CN109217841A - One kind combining resonator based on surface acoustic wave and cavity type film bulk acoustic - Google Patents

One kind combining resonator based on surface acoustic wave and cavity type film bulk acoustic Download PDF

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CN109217841A
CN109217841A CN201811426033.7A CN201811426033A CN109217841A CN 109217841 A CN109217841 A CN 109217841A CN 201811426033 A CN201811426033 A CN 201811426033A CN 109217841 A CN109217841 A CN 109217841A
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piezoelectric
cavity
acoustic wave
metal
layer
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CN109217841B (en
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不公告发明人
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Zuolanwei Jiangsu Electronic Technology Co ltd
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Hangzhou Left Blue Microelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

One kind combining resonator based on surface acoustic wave and cavity type film bulk acoustic, and the combination resonator includes that the piezoelectric material substrate, the metal that stack gradually be interdigital, temperature compensating layer, piezoelectric unit；Wherein the metallic tines, which refer to, is formed in above the piezoelectric material substrate, it is interdigital that the temperature compensating layer covers the metal, the temperature compensating layer upper surface is provided with cavity and the cavity upper surface is covered by piezoelectric unit completely, the piezoelectric unit is formed in above the temperature compensating layer, the piezoelectric unit includes that first electrode, piezoelectric layer, second electrode are formed by stack architecture, wherein the first electrode is arranged above the cavity and the cavity is completely covered.What is proposed in the present invention combines resonator based on surface acoustic wave and cavity type film bulk acoustic, and SAW resonator is combined with cavity type thin film bulk acoustic wave resonator, and combination resonator is enabled effectively to play the performance advantage of two kinds of resonators.

Description

One kind combining resonator based on surface acoustic wave and cavity type film bulk acoustic
Technical field
The present invention relates to a kind of combination resonators, use temperature compensating type surface acoustic wave and cavity type more particularly to a kind of The combination resonator and its processing method of film bulk acoustic.
Background technique
With the development of wireless communication applications, requirement of the people for data transmission bauds is higher and higher.In mobile communication Field, the first generation are analogue techniques, and the second generation realizes digitized voice communications, and the third generation (3G) is spy with multimedia communication Sign, traffic rate is increased to 1Gbps by forth generation (4G), time delay is reduced to 10ms, and the 5th generation (5G) was a new generation after 4G Mobile communication technology, although the technical specification of 5G is completely clear not yet with standard, compared with 3G, 4G, network transmission speed Rate and network capacity will be substantially improved.If master is to solve interpersonal communication from 1G to 4G, 5G will solve people With people and object except people, the communication between object and object, i.e. all things on earth interconnects, and realizes the hope of " information follow one's inclinations to, all things on earth tentacle and " Scape.
With data transfer rate rise it is corresponding be frequency spectrum resource high usage and the complication of communications protocol.Due to frequency spectrum It is limited, in order to meet the needs of data transfer rate, it is necessary to make full use of frequency spectrum；Simultaneously in order to meet the needs of data transfer rate, since 4G Carrier aggregation technology is also used, an equipment is allowed to utilize different carrier spectrum transmission data simultaneously.On the other hand, In order to support enough data transmission rates, communication protocol to become to become increasingly complex in limited bandwidth, therefore to radio frequency system Various performances also proposed stringent demand.
In RF front-end module, radio-frequency filter is played a crucial role.It can be by out-of-band interference and noise It filters out to meet the needs of radio frequency system and communications protocol are for signal-to-noise ratio.As communication protocol becomes increasingly complex, in frequency band Outer requirement is also higher and higher, so that the design of filter increasingly has challenge.In addition, the frequency band number needed support with mobile phone Mesh constantly rises, and the filter quantity for needing to use in every Mobile phone is also constantly rising.
