CN109150135A - Thin film bulk acoustic wave resonator and its processing method based on bonding - Google Patents
Thin film bulk acoustic wave resonator and its processing method based on bonding Download PDFInfo
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- CN109150135A CN109150135A CN201811342403.9A CN201811342403A CN109150135A CN 109150135 A CN109150135 A CN 109150135A CN 201811342403 A CN201811342403 A CN 201811342403A CN 109150135 A CN109150135 A CN 109150135A
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- 239000010409 thin film Substances 0.000 title claims abstract description 56
- 238000003672 processing method Methods 0.000 title claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 239000012528 membrane Substances 0.000 claims abstract description 35
- 239000007772 electrode material Substances 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 21
- 239000010408 film Substances 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052741 iridium Inorganic materials 0.000 claims description 6
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- UPIXZLGONUBZLK-UHFFFAOYSA-N platinum Chemical compound [Pt].[Pt] UPIXZLGONUBZLK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 229910017083 AlN Inorganic materials 0.000 claims description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 5
- 230000005496 eutectics Effects 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 239000005360 phosphosilicate glass Substances 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000004891 communication Methods 0.000 description 22
- 238000005516 engineering process Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 14
- 230000005540 biological transmission Effects 0.000 description 4
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- 238000010586 diagram Methods 0.000 description 2
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- 238000000926 separation method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02094—Means for compensation or elimination of undesirable effects of adherence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The present invention proposes a kind of thin film bulk acoustic wave resonator and its processing method based on bonding, wherein the thin film bulk acoustic wave resonator based on bonding includes: substrate, and the first metal column and the second metal column over the substrate is arranged；And it is set to the piezoelectric membrane stacked structure between first metal column and second metal column, wherein, the piezoelectric membrane stacked structure includes first electrode, piezoelectric layer and second electrode, the piezoelectric layer is between the first electrode and the second electrode, and the first electrode and the second electrode are oppositely arranged, the first electrode is also electrically connected with first metal column, and the second electrode is also electrically connected with second metal column.The present invention is based on the clean-up performances that the thin film bulk acoustic wave resonator of bonding can guarantee sacrificial layer material in cavity, improve the performance of the thin film bulk acoustic wave resonator based on bonding.
Description
Technical field
The present invention relates to a kind of piezoelectric devices, especially a kind of based on the thin film bulk acoustic wave resonator of bonding and its processing side
Method.
Background technique
With the development of wireless communication applications, requirement of the people for data transmission bauds is higher and higher.In mobile communication
Field, the first generation communication technology are analogue techniques, and the second generation communication technology realizes digitized voice communications, and the third generation communicates skill
Art is characterized by multimedia communication, and traffic rate is increased to 1Gbps by the forth generation communication technology, time delay is reduced to 10ms, and the 5th
It is the Technology of New Generation Mobile Communications after the forth generation communication technology for the communication technology, although the technology of the 5th generation communication technology is advised
Model and standard are completely clear not yet, but compared with the third generation communication technology, the forth generation communication technology, network transmission speed and
Network capacity will be substantially improved.If be to solve from the first generation communication technology to the forth generation communication technology master person to person it
Between communication, the 5th generation communication technology will solve person to person except people and object, object and object between communication, i.e., all things on earth interconnect,
Realize the vision of " information follow one's inclinations to, all things on earth tentacle and ".
With data transfer rate rise it is corresponding be frequency spectrum resource high usage and the complication of communications protocol.Due to frequency spectrum
It is limited, in order to meet the needs of data transfer rate, it is necessary to make full use of frequency spectrum；Simultaneously in order to meet the needs of data transfer rate, from forth generation
The communication technology starts to also use carrier aggregation technology, and an equipment is allowed to utilize different carrier spectrum transmission numbers simultaneously
According to.On the other hand, in order to support enough data transmission rates, communication protocol to become to become increasingly complex in limited bandwidth, because
This also proposed stringent demand to the various performances of radio frequency system.
