CN106868596A - Growing method of gallium nitride and gallium nitride lasers based on ald aluminium nitride - Google Patents

Growing method of gallium nitride and gallium nitride lasers based on ald aluminium nitride Download PDF

Info

Publication number
CN106868596A
CN106868596A CN201710039020.3A CN201710039020A CN106868596A CN 106868596 A CN106868596 A CN 106868596A CN 201710039020 A CN201710039020 A CN 201710039020A CN 106868596 A CN106868596 A CN 106868596A
Authority
CN
China
Prior art keywords
layer
gallium nitride
nitrogen
hydrogen
copper substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710039020.3A
Other languages
Chinese (zh)
Inventor
王文杰
李俊泽
龙衡
李沫
张健
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Electronic Engineering of CAEP
Original Assignee
Institute of Electronic Engineering of CAEP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Electronic Engineering of CAEP filed Critical Institute of Electronic Engineering of CAEP
Priority to CN201710039020.3A priority Critical patent/CN106868596A/en
Publication of CN106868596A publication Critical patent/CN106868596A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention relates to a kind of growing method and gallium nitride lasers of the gallium nitride based on ald aluminium nitride on Graphene, the method comprises the following steps：S1 polishes copper substrate, cleaning；S2 prepares graphene layer in copper substrate；S3 grows one layer of aluminum nitride thin layer using atomic layer deposition method on graphene layer；S4 grows GaN layer on aluminum nitride thin layer using metal-organic chemical vapor deposition equipment method, therefore can obtain high-quality gallium nitride lasers；The present invention is using graphene layer as the cushion between copper substrate and GaN epitaxial layer, the aln layer prepared by Atomic layer deposition method, the successively growth of the atomic layer of material can be realized, good thickness controllability and high-precision film growth quality, solve lattice mismatch big between substrate and epitaxial layer, improve the quality of epitaxial layer.

