CN206673927U - FBAR and wave filter - Google Patents
FBAR and wave filter Download PDFInfo
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- CN206673927U CN206673927U CN201720139478.1U CN201720139478U CN206673927U CN 206673927 U CN206673927 U CN 206673927U CN 201720139478 U CN201720139478 U CN 201720139478U CN 206673927 U CN206673927 U CN 206673927U
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Abstract
The utility model proposes a kind of FBAR and wave filter, the resonator includes the silicon chip with air-gap and the piezoelectricity sandwich structure being covered on the air-gap；The piezoelectricity sandwich structure includes top electrode, piezoelectric and hearth electrode, and wherein top electrode, piezoelectric, hearth electrode stacks gradually；The top electrode, the piezoelectric, the hearth electrode are graphical one by one, and it is graphical after from top to bottom each aspect product successively increase so that the hearth electrode, the piezoelectric, the edge of the top electrode are retracted successively, are formed step-like；The wherein side stepped edge of the piezoelectricity sandwich structure is respectively positioned on the outside at homonymy air-gap edge.The utility model effectively prevent the penalty caused by piezoelectric membrane growth defect caused by edge is lofty, by covering organic film in the specific region of sandwich structure, absorbs harmful spurious resonance, further improves device performance and reliability.
Description
Technical field
A kind of FBAR is the utility model is related to, more particularly to a kind of resonator piezoelectricity sandwich structure
FBAR and wave filter.
Background technology
With the development of wireless communication applications, requirement more and more higher of the people for data transmission bauds.In mobile communication
Field, the first generation are analogue techniques, and the second generation realizes digitized voice communications, and the third generation (3G) is using multimedia communication as spy
Sign, traffic rate is brought up to 1Gbps by forth generation (4G), time delay is reduced to 10ms, and the 5th generation (5G) was a new generation after 4G
Mobile communication technology, although 5G technical specification is also no completely clear and definite with standard, compared with 3G, 4G, its network transmission speed
Rate and network capacity will be substantially improved.If what is mainly solved from 1G to 4G is interpersonal communication, 5G will solve people
With people and thing outside people, the communication between thing and thing, i.e. all things on earth interconnects, and realizes the hope of " information follow one's inclinations to, all things on earth tentacle and "
Scape.
Corresponding with data transfer rate rising is high usage and the complication of communications protocol of frequency spectrum resource.Due to frequency spectrum
It is limited, in order to meet the needs of data transfer rate, it is necessary to make full use of frequency spectrum；Simultaneously in order to meet the needs of data transfer rate, since 4G
Also use carrier aggregation technology so that an equipment can utilize different carrier spectrum transmission data simultaneously.On the other hand,
In order to support enough data transmission rates in limited bandwidth, communication protocol becomes to become increasingly complex, therefore to radio system
Various performances it is also proposed strict demand.
In RF front-end module, radio-frequency filter plays vital effect.It can be by out-of-band interference and noise
Filter out to meet the needs of radio system and communications protocol are for signal to noise ratio.As communication protocol becomes increasingly complex, in frequency band
Outer requirement also more and more higher so that the design of wave filter increasingly has challenge.In addition, the frequency band number supported with mobile phone needs
Mesh constantly rises, and the wave filter quantity for needing to use in every Mobile phone is also constantly rising.
Radio-frequency filter most main flow is achieved in that SAW filter and based on FBAR at present
The wave filter of technology.SAW filter is used below proper in 1.5GHz due to the limitation of its own.However,
Current home control network communication protocol already using the frequency range more than 2.5GHz, at this moment must use and be based on film bulk acoustic resonator
The wave filter of device technology.
The structure and preparation method of FBAR have had a lot.In conventional structure and preparation method,
It can be patterned to form hearth electrode after the hearth electrode film of FBAR has been deposited, then schemed again
Piezoelectric membrane is grown on hearth electrode after shape.Because the hearth electrode edge after graphical is usually right angle or better corrosion
Tapered structure, at this edge, the direction vertical with substrate surface that piezoelectric membrane can not need along us grows, and thus can
Cause the piezoelectric membrane performance of this part bad, or even crackle can be formed, performance and the ESD for leveraging resonator are reliable
Property.