Radio-frequency filter most mainstream is achieved in that SAW filter and based on thin film bulk acoustic wave resonator at present The filter of technology.Thin film bulk acoustic wave resonator is mainly used for high frequency (such as the frequency range for being greater than 2.5GHz), and manufacturing process compares Complexity, higher cost.And SAW filter is mainly used for middle low frequency (the such as less than frequency range of 2.5GHz), manufacturing process phase To fairly simple, cost wants much lower compared to thin film bulk acoustic wave resonator, is easier to be received by market.
The structure and preparation method of temperature-compensating SAW resonator and thin film bulk acoustic wave resonator have had very much.With Past structure and preparation method all comparative maturities.For temperature-compensating SAW resonator, traditional method is interdigital (IDT) silica membrane of surface deposition layer of silicon dioxide (SiO2), amorphous has negative temperature coefficient, can just support Disappear the positive temperature coefficient of piezoelectric substrate.The method that tradition prepares cavity type thin film bulk acoustic wave resonator is to carry out sky to substrate first Then chamber is filled with sacrificial layer material again.Following depositions of bottom electrode material, then etches it to form required hearth electrode shape Shape, redeposited piezoelectric layer also top electrode material and performs etching on this basis.Finally sacrificial layer material is carried out by through-hole Wet etching.How temperature-compensating SAW resonator and thin film bulk acoustic wave resonator to be combined, to give full play to Larger range of frequency adjustment effect, there is presently no corresponding researchs.
Summary of the invention
The purpose of the present invention is in view of the drawbacks of the prior art, propose a kind of novel sound of the use based on temperature-compensating Surface wave and cavity type film bulk acoustic combined resonator and preparation method thereof.The compensatory surface acoustic wave of preparation temperature first is humorous Shake device, and cavity type thin film bulk acoustic wave resonator is then formed in temperature compensating layer.Specifically, the solution of the present invention is as follows:
One kind combining resonator based on surface acoustic wave and cavity type film bulk acoustic, which is characterized in that the combination resonance Device includes that the piezoelectric material substrate, the metal that stack gradually be interdigital, temperature compensating layer, piezoelectric unit；The wherein metallic tines finger-type At above the piezoelectric material substrate, the temperature compensating layer covering metal is interdigital, the temperature compensating layer upper surface It is provided with cavity and the cavity upper surface is covered by piezoelectric unit completely, the piezoelectric unit is formed in the temperature compensating layer Top, the piezoelectric unit includes that first electrode, piezoelectric layer, second electrode are formed by stack architecture, wherein first electricity Pole is arranged above the cavity and the cavity is completely covered.
Further, the material of the piezoelectric material substrate includes lithium niobate, lithium tantalate, aluminium nitride, zinc oxide or its group It closes.
Further, the interdigital material of the metal includes that aluminium, titanium, copper, chromium, silver or combinations thereof and/or the temperature are mended The material for repaying layer includes silica.
Further, the material of the piezoelectric layer include aluminium nitride (AlN), zinc oxide (ZnO), lithium niobate (LiNbO3), Lithium tantalate (LiTaO3) or combinations thereof
Further, the second electrode includes metallic region, transitional region and dielectric regions, metallic region and piezoelectricity Layer, first electrode constitute the first piezoelectric regions, and transitional region and piezoelectric layer, first electrode constitute the second piezoelectric regions, dielectric regions with Piezoelectric layer, second electrode composition third piezoelectric regions, metallic region and the of poor quality of transitional region, transitional region and dielectric regions Ropy and value is selected as being suitable for reducing energy loss caused by the acoustic irradiation issued from combination resonator.
Further, the quality difference of the metallic region and transitional region is 2% to 3%, transitional region and dielectric regime The of poor quality of domain is 1% to 15%.
A kind of preparation method combining resonator, which comprises the following steps:
The deposited metal material on piezoelectric material substrate；
Processing is patterned to metal material, it is interdigital to form metal；
Depositing temperature compensation layer on the metal material, and keep temperature compensating layer covering metal interdigital；
Temperature compensating layer is patterned, cavity structure is formed；
In temperature-compensating layer surface deposited sacrificial layer material, it is filled up completely cavity structure, then sacrificial layer material is carried out flat Smoothization processing forms the sacrificial layer in cavity；
It is deposited on sacrificial layer and graphically forms piezoelectric unit, the piezoelectric unit includes first electrode, piezoelectric layer, the The stack architecture that two electrodes are formed；
Wet etching is carried out to the sacrificial layer in cavity, forms cavity.
