CN111082775B - Film bulk acoustic resonator with high quality factor - Google Patents
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- 239000010408 film Substances 0.000 claims abstract description 73
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 17
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 4
- 239000000725 suspension Substances 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 42
- 238000010586 diagram Methods 0.000 description 10
- 238000011056 performance test Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
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- 230000000644 propagated effect Effects 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
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Abstract
The invention relates to a film bulk acoustic resonator with high quality factor, which comprises a substrate 1 with a groove 2 on the upper surface, a bottom electrode layer 3 positioned above the substrate 1, a piezoelectric layer 4 and a top electrode layer 5 with an air bridge structure 6, and is characterized in that an acoustic rebound structure 7 which can play a role in rebounding transverse acoustic waves and improve the quality factor of the film bulk acoustic resonator is arranged in the air bridge structure 6; the acoustic resilience structure 7 is made of a thin film medium; the acoustic resilience structure 7 is horizontally arranged above a bridge cavity in the air bridge structure 6, an air gap 8 is reserved between the bottom end face of the resilience structure 7 and a suspension structure below the bridge cavity of the air bridge structure 6, the top end face of the acoustic resilience structure 7 is tightly attached to the overhead top face of the bridge cavity of the air bridge structure 6, and the left side face and the right side face of the acoustic resilience structure 7 are tightly attached to the inner side faces adjacent to a bridge cavity supporting structure of the air bridge structure 6 respectively. The invention can obviously improve the quality factor of the film bulk acoustic resonator.
Description
Technical Field
The invention relates to a film bulk acoustic wave device, in particular to a film bulk acoustic wave resonator with high quality factor.
Background
With the development of wireless communication technology and smart phones, the requirements of the radio frequency front end on the performance index and the integration level of components are higher and higher. The radio frequency front-end filter, the duplexer and the multiplexer based on the film bulk acoustic wave device have been widely used in smart phones, communication terminals and communication base stations due to the advantages of small size, low insertion loss, fast roll-off, low power consumption and the like, and are applied to communication equipment of internet of things terminals such as internet of vehicles and industrial control in the future. In addition, the oscillator based on the film bulk acoustic wave device has great application value in high-speed serial data equipment such as SATA hard disk drives, USB3.0 standard PC peripherals, C-type interfaces, optical transceivers and the like.
A typical thin film bulk acoustic resonator includes an acoustic rebound layer located over a substrate, a bottom electrode layer located over the acoustic rebound layer, a piezoelectric layer located over the bottom electrode layer, and a top electrode layer located over the piezoelectric layer. Two common configurations of acoustically resilient layers are, respectively, an air cavity structure or a multi-layer composite structure of overlapping high and low acoustic impedance layers. The conventional method for forming the air cavity structure is to deposit a layer of sacrificial material, and release the sacrificial material after processing other layers of the device, so that the remaining space can form a cavity.
When alternating voltage is applied to the upper electrode and the lower electrode of the film bulk acoustic resonator, the piezoelectric layer film can generate longitudinal deformation under the action of an external electric field, and bulk acoustic waves which are longitudinally propagated and vibrated are generated. The bulk acoustic wave is rebounded back on the upper and lower surfaces of the film bulk acoustic resonator to form a standing wave in the piezoelectric layer, so that resonance is generated. The acoustic resonance forms a measurable electric signal between the upper and lower electrode layers, namely a resonance electric signal of the bulk acoustic wave resonator, through the piezoelectric effect of the piezoelectric layer film. The signal contains information on the resonance frequency, amplitude, phase, etc. In addition, in order to improve the surface oxidation resistance, power tolerance, mechanical strength, frequency and temperature stability and other performances of the film bulk acoustic resonator, an additional material layer and structure can be added on the basis of the basic structure.
The arrangement of the air bridge structure in the laminated structure of the film bulk acoustic resonator, especially at the boundary of the overlapping region of the bottom acoustic reflection cavity and the upper and lower electrode layers, is beneficial to reducing the leakage of acoustic energy to the substrate, thereby improving the quality factor of the resonator, see US20140225683a 1. However, in this solution, a part of the acoustic energy may leak to the external area through the air bridge structure, and the quality factor of the resonator is still greatly damaged. Therefore, how to overcome the defects of the prior art has become one of the key problems to be solved urgently in the technical field of the thin film bulk acoustic wave device.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide the film bulk acoustic resonator with high quality factor.
