CN116103608A - PZT ceramic thin film and method for manufacturing the same - Google Patents

PZT ceramic thin film and method for manufacturing the same Download PDF

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Publication number
CN116103608A
CN116103608A CN202310039484.XA CN202310039484A CN116103608A CN 116103608 A CN116103608 A CN 116103608A CN 202310039484 A CN202310039484 A CN 202310039484A CN 116103608 A CN116103608 A CN 116103608A
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target
lead
zirconium
thin film
titanium
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张�浩
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Synae Microelectronics Co ltd
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Synae Microelectronics Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target

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  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention discloses a PZT ceramic thin film and a preparation method thereof, wherein the preparation method comprises the following steps: s1, arranging a first electrode layer on a substrate; s2, setting a transition layer on the first electrode layer; s3, setting a PZT thin film layer on the transition layer through magnetron sputtering; the step S3 comprises the following steps: s3.1, filling argon and oxygen into a vacuum closed cavity and maintaining the air pressure of the closed cavity at a preset air pressure; a titanium target, a lead target and a zirconium target are arranged in the closed chamber; and S3.2, starting sputtering power supplies corresponding to the titanium target, the lead target and the zirconium target, respectively performing reactive sputtering on the titanium target, the lead target and the zirconium target, and depositing a lead zirconate titanate oxide film, namely a PZT film layer, on the surface of the transition layer. The preparation method of the PZT ceramic film forms the PZT film on the substrate by a magnetron sputtering mode, does not need to carry out procedures such as thinning and polishing, can be compatible with a semiconductor production process, meets the requirements of miniaturization and integration, and has simple preparation process and good repeatability.

Description

PZT ceramic thin film and method for manufacturing the same
Technical Field
The invention relates to the technical field of PZT preparation, in particular to a PZT ceramic thin film and a preparation method thereof.
Background
PZT (lead zirconate titanate) is a metal oxide ceramic material with excellent piezoelectric, pyroelectric and ferroelectric properties, and is widely used in pyroelectric, piezoelectric sensors, drivers and other fields. In recent years, along with miniaturization and higher integration degree of electronic components, sensors and actuators such as MEMS piezoelectric and pyroelectric sensors are widely used, and the PZT thin film preparation technology can well adapt to new development requirements.
The existing PZT thin film preparation process adopts a process processing method from top to bottom, is manufactured by cutting, grinding, thinning, polishing and other processes of bulk materials, has complex processes and poor repeatability, and cannot be compatible with a semiconductor production process.
Disclosure of Invention
The invention aims to solve the technical problem of providing a preparation method of a PZT ceramic film with simple working procedure and good repeatability and the PZT ceramic film prepared by the preparation method.
The technical scheme adopted for solving the technical problems is as follows: the preparation method of the PZT ceramic thin film comprises the following steps:
s1, arranging a first electrode layer on a substrate;
s2, setting a transition layer on the first electrode layer;
s3, setting a PZT thin film layer on the transition layer through magnetron sputtering;
the step S3 comprises the following steps:
s3.1, filling argon and oxygen into a vacuum closed cavity and maintaining the air pressure of the closed cavity at a preset air pressure; a titanium target, a lead target and a zirconium target are arranged in the closed chamber;
and S3.2, starting sputtering power supplies corresponding to the titanium target, the lead target and the zirconium target, respectively performing reactive sputtering on the titanium target, the lead target and the zirconium target, and depositing a lead zirconate titanate oxide film, namely a PZT film layer, on the surface of the transition layer.
Preferably, in step S3.1, the flow ratio of argon to oxygen is 1:4; the predetermined air pressure is 1.0Pa.
Preferably, in step S3.2, direct current sputtering is adopted for the titanium target and the lead target, and radio frequency sputtering is adopted for the zirconium target;
the sputtering power of the zirconium target, the titanium target and the lead target is 150W, 120W and 100W respectively.
Preferably, in step S3.1, in the closed chamber, the substrate with the first electrode layer and the transition layer and the titanium target, the lead target and the zirconium target are arranged in a regular tetrahedron, so that the substrate is located at one vertex facing upwards in the regular tetrahedron, and the titanium target, the lead target and the zirconium target are respectively located at three vertexes facing downwards in the regular tetrahedron; the bulls-eye of the titanium target, the lead target and the zirconium target are opposite to the substrate;
in step S3.2, the substrate is rotated relative to the titanium, lead and zirconium targets during sputtering.
