CN105441902A - Epitaxial silicon carbide-graphene composite film preparation method - Google Patents
Epitaxial silicon carbide-graphene composite film preparation method Download PDFInfo
- Publication number
- CN105441902A CN105441902A CN201410392278.8A CN201410392278A CN105441902A CN 105441902 A CN105441902 A CN 105441902A CN 201410392278 A CN201410392278 A CN 201410392278A CN 105441902 A CN105441902 A CN 105441902A
- Authority
- CN
- China
- Prior art keywords
- vapor deposition
- chemical vapor
- deposition chamber
- silicon carbide
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to the technical field of semiconductors, and in particular relates to an epitaxially-grown silicon carbide-graphene composite film preparation method comprising the following steps: a pre-treated substrate is placed in a chemical vapor deposition chamber, the absolute vacuum of the chemical vapor deposition chamber is controlled to be higher than 10<-4> Pa, and a 2-10 micron silicon carbide epitaxial layer is grown on the surface of the substrate at 1500-1600 DEG C; the temperature of the chemical vapor deposition chamber is controlled to be lowered to 1000 DEG C, and in a protective atmosphere, the chemical vapor deposition chamber is heated from 1000 DEG C to 1600 DEG C, so that the silicon carbide epitaxial layer structure is decomposed and restructured to obtain a graphene composite layer on the substrate. The method is capable of not completely relying on an expensive single crystal SiC base material to achieve silicon carbide epitaxial layer-graphene continuous growth by use of high-temperature chemical vapor deposition equipment.
Description
Technical field
The invention belongs to semiconductor film material technical field, relate to a kind of preparation method of novel semi-conductor thin-film material, is exactly the method for continuous epitaxy larger area, evenly Graphene on silicon carbide epitaxial layers specifically.
Background technology
Graphene is a kind of carbon material by monolayer carbon atom tightly packed one-tenth bi-dimensional cellular shape structure, very excellent mechanics, calorifics, optics, electricity and chemical property is had, as carrier mobility, the specific surface area of super large, perfectly quantum tunneling effect, half-integer quantum hall effect etc. of superelevation because having unique crystal and electronic band structure.After the Late Cambrian Graphene of graceful Chester university of Britain A.K.Geim and K.S.Novoselov in 2004, Graphene becomes rapidly international forward position and the focus of the research fields such as present material, physics, chemistry, semi-conductor, microelectronics, biology, new forms of energy.Silicon carbide has laminate structure, and its basic comprising unit is the silicon-carbon diatomic layer of Siliciumatom and carbon atom composition.In making sic wafer process, because cutting knife can not be accomplished meticulous completely, cause completely along the direction cleavage that Si-C associative key is more weak between layers, but individual angle can not being had with cleavage surface, so that after carrying out dicing operation, silicon carbide along in a direction in step-like.Also Just because of this, on its step, the Graphene of growing high quality just becomes possibility.
Prepare Graphene and have a variety of method, as mechanically peel method, liquid phase or gas phase are dissociated method, oxidation reduction process, cutting nanometer tube method, chemical Vapor deposition process, single-crystal metal epitaxial method and SiC epitaxial growth method etc.SiC epitaxial growth method is under certain vacuum, and SiC is heated to certain temperature, causes Siliciumatom to evaporate, and remaining carbon atom is reconstructed formation Graphene.Because the substrate SiC of such growing graphene is semi-insulated, the sample after growth is without the need to carrying out substrate corrosion, and the work that sample migration etc. are loaded down with trivial details, directly can carry out the test of electricity.This reduces the impact of the factor such as defect, doping introduced in transfer process.One of this most effective way also making SiC substrate Epitaxial growth Graphene become to realize Graphene to apply at microelectronic.
