CN112803911A - Preparation method of surface acoustic wave transducer with temperature compensation function - Google Patents
Preparation method of surface acoustic wave transducer with temperature compensation function Download PDFInfo
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- H—ELECTRICITY
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- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention discloses a preparation method of a surface acoustic wave transducer with a temperature compensation function, which relates to the field of surface acoustic wave device manufacture and comprises the following steps: preparing an interdigital transducer on a piezoelectric substrate, wherein the interdigital transducer comprises a first interdigital structure and a second interdigital structure which are oppositely and crossly arranged, and the two interdigital structures are the same and respectively comprise a first interdigital electrode and a second interdigital electrode which is used as a sacrificial layer; preparing a first temperature compensation dielectric film on a piezoelectric substrate, wherein the profile appearance of the first temperature compensation dielectric film has the characteristics of being convex above an electrode and flat above a finger gap of an adjacent electrode; reducing the thickness of the first temperature compensation dielectric film to be close to the thickness of the first interdigital electrode to form a first temperature compensation dielectric layer; corroding and stripping the sacrificial layer; and preparing a second temperature compensation dielectric layer on the surfaces of the first-class interdigital electrodes and the first temperature compensation dielectric layer. The surface appearance of the medium is controlled by utilizing a sacrificial layer technology, the insertion loss is reduced and the performance of the surface acoustic wave transducer is improved through the control of the double-layer medium.
Description
Technical Field
The invention relates to the field of manufacturing of surface acoustic wave devices, in particular to a surface acoustic wave resonator or filter required in signal processing of wireless communication equipment, and particularly relates to a preparation method of a surface acoustic wave transducer with a temperature compensation function.
Background
Surface Acoustic Wave (SAW) technology is a radio frequency electronics subject that combines acoustics, electronics, piezoelectric materials, and semiconductor planar processes. Because the SAW transducer works in a radio frequency band, the SAW transducer has the unique advantages of low electro-acoustic conversion loss, flexible design and easy manufacture, thereby being widely applied and being an important component of various SAW devices.
The radio frequency filter plays a crucial role in communication equipment and terminals, can filter out-of-band interference and noise to meet the requirements of radio frequency systems and communication protocols on signal to noise ratio, and along with the development of communication technology, the technical development of the radio frequency filter has the characteristics of high frequency, low temperature drift, low loss, miniaturization and the like. With the continuous expansion of the application range and the rapid development of communication technology, the frequency of SAW devices is higher and higher, and people are also eager for high-performance SAW devices. However, the current electroacoustic transducer using the conventional technology has a frequency drift problem under the condition of temperature change. Under the current situation that the communication frequency band is increasingly compact, the communication equipment is very easy to have abnormal serial frequency when used in different temperature environments, so that the communication signal is poor. Therefore, the international academy of academic circles have proposed a TCSAW (temperature Compensated Surface Acoustic wave) device with temperature compensation function, using SiO2The dielectric is filled in the upper layer of IDT of the traditional SAW device, but the solutions are single-layer SiO2Media, which do not have flexibility in process and design, limit the development of TCSAW technology.
Disclosure of Invention
The inventor provides a preparation method of a surface acoustic wave transducer with a temperature compensation function aiming at the problems and the technical requirements, the surface appearance of a medium is controlled by utilizing a sacrificial layer technology, and the insertion loss is reduced and the bandwidth of a TCSAW device is improved by controlling a double-layer temperature compensation medium.
The technical scheme of the invention is as follows:
the interdigital transducer comprises a first interdigital structure and a second interdigital structure which are oppositely arranged in a crossed manner, as well as a first bus bar connected with a comb handle part of the first interdigital structure and a second bus bar connected with a comb handle part of the second interdigital structure, wherein each interdigital structure is respectively arranged between two adjacent electrode fingers of the other interdigital structure and is not in contact with each other, and an interdigital area is formed between the end edge of the first interdigital structure and the end edge of the second interdigital structure;
the first interdigital structure and the second interdigital structure have the same structure and both comprise a first interdigital electrode and a second interdigital electrode which is arranged on the first interdigital electrode and used as a sacrificial layer;
and 6, preparing a second temperature compensation medium layer on the surfaces of the first-class interdigital electrodes and the first temperature compensation medium layer, wherein the coverage area of the second temperature compensation medium layer at least comprises the whole interdigital area.
