CN111262543A - Scandium-doped aluminum nitride lamb wave resonator and preparation method thereof - Google Patents
Scandium-doped aluminum nitride lamb wave resonator and preparation method thereof Download PDFInfo
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- CN111262543A CN111262543A CN202010250529.4A CN202010250529A CN111262543A CN 111262543 A CN111262543 A CN 111262543A CN 202010250529 A CN202010250529 A CN 202010250529A CN 111262543 A CN111262543 A CN 111262543A
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 68
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- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 15
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- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0428—Modification of the thickness of an element of an electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0435—Modification of the thickness of an element of a piezoelectric layer
Abstract
The invention discloses a scandium-doped aluminum nitride lamb wave resonator and a preparation method thereof, and the structure comprises the following steps: the device comprises a monocrystalline substrate layer, a bonding material, a piezoelectric layer and interdigital electrodes, wherein the piezoelectric layer is scandium-doped monocrystalline aluminum nitride, and the interdigital electrodes comprise top electrodes arranged on the upper surface of the piezoelectric layer and bottom electrodes arranged on the bottom surface of the piezoelectric layer. In addition, scandium-doped single-crystal aluminum nitride is adopted for the piezoelectric layer to replace the aluminum nitride material of the existing lamb wave resonator, so that the electromechanical coupling coefficient of the lamb wave resonator is increased, the bandwidth is widened, and the transmission speed of the lamb wave resonator is increased.
Description
Technical Field
The invention relates to the technical field of resonators, in particular to a scandium-doped aluminum nitride lamb wave resonator and a preparation method thereof.
Background
In recent years, Lamb Wave Resonators (LWR) which have been widely studied have specific acoustic characteristics and resonant structures, and are increasingly becoming more satisfactory intermediate frequency devices, and the frequency adjustment is realized by changing the spacing between interdigital electrodes, so that the preparation of a plurality of frequency filters on the same wafer is realized.
However, the existing lamb wave resonator has the following disadvantages: (1) the substrate layer and the piezoelectric layer of the existing lamb wave resonator are both prepared from polycrystalline materials, and the polycrystalline materials are rough in appearance and not smooth enough, so that the insertion loss is high easily; (2) AlN materials adopted by the existing lamb wave resonator have small electromechanical coupling coefficients, so that the lamb wave resonator is easy to have narrow bandwidth, and the transmission speed of the lamb wave resonator is low.
Disclosure of Invention
The invention aims to provide a scandium-doped aluminum nitride lamb wave resonator and a preparation method thereof, and solves the problems of small electromechanical coupling coefficient, narrow bandwidth and large insertion loss of the existing lamb wave resonator.
The invention is realized by the following technical scheme:
the utility model provides a scandium doping aluminium nitride lamb wave syntonizer, includes the single crystal substrate layer, the substrate layer is provided with a recess, install bonding material on the step face of recess, the substrate layer passes through bonding material and piezoelectric layer bonding, interdigital electrode is installed to the piezoelectric layer, interdigital electrode is including installing the top electrode of piezoelectric layer upper surface with install the bottom electrode of piezoelectric layer bottom surface, the positive negative pole of top electrode sets up in turn, the positive negative pole of bottom electrode with the positive negative pole of top electrode sets up in opposite directions, the piezoelectric layer is scandium doping single crystal aluminium nitride.
As a further alternative of the scandium-doped aluminum nitride lamb wave resonator, the thickness of the piezoelectric layer is 500nm to 5 um.
As a further optional scheme of the scandium-doped aluminum nitride lamb wave resonator, the weight fraction of scandium in the single-crystal scandium-doped aluminum nitride is 0-50%.
As a further alternative of the scandium-doped aluminum nitride lamb wave resonator, the bonding material is one or more of Ti/Au, Cr/Au, silicon oxide, polycrystalline silicon, single crystal silicon, and polyimide.
As a further alternative to the scandium-doped aluminum nitride lamb wave resonator, the interdigital electrode is a metallic material including Pt, Mo, W, Ti, Al, Au, and Ag.