In RF front-end module, radio-frequency filter is played a crucial role.It can be by out-of-band interference and noise
It filters out, to meet the needs of radio frequency system and communications protocol are for signal-to-noise ratio.As communication protocol becomes increasingly complex, in frequency band
Outer requirement is also higher and higher, so that the design of filter increasingly has challenge.In addition, the frequency band number needed support with mobile phone
Mesh constantly rises, and the filter quantity for needing to use in every Mobile phone is also constantly rising.
Currently, radio-frequency filter most mainstream is achieved in that SAW filter and based on thin film bulk acoustic wave resonator
The filter of technology.SAW filter is used below proper in 1.5GHz due to its own limitation.However,
At this moment current home control network communication protocol must use already using the frequency range for being greater than 2.5GHz and be based on film bulk acoustic resonator
The filter of device technology.
The structure and preparation method of thin film bulk acoustic wave resonator have had very much.In previous structure and preparation method,
Mainly using piezoelectric membranes such as aluminium nitride, zinc oxide, PZT as piezoelectric material, and prepare the piezoelectric film material one of high quality
It is directly the emphasis and difficult point in the field.The method of tradition preparation thin film bulk acoustic wave resonator is to perform etching sky to substrate first
Then chamber is filled with sacrificial layer material again.Next then etching depositions of bottom electrode material etches it to form required bottom electricity
Pole shape, on this basis redeposited piezoelectric layer.Sacrificial layer material is finally subjected to wet etching by through-hole.And in above-mentioned work
During skill, the sacrificial layer material in surface cavities is difficult to thoroughly remove, and the adhesion of sacrificial layer residue can finally influence it is thin
The performance of membrane body acoustic resonator.
Summary of the invention
In order to improve the elimination efficiency of sacrificial layer material in prior art technology, guarantee the cleaning of sacrificial layer material in cavity
Degree, improves the performance of thin film bulk acoustic wave resonator, and the present invention devises the thin film bulk acoustic wave resonator based on bonding technology.
Specifically, technical scheme is as follows:
A kind of thin film bulk acoustic wave resonator based on bonding characterized by comprising
Substrate；
The first metal column and the second metal column over the substrate is set；And
The piezoelectric membrane stacked structure being set between first metal column and second metal column, wherein described
Piezoelectric membrane stacked structure includes first electrode, piezoelectric layer and second electrode, and the piezoelectric layer is located at the first electrode and institute
It states between second electrode, and the first electrode and the second electrode are oppositely arranged, the first electrode is also with described first
Metal column electrical connection, the second electrode are also electrically connected with second metal column.
Preferably, the first end of the second electrode is located at the piezoelectric layer towards the surface of the substrate, and described second
The second end of electrode is electrically connected with second metal column, and the surface of the second end of the second electrode and the first electrode
It is flush.
Preferably, the material of the first electrode is one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium.
Preferably, the material of the piezoelectric layer is one of aluminium nitride, zinc oxide, lithium niobate, lithium tantalate.
Preferably, the material of the substrate is monocrystalline silicon, polysilicon, glass, quartz or sapphire.
The processing method that the present invention also proposes a kind of thin film bulk acoustic wave resonator based on bonding, which is characterized in that including
Following steps:
Deposition of electrode material and piezoelectric material on substrate construct piezoelectric membrane stacked structure, wherein the piezoelectric membrane
Stacked structure includes first electrode, piezoelectric layer and second electrode, and the piezoelectric layer is located at the first electrode and second electricity
Between pole, and the first electrode and the second electrode are oppositely arranged；
The first film material is deposited in the electrode material surface；
The first film material is patterned, is formed for connecting the first electrode and the second electrode
Through-hole；
In the first film material surface deposited metal material, the through-hole is filled, is formed for connecting described first
The metal column of electrode and the second electrode；
Remove the first film material；
The metal column and substrate are subjected to eutectic bonding；
Remove the substrate.