Further, further include the steps that the metallic tines are formed in the temperature-compensating refers to extraction electrode.
Further, the step of formation metallic tines refer to extraction electrode includes carrying out figure to the temperature compensating layer Shapeization and deposited metal material.
It further, further include that standard cleaning step is carried out to the piezoelectric material substrate.
What is proposed in the present invention combines resonator based on surface acoustic wave and cavity type film bulk acoustic, by surface acoustic wave resonance Device combines with cavity type thin film bulk acoustic wave resonator, and combination resonator is enabled effectively to play the performance of two kinds of resonators Advantage.
Detailed description of the invention
Fig. 1 is that one kind of the invention is based on surface acoustic wave and cavity type film bulk acoustic combines resonator sectional structure chart；
Fig. 2 is a kind of preparation process stream that resonator is combined based on surface acoustic wave and cavity type film bulk acoustic of the invention Cheng Tu；
Fig. 3 is that one kind of the invention is based on surface acoustic wave and cavity type film bulk acoustic combines resonator partial enlarged view.
Specific embodiment
Below by drawings and examples, technical scheme of the present invention will be described in further detail.
Embodiment 1
Fig. 1 is a kind of section that resonator is combined based on surface acoustic wave and cavity type film bulk acoustic of the embodiment of the present invention Structure chart, the combination resonator include piezoelectric material substrate 100, and the material of piezoelectric material substrate 100 can be lithium niobate, tantalic acid Lithium, aluminium nitride, zinc oxide etc. or combinations thereof；The metal interdigital 200 being formed on the substrate, the material of metal interdigital 200 can For aluminium, titanium, copper, chromium, silver etc. or combinations thereof；Cover the temperature compensating layer 300 of metal interdigital 200, the material of temperature compensating layer 300 It can be silica etc.；300 upper surface of temperature compensating layer is provided with cavity 410 and 410 upper surface of the cavity is pressed completely Electric unit is covered；Piezoelectric unit on temperature compensating layer is set, and piezoelectric unit is for example including by first electrode 500, pressure Electric layer 600, second electrode 700 stack gradually to be formed, wherein first electrode 500, second electrode 700 material can for tungsten, molybdenum, Platinum platinum, ruthenium, iridium, titanium tungsten, aluminium etc. or combinations thereof；The material of piezoelectric layer 600 be, for example, aluminium nitride (AlN), zinc oxide (ZnO), Lithium niobate (LiNbO3), lithium tantalate (LiTaO3) etc. or combinations thereof；It further include that metal interdigital 200 is led into temperature compensating layer Gold, silver, copper, aluminium etc. or combinations thereof can be used in the metallic tines index wire 810 on 300 surfaces, material.
Embodiment 2
On the basis of embodiment 1, second electrode 700 is improved, such as second electrode 700 includes metallic region 701, transitional region 702 and dielectric regions 703, metallic region 701 and piezoelectric layer 600, first electrode 500 constitute the first piezoelectric regions A1, transitional region 702 and piezoelectric layer 600, the second piezoelectric regions A2 of composition of first electrode 500, dielectric regions 703 and piezoelectric layer 600, First electrode 500 constitutes third piezoelectric regions A3, the matter of metallic region and the of poor quality of transitional region, transitional region and dielectric regions Amount difference is selected as with value suitable for reducing energy loss caused by the acoustic irradiation issued from combination resonator.
Wherein, transitional region 702 is metal material or dielectric substance, should if transitional region 702 uses metal material Metal material used in metal material and metallic region 701 is different materials；If transitional region 702 uses dielectric substance, Then the dielectric substance and dielectric substance used in dielectric regions 703 are different materials, selected by transitional region Material is different, come adjust transitional region and metallic region, dielectric regions it is of poor quality.
