 | 中国电子科技集团公司第二十六研究所 | Film layer structure of film bulk acoustic wave filter and preparation method thereof |
| CN111599915A (en) * | 2020-05-28 | 2020-08-28 | 重庆大学 | Seed layer structure-based preparation method of high-performance aluminum scandium nitride and product thereof |
| CN111641399A (en) * | 2020-06-01 | 2020-09-08 | 中国电子科技集团公司第二十六研究所 | Is provided with SiO2RF filter of passivation layer |
| WO2022150752A1 (en) * | 2021-01-11 | 2022-07-14 | Raytheon Company | Strain compensated rare earth group iii-nitride heterostructures |
| US11942919B2 (en) | 2021-01-11 | 2024-03-26 | Raytheon Company | Strain compensated rare earth group III-nitride heterostructures |
| CN113584443A (en) * | 2021-06-30 | 2021-11-02 | 武汉大学 | AlN/AlScN nano composite piezoelectric coating for high-temperature-resistant fastener and preparation method thereof |
| CN113438588A (en) * | 2021-07-28 | 2021-09-24 | 成都纤声科技有限公司 | Micro-electro-mechanical system microphone, earphone and electronic equipment |
| WO2023201615A1 (en) * | 2022-04-21 | 2023-10-26 | Applied Materials, Inc. | Methods for reducing surface defects in active film layers |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109905098A (en) | A kind of thin film bulk acoustic wave resonator and preparation method | |
| CN102122939B (en) | Preset cavity type SOI (silicon on insulator) substrate film bulk acoustic wave filter and manufacturing method thereof | |
| CN109474252B (en) | Cavity film bulk acoustic resonator capable of improving Q value and preparation method thereof | |
| CN101465628B (en) | Film bulk acoustic wave resonator and preparation method thereof | |
| JP4345049B2 (en) | Thin film acoustic resonator and manufacturing method thereof | |
| CN112532195B (en) | Passive cavity type single crystal film bulk acoustic resonator structure and preparation method thereof | |
| CN110401428A (en) | Thin film bulk acoustic wave resonator and its manufacturing method | |
| CN101977026A (en) | Manufacturing method of cavity-type film bulk acoustic resonator (FBAR) | |
| CN107493086A (en) | Temperature-compensating SAW resonator and preparation method thereof | |
| JP2003289236A (en) | Quartz oscillator and manufacturing method therefor | |
| CN102315830A (en) | Manufacturing method of film bulk acoustic resonator | |
| CN101026371A (en) | Thin film piezoelectric resonator, method of manufacturing the same, and filter including the same | |
| CN210444236U (en) | FBAR filter | |
| CN110620563A (en) | Method for improving preparation yield of FBAR (film bulk acoustic resonator) filter and FBAR filter | |
| CN109560784B (en) | Lamb wave resonator and preparation method thereof | |
| CN114362711A (en) | High-bandwidth cavity type film bulk acoustic resonator and preparation method thereof | |
| CN111654258B (en) | Film bulk acoustic resonator manufacturing method, film bulk acoustic resonator and filter | |
| CN212163290U (en) | Scandium-doped aluminum nitride lamb wave resonator | |
| CN116683881A (en) | Preparation method and packaging method of bulk acoustic wave resonator | |
| JP2008178126A (en) | Thin film acoustic resonator, and manufacturing method thereof | |
| CN114584096A (en) | High-bandwidth silicon reverse side etching type film bulk acoustic resonator and preparation method thereof | |
| CN101447775B (en) | Polycrystalline cubic-phase silicon carbide micro-electro-mechanical system resonant device and preparation method thereof | |
| CN114465596A (en) | Resonator with pre-embedded sacrificial layer structure and preparation method thereof | |
| CN114499440A (en) | Single crystal film bulk acoustic resonator and preparation method and application thereof | |
| CN111697125A (en) | High-quality aluminum nitride piezoelectric film and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190618 |
|
| RJ01 | Rejection of invention patent application after publication |