CN110931629A - Structure for growth of aluminum nitride with high scandium-doped concentration - Google Patents

Structure for growth of aluminum nitride with high scandium-doped concentration Download PDF

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CN110931629A
CN110931629A CN201911266969.2A CN201911266969A CN110931629A CN 110931629 A CN110931629 A CN 110931629A CN 201911266969 A CN201911266969 A CN 201911266969A CN 110931629 A CN110931629 A CN 110931629A
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scandium
aluminum
nitride
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doping concentration
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尚正国
陈宇昕
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Chongqing University
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Abstract

The invention relates to a structure for growth of aluminum nitride with high scandium-doped concentration, and belongs to the technical field of electromechanics. This structure from the bottom up includes in proper order: the device comprises a silicon substrate, an adhesion layer, a lower electrode layer, an aluminum nitride seed layer, an aluminum scandium nitride seed layer with low scandium doping concentration and an aluminum scandium nitride piezoelectric layer with high scandium doping concentration. The high scandium-doped aluminum scandium nitride piezoelectric film grown by using the structure as a core preparation technology has good crystal growth quality, lower stress and higher piezoelectric coefficient, and a piezoelectric film device prepared on the basis of the high scandium-doped aluminum scandium nitride piezoelectric film has good performance; moreover, the multilayer seed layers are adopted to reduce the lattice adaptation between layers, improve the growth quality of the aluminum scandium nitride crystal and reduce the film stress.