The further technical scheme is that the first-type interdigital electrode is a single-layer or multi-layer metal electrode layer.
The further technical scheme is that the second interdigital electrode is a single-layer metal electrode layer.
The further technical scheme is that the ratio of the interdigital width of the interdigital electrode in the interdigital area to the width of the interdigital gap is 1:4-4:1, and the metallization ratio of the interdigital electrode in the interdigital area is 0.2-0.8.
The further technical scheme is that the material of the first interdigital electrode comprises at least one of Ti, Al, Cu, Ag, Ni, Cr, Pt, Au, W and Mo, and the thickness of the first interdigital electrode is 3% -25% of the period length of the interdigital electrode of the interdigital transducer.
The further technical scheme is that the second interdigital electrode is made of Ti, Al, Cu, Cr, Ni, W, Au, Pt, ZnO, Al2O3 and SiO2SiN, SiOF and BSG, and the thickness of the second type of interdigital electrode is 10% -150% of the thickness of the first type of interdigital electrode, which is different from the surface metal material of the first type of interdigital electrode.
The further technical proposal is that the material of the first temperature compensation medium film in the step 3 comprises SiO2、BSG、SiOF、SiON、Si3N4、TeO2The thickness of the rest first temperature compensation medium films is not less than that of the first interdigital electrode, and the height difference from the highest position to the lowest position of the surfaces of the first temperature compensation medium films in the adjacent electrode finger gaps is less than 25% of the thickness of the first interdigital electrode.
The further technical scheme is that the thickness of the first temperature compensation medium layer in the step 5 is 3% -15% of the period length of the interdigital electrode of the interdigital transducer, and the ratio of the thickness of the first temperature compensation medium layer to the thickness of the first interdigital electrode is 1:3-2: 1.
It further comprisesThe material of the second temperature compensation dielectric layer comprises SiO2、BSG、SiOF、SiON、Si3N4、TeO2Of the second temperature-compensating dielectric layer is 10% -40% of the period length of the interdigital electrodes of the interdigital transducer.
The further technical scheme is that the piezoelectric substrate is made of quartz, lithium niobate, lithium tantalate, aluminum nitride or zinc oxide bulk or thin film.
The beneficial technical effects of the invention are as follows:
the preparation method disclosed by the application can realize that the thickness of the first temperature compensation medium layer is equal to that of the interdigital electrode, so that the planarization structure of the medium surface is realized. The planarization technology does not need to increase the investment of CMP (Chemical Mechanical Polishing) equipment, and can reduce the consumption of abrasive materials, thereby reducing the production and processing cost. In conventional TCSAW device processing, the temperature compensation medium has only one layer and the deposition rate is slow. In the application, the two layers of temperature compensation media are processed in two steps, so that the two layers of temperature compensation media are conveniently and separately controlled technically, only the first temperature compensation media layer is required to adopt a slower deposition rate, meanwhile, the thickness can be controlled to be very thin, the slow deposition process is shortened, and a fast deposition mode can be selected during the deposition of the second temperature compensation media layer, so that the processing time can be greatly shortened, and the production efficiency is improved. Generally, the method is easy to popularize on a large scale, and therefore, the method has high application value.
Drawings
Fig. 1 is a top view of a surface acoustic wave transducer disclosed in embodiment 1 of the present application.
Fig. 2 is a sectional view of the surface acoustic wave transducer disclosed in embodiment 1 of the present application.
Fig. 3 is a top view of the surface acoustic wave transducer disclosed in embodiment 2 of the present application.