Utility model content
The purpose of this utility model is the defects of being directed to prior art, it is proposed that a kind of resonator piezoelectricity three once prepared
The FBAR and wave filter of Mingzhi's structure.During resonator is prepared, figure is not carried out to hearth electrode film
Shape, the direct complete piezoelectric membrane of a secondary growth, the problem of prior art being avoided to exist.
The utility model proposes scheme it is as follows：
A kind of FBAR, the resonator include the silicon chip with air-gap and are covered in the air-gap
On piezoelectricity sandwich structure；The piezoelectricity sandwich structure includes top electrode, piezoelectric and hearth electrode, wherein top electrode,
Piezoelectric, hearth electrode stack gradually；The top electrode, the piezoelectric, the hearth electrode after respective deposited intact again
It is graphical one by one, and it is graphical after top electrode, piezoelectric thin film layer, bottom electrode layer area successively increase from top to bottom so that it is described
Hearth electrode, the piezoelectric, the edge of the top electrode are retracted successively, are formed step-like；The piezoelectricity sandwich structure
Wherein side stepped edge is respectively positioned on the outside at homonymy air-gap edge.
Further, in addition to passivation layer, the passivation layer covering are located at the step-like side on the outside of the air-gap edge
Edge.
Further, in addition to organic thin film layer, the organic thin film layer cover the piezoelectricity sandwich structure and are located at institute
The top electrode edge of the stepped edge on the outside of air-gap edge is stated to the region at homonymy air-gap edge.
Further, the material of the organic thin film layer is polyimides.
Further, the piezoelectric includes aluminium nitride, zinc oxide, lithium niobate, lithium tantalate, lead titanate piezoelectric ceramics
One of or combination.
Further, the top electrode, the hearth electrode material include tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium,
One of chromium, gold or combination.
The utility model also includes a kind of wave filter, including FBAR of the present utility model.
The utility model is patterned one by one again after the deposition by completing piezoelectricity sandwich three level stack material, is had
Effect avoids the penalty caused by piezoelectric membrane growth defect caused by edge is lofty, in addition, by sandwich
The specific region covering organic film of structure, absorbs harmful spurious resonance, further improves device performance and reliability.
Brief description of the drawings
Fig. 1 is a kind of FBAR sectional structure chart of the present utility model and plane overlooking structure figure；
Fig. 2 is a kind of preparation technology flow chart of FBAR of the present utility model.
Embodiment
Below by drawings and examples, the technical solution of the utility model is described in further detail.
Embodiment 1
The utility model discloses a kind of FBAR, for its structure referring to Fig. 1, wherein Fig. 1 (a) is section
Structure chart, Fig. 1 (b) are top plan view.Wherein in order to illustrate the interconnected relationship of multiple FBARs, include 2
Individual FBAR and its interconnection structure.Specifically：Including substrate 101, the substrate is, for example, silicon chip；Formed in substrate
The the first air-gap 109-1 and the second air-gap 109-2 of 101 upper surfaces；Positioned at the first air-gap 109-1 and the second air-gap
Sandwich piezoelectric membrane stacked structure above 109-2, including first electrode 103-1 and second electrode 103-2, are formed first
The first piezoelectric layer 104-1 and the second piezoelectric layer 104-2 above electrode 103-1 and second electrode 103-2, formed in the first pressure
The 3rd electrode 105-1 and the 4th electrode 105-2 above electric layer 104-1 and the second piezoelectric layer 104-2.
In the utility model, first electrode, second electrode, the 3rd electrode, the 4th electrode material can include tungsten, molybdenum, platinum
One of platinum, ruthenium, iridium, titanium tungsten, aluminium, chromium, gold or combination, the first piezoelectric layer, the material of the second piezoelectric layer can include：Nitridation
One of aluminium (AlN), zinc oxide (ZnO), lithium niobate (LiNbO3), lithium tantalate (LiTaO3), lead titanate piezoelectric ceramics (PZT) or
Person combines.