Current SiC extending and growing graphene is all adopt monocrystal SiC substrate, and the SiC material defect that traditional single crystal preparation method obtains is more, is difficult to control thickness and doping, often do not reach the requirement manufacturing device, and high-quality monocrystal SiC substrate is expensive.The step of substrate being carried out to hydrogen etching was needed in addition before extending and growing graphene, because silicon carbide can retain a lot of cut through the rear surface of chemically machinery polished (CMP) art breading, directly all poor by its graphite morphology quality growing preparation, and on uniform step, growing the sample topography that obtains and quality can be well a lot, hydrogen etching is exactly a kind of generally acknowledged feasible scheme that can remove the defects such as the cut of sample surfaces.But hydrogen etching can make SiC substrate surface form lattice imperfection on the contrary improperly, and can produce the Compound deposition phenomenon of silicon, excessively cut down the enrichment of surface of SiC silicon, affect the epitaxy of Graphene.
Summary of the invention
For solving the problem, the invention provides a kind of preparation method of epitaxial silicon carbide-graphene composite film, it comprises the steps:
Step one: pretreated substrate is placed in chemical vapour deposition (CVD) cavity, controls described chemical vapor deposition chamber body Absolute truth reciprocal of duty cycle higher than 10
-4handkerchief, at the silicon carbide epitaxial layers of described substrate surface growth 2 ~ 10 microns at 1500 ~ 1600 DEG C;
Step 2: the temperature controlling described chemical vapor deposition chamber body is reduced to 1000 DEG C; under protective atmosphere, from 1000 DEG C, 1600 DEG C are heated to described chemical vapor deposition chamber body; make described silicon carbide epitaxial layers STRUCTURE DECOMPOSITION and restructuring, obtain Graphene composite bed on the substrate.
Wherein, described substrate is SiC.
Wherein, also comprise before described step one: utilize molecular beam epitaxy to grow the thick buffer layer of 10 ~ 100nm on the substrate.
Wherein, described substrate is GaN or Al
2o
3; Described buffer layer is AlN.
Wherein, under protective atmosphere, controlling described chemical vapor deposition chamber temperature in described step 2 is 1300 ~ 1600 DEG C.
Wherein, take staged to heat up to the heating of described chemical vapor deposition chamber body in described step 2, concrete operations are:
Control described chemical vapor deposition chamber temperature and be increased to 1100 DEG C, and keep 10 minutes;
Control described chemical vapor deposition chamber temperature and be increased to 1200 DEG C, and keep 10 minutes;
Control the rising of described chemical vapor deposition chamber temperature and reach 1300 ~ 1600 DEG C of scopes, and keep 30 ~ 50 minutes.
Further, take staged to heat up in described step 2 to the heating of described chemical vapor deposition chamber body, more preferred concrete operations are:
Control described chemical vapor deposition chamber temperature and be increased to 1100 DEG C, and keep 10 minutes;
Control described chemical vapor deposition chamber temperature and be increased to 1200 DEG C, and keep 10 minutes;
Control the rising of described chemical vapor deposition chamber temperature and reach 1450 ~ 1600 DEG C of scopes, and keep 30 ~ 50 minutes.
Beneficial effect of the present invention:
(1) extending and growing graphene film not exclusively depends on expensive carbide silicon base, but after growing silicon carbide epitaxial film, directly carry out the preparation of Graphene Heterogeneous Composite film continuously, and can grow on other hetero-substrates, reduce costs further.
(2) the silicon carbide epitaxial layers quality that obtains of chemical Vapor deposition process is often higher, and can ensure that growth velocity and doping control faster, be very suitable for the growth of high quality silicon carbide epitaxial layers-graphene composite film, also can obtain the carbide-graphite alkene heterofilm of different doping type simultaneously.
(3) the inventive method has cast out the complex steps that then hydrogen etching substrate surface makes up surface silicon enrichment, obtains high-quality few layer graphene composite bed.
Accompanying drawing explanation
Fig. 1 a is the surperficial two-dimensional appearance test pattern of atomic force microscope (AFM) of silicon carbide epitaxial layers of the present invention; Fig. 1 b is AFM the topography analyzer figure.
Fig. 2 is the X-ray photoelectron spectroscopic analysis figure of epitaxial silicon carbide-graphene composite film of the present invention.
