CN112928200B - Lead zirconate titanate piezoelectric film and preparation method and application thereof - Google Patents

Lead zirconate titanate piezoelectric film and preparation method and application thereof Download PDF

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CN112928200B
CN112928200B CN202110082483.4A CN202110082483A CN112928200B CN 112928200 B CN112928200 B CN 112928200B CN 202110082483 A CN202110082483 A CN 202110082483A CN 112928200 B CN112928200 B CN 112928200B
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lead zirconate
zirconate titanate
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欧阳俊
王莹莹
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Qilu University of Technology
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Abstract

The invention discloses a lead zirconate titanate piezoelectric film and a preparation method and application thereof, which are combined with a low-temperature film coating and rapid annealing process on a conductive perovskite buffer layer to obtain a PZT film with high (001) orientation and a piezoelectric cantilever beam structure thereof on silicon substrates with different orientations (100 or 111). Meanwhile, combining the interface engineering and the defect engineering, the self-bias (delta V) is realized in the PZT film c 4V) greatly improving the stability of the PZT film in piezoelectric applications.

Description

Lead zirconate titanate piezoelectric film and preparation method and application thereof
Technical Field
The invention belongs to the technical field of electronic material development and thin film material preparation, and particularly relates to a lead zirconate titanate piezoelectric thin film and a preparation method and application thereof.
Background
The information in this background section is only for enhancement of understanding of the general background of the invention and is not necessarily to be construed as an admission or any form of suggestion that this information forms the prior art that is already known to a person of ordinary skill in the art.
Ferroelectric materials, especially ferroelectric thin films, are one of the important raw materials for functional devices in the electronic industry, which mainly benefit from their excellent properties such as ferroelectricity, piezoelectricity, pyroelectric property, dielectricity, and electro-optical properties. In which the piezoelectric effect can be used to realize the mutual conversion between the mechanical stimulation and the electric energy from the outside or the corresponding mechanical response and control by using the electric energy, and thus their applications are receiving wide attention in piezoelectric micro electro mechanical systems (Piezo-MEMS) systems such as energy collectors and piezoelectric sensors. Perovskite ferroelectric thin films are the most widely used ferroelectric thin films in research and application due to their unique structural and performance advantages.
Lead zirconate titanate (Pb (Zr) x ,Ti 1～x )O 3 And x is about 0.52, abbreviated as PZT) is a representative material of perovskite ferroelectric thin films, and has excellent ferroelectric and piezoelectric properties and good stability, thus becoming the most extensive ferroelectric thin film material in scientific research and industrial applications. However, the inventors have found that the preparation temperature is higherThe complex structural state of multiphase multidomain causes the following problems to easily occur in the application of the multiphase multidomain in a piezoelectric micro-electro-mechanical system:
(1) Incompatibility with CMOS-Si processes (requiring heat treatment temperatures below 500 degrees celsius), and film preferred orientation dominated by substrate orientation rather than application;
(2) The nonlinear piezoelectric response caused by the complex structures, especially the hysteresis effect of the electrodisplacive displacement, affects the driving precision of the piezoelectric response;
(3) The PZT component with x of about 0.52 corresponds to 'soft' ferroelectrics, the coercive field strength is reduced while the piezoelectric effect is enhanced, and the electric domain instability and turnover are easily caused when the voltage fluctuates, so that the piezoelectric performance is reduced and even lost. Doping can "harden" it again, increasing its coercive field strength, but is often accompanied by increased process complexity and decreased piezoelectric performance.
Disclosure of Invention
Aiming at the technical problems in the prior art, the invention provides a zirconium titanate piezoelectric film and a preparation method and application thereof. And the PZT film with high (001) orientation and the piezoelectric cantilever structure thereof are obtained on silicon substrates with different orientations (100 or 111) by combining low-temperature film coating and a rapid annealing process on the conductive perovskite buffer layer. Meanwhile, combining the interface engineering and the defect engineering, the self-bias (delta V) is realized in the PZT film c 4V) greatly improves the stability of the PZT film in piezoelectric applications.