Preferably, in step S3.1, within the closed chamber, the titanium, lead and zirconium targets are positioned on a bottom stage, and a substrate with a first electrode layer and a transition layer is positioned on a top tray opposite the bottom stage;
in step S3.2, during the sputtering process, the top tray drives the substrate to rotate relative to the titanium target, the lead target, and the zirconium target.
Preferably, an ion source is further arranged on the bottom platform.
Preferably, in step S1, the first electrode layer is formed on the substrate by magnetron sputtering in a closed chamber; wherein:
a titanium film was deposited on the surface of the substrate by a titanium target and by direct current sputtering under an argon atmosphere as a first electrode layer.
Preferably, in step S2, the transition layer is formed on the first electrode layer by magnetron sputtering in a closed chamber; wherein:
depositing a metal oxide film on the surface of the first electrode layer by reactive sputtering of a metal target in a mixed gas atmosphere of argon and oxygen to serve as a transition layer; the metal target is a titanium target, a lead target or a zirconium target.
Preferably, the method further comprises the following steps before step S1:
s0, mounting a titanium target, a lead target and a zirconium target in a closed cavity, placing a substrate in the closed cavity, and vacuumizing the closed cavity to a background vacuum of 4.0 multiplied by 10 -3 Pa。
Preferably, the method for preparing the PZT ceramic thin film further comprises the steps of:
and S4, arranging a second electrode layer on the PZT thin film layer.
The invention also provides a PZT ceramic thin film, which is prepared by adopting the preparation method of the PZT ceramic thin film.
The invention has the beneficial effects that: the PZT thin film (lead zirconate titanate oxide thin film) is formed on the substrate in a magnetron sputtering mode, the working procedures such as thinning and polishing are not needed, the method can be compatible with a semiconductor production process (the substrate material, the subsequent pixel manufacturing and processing and the like can be compatible with semiconductor two-dimensional graphical processing), the requirements of miniaturization and integration are met, the preparation process is simple, and the repeatability is good.
Drawings
The invention will be further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a schematic view showing the structure of a PZT ceramic thin film according to an embodiment of the present invention;
FIG. 2 is a schematic diagram showing the arrangement of a target and a substrate in a method for preparing a PZT ceramic thin film according to an embodiment of the present invention;
FIG. 3 is a schematic diagram showing the arrangement of a target and a substrate in a method for preparing a PZT ceramic thin film according to another embodiment of the present invention.
Description of the embodiments
For a clearer understanding of technical features, objects and effects of the present invention, a detailed description of embodiments of the present invention will be made with reference to the accompanying drawings.
According to the preparation method of the PZT ceramic thin film, the structural layers are sequentially arranged on the substrate in a bottom-up forming mode, and the processes of thinning, polishing and the like are not needed.
Referring to fig. 1, the method of preparing a PZT ceramic thin film of the present invention may include the steps of:
s1, a first electrode layer 20 is provided on the substrate 10.
The substrate 10 may be made of Si, glass, quartz, ceramic, sapphire, and the like.
The first electrode layer 20 is formed of a conductive metal, such as Pt, au, al, ti, zr, etc., and the first electrode layer 20 may be formed on the substrate 10 by evaporation, sputtering, or other methods.
S2, a transition layer 30 is arranged on the first electrode layer 20.
The transition layer 30 is a metal oxide, preferably the same metal as the PZT thin film layer 40, and is formed for solving the problem of lattice mismatch between the transition metal electrode and the PZT thin film layer 40 due to the material lattice difference, so that the film-base bonding force can be improved, and the PZT thin film having lattice orientation can be advantageously produced.
The thickness of the transition layer 30 may be 1nm to 50nm.
And S3, setting the PZT thin film layer 40 on the transition layer 30 through magnetron sputtering.
In the present invention, a zirconium target, a titanium target and a lead target are used as targets, and a lead zirconate titanate oxide film is deposited on the transition layer 30 by magnetron sputtering, namely, the PZT film layer 40.
S4, a second electrode layer 50 is disposed on the PZT thin film layer 40.
The material and arrangement of the second electrode layer 50 may be referred to the first electrode layer 20. Also, step S4 is a selective operation, so that the second electrode layer 50 may be provided or omitted.
