CN106868596A - Growing method of gallium nitride and gallium nitride lasers based on ald aluminium nitride - Google Patents

Growing method of gallium nitride and gallium nitride lasers based on ald aluminium nitride Download PDF

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CN106868596A
CN106868596A CN201710039020.3A CN201710039020A CN106868596A CN 106868596 A CN106868596 A CN 106868596A CN 201710039020 A CN201710039020 A CN 201710039020A CN 106868596 A CN106868596 A CN 106868596A
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gallium nitride
nitrogen
hydrogen
copper substrate
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王文杰
李俊泽
龙衡
李沫
张健
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Institute of Electronic Engineering of CAEP
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers

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Abstract

The present invention relates to a kind of growing method and gallium nitride lasers of the gallium nitride based on ald aluminium nitride on Graphene, the method comprises the following steps：S1 polishes copper substrate, cleaning；S2 prepares graphene layer in copper substrate；S3 grows one layer of aluminum nitride thin layer using atomic layer deposition method on graphene layer；S4 grows GaN layer on aluminum nitride thin layer using metal-organic chemical vapor deposition equipment method, therefore can obtain high-quality gallium nitride lasers；The present invention is using graphene layer as the cushion between copper substrate and GaN epitaxial layer, the aln layer prepared by Atomic layer deposition method, the successively growth of the atomic layer of material can be realized, good thickness controllability and high-precision film growth quality, solve lattice mismatch big between substrate and epitaxial layer, improve the quality of epitaxial layer.

Description

Growing method of gallium nitride and gallium nitride lasers based on ald aluminium nitride
Technical field
The present invention relates to a kind of growing method of gallium nitride and gallium nitride based on ald aluminium nitride on Graphene Laser, belongs to photoelectron technical field.
Background technology
Gallium nitride material is of increased attention as a kind of new semi-conducting material.Partly led as the third generation The representative materials of body, gallium nitride has excellent electrical and optical properties, and it has the advantages that wider band gap, direct band gap, High temperature high voltage resistant, electron mobility is high etc., and advantage has a wide range of applications in the field such as electronic device and opto-electronic device, because It is the key for preparing above-mentioned device that this prepares high-quality gallium nitride.
Graphene is by sp between New Two Dimensional nano material their atom2Electron orbit is linked together, and There is the atom case of Hexagonal Close-packed due to Graphene, the arrangement situation with each layer atom in element nitride crystal is identical, therefore with Graphene can improve the crystal mass of nitride epitaxial layer as cushion.
In the preparation process of prior art nitride, the preparation of aluminium nitride film is mainly by magnetron sputtering, chemical gas The methods such as phase deposition, metal organic chemical vapor deposition, such as publication date are on July 6th, 2016, publication No.：CN105734530A, Apply for the Chinese patent literature of artificial Xian Electronics Science and Technology University, disclose one kind and magnetron sputtering aluminium nitride is based on Graphene Growing method of gallium nitride.The method is comprised the following steps that：(1) metal organic chemical vapor deposition is passed through in copper substrate MOCVD grows Graphene；(2) one layer of aluminium nitride film of Grown by Magnetron Sputtering is used in the copper substrate of covering graphene layer；(3) The aluminium nitride substrate that will be obtained carries out the heat treatment of certain hour；(4) it is organic that the sample after being heat-treated is put into metal The low V/III of extension compares epitaxial layer of gallium nitride than epitaxial layer of gallium nitride and V/III high successively in thing chemical vapor deposition MOCVD.Should Method easily obtains the preferable epitaxial layer of gallium nitride of quality in the copper substrate of covering graphene layer.But, the method is still present Weak point be：Using magnetron sputtering, sputtering rate is fast, but the of poor quality of film, impurity are more, and is grown into sputtering Also need to further heat treatment after film, thus the method cannot well-grown AlN layer so that the nitride of acquisition Quality of materials is poor.
