CN110350079A - A kind of piezoelectric element and preparation method thereof and ultrasonic sensor - Google Patents
A kind of piezoelectric element and preparation method thereof and ultrasonic sensor Download PDFInfo
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- CN110350079A CN110350079A CN201910637203.4A CN201910637203A CN110350079A CN 110350079 A CN110350079 A CN 110350079A CN 201910637203 A CN201910637203 A CN 201910637203A CN 110350079 A CN110350079 A CN 110350079A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 24
- 229910052750 molybdenum Inorganic materials 0.000 claims description 21
- 239000011733 molybdenum Substances 0.000 claims description 21
- 230000005611 electricity Effects 0.000 claims description 14
- 230000001105 regulatory effect Effects 0.000 claims description 9
- 239000002033 PVDF binder Substances 0.000 claims description 5
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 3
- 238000013016 damping Methods 0.000 abstract description 18
- 238000004544 sputter deposition Methods 0.000 description 15
- 238000009826 distribution Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000005457 optimization Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/871—Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/872—Interconnections, e.g. connection electrodes of multilayer piezoelectric or electrostrictive devices
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Transducers For Ultrasonic Waves (AREA)
Abstract
The present invention relates to sensor technical field more particularly to a kind of piezoelectric element and preparation method thereof and ultrasonic sensors.Influence of the stress damping to device performance can be reduced.A kind of piezoelectric element, including support plate, and the first electrode layer, the second electrode lay and the third electrode layer that are cascading along the direction far from support plate；First electrode layer and the second electrode lay are isolated by the first piezoelectric layer, and the second electrode lay and third electrode layer are isolated by the second piezoelectric layer；The orthographic projection of electrode in the thickness direction of support plate, first electrode layer and the second electrode lay is non-overlapping, and Chong Die with the orthographic projection of electrode in third electrode layer；Alternatively, the orthographic projection of the second electrode lay and the electrode in third electrode layer is non-overlapping, and it is Chong Die with the orthographic projection of the electrode in first electrode layer；Alternatively, third electrode layer and the orthographic projection of the electrode in first electrode layer are non-overlapping, and it is Chong Die with the orthographic projection of the electrode in the second electrode lay.
Description
Technical field
The present invention relates to sensor technical field more particularly to a kind of piezoelectric element and preparation method thereof and ultrasonic sensings
Device.
Background technique
Piezo technology is a kind of technology based on piezoelectric effect.Piezoelectric effect can be divided into direct piezoelectric effect and inverse piezoelectricity is imitated
It answers.Direct piezoelectric effect refers to: it is internal just to generate polarization when effect of the crystal by certain fixed-direction external force, simultaneously
The opposite charge of symbol is generated on certain two surface；After external force removes, crystal is restored to uncharged state again；Work as external force
When action direction changes, the polarity of charge is also changed correspondingly, and the quantity of electric charge caused by crystal stress is directly proportional to the size of external force.
Ultrasonic sensor is using made of direct piezoelectric effect mostly.Inverse piezoelectric effect refers to: applying alternating electric field to crystal and causes crystalline substance
The phenomenon that body mechanically deform, also known as electrostriction effect.It can be used for electroacoustic and ultrasonic work with the transmitter that inverse piezoelectric effect manufactures
Journey.
Summary of the invention
It is a primary object of the present invention to provide a kind of piezoelectric element and preparation method thereof and ultrasonic sensor.It can subtract
Small stress damps the influence to device performance.
In order to achieve the above objectives, the present invention adopts the following technical scheme:
On the one hand, the embodiment of the present invention provides a kind of piezoelectric element, including support plate, and along the separate support plate
Direction, the first electrode layer being cascading, the second electrode lay and third electrode layer；Wherein, the first electrode layer and institute
It states and is isolated between the second electrode lay by the first piezoelectric layer, pass through second between the second electrode lay and the third electrode layer
Piezoelectric layer isolation；The first electrode layer includes multiple first sub-electrodes, and the second electrode lay includes multiple second sub electrodes,
The third electrode layer includes one or more third sub-electrodes, and along the thickness direction of the support plate, the first son electricity
The orthographic projection of pole and the orthographic projection of the second sub electrode are non-overlapping, the orthographic projection of multiple first sub-electrodes and multiple described
The orthographic projection of second sub electrode is Chong Die with the orthographic projection of the third sub-electrode；Alternatively, the first electrode layer includes one
Or multiple first sub-electrodes, the second electrode lay include multiple second sub electrodes, the third electrode layer includes multiple thirds
Sub-electrode, and along the thickness direction of the support plate, the positive throwing of the orthographic projection of the second sub electrode and the third sub-electrode
Shadow is non-overlapping, and the orthographic projection of multiple second sub electrodes and the orthographic projection of multiple third sub-electrodes are sub with described first
The orthographic projection of electrode is overlapped；Alternatively, the first electrode layer includes multiple first sub-electrodes, the second sub electrode layer includes one
A or multiple second sub electrodes, the third electrode layer include multiple third sub-electrodes, and along the thickness direction of the support plate,
The orthographic projection of first sub-electrode and the orthographic projection of the third sub-electrode are non-overlapping, the positive throwing of multiple first sub-electrodes
The orthographic projection of shadow and multiple third sub-electrodes is Chong Die with the orthographic projection of the second sub electrode.
Optionally, the first electrode layer includes multiple first sub-electrodes, and the second electrode lay includes multiple second sons
Electrode, and in the case that the orthographic projection of first sub-electrode and the orthographic projection of the second sub electrode are non-overlapping, the third
Electrode layer includes the third sub-electrode an of planar.