First electrode 103-1 and second electrode 103-2 is complete respectively in one direction covers the first air-gap 109-1
With the second air-gap 109-2；First piezoelectric layer 104-1 and the second piezoelectric layer 104-2 is located at first electrode 103-1 and second respectively
On electrode 103-2, the first piezoelectric layer 104-1 left end can be concordant with the first air-gap 109-1 left end；Preferably, first
Piezoelectric layer 104-1 left end is located on the right side of the first air-gap 109-1 left end but left positioned at the first air-gap 109-1 right-hand member
Side；Similarly, the second piezoelectric layer 104-2 left end can be concordant with the second air-gap 109-2 left end；Preferably, the second pressure
Electric layer 104-2 is located on the right side of the second air-gap 109-2 left end but on the left of the second air-gap 109-2 right-hand member.First pressure
Electric layer 104-1 right-hand members are located on the right side of the first air-gap 109-1 right-hand member but on the left of first electrode 103-1 right-hand member, and second
Piezoelectric layer 104-2 right-hand members are located on the right side of the second air-gap 109-2 right-hand member but on the left of second electrode 103-2 right-hand members；3rd
Electrode 105-1 left ends can be with the first piezoelectric layer 104-1 left end flush, it is preferable that the 3rd electrode 105-1 is positioned at the first pressure
On the right side of electric layer 104-1 left ends but on the left of the first air-gap 109-1 right-hand members, the 4th electrode 105-2 left end is positioned at the second pressure
On the right side of electric layer 104-2 left end but on the left of the second air-gap 109-2 right-hand member, the 3rd electrode 105-1 right-hand members are located at first
On the right side of air-gap 109-1 right-hand members but on the left of the first piezoelectric layer 104-1 right-hand members, the 4th electrode 105-2 right-hand members are empty positioned at second
On the right side of air gap 109-2 right-hand members but on the left of the second piezoelectric layer 104-2 right-hand members；First passivation layer 106-1 covers first electrode
103-1, the first piezoelectric layer 104-1, the 3rd electrode 105-1 right-hand member marginal portion, specifically, a first passivation layer 106-1 left side
On the left of right-hand member right-hand member of the end positioned at the first air-gap 109-1 but the right-hand member positioned at the 3rd electrode；Second passivation layer 106-2 coverings the
Two electrode 103-2, the second piezoelectric layer 104-2, the 4th electrode 105-2 right-hand member marginal portion, specifically, the second passivation layer
106-2 left end is located on the right side of the second air-gap 109-2 right-hand member but on the left of the 4th electrode 105-2 right-hand member.It is in addition, right
In adjoining two FBAR formed simultaneously, the first passivation layer 106-1 right-hand member is located at second electrode
On the right side of 103-2 left ends but on the left of the second air-gap 109-2 left ends, and covering part substrate and second electrode 103-2 a left side
End margin part.
FBAR also includes extraction electrode solder joint, wherein the first solder joint 107-1 is located at the first film body sound
On the first electrode 103-1 of wave resonator, the second solder joint 107-3 is by the Top electrode (i.e. the 4th electrode 105-2) of the second resonator
It is drawn out on silicon chip 101 and forms the second solder joint, in this embodiment, in addition to by the first film bulk acoustic wave resonator and the second film
The connection electrode 107-2 that bulk acoustic wave resonator is interconnected, specifically, connection electrode 107-2 left ends are located at the first air-gap
On the right side of 109-1 right-hand members but on the left of the first passivation layer 106-1 left ends, connection electrode 107-2 right-hand members are located at the first passivation layer
On the right side of 106-1 right-hand members but on the left of the second air-gap 109-2 left ends, by the top electrode of the first resonator and the second resonator
Hearth electrode be interconnected.In the present embodiment, the first solder joint 107-1, the second solder joint 107-3, connection electrode 107-2 can
To be common metal material, the laminated film or tungsten material of chromium and gold are commonly used.
In other embodiment, also including the use of organic material, such as polyimides, at least by the 110- in Fig. 1
1 and 110-2 area covers, to suppress the resonance in 110-1 and 110-2 regions.Specifically, 110-1 regions refer to that first is empty
Air gap 109-1 right side edge to the region between the 3rd electrode 105-1 right side edge, 110-2 regions refers to that second is empty
Air gap 109-2 right side edge is to the region between the 4th electrode 105-2 right side edge.
Embodiment 2
In order to illustrate more clearly of the structure of FBAR of the present utility model, Fig. 2 is its specific preparation
Process chart, the preparation flow include：
(a)：Prepare the silicon chip 101 of the single or double polishing as shown in Fig. 2 (a), wherein polishing upwardly, carry out standard
Cleaning.