In the present embodiment, the quality difference of the metallic region and transitional region is 2% to 3%, transitional region and dielectric The of poor quality of region is 1% to 15%, belongs to the ropy of region and the of poor quality of transitional region, transitional region and dielectric regions It is 3% to 18% with value
There are problems that certain energy dissipation in thin film bulk acoustic wave resonator, the tool of the energy dissipation and second electrode 700 Body structure is related, and after thin film bulk acoustic wave resonator is combined with temperature-compensating SAW resonator, energy dissipation is to combination Resonator still has a certain impact, and with the specific performance of temperature-compensating SAW resonator difference, the size of the influence Also different.Therefore the structure of second electrode 700 in combination resonator is improved in the present embodiment, is classified as metal area Domain 701, transitional region 702 and dielectric regions 703, wherein metallic region 701 use metal electrode material, material can for tungsten, Molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium etc. or combinations thereof；Dielectric regions 703 use dielectric substance, and material can be platinum, five oxygen Change two tantalums or combinations thereof；Transitional region 702 can use metal electrode material or dielectric according to the different use demands of device Material, if using metal material, using tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium etc. or combinations thereof, if using dielectric material Material then uses platinum, tantalum pentoxide or combinations thereof.The energy dissipation in resonator is combined come flexible compensation by transition region, is led to Adjustment metallic region, transitional region, the difference in quality between dielectric regions three are crossed, so that metal electrode and dielectric be adjusted flexibly Difference in quality between region effectively reduces the energy dissipation in resonator.
Embodiment 3
Fig. 2 is to prepare a kind of technique based on surface acoustic wave and cavity type film bulk acoustic combination resonator in embodiment 1 Flow chart, the preparation flow include:
Prepare piezoelectric material substrate 100, standard cleaning is carried out, as shown in Fig. 2 (a).
The deposited metal material on piezoelectric material substrate 100.The metal material can be the gold such as aluminium, titanium, copper, gold, chromium, silver One or a combination set of belong to, the technique of deposition generally uses electron beam evaporation, physical vapour deposition (PVD), atomic layer deposition, pulse laser Deposition etc.；Processing is patterned to metal material, wherein can graphically use such as photoetching treatment commonly used in the art, shape At metal interdigital 200, as shown in Fig. 2 (b).
Depositing temperature compensation layer 300 on the metal material, and temperature compensating layer 300 is made to cover metal interdigital 200, i.e. temperature Compensation layer 300 is filled up completely the gap of metal interdigital 200.In addition, it is further, planarization process is carried out to temperature compensating layer, The planarisation step is for example, by using CMP step, as shown in Fig. 2 (c).
Temperature compensating layer 300 is patterned, cavity structure 310 is formed, as shown in Fig. 2 (d)；
In temperature-compensating layer surface deposited sacrificial layer material, it is filled up completely cavity structure 310, then sacrificial layer material is carried out Planarization process forms the sacrificial layer 400 in cavity, as shown in Fig. 2 (e)；
Processing is patterned to temperature compensating layer 300, metal lead wire through-hole 800 is formed, as shown in Fig. 2 (f).
The deposited metal material 810 in metal lead wire through-hole is filled up completely metal lead wire through-hole 800, and further progress Planarization process, as shown in Fig. 2 (g).
First electrode 500 is deposited in temperature compensating layer 300, and carries out graphical treatment, wherein first electrode 500 Material includes one or a combination set of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium, as shown in Fig. 2 (h).
The depositing piezoelectric layer 600 in first electrode 500, and graphical treatment is carried out, as shown in Fig. 2 (i).The piezoelectric layer 600 material includes one of aluminium nitride (AlN), zinc oxide (ZnO), lithium niobate (LiNbO3), lithium tantalate (LiTaO3) or its group It closes.
Second electrode 700 is deposited on 600 over the piezoelectric layer, and carries out graphical treatment, as shown in Fig. 2 (i).