Fig. 4 is a sectional view of the surface acoustic wave transducer disclosed in embodiment 2 of the present application.
FIG. 5 is a flow chart of a method of fabricating a surface acoustic wave transducer as disclosed herein.
Fig. 6 is a diagram showing the respective steps of the method for manufacturing a surface acoustic wave transducer disclosed in example 1 of the present application.
Fig. 7 is a performance test chart of the surface acoustic wave filter disclosed in embodiment 1 of the present application.
Detailed Description
The following further describes the embodiments of the present invention with reference to the drawings.
With reference to fig. 1-4, the present application discloses a surface acoustic wave transducer with temperature compensation function, which includes a piezoelectric substrate 1, an interdigital transducer and a first temperature compensation medium layer 6a disposed on the piezoelectric substrate 1, and a second temperature compensation medium layer 6b disposed on the first temperature compensation medium layer 6a, wherein the piezoelectric substrate 1 is made of a bulk or thin film of quartz, lithium niobate, lithium tantalate, aluminum nitride, or zinc oxide. The interdigital transducer comprises a first interdigital electrode I2 and a second interdigital electrode I3 which are oppositely arranged in a crossed mode, a first bus bar 4 connected with a comb handle portion of the first interdigital electrode I2 and a second bus bar 5 connected with a comb handle portion of the second interdigital electrode I3, wherein each interdigital electrode is respectively arranged between two adjacent electrode fingers of the other interdigital electrode and is not in contact with each other. In the present application, the material of the interdigital electrode of the interdigital transducer includes at least one of Ti, Al, Cu, Ag, Ni, Cr, Pt, Au, Mo.
An interdigital area is formed between the end edge of the first interdigital electrode I2 and the end edge of the second interdigital electrode I3, the ratio of the interdigital width of the interdigital electrode in the interdigital area to the width of the interdigital gap is 1:4-4:1, the metallization ratio of the interdigital electrode in the interdigital area is 0.2-0.8, and the thickness of the interdigital electrode in the interdigital area is 3-25% of the period length lambda of the interdigital electrode of the interdigital transducer.
Two temperature compensation medium layers 6 are further arranged in the interdigital area on the piezoelectric substrate 1, and the two temperature compensation medium layers 6 completely cover the whole interdigital area. The material of the two temperature compensation dielectric layers 6 comprises SiO2BSG (boro-bonded Silicon Glass), SiOF, SiON, Si3N4、TeO2At least one of (1). The thickness of the first temperature compensation medium layer 6a is the periphery of the interdigital electrode of the interdigital transducer3-15% of the period length lambda, the ratio of the thickness of the first temperature compensation medium layer 6a to the thickness of the electrode is 1:3-2:1, and the thickness of the second temperature compensation medium layer 6b is 10-40% of the period length lambda of the interdigital electrode of the interdigital transducer.
The surface acoustic wave device has higher temperature stability by depositing the temperature compensation dielectric layer on the surface of the interdigital transducer in two steps. And the two layers of temperature compensation media have the characteristic of free adjustability, so that the device has greater flexibility in design. The first temperature compensation dielectric layer can be set to be a low-stress dielectric, so that acoustic propagation loss of the device can be reduced, insertion loss performance of the device can be improved, mechanical damage of the device can be reduced, and reliability of the device can be improved. The thickness of the first temperature compensation medium layer can be selected according to different preferences of the transducer design and is set to be equal to or not equal to the thickness of the first type interdigital electrodes. For surface acoustic wave transducers with a dominant rayleigh mode, the thickness of the first temperature compensation dielectric layer is better as it approaches the thickness of the interdigital electrode (e.g., example 1), and for surface acoustic wave transducers with a dominant shear mode, the thickness of the first temperature compensation dielectric layer is better if it is different from the thickness of the interdigital electrode (e.g., example 2).
In order to obtain the surface acoustic wave transducer with the temperature compensation function, the present application also discloses a method for manufacturing the surface acoustic wave transducer with the temperature compensation function, and a flow chart of the manufacturing method is shown in fig. 5, and is explained by the following two embodiments.