(b)：Silicon chip 101 is performed etching, forms sacrifice layer hole, wherein etching can use dry etching；In silicon chip
101 surface deposition of sacrificial layer, such as it is phosphorosilicate glass PSG, is fully filled with sacrifice layer hole；To the sacrifice layer on the surface of silicon chip 101
CMP planarization is carried out, the sacrifice layer on the surface of silicon chip 101 is thrown completely and removed totally, forms figure, wherein 102-1 as shown in Fig. 2 (b)
With the sacrifice layer hole that 102-2 is the full PSG of filling.
(c)：Bottom electrode layer 103, piezoelectric thin film layer 104 and upper electrode layer 105 are continuously sequentially depositing on the surface of silicon chip 101,
Form the figure as shown in Fig. 2 (c).In the present embodiment, depositional mode includes vacuum sputtering, thermal evaporation, ion plating etc., wherein pressing
The deposition of thin film layer also includes sol-gal process.The utility model uses and has continuously been sequentially depositing hearth electrode, piezoelectric thin film layer
With the mode of top electrode, can avoid in traditional handicraft, for hearth electrode it is graphical after redeposited piezoelectric membrane when in hearth electrode
The poor or even cracked situation of piezoelectric membrane growth quality caused by edge.
(d) top electrode, piezoelectric thin film layer and hearth electrode are patterned successively, form the figure as shown in Fig. 2 (d).
Wherein first electrode 103-1 is the hearth electrode of the resonator of left side first, and the first piezoelectric layer 104-1 is the piezoelectricity of the first resonator
Film, the 3rd electrode 105-1 are the top electrode of the first resonator；Second electrode 103-2 is the hearth electrode of the resonator of right side second,
Second piezoelectric layer 104-2 is the piezoelectric membrane of the second resonator, and the 4th electrode 105-2 is the top electrode of the second resonator.
(e) in the surface deposit passivation layer of silicon chip 101, and the first passivation layer 106-1 and the second passivation layer are graphically formed
106-2, as shown in Fig. 2 (e).In the present embodiment, the mode of deposit passivation layer includes conventional all applicable patterns, such as
Using PECVD modes.Passivation layer in present embodiment mainly uses the insulating materials of some low-ks, can include nitrogen
SiClx film, silica, aluminium nitride etc..
(f) in the surface metal-layer of silicon chip 101 and graphical, to form the solder joint metal level of resonator or interconnection metal
Layer, include forming the first solder joint 107-1 in the present embodiment, connect the top electrode of the first resonator and the bottom of the second resonator
The interconnection 107-2 of electrode and the second solder joint 107-3, as shown in Fig. 2 (f).Metal level in present embodiment can include
Chromium gold composite membrane or W film.
(h) disk completed after technological process (g) is put into sustained release hydrofluoric acid corrode sacrifice layer hole 102-1 and
Sacrifice layer, such as PSG in 102-2, complete the release of sacrifice layer, form final resonator, as shown in Fig. 2 (h), complete whole
The preparation of resonator.
In addition, it can include following steps, the step is carried out before (h) step：On the surface of silicon chip 101, deposition has
Machine film, such as polyimides and graphical, formation figure as shown in Fig. 2 (g).Polyimides 108-1 and 108-2 have distinguished
All standing such as 110-1 in Fig. 1 and the region represented by 110-2.110-1 regions refer to the first air-gap 109-1 right side in Fig. 1
Lateral edges refer to the second air-gap 109-2 right side to the region between the 3rd electrode 105-1 right side edge, 110-2 regions
Lateral edges are to the region between the 4th electrode 105-2 right side edge.110-1 regions and 110-2 regions due to containing hearth electrode,
Piezoelectric membrane and top electrode, it is understood that there may be parasitic resonance, be harmful to the resonator behavior of design.Pass through the polyimides of covering
108-1 and 108-2 can sponge the spurious resonance that this part is harmful to, and avoid impacting the resonator behavior of design.
It should be noted last that above example is only unrestricted to illustrate the technical solution of the utility model, to the greatest extent
The utility model is described in detail with reference to preferred embodiment for pipe, it will be understood by those within the art that, can be with
The technical solution of the utility model is modified or equivalent substitution, without departing from technical solutions of the utility model spirit and
Scope.