To solve the above technical problem, one or more of the following embodiments of the present invention provide the following technical solutions:
in a first aspect, the invention provides a lead zirconate titanate piezoelectric film, which comprises a base, a bottom electrode, a buffer layer, a PZT dielectric layer and a top electrical layer which are arranged in a superposition manner, wherein the base is made of (100) or (111) oriented silicon single crystal substrate, the bottom electrode is a Pt/Ti composite electrode, and the buffer layer is made of conductive oxide ceramic material; the orientation of the PZT thin film in the PZT dielectric layer is (001) orientation.
In a second aspect, the present invention provides a method for preparing the lead zirconate titanate piezoelectric film, comprising the following steps:
sequentially depositing a bottom electrode and a buffer layer on a substrate, and performing radio frequency magnetron sputtering on a PZT dielectric layer on the buffer layer;
then carrying out rapid annealing treatment on the PZT thin film system obtained by deposition;
and after annealing and cooling, depositing a top electrode on the PZT dielectric layer.
In a third aspect, the invention provides the use of the lead zirconate titanate piezoelectric film in the electronics industry.
Compared with the prior art, one or more technical schemes of the invention have the following beneficial effects:
the invention adopts a preparation process of a 'two-step method', firstly a conductive perovskite buffer layer and a PZT film layer are sputtered and deposited in situ on a silicon substrate at low temperature (350 ℃), and then Rapid Thermal Processing (RTP) is carried out in the air atmosphere, so as to obtain the PZT ferroelectric film with excellent piezoelectric performance and high (001) orientation. The polarization intensity-electric field curve (electric hysteresis loop) of the film material shows high squareness and large residual polarization (Pr) under the condition of full annealing>40μC/m 2 ) And high symmetry (Δ V) c 0) is used. By shortening the annealing time, the main defect type of the PZT thin film can be changed, and finally, by selecting top electrode materials with different work functions, the PZT thin film has large self-bias characteristic (delta V) c 4V) self-bias voltage of not less than 40% of its average coercive voltage, and the cantilever structure made of thin film has maximum piezoelectric displacement and effective piezoelectric coefficient not more than 10% after one million times of cyclic driving test under the test condition of not less than half of its maximum applicable voltage.
The cantilever beam made of the film material can generate high-linearity longitudinal displacement of 5-10 micrometers in non-resonance, and can generate longitudinal displacement (65 micrometers) of tens of micrometers under a voltage of several volts in resonance.
The PZT thin film prepared by the invention is (001) highly oriented and has remnant polarization>40μC/cm 2 Dielectric constant of>1000, the self-bias voltage is more than or equal to 4V, and the realization of the piezoelectric functional characteristic is ensured.
The PZT film is transversely piezoelectric under the bias voltage of 6V-20VCoefficient e 31,f The value is more than or equal to 14C/m 2 The performance is stable in the thickness range of 0.5-3 μm, and the fatigue resistance is high (can endure more than million times of repeated driving). The application of the piezoelectric micro-electromechanical system has remarkable advantages in piezoelectric micro-electromechanical systems such as mechanical energy collectors, piezoelectric micro-drivers and piezoelectric micro-sensors.
Transverse piezoelectric coefficient e thereof 31,f The absolute value reaches at least the theoretical value (| e) of the PZT thin film 31,f |～18.7C/m 2 ) 75% of the total. The piezoelectric displacement deviates from linearity by no more than 10% from 0 volts to the maximum applicable voltage.
Highly (001) -oriented PZT thin films can be grown on common (100) or (111) silicon substrates in the same process. The preparation process has low thermal budget, wide applicability, good repeatability and easy industrial popularization.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention and together with the description serve to explain the invention and not to limit the invention.
