CN111599915A - Seed layer structure-based preparation method of high-performance aluminum scandium nitride and product thereof - Google Patents
Seed layer structure-based preparation method of high-performance aluminum scandium nitride and product thereof Download PDFInfo
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- LUKDNTKUBVKBMZ-UHFFFAOYSA-N aluminum scandium Chemical compound [Al].[Sc] LUKDNTKUBVKBMZ-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 19
- 238000001451 molecular beam epitaxy Methods 0.000 claims abstract description 18
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 30
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 13
- 229910052706 scandium Inorganic materials 0.000 claims description 13
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 12
- 229910000542 Sc alloy Inorganic materials 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000012495 reaction gas Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 4
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- -1 nitrogen ions Chemical class 0.000 claims description 4
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 4
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000012159 carrier gas Substances 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000002243 precursor Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 82
- 239000013078 crystal Substances 0.000 abstract description 11
- 230000008021 deposition Effects 0.000 abstract description 4
- 239000011229 interlayer Substances 0.000 abstract description 4
- 239000012790 adhesive layer Substances 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- CUOITRGULIVMPC-UHFFFAOYSA-N azanylidynescandium Chemical compound [Sc]#N CUOITRGULIVMPC-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 101100460147 Sarcophaga bullata NEMS gene Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/093—Forming inorganic materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0176—Chemical vapour Deposition
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0176—Chemical vapour Deposition
- B81C2201/0177—Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, GaAs-epitaxy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0181—Physical Vapour Deposition [PVD], i.e. evaporation, sputtering, ion plating or plasma assisted deposition, ion cluster beam technology
Abstract
The invention relates to a seed layer structure-based preparation method of high-performance aluminum scandium nitride and a product thereof, belonging to the technical field of micro-opto-electro-mechanical systems. According to the invention, a seed layer and an aluminum scandium nitride piezoelectric layer are sequentially grown on a substrate layer by adopting a physical vapor deposition or chemical vapor deposition or pulse laser deposition or a molecular beam epitaxy method, and the purposes of reducing interlayer lattice mismatch, improving the growth quality of an aluminum scandium nitride crystal and reducing film stress can be achieved by growing the aluminum scandium nitride piezoelectric layer on the introduced seed layer; and meanwhile, the aluminum scandium nitride piezoelectric layer is grown by adopting a physical vapor deposition method, a chemical vapor deposition method, a pulse laser deposition method or a molecular beam epitaxy method, and the high-performance aluminum scandium nitride with excellent crystal growth quality, lower stress and high piezoelectric coefficient can be further obtained by adjusting the growth process.
Description
Technical Field
The invention belongs to the technical field of micro-opto-electro-mechanical systems, and particularly relates to a seed layer structure-based preparation method of high-performance aluminum scandium nitride and a product thereof.
Background
Scandium-doped aluminum nitride (ScAlN, scandium nitride for short) piezoelectric film has the characteristics of high sound velocity, high temperature resistance, stable performance, high piezoelectric coefficient, compatibility with CMOS process and the like, and is widely concerned at home and abroad. MEMS and NEMS devices prepared by taking scandium-doped aluminum nitride piezoelectric film as core technology are widely applied to the fields of 5G filters, sensors, resonators, energy collectors and the like.
The scandium-aluminum nitride piezoelectric film prepared by using a reactive sputtering method, a metal organic chemical vapor deposition method or a molecular beam epitaxy method as a core technology can generate lattice distortion compared with a pure aluminum nitride crystal due to the existence of scandium element, so that the c-axis orientation of the grown film is poorer, even the phenomenon of phase separation of aluminum nitride and scandium nitride occurs, and the piezoelectric coefficient of the film and the working performance of a device can be greatly reduced.
Therefore, it is necessary to prepare a high-performance aluminum scandium nitride film with excellent crystal growth quality, lower stress and high piezoelectric coefficient.