Optionally, the second electrode lay includes multiple second sub electrodes, and the third electrode layer includes multiple third
Electrode, the orthographic projection of the second sub electrode and the orthographic projection of the third sub-electrode it is non-overlapping in the case where, it is described first electricity
Pole layer includes first sub-electrode of a planar.
Optionally, the first electrode layer includes multiple first sub-electrodes, and the third sub-electrode layer includes one or more
A third sub-electrode, and the orthographic projection of first sub-electrode and the orthographic projection of the third sub-electrode are non-overlapping, described second
The second sub electrode of one planar of electrode layer.
Optionally, the thickness of first sub-electrode, second sub electrode and the third sub-electrode is 100nm-
300nm。
Optionally, the thickness of first piezoelectric layer and second piezoelectric layer is 800nm-3 μm.
Optionally, the material of first sub-electrode, the second sub electrode and the third sub-electrode includes metal
Molybdenum.
Optionally, the material of first piezoelectric layer and second piezoelectric layer includes in AlN, PZT, ZnO, PVDF
At least one material.
On the other hand, the embodiment of the present invention provides a kind of ultrasonic sensor, including piezoelectric element as described above.
It optionally, further include being set to base of the support plate described in the piezoelectric element far from the first electrode layer side
Bottom is provided with cavity between the basal layer and the support plate.
Optionally, acoustic impedance regulating course is additionally provided between the basal layer and the support plate, the acoustic impedance is adjusted
The cavity is set between layer and the basal layer, and the acoustic impedance values of the acoustic impedance regulating course are more than or less than the support plate
Acoustic impedance values.
In another aspect, the embodiment of the present invention provides a kind of preparation method of piezoelectric element, comprising: successively shape on the supporting plate
At first electrode layer, the second electrode lay and the third electrode layer being stacked, and in the first electrode layer and second electricity
The first piezoelectric layer is formed between the layer of pole, forms the second piezoelectric layer between the second electrode lay and the third electrode layer；Institute
Stating first electrode layer includes multiple first sub-electrodes, and the second electrode lay includes multiple second sub electrodes, the third electrode
Layer includes one or more third sub-electrodes, and along the thickness direction of the support plate, the orthographic projection of first sub-electrode and
The orthographic projection of the second sub electrode is non-overlapping, the orthographic projections of multiple first sub-electrodes and multiple second sub electrodes
Orthographic projection is Chong Die with the orthographic projection of the third sub-electrode；Alternatively, the first electrode layer includes the first son of one or more
Electrode, the second electrode lay include multiple second sub electrodes, and the third electrode layer includes multiple third sub-electrodes, and along institute
The thickness direction of support plate is stated, the orthographic projection of the second sub electrode and the orthographic projection of the third sub-electrode are non-overlapping, multiple
The orthographic projection of the orthographic projection of the second sub electrode and the orthographic projection of multiple third sub-electrodes with first sub-electrode
Overlapping；Alternatively, the first electrode layer includes multiple first sub-electrodes, the second sub electrode layer includes one or more second
Sub-electrode, the third electrode layer include multiple third sub-electrodes, and along the thickness direction of the support plate, the first son electricity
The orthographic projection of pole and the orthographic projection of the third sub-electrode are non-overlapping, the orthographic projection of multiple first sub-electrodes and multiple described
The orthographic projection of third sub-electrode is Chong Die with the orthographic projection of the second sub electrode.
The embodiment of the present invention provides a kind of piezoelectric element and preparation method thereof and ultrasonic sensor, can reduce stress damping
Influence to device performance, so as to improve the piezoelectric property and sensitivity of ultrasonic sensor.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of schematic cross-sectional view of ultrasonic sensor provided in an embodiment of the present invention；
Fig. 2 is the schematic cross-sectional view of another ultrasonic sensor provided in an embodiment of the present invention；
Fig. 3 is the schematic cross-sectional view of another ultrasonic sensor provided in an embodiment of the present invention；
Fig. 4 is the schematic cross-sectional view of another ultrasonic sensor provided in an embodiment of the present invention；
Fig. 5 is the schematic cross-sectional view of another ultrasonic sensor provided in an embodiment of the present invention；
Fig. 6 is the schematic cross-sectional view of another ultrasonic sensor provided in an embodiment of the present invention；
Fig. 7 is the schematic cross-sectional view of another ultrasonic sensor provided in an embodiment of the present invention；
Fig. 8 is the schematic cross-sectional view of another ultrasonic sensor provided in an embodiment of the present invention；
Fig. 9 is the schematic cross-sectional view of another ultrasonic sensor provided in an embodiment of the present invention；
Figure 10 is the schematic cross-sectional view of another ultrasonic sensor provided in an embodiment of the present invention；
Figure 11 is the schematic cross-sectional view of another ultrasonic sensor provided in an embodiment of the present invention；
Figure 12 is the structural schematic diagram that one kind provided in an embodiment of the present invention forms multiple first sub-electrodes on the supporting plate；
Figure 13 is a kind of structural schematic diagram that the first piezoelectric layer is formed based on Figure 12 provided in an embodiment of the present invention；
Figure 14 is a kind of structural schematic diagram that multiple second sub electrodes are formed based on Figure 13 provided in an embodiment of the present invention；
Figure 15 is a kind of structural schematic diagram that the second piezoelectric layer is formed based on Figure 14 provided in an embodiment of the present invention；
Figure 16 is the structural schematic diagram that another kind provided in an embodiment of the present invention forms the first sub-electrode on the supporting plate；
Figure 17 is a kind of structural schematic diagram that the first piezoelectric layer is formed based on Figure 16 provided in an embodiment of the present invention；
Figure 18 is a kind of structural schematic diagram that multiple second sub electrodes are formed based on Figure 17 provided in an embodiment of the present invention；
Figure 19 is a kind of structural schematic diagram that the second piezoelectric layer is formed based on Figure 18 provided in an embodiment of the present invention；
Figure 20 is another structural schematic diagram that second sub electrode is formed based on Figure 13 provided in an embodiment of the present invention；
Figure 21 is a kind of structural schematic diagram that the second piezoelectric layer is formed based on Figure 20 provided in an embodiment of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that, term " center ", "upper", "lower", "front", "rear", " left side ",
The orientation or positional relationship of the instructions such as " right side ", "vertical", "horizontal", "top", "bottom", "inner", "outside" is based on the figure
Orientation or positional relationship is merely for convenience of description of the present invention and simplification of the description, rather than the device of indication or suggestion meaning or
Element must have a particular orientation, be constructed and operated in a specific orientation, therefore be not considered as limiting the invention.?
