CN109474255A - Thin film bulk acoustic wave resonator and preparation method thereof, filter - Google Patents
Thin film bulk acoustic wave resonator and preparation method thereof, filter Download PDFInfo
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- CN109474255A CN109474255A CN201811356081.3A CN201811356081A CN109474255A CN 109474255 A CN109474255 A CN 109474255A CN 201811356081 A CN201811356081 A CN 201811356081A CN 109474255 A CN109474255 A CN 109474255A
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- 239000010409 thin film Substances 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title abstract description 7
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- 238000004519 manufacturing process Methods 0.000 claims abstract description 24
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- 238000001259 photo etching Methods 0.000 claims description 15
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- 238000001039 wet etching Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
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- 238000004528 spin coating Methods 0.000 claims description 4
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- 238000010586 diagram Methods 0.000 description 4
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- 229910021389 graphene Inorganic materials 0.000 description 4
- 238000000427 thin-film deposition Methods 0.000 description 4
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- 229910052782 aluminium Inorganic materials 0.000 description 3
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- 239000010937 tungsten Substances 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
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- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
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- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
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- 239000007795 chemical reaction product Substances 0.000 description 1
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- 238000002955 isolation Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
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- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Abstract
The present disclosure proposes a kind of thin film bulk acoustic wave resonator and preparation method thereof, filter；The thin film bulk acoustic wave resonator includes: substrate；The piezo-electric stack structure being formed on the substrate, the piezo-electric stack structure include hearth electrode, piezoelectric film and top electrode；And it is formed in the first pad and the second pad in the piezo-electric stack structure；Wherein, the thin film bulk acoustic wave resonator further includes dielectric layer, the dielectric layer is formed in the Reticule series of the piezoelectric film, and/or it is formed in the Reticule series of the piezoelectric film and hearth electrode, and/or the Reticule series of the piezoelectric film and top electrode are formed in, and/or be formed in the Reticule series of the piezoelectric film, top electrode and hearth electrode.Disclosure thin film bulk acoustic wave resonator and preparation method thereof, filter promote device performance, simplify production process, reduce the production cost.
Description
Technical field
The disclosure belongs to wireless communication technique field, relates more specifically to a kind of thin film bulk acoustic wave resonator and its production side
Method, filter.
Background technique
It is higher and higher for the rate requirement of data transmission with the development of mobile communication technology, the frequency band for communication
More and more, electromagnetic spectrum is more and more crowded.This aspect requires have more filter devices to guarantee each communication band
Between will not generate interference, on the other hand, it is desirable that the chips such as filter need lower loss, with guarantee number of chips not
The power consumption increase of end product is matched with the speedup of battery capacity in increased situation of breaking.
There are mainly two types of technologies at present for filter in mobile communication especially smart phone: surface acoustic wave techniques
(SAW:Surface Acoustic Wave) and bulk acoustic wave technologies (BAW:BulkAcoustic Wave).SAW filter is because of it
The advantages that structure and manufacturing process simple, at low cost, size is small, is widely used in 2G the and 3G epoch, but with 4G's
Universal and 5G propulsion, communication frequency constantly increase, SAW filter due to its working frequency and its interdigital electrode (IDT:
Interdigital Transducer) width be inversely proportional, when communication frequency is higher and higher, the width of IDT can be increasingly
Narrow, this aspect increases manufacture difficulty, and on the other hand, since IDT narrows, export license increases, the power capacity of device
It can reduce.Therefore, SAW technology is not suitable for the frequency band that high frequency is particularly greater than 3.5GHz.And the working frequency of BAW filter with
The thickness of its film layer is inversely proportional, therefore can work in higher frequency, studies have shown that BAW filter is in 1.5GHz~9GHz
It can satisfy the demand of mobile communication in range.
Thin film bulk acoustic wave resonator is the primary element for constituting BAW filter, and performance directly affects the property of BAW filter
Energy.Mainly there are air gap type and two kinds of solid-state assembly type using the film bulk acoustic wave device of BAW technology at present.
Existing thin film bulk acoustic wave resonator is primarily present following defect:
(1) hearth electrode, piezoelectric film, top electrode etc. are required to stepped depositions, and the processing steps such as photoetching, etching are passed through in centre,
It will lead to film surface appearance deterioration, the deposition quality of subsequent thin film influenced, to influence the performance of film bulk acoustic wave device.
(2) height is required to the etching of hearth electrode, needs to etch the end face of hearth electrode the slope for smaller angle, technique is difficult
Degree is big, and producing efficiency is low.