Description

Growing method of gallium nitride and gallium nitride lasers based on ald aluminium nitride
Technical field
The present invention relates to a kind of growing method of gallium nitride and gallium nitride based on ald aluminium nitride on Graphene Laser, belongs to photoelectron technical field.
Background technology
Gallium nitride material is of increased attention as a kind of new semi-conducting material.Partly led as the third generation The representative materials of body, gallium nitride has excellent electrical and optical properties, and it has the advantages that wider band gap, direct band gap, High temperature high voltage resistant, electron mobility is high etc., and advantage has a wide range of applications in the field such as electronic device and opto-electronic device, because It is the key for preparing above-mentioned device that this prepares high-quality gallium nitride.
Graphene is by sp between New Two Dimensional nano material their atom2Electron orbit is linked together, and There is the atom case of Hexagonal Close-packed due to Graphene, the arrangement situation with each layer atom in element nitride crystal is identical, therefore with Graphene can improve the crystal mass of nitride epitaxial layer as cushion.
In the preparation process of prior art nitride, the preparation of aluminium nitride film is mainly by magnetron sputtering, chemical gas The methods such as phase deposition, metal organic chemical vapor deposition, such as publication date are on July 6th, 2016, publication No.：CN105734530A, Apply for the Chinese patent literature of artificial Xian Electronics Science and Technology University, disclose one kind and magnetron sputtering aluminium nitride is based on Graphene Growing method of gallium nitride.The method is comprised the following steps that：(1) metal organic chemical vapor deposition is passed through in copper substrate MOCVD grows Graphene；(2) one layer of aluminium nitride film of Grown by Magnetron Sputtering is used in the copper substrate of covering graphene layer；(3) The aluminium nitride substrate that will be obtained carries out the heat treatment of certain hour；(4) it is organic that the sample after being heat-treated is put into metal The low V/III of extension compares epitaxial layer of gallium nitride than epitaxial layer of gallium nitride and V/III high successively in thing chemical vapor deposition MOCVD.Should Method easily obtains the preferable epitaxial layer of gallium nitride of quality in the copper substrate of covering graphene layer.But, the method is still present Weak point be：Using magnetron sputtering, sputtering rate is fast, but the of poor quality of film, impurity are more, and is grown into sputtering Also need to further heat treatment after film, thus the method cannot well-grown AlN layer so that the nitride of acquisition Quality of materials is poor.
The content of the invention
The present invention is in view of the shortcomings of the prior art, it is proposed that a kind of nitrogen based on ald aluminium nitride on Graphene Change gallium growing method and gallium nitride lasers, the growing method can effectively reduce the stress between substrate and epitaxial material, bright It is aobvious to improve epitaxial layer quality, the gallium nitride lasers of new construction can be prepared by the growing method.
Technical scheme is as follows：
A kind of growing method of gallium nitride based on ald aluminium nitride, it is characterised in that step is as follows：
S1 polishes copper substrate, cleaning；
S2 grows graphene layer in copper substrate；
S3 grows one layer of aluminum nitride thin layer using atomic layer deposition method on graphene layer；
S4 grows GaN layer on aluminum nitride thin layer using metal-organic chemical vapor deposition equipment method.
Wherein, step S1 is as follows：Copper substrate is carried out the greasy dirt and oxide layer on cleaning removal surface first, then is thrown through machinery After the dual polishing of light and electrochemical polish, cleaned with ethanol and deionized water successively three times, watery hydrochloric acid cleaning 5-10min, Deionized water is cleaned for several times, N2Drying obtains copper substrate.
Step S2 is as follows：
Be positioned over the copper substrate processed by step S1 in tube furnace quartz ampoule by S2a, vacuumizes 5-7min；
S2b is toward being passed through hydrogen, the sccm of flow 100 in tube furnace quartz ampoule, and it is small to be heated to 800-1050 DEG C of after annealing 0.5-3 When；
S2c carries out dilute layer of graphite toward being passed through the mixed gas of argon gas and hydrogen, carbon-source gas methane in tube furnace quartz ampoule again Growth, is then shut off carbon-source gas methane and hydrogen, cools to tube furnace quartz ampoule with the furnace room temperature under an argon atmosphere, obtains Growth has the copper substrate of dilute layer of graphite.
Wherein, the volume ratio of argon gas and hydrogen is 20 in the mixed gas being passed through in step S2c:1-10:1, hydrogen and first The volume ratio of alkane is 20:1- 4:1.
Step S3 is as follows：
Be positioned over the copper substrate that the growth that step S2 is processed has dilute layer of graphite in atomic layer deposition apparatus reaction chamber by S3a, takes out true Sky, air pressure is maintained at 0.2-0.4 Torr；
S3b in the atomic layer deposition apparatus reaction chamber to being passed through TMA（Trimethyl aluminium）With plasmarized nitrogen and hydrogen Mixed gas, TMA（Trimethyl aluminium）Used as silicon source, plasmarized nitrogen and the mixed gas of hydrogen are used as nitrogen source, nitrogen Gas or inert gas are used as carrier gas；