In description of the invention, unless otherwise indicated, the meaning of " plurality " is two or more.
The embodiment of the present invention provides a kind of ultrasonic sensor, referring to Fig. 1, comprising: basal layer 01, and it is set to substrate
Piezoelectric element 02 on layer 01.As shown in Figure 1, the piezoelectric element 02 includes support plate 021, and along separate support plate 021
Direction, the first electrode layer 022 being cascading, the second electrode lay 023 and third electrode layer 024.022 He of first electrode layer
It is isolated between the second electrode lay 023 by the first piezoelectric layer 025, is passed through between the second electrode lay 023 and third electrode layer 024
The isolation of second piezoelectric layer 026.The basal layer 01 is set to the support plate 021 in the piezoelectric element 02 far from the first electrode layer
022 side, and cavity A is provided between the basal layer 01 and the support plate 021.
Wherein, different according to the structure of the first electrode layer 022, the second electrode lay 023 and third electrode layer 024, it can be with
There are three types of possible structures.
In the first possible structure, as depicted in figs. 1 and 2, which includes multiple first sub-electrodes
0221, which includes multiple second sub electrodes 0231, which includes one or more thirds
Sub-electrode 0241, and along the thickness direction of the support plate 021, the orthographic projection and second sub electrode 0231 of first sub-electrode 0221
Orthographic projection it is non-overlapping, the orthographic projection of multiple first sub-electrodes 0221 and the orthographic projection of multiple second sub electrodes 0231 with
The orthographic projection of the third sub-electrode 0241 is overlapped.
Relative to as shown in Figure 3 and Figure 4, ultrasonic sensor only includes being arranged in the first piezoelectric layer 025 and the second piezoelectricity
The first sub-electrode 0221 and third sub-electrode 0241 for the two sides that layer 026 is located remotely from each other.And first sub-electrode 0221 and third son
The distribution situation as shown in Figure 3 of electrode 0241, by carrying out simulative display to the ultrasonic sensor: ultrasonic sensor entirety
Residual stress generates a upturned stress deformation, when being powered on to the ultrasonic sensor, the damping of deformation generation
It will affect the amplitude and frequency that the first piezoelectric layer 025 and the second piezoelectric layer 026 vibrate up and down, cause device work undesirable, with
And first sub-electrode 0221 and the distribution situation as shown in Figure 4 of third sub-electrode 0241, by carrying out mould to the ultrasonic sensor
Quasi- display: the residual stress of ultrasonic sensor entirety generates one to recessed stress deformation, is powered to the ultrasonic sensor
When work, the damping which generates will affect the amplitude and frequency that the first piezoelectric layer 025 and the second piezoelectric layer 026 vibrate up and down
Rate causes device work undesirable.
In this possible structure, as depicted in figs. 1 and 2, at work, by the first sub-electrode 0221, second
Sub-electrode 0231 and third sub-electrode 0241 are powered simultaneously, such as the first sub-electrode 0221 and second sub electrode 0231 connect positive electricity
Position, 0241 earthing potential of third sub-electrode, then as shown in Figure 1, answering of generating of the first sub-electrode 0221 and third sub-electrode 0241
Power deformation is upward, and the stress deformation of second sub electrode 0231 and the generation of third sub-electrode 0241 is downward, and upper and lower stress passes through device
Optimization is cancelled out each other, the distribution situation as shown in Figure 3 with the first sub-electrode 0221 and third sub-electrode 0241, so that the ultrasound passes
The residual stress of sensor entirety generates a upturned stress deformation and compares, and low stress deformation and low is presented in resulting devices
Vibration damping, so that reducing stress damps influence to device performance.As shown in Fig. 2, the first sub-electrode 0221 and third
The stress deformation that electrode 0241 generates is downward, and the stress deformation of second sub electrode 0231 and the generation of third sub-electrode 0241 is upward,
Upper and lower stress is cancelled out each other by device optimization, the distribution as shown in Figure 4 with the first sub-electrode 0221 and third sub-electrode 0241
Situation is compared so that the residual stress of ultrasonic sensor entirety generates one to recessed stress deformation, and resulting devices are presented
Low stress deformation and low vibration damping can equally reduce influence of the stress damping to device performance.
In second of possible structure, as shown in Figure 5 and Figure 6, which includes the first son of one or more
Electrode 0221, the second electrode lay 023 include multiple second sub electrodes 0231, which includes multiple third
Electrode 0241, and along the thickness direction of the support plate 021, the orthographic projection of the second sub electrode 0231 and third sub-electrode 0231
Orthographic projection is non-overlapping, the orthographic projection of multiple second sub electrodes 0231 and the orthographic projection of multiple third sub-electrodes 0231 with this
The orthographic projection of first sub-electrode 0241 is overlapped.