Summary of the invention
(1) technical problems to be solved
Present disclose provides a kind of thin film bulk acoustic wave resonator and preparation method thereof, filter, at least partly solve with
Upper existing technical problem.
(2) technical solution
According to one aspect of the disclosure, a kind of production method of thin film bulk acoustic wave resonator is provided, comprising:
It is continuously sequentially depositing hearth electrode, piezoelectric film on substrate；
Graphical piezoelectric film, hearth electrode described in exposed portion；
Graphical hearth electrode；
Metallization medium layer, and etch media layer；
Deposit top electrode, and graphical top electrode；And
Make pad.
A kind of production method of thin film bulk acoustic wave resonator another aspect of the present disclosure provides, comprising:
It is continuously sequentially depositing hearth electrode, piezoelectric film and top electrode on substrate；
Successively graphical top electrode, piezoelectric film and hearth electrode；
Metallization medium layer, and etch media layer；And
Make pad.
In some embodiments, under vacuum conditions, hearth electrode, piezoelectric film are continuously sequentially depositing using magnetron sputtering method；
Or hearth electrode, piezoelectric film and top electrode are continuously sequentially depositing using magnetron sputtering method；
Using spin coating or chemical vapor deposition dielectric layer；
Using whole face dry etch process etch media layer, retain the dielectric layer of piezoelectric film endface；Or using photoetching, quarter
Etching technique makes at least one endface of piezoelectric film retain dielectric layer.
In some embodiments, top electrode figure is gone out by a lithographic definition；
Top electrode, piezoelectric film are sequentially etched by dry etching or wet etching method；And
Pass through photoetching, the graphical hearth electrode of etching technics；
In the production pad the step of, two pads, the weight of one of two pads and top electrode are made
The width in folded region is greater than or equal to 1um.
In some embodiments, the production method, before depositions of bottom electrode, further includes: production sound on substrate
Reflector element；Wherein, the first pad is made on the top electrode, and the second pad is made on the hearth electrode；Described first
The width of the overlapping region of pad and the sound reflecting unit is greater than or equal to 0.1um.
According to one aspect of the disclosure, a kind of thin film bulk acoustic wave resonator is provided, comprising:
Substrate；
The piezo-electric stack structure being formed on the substrate, the piezo-electric stack structure include hearth electrode, piezoelectric film and top electricity
Pole；And
The first pad and the second pad being formed in the piezo-electric stack structure；
Wherein, the thin film bulk acoustic wave resonator further includes dielectric layer, and the dielectric layer is formed in the quarter of the piezoelectric film
End face is lost, and/or is formed in the Reticule series of the piezoelectric film and hearth electrode, and/or be formed in the piezoelectric film and top electrode
Reticule series, and/or be formed in the Reticule series of the piezoelectric film, top electrode and hearth electrode.
In some embodiments, the dielectric layer segments are formed in what the piezo-electric stack structure was surrounded with the substrate
In region, the top electrode includes at least three parts, and first part is located on the substrate, and second part is located at the medium
On layer, Part III is located on the piezoelectric film, and second part connects the first part and Part III；Or
The dielectric layer segments are formed in the area that first pad, the piezo-electric stack structure and the substrate are surrounded
In domain, the top electrode is located on the piezoelectric film.
In some embodiments, the dielectric layer segments are formed in what the piezo-electric stack structure was surrounded with the substrate
In region, the thin film bulk acoustic wave resonator further includes sound reflecting unit over the substrate, and first pad is formed in
On the top electrode, it is greater than or equal to 0.1um with the width of the overlapping region of the sound reflecting unit.
In some embodiments, the dielectric layer segments are formed in first pad, the piezo-electric stack structure and institute
It states in substrate area defined, the width of the overlapping region of the first pad and top electrode is greater than or equal to 1um.
A kind of filter another aspect of the present disclosure provides comprising cascade multiple thin-film body sound
Wave resonator.
(3) beneficial effect
It can be seen from the above technical proposal that a kind of thin film bulk acoustic wave resonator of the disclosure and preparation method thereof, filter
At least have the advantages that one of them:
(1) by the way that it is roughening right in photoetching, etching to avoid hearth electrode surface by piezoelectric film and hearth electrode successive sedimentation
The deposition quality of subsequent piezoelectric film generates adverse effect.
(2) by reducing photoetching, etching technics to middle film layer for top electrode, piezoelectric film and hearth electrode successive sedimentation
The influence on surface promotes properties of product to improve film deposition quality.Meanwhile top electrode and the graphical of piezoelectric film can
To be realized by a step photoetching, reduces making step, reduce the production cost.