Disclosure of Invention
In view of the above, an objective of the present invention is to provide a method for preparing high performance aluminum scandium nitride based on a seed layer structure; another objective of the present invention is to provide a high performance aluminum scandium nitride based on the seed layer structure.
In order to achieve the purpose, the invention provides the following technical scheme:
1. a preparation method of high-performance aluminum scandium nitride based on a seed layer structure comprises the following steps:
(1) cleaning a substrate layer: removing stains on the surface of the substrate by adopting a chemical cleaning method or a plasma cleaning method, and then sequentially preparing an adhesion layer and a lower electrode on the substrate by a physical vapor deposition method, a chemical vapor deposition method, a pulse laser deposition method or a molecular beam epitaxy method;
(2) growing a seed layer on the upper surface of the substrate layer: growing a seed layer on the surface of the lower electrode on the substrate layer by adopting a physical vapor deposition method, a chemical vapor deposition method, a pulse laser deposition method or a molecular beam epitaxy method;
(3) growing an aluminum scandium nitride piezoelectric layer on the surface of the seed layer: and growing an aluminum scandium nitride piezoelectric layer on the surface of the seed layer by adopting a physical vapor deposition method, a chemical vapor deposition method, a pulse laser deposition method or a molecular beam epitaxy method.
Preferably, the thickness of the adhesion layer is 30-80 nm.
Preferably, the thickness of the lower electrode is 50-200 nm.
Preferably, the adhesion layer and the lower electrode are both prepared by physical vapor deposition, chemical vapor deposition, pulsed laser deposition or molecular beam epitaxy.
Preferably, the substrate is a MEMS substrate or a flexible substrate.
Preferably, the MEMS substrate is any one of silicon, silicon oxide, aluminum oxide, silicon carbide, or metal; the flexible substrate is PET, BCB, PI or PDMS.
Preferably, the film-based bonding force between the material adopted by the adhesion layer and the substrate is not less than 5N; the lower electrode is made of a metal material, and the lattice mismatch degree of the metal material and the ScAlN is not more than 30%.
Preferably, the material used for the adhesion layer is any one of AlN, TiW, Ti, or Cr.
Preferably, the metal material is any one of Mo, Pt, Ir, Al, Ti, or Au.
Preferably, in the step (2), the seed layer is AlN, GaN, ScAlN, YN, Al2O3Or ScGaN material.
Preferably, the thickness of the seed layer is 10-50 nm.
Preferably, in the physical vapor deposition method, kinetic energy is provided by an energy source with any one or more of aluminum, scandium, aluminum-scandium alloy, aluminum-scandium nitride or aluminum nitride as a target source, an inert gas argon as a working gas, and an active gas such as nitrogen as a reaction gas.
Preferably, in the chemical vapor deposition method, a metallorganic containing aluminum or scandium as a precursor, and hydrogen or nitrogen as a carrier gas.
Preferably, in the pulsed laser deposition method, one or more materials of aluminum, scandium, aluminum-scandium alloy, aluminum-scandium nitride or aluminum nitride are used as a target source, nitrogen is used as a reaction gas, and a laser light source is used as an energy source;
preferably, in the molecular beam epitaxy method, aluminum with a purity higher than 99%, scandium with a purity higher than 99%, or an aluminum-scandium alloy is used as a molecular beam source, and nitrogen gas or ammonia gas is used as a nitrogen source to provide nitrogen ions.
2. The product prepared by the preparation method.
Preferably, the product is sequentially from bottom to top: the substrate layer, the seed layer and the aluminum scandium nitride piezoelectric layer.
Preferably, the substrate layer comprises a substrate, an adhesion layer and a lower electrode from bottom to top in sequence.