FIG. 1 is a schematic view of a PZT thin film heterostructure fabricated in an embodiment of the present invention; (b-c) XRD patterns of the silicon substrate with different annealing times (b) and (111) before and after the rapid annealing on the (100) silicon substrate; (d-E) are characteristic curves of the polarization intensity-electric field (P-E loops);
FIG. 2 is a schematic diagram of a PZT thin film cantilever structure and a transverse piezoelectric test prepared in the embodiment of the present invention, and a free end longitudinal displacement and a corresponding transverse piezoelectric coefficient e thereof 31,f (iv) a variation with applied voltage (V);
FIG. 3 is a schematic view of the principle of the magnetron sputtering method used in the example of the present invention;
FIG. 4 shows the maximum displacement and transverse piezoelectric coefficient e of a PZT thin film cantilever in an embodiment of the present invention 31,f The variation with the number of repetitive drives of the external electric field ("fatigue" test).
Wherein, 1-Si substrate, 2-bottom electrode, 3-buffer layer, 4-PZT film, 5-top electrode.
Detailed Description
It is to be understood that the following detailed description is exemplary and is intended to provide further explanation of the invention as claimed. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
In a first aspect, the invention provides a lead zirconate titanate piezoelectric film, which comprises a substrate, a bottom electrode, a buffer layer, a PZT dielectric layer and a top electric layer which are arranged in a superposed manner, wherein the substrate is made of (100) or (111) oriented silicon single crystal substrate, the bottom electrode is a Pt/Ti composite electrode, and the buffer layer is made of conductive oxide ceramic material; the orientation of the PZT thin film in the PZT dielectric layer is the (001) orientation.
In some embodiments, the top electrode is a pure metal material electrode.
Furthermore, the top electrode is made of Cu, al, ag, au, pt or Cr.
In some embodiments, the buffer layer is made of ABO 3 Conductive oxide ceramic materials with perovskite structure. The material can reduce lattice mismatch between the PZT thin film and the bottom electrode and the substrate.
Further, the buffer layer is made of strontium ruthenate, lanthanum nickelate, lanthanum strontium cobaltate or lanthanum strontium manganate.
The buffer layer material has the functions of reducing the lattice mismatch degree between the PZT thin film material and the substrate and the bottom electrode, reducing interface defects, reducing interface stress and being beneficial to the oriented growth of the thin film.
In some embodiments, the Pt/Ti bottom electrode has a thickness of 50 to 300nm, the buffer layer has a thickness of 50 to 400nm, and the PZT dielectric layer has a thickness of 500nm to 3 μm.
In some embodiments, the top electrode is a metal thin film dot electrode with a diameter of 50-200 μm or a metal face electrode with dimensions of-15 mm x 1.5 mm.
When measuring the polarization intensity-electric field curve of the PZT film material, a metal film point electrode with the diameter of 50-200 μm is used, and when measuring the piezoelectric property of the PZT cantilever beam structure, a metal surface electrode with the size of 15mm multiplied by 1.5mm is used.
In a second aspect, the present invention provides a method for preparing the lead zirconate titanate piezoelectric film, comprising the following steps:
sequentially depositing a bottom electrode and a buffer layer on a substrate, and performing radio frequency magnetron sputtering on a PZT dielectric layer on the buffer layer;
then carrying out rapid annealing treatment on the PZT thin film system obtained by deposition;
and after annealing and cooling, depositing a top electrode on the PZT dielectric layer.
In some embodiments, siO is selected 2 And (100) taking the Si substrate as a substrate, ultrasonically cleaning the substrate by using acetone and alcohol to remove organic impurities on the surface, cleaning the substrate by using deionized water, drying the substrate, and finally placing the substrate into a vacuum coating chamber to heat the substrate to 200-400 ℃.
In some embodiments, the bottom electrode is deposited by: metal Ti and Pt targets are adopted, a double-layer bottom electrode Pt/Ti is sequentially sputtered on a silicon substrate in a radio frequency or direct current magnetron sputtering mode, and the Pt layer is located on the outer side of the Ti layer. The outer side here means the side remote from the substrate.
Furthermore, the deposition atmosphere is pure Ar gas, and the flow rate of Ar gas is controlled to be 30-100 sccm.