(3) thin film bulk acoustic wave resonator includes the dielectric layer of arc, is conducive to improve Step Coverage effect, realization has
Effect isolation；Dielectric layer first part is formed in the piezo-electric stack structure and the substrate area defined or is formed in institute
It states in the first pad, the piezo-electric stack structure and the substrate area defined；The second part of dielectric layer is formed in institute
It states between piezo-electric stack structure and second pad, it is thus discontinuous in resonator boundary formation acoustic impedance, it can be to cross
It is reflected to the energy of leakage, to promote the performance of bulk acoustic wave resonator.
Detailed description of the invention
Fig. 1 is one film bulk acoustic resonator structure schematic diagram of the embodiment of the present disclosure.
Fig. 2-9 is one thin film bulk acoustic wave resonator manufacturing process schematic diagram of the embodiment of the present disclosure.
Figure 10 is two film bulk acoustic resonator structure schematic diagram of the embodiment of the present disclosure.
Figure 11-17 is two thin film bulk acoustic wave resonator manufacturing process schematic diagram of the embodiment of the present disclosure.
Specific embodiment
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
The disclosure is further described in attached drawing.
Present disclose provides a kind of thin film bulk acoustic wave resonator, comprising:
Substrate；
The piezo-electric stack structure being formed on the substrate, the piezo-electric stack structure include hearth electrode, piezoelectric film and top electricity
Pole；And
The first pad and the second pad being formed in the piezo-electric stack structure；
Wherein, the thin film bulk acoustic wave resonator further includes dielectric layer, which is formed in the etching of the piezoelectric film
End face, and/or be formed in the Reticule series of the piezoelectric film and hearth electrode, and/or it is formed in the piezoelectric film and top electrode
Reticule series, and/or it is formed in the Reticule series of the piezoelectric film, top electrode and hearth electrode.
It is discontinuous in resonator boundary formation acoustic impedance as a result, the energy laterally revealed can be reflected, thus
Promote the performance of bulk acoustic wave resonator.
Specifically, the dielectric layer may include two parts: first part can be formed in the piezo-electric stack structure and institute
It states in substrate area defined, first pad, the piezo-electric stack structure and the substrate can also be formed in and surrounded
Region in；Second part can be formed between the piezo-electric stack structure and second pad.
More particularly, for disclosure thin film bulk acoustic wave resonator, the first part of the dielectric layer is formed in described
In piezo-electric stack structure and the substrate area defined；The top electrode may include at least three parts, first part position
In on the substrate, second part is located on the dielectric layer, and Part III is located on the piezoelectric film, and second part connects institute
State first part and Part III.Certainly, the thin film bulk acoustic wave resonator may also include sound reflecting list over the substrate
Member, first pad are formed on the top electrode, are greater than or equal to the width of the overlapping region of the sound reflecting unit
0.1um, thus be conducive to resonator edge formed acoustic impedance it is discontinuous, improve the Q value of resonator.
Alternatively, the first part of the dielectric layer is formed in first pad, the piezo-electric stack structure and the lining
In the area defined of bottom, the top electrode is located on the piezoelectric film.The width of the overlapping region of first pad and top electrode
More than or equal to 1um, to be conducive to reduction connection resistance, and formation boundary acoustic impedance is discontinuous, improves the Q of resonator
Value.
Preferably, the dielectric layer is arc-shaped, is conducive to improve Step Coverage effect, realization is effectively isolated.In addition, this public affairs
Opening thin film bulk acoustic wave resonator also includes optionally separation layer, to further increase the performance of thin film bulk acoustic wave resonator.
Present disclose provides also a kind of production methods of thin film bulk acoustic wave resonator, comprising:
It is continuously sequentially depositing hearth electrode, piezoelectric film on substrate；
Graphical piezoelectric film, hearth electrode described in exposed portion；
Graphical hearth electrode；
Metallization medium layer, and etch media layer；
Deposit top electrode, and graphical top electrode；And
Make pad.
The disclosure additionally provides the production method of another thin film bulk acoustic wave resonator, comprising:
It is continuously sequentially depositing hearth electrode, piezoelectric film and top electrode on substrate；
Successively graphical top electrode, piezoelectric film and hearth electrode；
Metallization medium layer, and etch media layer；And
Make pad.
Disclosure thin film bulk acoustic wave resonator and preparation method thereof is discussed in detail below with reference to embodiment one and embodiment two.