Claims (7)
- A kind of 1. FBAR, it is characterised in that：The resonator includes the silicon chip with air-gap and is covered in Piezoelectricity sandwich structure on the air-gap；The piezoelectricity sandwich structure includes top electrode, piezoelectric and hearth electrode, its Middle top electrode, piezoelectric, hearth electrode stack gradually；The top electrode, the piezoelectric, the hearth electrode are each complete It is graphical one by one again after deposition, and it is graphical after from top to bottom top electrode, piezoelectric thin film layer, bottom electrode layer area successively increase, The edge of the piezoelectricity sandwich structure is in step-like；The wherein side stepped edge of the piezoelectricity sandwich structure is respectively positioned on The outside at homonymy air-gap edge.
- 2. FBAR according to claim 1, it is characterised in that：Also include passivation layer, the passivation layer Stepped edge of the covering on the outside of the air-gap edge.
- 3. FBAR according to claim 1, it is characterised in that：Also include organic thin film layer, it is described to have Machine film layer covers the top electrode edge that the piezoelectricity sandwich structure is located at the stepped edge on the outside of the air-gap edge To the region at homonymy air-gap edge.
- 4. FBAR according to claim 3, it is characterised in that：The material of the organic thin film layer is poly- Acid imide.
- 5. FBAR according to claim 1, it is characterised in that：The piezoelectric comprises at least nitridation One of aluminium, zinc oxide, lithium niobate, lithium tantalate, lead titanate piezoelectric ceramics.
- 6. FBAR according to claim 1, it is characterised in that：The top electrode, the hearth electrode Material comprises at least one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium, chromium, gold.
- 7. a kind of wave filter, including the FBAR described in claim any one of 1-6.
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| CN201720139478.1U CN206673927U (en) | 2017-02-16 | 2017-02-16 | FBAR and wave filter |
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| CN201720139478.1U CN206673927U (en) | 2017-02-16 | 2017-02-16 | FBAR and wave filter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109474255A (en) * | 2018-11-14 | 2019-03-15 | 开元通信技术（厦门）有限公司 | Thin film bulk acoustic wave resonator and preparation method thereof, filter |
| CN111010111A (en) * | 2019-05-31 | 2020-04-14 | 天津大学 | Bulk acoustic wave resonator with additional structure separated from top electrode, filter and electronic device |
| CN111010108A (en) * | 2019-03-02 | 2020-04-14 | 天津大学 | Bulk acoustic wave resonator with recess and air wing structure, filter and electronic device |
| WO2020097829A1 (en) * | 2018-11-14 | 2020-05-22 | 开元通信技术（厦门）有限公司 | Film bulk acoustic wave resonator and manufacturing method therefor, and filter |
| CN111193489A (en) * | 2018-11-14 | 2020-05-22 | 天津大学 | Bulk acoustic wave resonator, filter, and electronic device |
| CN116707477A (en) * | 2023-08-02 | 2023-09-05 | 深圳新声半导体有限公司 | Method for manufacturing Film Bulk Acoustic Resonator (FBAR) filter device |
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2017
- 2017-02-16 CN CN201720139478.1U patent/CN206673927U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109474255A (en) * | 2018-11-14 | 2019-03-15 | 开元通信技术（厦门）有限公司 | Thin film bulk acoustic wave resonator and preparation method thereof, filter |
| WO2020097829A1 (en) * | 2018-11-14 | 2020-05-22 | 开元通信技术（厦门）有限公司 | Film bulk acoustic wave resonator and manufacturing method therefor, and filter |
| CN111193489A (en) * | 2018-11-14 | 2020-05-22 | 天津大学 | Bulk acoustic wave resonator, filter, and electronic device |
| CN111193489B (en) * | 2018-11-14 | 2024-01-26 | 天津大学 | Bulk acoustic wave resonator, filter, and electronic device |
| CN111010108A (en) * | 2019-03-02 | 2020-04-14 | 天津大学 | Bulk acoustic wave resonator with recess and air wing structure, filter and electronic device |
| CN111010111A (en) * | 2019-05-31 | 2020-04-14 | 天津大学 | Bulk acoustic wave resonator with additional structure separated from top electrode, filter and electronic device |
| CN116707477A (en) * | 2023-08-02 | 2023-09-05 | 深圳新声半导体有限公司 | Method for manufacturing Film Bulk Acoustic Resonator (FBAR) filter device |
| CN116707477B (en) * | 2023-08-02 | 2024-04-02 | 深圳新声半导体有限公司 | Method for manufacturing Film Bulk Acoustic Resonator (FBAR) filter device |
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