The content of the invention
The present invention is in view of the shortcomings of the prior art, it is proposed that a kind of nitrogen based on ald aluminium nitride on Graphene Change gallium growing method and gallium nitride lasers, the growing method can effectively reduce the stress between substrate and epitaxial material, bright It is aobvious to improve epitaxial layer quality, the gallium nitride lasers of new construction can be prepared by the growing method.
Technical scheme is as follows：
A kind of growing method of gallium nitride based on ald aluminium nitride, it is characterised in that step is as follows：
S1 polishes copper substrate, cleaning；
S2 grows graphene layer in copper substrate；
S3 grows one layer of aluminum nitride thin layer using atomic layer deposition method on graphene layer；
S4 grows GaN layer on aluminum nitride thin layer using metal-organic chemical vapor deposition equipment method.
Wherein, step S1 is as follows：Copper substrate is carried out the greasy dirt and oxide layer on cleaning removal surface first, then is thrown through machinery After the dual polishing of light and electrochemical polish, cleaned with ethanol and deionized water successively three times, watery hydrochloric acid cleaning 5-10min, Deionized water is cleaned for several times, N2Drying obtains copper substrate.
Step S2 is as follows：
Be positioned over the copper substrate processed by step S1 in tube furnace quartz ampoule by S2a, vacuumizes 5-7min；
S2b is toward being passed through hydrogen, the sccm of flow 100 in tube furnace quartz ampoule, and it is small to be heated to 800-1050 DEG C of after annealing 0.5-3 When；
S2c carries out dilute layer of graphite toward being passed through the mixed gas of argon gas and hydrogen, carbon-source gas methane in tube furnace quartz ampoule again Growth, is then shut off carbon-source gas methane and hydrogen, cools to tube furnace quartz ampoule with the furnace room temperature under an argon atmosphere, obtains Growth has the copper substrate of dilute layer of graphite.
Wherein, the volume ratio of argon gas and hydrogen is 20 in the mixed gas being passed through in step S2c:1-10:1, hydrogen and first The volume ratio of alkane is 20:1- 4:1.
Step S3 is as follows：
Be positioned over the copper substrate that the growth that step S2 is processed has dilute layer of graphite in atomic layer deposition apparatus reaction chamber by S3a, takes out true Sky, air pressure is maintained at 0.2-0.4 Torr；
S3b in the atomic layer deposition apparatus reaction chamber to being passed through TMA（Trimethyl aluminium）With plasmarized nitrogen and hydrogen Mixed gas, TMA（Trimethyl aluminium）Used as silicon source, plasmarized nitrogen and the mixed gas of hydrogen are used as nitrogen source, nitrogen Gas or inert gas are used as carrier gas；
S3c repeat steps S3a, S3b, you can have on the brass basal surface of dilute layer of graphite in the growth and form aluminium nitride film.
In the S3b of above-mentioned steps S3：The volume ratio of nitrogen and hydrogen is 4:1, N2Used as carrier gas, carrier gas flux is in 40- 80sccm, so that the vacuum in chamber is maintained at 0.2Torr；
In the S3b：Cleaned to being passed through nitrogen in atomic layer deposition apparatus reaction chamber first before the deposition, sunk every time Nitrogen is passed through after product again to clean atomic layer deposition apparatus reaction chamber, scavenging period is 30-60s.
In the S3c：Each ALD（Ald）Circulation is followed successively by 0.2-0.4 s TMA pulses, during the purging of 50s Between, 40s nitrogen and hydrogen mixture gas pulse, the purge time of 40s, this is an ALD cycle, plasma generator , in 100w, growth temperature interval is at 100-300 DEG C for power.
It is 0.4 μm/h~4 μm/h using the growth rate of metal-organic chemical vapor deposition equipment method in the step S4, Growth temperature is 800-1200 DEG C, and the carrier gas for using is the mixed gas of nitrogen and hydrogen.