Fig. 3 a is the Raman spectrogram of epitaxial silicon carbide-graphene composite film of the present invention; Fig. 3 b is the Raman spectroscopy scans image of epitaxial silicon carbide-graphene composite film of the present invention.
Embodiment
Below, will elaborate to the present invention in conjunction with specific embodiments.
Embodiment 1:
The substrate of epitaxial silicon carbide-graphene composite film that the present embodiment provides is the supine 4H-SiC of silicon, and concrete implementation step is as follows:
Step one: first adopt standard RCA clean method (a kind of wet chemical cleans method) to carry out cleaning pre-treatment described substrate, to eliminate oxide on surface and other impurity particle.
Then pretreated substrate is placed in high temperature chemical vapor deposition reaction (ChemicalVaporDeposition the is called for short CVD) cavity of induction heating, first vacuumizes, make Absolute truth reciprocal of duty cycle higher than 10
-4pa.Continue to pass into the H that flow is 7slm
2, utilize H
2etching removes oxide on surface and surface scratch.Meanwhile, cavity temperature is progressively risen to 1600 DEG C from room temperature by heating cavity.10 minutes are kept as the pregrown stage at 1600 DEG C.
Then keep said temperature and pressure, pass into SiH
4and C
3h
8, flow is respectively the growth that 9sccm and 2sccm carries out silicon carbide epitaxial layers.React after 60 minutes, the temperature of described chemical vapor deposition chamber body is down to 1000 DEG C, pass into flow is that the Ar of 1slm protects simultaneously, now forms the SiC epitaxial layer of 2 ~ 10 micron thickness at substrate surface.Atomic force microscope is adopted to characterize the surface topography quality of silicon carbide epitaxial layers, as shown in Figure 1.Wherein, Fig. 1 a can find out after silicon carbide epitaxy layer growth, and the surface topography of SiC starts to become orderly, forms well-regulated step striped, compares the growth being conducive to Graphene.Fig. 1 b can find out, the step of SiC rises and falls at about 10nm.By AFM software analysis, the root mean square roughness rate of surface of SiC is 2.4nm.Compared with the surface of SiC etched with hydrogen, better effects if.
Step 2: continuing to pass into flow in chemical vapor deposition chamber body is that the Ar of 1slm protects; adjustment pressure remains on 5Torr and (is equivalent to 760 mmhg pressures for reference standard with a normal atmosphere; 1Torr is the barometric point of 1/760 mmhg); then staged intensification is carried out to described chemical vapor deposition chamber body, be heated to the scope of 1300 ~ 1550 DEG C from 1000 DEG C.Concrete operations are: first described cavity temperature is risen to 1100 DEG C from 1000 DEG C, stablize 10 minutes; Subsequently cavity temperature is risen to 1200 DEG C from 1100 DEG C, and keep 10 minutes; Again cavity temperature is risen to 1550 DEG C from 1200 DEG C, and keep 30 minutes.Wherein, Fig. 3 a is the Raman spectrum of the Graphene of direct heteroepitaxial growth after epitaxy 4H-SiC, and the growth temperature after data all carried out normalized is respectively peak value when 1300 DEG C, 1450 DEG C and 1550 DEG C.Can find out, 1300 DEG C time, Raman (Raman) spectrum does not have obvious G peak and 2D peak, illustrates and substrate does not also have Graphene to be formed.When temperature is elevated to about 1450 DEG C, there is Graphene significantly to be formed, show as and occurred G peak (1587cm simultaneously
-1) and 2D (2695cm
-1) peak.D peak (1344cm
-1) show more by force to there is impurity or defect in Graphene crystalline network.Along with temperature be increased to 1550 DEG C further time, the G peak of Graphene and 2D peak-to-peak signal are more obvious, show to affect more and more less by SiC substrate.D peak is fainter shows that defect struchures is less.Fig. 3 b is the Raman 2D peak scanning imagery figure at 1550 DEG C of extending and growing graphenes, and scope is 25 μm × 25 μm, and stepping is 0.5 μm × 0.5 μm.Can find out that in scanning imagery, big area color is more consistent, show that the Graphene number of plies is comparatively even, and the monocrystalline area of the more explanation in the border of centre SiC epitaxial graphene be less.So in staged temperature-rise period, the preferred control temperature of final stage warming temperature is more than 1450 DEG C; Further, temperature is higher, and impurity and the lattice imperfection of Graphene are less, and the quality of Graphene is also higher.