The film bulk acoustic resonator with the high quality factor comprises a substrate with a groove on the upper surface, a bottom electrode layer positioned above the substrate, a piezoelectric layer and a top electrode layer with an air bridge structure, and is characterized in that the air bridge structure is internally provided with an acoustic rebound structure which can play a role in rebounding transverse acoustic waves and improve the quality factor of the film bulk acoustic resonator; the boundary of one direction of the air bridge structure is positioned in the groove, and the boundary of the other direction of the air bridge structure extends out of the boundary of the groove; the acoustic resilience structure is tightly attached to the air bridge structure to form an acoustic impedance mismatching interface in the horizontal propagation direction; the material of the acoustic resilience structure is a film medium; the acoustic resilience structure is attached to the air bridge structure, the acoustic resilience structure is horizontally arranged above a bridge cavity in the air bridge structure, an air gap is reserved between the bottom end face of the resilience structure and a suspension structure below the bridge cavity of the air bridge structure, the top end face of the acoustic resilience structure is attached to the overhead top face of the bridge cavity of the air bridge structure, and the left side face and the right side face of the acoustic resilience structure are respectively attached to the inner side faces adjacent to the bridge cavity supporting structure of the air bridge structure. Compared with the prior art, the invention has the remarkable advantages that:
firstly, the film bulk acoustic resonator with high quality factor of the invention applies a horizontal acoustic rebound structure in the air bridge structure, the acoustic rebound structure forms an additional acoustic impedance interval in the horizontal direction of the air bridge structure, and the acoustic impedances in different intervals are different due to the introduction of the horizontal acoustic rebound structure, so that the rebound effect is generated on the acoustic waves which are transmitted in the horizontal direction of the air bridge structure, the transmission and leakage of the acoustic waves to the areas outside the air bridge structure are greatly reduced, and the quality factor of the film bulk acoustic resonator is remarkably improved.
Secondly, the product of the thickness of the acoustic resilience structure and the acoustic impedance of the material of the film bulk acoustic resonator with high quality factor is larger than the product of the thickness of the air bridge structure and the acoustic impedance of the material of the film bulk acoustic resonator, and the acoustic energy exposed through the air bridge structure is reduced to be within 33 percent of the original acoustic energy.
Thirdly, the material of the acoustic rebound structure of the film bulk acoustic resonator with high quality factor is determined to be a film medium formed by combining SiC and perovskite or a film medium formed by combining SiN and perovskite, and the film medium has low loss, high Q value and good piezoelectricity.
Drawings
Fig. 1A is a schematic diagram of a basic structure of a film bulk acoustic resonator.
FIG. 1B is a schematic diagram of the acoustic impedance of the basic structure of the film bulk acoustic resonator shown in FIG. 1A.
Fig. 2A is a schematic diagram of a basic structure of a film bulk acoustic resonator with a high q factor according to the present invention.
FIG. 2B is a schematic diagram of the acoustic impedance of the basic structure of the film bulk acoustic resonator with high Q-factor shown in FIG. 2A.
Fig. 3 is a schematic diagram of performance test parameters of a film bulk acoustic resonator without an air bridge structure.
Fig. 4 is a schematic diagram of performance test parameters of a film bulk acoustic resonator provided with an air bridge structure.
Fig. 5 is a schematic diagram of performance testing parameters of a film bulk acoustic resonator with a high quality factor according to the present invention.
The A, B or C symbol in the drawings represents acoustic impedance, the definition of which is explained below:
and A is the acoustic impedance of a two-layer composite structure formed by the top electrode layer 5 and the partial surface of the piezoelectric layer 4.
B is the acoustic impedance of the air bridge structure 6 single layer structure.
And C is the acoustic impedance of a three-layer composite structure consisting of the air bridge structure 6, the acoustic rebound structure 7 and part of the surface of the piezoelectric layer 4.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples.