Example 1:
the preparation method for preparing the surface acoustic wave transducer with the temperature compensation function comprises the following steps of:
And 2, preparing the interdigital transducer on the piezoelectric substrate 1 through photoetching, evaporation, stripping and other processes.
The interdigital transducer comprises a first interdigital structure and a second interdigital structure which are oppositely arranged in a crossed mode, a first bus bar connected with a comb handle portion of the first interdigital structure and a second bus bar connected with a comb handle portion of the second interdigital structure, each interdigital structure is respectively arranged between two adjacent electrode fingers of the other interdigital structure and is not in contact with each other, an interdigital area is formed between the end edge of the first interdigital structure and the end edge of the second interdigital structure, the ratio of the interdigital width of an interdigital electrode in the interdigital area to the width of an interdigital gap is 1:4-4:1, and the metallization ratio of the interdigital electrode in the interdigital area is 0.2-0.8.
The first interdigital structure and the second interdigital structure have the same structure and both comprise a first interdigital electrode and a second interdigital electrode arranged on the first interdigital electrode, and the second interdigital electrode is used as a sacrificial layer. The first interdigital electrode is a single-layer or multi-layer metal electrode layer, the material of the first interdigital electrode comprises at least one of Ti, Al, Cu, Ag, Ni, Cr, Pt, Au, W and Mo, and the thickness of the first interdigital electrode is 3% -25% of the period length of the interdigital electrode of the interdigital transducer. The second interdigital electrode is a single-layer metal electrode layer, and the material of the second interdigital electrode is Ti, Al, Cu, Cr, Ni, W, Au, Pt, ZnO, Al2O3, SiO2SiN, SiOF and BSG, and the thickness of the second type of interdigital electrode is 10% -150% of the thickness of the first type of interdigital electrode, which is different from the surface metal material of the first type of interdigital electrode.
Specifically, as shown in fig. 1, fig. 2, and fig. 6(b), the period length λ of the interdigital electrode of the interdigital transducer is set to 1.85-2.15um, and the metallization ratio of the interdigital electrode in the interdigital area is 0.46. The first interdigital structure comprises a first interdigital electrode I2 and a first interdigital electrode II 7, and the second interdigital structure comprises a second interdigital electrode I3 and a second interdigital electrode II 8, wherein the first interdigital electrode I2 and the second interdigital electrode I3 are used as the first interdigital electrode, Cr/Ag/Cu/Cr is used as a material to form a multilayer metal structure, and the total thickness is set to be 7% of the period length lambda of the interdigital electrodes of the interdigital transducer. The first interdigital electrode II 7 and the second interdigital electrode II 8 are used as a second interdigital electrode, namely a sacrificial layer, pure Al metal is used as a material, and the thickness is set to be 70% of the thickness of the first interdigital electrode.
And step 3, preparing a first temperature compensation dielectric film 9 on the piezoelectric substrate 1 in a PVD (physical vapor deposition) sputtering deposition mode, wherein the material is BSG, as shown in fig. 6(c), the coverage range of the first temperature compensation dielectric film 9 exceeds the whole interdigital area, the first temperature compensation dielectric film covers the edge parts of the first bus bar 4 and the second bus bar 5, and the cross-sectional shape of the first temperature compensation dielectric film 9 in the interdigital area has the characteristics of being convex above the interdigital electrode and being flat above the finger gap of the adjacent electrode.
The thickness of the rest first temperature compensation medium films except the first temperature compensation medium film above the interdigital electrode is not less than that of the first interdigital electrode, and the ratio of the thickness of the first temperature compensation medium film to the thickness of the first interdigital electrode is 1:1-3: 1. Specifically, the film thickness of the first temperature compensation dielectric film 9 at the adjacent electrode finger gap is set to be 15% of the period length λ of the interdigital electrode of the interdigital transducer, and the film thickness is greater than 7% of the thickness of the first type of interdigital electrode, and the height difference from the highest position to the lowest position of the surface of the first temperature compensation dielectric film in the adjacent electrode finger gap (i.e., the flatness of the dielectric) is 15% of the thickness of the first type of interdigital electrode.