Preferably, the deposition of electrode material on substrate and piezoelectric material construct piezoelectric membrane stacked structure, specific to wrap
Include following steps:
The second thin-film material is deposited on substrate；
In the second thin-film material surface deposition of electrode material and piezoelectric material, piezoelectric membrane stacked structure is constructed；
The removing substrate, specifically includes the following steps:
Corrode second thin-film material, so that the substrate is separated with the piezoelectric membrane stacked structure.
Preferably, the piezoelectric membrane stacked structure includes first electrode, piezoelectric layer and second electrode；
It is described in the second thin-film material surface deposition of electrode material and piezoelectric material, construct piezoelectric membrane and stack knot
Structure, specifically includes the following steps:
It in the second thin-film material surface deposition of electrode material, is patterned, constructs first electrode；
Be sequentially depositing piezoelectric material and electrode material in the first electrode surface, be patterned, building piezoelectric layer and
Second electrode.
Preferably, further comprising the steps of: the device behind peeling liner bottom is cleaned.
Preferably, second thin-film material is silica, silicon nitride or phosphosilicate glass.
The method have the benefit that: piezoelectricity sandwich structure is used, is bonded again after layer by layer deposition, effectively
The release of sacrificial layer caused by traditional diamond-making technique is avoided to be not thorough and adhesion problems.Also, the bonding pattern of metal column is used,
Compared to traditional diamond-making technique, bigger cavity is contributed to form, to improve the Q of the thin film bulk acoustic wave resonator based on bonding
Value.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the thin film bulk acoustic wave resonator based on bonding of the embodiment of the present invention；
Fig. 2 is the preparation process flow schematic diagram of the thin film bulk acoustic wave resonator based on bonding of the embodiment of the present invention.
Description of symbols:
100-- substrate；The second thin-film material of 200--；300-- first electrode；400-- piezoelectric layer；500-- second electrode；
600-- the first film material；610-- through-hole；The first metal column of 710--；The second metal column of 720--；800-- substrate.
Specific embodiment
The present invention will be further described in the following with reference to the drawings and specific embodiments.
Embodiment 1
The present invention proposes a kind of novel thin film bulk acoustic wave resonator based on bonding, and specific structure is shown in Figure 1.
Comprising: substrate 100, the first metal column 710 and the second metal column 720 that are arranged on the substrate 100, and it is set to institute
State the piezoelectric membrane stacked structure between the first metal column 710 and second metal column 720, wherein the piezoelectric membrane heap
Stack structure includes first electrode 300, piezoelectric layer 400 and second electrode 500, and the piezoelectric layer 400 is located at the first electrode 300
Between the second electrode 500, and the first electrode 300 and the second electrode 500 are oppositely arranged, the first electrode
300 are also electrically connected with first metal column 710, and the second electrode 500 is also electrically connected with second metal column 720.
The thin film bulk acoustic wave resonator based on bonding of the embodiment of the present invention, using piezoelectricity sandwich structure, in substrate 100
The first metal column 710 of upper setting and the second metal column 720 are effectively prevented sacrificial in cavity with connecting piezoelectric membrane stacked structure
Adhesion problems caused by domestic animal layer release is not thorough, and bigger cavity is contributed to form, to improve the film based on bonding
The Q value of bulk acoustic wave resonator.
Preferably, the first end of the second electrode 500 is located at the piezoelectric layer 400 towards the surface of the substrate 100,
The second end of the second electrode 500 is electrically connected with second metal column 720, and the second end of the second electrode 500 with
The surface of the first electrode 300 is flush, and in order to draw two electrodes, and component is facilitated to make.
Preferably, the first electrode 300 is one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium；The second electrode
500 material is one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium, is conducive to the electric conductivity for improving electrode.
Preferably, the material of the piezoelectric layer 400 is one of aluminium nitride, zinc oxide, lithium niobate, lithium tantalate.
Preferably, the material of the substrate 100 is monocrystalline silicon, polysilicon, glass, quartz or sapphire.