With reference to fig. 1A and 1B, a basic structure of a film bulk acoustic resonator includes a top electrode layer 5 having an air bridge structure 6, and in a path of an acoustic wave in the top electrode layer 5 propagating outward from a central region of a bridge cavity, the acoustic wave propagates from an acoustic impedance a to an acoustic impedance B of the air bridge structure 6, and then propagates to an acoustic impedance a region outside the film bulk acoustic resonator. In the path of the acoustic wave propagation, the acoustic impedance value, the thickness, and the structure of the material of the top electrode layer 5 as the propagation medium and the piezoelectric layer 4 adjacent to the propagation medium affect the acoustic impedance in the propagation structure. The method comprises the following steps: the propagation structure of the bridge cavity suspension area of the air bridge structure 6 is a top electrode layer 5 and a piezoelectric layer 4 positioned below the top electrode layer 5, and the impedance value in the structure is defined as A; when sound waves are transmitted into the air bridge structure 6 from the top electrode layer 5, the acoustic impedance of the air bridge structure 6 is only formed by the top electrode layer 5, and the acoustic impedance value is defined as B; therefore, an impedance mismatching interface is formed at the junction S1 between the air bridge structure 6 and the suspension area of the bridge cavity, the sound wave can form rebound in the horizontal direction on the interface, and part of the energy which originally enters the air bridge structure 6 can be rebounded to the suspension effective resonance area of the bridge cavity, so that the quality factor of the film bulk acoustic resonator can be increased. Similarly, at the interface S2 where the acoustic wave is transmitted from the air bridge structure 6 to the peripheral region, the acoustic wave will rebound to the air bridge structure 6, reducing the energy transmission to the external region, so that the quality factor of the film bulk acoustic resonator will increase. However, a part of the acoustic wave energy in this basic structure scheme still leaks to the external area through the air bridge structure 6, which still has a large damage to the quality factor of the film bulk acoustic resonator.
Example 1. With reference to fig. 2A and fig. 2B, the basic structure of a film bulk acoustic resonator with a high quality factor according to the present invention includes a substrate 1 having a groove 2 on an upper surface thereof, a bottom electrode layer 3 located above the substrate 1, a piezoelectric layer 4, and a top electrode layer 5 having an air bridge structure 6, where an acoustic rebound structure 7 capable of playing a role of rebounding a transverse acoustic wave and improving the quality factor of the film bulk acoustic resonator is disposed in the air bridge structure 6; the boundary of one direction of the air bridge structure 6 is positioned in the groove 2, and the boundary of the other direction extends out of the boundary of the groove 2; the acoustic resilience structure 7 is tightly attached to the air bridge structure 6 to form an acoustic impedance mismatching interface in the horizontal propagation direction; the acoustic resilience structure 7 is made of a thin film medium; the acoustic resilience structure 7 is tightly attached to the air bridge structure 6, namely, the acoustic resilience structure 7 is horizontally arranged above a bridge cavity in the air bridge structure 6, an air gap 8 is reserved between the bottom end face of the resilience structure 7 and a suspension structure below the bridge cavity of the air bridge structure 6, the top end face of the acoustic resilience structure 7 is tightly attached to the overhead top face of the bridge cavity of the air bridge structure 6, and the left side face and the right side face of the acoustic resilience structure 7 are tightly attached to inner side faces adjacent to a bridge cavity supporting structure of the air bridge structure 6 respectively. A further preferable scheme of the film bulk acoustic resonator with a high quality factor provided in embodiment 1 of the present invention is:
the thin film medium is a thin film medium formed by combining SiC and perovskite or a thin film medium formed by combining SiN and perovskite.
The mass ratio of SiC to perovskite in the thin film medium is 4: 1.
The mass ratio of SiN to perovskite in the thin film medium is 4: 1.
The film medium formed by combining SiC and perovskite is doped with one or two of rare earth elements ytterbium (Yb) and europium (Eu).
The film medium formed by the combination of SiN and perovskite is doped with one or two of rare earth elements ytterbium (Yb) and europium (Eu).
The material of the piezoelectric layer 4 is the same as that of the acoustic rebound structure 7.
The bridge chamber height of air bridge structure 6 is 10nm to 2um (if select 10nm, 50nm, 150nm, 200nm, 300nm, 1um, 2um etc.), the bridge chamber width of air bridge structure 6 is 1um to 15um (if select 1um, 5um, 8um, 10um, 15um etc.).