Wet etching is carried out to the sacrificial layer 400 in cavity, cavity 410 is formed, as shown in Fig. 2 (j).
It should be further noted that the embodiment of the present invention 3 illustrate schematicallys the preparation process of device of the present invention, but The understanding based on art technology, can also to wherein the step of improve or adjust, such as formed metal lead wire hole 800, it and 810 step of deposited metal material, can also be carried out after having prepared piezoelectric unit.
It is innovative by temperature-compensating SAW resonator and cavity type thin-film body in preparation method provided by the invention Acoustic resonator is incorporated into the same processing step, more efficient from technological angle, can be more flexible from angles of product.
The above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although referring to preferred embodiment to this hair It is bright to be described in detail, those skilled in the art should understand that, it can modify to technical solution of the present invention Or equivalent replacement, without departing from the spirit and scope of the technical solution of the present invention.

Claims (10)

1.一种基于声表面波和空腔型薄膜体声波组合谐振器，其特征在于，所述组合谐振器包括依次堆叠的压电材料基板、金属叉指、温度补偿层、压电单元；其中所述金属叉指形成在所述压电材料基板上方，所述温度补偿层覆盖所述金属叉指，所述温度补偿层上表面开有空腔且所述空腔上表面完全被压电单元所覆盖，所述压电单元形成在所述温度补偿层上方，所述压电单元包括第一电极、压电层、第二电极所形成的堆栈结构，其中所述第一电极设置在所述空腔上方且完全覆盖所述空腔。1. a combined resonator based on surface acoustic wave and cavity type thin film bulk acoustic wave, is characterized in that, described combined resonator comprises piezoelectric material substrate, metal interdigital, temperature compensation layer, piezoelectric unit stacked successively; Wherein The metal fingers are formed above the piezoelectric material substrate, the temperature compensation layer covers the metal fingers, a cavity is opened on the upper surface of the temperature compensation layer, and the upper surface of the cavity is completely covered by the piezoelectric unit. covered, the piezoelectric unit is formed above the temperature compensation layer, the piezoelectric unit includes a stack structure formed by a first electrode, a piezoelectric layer, and a second electrode, wherein the first electrode is arranged on the above and completely covering the cavity. 2.根据权利要求1所述的一种基于声表面波和空腔型薄膜体声波组合谐振器，其特征在于，所述压电材料基板的材料包括铌酸锂、钽酸锂、氮化铝、氧化锌或其组合。2. A combined resonator based on surface acoustic wave and cavity type thin film bulk acoustic wave according to claim 1, wherein the material of the piezoelectric material substrate comprises lithium niobate, lithium tantalate, aluminum nitride , zinc oxide, or a combination thereof. 3.根据权利要求1所述的一种基于声表面波和空腔型薄膜体声波组合谐振器，其特征在于，所述金属叉指的材料包括铝、钛、铜、铬、银或其组合，和/或所述温度补偿层的材料包括二氧化硅。3. A combined resonator based on surface acoustic wave and cavity type thin film bulk acoustic wave according to claim 1, wherein the material of the metal fingers comprises aluminum, titanium, copper, chromium, silver or a combination thereof , and/or the material of the temperature compensation layer includes silicon dioxide. 4.根据权利要求1所述的一种基于声表面波和空腔型薄膜体声波组合谐振器，其特征在于，所述压电层的材料包括氮化铝(AlN)、氧化锌(ZnO)、铌酸锂(LiNbO3)、钽酸锂(LiTaO3)或其组合。4. A combined resonator based on surface acoustic wave and cavity type thin film bulk acoustic wave according to claim 1, wherein the material of the piezoelectric layer comprises aluminum nitride (AlN), zinc oxide (ZnO) , lithium niobate (LiNbO3), lithium tantalate (LiTaO3), or a combination thereof. 5.