As a further alternative of the scandium-doped aluminum nitride lamb wave resonator, the electrode distance between electrodes on the same side of the interdigital electrode is 500 nm-5 um, the electrode width is 500 nm-3 um, and the electrode length is 48 um-300 um.
As a further alternative of the scandium-doped aluminum nitride lamb wave resonator, the thickness of the top electrode is 100nm to 1000nm, and the thickness of the bottom electrode is 100nm to 1000 nm.
A preparation method of a scandium-doped aluminum nitride lamb wave resonator comprises the following steps:
step S1, cleaning the double-polished high-resistance silicon wafer and carrying out rotary drying;
step S2, depositing single crystal aluminum nitride on the surface of the clean double-polished high-resistance silicon wafer;
step S3, scandium doping is carried out on the single crystal aluminum nitride to form a piezoelectric layer;
step S4, depositing a metal electrode on the piezoelectric layer and stripping to form a bottom electrode;
step S5, depositing bonding material on the surface of the silicon wafer by using a stripping process;
step S6, bonding the other single polished silicon wafer with the etched silicon cavity with the silicon wafer in the step S5 to form a bonding object;
step S7, thinning the silicon wafer of the deposited aluminum nitride in the bonding object of the step S6, and removing the rest silicon wafer by wet etching;
and step S8, depositing a top electrode on the surface of the aluminum nitride and patterning to finish the preparation.
As a further alternative to the preparation method of the scandium-doped aluminum nitride lamb wave resonator, the method for depositing the single-crystal aluminum nitride in step S2 is a metal organic chemical vapor deposition method.
As a further alternative of the preparation method of the scandium-doped aluminum nitride lamb wave resonator, in step S3, aluminum nitride is doped by ion implantation or diffusion.
The invention has the beneficial effects that:
the invention adopts single crystal materials as the substrate layer and the piezoelectric layer to replace polycrystalline materials adopted by the existing lamb wave resonator, so that the surface of the prepared lamb wave resonator is smoother, the insertion loss of the lamb wave resonator is reduced, and the problem of large insertion loss of the existing lamb wave resonator is solved.
Drawings
FIG. 1 is a schematic diagram of a scandium-doped aluminum nitride lamb wave resonator according to the invention;
FIG. 2 is a cross-sectional view of a piezoelectric material and a bottom electrode fabricated on a silicon wafer in a scandium-doped aluminum nitride lamb wave resonator in accordance with the present invention;
FIG. 3 is a schematic diagram of the bonding of two silicon wafers in a scandium-doped aluminum nitride lamb wave resonator in accordance with the present invention;
fig. 4 is a flowchart of a method for manufacturing a scandium-doped aluminum nitride lamb wave resonator according to the present invention.
Description of reference numerals: 1. a monocrystalline substrate layer; 2. a groove; 3. a recess step surface; 4. a bonding material; 5. a bottom electrode; 6. a piezoelectric layer; 7. a top electrode; 8. and (3) a silicon wafer.
Detailed Description
The invention will be described in detail with reference to the drawings and specific embodiments, which are illustrative of the invention and are not to be construed as limiting the invention.
As shown in fig. 1 to 3, a scandium-doped aluminum nitride lamb wave resonator comprises a monocrystalline substrate layer 1, wherein the substrate layer 1 is provided with a groove 2, a bonding material 4 is installed on a step surface 3 of the groove, the substrate layer 1 is bonded with a piezoelectric layer 6 through the bonding material 4, the piezoelectric layer 6 is provided with interdigital electrodes, the interdigital electrodes comprise top electrodes 7 installed on the upper surface of the piezoelectric layer 6 and bottom electrodes 5 installed on the bottom surface of the piezoelectric layer 6, the positive and negative electrodes of the top electrodes 7 are alternately arranged, the positive and negative electrodes of the bottom electrodes 5 are oppositely arranged with the positive and negative electrodes of the top electrodes 7, and the piezoelectric layer 6 is scandium-doped monocrystalline aluminum nitride.
Specifically, in this embodiment, the thickness of the piezoelectric layer 6 is 500nm to 5 um.
Specifically, in the embodiment of the present invention, the weight fraction of scandium in the scandium-doped monocrystalline aluminum nitride is 0 to 50%.