Through staged temperature-rise period, silicon carbide epitaxial layers carries out a series of reconstruct, and finally Temperature fall under Ar protection, obtains the stable Graphene composite bed being formed in substrate surface, when described cavity temperature is reduced to after 1000 DEG C, closes Ar input; After described cavity temperature is reduced to room temperature, passing into Ar to recovering atmospheric pressure to when described cavity, opening epitaxial silicon carbide-graphene composite film product that cavity takes out the present embodiment acquisition.
Adopt the formation (see Fig. 2) of x-ray photoelectron power spectrum checking Graphene composite bed, concrete operations are: by the C (1s) of Graphene composite bed sample with combine the graph of a relation of energy and curve A carries out matching, obtain B, C, D peak.D peak (283.5eV) comes from SiC substrate peak.High combine that to locate C peak (284.5eV) close with graphite C-sp2 key position, so C peak is the composition of Graphene, thus demonstrates further and can obtain Graphene with this experimental technique.B peak (284.9eV) combines can the position of position closely diamond C-sp3 key, may be buffer layer carbon atom.
Adopt Raman spectrum to verify that epitaxial silicon carbide-graphene composite film that the present embodiment obtains has good crystal mass, the number of plies of Graphene composite bed controls below 4 layers, and has good homogeneity (see Fig. 3).
Embodiment 2:
The substrate of the epitaxial silicon carbide that the present embodiment provides-Graphene heterofilm is Al
2o
3, concrete implementation step is as follows:
Step one: first adopt standard RCA clean method to carry out cleaning pre-treatment described substrate, to eliminate oxide on surface and other impurity particle.
Pretreated substrate being placed in molecular beam epitaxy (MBE) growth a layer thickness is that the AlN film of 10nm is as buffer layer.Then there is the substrate of buffer layer to be placed in the high temperature CVD stove of induction heating growth, first vacuumize, make Absolute truth reciprocal of duty cycle higher than 10
-4pa.Continue the H passing into 9slm
2, utilize H
2etching removes oxide on surface and surface scratch.Cavity temperature is progressively risen to 1600 DEG C from room temperature, at 1600 DEG C, keeps 10 minutes as the pregrown stage.
Then SiH is passed into
4and C
3h
8, flow is respectively the growth that 10sccm and 3sccm carries out silicon carbide epitaxial layers.React after 60 minutes, the temperature of described chemical vapor deposition chamber body is down to 1000 DEG C, pass into flow is that the Ar of 1slm protects simultaneously, now forms the SiC epitaxial layer of 2 ~ 10 micron thickness at substrate surface.
Step 2: continuing to pass into flow in chemical vapor deposition chamber body is that the Ar of 2slm protects, and adjustment pressure remains on 10Torr, then carries out staged intensification to described chemical vapor deposition chamber body, is heated to 1500 DEG C from 1000 DEG C.Concrete operations are: first described cavity temperature is risen to 1100 DEG C from 1000 DEG C, stablize 10 minutes; Subsequently cavity temperature is risen to 1200 DEG C from 1100 DEG C, and keep 10 minutes; Again cavity temperature is risen to 1500 DEG C from 1200 DEG C, and keep 40 minutes.Through staged temperature-rise period, silicon carbide epitaxial layers carries out a series of reconstruct, and finally Temperature fall under Ar protection, obtains the stable Graphene composite bed being formed in substrate surface, when described cavity temperature is reduced to after 1000 DEG C, closes Ar input; After described cavity temperature is reduced to room temperature, passing into Ar to recovering atmospheric pressure to when described cavity, opening epitaxial silicon carbide-Graphene heterofilm product that cavity takes out the present embodiment acquisition.