Embodiment one
As shown in Figure 1, the present embodiment thin film bulk acoustic wave resonator, comprising: substrate 1, sound reflecting unit 2, separation layer 3, bottom
Electrode 4, piezoelectric membrane 5, dielectric layer 6a, 6b, top electrode 7, pad 8a, 8b.
The sound reflecting unit 2 is formed on the substrate 1, and the surface of sound reflecting unit is flushed with the surface of substrate.Institute
Separation layer 3 is stated to be formed on the substrate and sound reflecting unit.The hearth electrode 4 is formed on the separation layer.The medium
Layer 6a is formed in the Reticule series of the piezoelectric film and hearth electrode, and dielectric layer 6b is formed in the Reticule series of the piezoelectric film.Institute
The first part for stating top electrode 7 is located on the separation layer, and second part is located on the dielectric layer 6a, and Part III is located at institute
It states on piezoelectric film, second part connects the first part and Part III.Institute pad 8a is formed in the first of the top electrode
On part and second part, the pad 8b is formed in the outside on the hearth electrode and being located at the dielectric layer 6b.
Wherein, the substrate can be silicon (Si), glass, sapphire (Sapphire), gallium nitride (GaN), GaAs
(GaGs), lithium niobate (LiNbO3), lithium tantalate (LiTaO3) etc..
The sound reflecting unit can be air chamber or be alternately stacked the cloth formed by the different material of high low acoustic impedance
Glug reflecting layer is constituted.
The separation layer can be silica (SiO2), silicon nitride (Si3N4), the insulating materials such as aluminium nitride (AlN).
The hearth electrode can be molybdenum (Mo), tungsten (W), chromium (Cr), aluminium (Al), copper (Cu), iridium (Ir), ruthenium (Ru), silicon
(Si), one of graphene (Graphene), carbon nanotube (Carbon Nanotube) or multiple combinations.
The piezoelectric membrane can be aluminium nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), or doped with dilute
The above-mentioned material of earth elements.
The dielectric layer can be silica (SiO2), silica glass (USG), phosphorosilicate glass (PSG), Pyrex (BSG),
The dielectric materials such as boro-phosphorus glass (BPSG), ethyl orthosilicate (TEOS)
The top electrode can be molybdenum (Mo), tungsten (W), chromium (Cr), aluminium (Al), copper (Cu), iridium (Ir), ruthenium (Ru), silicon
(Si), one of graphene (Graphene), carbon nanotube (Carbon Nanotube) or multiple combinations.
The pad can be in chromium (Cr), nickel (Ni), tungsten (W), titanium tungsten (TiW), aluminium (Al), copper (Cu), golden (Au)
One or more combinations.
As shown in figs. 2-9, the production process of the present embodiment thin film bulk acoustic wave resonator is specific as follows:
S1 makes sound reflecting unit on substrate, shown referring to figure 2..Optionally, groove is formed using etched substrate,
Then method that filling expendable material polishes makes sound reflecting unit on substrate.
S2 is sequentially depositing separation layer, hearth electrode, piezoelectric film, deposits for example, by using magnetron sputtering method, wherein deposition is intermediate
Not vacuum breaker, after completing thin film deposition, substrate passes into lower thin film deposition chamber under high vacuum environment to be continued
Deposition, until the deposition of separation layer, hearth electrode and piezoelectric film is completed, it is shown referring to figure 3..
S3, graphical piezoelectric film, exposed portion hearth electrode are shown referring to figure 4..Optionally, using photoetching, dry etching
Or wet etching method etches piezoelectric film.
S4, graphical hearth electrode are shown referring to figure 5..Optionally, using photoetching, dry etching or wet etching method.
S5, metallization medium layer please refer to shown in Fig. 6.Optionally, it is deposited using the method for spin coating or chemical vapor deposition
Dielectric layer since piezoelectric film endface step is higher, therefore can deposit the dielectric material thicker compared with other regions in endface.
S6, etch media layer are made other than piezoelectric film endface dielectric layer has residue by control etching condition, other
Position dielectric layer is moved out of.Typically, which uses whole face dry etch process, without photoetching process, due to pressure
Electrolemma endface dielectric thickness is most thick, by accurately controlling etch period, realizes and only retains dielectric layer in piezoelectric film endface, ask
Referring to shown in Fig. 7.
S7, deposition and graphical top electrode, please refer to shown in Fig. 8.Optionally, using photoetching, etching technics.
