CN107493086A - Temperature-compensating SAW resonator and preparation method thereof - Google Patents
Temperature-compensating SAW resonator and preparation method thereof Download PDFInfo
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- CN107493086A CN107493086A CN201710784976.6A CN201710784976A CN107493086A CN 107493086 A CN107493086 A CN 107493086A CN 201710784976 A CN201710784976 A CN 201710784976A CN 107493086 A CN107493086 A CN 107493086A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14544—Transducers of particular shape or position
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The present invention provides a kind of temperature-compensating SAW resonator, the temperature-compensating SAW resonator includes substrate, the piezoelectric substrate above the substrate and the interdigital structure being formed on the piezoelectric substrate, wherein, bonded layer is included between the substrate and the piezoelectric substrate, to form composite base plate.The temperature-compensating SAW resonator of the present invention can effectively reduce the difficulty of technique；The stability and reliability of technique are improved, and improves the yield of product；Frequency-temperature coefficient is reduced, improves the performance of device.
Description
Technical field
The present invention relates to a kind of new type of SAW resonator, more particularly to a kind of using based on bonding technology formation
Temperature-compensating SAW resonator and preparation method thereof.
Background technology
With the development of wireless communication applications, requirement more and more higher of the people for data transmission bauds.In mobile communication
Field, the first generation are analogue techniques, and the second generation realizes digitized voice communications, and the third generation (3G) is using multimedia communication as spy
Sign, traffic rate is brought up to 1Gbps by forth generation (4G), time delay is reduced to 10ms, and the 5th generation (5G) was a new generation after 4G
Mobile communication technology, although 5G technical specification is also no completely clear and definite with standard, compared with 3G, 4G, its network transmission speed
Rate and network capacity will be substantially improved.If what is mainly solved from 1G to 4G is interpersonal communication, 5G will solve people
With people and thing outside people, the communication between thing and thing, i.e. all things on earth interconnects, and realizes the hope of " information follow one's inclinations to, all things on earth tentacle and "
Scape.
Corresponding with data transfer rate rising is high usage and the complication of communications protocol of frequency spectrum resource.Due to frequency spectrum
It is limited, in order to meet the needs of data transfer rate, it is necessary to make full use of frequency spectrum；Simultaneously in order to meet the needs of data transfer rate, since 4G
Also use carrier aggregation technology so that an equipment can utilize different carrier spectrum transmission data simultaneously.On the other hand,
In order to support enough data transmission rates in limited bandwidth, communication protocol becomes to become increasingly complex, therefore to radio system
Various performances it is also proposed strict demand.
In RF front-end module, radio-frequency filter plays vital effect.It can be by out-of-band interference and noise
Filter out to meet the needs of radio system and communications protocol are for signal to noise ratio.As communication protocol becomes increasingly complex, in frequency band
Outer requirement also more and more higher so that the design of wave filter increasingly has challenge.In addition, the frequency band number supported with mobile phone needs
Mesh constantly rises, and the wave filter quantity for needing to use in every Mobile phone is also constantly rising.
Radio-frequency filter most main flow is achieved in that SAW filter and based on FBAR at present
The wave filter of technology.FBAR is mainly used in high frequency (such as frequency range more than 2.5GHz), and manufacturing process compares
Complexity, cost are higher.And SAW filter is mainly used in middle low frequency (such as less than 2.5GHz frequency range), manufacturing process phase
To fairly simple, cost is much lower compared to FBAR, is easier to be received by market.
In 4G communication eras, because the frequency of SAW filter is had a great influence by temperature in use, film bulk acoustic
Wave filter is increasingly becoming the main flow selection in market.In view of the cost advantage of surface acoustic wave, studying how to improve always in the industry
The temperature compensation characteristic of surface acoustic wave.Traditional method is in interdigital (IDT) surface deposition layer of silicon dioxide (SiO2), amorphous
Silica membrane there is negative temperature coefficient, can just offset the positive temperature coefficient of piezoelectric substrate.Although this method is
Through commercialization, but still there is its limitation, for example the control of the material and thickness of silica requires high, in general process conditions are very
Difficulty reaches.