Adopt atomic force microscope to characterize the surface topography quality of epitaxial silicon carbide, adopt formation and crystal mass, the number of plies and the homogeneity of x-ray photoelectron power spectrum and Raman spectrum checking Graphene.
The object of the present invention is to provide a kind of method of growing silicon carbide extension-Graphene compound (heterogeneous) film continuously.The method not exclusively can depend on expensive monocrystal SiC base material, but adopts the induction heating high temperature CVD equipment of independent research, realizes the continuous growth of silicon carbide epitaxial layers-Graphene.The SiC epitaxial layer quality that CVD obtains is often higher, and can ensure that growth velocity and doping control faster, are very suitable for the growth of high quality silicon carbide epitaxial layers-Graphene Heterogeneous Composite film.This method has cast out the step that then hydrogen etching substrate surface makes up surface silicon enrichment in addition, obtains high-quality few layer graphene.
Although the present invention discloses as above with preferred embodiment; so itself and be not used to limit the present invention; there is in any art same city and know the knowledgeable; without departing from the spirit and scope of the present invention; when doing a little change and retouching, what therefore protection scope of the present invention defined when the scope depending on claim of the present invention is as the criterion.
Claims (7)
1. a preparation method for epitaxial silicon carbide-graphene composite film, it comprises the steps:
Step one: pretreated substrate is placed in chemical vapor deposition chamber body, the Absolute truth reciprocal of duty cycle controlling described chemical vapor deposition chamber body is greater than 10
-4handkerchief, at the silicon carbide epitaxial layers of described substrate surface growth 2 ~ 10 microns at 1500 ~ 1600 DEG C;
Step 2: the temperature controlling described chemical vapor deposition chamber body is reduced to 1000 DEG C; under protective atmosphere, from 1000 DEG C, 1600 DEG C are heated to described chemical vapor deposition chamber body; make described silicon carbide epitaxial layers STRUCTURE DECOMPOSITION and restructuring, obtain Graphene composite bed on the substrate.
2. preparation method according to claim 1, is characterized in that, described substrate is SiC.
3. preparation method according to claim 1, is characterized in that, also comprises: utilize molecular beam epitaxy to grow the thick buffer layer of 10 ~ 100nm on the substrate before described step one.
4. preparation method according to claim 3, is characterized in that, described substrate is GaN or Al
2o
3; Described buffer layer is AlN.
5. the preparation method according to claim 1 or 3, is characterized in that, under protective atmosphere, control described chemical vapor deposition chamber temperature in described step 2 is 1300 ~ 1600 DEG C.
6. the preparation method according to claim 1 or 3, is characterized in that, take staged to heat up to the heating of described chemical vapor deposition chamber body in described step 2, concrete operations are:
Control described chemical vapor deposition chamber temperature and be increased to 1100 DEG C, and keep 10 minutes;
Control described chemical vapor deposition chamber temperature and be increased to 1200 DEG C, and keep 10 minutes;
Control the rising of described chemical vapor deposition chamber temperature and reach 1300 ~ 1600 DEG C of scopes, and keep 30 ~ 50 minutes.