Further, the air pressure during deposition is 0.1-3 Pa, and the target power density is 0.5-6.0W/cm 2 。
In some embodiments, the buffer layer is deposited by rf magnetron sputtering.
Further, the atmosphere during deposition is Ar and O 2 In the mixed atmosphere of (1), the flow rate of Ar gas is 30-100sccm 2 The gas flow is 10-50 sccm.
Further, sinkThe air pressure during the product is 0.1-3 Pa, and the target power density is 0.5-6.0W/cm 2 。
In some embodiments, a PZT ceramic target with a composition x =0.52 ± 0.02 is used in depositing the PZT dielectric layer.
The lead zirconate titanate (PZT) material is lead zirconate (PbZrO) 3 ) And lead titanate (PbTiO) 3 ) A continuous solid solution is formed. Studies have shown Pb (Zr) near the morphotropic phase boundary (x is about 0.52) x ,Ti 1～x )O 3 The (PZT) material has the maximum value of each electrical property, so the invention selects the PZT ceramic target material of the components (x =0.52 +/-0.02) near the morphotropic phase boundary for improving each electrical property index of the PZT ferroelectric film. Containing an excess of 20% molar PbO to compensate for its volatilization losses.
Further, the deposition atmosphere when depositing the PZT dielectric layer is Ar and O 2 The flow rate of Ar gas in the deposition process is 30-100sccm 2 The gas flow is 10-50 sccm.
Furthermore, the air pressure during deposition is 0.8-3 Pa, and the target power density is 1.0-8.0W/cm 2 。
In some embodiments, during the annealing process, the atmosphere in the hearth is air atmosphere, the temperature rising rate is 1-5 ℃/s, and the temperature reduction rate is air cooling.
Furthermore, the annealing final temperature is 500-750 ℃, and the PZT film is kept at the annealing temperature for 1-20 min. The heat preservation time at high temperature is short, and the heat budget of the whole preparation process can be reduced.
In some embodiments, the atmosphere of the top electrode during deposition is pure Ar gas, the flow rate of Ar gas is controlled to be 30-100 sccm, the gas pressure during sputtering is controlled to be 0.1-3 Pa, and the target power density is 1.0-6.0W/cm 2 。
In a third aspect, the invention provides the use of the lead zirconate titanate piezoelectric film in the electronics industry;
further, the lead zirconate titanate piezoelectric film is applied to a micro driver, a micro sensor, a micro transducer or an energy collector.
The invention adopts a 'two-step method' combining magnetron sputtering and rapid annealing, and is beneficial toCompared with a one-step method of a high-temperature magnetron sputtering process, the two-step method reduces the thermal budget of the PZT thin film in the preparation process, so that the compatibility of the PZT thin film with a semiconductor process is improved while the high-quality PZT thin film is obtained, and the requirements of low energy consumption and high efficiency of the semiconductor industry are met. The magnetron sputtering method for preparing the film has the advantages that: 1) Almost all target components can be manufactured into a target material to be sputtered to form a film; 2) The film forming efficiency is high; 3) The film has high density and good flatness; 4) The film has good adhesion with the substrate. The principle of preparing the film by the magnetron sputtering method is shown in figure 3: the chamber is evacuated to a certain degree of vacuum, and an inert gas (usually Ar) is used as a carrier for gas discharge. Under the action of external electric field, ar atoms are ionized into Ar + Ions and electrons, creating a plasma glow discharge. Electrons fly to the substrate, and Ar + The ions do accelerated motion under a high-voltage electric field to bombard the target and release the energy thereof, and target atoms or atom clusters absorb Ar + The ion energy is free from lattice constraint, escapes from the surface of the target material and is deposited on the substrate material, and a continuous film is formed after a certain time. Magnetron sputtering can be used to prepare many different types of thin films including metal films, ceramic films, polymeric films, composite films, and the like. In the magnetron sputtering deposition process, a plurality of factors which can be regulated and controlled exist, and the sputtering parameters can be flexibly adjusted according to application requirements to obtain the required film material.