The invention has the beneficial effects that:
1. the invention provides a seed layer structure-based high-performance aluminum scandium nitride preparation method, wherein an aluminum scandium nitride piezoelectric layer grows on a seed layer, so that the aims of reducing interlayer lattice mismatch, improving the growth quality of aluminum scandium nitride crystals and reducing film stress can be achieved; meanwhile, the aluminum scandium nitride piezoelectric layer is grown by adopting a physical vapor deposition, chemical vapor deposition, pulse laser deposition or molecular beam epitaxy method, and the high-performance aluminum scandium nitride with excellent crystal growth quality, lower stress and high piezoelectric coefficient can be further obtained by adjusting the growth process;
2. the invention also introduces an adhesive layer between the lower electrode and the substrate, improves the adhesiveness between the aluminum scandium nitride film and the substrate, and simultaneously, different adhesive layers can be respectively used for improving the film growth quality (aluminum nitride adhesive layer) and the piezoelectric coefficient d33Measurement (metal adhesion layer);
3. the high-performance aluminum scandium nitride prepared by the invention has good crystal growth quality, lower stress and higher piezoelectric coefficient.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention may be realized and attained by the means of the instrumentalities and combinations particularly pointed out hereinafter.
Drawings
For the purposes of promoting a better understanding of the objects, aspects and advantages of the invention, reference will now be made to the following detailed description taken in conjunction with the accompanying drawings in which:
FIG. 1 is a process for preparing high-performance aluminum scandium nitride based on a seed layer structure;
FIG. 2 is a schematic cross-sectional view of a prepared high-performance aluminum scandium nitride;
fig. 3 is an SEM image of high performance aluminum scandium nitride prepared in example 1.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention. It should be noted that, in the following embodiments, features in the embodiments may be combined with each other without conflict.
Example 1
A high-performance aluminum scandium nitride based on a seed layer structure is prepared by a physical vapor deposition method, the preparation flow is shown in figure 1, and the specific method is as follows:
1. preparing a substrate layer: firstly, removing stains on the surface of a silicon substrate by adopting a chemical cleaning method, and then sequentially growing and preparing a Ti adhesion layer with the thickness of 40nm (the Ti and the substrate have a film-substrate bonding force of not less than 5N) and a Pt lower electrode with the thickness of 120nm (the lattice mismatch degree between Pt and ScAlN is not more than 30%) on the substrate by a physical vapor deposition method;
2. continuously growing an AlN seed layer with the thickness of 40nm on the surface of the lower electrode layer by adopting a physical vapor deposition method;
3. growing an aluminum scandium nitride piezoelectric layer on the surface of the prepared seed layer by adopting a physical vapor deposition method, wherein the obtained structure is shown in figure 2;
in the physical vapor deposition method, the target source material is any one or more of aluminum, scandium, aluminum-scandium alloy, aluminum-scandium nitride or aluminum nitride, the working gas is inert gas argon, the reaction gas is active gas nitrogen, and the kinetic energy required by the film molecule deposition is provided by an energy source such as an electric field.
The SEM image prepared in the above example is shown in FIG. 3, and the full width at half maximum of the C-axis corresponding characteristic peak rocking curve was 2.1 ℃ and the piezoelectric coefficient was 27.5 pC/N.
Example 2
The high-performance aluminum scandium nitride based on the seed layer structure is prepared by a chemical vapor deposition method, and the specific method comprises the following steps:
1. preparing a substrate layer: firstly, removing stains on the surface of an alumina substrate by adopting a chemical cleaning method, and then sequentially growing and preparing an AlN adhesion layer (having a film-substrate bonding force of not less than 5N with the substrate in a substrate layer) with the thickness of 30nm and a Pt lower electrode (having a lattice mismatch degree with ScAlN of not more than 30%) with the thickness of 50nm on the substrate by adopting a chemical vapor deposition method;
2. a GaN seed layer with the thickness of 10nm is continuously grown on the surface of the lower electrode layer by adopting a chemical vapor deposition method;
3. growing an aluminum scandium nitride piezoelectric layer on the surface of the prepared seed layer by adopting a chemical vapor deposition method;
the precursor in the chemical vapor deposition method is a metallorganic containing aluminum or scandium, the carrier gas is hydrogen or nitrogen, and the preparation process is realized by controlling the reaction temperature and the reaction time.