7. preparation method according to claim 6, is characterized in that, take staged to heat up to the heating of described chemical vapor deposition chamber body in described step 2, concrete operations are:
Control described chemical vapor deposition chamber temperature and be increased to 1100 DEG C, and keep 10 minutes;
Control described chemical vapor deposition chamber temperature and be increased to 1200 DEG C, and keep 10 minutes;
Control the rising of described chemical vapor deposition chamber temperature and reach 1450 ~ 1600 DEG C of scopes, and keep 30 ~ 50 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410392278.8A CN105441902B (en) | 2014-08-12 | 2014-08-12 | A kind of preparation method of epitaxial silicon carbide graphene composite film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410392278.8A CN105441902B (en) | 2014-08-12 | 2014-08-12 | A kind of preparation method of epitaxial silicon carbide graphene composite film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105441902A true CN105441902A (en) | 2016-03-30 |
| CN105441902B CN105441902B (en) | 2018-03-20 |
Family
ID=55552524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410392278.8A Active CN105441902B (en) | 2014-08-12 | 2014-08-12 | A kind of preparation method of epitaxial silicon carbide graphene composite film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105441902B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106584968A (en) * | 2016-12-28 | 2017-04-26 | 镇江博昊科技有限公司 | Graphene composite material high in heat dissipation property |
| CN110648855A (en) * | 2019-09-26 | 2020-01-03 | 武汉理工大学 | Silicon carbide/graphene composite nano forest film material and preparation method and application thereof |
| CN110670138A (en) * | 2018-07-03 | 2020-01-10 | 中国科学院物理研究所 | Composite seed crystal for aluminum nitride single crystal growth and preparation method thereof |
| CN112771003A (en) * | 2018-06-05 | 2021-05-07 | 马德雷与马埃斯特拉天主教教皇大学 | SP3Bonded carbon material, method for producing same, and use thereof |
| CN112919456A (en) * | 2021-02-23 | 2021-06-08 | 南京大学 | Flat graphene growth method with uniform layer thickness and single-layer or double-layer graphene film |
| CN114314569A (en) * | 2022-01-10 | 2022-04-12 | 厦门大学 | Method for forming graphene on substrate |
| CN115537768A (en) * | 2022-12-01 | 2022-12-30 | 浙江晶越半导体有限公司 | Silicon carbide chemical vapor deposition method and multi-heat-source horizontal wall heating type reactor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5344796A (en) * | 1992-10-19 | 1994-09-06 | Samsung Electronics Co., Ltd. | Method for making polycrystalline silicon thin film |
| CN101492835A (en) * | 2008-01-24 | 2009-07-29 | 中国科学院半导体研究所 | Method for extension of plumbago alkene with ultra-thin hexagonal phase silicon carbide membrane on insulated substrate |
| CN102786049A (en) * | 2012-08-29 | 2012-11-21 | 电子科技大学 | System and method for preparing graphene by means of SiC thermal cracking |
| CN102886270A (en) * | 2011-07-19 | 2013-01-23 | 中国科学院物理研究所 | SiC nanocrystalline/graphene heterojunction and its preparation method and use |
-
2014
- 2014-08-12 CN CN201410392278.8A patent/CN105441902B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5344796A (en) * | 1992-10-19 | 1994-09-06 | Samsung Electronics Co., Ltd. | Method for making polycrystalline silicon thin film |
| CN101492835A (en) * | 2008-01-24 | 2009-07-29 | 中国科学院半导体研究所 | Method for extension of plumbago alkene with ultra-thin hexagonal phase silicon carbide membrane on insulated substrate |
| CN102886270A (en) * | 2011-07-19 | 2013-01-23 | 中国科学院物理研究所 | SiC nanocrystalline/graphene heterojunction and its preparation method and use |
| CN102786049A (en) * | 2012-08-29 | 2012-11-21 | 电子科技大学 | System and method for preparing graphene by means of SiC thermal cracking |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106584968A (en) * | 2016-12-28 | 2017-04-26 | 镇江博昊科技有限公司 | Graphene composite material high in heat dissipation property |
| CN112771003A (en) * | 2018-06-05 | 2021-05-07 | 马德雷与马埃斯特拉天主教教皇大学 | SP3Bonded carbon material, method for producing same, and use thereof |
| CN112771003B (en) * | 2018-06-05 | 2024-04-05 | 马德雷与马埃斯特拉天主教教皇大学 | SP 3 Bonded carbon material, method for producing same, and use thereof |
| CN110670138A (en) * | 2018-07-03 | 2020-01-10 | 中国科学院物理研究所 | Composite seed crystal for aluminum nitride single crystal growth and preparation method thereof |