Rapid annealing (RTP) is a commonly used thermal treatment process in the research and development of semiconductor thin film materials and devices, and can raise the temperature of the materials to the annealing temperature within a short time, and the heating rate and the heat preservation time can be regulated and controlled. Because the rapid annealing temperature rise rate is fast enough, the growth process of the pyrochlore phase can be rapidly skipped to remove the impure phase and improve the crystallization degree of the perovskite phase for the PZT thin film. In addition, by using the buffer layer technology, the PZT thin film is induced to grow along (001) oriented crystals in the rapid annealing process (figure 1b, c), and the ferroelectric and piezoelectric properties of the PZT thin film are greatly improved.
Examples
(1) Treatment of substrates
Cleaning and installing: siO with (100) or (111) orientation 2 And the substrate is washed by deionized water after being ultrasonically cleaned by acetone and alcohol in sequence, and finally is placed on a substrate rack of a vacuum chamber after being dried. After the chamber was closed, the system was pumped to 3Pa by a mechanical pump, and then pumped to 10 Pa by a molecular pump -4 Pa。
Heating: introducing Ar gas into the vacuum chamber, adjusting the flow rate of the Ar gas, controlling the air pressure to be kept at 0.8-3 Pa, and then heating the substrate to ensure that the temperature of the substrate reaches 200-400 ℃.
(2) Preparation of pure metal bottom electrode
A Ti target and a Pt target were used, which were deposited sequentially on a substrate (Pt on Ti) in a vacuum chamber by means of radio frequency magnetron sputtering. The flow of Ar gas in the sputtering deposition process is controlled to be 30-100 sccm, the gas pressure in the sputtering process is kept to be 0.1-3 Pa, and the target power density is 0.5-6.0W/cm 2 The total thickness of the bottom electrode is 30-300 nm.
(3) Preparation of conductive oxide buffer layer
Using perovskite LaNiO 3 The target is completed by utilizing a radio frequency magnetron sputtering method. The atmosphere during deposition is Ar and O 2 Mixed atmosphere, ar gas flow rate is 30-100sccm in the sputtering deposition process 2 The gas flow is 10-50 sccm, the air pressure is controlled at 0.1-3 Pa, and the target power density is 0.5-6.0W/cm 2 The thickness of the film obtained by sputtering deposition is 50-400 nm.
(4) The preparation of PZT thin film adopts PZT thin film components near morphotropic phase boundary and 20% excess PbO, pb 1.2 Zr 0.53 Ti 0.47 O 3 And depositing the PZT film in a radio frequency magnetron sputtering mode. The sputtering is carried out in Ar and O 2 The flow rate of Ar gas in the deposition process is 30-100sccm 2 The gas flow is 10-50 sccm, the gas pressure is kept at 0.8-3 Pa, and the target power density is 1.0-8.0W/cm 2 The thickness of the obtained PZT film is 500nm to 3 μm.
(5) Rapid annealing treatment of PZT thin films
And (3) putting the PZT thin film obtained by sputtering deposition into a rapid annealing furnace, sealing a hearth and then heating. The heating rate is controlled to be 1-5 ℃/s, when the temperature of the rapid annealing furnace reaches 700 ℃, the PZT film is kept at the annealing temperature for 1-20min, and then the heating system of the rapid annealing furnace is closed to reduce the temperature of the PZT film to room temperature and then the PZT film is taken out.
(6) Preparation of the Top electrode
And depositing in a mask mode by using a metal foil target. Namely, a mask plate with an electrode shape is placed on a film, a sputtering instrument is sealed and pumped to a certain vacuum degree, and then the film is sputtered in Ar gas atmosphere (noble metal such as gold or platinum can be sputtered in air atmosphere), the air pressure is 2-5 Pa, the temperature is room temperature, and the target power density is 1.0-6.0W/cm 2 The diameter of the top electrode is controlled to be 20-500 mu m.