Description

Structure for growth of aluminum nitride with high scandium-doped concentration
Technical Field
The invention belongs to the field of electromechanical technology, and relates to a structure for growth of aluminum nitride with high scandium-doped concentration.
Background
The scandium-doped aluminum nitride piezoelectric film has the characteristics of high sound velocity, high temperature resistance, stable performance, compatibility with a CMOS (complementary metal oxide semiconductor) process and the like, is a known piezoelectric film material with the highest piezoelectric coefficient, and is widely concerned at home and abroad. MEMS devices prepared by using scandium-doped aluminum nitride piezoelectric thin films as core technology have been widely used in the fields of sensors, resonators, energy collectors, and the like.
The scandium-doped aluminum nitride piezoelectric film with high scandium concentration prepared by taking a reactive magnetron sputtering method as a core technology can generate lattice distortion compared with a pure aluminum nitride crystal due to the existence of a large amount of scandium elements, so that the c-axis orientation of the grown film is poor, the stress of the film is high, and the piezoelectric coefficient of the film and the working performance of a device can be greatly reduced. Therefore, it is necessary to prepare the aluminum scandium nitride film with high scandium-doped concentration, which has good crystal growth quality, lower stress and high piezoelectric coefficient.
Disclosure of Invention
In view of the above, the present invention aims to provide a structure for growing aluminum nitride with high scandium doping concentration, based on which a high scandium doping concentration aluminum nitride piezoelectric thin film grows, the crystal growth quality is excellent, the stress is low, the piezoelectric coefficient is high, and the piezoelectric thin film device prepared on the basis has good performance.
In order to achieve the purpose, the invention provides the following technical scheme:
a structure for growing high scandium concentration doped aluminum nitride, which comprises the following components in sequence from bottom to top: the device comprises a silicon substrate, an adhesion layer, a lower electrode layer, an aluminum nitride seed layer, an aluminum scandium nitride seed layer with low scandium doping concentration and an aluminum scandium nitride piezoelectric layer with high scandium doping concentration.
Optionally, the adhesion layer is made of a titanium or aluminum nitride material.
Optionally, the lower electrode layer is made of Mo or Pt.
Optionally, the aluminum scandium nitride seed layer with low scandium doping concentration is aluminum scandium nitride with scandium content/aluminum content smaller than 1/3.
Optionally, the high scandium-doped aluminum nitride piezoelectric layer is aluminum scandium nitride with scandium content/aluminum content greater than 1/3.
The invention has the beneficial effects that:
1. the high scandium-doped aluminum scandium nitride piezoelectric film grown by taking the structure as a core preparation technology has good crystal growth quality, lower stress and higher piezoelectric coefficient, and a piezoelectric film device prepared on the basis of the structure has good performance;
2. a plurality of seed layers are adopted to reduce the lattice adaptation between layers, improve the growth quality of the aluminum scandium nitride crystal and reduce the stress of a film;
3. the bottom electrode is subjected to reverse sputtering cleaning etching, and irregular depressions are formed on the surface of the bottom electrode, so that the influence caused by lattice mismatch is reduced;
4. an adhesion layer is introduced between the bottom electrode and the silicon substrate, so that the adhesion between the aluminum scandium nitride film and the substrate is improved, and different adhesion layers can be respectively used for improving the film growth quality (the aluminum nitride adhesion layer) and the piezoelectric coefficient d33 measurement (the titanium adhesion layer);
5. the growth quality of the high scandium-doped aluminum scandium nitride piezoelectric film is indicated to be related to the seed layer components and the process parameters of magnetron sputtering.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention may be realized and attained by the means of the instrumentalities and combinations particularly pointed out hereinafter.
Drawings
For the purposes of promoting a better understanding of the objects, aspects and advantages of the invention, reference will now be made to the following detailed description taken in conjunction with the accompanying drawings in which:
FIG. 1 is a schematic cross-sectional view of a structure for the growth of aluminum scandium nitride with a high scandium doping concentration;
fig. 2 is a process flow diagram of a structure for the growth of aluminum scandium nitride with a high scandium doping concentration.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention. It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present invention in a schematic way, and the features in the following embodiments and examples may be combined with each other without conflict.
Wherein the showings are for the purpose of illustrating the invention only and not for the purpose of limiting the same, and in which there is shown by way of illustration only and not in the drawings in which there is no intention to limit the invention thereto; to better illustrate the embodiments of the present invention, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
The same or similar reference numerals in the drawings of the embodiments of the present invention correspond to the same or similar components; in the description of the present invention, it should be understood that if there is an orientation or positional relationship indicated by terms such as "upper", "lower", "left", "right", "front", "rear", etc., based on the orientation or positional relationship shown in the drawings, it is only for convenience of description and simplification of description, but it is not an indication or suggestion that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, the terms describing the positional relationship in the drawings are only used for illustrative purposes, and are not to be construed as limiting the present invention, and the specific meaning of the terms may be understood by those skilled in the art according to specific situations.
The invention aims to provide a novel structure for the growth of aluminum scandium nitride with high scandium-doped concentration, and the aluminum scandium nitride piezoelectric film with high scandium-doped concentration, which grows on the basis of the structure, has the advantages of excellent crystal growth quality, lower stress and high piezoelectric coefficient, and the piezoelectric film device prepared on the basis has good performance.
The invention adopts a pulse direct current reactive magnetron sputtering mode to prepare the high scandium-doped concentration aluminum scandium nitride piezoelectric film, and in order to obtain the high scandium-doped concentration aluminum scandium nitride piezoelectric film with excellent crystal growth quality, lower stress and high piezoelectric coefficient, the following technical scheme can be adopted:
taking the growth of an aluminum scandium nitride piezoelectric film with high scandium doping concentration on a silicon-based substrate as an example, the silicon-based substrate mainly comprises a substrate Si, an adhesion layer, a lower electrode layer, an aluminum nitride seed layer, an aluminum scandium nitride seed layer with low scandium doping concentration and an aluminum scandium nitride piezoelectric layer with high scandium doping concentration. When the high scandium-doped aluminum scandium nitride piezoelectric film prepared by the structure grows, due to the fact that lattice mismatch between adjacent layers is small, and the bottom electrode is subjected to reverse sputtering treatment, the quality of the grown film can be greatly improved, meanwhile, stress of the film is reduced, and finally preparation of a high-performance piezoelectric film device is achieved.
The adhesion layer is made of a material with good bonding capacity with the surface of Si, such as Ti or AlN, if the adhesion layer is made of aluminum nitride, the crystallization quality of the bottom electrode can be further improved, and the performance of aluminum scandium nitride can be finally improved, if the substrate is made of low-resistance silicon and the adhesion layer is made of titanium, the structure can be directly used for measuring the piezoelectric coefficient d33 without graphical processing. The lower electrode is made of metal materials with small lattice coefficient mismatching degree with Si and AlN, such as Mo, Pt and the like, and is cleaned and etched in a reverse sputtering mode, the aluminum nitride seed layer is undoped aluminum nitride, the aluminum nitride seed layer with low scandium-doped concentration is aluminum scandium nitride with scandium content/aluminum content smaller than 1/3, and the aluminum nitride piezoelectric layer with high scandium-doped concentration is aluminum scandium nitride with scandium content/aluminum content larger than 1/3.
In order to obtain the aluminum scandium nitride piezoelectric film with excellent crystal growth quality, lower stress and high scandium-doped concentration and high piezoelectric coefficient, a multilayer composite structure is adopted, and the process parameters of magnetron sputtering are also depended.
As shown in fig. 1 to fig. 2, the structure for the growth of aluminum scandium nitride with high scandium doping concentration of the present invention uses a silicon substrate as a substrate material, and realizes the preparation of a device by an MEMS processing technology. It mainly comprises: a substrate material silicon substrate, an adhesion layer (titanium or undoped aluminum nitride), a lower electrode layer (molybdenum, platinum and other metals with small lattice mismatch with the aluminum nitride), a seed layer 1 (undoped aluminum nitride), a seed layer 2 (aluminum scandium nitride with scandium content/aluminum content less than 1/3) and a piezoelectric thin film layer (aluminum scandium nitride with scandium content/aluminum content more than 1/3). When the structure is applied to the growth of aluminum nitride with high scandium-doped concentration, the preparation process is as follows:
according to the process flow, the specific implementation mode is as follows:
(1) a substrate type N (100), a 4-inch silicon wafer, a thickness of 500um, a resistivity of less than 0.1 omega cm;
(2) growing an adhesion layer with the thickness of about 30-80 nm, wherein the material is titanium or aluminum nitride and the like which are tightly combined with silicon, and growing a lower electrode with the thickness of about 50-200 nm, and the material is molybdenum or platinum and the like which are less in lattice adaptation with aluminum nitride;
(3) etching the surface of the lower electrode by adopting argon ion reverse sputtering;
(4) a seed layer 1 (pure aluminum nitride), a seed layer 2 (aluminum scandium nitride with scandium content/aluminum content less than 1/3) and a piezoelectric thin film layer (aluminum scandium nitride with scandium content/aluminum content greater than 1/3) are grown in sequence by adopting a pulse direct current magnetron sputtering mode, and the thicknesses of the seed layer 1 (pure aluminum nitride), the seed layer 2 (aluminum scandium nitride with scandium content/aluminum content less than 1/3) and the piezoelectric thin film layer (aluminum scandium nitride with scandium content/aluminum content greater than 35.
Finally, the above embodiments are only intended to illustrate the technical solutions of the present invention and not to limit the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions, and all of them should be covered by the claims of the present invention.