Embodiment 2
Referring to fig. 2, the thin film bulk acoustic wave resonator based on bonding of the embodiment of the present invention 1 can pass through following processing step
Manufacture:
The silicon wafer for preparing single or double polishing, as substrate 100, and polishing faces upward, and carries out standard cleaning, such as Fig. 2
(a) shown in.
Deposition of electrode material and piezoelectric material on substrate 100 construct piezoelectric membrane stacked structure, wherein the piezoelectricity
Thin film stack includes first electrode 300, piezoelectric layer 400 and second electrode 500, and the piezoelectric layer 400 is located at described first
Between electrode 300 and the second electrode 500, and the first electrode 300 and the second electrode 500 are oppositely arranged.
Preferably, in order to facilitate the peeling liner bottom 100 after eutectic bonding, in film of the embodiment of the present invention based on bonding
In the industrial manufacturing process of bulk acoustic wave resonator, the second thin-film material for removing can be previously deposited on substrate 100
200, deposition of electrode material and the piezoelectric material on substrate 100 construct piezoelectric membrane stacked structure, specifically include following step
It is rapid:
Deposit the second thin-film material 200 on substrate 100, second thin-film material 200 be silica, silicon nitride or
Phosphosilicate glass etc. is easy the material removed with substrate 100, as shown in Fig. 2 (b).
In the 200 surface deposition of electrode material of the second thin-film material and piezoelectric material, piezoelectric membrane stacked structure is constructed,
In order to by way of corroding second thin-film material 200, so that the substrate 100 and the piezoelectric membrane stacked structure
Separation facilitates substrate 100 described in quick separating, improves technique producing efficiency.
Preferably, being directed to piezoelectric membrane stacked structure comprising first electrode 300, piezoelectric layer 400 and second electrode
500, the industrial manufacturing process of piezoelectric membrane stacked structure is as follows:
It in the 200 surface deposition of electrode material of the second thin-film material, is patterned, constructs first electrode 300, such as scheme
Shown in 2 (c)；Wherein, the material of the first electrode 300 is one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium.
It is sequentially depositing piezoelectric material and electrode material on 300 surface of first electrode, is patterned, piezoelectric layer is constructed
400 and second electrode 500, as shown in Fig. 2 (d).Wherein, the material of the second electrode 500 be tungsten, molybdenum, platinum platinum, ruthenium, iridium,
One of titanium tungsten, aluminium, the material of the piezoelectric layer 400 are one of aluminium nitride, zinc oxide, lithium niobate, lithium tantalate.Pass through first electrode
300, the mode that piezoelectric layer 400 and second electrode 500 are sequentially depositing forms the piezoelectric membrane stacked structure, improves technique system
Standby efficiency.
Certain thickness the first film material 600 is deposited in the electrode material surface；And to the first film material 600
It is planarized, as shown in Fig. 2 (e).Wherein, the first film material 600 is silica membrane.
The first film material 600 is patterned, is formed for connecting the first electrode 300 and described second
The through-hole 610 of electrode 500, as shown in Fig. 2 (f).
In the 600 surface deposited metal material of the first film material, the through-hole 610 is filled, is formed for connecting
The metal column of first electrode 300 and the second electrode 500 is stated, and its surface is planarized, as shown in Fig. 2 (g).
The first film material 600 is removed by wet etching, as shown in Fig. 2 (h).
The metal column and substrate 800 are subjected to eutectic bonding, form cavity.Here, the device being previously formed is passed through
Metal column and substrate 800 carry out eutectic bonding, so that metal column and substrate 800 combine together.Substrate 800 is monocrystalline silicon, polycrystalline
Silicon, glass, quartz or sapphire etc., shown in resulting structures such as Fig. 2 (i).
Remove the substrate 100.