The structure of the product that present invention growth is obtained, is followed successively by from top to bottom：Copper substrate, graphene layer, aln layer, nitrogen Change gallium layer, the wherein thickness of graphene layer is 1-30 layers；Preferably, the thickness of graphene layer is 1-10 layers；AlN layers of thickness is 20-100nm；Preferably, AlN layers of thickness is 90nm, and the thickness of GaN layer is 0.4 μm~5 μm；Preferably, GaN layer thickness is 2 μm。
Based on above-mentioned growing method, gallium nitride lasers can also be prepared, the structure of the gallium nitride lasers is： Growth has graphene layer, aln layer, nitride buffer layer, n type gallium nitride layer, N-type coating, N-type successively in copper substrate Ducting layer, active area multiple quantum well layer, p-type ducting layer, p-type coating, p-type gallium nitride layer, form gallium nitride lasers structure.
Compared with prior art, excellent results of the invention are：
1) present invention, as the cushion between copper substrate and GaN epitaxial layer, can solve substrate by using graphene layer The problems such as defect dislocation that big lattice mismatch and thermal mismatching cause and epitaxial layer between, cracking, effectively reduce substrate and extension Stress, raising GaN epitaxial layer quality between material.
2) aln layer that the present invention is prepared by Atomic layer deposition method, it is possible to achieve the atomic layer of material is successively Growth, good thickness controllability and high-precision film growth quality, solve lattice big between substrate and epitaxial layer and lose With, improve epitaxial layer quality.
Brief description of the drawings
Fig. 1 is growth flow chart of the invention.
Fig. 2 is the cross-sectional view of the gallium nitride epitaxial slice for growing and obtaining of the invention.
Specific embodiment
In order that those skilled in the art more fully understands technical scheme, with reference to specific embodiment The present invention is described in further detail.
With reference to Fig. 1, step of the invention is as follows：
S1 polishes copper substrate, cleaning；
S2 grows graphene layer in copper substrate；
S3 grows one layer of aluminum nitride thin layer using atomic layer deposition method on graphene layer；
S4 grows GaN layer on aluminum nitride thin layer using metal-organic chemical vapor deposition equipment method.
Embodiment 1
Present invention specific implementation is as follows：
Copper substrate is carried out step S1 the greasy dirt and oxide layer on cleaning removal surface first, then through mechanical polishing and electrochemical polish Dual polishing after, cleaned three times with ethanol and deionized water successively, watery hydrochloric acid cleaning 5-10min, deionized water cleaning number It is secondary, N2Drying obtains copper substrate.
Step S2 grows graphene layer in copper substrate：
S2a is put the copper substrate processed by step S1 in tube furnace quartz ampoule, vacuumizes 5min；
S2b is passed through hydrogen, the sccm of flow 100, by diamond heating to 800 DEG C of after annealings 1 hour；
It is 10 that S2c is passed through carbon-source gas methane and volume ratio:1 argon gas and hydrogen gas mixture growth, closes carbon-source gas Methane and hydrogen, cool to tube furnace quartz ampoule with the furnace room temperature under an argon atmosphere, obtain growing the brass for having dilute layer of graphite Bottom.
Step S3 grows one layer of aluminum nitride thin layer using atomic layer deposition method on graphene layer：
Be positioned over the copper substrate that the growth processed by step S2 has dilute layer of graphite in atomic layer deposition apparatus reaction chamber by S3a, Vacuumize, air pressure is maintained at 0.2 Torr；
, to nitrogen wash chamber is passed through in chamber, TMA is used as silicon source, plasmarized nitrogen and the mixed gas of hydrogen for S3b Used as nitrogen source, the volume ratio of nitrogen and hydrogen is 4:1, used as carrier gas, carrier gas flux is 40sccm to nitrogen, so that true in chamber Reciprocal of duty cycle is maintained at 0.2 Torr；Each ALD cycle is followed successively by 0.2 s TMA pulses, the nitrogen purge time of 50s, 40s nitrogen With hydrogen mixture gas pulse, the nitrogen purge time of 40s, this is an ALD cycle, and the power of plasma generator exists 100w, growth temperature is at 100 DEG C.