Relative to as shown in Figure 7 and Figure 8, ultrasonic sensor only includes being arranged in the first piezoelectric layer 025 and the second piezoelectricity
The first sub-electrode 0221 and third sub-electrode 0241 for the two sides that layer 026 is located remotely from each other.And first sub-electrode 0221 and third son
The distribution situation as shown in Figure 7 of electrode 0241, by carrying out simulative display to the ultrasonic sensor: ultrasonic sensor entirety
Residual stress generates a upturned stress deformation, when being powered on to the ultrasonic sensor, the damping of deformation generation
It will affect the amplitude and frequency that the first piezoelectric layer 025 and the second piezoelectric layer 026 vibrate up and down, cause device work undesirable, with
And first sub-electrode 0221 and the distribution situation as shown in Figure 8 of third sub-electrode 0241, by carrying out mould to the ultrasonic sensor
Quasi- display: the residual stress of ultrasonic sensor entirety generates one to recessed stress deformation, is powered to the ultrasonic sensor
When work, the damping which generates will affect the amplitude and frequency that the first piezoelectric layer 025 and the second piezoelectric layer 026 vibrate up and down
Rate causes device work undesirable.
In this possible structure, as shown in Figure 5 and Figure 6, at work, by the first sub-electrode 0221, second
Sub-electrode 0231 and third sub-electrode 0241 are powered simultaneously, such as second sub electrode 0231 and third sub-electrode 0241 connect positive electricity
Position, 0221 earthing potential of the first sub-electrode, then as shown in figure 5, answering of generating of third sub-electrode 0241 and the first sub-electrode 0221
Power deformation is upward, and the stress deformation of second sub electrode 0231 and the generation of the first sub-electrode 0221 is downward, and upper and lower stress passes through device
Optimization is cancelled out each other, the distribution situation as shown in Figure 7 with the first sub-electrode 0221 and third sub-electrode 0241, so that the ultrasound passes
The residual stress of sensor entirety generates a upturned stress deformation and compares, and low stress deformation and low is presented in resulting devices
Vibration damping, so that reducing stress damps influence to device performance.As shown in fig. 6, third sub-electrode 0241 and the first son
The stress deformation that electrode 0221 generates is downward, and the stress deformation of second sub electrode 0231 and the generation of the first sub-electrode 0221 is upward,
Upper and lower stress is cancelled out each other by device optimization, the distribution as shown in Figure 8 with the first sub-electrode 0221 and third sub-electrode 0241
Situation is compared so that the residual stress of ultrasonic sensor entirety generates one to recessed stress deformation, and resulting devices are presented
Low stress deformation and low vibration damping can equally reduce influence of the stress damping to device performance.
In the third possible structure, as shown in Figure 9 and Figure 10, which includes multiple first sub-electrodes
0221, which includes one or more second sub electrodes 0231, which includes multiple thirds
Sub-electrode 0241, and along the thickness direction of the support plate 021, the orthographic projection of first sub-electrode 0221 and third sub-electrode 0231
Orthographic projection it is non-overlapping, the orthographic projection of multiple first sub-electrodes 0221 and the orthographic projection of multiple third sub-electrodes 0231 with
The orthographic projection of the second sub electrode 0241 is overlapped.
Relative to such as Fig. 3, Fig. 4, Fig. 7 and shown in Fig. 8, ultrasonic sensor only includes being arranged in 025 He of the first piezoelectric layer
The first sub-electrode 0221 and third sub-electrode 0241 for the two sides that second piezoelectric layer 026 is located remotely from each other.And first sub-electrode 0221
The distribution situation as shown in Figure 3 and Figure 7 with third sub-electrode 0241, by carrying out simulative display to the ultrasonic sensor: this is super
The residual stress of sonic transducer entirety generates a upturned stress deformation, when being powered on to the ultrasonic sensor,
The damping that the deformation generates will affect the amplitude and frequency that the first piezoelectric layer 025 and the second piezoelectric layer 026 vibrate up and down, and lead to device
Part works undesirable and the first sub-electrode 0221 and the distribution situation as shown in Figure 4 and Figure 8 of third sub-electrode 0241, passes through
Carry out simulative display to the ultrasonic sensor: the residual stress of ultrasonic sensor entirety generates one to recessed stress shape
Become, when being powered on to the ultrasonic sensor, the damping which generates will affect the first piezoelectric layer 025 and the second piezoelectric layer
026 amplitude vibrated up and down and frequency cause device work undesirable.
In this possible structure, as shown in Figure 9 and Figure 10, at work, by the first sub-electrode 0221, second
Sub-electrode 0231 and third sub-electrode 0241 are powered simultaneously, such as the first sub-electrode 0221 and third sub-electrode 0241 connect positive electricity
Position, 0231 earthing potential of second sub electrode, then as shown in figure 9, answering of generating of third sub-electrode 0241 and second sub electrode 0231
Power deformation is upward, and the stress deformation of the first sub-electrode 0221 and the generation of second sub electrode 0231 is downward, and upper and lower stress passes through device
Optimization is cancelled out each other, the distribution situation as shown in Figure 3 and Figure 7 with the first sub-electrode 0221 and third sub-electrode 0241, so that should
The residual stress of ultrasonic sensor entirety generates a upturned stress deformation and compares, and low stress shape is presented in resulting devices
Change and low vibration damping, to reduce influence of the stress damping to device performance.As shown in Figure 10, third sub-electrode 0241
The stress deformation generated with second sub electrode 0231 is downward, the stress shape of the first sub-electrode 0221 and the generation of second sub electrode 0231
In deflecting, upper and lower stress is cancelled out each other by device optimization, with the first sub-electrode 0221 and third sub-electrode 0241 such as Fig. 4 and figure
Distribution situation shown in 8 is compared so that the residual stress of ultrasonic sensor entirety generates one to recessed stress deformation,
Low stress deformation and low vibration damping is presented in resulting devices, can equally reduce influence of the stress damping to device performance.