Specifically, in this embodiment, the bonding material 4 is one or more of Ti/Au, Cr/Au, silicon oxide, polysilicon, monocrystalline silicon, and polyimide.
Specifically, in this embodiment, the interdigital electrode is made of a metal material, and the metal material includes Pt, Mo, W, Ti, Al, Au, and Ag.
Specifically, in the embodiment, the electrode pitch of the electrodes on the same side of the interdigital electrode is 500nm to 5um, the electrode width is 500nm to 3um, and the electrode length is 48um to 300 um; it should be noted that the same side electrode of the interdigital electrode represents the top electrode 7 and the bottom electrode 5.
Specifically, in the embodiment of the present invention, the thickness of the top electrode 7 is 100nm to 1000nm, and the thickness of the bottom electrode 5 is 100nm to 1000 nm.
In this embodiment, through adopting single crystal material as substrate layer and piezoelectric layer, replace the polycrystalline material that current lamb wave resonator adopted, can make the lamb wave resonator surface that forms of preparation more smooth, reduce the insertion loss of lamb wave resonator, the big problem of current lamb wave resonator insertion loss has been solved, furthermore, still adopt scandium doping single crystal aluminium nitride through the piezoelectric layer, replace the aluminium nitride material of current lamb wave resonator, make the electromechanical coupling coefficient of lamb wave resonator increase, thereby make the bandwidth widen, improve the transmission speed of lamb wave resonator.
It should be noted that the arrangement of the positive and negative electrodes of the bottom electrode in opposite directions to the positive and negative electrodes of the top electrode means that when the top electrode is arranged on the upper surface of the piezoelectric layer as a positive electrode, the position of the bottom electrode corresponding to the bottom surface of the piezoelectric layer is arranged as a negative electrode, and if the top electrode is arranged on the upper surface of the piezoelectric layer as a negative electrode, the position of the bottom electrode corresponding to the bottom surface of the piezoelectric layer is arranged as a positive electrode; in addition, a cavity is formed by the single crystal substrate layer, the bonding material, the piezoelectric layer and the bottom electrode, the cavity is used for reflecting sound waves, and the depth of the cavity is 2-30 um; in addition, the mechanical-electrical coupling coefficient of the lamb-mode resonator is up to 30% due to the high-concentration scandium doping, and the lamb-mode resonator is expected to be applied to high-bandwidth and low-loss filters; in addition, the frequency of the filter can be adjusted by changing the distance between the interdigital electrodes, so that the filter or the duplexer with different frequencies can be prepared on the same wafer.
As shown in fig. 4, a method for preparing a scandium-doped aluminum nitride lamb wave resonator includes the following steps:
step S1, cleaning the double-polished high-resistance silicon wafer 8 and carrying out rotary drying;
step S2, depositing single crystal aluminum nitride on the surface of the clean double-polished high-resistance silicon wafer;
step S3, scandium doping the single crystal aluminum nitride to form the piezoelectric layer 6;
step S4, depositing a metal electrode on the piezoelectric layer 6 and stripping to form a bottom electrode 5;
step S5, depositing bonding material 4 on the surface of the silicon wafer by using a stripping process;
step S6, bonding the other single polished silicon wafer with the etched silicon cavity with the silicon wafer in the step S5 to form a bonding object;
step S7, thinning the silicon wafer of the deposited aluminum nitride in the bonding object of the step S6, and removing the rest silicon wafer by wet etching;
and step S8, depositing a top electrode on the surface of the aluminum nitride and patterning to finish the preparation.
Specifically, in this embodiment, the method for depositing the single crystal aluminum nitride in step S2 is a metal organic chemical vapor deposition method.
Specifically, in this embodiment, in step S3, the aluminum nitride is doped by ion implantation or diffusion.
Example 1:
this embodiment provides a scandium-doped AlN lamb wave resonator, and as shown in fig. 1-3, the filter includes scandium-doped aluminum nitride 102, a bottom electrode 103, a high-resistance silicon substrate 105, and a top electrode 106.