S3c repeat steps S3a, S3b, you can have on the brass basal surface of dilute layer of graphite in the growth and form aluminium nitride film.
In the S3b of above-mentioned steps S3：The volume ratio of nitrogen and hydrogen is 4:1, N2Used as carrier gas, carrier gas flux is in 40- 80sccm, so that the vacuum in chamber is maintained at 0.2Torr；
In the S3b：Cleaned to being passed through nitrogen in atomic layer deposition apparatus reaction chamber first before the deposition, sunk every time Nitrogen is passed through after product again to clean atomic layer deposition apparatus reaction chamber, scavenging period is 30-60s.
In the S3c：Each ALD（Ald）Circulation is followed successively by 0.2-0.4 s TMA pulses, during the purging of 50s Between, 40s nitrogen and hydrogen mixture gas pulse, the purge time of 40s, this is an ALD cycle, plasma generator , in 100w, growth temperature interval is at 100-300 DEG C for power.
It is 0.4 μm/h~4 μm/h using the growth rate of metal-organic chemical vapor deposition equipment method in the step S4, Growth temperature is 800-1200 DEG C, and the carrier gas for using is the mixed gas of nitrogen and hydrogen.
The structure of the product that present invention growth is obtained, is followed successively by from top to bottom：Copper substrate, graphene layer, aln layer, nitrogen Change gallium layer, the wherein thickness of graphene layer is 1-30 layers；Preferably, the thickness of graphene layer is 1-10 layers；AlN layers of thickness is 20-100nm；Preferably, AlN layers of thickness is 90nm, and the thickness of GaN layer is 0.4 μm~5 μm；Preferably, GaN layer thickness is 2 μm。
Based on above-mentioned growing method, gallium nitride lasers can also be prepared, the structure of the gallium nitride lasers is： Growth has graphene layer, aln layer, nitride buffer layer, n type gallium nitride layer, N-type coating, N-type successively in copper substrate Ducting layer, active area multiple quantum well layer, p-type ducting layer, p-type coating, p-type gallium nitride layer, form gallium nitride lasers structure.
Compared with prior art, excellent results of the invention are：
1) present invention, as the cushion between copper substrate and GaN epitaxial layer, can solve substrate by using graphene layer The problems such as defect dislocation that big lattice mismatch and thermal mismatching cause and epitaxial layer between, cracking, effectively reduce substrate and extension Stress, raising GaN epitaxial layer quality between material.
2) aln layer that the present invention is prepared by Atomic layer deposition method, it is possible to achieve the atomic layer of material is successively Growth, good thickness controllability and high-precision film growth quality, solve lattice big between substrate and epitaxial layer and lose With, improve epitaxial layer quality.
Brief description of the drawings
Fig. 1 is growth flow chart of the invention.
Fig. 2 is the cross-sectional view of the gallium nitride epitaxial slice for growing and obtaining of the invention.
Specific embodiment
In order that those skilled in the art more fully understands technical scheme, with reference to specific embodiment The present invention is described in further detail.
With reference to Fig. 1, step of the invention is as follows：
S1 polishes copper substrate, cleaning；
S2 grows graphene layer in copper substrate；
S3 grows one layer of aluminum nitride thin layer using atomic layer deposition method on graphene layer；
S4 grows GaN layer on aluminum nitride thin layer using metal-organic chemical vapor deposition equipment method.
Embodiment 1
Present invention specific implementation is as follows：
Copper substrate is carried out step S1 the greasy dirt and oxide layer on cleaning removal surface first, then through mechanical polishing and electrochemical polish Dual polishing after, cleaned three times with ethanol and deionized water successively, watery hydrochloric acid cleaning 5-10min, deionized water cleaning number It is secondary, N2Drying obtains copper substrate.
Step S2 grows graphene layer in copper substrate：
S2a is put the copper substrate processed by step S1 in tube furnace quartz ampoule, vacuumizes 5min；
S2b is passed through hydrogen, the sccm of flow 100, by diamond heating to 800 DEG C of after annealings 1 hour；
It is 10 that S2c is passed through carbon-source gas methane and volume ratio:1 argon gas and hydrogen gas mixture growth, closes carbon-source gas Methane and hydrogen, cool to tube furnace quartz ampoule with the furnace room temperature under an argon atmosphere, obtain growing the brass for having dilute layer of graphite Bottom.
Step S3 grows one layer of aluminum nitride thin layer using atomic layer deposition method on graphene layer：
Be positioned over the copper substrate that the growth processed by step S2 has dilute layer of graphite in atomic layer deposition apparatus reaction chamber by S3a, Vacuumize, air pressure is maintained at 0.2 Torr；
, to nitrogen wash chamber is passed through in chamber, TMA is used as silicon source, plasmarized nitrogen and the mixed gas of hydrogen for S3b Used as nitrogen source, the volume ratio of nitrogen and hydrogen is 4:1, used as carrier gas, carrier gas flux is 40sccm to nitrogen, so that true in chamber Reciprocal of duty cycle is maintained at 0.2 Torr；Each ALD cycle is followed successively by 0.2 s TMA pulses, the nitrogen purge time of 50s, 40s nitrogen With hydrogen mixture gas pulse, the nitrogen purge time of 40s, this is an ALD cycle, and the power of plasma generator exists 100w, growth temperature is at 100 DEG C.
Step S4 grows GaN layer on aluminum nitride thin layer using metal-organic chemical vapor deposition equipment method, wherein, growth Speed is 0.5 μm/h, and growth temperature is 800 DEG C, and the carrier gas for using is the mixed gas of nitrogen and hydrogen.