Wherein, for the first possible structure, which may include a third sub-electrode 0241,
It also may include multiple third sub-electrodes 0241, and when the third electrode layer 024 includes a third sub-electrode 0241, this
Three sub-electrodes 0241 can be discrete shape, such as pectination.It may be continuous shape, such as planar.
In one embodiment of the invention, as depicted in figs. 1 and 2, which includes multiple first sub-electrodes
0221, which includes multiple second sub electrodes 0231, and the orthographic projection of the first sub-electrode 0221 and the second son are electric
In the case that the orthographic projection of pole 0231 is non-overlapping, which includes the third sub-electrode 0241 of a planar.I.e. such as
Shown in Fig. 1 and Fig. 2, the situation that the third sub-electrode 0241 is continuous shape is shown.
For second of possible structure, which may include first sub-electrode 0221, can also be with
Including multiple first sub-electrodes 0221, and when the first electrode layer 022 includes first sub-electrode 0221, the first son electricity
Pole 0221 can be discrete shape, such as pectination.It may be continuous shape, such as planar.
In one embodiment of the invention, as shown in Figure 5 and Figure 6, which includes multiple third sub-electrodes
0241, which includes multiple second sub electrodes 0231, and the orthographic projection of the third sub-electrode 0241 and the second son
In the case that the orthographic projection of electrode 0231 is non-overlapping, which includes the first sub-electrode 0221 of a planar.I.e.
As shown in Figure 5 and Figure 6, the situation that first sub-electrode 0221 is continuous shape is shown.
For the third possible structure, which may include a second sub electrode 0231, can also be with
Including multiple second sub electrodes 0231, and when the second electrode lay 023 includes a second sub electrode 0231, the second son electricity
Pole 0231 can be discrete shape, such as pectination.It may be continuous shape, such as planar.
In one embodiment of the invention, as shown in Figure 9 and Figure 10, which includes multiple first sub-electrodes
0221, which includes multiple third sub-electrodes 0241, and orthographic projection and third of first sub-electrode 0221
In the case that the orthographic projection of electrode 0241 is non-overlapping, which includes the second sub electrode 0231 of a planar.I.e.
As shown in Figure 9 and Figure 10, the situation that the second sub electrode is 0231 continuous shape is shown.
In practical applications, in order to which the working frequency for improving the first piezoelectric layer 025 and the second piezoelectric layer 026 can be improved
The thickness of GHz rank, first piezoelectric layer 025 and the second piezoelectric layer 026 is in a μm rank, and therefore, it is necessary to support plates 021 to it
It is supported.
Wherein, illustratively, shown in as shown in Figure 1, Figure 2, Fig. 5, Fig. 6, Fig. 9 and Figure 10, the thickness d 1 of first piezoelectric layer 025
It can be 800nm-3 μm, the thickness d 2 of second piezoelectric layer 026 can be 800nm-3 μm.
For example, the thickness d 1 of first piezoelectric layer 025 can be the arbitrary value in 800nm, 900nm, 1 μm, 2 μm and 3 μm.
The thickness d 2 of second piezoelectric layer 026 can be the arbitrary value in 800nm, 900nm, 1 μm, 2 μm and 3 μm.
At this point, illustrative, the material of first piezoelectric layer 025 and the second piezoelectric layer 026 include AlN (aluminium nitride),
PZT (Piezoelectric Ceramic Transducer, lead zirconate titanate), ZnO (zinc oxide), PVDF
At least one of (Polyvinylidene Fluoride, polyvinylidene fluoride) material.Using these piezoelectric materials, a side
Face can be improved the piezoelectric property of the ultrasonic sensor, on the other hand, can be by the first piezoelectric layer 025 and the second piezoelectric layer 026
Thickness limit in the above range, the thickness so as to reduce the first piezoelectric layer 025 and the second piezoelectric layer 026 is thicker and leads
The stress of cause.
Wherein, the first piezoelectric layer 025 and the deformation of the second piezoelectric layer 026 in order to prevent, improves support strength, optionally, should
Basal layer 01 can be silicon substrate layer.The material of the support plate 021 can be silicon materials.
In another embodiment of the present invention, as shown in figure 11, acoustic resistance is additionally provided between the basal layer 01 and support plate 021
Cavity A, the acoustic impedance of the acoustic impedance regulating course 03 is arranged in anti-regulating course 03 between the acoustic impedance regulating course 03 and basal layer 01
Value is more than or less than the acoustic impedance values of the support plate 021.
In embodiments of the present invention, since the acoustic impedance values of the acoustic impedance regulating course 03 are greater than or equal to the support plate 021
Acoustic impedance values the high and low alternating of acoustic impedance values is prepared below the hearth electrode of resonator according to the bragg layer technology in optics
Acoustic impedance layer, so that sound wave is limited within piezoelectric pile.
Wherein, optionally, the material of the acoustic impedance regulating course 03 may include earth silicon material.Earth silicon material and
The acoustic impedance values difference of silicon materials is larger, and both materials are common used material, and mechanical stability is high, and integration is good, can make
The standby ultrasonic sensor for obtaining function admirable.