The prepared PZT thin film is analyzed by XRD, and before rapid annealing, the film is mainly oriented to (101) and contains more Pb oxide mixed phases. After the rapid annealing, not only the Pb oxide impurity phase is removed, but also the PZT is changed into complete (001) orientation, and the crystallinity of the film is obviously improved (figures 1 b-c).
The P-E hysteresis loops of the PZT thin film before and after the rapid annealing are shown in FIG. 1d, wherein a small graph is the P-E hysteresis loop of the PZT thin film with a thickness of 2 μm before the annealing. As can be seen from the figure, the PZT thin film does not exhibit ferroelectricity before the rapid annealing, mainly due to the influence of the Pb oxide hetero-phase. After a rapid annealing time of 15 minutes, the PZT thin film is turned to (001) high orientation with its maximum polarization P max About 100 mu C/cm 2 Residual polarization P r About 58 μ C/cm 2 The coercive voltage Vc is about 9V, self-biased to 0. If the annealing time is reduced to 2 minutes and the copper top electrode is used instead (FIG. 1 e), the maximum and remnant polarizations do not change much, but a self-bias of 4V is generated. It follows that (1) the improvement of crystallinity and the orientation transition are key to the improvement of ferroelectric properties; and (2) self-bias can be generated through interface regulation.
A schematic diagram of a transverse piezo test of a PZT thin film cantilever is shown in figure 2 (a). The free end of the PZT cantilever beam can generate 0.89-3.32 micron displacement by applying bias voltage of 6-20V to the PZT cantilever beam, and the corresponding | e 31,f The value of | reaches-14.0 to-15.7C/m 2 (FIG. 2 b). When the thickness of the silicon substrate is reduced from 0.5 mm to 0.3 mm, the free end of the cantilever beam can generate larger displacement (reaching 8 μm), and the piezoelectric constant of the cantilever beam is basically kept unchanged (figure 2 c). It is worth mentioning that these piezoelectric macro displacements increase substantially linearly with the electric field, whereas-15.7C/m 2 Has approached the theoretical value (e) of the transverse piezoelectric coefficient of the PZT thin film 31,f ～-18.7C/m 2 ). Furthermore, as can be seen in FIG. 2d, this cantilever structure can generate a piezoelectric displacement of 65 microns in the resonant state, while the driving voltage only needs 3 volts. The result shows that the PZT thin film material prepared by the invention has wide application prospect in a piezoelectric micro-electro-mechanical system. Finally, FIG. 4 shows that the maximum displacement and piezoelectric coefficient of the PZT thin film cantilever beam are substantially unchanged after one hundred twenty million repeated piezoelectric actuations. The piezoelectric effect is basically an intrinsic effect, and the self-bias electric domain structure designed by the invention has the characteristics of large displacement, high linearity and high stability, and is particularly suitable for device application.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. A lead zirconate titanate piezoelectric film, characterized in that: the high-power-consumption piezoelectric ceramic comprises a substrate, a bottom electrode, a buffer layer, a PZT dielectric layer and a top electric layer which are arranged in a superposition manner, wherein the substrate is made of (100) or (111) oriented silicon single crystal substrate, the bottom electrode is a Pt/Ti composite electrode, and the buffer layer is made of conductive oxide ceramic material; the orientation of the PZT thin film in the PZT dielectric layer is (001) orientation;
the buffer layer is made of ABO 3 A conductive oxide ceramic material of perovskite structure;
the preparation method of the lead zirconate titanate piezoelectric film comprises the following steps: sequentially depositing a bottom electrode and a buffer layer on a substrate, and performing radio frequency magnetron sputtering on a PZT dielectric layer on the buffer layer;
then carrying out rapid annealing treatment on the PZT thin film system obtained by deposition;
and after annealing and cooling, depositing a top electrode on the PZT dielectric layer.
2. The lead zirconate titanate piezoelectric film of claim 1, wherein: the top electrode is a pure metal material electrode;
the top electrode is made of Cu, al, ag, au, pt or Cr.