And 4, introducing SF6 or CF4 etching gas by using an ICP etching device, and performing dry etching on the first temperature compensation dielectric film 9, as shown in fig. 6(d), reducing the thickness of the rest first temperature compensation dielectric films 9 to 7% of the period length lambda of the interdigital electrodes of the interdigital transducer except for the first temperature compensation dielectric film 9 above the interdigital electrodes, so as to form a first temperature compensation dielectric layer 6a, wherein the ratio of the thickness of the first temperature compensation dielectric layer 6a to the thickness of the first interdigital electrodes 2 and 3 is 1: 1. The etching gas of SF6 or CF4 cannot corrode the metal Al of the second interdigital electrodes 7 and 8, and finally the first temperature compensation medium layer 6a forms a flat surface in the gaps between the adjacent electrode fingers and has the height which is flush with the first interdigital electrodes 2 and 3 of the interdigital transducer.
And 5, corroding the pure Al metal layer of the second interdigital electrodes 7 and 8 (namely the sacrificial layer) by using an aluminum corrosive liquid, and stripping the sacrificial layer and the first temperature compensation dielectric film 9 above the sacrificial layer simultaneously as shown in fig. 6(e), so that a flat surface topography is formed between the first interdigital electrodes 2 and 3 and the first temperature compensation dielectric layer 6 a. The main components of the aluminum corrosive liquid are nitric acid, phosphoric acid and acetic acid, pure Al can be quickly corroded, and BSG materials of the first temperature compensation dielectric layer 6a and Cr metal on the tops of the first-class interdigital electrodes 7 and 8 are not corroded.
Optionally, the method for preparing the temperature compensation dielectric layer in step 3 and step 6 is one of PECVD, HDPCVD, PVD and SOG, and may be selected according to actual situations.
The results of the performance test of the surface acoustic wave filter manufactured by the method of this example 1 are shown in fig. 7. The abscissa represents frequency, the ordinate represents insertion loss of the device, the central frequency is 1726M, the minimum insertion loss is within-1.0 dB, the in-band fluctuation is small, the pass band is flat, the frequency temperature coefficient test result is-22 ppm/DEG C, and LiNbO3The frequency temperature coefficient of the conventional SAW device prepared on the crystal is-84 ppm/DEG C, so that the frequency temperature coefficient of the surface acoustic wave filter prepared by the surface acoustic wave transducer with the temperature compensation function is greatly improved, and the performance is excellent.
Example 2:
the preparation method for preparing the surface acoustic wave transducer with the temperature compensation function comprises the following steps:
And 2, preparing the interdigital transducer on the piezoelectric substrate 1 through photoetching, evaporation, stripping and other processes.
The structure of the interdigital transducer is the same as that of embodiment 1, and will not be described herein. Specifically, as shown in fig. 3, 4, and 6(b), the period length λ of the interdigital electrode of the interdigital transducer is set to 3.8-4.2um, and the metallization ratio of the interdigital electrode in the interdigital area is 0.52. The first interdigital structure comprises a first interdigital electrode I2 and a first interdigital electrode II 7, and the second interdigital structure comprises a second interdigital electrode I3 and a second interdigital electrode II 8, wherein the first interdigital electrode I2 and the second interdigital electrode I3 are used as the first interdigital electrode, Ti/Ag/Cu/Ti is used for forming a multilayer metal structure, and the total thickness is set to be 5% of the period length lambda of the interdigital electrodes of the interdigital transducer. The first interdigital electrode II 7 and the second interdigital electrode II 8 are taken as a second interdigital electrode, namely a sacrificial layer, the material is pure Cr metal, and the thickness is set to be 100% of the thickness of the first electrode layer.