Wherein, the thickness of first sub-electrode 0221, second sub electrode 0231 and third sub-electrode 0241 is not done and is had
Body limits.
In one embodiment of the invention, shown in as shown in Figure 1, Figure 2, Fig. 5, Fig. 6, Fig. 9 and Figure 10, first sub-electrode 0221
Thickness h 1 is 100nm-300nm；The thickness h 2 of second sub electrode 0231 is 100nm-300nm；The thickness of third sub-electrode 0241
H3 is 100nm-300nm.The first sub-electrode 0221, second sub electrode 0231 and third sub-electrode 0241 can be reduced as much as possible
Stress caused by thickness.
Wherein, illustratively, the thickness h 1 of first sub-electrode 0221 can for 100nm, 120nm, 140nm, 160nm,
Arbitrary value in 180nm, 200nm, 220nm, 240nm, 260nm, 280nm and 300nm.The thickness h 2 of second sub electrode 0231 can
Think appointing in 100nm, 120nm, 140nm, 160nm, 180nm, 200nm, 220nm, 240nm, 260nm, 280nm and 300nm
Meaning value.The thickness h 3 of third sub-electrode 0241 can for 100nm, 120nm, 140nm, 160nm, 180nm, 200nm, 220nm,
Arbitrary value in 240nm, 260nm, 280nm and 300nm.
Wherein, optionally, the material of first sub-electrode 0221, second sub electrode 0231 and third sub-electrode 0241 can be with
Including metal molybdenum.So, additionally it is possible to make first sub-electrode 0221, second sub electrode 0231 and third sub-electrode 0241 with
First piezoelectric layer 025 and the second piezoelectric layer 026 have good lattice.
The embodiment of the present invention provides a kind of preparation method of piezoelectric element, comprising:
The first electrode layer being stacked, the second electrode lay and third electrode layer are sequentially formed on the supporting plate, and at this
The first piezoelectric layer is formed between first electrode layer and the second electrode lay, forms second between the second electrode lay and third electrode layer
Piezoelectric layer.
Wherein, different according to the structure of first electrode layer, the second electrode lay and third electrode layer, it can there are three types of different
Implementation.
In the first implementation, as depicted in figs. 1 and 2, which includes multiple first sub-electrodes
0221, which includes multiple second sub electrodes 0231, which includes one or more thirds
Sub-electrode 0241, and along the thickness direction of the support plate 021, the orthographic projection and second sub electrode 0231 of first sub-electrode 0221
Orthographic projection it is non-overlapping, the orthographic projection of multiple first sub-electrodes 0221 and the orthographic projection of multiple second sub electrodes 0231 with
The orthographic projection of the third sub-electrode 0241 is overlapped.
In this implementation, the first electrode layer 022, second being stacked is sequentially formed in the support plate 021
Electrode layer 023 and third electrode layer 024, and the first piezoelectric layer is formed between the first electrode layer 022 and the second electrode lay 023
025, the second piezoelectric layer 026 is formed between the second electrode lay 023 and third electrode layer 024；Include:
S1, as shown in figure 12, multiple first sub-electrodes 0221 are formed in the support plate 021.
Wherein, the material of first sub-electrode 0221 may include metal molybdenum.At this moment, sputtering or deposited metal can be passed through
The mode of molybdenum forms the first metal molybdenum layer in support plate 021, then forms multiple first sub-electrodes by lithographic etch process
0221。
S2, as shown in figure 13, form the first piezoelectric layer 025 in support plate 021 and multiple first sub-electrodes 0221.
For example, can by way of sputtering or depositing in the support plate 021 and multiple first sub-electrodes 0221 shape
At first piezoelectric layer 025.
S3, as shown in figure 14, multiple second sub electrodes 0231 are formed on first piezoelectric layer 025.
Wherein, the material of the second sub electrode 0231 may include metal molybdenum.At this moment, sputtering or deposited metal can be passed through
The mode of molybdenum forms the second metal molybdenum layer, then, then by lithographic etch process forms multiple second sub electrodes 0231.
S4, as shown in figure 15, the second piezoelectric layer 026 is formed on the first piezoelectric layer 025 and multiple second sub electrodes 0231.
For example, second piezoelectric layer 026 can be formed by way of sputtering or depositing.
S5, one or more third sub-electrodes 0241 are formed on second piezoelectric layer 02, obtain such as Fig. 1 and Fig. 2 institute
The structure shown, wherein Fig. 1 and Fig. 2 illustrates only on the second piezoelectric layer 026 one third sub-electrode 0241 of formation, and this
Three sub-electrodes 0241 are the situation of planar.
Wherein, the material of the third sub-electrode 0241 may include metal molybdenum.At this moment, sputtering or deposited metal can be passed through
The mode of molybdenum forms third metal molybdenum layer, and structure as shown in Figure 1 can be obtained.
In second of implementation, as shown in Figure 5 and Figure 6, which includes one or more the first son electricity
Pole 0221, the second electrode lay 023 include multiple second sub electrodes 0231, which includes multiple third electricity
Pole 0241, and along the thickness direction of the support plate 021, the orthographic projection of the second sub electrode 0231 and third sub-electrode 0231 are just
Project it is non-overlapping, the orthographic projection of multiple second sub electrodes 0231 and the orthographic projection of multiple third sub-electrodes 0231 with this
The orthographic projection of one sub-electrode 0241 is overlapped.