Example 3
A high-performance aluminum scandium nitride based on a seed layer structure is prepared by a pulse laser deposition method, and the specific method is as follows:
1. preparing a substrate layer: firstly, removing stains on the surface of a silicon carbide substrate by adopting a chemical cleaning method, and then sequentially growing and preparing a Ti adhesion layer with the thickness of 60nm (film-substrate binding force not less than 5N is formed between the Ti adhesion layer and the substrate in a substrate layer) and an Al lower electrode with the thickness of 150nm (lattice mismatch degree between the Al adhesion layer and ScAlN is not more than 30%) on the substrate by adopting a pulse laser deposition method;
2. continuously growing a ScAlN seed layer with the thickness of 50nm on the surface of the lower electrode layer by using the pulse laser deposition method;
3. growing an aluminum scandium nitride piezoelectric layer on the surface of the prepared seed layer by adopting a pulse laser deposition method;
the target source material in the pulse laser deposition method is one or more of aluminum, scandium, aluminum-scandium alloy, aluminum-scandium nitride or aluminum nitride, the reaction gas is active gas nitrogen, and the energy source is a laser light source.
Example 4
A seed layer structure-based high-performance aluminum scandium nitride is prepared by a molecular beam epitaxy method, and the specific method is as follows:
1. preparing a substrate layer: firstly, removing stains on the surface of a PDMS substrate by adopting a plasma cleaning method, and then sequentially growing and preparing a Cr adhesion layer (having a film-substrate bonding force not less than 5N with the substrate in a substrate layer) with the thickness of 80nm and an Au lower electrode (having a lattice mismatch degree with ScAlN not more than 30%) with the thickness of 200nm on the substrate by adopting a molecular beam epitaxy method;
2. similarly, a YN seed layer with the thickness of 40nm is continuously grown on the surface of the lower electrode layer by adopting a molecular beam epitaxy method;
3. growing an aluminum scandium nitride piezoelectric layer on the surface of the prepared seed layer by adopting a molecular beam epitaxy method;
the molecular beam source in the physical vapor deposition method is high-purity (the purity is more than 99%) aluminum and scandium or aluminum-scandium alloy, and nitrogen gas or ammonia gas is used as a nitrogen source to provide nitrogen ions.
In the above embodiments 1 to 4, the substrate may be a MEMS substrate (any one of silicon, silicon oxide, aluminum oxide, silicon carbide, or metal) or a flexible substrate (PI or PDMS); the material adopted by the adhesion layer requires a material with film-substrate binding force not less than 5N with the substrate in the substrate layer, such as any one of AlN, Ti or Cr; the lattice mismatch degree between the material adopted by the lower electrode and the ScAlN is not more than 30 percent, such as any one of Mo, Pt, Al, Ir, Ti or Au; AlN, GaN, ScAlN, YN and Al are used as seed layer2O3Or ScGaN as a material.
Tests show that the performance of the high-performance aluminum scandium nitride prepared in the embodiments 2-4 is similar to that in the embodiment 1, and the purposes of reducing interlayer lattice mismatch, improving the growth quality of the aluminum scandium nitride crystal and reducing the film stress can be achieved by growing the aluminum scandium nitride piezoelectric layer on the seed layer.
The invention provides a seed layer structure-based high-performance aluminum scandium nitride preparation method, wherein an aluminum scandium nitride piezoelectric layer grows on a seed layer, so that the aims of reducing interlayer lattice mismatch, improving the growth quality of aluminum scandium nitride crystals and reducing film stress can be achieved; meanwhile, the aluminum scandium nitride piezoelectric layer is grown by adopting a physical vapor deposition, chemical vapor deposition, pulse laser deposition or molecular beam epitaxy method, and the high-performance aluminum scandium nitride with excellent crystal growth quality, lower stress and high piezoelectric coefficient can be further obtained by adjusting the growth process; in addition, the invention also introduces an adhesive layer between the lower electrode and the substrate, so that the adhesiveness between the aluminum scandium nitride film and the substrate is improved, and simultaneously, different adhesive layers can be respectively used for improving the film growth quality (aluminum nitride adhesive layer) and the piezoelectric coefficient d33Measurement (metal adhesion layer); the high-performance aluminum scandium nitride prepared by the invention has good crystal growth quality, lower stress and higher piezoelectric coefficient.