And 3, preparing a first temperature compensation dielectric film 9 on the piezoelectric substrate 1 in an HDPCVD deposition mode, wherein the material is SiOF, the coverage area of the first temperature compensation dielectric film 9 just comprises the whole interdigital area, and the cross section morphology of the first temperature compensation dielectric film 9 in the interdigital area has the characteristics of protrusion above the interdigital electrode and flatness above the finger gap of the adjacent electrode.
The thickness of the rest first temperature compensation medium films except the first temperature compensation medium film above the interdigital electrode is not less than that of the first interdigital electrode, and the ratio of the thickness of the first temperature compensation medium film to the thickness of the first interdigital electrode is 1:1-3: 1. Specifically, the film thickness of the first temperature compensation dielectric film 9 at the adjacent electrode finger gap is set to be 12% of the period length λ of the interdigital electrode of the interdigital transducer, and the film thickness is greater than 5% of the thickness of the first type interdigital electrode, and the height difference from the highest position to the lowest position of the surface of the first temperature compensation dielectric film in the adjacent electrode finger gap (i.e., the flatness of the dielectric) is 10% of the thickness of the first type interdigital electrode.
And 4, introducing SF6 or CF4 etching gas by using ICP etching equipment, and performing dry etching on the first temperature compensation dielectric film 9, except the first temperature compensation dielectric film 9 above the interdigital electrode, and reducing the thickness of the rest first temperature compensation dielectric film 9 to 7% of the period length lambda of the interdigital electrode of the interdigital transducer, so as to form a first temperature compensation dielectric layer 6a, wherein the ratio of the thickness of the first temperature compensation dielectric layer 6a to the thickness of the first interdigital electrode 2, 3 is 1.4: 1. The metal Cr of the second interdigital electrode 7, 8 cannot be corroded by the SF6 or CF4 etching gas, and finally the first temperature compensation medium layer 6a forms a flat surface in the gap between the adjacent electrode fingers and is slightly higher than the first interdigital electrode 2, 3 of the interdigital transducer.
And 5, corroding the pure Cr metal layers of the second interdigital electrodes 7 and 8 (namely the sacrificial layers) by using a chromium corrosive liquid, and stripping the sacrificial layers and the first temperature compensation dielectric film 9 above the sacrificial layers simultaneously, so that a high-low staggered surface morphology is formed between the first interdigital electrodes 2 and 3 and the first temperature compensation dielectric layer 6 a. The chromium etchant used is capable of etching pure Cr quickly, but does not etch the SiOF material of the first temperature compensation dielectric layer 6a and the Ti metal on top of the interdigital electrodes 7, 8 of the first type.
And 6, preparing a second temperature compensation medium layer 6b on the surfaces of the first-class interdigital electrodes 2 and 3 and the first temperature compensation medium layer 6a in a PVD (physical vapor deposition) sputtering mode, wherein the material is SiON, the thickness of the SiON is 28% of the period length lambda of the interdigital electrodes of the interdigital transducer, and the coverage range of the second temperature compensation medium layer 6b just comprises the whole interdigital area.
What has been described above is only a preferred embodiment of the present application, and the present invention is not limited to the above embodiment. It is to be understood that other modifications and variations directly derivable or suggested by those skilled in the art without departing from the spirit and concept of the present invention are to be considered as included within the scope of the present invention.