The structure of gallium nitride of ald aluminium nitride is based on the Graphene that the present invention makes as described in Figure 2, under To being above followed successively by：Copper substrate, graphene layer, aln layer, gallium nitride layer.
Embodiment 2
Present invention specific implementation is as follows：
Copper substrate is carried out step S1 the greasy dirt and oxide layer on cleaning removal surface first, then through mechanical polishing and electrochemical polish Dual polishing after, cleaned three times with ethanol and deionized water successively, watery hydrochloric acid cleaning 5-10min, deionized water cleaning number It is secondary, N2Drying obtains copper substrate.
Step S2 grows graphene layer in copper substrate：
S2a is put the copper substrate processed by step S1 in tube furnace quartz ampoule, vacuumizes 5min；
S2b is passed through hydrogen, the sccm of flow 100, by diamond heating to 1000 DEG C of after annealings 2 hours；
It is 20 that S2c is passed through carbon-source gas methane and volume ratio:1 argon gas and hydrogen gas mixture growth, closes carbon-source gas Methane and hydrogen, cool to tube furnace quartz ampoule with the furnace room temperature under an argon atmosphere, obtain growing the brass for having dilute layer of graphite Bottom.
Step S3 grows one layer of aluminum nitride thin layer using atomic layer deposition method on graphene layer：
Be positioned over the copper substrate that the growth processed by step S2 has dilute layer of graphite in atomic layer deposition apparatus reaction chamber by S3a, Vacuumize, air pressure is maintained at 0.2 Torr；
, to nitrogen wash chamber is passed through in chamber, TMA is used as silicon source, plasmarized nitrogen and the mixed gas of hydrogen for S3b Used as nitrogen source, the volume ratio of nitrogen and hydrogen is 4:1, used as carrier gas, carrier gas flux is 60sccm to nitrogen, so that true in chamber Reciprocal of duty cycle is maintained at 0.2Torr；Each ALD cycle is followed successively by 0.3 s TMA pulses, the nitrogen purge time of 50s, 40s nitrogen and Hydrogen mixture gas pulse, the nitrogen purge time of 40s, this is an ALD cycle, and the power of plasma generator exists 100w, growth temperature is at 250 DEG C.
Step S4 grows GaN layer on aluminum nitride thin layer using metal-organic chemical vapor deposition equipment method, wherein, growth Speed is 2 μm/h, and growth temperature is 1000 DEG C, and the carrier gas for using is the mixed gas of nitrogen and hydrogen.
Embodiment 3
Present invention specific implementation is as follows：
Copper substrate is carried out step S1 the greasy dirt and oxide layer on cleaning removal surface first, then is thrown through mechanical polishing and electrochemistry After the dual polishing of light, cleaned three times with ethanol and deionized water successively, watery hydrochloric acid cleaning 5-10min, deionized water cleaning For several times, N2Drying obtains copper substrate.
Step S2 grows graphene layer in copper substrate：
S2a is put the copper substrate processed by step S1 in tube furnace quartz ampoule, vacuumizes 7min；
S2b is passed through hydrogen, the sccm of flow 100, by diamond heating to 1050 DEG C of after annealings 3 hours；
It is 20 that S2c is passed through carbon-source gas methane and volume ratio:1 argon gas and hydrogen gas mixture growth, closes carbon-source gas Methane and hydrogen, cool to tube furnace quartz ampoule with the furnace room temperature under an argon atmosphere, obtain growing the brass for having dilute layer of graphite Bottom.
Step S3 grows one layer of aluminum nitride thin layer using atomic layer deposition method on graphene layer：
Be positioned over the copper substrate for having dilute layer of graphite by the growth of S2 step process in atomic layer deposition apparatus reaction chamber by S3a, Vacuumize, air pressure is maintained at 0.2Torr；
, to nitrogen wash chamber is passed through in chamber, TMA is used as silicon source, plasmarized nitrogen and the mixed gas of hydrogen for S3b Used as nitrogen source, the volume ratio of nitrogen and hydrogen is 4:1, used as carrier gas, carrier gas flux is 70sccm to nitrogen, so that true in chamber Reciprocal of duty cycle is maintained at 0.2Torr；Each ALD cycle is followed successively by 0.4 s TMA pulses, the nitrogen purge time of 50s, 40s nitrogen and Hydrogen mixture gas pulse, the nitrogen purge time of 40s, this is an ALD cycle, and the power of plasma generator exists 100w, growth temperature is at 300 DEG C.
Step S4 grows GaN layer on aluminum nitride thin layer using metal-organic chemical vapor deposition equipment method, wherein：Growth Speed is 4 μm/h, and growth temperature is 1200 DEG C, and the carrier gas for using is the mixed gas of nitrogen and hydrogen.
Embodiment 4
Gallium nitride lasers can also be prepared based on the method for the present invention, the structure of the gallium nitride lasers is：In copper substrate On successively growth have graphene layer, aln layer, nitride buffer layer, n type gallium nitride layer, N-type coating, N-type ducting layer, have Source region multiple quantum well layer, p-type ducting layer, p-type coating, p-type gallium nitride layer, form gallium nitride lasers structure.
The above is only the preferred embodiment of the present invention, it is noted that it is right that above-mentioned preferred embodiment is not construed as Limitation of the invention, protection scope of the present invention should be defined by claim limited range.For the art For those of ordinary skill, without departing from the spirit and scope of the present invention, some improvements and modifications can also be made, these change Enter and retouch and also should be regarded as protection scope of the present invention.