Step S4 grows GaN layer on aluminum nitride thin layer using metal-organic chemical vapor deposition equipment method, wherein, growth Speed is 0.5 μm/h, and growth temperature is 800 DEG C, and the carrier gas for using is the mixed gas of nitrogen and hydrogen.
The structure of gallium nitride of ald aluminium nitride is based on the Graphene that the present invention makes as described in Figure 2, under To being above followed successively by：Copper substrate, graphene layer, aln layer, gallium nitride layer.
Embodiment 2
Present invention specific implementation is as follows：
Copper substrate is carried out step S1 the greasy dirt and oxide layer on cleaning removal surface first, then through mechanical polishing and electrochemical polish Dual polishing after, cleaned three times with ethanol and deionized water successively, watery hydrochloric acid cleaning 5-10min, deionized water cleaning number It is secondary, N2Drying obtains copper substrate.
Step S2 grows graphene layer in copper substrate：
S2a is put the copper substrate processed by step S1 in tube furnace quartz ampoule, vacuumizes 5min；
S2b is passed through hydrogen, the sccm of flow 100, by diamond heating to 1000 DEG C of after annealings 2 hours；
It is 20 that S2c is passed through carbon-source gas methane and volume ratio:1 argon gas and hydrogen gas mixture growth, closes carbon-source gas Methane and hydrogen, cool to tube furnace quartz ampoule with the furnace room temperature under an argon atmosphere, obtain growing the brass for having dilute layer of graphite Bottom.
Step S3 grows one layer of aluminum nitride thin layer using atomic layer deposition method on graphene layer：
Be positioned over the copper substrate that the growth processed by step S2 has dilute layer of graphite in atomic layer deposition apparatus reaction chamber by S3a, Vacuumize, air pressure is maintained at 0.2 Torr；
, to nitrogen wash chamber is passed through in chamber, TMA is used as silicon source, plasmarized nitrogen and the mixed gas of hydrogen for S3b Used as nitrogen source, the volume ratio of nitrogen and hydrogen is 4:1, used as carrier gas, carrier gas flux is 60sccm to nitrogen, so that true in chamber Reciprocal of duty cycle is maintained at 0.2Torr；Each ALD cycle is followed successively by 0.3 s TMA pulses, the nitrogen purge time of 50s, 40s nitrogen and Hydrogen mixture gas pulse, the nitrogen purge time of 40s, this is an ALD cycle, and the power of plasma generator exists 100w, growth temperature is at 250 DEG C.
Step S4 grows GaN layer on aluminum nitride thin layer using metal-organic chemical vapor deposition equipment method, wherein, growth Speed is 2 μm/h, and growth temperature is 1000 DEG C, and the carrier gas for using is the mixed gas of nitrogen and hydrogen.
Embodiment 3
Present invention specific implementation is as follows：
Copper substrate is carried out step S1 the greasy dirt and oxide layer on cleaning removal surface first, then is thrown through mechanical polishing and electrochemistry After the dual polishing of light, cleaned three times with ethanol and deionized water successively, watery hydrochloric acid cleaning 5-10min, deionized water cleaning For several times, N2Drying obtains copper substrate.
Step S2 grows graphene layer in copper substrate：
S2a is put the copper substrate processed by step S1 in tube furnace quartz ampoule, vacuumizes 7min；
S2b is passed through hydrogen, the sccm of flow 100, by diamond heating to 1050 DEG C of after annealings 3 hours；
It is 20 that S2c is passed through carbon-source gas methane and volume ratio:1 argon gas and hydrogen gas mixture growth, closes carbon-source gas Methane and hydrogen, cool to tube furnace quartz ampoule with the furnace room temperature under an argon atmosphere, obtain growing the brass for having dilute layer of graphite Bottom.