3. The lead zirconate titanate piezoelectric film according to claim 1, wherein:
the buffer layer is made of strontium ruthenate, lanthanum nickelate, lanthanum strontium cobaltate or lanthanum strontium manganate.
4. The lead zirconate titanate piezoelectric film of claim 1, wherein: the thickness of the Pt/Ti bottom electrode is 50-300 nm, the thickness of the buffer layer is 50-400nm, and the thickness of the PZT dielectric layer is 500 nm-3 mu m;
the top electrode is a metal film point electrode with the diameter of 50-200 mu m or a metal surface electrode with the size of 15mm multiplied by 1.5 mm.
5. A method for producing a lead zirconate titanate piezoelectric thin film according to any one of claims 1 to 4, comprising: the method comprises the following steps:
sequentially depositing a bottom electrode and a buffer layer on a substrate, and performing radio frequency magnetron sputtering on a PZT dielectric layer on the buffer layer;
then carrying out rapid annealing treatment on the PZT thin film system obtained by deposition;
and after annealing and cooling, depositing a top electrode on the PZT dielectric layer.
6. The method for producing a lead zirconate titanate piezoelectric film according to claim 5, wherein: selecting SiO 2 Taking a Si substrate as a substrate, ultrasonically cleaning the substrate by using acetone and alcohol to remove organic impurities on the surface, cleaning the substrate by using deionized water, drying the cleaned substrate, and placing the dried substrate on a tableHeating to 200-400 ℃ in a vacuum coating chamber.
7. The method for producing a lead zirconate titanate piezoelectric film according to claim 5, wherein: the deposition method of the bottom electrode comprises the following steps: sequentially sputtering metal Ti and Pt targets on a silicon substrate in a radio frequency or direct current magnetron sputtering mode to form a double-layer bottom electrode Pt/Ti, wherein the Pt layer is positioned on the outer side of the Ti layer; the outer side here means the side remote from the substrate;
the deposition atmosphere is pure Ar gas, and the flow rate of Ar gas is controlled to be 30-100 sccm;
the air pressure during deposition is 0.1-3 Pa, and the target power density is 0.5-6.0W/cm 2 。
8. The method for producing a lead zirconate titanate piezoelectric film according to claim 5, wherein: the deposition mode of the buffer layer is a radio frequency magnetron sputtering method;
the atmosphere during deposition is Ar and O 2 In a mixed atmosphere of 30 to 100sccm of Ar gas 2 The gas flow is 10-50 sccm;
the air pressure during deposition is 0.1-3 Pa, and the target power density is 0.5-6.0W/cm 2 。
9. The method for producing a lead zirconate titanate piezoelectric thin film according to claim 5, wherein: pb (Zr) is adopted in depositing PZT dielectric layer x ,Ti 1～x )O 3 A PZT ceramic target having a composition x =0.52 ± 0.02;
the deposition atmosphere when depositing the PZT dielectric layer is Ar and O 2 The flow rate of Ar gas in the deposition process is 30-100sccm 2 The gas flow is 10-50 sccm;
the air pressure during deposition is 0.8-3 Pa, and the target power density is 1.0-8.0W/cm 2 ；
In the annealing process, the atmosphere in the hearth is air atmosphere, the temperature rise rate is 1-5 ℃/s, and the temperature reduction rate is air cooling;
the final temperature of annealing is 500-750 ℃, and the PZT film is kept at the annealing temperature for 1-20 min;
the atmosphere of the top electrode during deposition is pure Ar gas, the flow of Ar gas is controlled to be 30-100 sccm, the air pressure during sputtering is controlled to be 0.1-3 Pa, and the target power density is 1.0-6.0W/cm 2 。
10. Use of the lead zirconate titanate piezoelectric thin film according to any one of claims 1 to 4 in the electronics industry, wherein: the lead zirconate titanate piezoelectric film is applied to a micro driver, a micro sensor, a micro energy converter or an energy collector.
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