| CN110648855A (en) * | 2019-09-26 | 2020-01-03 | 武汉理工大学 | Silicon carbide/graphene composite nano forest film material and preparation method and application thereof |
| CN110648855B (en) * | 2019-09-26 | 2021-12-07 | 武汉理工大学 | Silicon carbide/graphene composite nano forest film material and preparation method and application thereof |
| CN112919456A (en) * | 2021-02-23 | 2021-06-08 | 南京大学 | Flat graphene growth method with uniform layer thickness and single-layer or double-layer graphene film |
| CN112919456B (en) * | 2021-02-23 | 2023-09-22 | 南京大学 | Flat graphene growth method with uniform layer thickness and single-layer or double-layer graphene film |
| CN114314569A (en) * | 2022-01-10 | 2022-04-12 | 厦门大学 | Method for forming graphene on substrate |
| CN114314569B (en) * | 2022-01-10 | 2024-01-09 | 厦门大学 | Method for forming graphene on substrate |
| CN115537768A (en) * | 2022-12-01 | 2022-12-30 | 浙江晶越半导体有限公司 | Silicon carbide chemical vapor deposition method and multi-heat-source horizontal wall heating type reactor |
| CN115537768B (en) * | 2022-12-01 | 2023-07-07 | 浙江晶越半导体有限公司 | Silicon carbide chemical vapor deposition method and multi-heat source horizontal wall heating type reactor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105441902B (en) | 2018-03-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105441902A (en) | Epitaxial silicon carbide-graphene composite film preparation method | |
| TWI698908B (en) | SiC composite substrate manufacturing method and semiconductor substrate manufacturing method | |
| CN102102220B (en) | Preparation method of graphene on diamond (111) surface | |
| JP4946264B2 (en) | Method for manufacturing silicon carbide semiconductor epitaxial substrate | |
| JP5316612B2 (en) | Method for manufacturing silicon carbide semiconductor epitaxial substrate | |
| US20100178234A1 (en) | Multilayer substrate and method for producing the same, diamond film and method for producing the same | |
| CN106835268A (en) | A kind of preparation method of group III-nitride substrate | |
| Kukushkin et al. | Plasma assisted molecular beam epitaxy of thin GaN films on Si (111) and SiC/Si (111) substrates: Effect of SiC and polarity issues | |
| WO2013013419A1 (en) | Method for preparing graphene nano belt on insulating substrate | |
| CN105731825B (en) | A method of preparing aluminium nitride film using Graphene glass low-cost large-area | |
| CN108101028A (en) | A kind of method that composition metal assisting growth graphene is utilized on 6H/4H-SiC silicon face | |
| CN104947184A (en) | Method for growing grapheme on epitaxy of large-diameter 4H/6H-SiC silicon surface substrate based on in-situ Si atmosphere action | |
| CN110911270A (en) | High-quality gallium oxide film and homoepitaxial growth method thereof | |
| Liu et al. | Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films | |
| JP5269414B2 (en) | Membrane manufacturing method, purified membrane manufacturing method and apparatus using atmospheric pressure hydrogen plasma | |
| CN110172732A (en) | The method for preparing nitride single crystal substrates using transition metal nitride sacrificial layer | |
| CN106517165A (en) | Method for growing graphene by metal-assisted internal/external carbon sources combination mode on 6H/4H-SiC silicon surface | |
| Wang et al. | Misorientation dependent epilayer tilting and stress distribution in heteroepitaxially grown silicon carbide on silicon (111) substrate | |
| CN106435723A (en) | Preparation method of epitaxially-growing silicon carbide-graphene film | |
| CN113089093B (en) | Method for forming diamond semiconductor structure | |
| CN104328390B (en) | A kind of preparation method of GaN/ diamond film composite sheet | |
| Hsiao et al. | Polycrystalline to single-crystalline InN grown on Si (111) substrates by plasma-assisted molecular-beam epitaxy | |
| CN108511322A (en) | A method of preparing GaN film in two-dimentional graphite substrate | |
| CN108183064B (en) | Pretreatment method for preparing graphene by pyrolyzing silicon carbide and for controllable step morphology of substrate | |
| Shin et al. | Effects of different annealing atmospheres on the surface and microstructural properties of ZnO thin films grown on p-Si (1 0 0) substrates |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |