CN105680813B - A kind of thin film bulk acoustic wave resonator and its manufacturing method - Google Patents
A kind of thin film bulk acoustic wave resonator and its manufacturing method Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000010409 thin film Substances 0.000 title claims abstract description 21
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- 238000000034 method Methods 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000001301 oxygen Substances 0.000 claims abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 15
- 239000010949 copper Substances 0.000 claims abstract description 13
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000004411 aluminium Substances 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000011049 filling Methods 0.000 claims abstract description 3
- 238000005530 etching Methods 0.000 claims description 26
- 238000000926 separation method Methods 0.000 claims description 24
- 238000002161 passivation Methods 0.000 claims description 12
- 239000010408 film Substances 0.000 claims description 9
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- 239000004642 Polyimide Substances 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 241001465754 Metazoa Species 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 148
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000001459 lithography Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 239000010931 gold Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000010897 surface acoustic wave method Methods 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000002305 electric material Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 238000010295 mobile communication Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910000632 Alusil Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
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- 230000005611 electricity Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003447 ipsilateral effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
Abstract
This application discloses a kind of thin film bulk acoustic wave resonator (FBAR), it is that there is cavity in the top of substrate, also there is lower electrode, top electrode and the piezoelectric layer among the two in the top of cavity.The cavity is obtained from first filling sacrificial layer removes sacrificial layer again, and sacrificial layer is using the material that can be removed by oxygen plasma etch technique；The lower electrode, top electrode and/or electrode leads to client are one or more using aluminium, copper or albronze.Disclosed herein as well is the manufacturing methods of FBAR, form electrode leads to client as interconnection metal using aluminium, copper or albronze, and use oxygen plasma etch (O2Plasma) technique removal sacrificial layer and form the air-gap of FBAR.The application reduces manufacturing cost, improves the reliability of thin film bulk acoustic wave resonator, embodies environment friendly.
Description
Technical field
This application involves a kind of thin film bulk acoustic wave resonator (FBAR or TFBAR, Thin-film bulk acoustic
Resonator), more particularly to a kind of air-gap type FBAR.
Background technique
Currently used for mobile communication the main surface acoustic wave of filter (SAW, surface acoustic wave, also referred to as
Surface acoustic wave) filter and bulk acoustic wave (BAW, bulk acoustic wave) filter.SAW filter is mainly in 4 English
Very little and 6 inches of lithium niobate (LiNiO3) or lithium tantalate (LiTaO3) produce on wafer, bulk accoustic wave filter is mainly at 6 inches and 8
It is produced on the Silicon Wafer of inch.Usually wafer size is bigger, and producible integrated circuit is more on same wafer, and cost is just
It is lower.The material cost of SAW filter and bulk accoustic wave filter is essentially identical, but the whole manufacture of bulk accoustic wave filter
Cost is significantly larger than SAW filter, this is because the structure of bulk accoustic wave filter and manufacturing process are complicated.Sound surface
Wave filter occupies 60% or more filter market since at low cost, manufacturing process is mature.
With the development of 4G mobile communication technology, wireless communication frequency is higher and higher, and usable spectrum is more and more crowded, to filter
The rolloff-factor of wave device, insertion loss, Out-of-band rejection, power bearing ability etc. have higher requirement.Surface acoustic wave filter
Wave device gradually shows to be unable to satisfy these requirements.And bulk accoustic wave filter is excellent in these areas, has been increasingly becoming 4G
The first choice of mobile communication field.But the sky high cost of bulk accoustic wave filter hinders its fast development.
FBAR be a kind of bulk acoustic wave device and a kind of MEMS (micro-electro-mechanical systems, it is micro-
Mechatronic Systems) device is the basic unit for constituting bulk accoustic wave filter.One group of FBAR uses such as half trapezoidal (half-
Ladder), the modes such as complete trapezoidal (full-ladder), lattice (lattice), stacking (stack), which are concatenated together, just constitutes body
Acoustic wave filter.FBAR is also used to make duplexer, microwave oscillator, sensor, power amplifier, low-noise amplifier etc..
How the FBAR of high-performance, low cost is produced to the further development important in inhibiting of bulk accoustic wave filter.
There are mainly three types of structure --- back-etching type, solid-state assembly type and skies according to different manufacturing process by FBAR at present
Air gap type.Back-etching type FBAR makes yield rate low due to bad mechanical strength, can not scale of mass production.Solid assembly type
FBAR, as sound wave reflecting layer, on the one hand needs to prepare plural layers, in each layer film Stress Control using Bragg reflecting layer
Upper difficulty is larger and high process cost；The sound wave reflecting effect of another aspect Bragg reflecting layer is not so good as air, Q value (quality
The factor) it is lower than air-gap type FBAR.The mechanical strength of air-gap type FBAR preferably, Q value it is higher, manufacturing process moderate complexity and
It is widely used.University of Electronic Science and Technology's master thesis " film bulk acoustic resonator structure analysis and emulation " (work in 2007
Person: Wu Yong) this respect content is described in chapter 2 " principle and structure of FBAR ".
Referring to Fig. 1, this is a kind of traditional air-gap type FBAR.It is respectively provided with upwards in turn in the top of substrate 100
Lower electrode 201, piezoelectric layer 202 and top electrode 203.The substrate 100 can be silicon, sapphire, GaAs, gallium nitride, carbonization
The materials such as silicon, quartz, glass.The lower electrode 201 and top electrode 203 can be aluminium, copper, aluminium copper, alusil alloy, aluminium silicon
The metal materials such as copper alloy, gold, tungsten, titanium, titanium tungsten compound, molybdenum, platinum.The piezoelectric layer 202 can be zinc oxide, PZT (Lead
Zirconate titanate, lead zirconate titanate), the piezoelectric film materials such as aluminium nitride.Have between substrate 100 and lower electrode 201
There is air-gap of the cavity 104 as FBAR from the upper surface of substrate 100 to lower recess.
Referring to Fig. 2, the manufacturing method of traditional air-gap type FBAR shown in FIG. 1 includes the following steps:
Step S101 etches cavity 104 in the upper surface of substrate 100, for example, by using lithography and etching technique.In cavity
104 edge also has the sacrificial layer release channel being etched out together.
Step S102 deposits one layer of sacrificial layer on substrate 100, at least fills the cavity 104 full.The sacrificial layer
For example, silica, phosphorosilicate glass (PSG), boron-phosphorosilicate glass (BPSG) etc..
Sacrificial layer is ground to using flatening process and is flushed with the upper surface of substrate 100 by step S103.The planarization
Technique is, for example, chemical mechanical grinding (CMP).
Step S104 first grows one layer of metal, then by this layer of metal etch at lower electricity on substrate 100 and sacrificial layer
Pole 201, for example, by using sputtering, lithography and etching technique.Lower electrode 201 substantially covers the position of cavity 104.
Step S105 first deposits a layer of piezo-electric material on substrate 100, sacrificial layer and lower electrode 201, then by the layer
Piezoelectric material is etched into piezoelectric layer 202.Piezoelectric layer 202 also substantially covers the position of cavity 104.
Step S106 first grows one layer of metal, then on substrate 100, sacrificial layer, lower electrode 201 and piezoelectric layer 202
By this layer of metal etch at top electrode 203, for example, by using deposit, lithography and etching technique.Top electrode 203 also substantially covers cavity
104 position.
Step S107, etching top electrode 203, piezoelectric layer 202, in lower electrode 201 one or more layers is sacrificial to expose
The position of domestic animal layer release channel, then removes the sacrificial layer in cavity 104 by the sacrificial layer release channel, for example, by using light
It carves, etching, wet corrosion technique.Cavity 104 between substrate 100 and lower electrode 201 is with regard to the air-gap as FBAR.
Traditional air-gap type FBAR during fabrication, is all made of silica or similar material as sacrificial layer for filling
Cavity removes the silica in cavity to form air-gap with hydrofluoric acid (HF) again after the completion of element manufacturing.Due to hydrogen fluorine
Acid has corrosivity, therefore the gold that traditional air-gap type FBAR must select electrode and interlayer to interconnect with caution to most metals
Belong to material.Generally, air-gap type FBAR cannot be used as interconnection metal using aluminium (Al), the copper (Cu) of low cost, be all made of height
The gold (Au) of cost is as interconnection metal, and this considerably increases its material costs.Also, the same of sacrificial layer is removed using hydrofluoric acid
When, the other structures of FBAR device also will receive the different degrees of corrosion of hydrofluoric acid, lead to the less reliable of device.
Summary of the invention
The technical problem to be solved by the application is to provide a kind of low cost, high reliability, free of contamination FBAR and phases
The manufacturing method answered.
In order to solve the above technical problems, the thin film bulk acoustic wave resonator of the application is that have cavity in the top of substrate,
The top of cavity also has lower electrode, top electrode and the piezoelectric layer among the two；The cavity is first to fill sacrificial layer
Obtained from removing sacrificial layer again, and sacrificial layer is using the material that can be removed by oxygen plasma etch technique；Under described
Electrode, top electrode and/or electrode leads to client are one or more using aluminium, copper or albronze.
The manufacturing method of the thin film bulk acoustic wave resonator of the application first is that: be formed on the substrate protrusion in substrate
Sacrificial layer, or supporting layer and sacrificial layer that upper surface flushes is formed on the substrate；Then on substrate and sacrificial layer or
Lower electrode, piezoelectric layer, top electrode are respectively formed on substrate and supporting layer and sacrificial layer；Finally closed using aluminium, copper or copper aluminium
Gold forms electrode leads to client as interconnection metal, and forms thin-film body sound using oxygen plasma etch technique removal sacrificial layer
The air-gap of wave resonator.
On the one hand what the application obtained has the technical effect that electrode, the electrode leads to client material in thin film bulk acoustic wave resonator
Material is changed to cheap metal by noble metal, reduces manufacturing cost；On the other hand damage of the hydrofluoric acid to device is avoided, improved
The reliability of thin film bulk acoustic wave resonator；Another further aspect has given up the hydrofluoric acid medical fluid for having pollution to environment, embodies environmental-friendly
Property.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of traditional air-gap type FBAR.
Fig. 2 is the manufacturing method schematic diagram of traditional air-gap type FBAR.
Fig. 3 a to Fig. 3 i is each step schematic diagram of air-gap type FBAR manufacturing method embodiment one of the application.
Fig. 4 a to Fig. 4 d is the two part steps schematic diagram of air-gap type FBAR manufacturing method embodiment of the application.
Fig. 5 a to Fig. 5 b is the air-gap type FBAR manufacturing method embodiment three parts step schematic diagram of the application.
The structural schematic diagram of the embodiment one of Fig. 3 i or the air-gap type FBAR of the application.
Fig. 5 c is the structural schematic diagram of the embodiment two of the air-gap type FBAR of the application.
Description of symbols in figure: 100 be substrate；101 be supporting layer；102 be silicon (monocrystalline silicon or polysilicon)；104 are
Cavity；105 be sacrificial layer；201 be lower electrode；202 be piezoelectric layer；203 be top electrode；207 be groove；208 be separation layer；
209 be passivation layer；300 be interconnection metal.
Specific embodiment
The embodiment one of the FBAR manufacturing method of the application includes the following steps:
Step S301 please refers to Fig. 3 a, and one layer of supporting layer 101 is deposited on substrate 100.Supporting layer 101 can be dioxy
The insulating materials such as SiClx, silicon nitride, silicon oxynitride.
Step S302 please refers to Fig. 3 b, and etching supporting layer 101 forms cavity 104, for example, by using lithography and etching technique.
Cavity 104 is also connected with the sacrificial layer release channel (not shown) being etched out together.
Step S303 please refers to Fig. 3 c, and one layer of sacrificial layer 105 is deposited on substrate 100 and supporting layer 101, described sacrificial
Domestic animal layer 105 fills cavity 104 and sacrificial layer release channel full.Sacrificial layer 105 is for example, by using carbonado (Black
Diamond), photoresist (Photoresist), polyimides (Polyimide) etc. can be by oxygen plasma etch (O2
Plasma) the inorganic or organic material of technique removal.
Step S304 please refers to Fig. 3 d, is ground to the upper surface of sacrificial layer 105 and supporting layer using flatening process
101 upper surface flushes.The flatening process is, for example, chemical mechanical grinding.
Step S305 please refers to Fig. 3 e, one layer of separation layer 208 is first deposited on supporting layer 101 and sacrificial layer 105, every
Absciss layer 208 is, for example, the materials such as silica, silicon nitride, silicon oxynitride, aluminium nitride.Then one layer is grown on separation layer 208
Metal, and by this layer of metal etch at lower electrode 201, for example, by using sputtering, lithography and etching technique.Lower electrode 201 and isolation
Layer 208 completely covers the position of cavity 104, but exposes the position of sacrificial layer release channel.
It is alternatively possible to etch lower electrode 201 and separation layer 208 simultaneously.
Optionally, it when etching lower electrode 201 and separation layer 208 at the same time, is also carved in lower electrode 201 and separation layer 208
Groove 207 out are lost, for example, by using lithography and etching technique.The bottom of groove 207 is, for example, the upper surface of supporting layer 101, groove
207 are staggeredly located out with cavity 104.Groove 207 is used to for FBAR being isolated with interconnection hard contact.It is shown in Fig. 3 e
Groove 207, in other embodiments etching groove 207 is not also possible.
Step S306 please refers to Fig. 3 f, first deposits a layer of piezo-electric material on separation layer 208 and lower electrode 201, then
The layer of piezo-electric material is etched into piezoelectric layer 202.Piezoelectric layer 202 fully or partially covers the position of cavity 104, but exposes
The exit of sacrificial layer release channel and lower electrode 201.
If etching the groove 207 for isolation in step S305, a part of of piezoelectric layer 202 can be filled
In the groove 207.
Step S307 please refers to Fig. 3 g, one layer of gold is first grown on separation layer 208, lower electrode 201 and piezoelectric layer 202
Belong to, then in separation layer 208, lower electrode 201, piezoelectric layer 202, newly deposit one layer of passivation layer 209 on the metal layer that grows.It is blunt
Changing layer 209 is, for example, the materials such as silica, silicon nitride, silicon oxynitride, aluminium nitride.Then first Etch Passivation 209, then etch new
The metal layer of growth becomes top electrode 203, for example, by using lithography and etching technique.Top electrode 203 partly or entirely covers cavity
104 position, but expose the position of sacrificial layer release channel.Passivation layer 209 covers the sudden and violent of top electrode 203 and lower electrode 201
Reveal part, but exposes the exit of electrode.
If etching the groove 207 for isolation, a part of top electrode 203, passivation layer in step S305
209 a part of can be filled in the groove 207.
Step S308 please refers to Fig. 3 h, forms interconnection gold in the exit of lower electrode 201 and the exit of top electrode 203
Belong to 300.Such as grow one layer of metal first to form interconnection metal 300 in the position of electrode leads to client, then remove other positions
Metal.Lower electrode 201, top electrode 203, interconnection metal 300 use the metal material of the low cost such as aluminium, copper, albronze, with
And the interconnection technology manufacture of respective metal.Preferably, interconnection metal 300 and cavity 104 minimum spacing should be maintained at 3 μm with
On.
If etching the groove 207 for isolation in step S305, the exit of top electrode 203 is formed by
Interconnection a part of of metal 300 can be filled in the groove 207.In Fig. 3 h, groove 207 is used to FBAR device and powers on
The exit of pole 203, which is formed by interconnection metal 300, is isolated, which can also omit.Similarly, in FBAR device
And the exit of lower electrode 201 is formed by between interconnection metal 300 and can also form groove and be isolated.
Step S309 please refers to Fig. 3 i, is removed by sacrificial layer release channel position using oxygen plasma etch technique
Sacrificial layer 105 in cavity 104, cavity 104 just form the air-gap of FBAR.Preferably, the reaction of oxygen plasma etch
Temperature is between 200 DEG C to 650 DEG C.If sacrificial layer release channel is covered by any film, which removes sacrifice together
Layer release channel above film and expose sacrificial layer release channel.
The air-gap type FBAR structure that the embodiment one produces is as shown in figure 3i.
The embodiment two of the FBAR manufacturing method of the application includes the following steps:
Step S401 please refers to Fig. 4 a, and one layer of sacrificial layer 105 is deposited on substrate 100.Sacrificial layer 105 is for example, by using black
The inorganic or organic material that diamond, photoresist, polyimides etc. can be removed with oxygen plasma etch technique.
Step S402, please refers to Fig. 4 b, etching sacrificial layer 105, and remaining sacrificial layer 105 includes preparing to be used as cavity 104
Part and the part as sacrificial layer release channel that is connected with cavity 104, for example, by using lithography and etching technique.
Step S403 please refers to Fig. 4 c, and one layer of silicon 102 is deposited on substrate 100 and sacrificial layer 105.Such as served as a contrast using silicon
Bottom is then monocrystalline silicon 102 on substrate 100.It is polysilicon 102 on sacrificial layer 105.
Step S404 please refers to Fig. 4 d, and the upper surface of silicon layer 102 is ground or is etched to and sacrificed using flatening process
The upper surface of layer 105 flushes.The flatening process is, for example, chemical mechanical grinding.The flatening process can also be selection
Property etching, can be wet etching or dry etching, it is desirable that be greater than to the etch rate of polysilicon fast to the etching of monocrystalline silicon
Rate.
The subsequent step S305 to step S309 using embodiment one.The air-gap type FBAR knot that the embodiment two produces
Structure is also as shown in figure 3i.
The embodiment three of the FBAR manufacturing method of the application includes the following steps:
Step S501 please refers to Fig. 5 a, and one layer of sacrificial layer 105 is deposited on substrate 100.Sacrificial layer 105 is for example, by using black
The inorganic or organic material that diamond, photoresist, polyimides etc. can be removed with oxygen plasma etch technique.
Step S502, please refers to Fig. 5 b, etching sacrificial layer 105, and remaining sacrificial layer 105 includes preparing to be used as cavity 104
Part and the part as sacrificial layer release channel that is connected with cavity 104, for example, by using lithography and etching technique.
The subsequent step S305 to step S309 using embodiment one.The air-gap type FBAR knot that the embodiment three produces
Structure is as shown in Figure 5 c.
Compared with traditional FBAR manufacturing method, three embodiments of FBAR manufacturing method provided by the present application have following
Advantage:
First, selecting to have manufactured by material that oxygen plasma etch technique removes as sacrificial layer material in FBAR
Sacrificial layer is removed using oxygen plasma etch technique at rear.Oxygen plasma etch technique is corrosion-free to common metal, therefore
The metal material that can be interconnected using the inexpensive metal such as aluminium, copper as the lower electrode of FBAR, top electrode and/or interlayer, significantly
Reduce material cost.
Second, avoiding the step of using hydrofluoric acid medical fluid to remove earth silicon material with wet corrosion technique, therefore keep away
Exempt from hydrofluoric acid and potential damage is brought to the other structures of FBAR, improves the reliability of device to a certain extent.
Third, hydrofluoric acid is the chemicals that a kind of pair of environment has pollution, avoid also helping environment guarantor using hydrofluoric acid
Shield.
It please refers to shown in Fig. 3 i, this is the embodiment one of the FBAR of the application.Distinguish upwards in turn in the top of substrate 100
With supporting layer 101, separation layer 208, lower electrode 201, piezoelectric layer 202, top electrode 203 and passivation layer 209.In supporting layer 101
Centre has cavity 104, and the bottom of cavity 104 is, for example, the upper surface of substrate 100, and the top of cavity 104 is, for example, separation layer
208 lower surface.Separation layer 208 increases being isolated between FBAR and substrate 100, can reduce the resistivity to substrate 100
It is required that and prevent having electric leakage between the electrode of FBAR, to provide better basis for IC is integrated.208 conduct of separation layer
Transition between FBAR and substrate 100, can also improve the consistency of device architecture growth, to improve device performance and reliable
Property.Optionally, separation layer 208 can also omit.Separation layer 208 and lower electrode 201 be all completely be covered on cavity 104 just on
Side.Piezoelectric layer 202 and top electrode 203 are all partly or entirely to be covered on the surface of cavity 104.In lower electrode 201 and upper
The exit of electrode 203 is formed with interconnection metal 300 using the metal material of the low cost such as aluminium, copper, albronze.Passivation layer
209 completely cover the expose portion of lower electrode 201 and top electrode 203 in addition to the region that interconnection metal 300 covers, and avoid
The expose portion of top electrode 203 and lower electrode 201 it is exposed in air caused by oxidation, it is rotten phenomena such as, be conducive to keep
The performance long time stability of FBAR.This can be applied to device in more rugged environment, reduce to use environment
Requirement.Optionally, passivation layer 209 can also omit.
Fig. 5 c is please referred to, this is the embodiment two of the FBAR of the application.It is respectively provided with upwards in turn in the top of substrate 100
Separation layer 208, lower electrode 201, piezoelectric layer 202, top electrode 203 and passivation layer 209.A part of separation layer 208 raises upward,
Separation layer 208, which raises upward, has cavity 104 between part and substrate 100, the bottom of cavity 104 is, for example, the upper of substrate 100
Surface, the top of cavity 104 are, for example, the lower surface of separation layer 208.The other structures of the embodiment two are similar with embodiment one.
The main distinction of two embodiments of above-mentioned FBAR is on substrate 100 whether there is supporting layer 101.Work as substrate
On 100 have supporting layer 101 when, supporting layer 101 can be flushed with the upper surface of sacrificial layer 105, thus for lower electrode 201,
Piezoelectric layer 202 and top electrode 203 provide a flat surface and carry out growth deposit, and the technique that this can reduce film growth is difficult
Degree is conducive to the quality and uniformity that improve film.