In this implementation, the first electrode layer 022, second being stacked is sequentially formed in the support plate 021
Electrode layer 023 and third electrode layer 024, and the first piezoelectric layer is formed between the first electrode layer 022 and the second electrode lay 023
025, the second piezoelectric layer 026 is formed between the second electrode lay 023 and third electrode layer 024；Include:
S11, one or more first sub-electrodes 0221 are formed on the supporting plate, obtain structure as shown in figure 16, wherein
Figure 16 illustrates only one the first sub-electrode 0221 of formation in support plate 021, and first sub-electrode 0221 is the feelings of planar
Shape.
Wherein, the material of first sub-electrode 0221 may include metal molybdenum.At this moment, sputtering or deposited metal can be passed through
The mode of molybdenum forms the first metal molybdenum layer, and structure as shown in figure 16 can be obtained.
S12, as shown in figure 17, the first piezoelectric layer 025 is formed on the first sub-electrode 0221.
For example, the first piezoelectric layer 025 can be formed on first sub-electrode 0221 by way of sputtering or depositing.
S13, as shown in figure 18, multiple second sub electrodes 0231 are formed on the first piezoelectric layer 025.
Wherein, the material of the second sub electrode 0231 may include metal molybdenum.At this moment, sputtering or deposited metal can be passed through
The mode of molybdenum forms the second metal molybdenum layer, then, then by lithographic etch process forms multiple second sub electrodes 0231.
S14, as shown in figure 19, form the second piezoelectric layer on the first piezoelectric layer 025 and multiple second sub electrodes 0231
026。
For example, second piezoelectric layer 026 can be formed by way of sputtering or depositing.
S15, multiple third sub-electrodes 0241 are formed on the second piezoelectric layer 026, obtain structure as shown in Figure 5 and Figure 6.
Wherein, the material of the third sub-electrode 0241 may include metal molybdenum.At this moment, sputtering or deposited metal can be passed through
The mode of molybdenum forms third metal molybdenum layer on the second piezoelectric layer 026, then forms multiple third by lithographic etch process
Electrode 0241.
In the third implementation, as shown in Figure 9 and Figure 10, which includes multiple first sub-electrodes
0221, which includes one or more second sub electrodes 0231, which includes multiple thirds
Sub-electrode 0241, and along the thickness direction of the support plate 021, the orthographic projection of first sub-electrode 0221 and third sub-electrode 0231
Orthographic projection it is non-overlapping, the orthographic projection of multiple first sub-electrodes 0221 and the orthographic projection of multiple third sub-electrodes 0231 with
The orthographic projection of the second sub electrode 0241 is overlapped.
In this implementation, the first electrode layer 022, second being stacked is sequentially formed in the support plate 021
Electrode layer 023 and third electrode layer 024, and the first piezoelectric layer is formed between the first electrode layer 022 and the second electrode lay 023
025, the second piezoelectric layer 026 is formed between the second electrode lay 023 and third electrode layer 024；Include:
S21, multiple first sub-electrodes 0221 are formed on the supporting plate, obtain structure as shown in fig. 13 that.
Wherein, the material of first sub-electrode 0221 may include metal molybdenum.At this moment, sputtering or deposited metal can be passed through
The mode of molybdenum forms the first metal molybdenum layer, then forms multiple first sub-electrodes 0221 by lithographic etch process.
S22, as shown in figure 13, form the first piezoelectric layer 025 in support plate 021 and multiple first sub-electrodes 0221.
For example, can by way of sputtering or depositing in the support plate 021 and multiple first sub-electrodes 0221 shape
At first piezoelectric layer 025.
S23, one or more second sub electrodes 0231 are formed on the first piezoelectric layer 025, obtain knot as shown in figure 20
Structure, wherein Figure 20 illustrates only one second sub electrode 0231 of formation on the first piezoelectric layer 025, and the second sub electrode
0231 is the situation of planar.
Wherein, the material of the second sub electrode 0231 may include metal molybdenum.At this moment, sputtering or deposited metal can be passed through
The mode of molybdenum forms the second metal molybdenum layer, and structure as shown in figure 20 can be obtained.
S24, as shown in figure 21, the second piezoelectric layer 026 is formed in second sub electrode 0231.
For example, second piezoelectric layer 026 can be formed by way of sputtering or depositing.
S25, multiple third sub-electrodes 0241 are formed on the second piezoelectric layer 026, obtain knot as shown in Figure 9 and Figure 10
Structure.
Wherein, the material of the third sub-electrode 0241 may include metal molybdenum.At this moment, sputtering or deposited metal can be passed through
The mode of molybdenum forms third metal molybdenum layer on the second piezoelectric layer 026, then forms multiple third by lithographic etch process
Electrode 0241.
The preparation method of piezoelectric element provided in an embodiment of the present invention has and piezoelectric element provided in an embodiment of the present invention
Identical technical effect, details are not described herein.
Scope of protection of the present invention is not limited thereto, anyone skilled in the art the invention discloses
Technical scope in, can easily think of the change or the replacement, should be covered by the protection scope of the present invention.Therefore, of the invention
Protection scope should be based on the protection scope of the described claims.