Claims (5)

1. A structure for growing aluminum nitride with high scandium doping concentration is characterized in that:
from the bottom up includes in proper order: the device comprises a silicon substrate, an adhesion layer, a lower electrode layer, an aluminum nitride seed layer, an aluminum scandium nitride seed layer with low scandium doping concentration and an aluminum scandium nitride piezoelectric layer with high scandium doping concentration.
2. The structure of claim 1, wherein the structure is used for growing aluminum nitride with high scandium doping concentration, and is characterized in that: the adhesion layer is made of titanium or aluminum nitride material.
3. The structure of claim 1, wherein the structure is used for growing aluminum nitride with high scandium doping concentration, and is characterized in that: the lower electrode layer is made of Mo or Pt.
4. The structure of claim 1, wherein the structure is used for growing aluminum nitride with high scandium doping concentration, and is characterized in that: the aluminum scandium nitride seed layer with low scandium doping concentration is aluminum scandium nitride with scandium content/aluminum content smaller than 1/3.
5. The structure of claim 1, wherein the structure is used for growing aluminum nitride with high scandium doping concentration, and is characterized in that: the high scandium-doped aluminum nitride piezoelectric layer is aluminum scandium nitride with scandium content/aluminum content larger than 1/3.
CN201911266969.2A 2019-12-11 2019-12-11 Structure for growth of aluminum nitride with high scandium-doped concentration Pending CN110931629A (en)

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Cited By (10)

* Cited by examiner, † Cited by third party
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CN111485207A (en) * 2020-06-08 2020-08-04 福建阿石创新材料股份有限公司 Fine-grain homogeneous high-scandium-content aluminum-scandium alloy sintering target material and preparation method and application thereof
CN111599915A (en) * 2020-05-28 2020-08-28 重庆大学 Seed layer structure-based preparation method of high-performance aluminum scandium nitride and product thereof
CN111636054A (en) * 2020-06-08 2020-09-08 福建阿石创新材料股份有限公司 Preparation method of aluminum-scandium alloy sputtering target material
CN111740004A (en) * 2020-08-10 2020-10-02 上海陛通半导体能源科技股份有限公司 Aluminum nitride-based film structure, semiconductor device and preparation method thereof
CN112202415A (en) * 2020-09-25 2021-01-08 杭州星阖科技有限公司 Manufacturing process of bulk acoustic wave resonator and bulk acoustic wave resonator
CN113438588A (en) * 2021-07-28 2021-09-24 成都纤声科技有限公司 Micro-electro-mechanical system microphone, earphone and electronic equipment
CN113584443A (en) * 2021-06-30 2021-11-02 武汉大学 AlN/AlScN nano composite piezoelectric coating for high-temperature-resistant fastener and preparation method thereof
CN114866063A (en) * 2022-07-11 2022-08-05 深圳新声半导体有限公司 Novel piezoelectric layer and bulk acoustic wave filter
CN114937721A (en) * 2022-07-21 2022-08-23 江西兆驰半导体有限公司 Silicon substrate GaN-based LED epitaxial wafer and preparation method thereof
IL283142A (en) * 2021-05-12 2022-12-01 Yeda Res & Dev Process for the preparation of oriented aluminum scandium nitride films

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