Preferably, the removing substrate 100, specifically includes the following steps:
By the second thin-film material 200 described in wet etching, so that the substrate 100 and the piezoelectric membrane stacked structure
Separation, as shown in Fig. 2 (j).Here, by corroding the second thin-film material 200 being previously deposited, facilitate lining described in quick separating
Technique producing efficiency is improved at bottom 100.
The thin film bulk acoustic wave resonator based on bonding of the embodiment of the present invention 1 uses piezoelectricity sandwich structure, layer by layer deposition
It is bonded again later, effectively prevents the release of sacrificial layer caused by traditional diamond-making technique and be not thorough and adhesion problems.Also, it adopts
With the bonding pattern of metal column, traditional diamond-making technique is compared, bigger cavity is contributed to form, to improve based on the thin of bonding
The Q value of membrane body acoustic resonator.
The removing substrate 100, specifically includes the following steps:
Corrode second thin-film material 200, so that the substrate 100 is separated with the piezoelectric membrane stacked structure.This
In, by corroding the second thin-film material 200 being previously deposited, facilitates substrate 100 described in quick separating, improve technique production effect
Rate.
Preferably, removing the substrate 100, it is further comprising the steps of: the device behind peeling liner bottom 100 is marked
Quasi- cleaning, forms the element as shown in Fig. 2 (k).
Although the technical solution of invention is described in detail in the specific embodiment of the invention, the present invention is not limited to
This, those skilled in the art of the present technique can be carry out various modifications with principle according to the present invention.Therefore, all according to principle of the invention institute
The modification of work all should be understood as falling into protection scope of the present invention.
Claims (10)
1. a kind of thin film bulk acoustic wave resonator based on bonding characterized by comprising
Substrate；
The first metal column and the second metal column over the substrate is set；And
The piezoelectric membrane stacked structure being set between first metal column and second metal column, wherein the piezoelectricity
Thin film stack includes first electrode, piezoelectric layer and second electrode, and the piezoelectric layer is located at the first electrode and described
Between two electrodes, and the first electrode and the second electrode are oppositely arranged, the first electrode also with first metal
Column electrical connection, the second electrode are also electrically connected with second metal column.
2. the thin film bulk acoustic wave resonator according to claim 1 based on bonding, which is characterized in that the second electrode
First end is located at the piezoelectric layer towards the surface of the substrate, the second end of the second electrode and second metal column electricity
Connection, and the second end of the second electrode and the surface of the first electrode are flush.
3. the thin film bulk acoustic wave resonator according to claim 1 based on bonding, which is characterized in that the first electrode
Material is one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium.
4. the thin film bulk acoustic wave resonator according to claim 1 based on bonding, which is characterized in that the material of the piezoelectric layer
Material is one of aluminium nitride, zinc oxide, lithium niobate, lithium tantalate.
5. the thin film bulk acoustic wave resonator according to claim 1 based on bonding, which is characterized in that the material of the substrate
For monocrystalline silicon, polysilicon, glass, quartz or sapphire.
6. a kind of processing method of the thin film bulk acoustic wave resonator based on bonding, which comprises the following steps:
Deposition of electrode material and piezoelectric material on substrate construct piezoelectric membrane stacked structure, wherein the piezoelectric membrane stacks
Structure includes first electrode, piezoelectric layer and second electrode, the piezoelectric layer be located at the first electrode and the second electrode it
Between, and the first electrode and the second electrode are oppositely arranged；
The first film material is deposited in the electrode material surface；
The first film material is patterned, is formed for connecting the logical of the first electrode and the second electrode
Hole；
In the first film material surface deposited metal material, the through-hole is filled, is formed for connecting the first electrode
With the metal column of the second electrode；
Remove the first film material；
The metal column and substrate are subjected to eutectic bonding；
Remove the substrate.
7. the processing method of the thin film bulk acoustic wave resonator according to claim 6 based on bonding, which is characterized in that described
Deposition of electrode material and piezoelectric material on substrate construct piezoelectric membrane stacked structure, specifically includes the following steps:
The second thin-film material is deposited on substrate；
In the second thin-film material surface deposition of electrode material and piezoelectric material, piezoelectric membrane stacked structure is constructed；
The removing substrate, specifically includes the following steps:
Corrode second thin-film material, so that the substrate is separated with the piezoelectric membrane stacked structure.