Wherein, step S3 is performed in a closed chamber in combination with a magnetron sputtering mode.
Referring to fig. 1 to 3, step S3 may further include the steps of:
s3.1, filling argon and oxygen into a vacuum closed cavity and maintaining the air pressure of the closed cavity at a preset air pressure; a titanium target 41, a lead target 42 and a zirconium target 43 are installed in the closed chamber.
S3.2, turning on sputtering power supplies corresponding to the titanium target 41, the lead target 42 and the zirconium target 43, respectively performing reactive sputtering on the titanium target 41, the lead target 42 and the zirconium target 43, and depositing and forming a lead zirconate titanate oxide film, namely a PZT film layer 40, on the surface of the transition layer 30.
In the closed chamber, the arrangement of the substrate 10 and each target may be a regular tetrahedron or a planar turntable.
In the embodiment adopting the regular tetrahedron, referring to fig. 1 and 2, step S3 is specifically as follows:
s3.1, in the closed chamber, the substrate 10 with the first electrode layer 20 and the transition layer 30 and the titanium target 41, the lead target 42 and the zirconium target 43 are arranged in a regular tetrahedron, so that the substrate 10 is located at one vertex facing upwards in the regular tetrahedron, and the titanium target 41, the lead target 42 and the zirconium target 43 are located at three vertices facing downwards in the regular tetrahedron, respectively. The targets of the titanium target 41, lead target 42, and zirconium target 43 are facing the substrate 10.
Argon and oxygen are filled into the closed cavity according to the flow ratio of 1:4, and the air pressure of the closed cavity is maintained at 1.0Pa by adjusting the flow of the filled air.
S3.2, turning on sputtering power sources corresponding to the titanium target 41, the lead target 42 and the zirconium target 43, wherein the titanium target 41 and the lead target 42 adopt direct current sputtering, and the zirconium target 43 adopts radio frequency sputtering. The titanium target 41, the lead target 42 and the zirconium target 43 are respectively reactively sputtered, and a lead zirconate titanate oxide film, that is, a PZT film layer 40 is deposited on the surface of the transition layer 30. During sputtering, the substrate 10 is rotated relative to the titanium target 41, lead target 42, and zirconium target 43 to substantially deposit a uniform thin film of lead zirconate titanate on the surface of the transition layer 30.
Preferably, the sputtering powers of the zirconium target 43, the titanium target 41 and the lead target 42 are 150W, 120W and 100W, respectively. In the case of the sputtering time of 120min, the thickness of the PZT thin film layer 40 formed can be up to 2 μm.
It will be appreciated that the substrate 10 is positioned within the closed chamber by a rotating platform, and the substrate 10 is rotated (circumferentially rotated) by rotation of the rotating platform.
In the embodiment adopting the planar turntable mode, referring to fig. 1 and 3, step S3 is specifically as follows:
s3.1 in the closed chamber, the titanium target 41, the lead target 42 and the zirconium target 43 are positioned on the bottom stage 100, and the substrate 10 with the first electrode layer 20 and the transition layer 30 is positioned on the top tray 200 opposite the bottom stage 100. The substrate 10 faces the bottom platen 100 with the transition layer 30.
Argon and oxygen are filled into the closed cavity according to the flow ratio of 1:4, and the air pressure of the closed cavity is maintained at 1.0Pa by adjusting the flow of the filled air.
S3.2, turning on sputtering power sources corresponding to the titanium target 41, the lead target 42 and the zirconium target 43, wherein the titanium target 41 and the lead target 42 adopt direct current sputtering, and the zirconium target 43 adopts radio frequency sputtering. The titanium target 41, the lead target 42 and the zirconium target 43 are respectively reactively sputtered, and a lead zirconate titanate oxide film, that is, a PZT film layer 40 is deposited on the surface of the transition layer 30. During sputtering, the top tray 200 rotates the substrate 10 relative to the titanium target 41, lead target 42, and zirconium target 43 to substantially deposit a uniform thin film of lead zirconate titanate on the surface of the transition layer 30.
Preferably, the sputtering powers of the zirconium target 43, the titanium target 41 and the lead target 42 are 150W, 120W and 100W, respectively. In the case of the sputtering time of 120min, the thickness of the PZT thin film layer 40 formed can be up to 2 μm.