The bottom electrode and the top electrode are made of Mo metal materials, and the piezoelectric material is scandium-doped AlN.
The thickness of bottom electrode is 200nm, and the thickness of top electrode is 960nm, and the thickness of scandium doping AlN is 1um, and the interval of top interdigital electrode is 2um, and the interval of bottom interdigital electrode is 2um, and the width of top and bottom interdigital electrode is 1um, and the length of interdigital electrode is 96um, and the silicon cavity degree of depth after the bonding is 3 um.
The present embodiment also provides a method for preparing the scandium-doped lamb wave resonator, which includes the following steps:
(1) selecting a Si substrate as an epitaxial substrate 101, and soaking and drying the epitaxial substrate by using a mixed solution of acetone, sulfuric acid and hydrogen peroxide in sequence;
(2) depositing 1um single crystal aluminum nitride 102 on a silicon substrate 101 by a metal organic chemical vapor deposition method, wherein trimethyl aluminum and ammonia are used as reaction gases, hydrogen is used as a carrier gas, and the temperature of the substrate is about 1200 ℃;
(3) scandium doping is carried out on the single crystal aluminum nitride by ion implantation, the doping concentration is about 30%, and then annealing is carried out to reduce the influence of the ion implantation on the electrical property of the aluminum nitride;
(4) carrying out exposure and development after spin-coating photoresist on the surface of the aluminum nitride, depositing a 200nm metal molybdenum electrode 103 by magnetron sputtering, and then placing the electrode in a degumming solution for degumming;
(5) respectively depositing Ti and Au 104 with the thickness of 40nm and 400nm by an evaporation method, and then stripping redundant metal Ti and Au;
(6) etching the polysilicon by using reactive ion etching or inductively coupled plasma, wherein the depth of the silicon cavity is 3 um;
(7) as shown in fig. 2, after aligning the two wafers 105 and 101, gold silicon bonding is performed at about 360 degrees, then the silicon substrate 101 is thinned to about 50um, and then the silicon substrate is placed in a potassium hydroxide solution for wet etching, where devices need to be reasonably protected;
(8) and depositing a 960nm top electrode 106 on the surface of the aluminum nitride, and removing redundant metal materials by wet etching to finish the preparation.
In this embodiment, the scandium-doped aluminum nitride lamb wave resonator is prepared by cleaning and drying a double-sided polished high-resistance wafer, depositing a layer of single-crystal aluminum nitride by a metal organic chemical vapor deposition method, preparing a metal interdigital electrode on the surface of the aluminum nitride by a stripping process, depositing a Ti/Au bonding material on the surface of the device, performing gold-silicon bonding on another cleaned and dried single-polished silicon wafer and the wafer, thinning the wafer on which the aluminum nitride is deposited, removing the remaining silicon wafer by wet etching, depositing a metal electrode on the surface of the aluminum nitride, and performing patterned etching; in addition, by adopting single crystal materials as the substrate layer and the piezoelectric layer to replace polycrystalline materials adopted by the existing lamb wave resonator, the surface of the prepared lamb wave resonator is smoother, the insertion loss of the lamb wave resonator is reduced, and the problem of large insertion loss of the existing lamb wave resonator is solved; in addition, scandium-doped single crystal aluminum nitride is adopted for the piezoelectric layer to replace the aluminum nitride material of the existing lamb wave resonator, so that the electromechanical coupling coefficient of the lamb wave resonator is increased, the bandwidth is widened, and the transmission speed of the lamb wave resonator is improved.
It should be noted that the bonding manner is not limited to the gold-silicon bonding in embodiment 1, and may also be silicon oxide-silicon oxide bonding, polysilicon-polysilicon bonding, polysilicon-silicon oxide bonding, glass-silicon anodic bonding, and organic adhesive bonding; in addition, the single crystal aluminum nitride prepared by the metal organic chemical vapor deposition method improves the crystal quality, reduces the defect density and can improve the maximum power borne by the resonator.