Optionally, in two embodiments of above-mentioned FBAR, interconnection metal 300 is formed by the exit of lower electrode 201
Groove can be set between cavity 104, be used to carry out electric isolation to FBAR and lower electrode metal contact 300.In top electrode
203 exit, which is formed by between interconnection metal 300 and cavity 104, also can be set groove, be used to FBAR and top electrode
Hard contact 300 carries out electric isolation.Fig. 3 i and Fig. 5 c only shows a groove 207 as example.When there are isolating trenches
When slot, a part of lower electrode 201, a part of piezoelectric layer 202, a part of top electrode 203, a part of passivation layer 209,
A part of ipsilateral interconnection metal 300 can all be fallen in the isolated groove.
Compared with traditional FBAR, air-gap type FBAR provided by the present application in structure have separation layer, passivation layer, every
From the film that device reliability can be improved in groove etc., inexpensive, corrosion-free, environmentally friendly technology is used in manufacture, it is real
The double goal of low cost with high reliability is showed.
The above is only preferred embodiment of the present application, it is not used to limit the application.Come for those skilled in the art
It says, various changes and changes are possible in this application.Within the spirit and principles of this application, made any modification, equivalent
Replacement, improvement etc., should be included within the scope of protection of this application.
Claims (10)
- That there is cavity in the top of substrate 1. a kind of thin film bulk acoustic wave resonator, the top of cavity also have lower electrode, on Electrode and the piezoelectric layer among the two；It is characterized in that: the cavity is that first filling sacrificial layer removes sacrificial layer again and obtains It arrives, and sacrificial layer is using the material that can be removed by oxygen plasma etch technique；The lower electrode, top electrode and/or Electrode leads to client is one or more using aluminium, copper or albronze.
- 2. thin film bulk acoustic wave resonator according to claim 1, characterized in that the sacrificial layer uses carbonado, light One or more materials of photoresist, polyimides.
- 3. thin film bulk acoustic wave resonator according to claim 1, characterized in that have in substrate and under lower electrode There is separation layer, the cavity is between substrate and separation layer；Alternatively, substrate and under lower electrode have supporting layer and separation layer, the cavity be located in supporting layer and Between substrate and separation layer.
- 4. thin film bulk acoustic wave resonator according to claim 1, characterized in that there is passivation layer on top electrode, cover Cover all expose portions of top electrode and lower electrode.
- 5. a kind of manufacturing method of thin film bulk acoustic wave resonator, characterized in that protrusion is formed on the substrate in the sacrificial of substrate Domestic animal layer, or supporting layer and sacrificial layer that upper surface flushes is formed on the substrate；Then on substrate and sacrificial layer or Lower electrode, piezoelectric layer, top electrode are respectively formed on substrate and supporting layer and sacrificial layer；Finally use aluminium, copper or albronze Electrode leads to client is formed as interconnection metal, and film bulk acoustic is formed using oxygen plasma etch technique removal sacrificial layer The air-gap of resonator.
- 6. the manufacturing method of thin film bulk acoustic wave resonator according to claim 5, characterized in that described to be formed on the substrate The sacrificial layer protruded in substrate includes the following steps: to deposit one layer of sacrificial layer on substrate；Etching sacrificial layer, it is remaining sacrificial Domestic animal layer includes the part prepared as cavity.
- 7. the manufacturing method of thin film bulk acoustic wave resonator according to claim 5, characterized in that described to be formed on the substrate The supporting layer and sacrificial layer that upper surface flushes include the following steps: to deposit one layer of supporting layer on substrate；Etching supporting layer is formed Cavity；One layer of sacrificial layer is deposited on substrate and supporting layer, the sacrificial layer fills cavity full；It will using flatening process The upper surface of sacrificial layer is ground to be flushed with the upper surface of supporting layer.
- 8. the manufacturing method of thin film bulk acoustic wave resonator according to claim 5, characterized in that described to be formed on the substrate The supporting layer and sacrificial layer that upper surface flushes include the following steps: to deposit one layer of sacrificial layer on substrate；Etching sacrificial layer, it is remaining Sacrificial layer include preparing part as cavity；One layer of supporting layer is deposited on substrate and sacrificial layer；Using flat chemical industry The upper surface of supporting layer is ground or is etched to and flushed with the upper surface of sacrificial layer by skill.
- 9. the manufacturing method of thin film bulk acoustic wave resonator according to claim 8, characterized in that the flatening process is Chemical mechanical grinding or selective etch, selective etch are greater than the etch rate to monocrystalline silicon to the etch rate of polysilicon.
- 10. the manufacturing method of thin film bulk acoustic wave resonator according to claim 5, characterized in that oxygen plasma etch The reaction temperature of technique is between 200 DEG C to 650 DEG C.
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