In this embodiment, a plurality of substrates 10 may be placed on the top tray 200, and the plurality of substrates 10 are arranged at intervals along the circumferential direction of the top tray 200, so that the preparation of the PZT thin film layers 40 on the plurality of substrates 10 can be accomplished at once.
In addition, the bottom stage 100 may be further provided with an ion source 300, which may be used to clean the substrate 10 before sputtering, and may be turned on during sputtering to increase the ionization rate and promote the reaction of the metal target with oxygen to produce a lead zirconate titanate oxide film.
When the ion source 300 is used for cleaning, argon is filled into the closed cavity, the ion source is started to ionize the argon, and argon ions bombard the surface of the substrate, so that the surface of the substrate can be cleaned, and the binding force of a film layer is enhanced.
The ion source 300 is started in the film plating process (sputtering process), so that the ionization rate of oxygen and metal target materials in the film plating atmosphere can be increased, the oxidation reaction is facilitated, and the PZT thin film material with sufficient oxidation is easily obtained.
Further, in a preferred embodiment, in the method of manufacturing a PZT ceramic thin film of the present invention, the first electrode layer 20, the transition layer 30, and the PZT thin film layer 40 are sequentially formed on the substrate 10 using magnetron sputtering. In this regard, the preparation method of this example comprises the following steps:
s0, mounting the titanium target 41, the lead target 42 and the zirconium target 43 in a closed cavity, placing the substrate 10 in the closed cavity, and vacuumizing the closed cavity to the background vacuum of 4.0 multiplied by 10 -3 Pa。
The arrangement of the titanium target 41, the lead target 42, the zirconium target 43, and the substrate 10 in the closed chamber may be a regular tetrahedral arrangement of fig. 2 or a planar turntable arrangement of fig. 3.
S1, firstly, heating the substrate 10 to 400-800 ℃, and specifically can be 600 ℃; argon is filled into the closed chamber to form an argon atmosphere, and the air pressure of the closed chamber is maintained at 1.0Pa by adjusting the flow rate of the argon.
The titanium target 41 is turned on in response to the direct-current sputtering power supply, and a titanium film is deposited on the surface of the substrate 10 as the first electrode layer 20. Wherein the sputtering power is 150W, the sputtering time is 20min, and the thickness of the deposited titanium film is 50nm.
S2, filling argon and oxygen into the closed cavity according to a flow ratio of 1:2, and maintaining the air pressure of the closed cavity at 0.4Pa by adjusting the flow of the filled air.
The zirconium target 43 is turned on in response to the radio frequency power source, and a zirconium oxide film is deposited on the surface of the first electrode layer 20 as the transition layer 30. Wherein the sputtering power is 50W, the sputtering time is 10min, and the thickness of the deposited zirconia film is 10nm.
Wherein the zirconium target 43 may be replaced with a titanium target or a lead target, thereby forming a titanium oxide film or a lead oxide film by corresponding deposition.
S3, filling argon and oxygen into the closed cavity according to a flow ratio of 1:4, and maintaining the air pressure of the closed cavity at 1.0Pa by adjusting the flow of the filled air. And turning on sputtering power sources corresponding to the titanium target 41, the lead target 42 and the zirconium target 43, and depositing a lead zirconate titanate oxide film on the surface of the transition layer 30.
Wherein, the titanium target 41 and the lead target 42 adopt direct current sputtering, the zirconium target 43 adopts radio frequency sputtering, and the sputtering power of the titanium target 41, the lead target 42 and the zirconium target 43 is 150W, 120W and 100W in sequence. The thickness of the obtained lead zirconate titanate oxide film is about 2um at the sputtering time of 120 min.
The lead zirconate titanate oxide film formed under the sputtering power is tested: the remnant polarization can reach 50uC/cm 2 . While the residual polarization of the obtained lead zirconate titanate oxide film is only 12C/cm under the condition that the sputtering power of the titanium target 41, the lead target 42 and the zirconium target 43 is 100W 2 。
When the second electrode layer 50 is required to be disposed, reference is made to the preparation of the first electrode layer 20 in step S1, which is not described herein.
The PZT ceramic thin film manufactured by the manufacturing method of the present invention, as shown in FIG. 1, includes a substrate 10, a first electrode layer 20, a transition layer 30, and a PZT thin film layer 40 sequentially disposed on the substrate 10.
