CN2414513Y - Ferrosilicon electric sandwich structure for electronic component and device - Google Patents
Ferrosilicon electric sandwich structure for electronic component and device Download PDFInfo
- Publication number
- CN2414513Y CN2414513Y CN00231330.8U CN00231330U CN2414513Y CN 2414513 Y CN2414513 Y CN 2414513Y CN 00231330 U CN00231330 U CN 00231330U CN 2414513 Y CN2414513 Y CN 2414513Y
- Authority
- CN
- China
- Prior art keywords
- layer
- thin film
- pzt
- electrode
- ferroelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910000519 Ferrosilicon Inorganic materials 0.000 title 1
- 239000010409 thin film Substances 0.000 claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 7
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 7
- 238000004377 microelectronic Methods 0.000 abstract description 5
- 238000000137 annealing Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 abstract description 3
- 239000010936 titanium Substances 0.000 description 18
- 238000002360 preparation method Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000003292 glue Substances 0.000 description 3
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 2
- 229940046892 lead acetate Drugs 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 150000003608 titanium Chemical class 0.000 description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- OERNJTNJEZOPIA-UHFFFAOYSA-N zirconium nitrate Chemical compound [Zr+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O OERNJTNJEZOPIA-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Landscapes
- Semiconductor Memories (AREA)
Abstract
The utility model relates to a silicon base ferroelectric sandwich structure for an electronic component, comprising a Pt/Ti electrode at a top layer, a PTZ ferroelectric thin film, a Pt/Ti electrode at a bottom layer, a silicon dioxide layer, and a silicon substrate. Each layer is orderly arranged, and the utility model also comprises PT layers. The PT layers are respectively positioned between the Pt/Ti electrode at the top layer and the PZT ferroelectric thin film, and between the PZT ferroelectric film and the Pt/Ti electrode at the bottom layer. The sandwich structure of the utility model reduces the annealing temperature of the ferroelectric thin film, and thereby, improves the compatibility of the preparing technology and the microelectronics technology of the ferroelectric thin film.
Description
The utility model relates to a kind of silicon-based ferroelectric sandwich structure that is used for electronic devices and components, belongs to field of semiconductor devices.
In recent years, ferroelectric thin film has a wide range of applications at aspects such as microsensor, microactrator, memory and photoelectric devices because of good dielectric that it had, piezoelectricity, ferroelectric and photoelectric characteristic.Lead titanate-zirconate (Pb wherein
x(Zr
yTi
1-y) O
3, hereinafter to be referred as PZT) and be a kind of ferroelectric material of studying at most.Microelectronic technique has developed into very ripe degree, if can the PZT ferroelectric thin film is more widely used with preparing the good PZT ferroelectric thin film of quality with the method for microelectronic technique compatibility.Usefulness sol-gel processes (sol-gel) such as Rao Yunhua have prepared a kind of Silicon PZT ferroelectric thin film structure, this structure is preparation PZT ferroelectric thin film on silicon-based substrate directly, see Fig. 1, consult document " preparation of lead titanate-zirconate ferroelectric thin film and performance study ", " membrane science and technology ", 1995,15 (4): 55-59.Though the processing step of preparation is fairly simple, the annealing temperature in the preparation process is difficult to and the microelectronic technique compatibility up to 900 ℃.And the ferroelectric thin film in this traditional structure is because through high annealing, quality can be subjected to very big influence, is difficult to obtain perfect performance.The direct like this ferroelectric thin film structure for preparing on silicon substrate just is difficult to be applied in the semiconductor device such as memory, transducer, has limited the development of PZT ferroelectric material.
The purpose of this utility model is to propose a kind of silicon-based ferroelectric PT/PZT/PT sandwich structure that is used for electronic devices and components (PT wherein is PbTiO
3, hereinafter to be referred as PT).PZT ferroelectric thin film in this structure has the good ferroelectric characteristic, and its preparation method can be relatively easy to same ic process compatibility, makes the PZT ferroelectric thin film can be applied to semiconductor components and devices such as memory, transducer.
The silicon-based ferroelectric sandwich structure that is used for electronic devices and components of the utility model design, comprise top layer Pt/Ti electrode, PZT ferroelectric thin film, bottom Pt/Ti electrode, silicon dioxide layer, silicon substrate, above-mentioned each layer is arranged in order, also comprise the PT layer, described PT layer bring to Front between Pt/Ti electrode and the PZT ferroelectric thin film respectively and PZT ferroelectric thin film and bottom Pt/Ti electrode between.PZT layer thickness wherein is 0.15～2 μ m, and the PT layer thickness is 0.01～0.1 μ m, and the PZT layer with the ratio of PT layer thickness is: 10～30.The Pt layer thickness is 1000～2000 in the bottom electrode wherein, and the Ti layer thickness is 50～100 .The Pt layer thickness is 800～1000 in the top layer electrode wherein, and the Ti layer thickness is 50～100 .