The technical solutions provided by the embodiments of the present invention are described in detail above, and the principles and embodiments of the present invention are explained herein by using specific examples, and the descriptions of the embodiments are only used to help understanding the principles of the embodiments of the present invention; meanwhile, for a person skilled in the art, according to the embodiments of the present invention, there may be variations in the specific implementation manners and application ranges, and in summary, the content of the present description should not be construed as a limitation to the present invention.
Claims (10)
1. The utility model provides a scandium doping aluminium nitride lamb wave resonator, its characterized in that, a scandium doping aluminium nitride lamb wave resonator, includes single crystal substrate layer (1), substrate layer (1) is provided with a recess (2), install bonding material (4) on the step face (3) of recess, substrate layer (1) passes through bonding material (4) and piezoelectric layer (6) bonding, interdigital electrode is installed in piezoelectric layer (6), interdigital electrode is including installing top electrode (7) of piezoelectric layer (6) upper surface and installing bottom electrode (5) of piezoelectric layer (6) bottom surface, the positive negative pole of top electrode (7) sets up in turn, the positive negative pole of bottom electrode (5) with the positive negative pole of top electrode (7) sets up in opposite directions, piezoelectric layer (6) are scandium doping single crystal aluminium nitride.
2. The scandium-doped aluminum nitride lamb wave resonator according to claim 1, wherein: the thickness of the piezoelectric layer (6) is 500 nm-5 um.
3. The scandium-doped aluminum nitride lamb wave resonator according to claim 2, wherein: the weight fraction of scandium in the scandium-doped single crystal aluminum nitride is 0-50%.
4. The scandium-doped aluminum nitride lamb wave resonator according to claim 3, wherein: the bonding material (4) is one or more of Ti/Au, Cr/Au, silicon oxide, polycrystalline silicon, monocrystalline silicon and polyimide.
5. The scandium-doped aluminum nitride lamb wave resonator according to claim 4, wherein: the metal material includes Pt, Mo, W, Ti, Al, Au and Ag.
6. The scandium-doped aluminum nitride lamb wave resonator according to claim 5, wherein: the electrode interval of interdigital electrode same side electrode is 500nm ~ 5um, and the electrode width is 500nm ~ 3um, and electrode length is 48um ~ 300 um.
7. The scandium-doped aluminum nitride lamb wave resonator according to claim 6, wherein: the thickness of the top electrode (7) is 100 nm-1000 nm, and the thickness of the bottom electrode (5) is 100 nm-1000 nm.
8. The method of manufacturing a scandium-doped aluminum nitride lamb wave resonator according to any one of claims 1 to 7, comprising the steps of:
step S1, cleaning the double-polished high-resistance silicon wafer (8) and carrying out rotary drying;
step S2, depositing single crystal aluminum nitride on the surface of the clean double-polished high-resistance silicon wafer;
step S3, scandium is doped into the single crystal aluminum nitride to form a piezoelectric layer (6);
step S4, depositing a metal electrode on the piezoelectric layer (6) and stripping to form a bottom electrode (5);
step S5, depositing bonding material (4) on the surface of the silicon wafer by using a stripping process;
step S6, bonding the other single polished silicon wafer with the etched silicon cavity with the silicon wafer in the step S5 to form a bonding object;
step S7, thinning the silicon wafer of the deposited aluminum nitride in the bonding object of the step S6, and removing the rest silicon wafer by wet etching;
and step S8, depositing a top electrode on the surface of the aluminum nitride and patterning to finish the preparation.
9. The method of claim 8, wherein the scandium-doped aluminum nitride lamb wave resonator comprises: the method for depositing the single crystal aluminum nitride in the step S2 is a metal organic chemical vapor deposition method.
10. The method of manufacturing a scandium-doped aluminum nitride lamb wave resonator according to claim 9, wherein: the step S3 is to dope the aluminum nitride by ion implantation or diffusion.