8. the processing method of the thin film bulk acoustic wave resonator according to claim 7 based on bonding, which is characterized in that described
Piezoelectric membrane stacked structure includes first electrode, piezoelectric layer and second electrode；
It is described to construct piezoelectric membrane stacked structure in the second thin-film material surface deposition of electrode material and piezoelectric material, have
Body the following steps are included:
It in the second thin-film material surface deposition of electrode material, is patterned, constructs first electrode；
It is sequentially depositing piezoelectric material and electrode material in the first electrode surface, is patterned, piezoelectric layer and second is constructed
Electrode.
9. the processing method of the thin film bulk acoustic wave resonator according to claim 6 based on bonding, which is characterized in that also wrap
It includes following steps: the device behind peeling liner bottom is cleaned.
10. the processing method of the thin film bulk acoustic wave resonator according to claim 7 based on bonding, which is characterized in that institute
Stating the second thin-film material is silica, silicon nitride or phosphosilicate glass.
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| CN201811342403.9A CN109150135B (en) | 2018-11-13 | 2018-11-13 | Film bulk acoustic resonator based on bonding and processing method thereof |
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| CN112039476A (en) * | 2020-03-17 | 2020-12-04 | 中芯集成电路（宁波）有限公司 | Film bulk acoustic resonator, manufacturing method thereof, filter and electronic equipment |
| CN112039483A (en) * | 2020-03-23 | 2020-12-04 | 中芯集成电路（宁波）有限公司 | Film bulk acoustic resonator |
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| CN112039460A (en) * | 2019-07-19 | 2020-12-04 | 中芯集成电路（宁波）有限公司 | Film bulk acoustic resonator and manufacturing method thereof |
| WO2021012893A1 (en) * | 2019-07-22 | 2021-01-28 | 中芯集成电路（宁波）有限公司 | Fingerprint identification module, manufacturing method for same, and electronic apparatus |
| WO2021042343A1 (en) * | 2019-09-05 | 2021-03-11 | 刘宇浩 | Method for forming bulk acoustic wave resonance device |
| CN112688661A (en) * | 2019-10-17 | 2021-04-20 | 芯恩（青岛）集成电路有限公司 | Body type acoustic wave resonant cavity, manufacturing process and communication device |
| WO2021077791A1 (en) * | 2019-10-23 | 2021-04-29 | 中芯集成电路（宁波）有限公司上海分公司 | Fingerprint identification module and manufacturing method therefor, and electronic device |
| CN113285685A (en) * | 2021-03-05 | 2021-08-20 | 天津大学 | Quartz film bulk acoustic resonator, processing method thereof and electronic equipment |
| CN114342255A (en) * | 2019-09-05 | 2022-04-12 | 常州承芯半导体有限公司 | Method for forming bulk acoustic wave resonance device |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1953175A (en) * | 2005-10-20 | 2007-04-25 | 松下电器产业株式会社 | Complex RF device and method for manufacturing the same |
| JP2011109481A (en) * | 2009-11-18 | 2011-06-02 | Taiyo Yuden Co Ltd | Surface acoustic wave device and method of manufacturing the same |
| CN104038177A (en) * | 2014-06-04 | 2014-09-10 | 江苏艾伦摩尔微电子科技有限公司 | Thin film bulk acoustic resonator for ultraviolet detection and preparation method thereof |
| US20150091187A1 (en) * | 2013-09-27 | 2015-04-02 | Freescale Semiconductor, Inc. | 3d device packaging using through-substrate posts |
| JP2016201780A (en) * | 2015-04-14 | 2016-12-01 | 太陽誘電株式会社 | Elastic wave device |