Claims (10)
1. A method for preparing a surface acoustic wave transducer with a temperature compensation function is characterized by comprising the following steps:
step 1, obtaining a piezoelectric substrate and cleaning the surface;
step 2, preparing an interdigital transducer on the piezoelectric substrate;
the interdigital transducer comprises a first interdigital structure and a second interdigital structure which are oppositely arranged in a crossed manner, a first bus bar connected with a comb handle part of the first interdigital structure and a second bus bar connected with a comb handle part of the second interdigital structure, each interdigital structure is respectively arranged between two adjacent electrode fingers of the other interdigital structure and is not in contact with each other, and an interdigital area is formed between the end edge of the first interdigital structure and the end edge of the second interdigital structure;
the first interdigital structure and the second interdigital structure have the same structure and both comprise a first interdigital electrode and a second interdigital electrode which is arranged on the first interdigital electrode and used as a sacrificial layer;
step 3, preparing a first temperature compensation medium film on the piezoelectric substrate, wherein the coverage area of the first temperature compensation medium film at least comprises the whole interdigital area, and the profile morphology of the first temperature compensation medium film in the interdigital area has the characteristics of protrusion above an interdigital electrode and flatness above a finger gap of an adjacent electrode;
step 4, using a dry etching or wet etching method to reduce the thickness of the rest first temperature compensation dielectric films to be near the thickness of the first-class interdigital electrode except the first temperature compensation dielectric film above the interdigital electrode, thereby forming a first temperature compensation dielectric layer; the dry etching gas or the wet etching liquid has etching selectivity, only etches the first temperature compensation medium film, and does not etch the sacrificial layer;
step 5, corroding and stripping the sacrificial layer and the first temperature compensation medium film above the sacrificial layer by using a wet corrosion method, so as to form a flat or high-low staggered surface topography between the first-class interdigital electrode and the first temperature compensation medium layer, wherein the used wet corrosion liquid has corrosion selectivity, quickly corrodes the sacrificial layer, and does not corrode or extremely slowly corrode the first temperature compensation medium layer;
and 6, preparing a second temperature compensation medium layer on the surfaces of the first-class interdigital electrodes and the first temperature compensation medium layer, wherein the coverage area of the second temperature compensation medium layer at least comprises the whole interdigital area.
2. The method of claim 1, wherein the first interdigital electrode is a single-layer or multi-layer metal electrode layer.
3. The method according to claim 1, wherein the interdigital electrodes of the second type are single-layer metal electrode layers.
4. The method according to any one of claims 1 to 3, wherein the ratio of the finger width of the finger electrodes in the finger area to the width of the finger gap is 1:4 to 4:1, and the metallization ratio of the finger electrodes in the finger area is 0.2 to 0.8.
5. The method according to claim 1 or 2, wherein the material of the first interdigital electrode comprises at least one of Ti, Al, Cu, Ag, Ni, Cr, Pt, Au, W, Mo, and the thickness of the first interdigital electrode is 3% -25% of the period length of the interdigital electrodes of the interdigital transducer.
6. The method according to claim 1 or 3, wherein the material of the interdigital electrode of the second type is Ti, Al, Cu, Cr, Ni, W, Au, Pt, ZnO, Al2O3, SiO2SiN, SiOF and BSG, and the thickness of the second type of interdigital electrode is 10% -150% of the thickness of the first type of interdigital electrode, which is different from the surface metal material of the first type of interdigital electrode.
7. The method according to claim 1, wherein the material of the first temperature compensation dielectric film in step 3 comprises SiO2、BSG、SiOF、SiON、Si3N4、TeO2The thickness of the rest first temperature compensation medium film is not less than the thickness of the first interdigital electrode, and the height difference from the highest position to the lowest position of the surface of the first temperature compensation medium film in the adjacent electrode finger gap is less than 25% of the thickness of the first interdigital electrode.
8. The method according to claim 1, wherein the thickness of the first temperature compensation medium layer in step 5 is 3% -15% of the period length of the interdigital electrodes of the interdigital transducer, and the ratio of the thickness of the first temperature compensation medium layer to the thickness of the first interdigital electrode is 1:3-2: 1.
9. The method of claim 1, wherein the material of the second temperature compensating dielectric layer comprises SiO2、BSG、SiOF、SiON、Si3N4、TeO2The thickness of the second temperature compensation medium layer is 10% -40% of the period length of the interdigital electrode of the interdigital transducer.
10. The method of claim 1, wherein the material of the piezoelectric substrate is a bulk or thin film of quartz, lithium niobate, lithium tantalate, aluminum nitride, or zinc oxide.
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