Finally, the above embodiments are only intended to illustrate the technical solutions of the present invention and not to limit the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions, and all of them should be covered by the claims of the present invention.
Claims (10)
1. A preparation method of high-performance aluminum scandium nitride based on a seed layer structure is characterized by comprising the following steps:
(1) preparing a substrate layer: removing stains on the surface of the substrate by adopting a chemical cleaning method or a plasma cleaning method, and then sequentially preparing an adhesion layer and a lower electrode on the substrate by a physical vapor deposition method, a chemical vapor deposition method, a pulse laser deposition method or a molecular beam epitaxy method;
(2) growing a seed layer on the upper surface of the substrate layer: growing a seed layer on the surface of the lower electrode on the substrate layer by adopting a physical vapor deposition method, a chemical vapor deposition method, a pulse laser deposition method or a molecular beam epitaxy method;
(3) growing an aluminum scandium nitride piezoelectric layer on the surface of the seed layer: and growing an aluminum scandium nitride piezoelectric layer on the surface of the seed layer by adopting a physical vapor deposition method, a chemical vapor deposition method, a pulse laser deposition method or a molecular beam epitaxy method.
2. The method according to claim 1, wherein the thickness of the adhesion layer is 30 to 80nm, the thickness of the lower electrode is 50 to 200nm, and the thickness of the seed layer is 10 to 50 nm.
3. The method for manufacturing a semiconductor device according to claim 2, wherein the substrate is a MEMS substrate or a flexible substrate.
4. The production method according to claim 3, wherein the MEMS substrate is any one of silicon, silicon oxide, aluminum oxide, silicon carbide, or a metal; the flexible substrate is PI or PDMS.
5. The manufacturing method according to claim 2, wherein a film-based bonding force between a material used for the adhesion layer and the substrate is not less than 5N; the lower electrode is made of a metal material, and the lattice mismatch degree of the metal material and the ScAlN is not more than 30%.
6. The method according to claim 5, wherein the adhesion layer is made of AlN, TiW, Ti or Cr.
7. The method according to claim 5, wherein the metal material is any one of Mo, Pt, Ir, Al, Ti, or Au.
8. The method according to claim 1, wherein in step (2), AlN, GaN, ScAlN, YN, Al is used as the seed layer2O3Or ScGaN material.
9. The method according to claim 1, wherein kinetic energy is provided by an energy source using one or more of aluminum, scandium, an aluminum-scandium alloy, aluminum scandium nitride, and aluminum nitride as a target source, using an inert gas argon as a working gas, and using a reactive gas such as nitrogen as a reactive gas;
in the chemical vapor deposition method, metallorganics containing aluminum or scandium elements are used as precursors, and hydrogen or nitrogen is used as carrier gas;
in the pulse laser deposition method, one or more materials of aluminum, scandium, aluminum-scandium alloy, aluminum scandium nitride or aluminum nitride are used as a target source, nitrogen is used as a reaction gas, and a laser light source is used as an energy source;
in the molecular beam epitaxy method, aluminum with the purity higher than 99 percent and scandium or aluminum-scandium alloy with the purity higher than 99 percent are used as molecular beam sources, and nitrogen gas or ammonia gas is used as a nitrogen source to provide nitrogen ions.
10. The product prepared by the preparation method according to any one of claims 1 to 9.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN115216745B (en) * | 2022-06-30 | 2023-09-05 | 中国工程物理研究院电子工程研究所 | Piezoelectric thick film preparation method based on sequential physical deposition and industrial-grade piezoelectric thick film |
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