The content of the invention
The purpose of the present invention is the defects of being directed to prior art, it is proposed that a kind of SAW resonator, the temperature are mended
Repaying SAW resonator includes substrate, the piezoelectric substrate above the substrate and is formed at the piezoelectric substrate
On interdigital structure, wherein, bonded layer is included between the substrate and the piezoelectric substrate, to form composite base plate.
As an improvement the bonded layer includes deposition first sticking film layer, being deposited on institute on the substrate
Second stated on piezoelectric substrate sticks film layer.
As an improvement the material of the interdigital structure include aluminium, titanium, copper, chromium, silver combination or one of them.
As an improvement the bonded layer includes silica or silicon oxynitride.
The invention also provides the preparation method of the temperature-compensating SAW resonator for the present invention, the preparation side
Method includes：
In one layer of pasting material of deposition on substrate, stick film layer to form first；
One layer is deposited on piezoelectric substrate and sticks thin-film material, sticks film layer to form second；
Described first, which sticks film layer, sticks film layer with described second and is bonded, so that the substrate and piezoelectric
Substrate is bonded to form composite base plate；
The deposited metal material on the piezoelectric substrate, to form metal film layer；
The metal film layer is patterned, to form metal interdigital structure.
As an improvement the preparation method also includes：Described first, which sticks film layer and described second, sticks film
Layer carries out surface activation process before bonding.
As an improvement the preparation method also includes：Described first stick film layer stick with described second it is thin
Film layer be bonded when, by the composite base plate after fitting in oxygen or nitrogen environment the high-temperature process through a few hours.
As an improvement the technique of deposited metal material includes electron beam evaporation, physical vapour deposition (PVD), ald
Or pulsed laser deposition.
As an improvement the metal material includes copper, aluminium, chromium, silver, titanium or combinations thereof.
It is as an improvement further comprising the steps of：The piezoelectric substrate after para-linkage is thinned and polished
Processing.
Beneficial effects of the present invention：Compared to traditional temperature-compensating SAW resonator, the present invention is by new
Bonding substrate on directly form interdigital structure, avoid the more harsh silica deposition of technological requirement and planarization, have
Effect reduces the difficulty of technique, improves the stability and reliability of technique；By the way that piezoelectric substrate is bonded with conventional substrate, shape
The composite base plate larger into intensity, the composite base plate can substantially reduce piezoelectric frangible possibility in process, so as to carry
The yield of high product；The effectively thickness of control piezoelectric membrane, so as to reduce frequency-temperature coefficient, improves the performance of device.
Brief description of the drawings
Fig. 1 is the temperature-compensating SAW resonator cross-sectional view of the present invention；
Fig. 2 is the preparation technology flow chart for the temperature-compensating SAW resonator of the present invention；
Fig. 3 is the relationship graph of the ratio and frequency-temperature compensation coefficient of substrate thickness and piezoelectric thickness.
Embodiment
Below by drawings and examples, technical scheme is described in further detail.
Embodiment 1
Fig. 1 is the cross-sectional view of the temperature-compensating SAW resonator of the present invention.As shown in figure 1, the temperature
Compensation SAW resonator includes substrate 100, and the substrate is as support substrate, such as can be silicon chip, sapphire etc.；Set
First on a substrate 100 sticks film layer 200；Side sets piezoelectric substrate 300, the piezoelectric base on a substrate 100
Plate 300 for example, lithium niobate, lithium tantalate, aluminium nitride, zinc oxide etc., the surface relative with substrate 100 of piezoelectric substrate 300
Stick film layer 210 provided with second；Include interdigital structure, the material example of the interdigital structure above piezoelectric substrate 300
Such as it is aluminium, titanium, copper, chromium, silver or combinations thereof.