Claims (12)

1. the growing method of gallium nitride of ald aluminium nitride is based on, it is characterised in that step is as follows：
S1 polishes copper substrate, cleaning；
S2 grows graphene layer in copper substrate；
S3 grows one layer of aluminum nitride thin layer using atomic layer deposition method on graphene layer；
S4 grows GaN layer on aluminum nitride thin layer using metal-organic chemical vapor deposition equipment method.
2. the growing method of gallium nitride based on ald aluminium nitride according to claim 1, it is characterised in that described Step S1 is specifically referred to：Copper substrate is carried out the greasy dirt and oxide layer on cleaning removal surface first, then through mechanical polishing and electrification After the dual polishing of optical polishing, use successively：Ethanol and deionized water cleaning three times, watery hydrochloric acid cleaning 5-10min, deionized water Clean for several times, N2Drying obtains copper substrate.
3. the growing method of gallium nitride based on ald aluminium nitride according to claim 1, it is characterised in that described The concrete operations of step S2 are as follows：
Be positioned over the copper substrate processed by step S1 in tube furnace quartz ampoule by S2a, vacuumizes 5-7min；
S2b is toward being passed through hydrogen, the sccm of flow 100 in tube furnace quartz ampoule, and it is small to be heated to 800-1050 DEG C of after annealing 0.5-3 When；
S2c carries out dilute layer of graphite toward being passed through the mixed gas of argon gas and hydrogen, carbon-source gas methane in tube furnace quartz ampoule again Growth, is then shut off carbon-source gas methane and hydrogen, cools to tube furnace quartz ampoule with the furnace room temperature under an argon atmosphere, obtains Growth has the copper substrate of dilute layer of graphite；
Wherein, the volume ratio of argon gas and hydrogen is 20 in the mixed gas being passed through in step S2c:1-10:1, hydrogen and methane Volume ratio is 20:1- 4:1.
4. the growing method of gallium nitride based on ald aluminium nitride according to claim 1, it is characterised in that described The concrete operations of step S3 are as follows：
Be positioned over the copper substrate that the growth that step S2 is processed has dilute layer of graphite in atomic layer deposition apparatus reaction chamber by S3a, takes out true Sky, air pressure is maintained at 0.2-0.4 Torr；
S3b is to being passed through TMA with plasmarized nitrogen and the gaseous mixture of hydrogen in the atomic layer deposition apparatus reaction chamber Body, wherein TMA are made as silicon source, plasmarized nitrogen and the mixed gas of hydrogen as nitrogen source, nitrogen or inert gas It is carrier gas；
S3c repeat steps S3a, S3b, you can have on the brass basal surface of dilute layer of graphite in the growth and form aluminium nitride film.
5. the growing method of gallium nitride based on ald aluminium nitride according to claim 4, it is characterised in that institute In stating the S3b of step S3：The volume ratio of nitrogen and hydrogen is 4:1, N2As carrier gas, carrier gas flux in 40-80sccm so that chamber Indoor vacuum is maintained at 0.2Torr.
6. the growing method of gallium nitride based on ald aluminium nitride according to claim 4, it is characterised in that described In the S3b of step S3:Cleaned to being passed through nitrogen in atomic layer deposition apparatus reaction chamber first before the deposition, each Nitrogen is passed through after deposition again to clean atomic layer deposition apparatus reaction chamber, scavenging period is 30-60s.
7. the growing method of gallium nitride based on ald aluminium nitride according to claim 4, it is characterised in that institute In stating the S3c of step S3：Each ALD cycle is followed successively by 0.2-0.4 s TMA pulses, the purge time of 50s, 40s nitrogen and hydrogen Gas mixture gas pulse, the purge time of 40s, this is an atomic layer deposition cycle, and the power of plasma generator exists 100w, growth temperature interval is at 100-300 DEG C.
8. the growing method of gallium nitride based on ald aluminium nitride according to claim 1, it is characterised in that institute State in step S4, be 0.4 μm/h~4 μm/h using the growth rate of metal-organic chemical vapor deposition equipment method, growth temperature is 800-1200 DEG C, the carrier gas for using is the mixed gas of nitrogen and hydrogen.
9. the growing method of gallium nitride based on ald aluminium nitride according to claim 1, it is characterised in that described The thickness of the graphene layer that step S4 is obtained is 1-30 layers.
10. the growing method of gallium nitride based on ald aluminium nitride according to claim 1, it is characterised in that institute The thickness for stating AlN layers that step 3 is obtained is 20-100nm.
11. growing method of gallium nitride based on ald aluminium nitride according to claim 1, it is characterised in that institute The thickness for stating GaN layer is 0.4 μm~5 μm；Preferably, GaN layer thickness is 2 μm.
12. a kind of GaN base lasers, it is characterised in that growth has graphene layer, aln layer, nitrogen successively in copper substrate Change gallium cushion, n type gallium nitride layer, the covering of N-type coating, N-type ducting layer, active area multiple quantum well layer, p-type ducting layer, p-type Layer, p-type gallium nitride layer, form gallium nitride lasers structure.
CN201710039020.3A 2017-01-19 2017-01-19 Growing method of gallium nitride and gallium nitride lasers based on ald aluminium nitride Pending CN106868596A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710039020.3A CN106868596A (en) 2017-01-19 2017-01-19 Growing method of gallium nitride and gallium nitride lasers based on ald aluminium nitride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710039020.3A CN106868596A (en) 2017-01-19 2017-01-19 Growing method of gallium nitride and gallium nitride lasers based on ald aluminium nitride