| CN106575957A (en) * | 2014-06-06 | 2017-04-19 | 阿库斯蒂斯有限公司 | Integrated circuit configured with crystal acoustic resonator device |
| CN107093994A (en) * | 2017-03-24 | 2017-08-25 | 杭州左蓝微电子技术有限公司 | FBAR and its processing method |
| US20180123541A1 (en) * | 2016-11-02 | 2018-05-03 | Akoustis, Inc. | Structure and method of manufacture for acoustic resonator or filter devices using improved fabrication conditions and perimeter structure modifications |
| TW201822353A (en) * | 2016-09-30 | 2018-06-16 | 美商英特爾股份有限公司 | Film bulk acoustic resonator (FBAR) devices for high frequency RF filters |
| CN208768044U (en) * | 2018-11-13 | 2019-04-19 | 杭州左蓝微电子技术有限公司 | Thin film bulk acoustic wave resonator based on bonding |
-
2018
- 2018-11-13 CN CN201811342403.9A patent/CN109150135B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1953175A (en) * | 2005-10-20 | 2007-04-25 | 松下电器产业株式会社 | Complex RF device and method for manufacturing the same |
| JP2011109481A (en) * | 2009-11-18 | 2011-06-02 | Taiyo Yuden Co Ltd | Surface acoustic wave device and method of manufacturing the same |
| US20150091187A1 (en) * | 2013-09-27 | 2015-04-02 | Freescale Semiconductor, Inc. | 3d device packaging using through-substrate posts |
| CN104038177A (en) * | 2014-06-04 | 2014-09-10 | 江苏艾伦摩尔微电子科技有限公司 | Thin film bulk acoustic resonator for ultraviolet detection and preparation method thereof |
| CN106575957A (en) * | 2014-06-06 | 2017-04-19 | 阿库斯蒂斯有限公司 | Integrated circuit configured with crystal acoustic resonator device |
| JP2016201780A (en) * | 2015-04-14 | 2016-12-01 | 太陽誘電株式会社 | Elastic wave device |
| TW201822353A (en) * | 2016-09-30 | 2018-06-16 | 美商英特爾股份有限公司 | Film bulk acoustic resonator (FBAR) devices for high frequency RF filters |
| US20180123541A1 (en) * | 2016-11-02 | 2018-05-03 | Akoustis, Inc. | Structure and method of manufacture for acoustic resonator or filter devices using improved fabrication conditions and perimeter structure modifications |
| CN107093994A (en) * | 2017-03-24 | 2017-08-25 | 杭州左蓝微电子技术有限公司 | FBAR and its processing method |
| CN208768044U (en) * | 2018-11-13 | 2019-04-19 | 杭州左蓝微电子技术有限公司 | Thin film bulk acoustic wave resonator based on bonding |
Cited By (26)
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|---|---|---|---|---|
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| CN111828289A (en) * | 2019-04-15 | 2020-10-27 | 意法半导体股份有限公司 | Micropump MEMS device for moving or ejecting a fluid |
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| JP7259005B2 (en) | 2019-07-19 | 2023-04-17 | 中芯集成電路（寧波）有限公司 | Thin-film bulk acoustic wave resonator and manufacturing method thereof |
| JP2021536160A (en) * | 2019-07-19 | 2021-12-23 | 中芯集成電路（寧波）有限公司 | Thin-film bulk acoustic wave resonator and its manufacturing method |
| CN112039460A (en) * | 2019-07-19 | 2020-12-04 | 中芯集成电路（宁波）有限公司 | Film bulk acoustic resonator and manufacturing method thereof |
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| US11917918B2 (en) | 2019-07-22 | 2024-02-27 | Ningbo Semiconductor International Corporation | Fingerprint identification module, method for forming fingerprint identification module, and electronic device |
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| CN110504938A (en) * | 2019-07-26 | 2019-11-26 | 杭州左蓝微电子技术有限公司 | Thin film bulk acoustic wave resonator, filter and preparation method thereof |
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