Specifically, bonded layer is included between substrate 100 and piezoelectric substrate 300, to form composite base plate, wherein, should
Bonded layer includes deposition on a substrate 100 first stick film layer 200, be deposited on piezoelectric substrate 300 second glutinous
Attached film layer 210, and bonded layer includes silica or silicon oxynitride.In addition, first to stick film layer 200 and second glutinous
The material of attached film layer 210 is, for example, silica, silicon oxynitride etc..
Further, one layer of pasting material is preferably deposited on the surface of one side or the substrate of twin polishing 100, with
Form first and stick film layer 200.In addition, in the lower surface of piezoelectric substrate 300, it is i.e. relative with the upper surface of substrate 100
Surface stick thin-film material provided with one layer, second stick film layer 210 to be formed, the layer stick thin-film material 210 be used for
The pasting material 200 of substrate 100 combines.Specifically, this layer sticks thin-film material 210 pressure is for example arranged on by way of deposition
On electric material substrate 300, the depositional mode is preferably thermal oxide growth technique.
In addition, the temperature-compensating SAW resonator of the present invention is formed by bonding technology, wherein, including pass through bonding
Mode substrate 100 and piezoelectric substrate 300 is combined to form composite base plate, for example pass through deposition on the composite base plate
Technique forms metal interdigital structure, and the technique of deposition is swashed using electron beam evaporation, physical vapour deposition (PVD), ald, pulse
Light deposition etc..
The present invention proposes a kind of brand-new temperature-compensating SAW resonator, passes through piezoelectric substrate and branch support group
The bonding of piece, the composite base plate of temperature-compensating SAW resonator is formed, metal foil is provided with the composite base plate of the bonding
Film, the interdigital structure of resonator is formed in the metallic film, said structure of the invention realizes support substrate and piezoelectric
The good combination of substrate, and the thickness of piezoelectric substrate is effectively controlled, so as to reduce frequency-temperature coefficient, improve device
The performance of part.
Embodiment 2
Fig. 2 is the preparation technology flow chart of the temperature-compensating SAW resonator of the present invention.It is as shown in Fig. 2 of the invention
A kind of preparation method of the temperature-compensating SAW resonator for embodiment 1 is also proposed, the preparation method includes following
Step：
(a) prepare the substrate 100 of single or double polishing, wherein polishing upwardly, carry out standard cleaning.Then in silicon chip
Surface deposits one layer of pasting material, sticks film layer 200 to form first, first material for sticking film layer 200 for example may be used
To be silica, silicon oxynitride etc..As shown in Fig. 2 (a).
(b) deposit one layer on piezoelectric substrate 300 and stick thin-film material, stick film layer 210 to form second, should
Second stick film layer 210 stick with first film layer 200 depositing operation it is identical, preferably thermal oxide growth technique.Such as Fig. 2
(b) shown in.
(c) substrate 100 and piezoelectric substrate 300 are subjected to silicon-silicon bond conjunction, to form composite base plate.Before bonding,
Stick film layer 200 and second to first and stick the processing of the progress surface active of film layer 210, such as be dipped in certain temperature
The solution containing oxidant in, conventional oxidizing agent solution has dioxysulfate water, dust technology etc., and conventional solution temperature is general
It is 75 DEG C~110 DEG C.In bonding, stick film layer 200 and second by first and stick film layer 210 and be bonded, so that substrate 100
Composite base plate is formed with the fitting of piezoelectric substrate 300, the composite base plate after fitting is in oxygen or nitrogen environment through a few hours
High-temperature process, be consequently formed good bonding.As shown in Fig. 2 (c).
(d) after bonding, thinned and polishing is carried out to piezoelectric substrate 300, the piezoelectric base after being thinned
The thickness of plate 300 is in the range of 5~100 microns.After polishing, piezoelectric substrate 300 is cleaned.Such as Fig. 2
(d) shown in.
(e) in the surface deposited metal material of piezoelectric substrate 300, to form metal film layer 400.The metal material
Can be aluminium, titanium, copper, gold, chromium, silver etc. or combinations thereof, the technique of deposition is sunk for example with electron beam evaporation, physical vapor
Product, ald, pulsed laser deposition etc..As shown in Fig. 2 (e).