Publications (1)

Publication Number Publication Date
CN106868596A true CN106868596A (en) 2017-06-20

Family

ID=59159127

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710039020.3A Pending CN106868596A (en) 2017-01-19 2017-01-19 Growing method of gallium nitride and gallium nitride lasers based on ald aluminium nitride

Country Status (1)

Country Link
CN (1) CN106868596A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107706274A (en) * 2017-10-25 2018-02-16 中国工程物理研究院电子工程研究所 It is a kind of based on preparation method of the hexagonal boron nitride graphene composite bed as the epitaxy of gallium nitride structure of cushion
CN109585270A (en) * 2018-11-15 2019-04-05 中国科学院半导体研究所 Method and structure based on amorphous substrate growing nitride
CN110670138A (en) * 2018-07-03 2020-01-10 中国科学院物理研究所 Composite seed crystal for aluminum nitride single crystal growth and preparation method thereof
CN111599915A (en) * 2020-05-28 2020-08-28 重庆大学 Seed layer structure-based preparation method of high-performance aluminum scandium nitride and product thereof
CN113594021A (en) * 2021-07-21 2021-11-02 东莞市中镓半导体科技有限公司 Manufacturing method of silicon-based GaN-HEMT epitaxial structure
CN113634289A (en) * 2021-08-09 2021-11-12 海南大学 Preparation method and device of monatomic catalyst

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101132111A (en) * 2006-08-23 2008-02-27 中国科学院半导体研究所 Manufacturing method for gallium nitride based blue laser device
CN103556217A (en) * 2013-09-27 2014-02-05 西安电子科技大学 Preparation method for 1-5 layer single crystal graphene
US20140255705A1 (en) * 2013-03-08 2014-09-11 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Growth of Crystalline Materials on Two-Dimensional Inert Materials
CN105633225A (en) * 2016-03-08 2016-06-01 西安电子科技大学 Gallium nitride growth method based on graphene and magnetron sputtering aluminum nitride
CN105655238A (en) * 2016-03-08 2016-06-08 西安电子科技大学 Silica-based gallium nitride growing method based on graphene and magnetron sputtering aluminum nitride
CN105734530A (en) * 2016-03-08 2016-07-06 西安电子科技大学 Method for growing gallium nitride on graphene based on magnetron sputtering of aluminum nitride