Adopt the PT/PZT/PT sandwich structure of design of the present utility model significantly to reduce the annealing temperature of ferroelectric thin film, thereby improved the preparation technology of ferroelectric thin film and the compatibility of microelectronic technique, test result shows that the PZT ferroelectric thin film shows good dielectric and ferroelectric properties simultaneously.This ferroelectric sandwich structure and preparation method thereof is applied to field of semiconductor devices such as memory, transducer possibility is provided for ferroelectric thin film.
Description of drawings.
Fig. 1 is existing silicon-based ferroelectric membrane structure.
Fig. 2 is a ferroelectric sandwich structure of the present utility model.
Among Fig. 1-Fig. 2: 1 is top layer Pt/Ti electrode; 2 is the PZT ferroelectric thin film; 3 is bottom Pt/Ti electrode; 4 is silicon dioxide layer; 5 is silicon substrate; 6 is the PT layer.
Below in conjunction with accompanying drawing, introduce principle of the present utility model and embodiment in detail.
The principle of the utility model institute foundation is: the lead titanates ferroelectric has the character structure similar to PZT, and its crystallization temperature is than PZT low (about 600 ℃), after the upper and lower surface of pzt thin film respectively adds one deck PT layer, the PT layer can provide nucleus for the crystallization of PZT from both direction, thereby significantly reduce the product temperature of PZT, improve the crystallization quality of pzt thin film.And by controlling the concentration and the even glue speed of PT colloidal sol, can make the thickness of the thickness of PT layer much smaller than pzt thin film, thereby make the adding of PT layer can ignore the influence of pzt thin film apparent property, can not cause the decline of pzt thin film apparent property.
The silicon-based ferroelectric sandwich structure that is used for electronic devices and components of the utility model design, as shown in Figure 1, comprise top layer Pt/Ti electrode 1, PZT ferroelectric thin film 2, bottom Pt/Ti electrode 3, silicon dioxide layer 4, silicon substrate 5, above-mentioned each layer is arranged in order, also comprise PT layer 6, described PT layer 6 bring to Front between Pt/Ti electrode 1 and the PZT ferroelectric thin film 2 respectively and PZT ferroelectric thin film 2 and bottom Pt/Ti electrode 3 between.
The silicon-based ferroelectric sandwich structure that is used for electronic devices and components of the utility model design, its preparation method is as follows:
(1) preparation PZT pioneer colloidal sol, make wherein x=0.9～1.1, y=0.4～0.6, take by weighing the lead acetate of respective amount according to the PZT component, zirconium nitrate and butyl titanate are dissolved in the appropriate amount of organic EGME, butyl titanate also can select for use isopropyl titanate etc. to contain titanium salt in the raw material, solvent can the spent glycol ether etc. other organic solvent.
(2) preparation PT pioneer colloidal sol, the content that makes Pb wherein is between 0.9～1.1, the lead acetate and the butyl titanate that take by weighing respective amount according to the PT component are dissolved in an amount of EGME, butyl titanate also can select for use isopropyl titanate etc. to contain titanium salt in the raw material, solvent can the spent glycol ether etc. other organic solvent.
(3) silicon dioxide of thermal oxide growth one deck 5000 on monocrystalline substrate, oxidizing process was made up of dried oxygen-wet oxygen-dried three steps of oxygen.
(4) rf magnetron sputtering layer of metal Pt/Ti layer is made hearth electrode on silicon dioxide layer, and the Pt layer thickness is 1000-2000 , and the Ti layer thickness is 50～100 , 120 ℃ of sputter temperature, sputter frequency 13.56MHz.
(5) at Pt/Ti/SiO
2Spin coating one deck PT layer on the/Si substrate, The pre-heat treatment was removed organic solvent in 1 minute in 380 ℃ of environment then, and heat treatment was thoroughly removed organic component in 2 minutes in 600 ℃ of environment again, and the thickness of PT layer is at 0.01～0.1 μ m.
(6) spin coating PZT colloidal sol on above-mentioned PT layer, The pre-heat treatment was removed organic solvent in 1 minute in 380 ℃ of environment then, heat treatment was thoroughly removed organic component in 2 minutes in 600 ℃ of environment again, repeated steps such as spin coating and The pre-heat treatment and made pzt thin film thickness reach 0.15～2 μ m.
(7) at pzt thin film surface spin coating one deck PT layer, The pre-heat treatment was removed organic solvent in 1 minute in 380 ℃ of environment then, and heat treatment was thoroughly removed organic component in 2 minutes in 600 ℃ of environment again, and the thickness of PT layer is at 0.01～0.1 μ m.
(8) can obtain crystallization good ferroelectric film to the heat treatment in 700 ℃ of environment of the above-mentioned PT/PZT/PT of acquiring film in 30 minutes.
(9) at the positive glue of ferroelectric thin film surface spin coating one deck, according to the photoetching selectively of top layer electrode position, the Pt/Ti of sputter layer of metal again layer, sputter temperature is 46 ℃, sputter frequency 13.56MHz, positive glue is peeled off and is formed the top layer electrode, and wherein the Pt layer thickness is 800～1000 , the Ti layer thickness is 50～100 , promptly gets the silicon-based ferroelectric sandwich structure that is used for electronic devices and components of the present invention.