(f) after carrying out photolithography patterning to metal film layer 400, metal interdigital structure is formed.As shown in Fig. 2 (f).
Piezoelectric substrate is bonded on the substrate of low thermal coefficient of expansion by structure of the present invention, when ambient temperature changes,
Because the thermal coefficient of expansion of substrate is than relatively low, the influence for receiving temperature change that the device above it also can be less, so as to realize
The temperature compensation effect of device.So that baseplate material is silicon, piezoelectric is lithium tantalate as an example, test frequency temperature compensation coefficient
(TCF), referring to Fig. 3, abscissa characterizes the ratio of substrate thickness and piezoelectric thickness, and ordinate represents frequency-temperature compensation system
Number (TCF).It can be seen that the ratio of substrate thickness and piezoelectric thickness is bigger, frequency-temperature compensation coefficient is closer to zero.This
Sample can be realized improves the effect of temperature-compensating by controlling the thickness of piezoelectric in technique.Compared with prior art, originally
The temperature-compensating SAW resonator of invention avoids technique by directly forming interdigital structure on the composite base plate of bonding
It is required that more harsh silica deposition and planarization.Thus, it is possible to effectively reduce the difficulty of technique, and improve technique
Stability and reliability.Secondly as piezoelectric substrate is more crisp, it is easily broken in manufacturing process, greatly affected production
The yield of product, in the present embodiment by the way that piezoelectric substrate is bonded with substrate, to form the larger composite base plate of intensity.
The composite base plate can substantially reduce piezoelectric frangible possibility in process, so as to improve the yield of product.In addition, this hair
The bright thickness that can also effectively control piezoelectric substrate, so as to reduce frequency-temperature coefficient, improves the performance of device.
It should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention and it is unrestricted, although with reference to compared with
The present invention is described in detail good embodiment, it will be understood by those within the art that, can be to the skill of the present invention
Art scheme is modified or equivalent substitution, without departing from the spirit and scope of technical solution of the present invention.
Claims (10)
1. a kind of temperature-compensating SAW resonator, it is characterised in that the temperature-compensating SAW resonator includes base
Piece, the piezoelectric substrate above the substrate and the interdigital structure being formed on the piezoelectric substrate, wherein, it is described
Include bonded layer between substrate and the piezoelectric substrate, to form composite base plate.
2. temperature-compensating SAW resonator according to claim 1, it is characterised in that the bonded layer includes deposition
First on the substrate stick film layer, be deposited on the piezoelectric substrate second stick film layer.
3. temperature-compensating SAW resonator according to claim 1, it is characterised in that the material of the interdigital structure
Including aluminium, titanium, copper, chromium, silver combination or one of them.
4. temperature-compensating SAW resonator according to claim 1, it is characterised in that the bonded layer includes dioxy
SiClx or silicon oxynitride.
5. a kind of preparation method of temperature-compensating SAW resonator, it is characterised in that the preparation method includes：
In one layer of pasting material of deposition on substrate, stick film layer to form first；
One layer is deposited on piezoelectric substrate and sticks thin-film material, sticks film layer to form second；
Described first, which sticks film layer, sticks film layer with described second and is bonded, so that the substrate and piezoelectric substrate
Fitting forms composite base plate；
The deposited metal material on the piezoelectric substrate, to form metal film layer；
The metal film layer is patterned, to form metal interdigital structure.
6. the preparation method of temperature-compensating SAW resonator according to claim 5, it is characterised in that the preparation
Method also includes：
Described first sticks film layer sticks film layer and carries out surface activation process before bonding with described second.
7. the preparation method of temperature-compensating SAW resonator according to claim 5, it is characterised in that the preparation
Method also includes：
When described first sticks film layer and sticks film layer with described second and be bonded, by the composite base plate after fitting in oxygen or
High-temperature process through a few hours in nitrogen environment.
8. the preparation method of temperature-compensating SAW resonator according to claim 5, it is characterised in that deposited metal
The technique of material includes electron beam evaporation, physical vapour deposition (PVD), ald or pulsed laser deposition.