The PZT ceramic film may further include a second electrode layer 50 disposed on the PZT film layer 40, as desired.
The PZT ceramic film is suitable for pyroelectric sensors and piezoelectric sensors with multi-pixel structures, and is used in the fields of human body recognition, gesture recognition, temperature sensing, gas detection, flame detection, artificial intelligence, security alarm and the like.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent structures or equivalent processes or direct or indirect application in other related technical fields are included in the scope of the present invention.

Claims (10)

1. A method for preparing a PZT ceramic thin film, comprising the steps of:
s1, arranging a first electrode layer on a substrate;
s2, setting a transition layer on the first electrode layer;
s3, setting a PZT thin film layer on the transition layer through magnetron sputtering;
the step S3 comprises the following steps:
s3.1, filling argon and oxygen into a vacuum closed cavity and maintaining the air pressure of the closed cavity at a preset air pressure; a titanium target, a lead target and a zirconium target are arranged in the closed chamber;
and S3.2, starting sputtering power supplies corresponding to the titanium target, the lead target and the zirconium target, respectively performing reactive sputtering on the titanium target, the lead target and the zirconium target, and depositing a lead zirconate titanate oxide film, namely a PZT film layer, on the surface of the transition layer.
2. The method of preparing a PZT ceramic thin film according to claim 1, wherein in step S3.1, the flow ratio of argon to oxygen is 1:4; the predetermined air pressure is 1.0Pa;
in the step S3.2, the titanium target and the lead target adopt direct current sputtering, and the zirconium target adopts radio frequency sputtering;
the sputtering power of the zirconium target, the titanium target and the lead target is 150W, 120W and 100W respectively.
3. The method of fabricating a PZT ceramic thin film according to claim 1, wherein in step S3.1, in the closed chamber, the substrate with the first electrode layer and the transition layer and the titanium target, the lead target and the zirconium target are arranged in a regular tetrahedron so that the substrate is located at one vertex facing upward in the regular tetrahedron, and the titanium target, the lead target and the zirconium target are located at three vertices facing downward in the regular tetrahedron, respectively; the bulls-eye of the titanium target, the lead target and the zirconium target are opposite to the substrate;
in step S3.2, the substrate is rotated relative to the titanium, lead and zirconium targets during sputtering.
4. The method of preparing a PZT ceramic thin film according to claim 1, wherein in step S3.1, the titanium target, lead target, and zirconium target are positioned on a bottom stage, and a substrate with a first electrode layer and a transition layer is positioned on a top tray opposite to the bottom stage in the closed chamber;
in step S3.2, during the sputtering process, the top tray drives the substrate to rotate relative to the titanium target, the lead target, and the zirconium target.
5. The method of preparing a PZT ceramic thin film according to claim 4, wherein an ion source is further provided on said bottom stage.
6. The method of preparing a PZT ceramic thin film according to claim 1, wherein in step S1, the first electrode layer is formed on the substrate by magnetron sputtering in a closed chamber; wherein:
a titanium film was deposited on the surface of the substrate by a titanium target and by direct current sputtering under an argon atmosphere as a first electrode layer.
7. The method of preparing a PZT ceramic thin film according to claim 1, wherein in step S2, the transition layer is formed on the first electrode layer by magnetron sputtering in a closed chamber; wherein:
depositing a metal oxide film on the surface of the first electrode layer by reactive sputtering of a metal target in a mixed gas atmosphere of argon and oxygen to serve as a transition layer; the metal target is a titanium target, a lead target or a zirconium target.
8. The method for preparing a PZT ceramic thin film according to any of claims 1 to 7, further comprising the step of, prior to step S1:
s0, mounting a titanium target, a lead target and a zirconium target in a closed cavity, placing a substrate in the closed cavity, and vacuumizing the closed cavity to a background vacuum of 4.0 multiplied by 10 -3 Pa。
9. The method for preparing a PZT ceramic thin film according to any one of claims 1 to 7, further comprising the steps of:
and S4, arranging a second electrode layer on the PZT thin film layer.
10. A PZT ceramic film produced by the method for producing a PZT ceramic film according to any one of claims 1 to 9.
CN202310039484.XA 2023-01-12 2023-01-12 PZT ceramic thin film and method for manufacturing the same Pending CN116103608A (en)

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