S8 makes pad, wherein please refer to shown in Fig. 9, the pad connecting with top electrode extends in sound reflecting unit
Portion, and it is Chong Die with the formation of sound emission unit, and overlapping region width is greater than or equal to 0.1um, to be conducive in resonator edge
It is discontinuous to form acoustic impedance, improves the Q value of resonator.
Embodiment two
As shown in Figure 10, the present embodiment thin film bulk acoustic wave resonator, comprising: substrate 1, sound reflecting unit 2, separation layer 3, bottom
Electrode 4, piezoelectric membrane 5, dielectric layer 6a, 6b, top electrode 7, pad 8a, 8b.
The sound reflecting unit 2 is formed on the substrate 1, and the surface of sound reflecting unit is flushed with the surface of substrate.Institute
Separation layer 3 is stated to be formed on the substrate and sound reflecting unit.The hearth electrode 4 is formed on the separation layer.The medium
Layer 6a is formed in the Reticule series of the top electrode, piezoelectric film and hearth electrode, and dielectric layer 6b is formed in the top electrode and piezoelectricity
The Reticule series of film.The top electrode 7 is located on the piezoelectric film.The first part of institute pad 8a is formed in the separation layer
On, second part is formed on the dielectric layer 6a, and Part III is formed on the top electrode, and the second part connects institute
State first part and Part III.The pad 8b is formed in the outside on the hearth electrode and being located at the dielectric layer 6b.
Wherein, layers of material can be the same as example 1, what is different from the first embodiment is that in two production process of embodiment,
Successive sedimentation is completed under the conditions of not vacuum breaker for separation layer, hearth electrode, piezoelectric film, top electrode, then utilizes same photoetching
Mask plate, while etching away top electrode and piezoelectric film.
As shown in figures 11-17, the production process of the present embodiment thin film bulk acoustic wave resonator is specific as follows:
S1 makes sound reflecting unit, please refers to shown in Figure 11.Optionally, groove is formed using etched substrate, filling is sacrificed
Then method that material polishes makes sound reflecting unit.
S2 is sequentially depositing separation layer, hearth electrode, piezoelectric film and top electrode, deposits for example, by using magnetron sputtering method, wherein
The intermediate not vacuum breaker of deposition, after completing thin film deposition, substrate passes into lower thin film deposition under high vacuum environment
Cavity continues to deposit, until completing the deposition of separation layer, hearth electrode, piezoelectric film and top electrode, please refers to shown in Figure 12.
S3, successively graphical top electrode, piezoelectric film typically go out top electrode figure by a lithographic definition, by dry
Method etching or wet etching method etch the shape to form top electrode, then utilize the mask of top electrode, utilize dry or wet
Lithographic method etches piezoelectric film, please refers to shown in Figure 13.
S4, graphical hearth electrode, please refers to shown in Figure 14.Optionally, using photoetching, the graphical hearth electrode of etching technics.
S5, metallization medium layer, for example, by using spin coating or the method metallization medium layer of chemical vapor deposition, due to piezoelectric film
Endface step is higher, therefore the dielectric material thicker compared with other regions can be deposited in endface, please refers to shown in Figure 15.
S6, etch media layer are made other than piezoelectric film endface dielectric layer has residue by control etching condition, other
Position dielectric layer is moved out of.Typically, which uses whole face dry etch process, without photoetching process, due to pressure
Electrolemma endface dielectric thickness is most thick, by accurately controlling etch period, realizes and only retains dielectric layer in piezoelectric film endface, ask
Referring to Fig.1 shown in 6.
S7 makes pad, wherein please refer to shown in Figure 17, the overlapping widths of the pad and top electrode that connect with top electrode
More than or equal to 1um, to be conducive to reduction connection resistance, and formation boundary acoustic impedance is discontinuous, improves the Q of resonator
Value.
In addition, the disclosure additionally provides a kind of filter comprising cascade multiple thin film bulk acoustic wave resonator.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects
Describe in detail it is bright, it is all it should be understood that be not limited to the disclosure the foregoing is merely the specific embodiment of the disclosure
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure
Within the scope of shield.
So far, attached drawing is had been combined the embodiment of the present disclosure is described in detail.According to above description, art technology
Personnel should have clear understanding to the disclosure.
It should be noted that in attached drawing or specification text, the implementation for not being painted or describing is affiliated technology
Form known to a person of ordinary skill in the art, is not described in detail in field.In addition, the above-mentioned definition to each element and method is simultaneously
It is not limited only to various specific structures, shape or the mode mentioned in embodiment, those of ordinary skill in the art can carry out letter to it
It singly changes or replaces.