根据权利要求1所述的一种基于声表面波和空腔型薄膜体声波组合谐振器，其特征在于，所述第二电极包括金属区域、过渡区域和介电区域，金属区域与压电层、第一电极构成第一压电区，过渡区域与压电层、第一电极构成第二压电区，介电区域与压电层、第二电极构成第三压电区，金属区域与过渡区域的质量差、过渡区域与介电区域的质量差的和值被选择为适于降低从组合谐振器发出的声波辐射所导致的能量损耗。5. A combined resonator based on surface acoustic wave and cavity type thin film bulk acoustic wave according to claim 1, wherein the second electrode comprises a metal region, a transition region and a dielectric region, and the metal region and the pressure The electrical layer and the first electrode constitute the first piezoelectric region, the transition region, the piezoelectric layer and the first electrode constitute the second piezoelectric region, the dielectric region, the piezoelectric layer and the second electrode constitute the third piezoelectric region, and the metal region The sum of the mass difference of the transition region, the mass difference of the transition region and the dielectric region is chosen to be suitable for reducing energy losses due to acoustic radiation emanating from the combined resonator. 6.根据权利要求5所述的一种基于声表面波和空腔型薄膜体声波组合谐振器，其特征在于，所述金属区域与过渡区域的质量差异为2％到3％，过渡区域与介电区域的质量差为1％到15％。6. A combined resonator based on surface acoustic wave and cavity type thin film bulk acoustic wave according to claim 5, characterized in that, the mass difference between the metal region and the transition region is 2% to 3%, and the transition region is 2% to 3%. The quality difference of the dielectric regions is 1% to 15%. 7.一种组合谐振器的制备方法，其特征在于，包括以下步骤：7. a preparation method of combined resonator, is characterized in that, comprises the following steps: 在压电材料基板上沉积金属材料；depositing a metal material on a piezoelectric material substrate; 对金属材料进行图形化处理，形成金属叉指；The metal material is patterned to form metal fingers; 在金属材料上沉积温度补偿层，且使温度补偿层覆盖金属叉指；depositing a temperature compensation layer on the metal material, and making the temperature compensation layer cover the metal fingers; 对温度补偿层进行图形化，形成空腔结构；The temperature compensation layer is patterned to form a cavity structure; 在温度补偿层表面沉积牺牲层材料，完全填充空腔结构，再对牺牲层材料进行平坦化处理形成空腔内的牺牲层；A sacrificial layer material is deposited on the surface of the temperature compensation layer to completely fill the cavity structure, and then the sacrificial layer material is planarized to form a sacrificial layer in the cavity; 在牺牲层上沉积并图形化形成压电单元，所述压电单元包括第一电极、压电层、第二电极形成的堆栈结构；Deposition and patterning on the sacrificial layer to form a piezoelectric unit, the piezoelectric unit includes a stack structure formed by a first electrode, a piezoelectric layer, and a second electrode; 去除所述空腔内的牺牲层，形成空腔。The sacrificial layer in the cavity is removed to form a cavity. 8.根据权利要求7所述的一种组合谐振器的制备方法，其特征在于，还包括在所述温度补偿上形成所述金属叉指引出电极的步骤。8 . The method for manufacturing a composite resonator according to claim 7 , further comprising the step of forming the metal prongs outgoing electrodes on the temperature compensation. 9 . 9.根据权利要求8所述的一种组合谐振器的制备方法，其特征在于，所述形成所述金属叉指引出电极的步骤包括对所述温度补偿层进行图形化并沉积金属材料。9 . The method for manufacturing a composite resonator according to claim 8 , wherein the step of forming the metal prongs outgoing electrodes comprises patterning the temperature compensation layer and depositing a metal material. 10 . 10.根据权利要求7所述的一种组合谐振器的制备方法，其特征在于，还包括对所述压电材料基板进行标准清洗步骤。10 . The method for preparing a combined resonator according to claim 7 , further comprising a standard cleaning step on the piezoelectric material substrate. 11 .
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CN114884483A (en) * 2022-05-09 2022-08-09 上海芯波电子科技有限公司 SAW and BAW mixed laminated filter chip and manufacturing process thereof

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