Step S3 grows one layer of aluminum nitride thin layer using atomic layer deposition method on graphene layer：
Be positioned over the copper substrate for having dilute layer of graphite by the growth of S2 step process in atomic layer deposition apparatus reaction chamber by S3a, Vacuumize, air pressure is maintained at 0.2Torr；
, to nitrogen wash chamber is passed through in chamber, TMA is used as silicon source, plasmarized nitrogen and the mixed gas of hydrogen for S3b Used as nitrogen source, the volume ratio of nitrogen and hydrogen is 4:1, used as carrier gas, carrier gas flux is 70sccm to nitrogen, so that true in chamber Reciprocal of duty cycle is maintained at 0.2Torr；Each ALD cycle is followed successively by 0.4 s TMA pulses, the nitrogen purge time of 50s, 40s nitrogen and Hydrogen mixture gas pulse, the nitrogen purge time of 40s, this is an ALD cycle, and the power of plasma generator exists 100w, growth temperature is at 300 DEG C.
Step S4 grows GaN layer on aluminum nitride thin layer using metal-organic chemical vapor deposition equipment method, wherein：Growth Speed is 4 μm/h, and growth temperature is 1200 DEG C, and the carrier gas for using is the mixed gas of nitrogen and hydrogen.
Embodiment 4
Gallium nitride lasers can also be prepared based on the method for the present invention, the structure of the gallium nitride lasers is：In copper substrate On successively growth have graphene layer, aln layer, nitride buffer layer, n type gallium nitride layer, N-type coating, N-type ducting layer, have Source region multiple quantum well layer, p-type ducting layer, p-type coating, p-type gallium nitride layer, form gallium nitride lasers structure.
The above is only the preferred embodiment of the present invention, it is noted that it is right that above-mentioned preferred embodiment is not construed as Limitation of the invention, protection scope of the present invention should be defined by claim limited range.For the art For those of ordinary skill, without departing from the spirit and scope of the present invention, some improvements and modifications can also be made, these change Enter and retouch and also should be regarded as protection scope of the present invention.

Claims (12)

1. the growing method of gallium nitride of ald aluminium nitride is based on, it is characterised in that step is as follows：
S1 polishes copper substrate, cleaning；
S2 grows graphene layer in copper substrate；
S3 grows one layer of aluminum nitride thin layer using atomic layer deposition method on graphene layer；
S4 grows GaN layer on aluminum nitride thin layer using metal-organic chemical vapor deposition equipment method.
2. the growing method of gallium nitride based on ald aluminium nitride according to claim 1, it is characterised in that described Step S1 is specifically referred to：Copper substrate is carried out the greasy dirt and oxide layer on cleaning removal surface first, then through mechanical polishing and electrification After the dual polishing of optical polishing, use successively：Ethanol and deionized water cleaning three times, watery hydrochloric acid cleaning 5-10min, deionized water Clean for several times, N2Drying obtains copper substrate.
3. the growing method of gallium nitride based on ald aluminium nitride according to claim 1, it is characterised in that described The concrete operations of step S2 are as follows：
Be positioned over the copper substrate processed by step S1 in tube furnace quartz ampoule by S2a, vacuumizes 5-7min；
S2b is toward being passed through hydrogen, the sccm of flow 100 in tube furnace quartz ampoule, and it is small to be heated to 800-1050 DEG C of after annealing 0.5-3 When；
S2c carries out dilute layer of graphite toward being passed through the mixed gas of argon gas and hydrogen, carbon-source gas methane in tube furnace quartz ampoule again Growth, is then shut off carbon-source gas methane and hydrogen, cools to tube furnace quartz ampoule with the furnace room temperature under an argon atmosphere, obtains Growth has the copper substrate of dilute layer of graphite；
Wherein, the volume ratio of argon gas and hydrogen is 20 in the mixed gas being passed through in step S2c:1-10:1, hydrogen and methane Volume ratio is 20:1- 4:1.