(1) disclosure can also include passivation layer, and passivation layer be covered on top electrode not by all areas of contact pads, with
And all areas that hearth electrode is not covered by pad and piezoelectric film.
(2) disclosure can also not use separation layer.
(3) disclosure dielectric layer can also be moved out of in subsequent etching, and Air Interface is formed around piezoelectric film.
Certainly, according to actual needs, the step of method of disclosure also includes other, due to the same disclosure innovation without
It closes, details are not described herein again.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects
Describe in detail bright, it should be understood that the foregoing is merely the specific embodiment of the disclosure, be not limited to the disclosure, it is all
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the protection of the disclosure
Within the scope of.
Claims (10)
1. a kind of production method of thin film bulk acoustic wave resonator, comprising:
It is continuously sequentially depositing hearth electrode, piezoelectric film on substrate；
Graphical piezoelectric film, hearth electrode described in exposed portion；
Graphical hearth electrode；
Metallization medium layer, and etch media layer；
Deposit top electrode, and graphical top electrode；And
Make pad.
2. a kind of production method of thin film bulk acoustic wave resonator, comprising:
It is continuously sequentially depositing hearth electrode, piezoelectric film and top electrode on substrate；
Successively graphical top electrode, piezoelectric film and hearth electrode；
Metallization medium layer, and etch media layer；And
Make pad.
3. production method according to claim 1 or 2, wherein
Under vacuum conditions, hearth electrode, piezoelectric film are continuously sequentially depositing using magnetron sputtering method；Or it is continuous using magnetron sputtering method
It is sequentially depositing hearth electrode, piezoelectric film and top electrode；
Using spin coating or chemical vapor deposition dielectric layer；
Using whole face dry etch process etch media layer, retain the dielectric layer of piezoelectric film endface；Or using photoetching, etching work
Skill makes at least one endface of piezoelectric film retain dielectric layer.
4. production method according to claim 2, wherein
Go out top electrode figure by a lithographic definition；
Top electrode, piezoelectric film are sequentially etched by dry etching or wet etching method；And
Pass through photoetching, the graphical hearth electrode of etching technics；
In the production pad the step of, two pads, the overlay region of one of two pads and top electrode are made
The width in domain is greater than or equal to 1um.
5. manufacturing method according to claim 1, before depositions of bottom electrode, further includes: make sound reflecting on substrate
Unit；Wherein, the first pad is made on the top electrode, and the second pad is made on the hearth electrode；First pad
It is greater than or equal to 0.1um with the width of the overlapping region of the sound reflecting unit.
6. a kind of thin film bulk acoustic wave resonator, comprising:
Substrate；
The piezo-electric stack structure being formed on the substrate, the piezo-electric stack structure include hearth electrode, piezoelectric film and top electrode；With
And
The first pad and the second pad being formed in the piezo-electric stack structure；
Wherein, the thin film bulk acoustic wave resonator further includes dielectric layer, and the dielectric layer is formed in the etched ends of the piezoelectric film
Face, and/or the Reticule series of the piezoelectric film and hearth electrode are formed in, and/or be formed in the quarter of the piezoelectric film and top electrode
End face is lost, and/or is formed in the Reticule series of the piezoelectric film, top electrode and hearth electrode.
7. thin film bulk acoustic wave resonator according to claim 6, wherein
The dielectric layer segments are formed in the piezo-electric stack structure and the substrate area defined, the top electrode packet
At least three parts are included, first part is located on the substrate, and second part is located on the dielectric layer, and Part III is located at institute
It states on piezoelectric film, second part connects the first part and Part III；Or
The dielectric layer segments are formed in first pad, the piezo-electric stack structure and the substrate area defined
Interior, the top electrode is located on the piezoelectric film.
8. thin film bulk acoustic wave resonator according to claim 7, wherein
The dielectric layer segments are formed in the piezo-electric stack structure and the substrate area defined, the thin-film body sound
Wave resonator further includes sound reflecting unit over the substrate, and first pad is formed on the top electrode, and described
The width of the overlapping region of sound reflecting unit is greater than or equal to 0.1um.
9. thin film bulk acoustic wave resonator according to claim 7, wherein the dielectric layer segments are formed in first weldering
In disk, the piezo-electric stack structure and the substrate area defined, the width of the overlapping region of the first pad and top electrode
More than or equal to 1um.
10. a kind of filter comprising cascade multiple thin film bulk acoustic wave resonator as described in any one of claim 6-9.
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