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101132111A (en) * 2006-08-23 2008-02-27 中国科学院半导体研究所 Manufacturing method for gallium nitride based blue laser device
US20140255705A1 (en) * 2013-03-08 2014-09-11 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Growth of Crystalline Materials on Two-Dimensional Inert Materials
CN103556217A (en) * 2013-09-27 2014-02-05 西安电子科技大学 Preparation method for 1-5 layer single crystal graphene
CN105633225A (en) * 2016-03-08 2016-06-01 西安电子科技大学 Gallium nitride growth method based on graphene and magnetron sputtering aluminum nitride
CN105655238A (en) * 2016-03-08 2016-06-08 西安电子科技大学 Silica-based gallium nitride growing method based on graphene and magnetron sputtering aluminum nitride
CN105734530A (en) * 2016-03-08 2016-07-06 西安电子科技大学 Method for growing gallium nitride on graphene based on magnetron sputtering of aluminum nitride

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107706274A (en) * 2017-10-25 2018-02-16 中国工程物理研究院电子工程研究所 It is a kind of based on preparation method of the hexagonal boron nitride graphene composite bed as the epitaxy of gallium nitride structure of cushion
CN110670138A (en) * 2018-07-03 2020-01-10 中国科学院物理研究所 Composite seed crystal for aluminum nitride single crystal growth and preparation method thereof
CN109585270A (en) * 2018-11-15 2019-04-05 中国科学院半导体研究所 Method and structure based on amorphous substrate growing nitride
CN111599915A (en) * 2020-05-28 2020-08-28 重庆大学 Seed layer structure-based preparation method of high-performance aluminum scandium nitride and product thereof
CN113594021A (en) * 2021-07-21 2021-11-02 东莞市中镓半导体科技有限公司 Manufacturing method of silicon-based GaN-HEMT epitaxial structure
CN113634289A (en) * 2021-08-09 2021-11-12 海南大学 Preparation method and device of monatomic catalyst

Similar Documents

Publication Publication Date Title
CN106868596A (en) Growing method of gallium nitride and gallium nitride lasers based on ald aluminium nitride
EP3547349B1 (en) Method for reducing silicon carbide epitaxial basal plane dislocation density
CN109545657B (en) Method for improving gallium oxide film grown on silicon carbide substrate
CN106868472B (en) Growth method of nitride epitaxial wafer and gallium nitride laser
US20100178234A1 (en) Multilayer substrate and method for producing the same, diamond film and method for producing the same
CN107706274B (en) Preparation method of gallium nitride epitaxial structure based on hexagonal boron nitride-graphene composite layer as buffer layer
CN110911270B (en) High-quality gallium oxide film and homoepitaxial growth method thereof
CN103035794B (en) A kind of growth LED on a si substrate and preparation method thereof
CN112309832B (en) Preparation method of transferable gallium oxide single crystal film
CN104867818B (en) A kind of method for reducing silicon carbide epitaxy material defect
CN103035496A (en) GaN film developed on silicon (Si) substrate and preparation method and application thereof
KR20140117277A (en) SINGLE-CRYSTAL 4H-SiC SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
CN105441902A (en) Epitaxial silicon carbide-graphene composite film preparation method
CN104846438B (en) Growth method of aluminum indium nitride film
CN110993752A (en) LED epitaxial growth method taking graphene as buffer layer
CN106876250B (en) Epitaxial growth method of gallium nitride film material
JP2014027028A (en) SiC EPITAXIAL SUBSTRATE MANUFACTURING DEVICE, METHOD FOR MANUFACTURING SiC EPITAXIAL SUBSTRATE, AND SiC EPITAXIAL SUBSTRATE
CN109671819A (en) A kind of GaN base light emitting epitaxial wafer and preparation method thereof
CN106129201B (en) Epitaxial wafer of light emitting diode and preparation method thereof
JP6927429B2 (en) Manufacturing method of SiC epitaxial substrate
CN108735864B (en) A kind of preparation method of LED epitaxial slice
CN106024862A (en) Preparation method for novel diamond film/GaN heterojunction with electrode
CN110670138A (en) Composite seed crystal for aluminum nitride single crystal growth and preparation method thereof
CN110808282A (en) Method for preparing silicon carbide MOSFET gate dielectric layer
CN114381710A (en) Preparation method of GaN film, GaN film and application of GaN film

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20170620

RJ01 Rejection of invention patent application after publication