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| CN202010250529.4A CN111262543A (en) | 2020-04-01 | 2020-04-01 | Scandium-doped aluminum nitride lamb wave resonator and preparation method thereof |
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| CN202010250529.4A CN111262543A (en) | 2020-04-01 | 2020-04-01 | Scandium-doped aluminum nitride lamb wave resonator and preparation method thereof |
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| CN202010250529.4A Withdrawn CN111262543A (en) | 2020-04-01 | 2020-04-01 | Scandium-doped aluminum nitride lamb wave resonator and preparation method thereof |
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| CN112260658A (en) * | 2020-10-16 | 2021-01-22 | 广东广纳芯科技有限公司 | Lamb wave resonator and manufacturing method thereof |
| CN112600529A (en) * | 2020-12-18 | 2021-04-02 | 广东广纳芯科技有限公司 | Lamb wave resonator with POI structure |
| CN112615603A (en) * | 2020-12-18 | 2021-04-06 | 广东广纳芯科技有限公司 | Scandium-doped aluminum nitride high-frequency resonator with POI structure and manufacturing method |
| CN112953441A (en) * | 2021-02-09 | 2021-06-11 | 广东广纳芯科技有限公司 | Resonator and method for manufacturing resonator |
| CN112953440A (en) * | 2021-02-09 | 2021-06-11 | 广东广纳芯科技有限公司 | Resonator and method for manufacturing resonator |
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| CN113285014A (en) * | 2021-05-14 | 2021-08-20 | 中国科学技术大学 | Single crystal doped film, piezoelectric film for acoustic wave resonator and preparation method thereof |
| CN114000199A (en) * | 2021-08-27 | 2022-02-01 | 深圳市汇芯通信技术有限公司 | Single crystal aluminum nitride film, manufacturing method thereof and manufacturing method of bulk acoustic wave filter |
| WO2022161135A1 (en) * | 2021-01-29 | 2022-08-04 | 诺思(天津)微系统有限责任公司 | Filter having scandium-doped aluminum nitride as piezoelectric layer and electronic device |
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| CN112260658A (en) * | 2020-10-16 | 2021-01-22 | 广东广纳芯科技有限公司 | Lamb wave resonator and manufacturing method thereof |
| CN112600529A (en) * | 2020-12-18 | 2021-04-02 | 广东广纳芯科技有限公司 | Lamb wave resonator with POI structure |
| CN112615603A (en) * | 2020-12-18 | 2021-04-06 | 广东广纳芯科技有限公司 | Scandium-doped aluminum nitride high-frequency resonator with POI structure and manufacturing method |
| CN112615603B (en) * | 2020-12-18 | 2024-02-09 | 广东广纳芯科技有限公司 | Scandium-doped aluminum nitride high-frequency resonator with POI structure and manufacturing method |
| WO2022161135A1 (en) * | 2021-01-29 | 2022-08-04 | 诺思(天津)微系统有限责任公司 | Filter having scandium-doped aluminum nitride as piezoelectric layer and electronic device |
| CN112953441B (en) * | 2021-02-09 | 2023-10-24 | 广东广纳芯科技有限公司 | Resonator and method for manufacturing resonator |
| CN112953441A (en) * | 2021-02-09 | 2021-06-11 | 广东广纳芯科技有限公司 | Resonator and method for manufacturing resonator |
| CN112953440A (en) * | 2021-02-09 | 2021-06-11 | 广东广纳芯科技有限公司 | Resonator and method for manufacturing resonator |
| CN112953440B (en) * | 2021-02-09 | 2023-10-24 | 广东广纳芯科技有限公司 | Resonator and method for manufacturing resonator |
| CN113210240A (en) * | 2021-03-23 | 2021-08-06 | 魔音智芯科技(深圳)有限公司 | Lamb wave device of double-sided interdigital transducer and preparation method thereof |
| CN113285014A (en) * | 2021-05-14 | 2021-08-20 | 中国科学技术大学 | Single crystal doped film, piezoelectric film for acoustic wave resonator and preparation method thereof |
| CN114000199B (en) * | 2021-08-27 | 2023-01-31 | 深圳市汇芯通信技术有限公司 | Single crystal aluminum nitride film, manufacturing method thereof and manufacturing method of bulk acoustic wave filter |
| CN114000199A (en) * | 2021-08-27 | 2022-02-01 | 深圳市汇芯通信技术有限公司 | Single crystal aluminum nitride film, manufacturing method thereof and manufacturing method of bulk acoustic wave filter |
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