9. the preparation method of temperature-compensating SAW resonator according to claim 5, it is characterised in that the metal
Material includes copper, aluminium, chromium, silver, titanium or combinations thereof.
10. the preparation method of temperature-compensating SAW resonator according to claim 5, it is characterised in that also include
Following steps：The piezoelectric substrate after para-linkage be thinned and polishing.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108539006A (en) * | 2018-04-17 | 2018-09-14 | 杭州左蓝微电子技术有限公司 | A kind of temperature-compensating SAW filter and preparation method thereof |
| CN109245742A (en) * | 2018-11-27 | 2019-01-18 | 杭州左蓝微电子技术有限公司 | One kind combining resonator based on surface acoustic wave and solid reflecting layer film bulk acoustic |
| CN109245741A (en) * | 2018-07-10 | 2019-01-18 | 深圳市眼景科技有限公司 | A kind of infrared detector |
| CN110113025A (en) * | 2019-04-28 | 2019-08-09 | 清华大学 | A kind of temperature-compensating SAW device and the preparation method and application thereof integrated convenient for radio-frequency front-end |
| CN110535451A (en) * | 2019-09-22 | 2019-12-03 | 电子科技大学 | A kind of SAW resonator of novel electrode structure |
| CN111697943A (en) * | 2020-07-02 | 2020-09-22 | 电子科技大学 | High-frequency high-coupling-coefficient piezoelectric film bulk acoustic resonator |
| CN112436815A (en) * | 2020-11-19 | 2021-03-02 | 广东广纳芯科技有限公司 | Temperature compensation type surface acoustic wave device and manufacturing method thereof |
| CN112448687A (en) * | 2020-11-23 | 2021-03-05 | 广东广纳芯科技有限公司 | TC-SAW filter manufacturing method |
| WO2022028080A1 (en) * | 2020-08-07 | 2022-02-10 | 展讯通信（上海）有限公司 | Wafer-level surface acoustic wave filter and packaging method |
| WO2022121958A1 (en) * | 2020-12-10 | 2022-06-16 | 诺思(天津)微系统有限责任公司 | Acoustic wave resonator having temperature compensation layer, and filter and electronic device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5446330A (en) * | 1993-03-15 | 1995-08-29 | Matsushita Electric Industrial Co., Ltd. | Surface acoustic wave device having a lamination structure |
| US20090085437A1 (en) * | 2007-09-28 | 2009-04-02 | Cole Melanie W | Hybrid thin film heterostructure modular vibration control apparatus and methods for fabrication thereof |
| US20140139075A1 (en) * | 2011-07-29 | 2014-05-22 | Murata Manufacturing Co., Ltd. | Piezoelectric device and method for producing piezoelectric device |
| CN104634772A (en) * | 2015-02-10 | 2015-05-20 | 中国科学院上海应用物理研究所 | Method for preparing surface-enhanced Raman spectrum substrate and substrate prepared by using method |
| CN104734564A (en) * | 2015-04-14 | 2015-06-24 | 大连理工大学 | Full-interdigital electrode micro-piezoelectric thick film vibration energy collector and manufacturing method thereof |
| CN105978520A (en) * | 2016-05-12 | 2016-09-28 | 电子科技大学 | SAW device of multilayer structure and preparation method of SAW device |
| CN106961258A (en) * | 2017-05-04 | 2017-07-18 | 杭州左蓝微电子技术有限公司 | A kind of cavity type SAW resonator and its processing method |
| CN207184433U (en) * | 2017-09-04 | 2018-04-03 | 杭州左蓝微电子技术有限公司 | Temperature-compensating SAW resonator |
-
2017
- 2017-09-04 CN CN201710784976.6A patent/CN107493086B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5446330A (en) * | 1993-03-15 | 1995-08-29 | Matsushita Electric Industrial Co., Ltd. | Surface acoustic wave device having a lamination structure |