Claims (4)
1, a kind of silicon-based ferroelectric sandwich structure that is used for electronic devices and components, comprise top layer Pt/Ti electrode, PZT ferroelectric thin film, bottom Pt/Ti electrode, silicon dioxide layer, silicon substrate, above-mentioned each layer is arranged in order, it is characterized in that also comprising two-layer PT layer, described PT layer bring to Front between Pt/Ti electrode and the PZT ferroelectric thin film respectively and PZT ferroelectric thin film and bottom Pt/Ti electrode between.
2, silicon-based ferroelectric sandwich structure as claimed in claim 1 is characterized in that, wherein said PZT layer thickness is 0.15～2 μ m, and the PT layer thickness is 0.01～0.1 μ m, and the PZT layer with the ratio of PT layer thickness is: 10～30.
3, silicon-based ferroelectric sandwich structure as claimed in claim 1 is characterized in that, the Pt layer thickness is 1000～2000 in the wherein said bottom electrode, and the Ti layer thickness is 50～100 .
4, silicon-based ferroelectric sandwich structure as claimed in claim 1 is characterized in that, the Pt layer thickness is 800～1000 in the wherein said top layer electrode, and the Ti layer thickness is 50～100 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN00231330.8U CN2414513Y (en) | 2000-03-31 | 2000-03-31 | Ferrosilicon electric sandwich structure for electronic component and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN00231330.8U CN2414513Y (en) | 2000-03-31 | 2000-03-31 | Ferrosilicon electric sandwich structure for electronic component and device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2414513Y true CN2414513Y (en) | 2001-01-10 |
Family
ID=33594246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN00231330.8U Expired - Fee Related CN2414513Y (en) | 2000-03-31 | 2000-03-31 | Ferrosilicon electric sandwich structure for electronic component and device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2414513Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112928200A (en) * | 2021-01-21 | 2021-06-08 | 齐鲁工业大学 | Lead zirconate titanate piezoelectric film and preparation method and application thereof |
-
2000
- 2000-03-31 CN CN00231330.8U patent/CN2414513Y/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112928200A (en) * | 2021-01-21 | 2021-06-08 | 齐鲁工业大学 | Lead zirconate titanate piezoelectric film and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5116643A (en) | Method for preparing PLZT, PZT and PLT sol-gels and fabricating ferroelectric thin films | |
| US5358889A (en) | Formation of ruthenium oxide for integrated circuits | |
| JP2782176B2 (en) | Method of forming platinum thin film on silicon wafer, silicon substrate manufactured by the method, and method of manufacturing semiconductor device using the substrate | |
| KR20030076927A (en) | Lead zirconate titanate dielectric thin film composites on metallic foils | |
| KR100781844B1 (en) | Ferroelectric Film and Method of Manufacturing The Same | |
| CN110993332B (en) | Preparation method of lead hafnate antiferroelectric thin film capacitor | |
| US20090208640A1 (en) | Fabrication method of composite metal oxide dielectric film, and composite metal oxide dielectric film fabricated thereby | |
| CN101388335A (en) | Preparation for ferroelectric material of quartz/lanthanum nickelate/bismuth ferrite-lead titanate | |
| CN101714579B (en) | Ferroelectric capacitor, method of manufacturing ferroelectric capacitor, and ferroelectric memory | |
| JPH0563205A (en) | Semiconductor device | |
| CN1790569B (en) | Dielectric thin film, dielectric thin film device, and method of production thereof | |
| US20020195612A1 (en) | Method of making a nickel-coated copper substrate and thin film composite containing the same | |
| US6528863B1 (en) | Perovskite-containing composite material, method of manufacturing said material, electronic component and module | |
| CN111525024A (en) | Bismuth ferrite film material, method for integrally preparing bismuth ferrite film on silicon substrate at low temperature and application | |
| CN2414513Y (en) | Ferrosilicon electric sandwich structure for electronic component and device | |
| JP4237967B2 (en) | Method for producing zirconate-lead titanate thick film using sol-gel process | |
| CN1119837C (en) | Silicon-based ferroelectric sandwich structure for electronic element and device and its manufacture | |
| JPH0745475A (en) | Thin film capacitor and fabrication thereof | |
| CN102174697B (en) | Method for growing oxide ferroelectric film on metallic nickel substrate | |
| KR100345014B1 (en) | Thin film capacitors on gallium arsenide substrate and process for making the same | |
| JPH0624222B2 (en) | Method of manufacturing thin film capacitor | |
| JP2004530584A (en) | Method for producing nickel-coated copper substrate and thin film composite including the substrate | |
| JPH0644601B2 (en) | Thin film capacitor and manufacturing method thereof | |
| CN103708848A (en) | Composite structure high electric energy density thick film and preparation method thereof | |
| JP3456434B2 (en) | Manufacturing method of ferroelectric memory |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |