CN208768044U - Thin film bulk acoustic wave resonator based on bonding - Google Patents
Thin film bulk acoustic wave resonator based on bonding Download PDFInfo
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- CN208768044U CN208768044U CN201821858176.0U CN201821858176U CN208768044U CN 208768044 U CN208768044 U CN 208768044U CN 201821858176 U CN201821858176 U CN 201821858176U CN 208768044 U CN208768044 U CN 208768044U
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Abstract
The utility model proposes a kind of thin film bulk acoustic wave resonator based on bonding comprising: the first metal column and the second metal column over the substrate is arranged in substrate；And it is set to the piezoelectric membrane stacked structure between first metal column and second metal column, wherein, the piezoelectric membrane stacked structure includes first electrode, piezoelectric layer and second electrode, the piezoelectric layer is between the first electrode and the second electrode, and the first electrode and the second electrode are oppositely arranged, the first electrode is also electrically connected with first metal column, and the second electrode is also electrically connected with second metal column.Thin film bulk acoustic wave resonator of the utility model based on bonding can guarantee the clean-up performance of sacrificial layer material in cavity, improve the performance of the thin film bulk acoustic wave resonator based on bonding.
Description
Technical field
The utility model relates to a kind of piezoelectric device, especially a kind of thin film bulk acoustic wave resonator based on bonding.
Background technique
With the development of wireless communication applications, requirement of the people for data transmission bauds is higher and higher.In mobile communication
Field, the first generation communication technology are analogue techniques, and the second generation communication technology realizes digitized voice communications, and the third generation communicates skill
Art is characterized by multimedia communication, and traffic rate is increased to 1Gbps by the forth generation communication technology, time delay is reduced to 10ms, and the 5th
It is the Technology of New Generation Mobile Communications after the forth generation communication technology for the communication technology, although the technology of the 5th generation communication technology is advised
Model and standard are completely clear not yet, but compared with the third generation communication technology, the forth generation communication technology, network transmission speed and
Network capacity will be substantially improved.If be to solve from the first generation communication technology to the forth generation communication technology master person to person it
Between communication, the 5th generation communication technology will solve person to person except people and object, object and object between communication, i.e., all things on earth interconnect,
Realize the vision of " information follow one's inclinations to, all things on earth tentacle and ".
With data transfer rate rise it is corresponding be frequency spectrum resource high usage and the complication of communications protocol.Due to frequency spectrum
It is limited, in order to meet the needs of data transfer rate, it is necessary to make full use of frequency spectrum；Simultaneously in order to meet the needs of data transfer rate, from forth generation
The communication technology starts to also use carrier aggregation technology, and an equipment is allowed to utilize different carrier spectrum transmission numbers simultaneously
According to.On the other hand, in order to support enough data transmission rates, communication protocol to become to become increasingly complex in limited bandwidth, because
This also proposed stringent demand to the various performances of radio frequency system.
In RF front-end module, radio-frequency filter is played a crucial role.It can be by out-of-band interference and noise
It filters out, to meet the needs of radio frequency system and communications protocol are for signal-to-noise ratio.As communication protocol becomes increasingly complex, in frequency band
Outer requirement is also higher and higher, so that the design of filter increasingly has challenge.In addition, the frequency band number needed support with mobile phone
Mesh constantly rises, and the filter quantity for needing to use in every Mobile phone is also constantly rising.
Currently, radio-frequency filter most mainstream is achieved in that SAW filter and based on thin film bulk acoustic wave resonator
The filter of technology.SAW filter is used below proper in 1.5GHz due to its own limitation.However,
At this moment current home control network communication protocol must use already using the frequency range for being greater than 2.5GHz and be based on film bulk acoustic resonator
The filter of device technology.
The structure and preparation method of thin film bulk acoustic wave resonator have had very much.In previous structure and preparation method,
Mainly using piezoelectric membranes such as aluminium nitride, zinc oxide, PZT as piezoelectric material, and prepare the piezoelectric film material one of high quality
It is directly the emphasis and difficult point in the field.The method of tradition preparation thin film bulk acoustic wave resonator is to perform etching sky to substrate first
Then chamber is filled with sacrificial layer material again.Next then etching depositions of bottom electrode material etches it to form required bottom electricity
Pole shape, on this basis redeposited piezoelectric layer.Sacrificial layer material is finally subjected to wet etching by through-hole.And in above-mentioned work
During skill, the sacrificial layer material in surface cavities is difficult to thoroughly remove, and the adhesion of sacrificial layer residue can finally influence it is thin
The performance of membrane body acoustic resonator.
Utility model content
In order to improve the elimination efficiency of sacrificial layer material in prior art technology, guarantee the cleaning of sacrificial layer material in cavity
Degree, improves the performance of thin film bulk acoustic wave resonator, and the utility model devises the film bulk acoustic resonator based on bonding technology
Device.
Specifically, the technical solution of the utility model is as follows:
A kind of thin film bulk acoustic wave resonator based on bonding characterized by comprising
Substrate；
The first metal column and the second metal column over the substrate is set；And
The piezoelectric membrane stacked structure being set between first metal column and second metal column, wherein described
Piezoelectric membrane stacked structure includes first electrode, piezoelectric layer and second electrode, and the piezoelectric layer is located at the first electrode and institute
It states between second electrode, and the first electrode and the second electrode are oppositely arranged, the first electrode is also with described first
Metal column electrical connection, the second electrode are also electrically connected with second metal column.
Preferably, the first end of the second electrode is located at the piezoelectric layer towards the surface of the substrate, and described second
The second end of electrode is electrically connected with second metal column, and the surface of the second end of the second electrode and the first electrode
It is flush.
Preferably, the material of the first electrode is one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium.
Preferably, the material of the piezoelectric layer is one of aluminium nitride, zinc oxide, lithium niobate, lithium tantalate.
Preferably, the material of the substrate is monocrystalline silicon, polysilicon, glass, quartz or sapphire.
The processing method that the utility model also proposes a kind of thin film bulk acoustic wave resonator based on bonding, which is characterized in that
The following steps are included:
Deposition of electrode material and piezoelectric material on substrate construct piezoelectric membrane stacked structure, wherein the piezoelectric membrane
Stacked structure includes first electrode, piezoelectric layer and second electrode, and the piezoelectric layer is located at the first electrode and second electricity
Between pole, and the first electrode and the second electrode are oppositely arranged；
The first film material is deposited in the electrode material surface；
The first film material is patterned, is formed for connecting the first electrode and the second electrode
Through-hole；
In the first film material surface deposited metal material, the through-hole is filled, is formed for connecting described first
The metal column of electrode and the second electrode；
Remove the first film material；
The metal column and substrate are subjected to eutectic bonding；
Remove the substrate.
Preferably, the deposition of electrode material on substrate and piezoelectric material construct piezoelectric membrane stacked structure, specific to wrap
Include following steps:
The second thin-film material is deposited on substrate；
In the second thin-film material surface deposition of electrode material and piezoelectric material, piezoelectric membrane stacked structure is constructed；
The removing substrate, specifically includes the following steps:
Corrode second thin-film material, so that the substrate is separated with the piezoelectric membrane stacked structure.
Preferably, the piezoelectric membrane stacked structure includes first electrode, piezoelectric layer and second electrode；
It is described in the second thin-film material surface deposition of electrode material and piezoelectric material, construct piezoelectric membrane and stack knot
Structure, specifically includes the following steps:
It in the second thin-film material surface deposition of electrode material, is patterned, constructs first electrode；
Be sequentially depositing piezoelectric material and electrode material in the first electrode surface, be patterned, building piezoelectric layer and
Second electrode.
Preferably, further comprising the steps of: the device behind peeling liner bottom is cleaned.
Preferably, second thin-film material is silica, silicon nitride or phosphosilicate glass.
The advantageous effects of the utility model are: piezoelectricity sandwich structure used, is bonded again after layer by layer deposition,
The release of sacrificial layer caused by traditional diamond-making technique is effectively prevented to be not thorough and adhesion problems.Also, using the bonding of metal column
Mode compares traditional diamond-making technique, contributes to form bigger cavity, to improve the thin film bulk acoustic wave resonator based on bonding
Q value.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the thin film bulk acoustic wave resonator based on bonding of the utility model embodiment；
Fig. 2 (a) is the preparation process flow step of the thin film bulk acoustic wave resonator based on bonding of the utility model embodiment
Rapid a schematic diagram；
Fig. 2 (b) is the preparation process flow step of the thin film bulk acoustic wave resonator based on bonding of the utility model embodiment
Rapid b schematic diagram；
Fig. 2 (c) is the preparation process flow step of the thin film bulk acoustic wave resonator based on bonding of the utility model embodiment
Rapid c schematic diagram；
Fig. 2 (d) is the preparation process flow step of the thin film bulk acoustic wave resonator based on bonding of the utility model embodiment
Rapid d schematic diagram；
Fig. 2 (e) is the preparation process flow step of the thin film bulk acoustic wave resonator based on bonding of the utility model embodiment
Rapid e schematic diagram；
Fig. 2 (f) is the preparation process flow step of the thin film bulk acoustic wave resonator based on bonding of the utility model embodiment
Rapid f schematic diagram；
Fig. 2 (g) is the preparation process flow step of the thin film bulk acoustic wave resonator based on bonding of the utility model embodiment
Rapid g schematic diagram；
Fig. 2 (h) is the preparation process flow step of the thin film bulk acoustic wave resonator based on bonding of the utility model embodiment
Rapid h schematic diagram；
Fig. 2 (i) is the preparation process flow step of the thin film bulk acoustic wave resonator based on bonding of the utility model embodiment
Rapid i schematic diagram；
Fig. 2 (j) is the preparation process flow step of the thin film bulk acoustic wave resonator based on bonding of the utility model embodiment
Rapid j schematic diagram；
Fig. 2 (k) is the preparation process flow step of the thin film bulk acoustic wave resonator based on bonding of the utility model embodiment
Rapid k schematic diagram.
Description of symbols:
100-- substrate；The second thin-film material of 200--；300-- first electrode；400-- piezoelectric layer；500-- second electrode；
600-- the first film material；610-- through-hole；The first metal column of 710--；The second metal column of 720--；800--substrate.
Specific embodiment
The utility model is described further in the following with reference to the drawings and specific embodiments.
Embodiment 1
The utility model proposes a kind of novel thin film bulk acoustic wave resonator based on bonding, and specific structure is referring to Fig. 1
It is shown.Comprising: substrate 100, the first metal column 710 and the second metal column 720, Yi Jishe that are arranged on the substrate 100
The piezoelectric membrane stacked structure being placed between first metal column 710 and second metal column 720, wherein the piezoelectricity
Thin film stack includes first electrode 300, piezoelectric layer 400 and second electrode 500, and the piezoelectric layer 400 is located at described first
Between electrode 300 and the second electrode 500, and the first electrode 300 and the second electrode 500 are oppositely arranged, described
First electrode 300 is also electrically connected with first metal column 710, and the second electrode 500 is also electric with second metal column 720
Connection.
The thin film bulk acoustic wave resonator based on bonding of the utility model embodiment is being served as a contrast using piezoelectricity sandwich structure
First metal column 710 and the second metal column 720 are set on bottom 100 and effectively prevent cavity to connect piezoelectric membrane stacked structure
Adhesion problems caused by middle sacrificial layer release is not thorough, and bigger cavity is contributed to form, to improve based on bonding
The Q value of thin film bulk acoustic wave resonator.
Preferably, the first end of the second electrode 500 is located at table of the piezoelectric layer 400 towards the substrate 100
Face, the second end of the second electrode 500 is electrically connected with second metal column 720, and the second end of the second electrode 500
It is flush with the surface of the first electrode 300, in order to draw two electrodes, and component is facilitated to make.
Preferably, the first electrode 300 is one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium；The second electrode
500 material is one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium, is conducive to the electric conductivity for improving electrode.
Preferably, the material of the piezoelectric layer 400 is one of aluminium nitride, zinc oxide, lithium niobate, lithium tantalate.
Preferably, the material of the substrate 100 is monocrystalline silicon, polysilicon, glass, quartz or sapphire.
Embodiment 2
The thin film bulk acoustic wave resonator based on bonding of (a)-Fig. 2 (k) referring to fig. 2, the utility model embodiment 1 can lead to
Cross following processing step manufacture:
The silicon wafer for preparing single or double polishing, as substrate 100, and polishing faces upward, and carries out standard cleaning, such as Fig. 2
(a) shown in.
Deposition of electrode material and piezoelectric material on substrate 100 construct piezoelectric membrane stacked structure, wherein the piezoelectricity
Thin film stack includes first electrode 300, piezoelectric layer 400 and second electrode 500, and the piezoelectric layer 400 is located at described first
Between electrode 300 and the second electrode 500, and the first electrode 300 and the second electrode 500 are oppositely arranged.
Preferably, in order to facilitate the peeling liner bottom 100 after eutectic bonding, in the utility model embodiment based on bonding
In the industrial manufacturing process of thin film bulk acoustic wave resonator, the second film material for removing can be previously deposited on substrate 100
Material 200, deposition of electrode material and the piezoelectric material on substrate 100 construct piezoelectric membrane stacked structure, specifically include following
Step:
Deposit the second thin-film material 200 on substrate 100, second thin-film material 200 be silica, silicon nitride or
Phosphosilicate glass etc. is easy the material removed with substrate 100, as shown in Fig. 2 (b).
In the 200 surface deposition of electrode material of the second thin-film material and piezoelectric material, piezoelectric membrane stacked structure is constructed,
In order to by way of corroding second thin-film material 200, so that the substrate 100 and the piezoelectric membrane stacked structure
Separation facilitates substrate 100 described in quick separating, improves technique producing efficiency.
Preferably, being directed to piezoelectric membrane stacked structure comprising first electrode 300, piezoelectric layer 400 and second electrode
500, the industrial manufacturing process of piezoelectric membrane stacked structure is as follows:
It in the 200 surface deposition of electrode material of the second thin-film material, is patterned, constructs first electrode 300, such as
Shown in Fig. 2 (c)；Wherein, the material of the first electrode 300 is one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium.
It is sequentially depositing piezoelectric material and electrode material on 300 surface of first electrode, is patterned, piezoelectric layer is constructed
400 and second electrode 500, as shown in Fig. 2 (d).Wherein, the material of the second electrode 500 be tungsten, molybdenum, platinum platinum, ruthenium, iridium,
One of titanium tungsten, aluminium, the material of the piezoelectric layer 400 are one of aluminium nitride, zinc oxide, lithium niobate, lithium tantalate.Pass through first electrode
300, the mode that piezoelectric layer 400 and second electrode 500 are sequentially depositing forms the piezoelectric membrane stacked structure, improves technique system
Standby efficiency.
Certain thickness the first film material 600 is deposited in the electrode material surface；And to the first film material 600
It is planarized, as shown in Fig. 2 (e).Wherein, the first film material 600 is silica membrane.
The first film material 600 is patterned, is formed for connecting the first electrode 300 and described second
The through-hole 610 of electrode 500, as shown in Fig. 2 (f).
In the 600 surface deposited metal material of the first film material, the through-hole 610 is filled, is formed for connecting
The metal column of first electrode 300 and the second electrode 500 is stated, and its surface is planarized, as shown in Fig. 2 (g).
The first film material 600 is removed by wet etching, as shown in Fig. 2 (h).
The metal column and substrate 800 are subjected to eutectic bonding, form cavity.Here, the device being previously formed is passed through
Metal column and substrate 800 carry out eutectic bonding, so that metal column and substrate 800 combine together.Substrate 800 is monocrystalline silicon, polycrystalline
Silicon, glass, quartz or sapphire etc., shown in resulting structures such as Fig. 2 (i).
Remove the substrate 100.
Preferably, the removing substrate 100, specifically includes the following steps:
By the second thin-film material 200 described in wet etching, so that the substrate 100 and the piezoelectric membrane stacked structure
Separation, as shown in Fig. 2 (j).Here, by corroding the second thin-film material 200 being previously deposited, facilitate lining described in quick separating
Technique producing efficiency is improved at bottom 100.
The thin film bulk acoustic wave resonator based on bonding of the utility model embodiment 1 uses piezoelectricity sandwich structure, successively
It is bonded again after deposition, effectively prevents the release of sacrificial layer caused by traditional diamond-making technique and be not thorough and adhesion problems.And
And using the bonding pattern of metal column, traditional diamond-making technique is compared, bigger cavity is contributed to form, is based on key to improve
The Q value of the thin film bulk acoustic wave resonator of conjunction.
The removing substrate 100, specifically includes the following steps:
Corrode second thin-film material 200, so that the substrate 100 is separated with the piezoelectric membrane stacked structure.This
In, by corroding the second thin-film material 200 being previously deposited, facilitates substrate 100 described in quick separating, improve technique production
Efficiency.
Preferably, removing the substrate 100, it is further comprising the steps of: the device behind peeling liner bottom 100 is marked
Quasi- cleaning, forms the element as shown in Fig. 2 (k).
Although the technical solution of utility model is described in detail in specific embodiment of the present invention, this reality
With novel without being limited thereto, those skilled in the art of the present technique can be carry out various modifications with principle according to the present utility model.Therefore, all
It is modified according to made by the utility model principle, all should be understood as falling into the protection scope of the utility model.
Claims (5)
1. a kind of thin film bulk acoustic wave resonator based on bonding characterized by comprising
Substrate；
The first metal column and the second metal column over the substrate is set；And
The piezoelectric membrane stacked structure being set between first metal column and second metal column, wherein the piezoelectricity
Thin film stack includes first electrode, piezoelectric layer and second electrode, and the piezoelectric layer is located at the first electrode and described
Between two electrodes, and the first electrode and the second electrode are oppositely arranged, the first electrode also with first metal
Column electrical connection, the second electrode are also electrically connected with second metal column.
2. the thin film bulk acoustic wave resonator according to claim 1 based on bonding, which is characterized in that the second electrode
First end is located at the piezoelectric layer towards the surface of the substrate, the second end of the second electrode and second metal column electricity
Connection, and the second end of the second electrode and the surface of the first electrode are flush.
3. the thin film bulk acoustic wave resonator according to claim 1 based on bonding, which is characterized in that the first electrode
Material is one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium.
4. the thin film bulk acoustic wave resonator according to claim 1 based on bonding, which is characterized in that the material of the piezoelectric layer
Material is one of aluminium nitride, zinc oxide, lithium niobate, lithium tantalate.
5. the thin film bulk acoustic wave resonator according to claim 1 based on bonding, which is characterized in that the material of the substrate
For monocrystalline silicon, polysilicon, glass, quartz or sapphire.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109150135A (en) * | 2018-11-13 | 2019-01-04 | 杭州左蓝微电子技术有限公司 | Thin film bulk acoustic wave resonator and its processing method based on bonding |
| WO2021258442A1 (en) * | 2020-06-22 | 2021-12-30 | 深圳市信维通信股份有限公司 | Bulk acoustic wave resonance apparatus, filter apparatus, and radio frequency front end apparatus |
| WO2022057766A1 (en) * | 2020-09-21 | 2022-03-24 | 中芯集成电路（宁波）有限公司上海分公司 | Method for manufacturing film bulk acoustic resonator, and filter |
-
2018
- 2018-11-13 CN CN201821858176.0U patent/CN208768044U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109150135A (en) * | 2018-11-13 | 2019-01-04 | 杭州左蓝微电子技术有限公司 | Thin film bulk acoustic wave resonator and its processing method based on bonding |
| WO2021258442A1 (en) * | 2020-06-22 | 2021-12-30 | 深圳市信维通信股份有限公司 | Bulk acoustic wave resonance apparatus, filter apparatus, and radio frequency front end apparatus |
| WO2022057766A1 (en) * | 2020-09-21 | 2022-03-24 | 中芯集成电路（宁波）有限公司上海分公司 | Method for manufacturing film bulk acoustic resonator, and filter |
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