Claims (12)
1. a kind of piezoelectric element, which is characterized in that including support plate, and along the direction far from the support plate, stack gradually
First electrode layer, the second electrode lay and the third electrode layer of setting；
Wherein, it is isolated between the first electrode layer and the second electrode lay by the first piezoelectric layer, the second electrode lay
It is isolated between the third electrode layer by the second piezoelectric layer；
The first electrode layer includes multiple first sub-electrodes, and the second electrode lay includes multiple second sub electrodes, and described
Three electrode layers include one or more third sub-electrodes, and along the thickness direction of the support plate, first sub-electrode is just
Projection and the orthographic projection of the second sub electrode are non-overlapping, the orthographic projection of multiple first sub-electrodes and multiple second sons
The orthographic projection of electrode is Chong Die with the orthographic projection of the third sub-electrode；Or
The first electrode layer includes one or more first sub-electrodes, and the second electrode lay includes multiple second sub electrodes,
The third electrode layer includes multiple third sub-electrodes, and along the thickness direction of the support plate, the second sub electrode is just
Projection and the orthographic projection of the third sub-electrode are non-overlapping, the orthographic projection of multiple second sub electrodes and multiple third
The orthographic projection of electrode is Chong Die with the orthographic projection of first sub-electrode；Or
The first electrode layer includes multiple first sub-electrodes, and the second sub electrode layer includes one or more the second son electricity
Pole, the third electrode layer include multiple third sub-electrodes, and along the thickness direction of the support plate, first sub-electrode
Orthographic projection and the orthographic projection of the third sub-electrode are non-overlapping, the orthographic projection and multiple thirds of multiple first sub-electrodes
The orthographic projection of sub-electrode is Chong Die with the orthographic projection of the second sub electrode.
2. piezoelectric element according to claim 1, which is characterized in that
The first electrode layer includes multiple first sub-electrodes, and the second electrode lay includes multiple second sub electrodes, and described
In the case that the orthographic projection of first sub-electrode and the orthographic projection of the second sub electrode are non-overlapping, the third electrode layer includes one
The third sub-electrode of a planar.
3. piezoelectric element according to claim 1, which is characterized in that
The second electrode lay includes multiple second sub electrodes, and the third electrode layer includes multiple third sub-electrodes, and described
In the case that the orthographic projection of two sub-electrodes and the orthographic projection of the third sub-electrode are non-overlapping, the first electrode layer includes one
First sub-electrode of planar.
4. piezoelectric element according to claim 1, which is characterized in that
The first electrode layer includes multiple first sub-electrodes, and the third sub-electrode layer includes one or more third electricity
Pole, and the orthographic projection of first sub-electrode and the orthographic projection of the third sub-electrode are non-overlapping, the second electrode lay one
The second sub electrode of planar.
5. piezoelectric element according to claim 1-4, which is characterized in that
The thickness of first sub-electrode, second sub electrode and the third sub-electrode is 100nm-300nm.
6. piezoelectric element according to claim 1-4, which is characterized in that
The thickness of first piezoelectric layer and second piezoelectric layer is 800nm-3 μm.
7. piezoelectric element according to claim 1-4, which is characterized in that
The material of first sub-electrode, the second sub electrode and the third sub-electrode includes metal molybdenum.
8. piezoelectric element according to claim 1-4, which is characterized in that
The material of first piezoelectric layer and second piezoelectric layer includes at least one of AlN, PZT, ZnO, PVDF material
Material.
9. a kind of ultrasonic sensor, which is characterized in that including such as described in any item piezoelectric elements of claim 1-8.
10. ultrasonic sensor according to claim 9, which is characterized in that
It further include being set to basal layer of the support plate described in the piezoelectric element far from the first electrode layer side, the base
Cavity is provided between bottom and the support plate.
11. ultrasonic sensor according to claim 10, which is characterized in that
Acoustic impedance regulating course, the acoustic impedance regulating course and the substrate are additionally provided between the basal layer and the support plate
The cavity is set between layer, and the acoustic impedance values of the acoustic impedance regulating course are more than or less than the acoustic impedance values of the support plate.
12. a kind of preparation method of piezoelectric element characterized by comprising
The first electrode layer being stacked, the second electrode lay and third electrode layer are sequentially formed on the supporting plate, and described
The first piezoelectric layer is formed between one electrode layer and the second electrode lay, the second electrode lay and the third electrode layer it
Between form the second piezoelectric layer；
The first electrode layer includes multiple first sub-electrodes, and the second electrode lay includes multiple second sub electrodes, and described
Three electrode layers include one or more third sub-electrodes, and along the thickness direction of the support plate, first sub-electrode is just
Projection and the orthographic projection of the second sub electrode are non-overlapping, the orthographic projection of multiple first sub-electrodes and multiple second sons
The orthographic projection of electrode is Chong Die with the orthographic projection of the third sub-electrode；Or
The first electrode layer includes one or more first sub-electrodes, and the second electrode lay includes multiple second sub electrodes,
The third electrode layer includes multiple third sub-electrodes, and along the thickness direction of the support plate, the second sub electrode is just
Projection and the orthographic projection of the third sub-electrode are non-overlapping, the orthographic projection of multiple second sub electrodes and multiple third
The orthographic projection of electrode is Chong Die with the orthographic projection of first sub-electrode；Or
The first electrode layer includes multiple first sub-electrodes, and the second sub electrode layer includes one or more the second son electricity
Pole, the third electrode layer include multiple third sub-electrodes, and along the thickness direction of the support plate, first sub-electrode
Orthographic projection and the orthographic projection of the third sub-electrode are non-overlapping, the orthographic projection and multiple thirds of multiple first sub-electrodes
The orthographic projection of sub-electrode is Chong Die with the orthographic projection of the second sub electrode.
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| CN114509651A (en) * | 2022-04-15 | 2022-05-17 | 湖北工业大学 | GIS partial discharge external ultrasonic and ultrahigh frequency integrated sensor and detection method |
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| CN108664913A (en) * | 2018-05-04 | 2018-10-16 | 京东方科技集团股份有限公司 | A kind of sensor and preparation method thereof, panel and identification device |
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Application publication date: 20191018 |