4. the growing method of gallium nitride based on ald aluminium nitride according to claim 1, it is characterised in that described The concrete operations of step S3 are as follows：
Be positioned over the copper substrate that the growth that step S2 is processed has dilute layer of graphite in atomic layer deposition apparatus reaction chamber by S3a, takes out true Sky, air pressure is maintained at 0.2-0.4 Torr；
S3b is to being passed through TMA with plasmarized nitrogen and the gaseous mixture of hydrogen in the atomic layer deposition apparatus reaction chamber Body, wherein TMA are made as silicon source, plasmarized nitrogen and the mixed gas of hydrogen as nitrogen source, nitrogen or inert gas It is carrier gas；
S3c repeat steps S3a, S3b, you can have on the brass basal surface of dilute layer of graphite in the growth and form aluminium nitride film.
5. the growing method of gallium nitride based on ald aluminium nitride according to claim 4, it is characterised in that institute In stating the S3b of step S3：The volume ratio of nitrogen and hydrogen is 4:1, N2As carrier gas, carrier gas flux in 40-80sccm so that chamber Indoor vacuum is maintained at 0.2Torr.
6. the growing method of gallium nitride based on ald aluminium nitride according to claim 4, it is characterised in that described In the S3b of step S3:Cleaned to being passed through nitrogen in atomic layer deposition apparatus reaction chamber first before the deposition, each Nitrogen is passed through after deposition again to clean atomic layer deposition apparatus reaction chamber, scavenging period is 30-60s.
7. the growing method of gallium nitride based on ald aluminium nitride according to claim 4, it is characterised in that institute In stating the S3c of step S3：Each ALD cycle is followed successively by 0.2-0.4 s TMA pulses, the purge time of 50s, 40s nitrogen and hydrogen Gas mixture gas pulse, the purge time of 40s, this is an atomic layer deposition cycle, and the power of plasma generator exists 100w, growth temperature interval is at 100-300 DEG C.
8. the growing method of gallium nitride based on ald aluminium nitride according to claim 1, it is characterised in that institute State in step S4, be 0.4 μm/h~4 μm/h using the growth rate of metal-organic chemical vapor deposition equipment method, growth temperature is 800-1200 DEG C, the carrier gas for using is the mixed gas of nitrogen and hydrogen.
9. the growing method of gallium nitride based on ald aluminium nitride according to claim 1, it is characterised in that described The thickness of the graphene layer that step S4 is obtained is 1-30 layers.
10. the growing method of gallium nitride based on ald aluminium nitride according to claim 1, it is characterised in that institute The thickness for stating AlN layers that step 3 is obtained is 20-100nm.
11. growing method of gallium nitride based on ald aluminium nitride according to claim 1, it is characterised in that institute The thickness for stating GaN layer is 0.4 μm~5 μm；Preferably, GaN layer thickness is 2 μm.
12. a kind of GaN base lasers, it is characterised in that growth has graphene layer, aln layer, nitrogen successively in copper substrate Change gallium cushion, n type gallium nitride layer, the covering of N-type coating, N-type ducting layer, active area multiple quantum well layer, p-type ducting layer, p-type Layer, p-type gallium nitride layer, form gallium nitride lasers structure.
CN201710039020.3A 2017-01-19 2017-01-19 Growing method of gallium nitride and gallium nitride lasers based on ald aluminium nitride Pending CN106868596A (en)

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CN109585270A (en) * 2018-11-15 2019-04-05 中国科学院半导体研究所 Method and structure based on amorphous substrate growing nitride
CN110670138A (en) * 2018-07-03 2020-01-10 中国科学院物理研究所 Composite seed crystal for aluminum nitride single crystal growth and preparation method thereof
CN111599915A (en) * 2020-05-28 2020-08-28 重庆大学 Seed layer structure-based preparation method of high-performance aluminum scandium nitride and product thereof
CN113594021A (en) * 2021-07-21 2021-11-02 东莞市中镓半导体科技有限公司 Manufacturing method of silicon-based GaN-HEMT epitaxial structure
CN113634289A (en) * 2021-08-09 2021-11-12 海南大学 Preparation method and device of monatomic catalyst

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