| US20090085437A1 (en) * | 2007-09-28 | 2009-04-02 | Cole Melanie W | Hybrid thin film heterostructure modular vibration control apparatus and methods for fabrication thereof |
| US20140139075A1 (en) * | 2011-07-29 | 2014-05-22 | Murata Manufacturing Co., Ltd. | Piezoelectric device and method for producing piezoelectric device |
| CN104634772A (en) * | 2015-02-10 | 2015-05-20 | 中国科学院上海应用物理研究所 | Method for preparing surface-enhanced Raman spectrum substrate and substrate prepared by using method |
| CN104734564A (en) * | 2015-04-14 | 2015-06-24 | 大连理工大学 | Full-interdigital electrode micro-piezoelectric thick film vibration energy collector and manufacturing method thereof |
| CN105978520A (en) * | 2016-05-12 | 2016-09-28 | 电子科技大学 | SAW device of multilayer structure and preparation method of SAW device |
| CN106961258A (en) * | 2017-05-04 | 2017-07-18 | 杭州左蓝微电子技术有限公司 | A kind of cavity type SAW resonator and its processing method |
| CN207184433U (en) * | 2017-09-04 | 2018-04-03 | 杭州左蓝微电子技术有限公司 | Temperature-compensating SAW resonator |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108539006A (en) * | 2018-04-17 | 2018-09-14 | 杭州左蓝微电子技术有限公司 | A kind of temperature-compensating SAW filter and preparation method thereof |
| CN109245741A (en) * | 2018-07-10 | 2019-01-18 | 深圳市眼景科技有限公司 | A kind of infrared detector |
| CN109245742A (en) * | 2018-11-27 | 2019-01-18 | 杭州左蓝微电子技术有限公司 | One kind combining resonator based on surface acoustic wave and solid reflecting layer film bulk acoustic |
| CN109245742B (en) * | 2018-11-27 | 2024-03-01 | 杭州左蓝微电子技术有限公司 | Film bulk acoustic wave combined resonator based on surface acoustic wave and solid reflection layer |
| CN110113025A (en) * | 2019-04-28 | 2019-08-09 | 清华大学 | A kind of temperature-compensating SAW device and the preparation method and application thereof integrated convenient for radio-frequency front-end |
| CN110535451A (en) * | 2019-09-22 | 2019-12-03 | 电子科技大学 | A kind of SAW resonator of novel electrode structure |
| CN111697943A (en) * | 2020-07-02 | 2020-09-22 | 电子科技大学 | High-frequency high-coupling-coefficient piezoelectric film bulk acoustic resonator |
| CN111697943B (en) * | 2020-07-02 | 2023-09-22 | 电子科技大学 | High-frequency high-coupling coefficient piezoelectric film bulk acoustic resonator |
| US11632095B2 (en) | 2020-08-07 | 2023-04-18 | Spreadtrum Communications (Shanghai) Co., Ltd. | Wafer level surface acoustic wave filter and package method |
| WO2022028080A1 (en) * | 2020-08-07 | 2022-02-10 | 展讯通信（上海）有限公司 | Wafer-level surface acoustic wave filter and packaging method |
| CN112436815A (en) * | 2020-11-19 | 2021-03-02 | 广东广纳芯科技有限公司 | Temperature compensation type surface acoustic wave device and manufacturing method thereof |
| CN112436815B (en) * | 2020-11-19 | 2024-03-15 | 广东广纳芯科技有限公司 | Temperature-compensated surface acoustic wave device and method of manufacturing the same |
| CN112448687A (en) * | 2020-11-23 | 2021-03-05 | 广东广纳芯科技有限公司 | TC-SAW filter manufacturing method |
| CN112448687B (en) * | 2020-11-23 | 2024-05-03 | 广东广纳芯科技有限公司 | TC-SAW filter manufacturing method |
| WO2022121958A1 (en) * | 2020-12-10 | 2022-06-16 | 诺思(天津)微系统有限责任公司 | Acoustic wave resonator having temperature compensation layer, and filter and electronic device |
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| CN107493086B (en) | 2023-08-15 |
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