The product of the thickness of the acoustic rebound structure 7 and the acoustic impedance of the material of the acoustic rebound structure is larger than the product of the thickness of the air bridge structure 6 and the acoustic impedance of the material of the air bridge structure. Wherein: the thickness of the acoustically resilient structure 7 is: the thickness of the thin film medium constituting the acoustic rebound structure 7, i.e., the distance from the uppermost surface to the lowermost surface thereof.
The air bridge structure 6 is shaped directly from the top electrode layer 5.
The implementation principle and the beneficial effects of the embodiment 1 of the invention are as follows: in the basic structure scheme of the present invention, with reference to fig. 2A and 2B, the top electrode layer 5 with the air bridge structure 6 further includes an acoustic rebound structure 7 attached to the piezoelectric layer 4, where two ends of the acoustic rebound structure 7 are attached to the support structures on two sides of the air bridge structure 6, but an air gap is still left between the two support structures and the central suspended structure of the air bridge structure 6. Due to the introduction of the acoustic rebound structure 7, a region with acoustic impedance different from A, B is generated above the air bridge structure 6, the acoustic impedance value is defined as C, and two impedance discontinuity boundaries S31 and S41 are further divided on the basis of the two boundaries S11/S21; when the sound wave propagates to the boundary at S31 and S41, acoustic rebound occurs. Compared with the basic structure shown in fig. 1A and 1B, the basic structure scheme of the present invention has the advantage that the acoustic wave energy is more rebounded to the central effective resonance area, so that the quality factor of the film bulk acoustic resonator is increased. For example, when the product of the thickness of the acoustic rebound structure 7 and the acoustic impedance of the material thereof is greater than the product of the thickness of the air bridge structure 6 and the acoustic impedance of the material thereof, the acoustic energy leaking through the air bridge structure 6 is reduced to within 33% of the original energy.
The effect of suppressing the lateral leakage of acoustic energy on the improvement of the Q value is further analyzed in principle below.
The Q value of the film bulk acoustic resonator is the reciprocal of the total energy percentage of the acoustic wave energy leakage. For example, before the air bridge structure 6 is not provided, about 1/2000 acoustic wave energy leaks to the substrate 1, about 1/2000 acoustic wave energy leaks laterally outward from the edge of the top electrode 5, and the sum of the two is about 1/1000 acoustic wave energy, so that the Q value of the thin film bulk acoustic resonator without the air bridge structure 6 is about 1000.
After the air bridge structure 6 of the film bulk acoustic resonator shown in fig. 1A and 1B is provided, the energy leaked laterally from the edge of the top electrode 5 is reduced to about 1/2, i.e. about 1/4000 acoustic wave energy, so that the total leaked acoustic wave energy is about 1/4000+1/2000=1/1333, and therefore the Q value of the film bulk acoustic resonator shown in fig. 1A and 1B is about 1333, which is increased by about 333 and by more than 30% compared with the film bulk acoustic resonator without the air bridge structure 6.
After the acoustic rebound structure 7 of the present invention shown in fig. 2A and 2B is provided, the energy leaked laterally from the edge of the top electrode 5 is reduced to about 1/3, i.e. about 1/6000 acoustic wave energy, so that the total acoustic wave energy leaked is about 1/6000+1/2000=1/1500, and therefore the Q value of the film bulk acoustic wave resonator shown in fig. 2A and 2B is about 1500, which is improved by about 500 and 50% compared with the film bulk acoustic wave resonator without the air bridge structure 6.
Example 2. Taking a specific 2.6GHz film bulk acoustic resonator as an example, the practical effect of the invention on improving the Q value of the film bulk acoustic resonator is verified and analyzed through a simulation design result by using the above-mentioned structural embodiment 1.
Fig. 3 is a schematic diagram of performance test parameters of a film bulk acoustic resonator without an air bridge structure. Fig. 4 is a schematic diagram of performance test parameters of a film bulk acoustic resonator provided with an air bridge structure. Fig. 5 is a schematic diagram of performance test parameters of embodiment 1 of the film bulk acoustic resonator with a high quality factor according to the present invention. In the simulation design result of the film bulk acoustic resonator without the air bridge structure shown in fig. 3, the Q value of the film bulk acoustic resonator is 1065.762; fig. 4 shows that the Q value of the film bulk acoustic resonator with the structure shown in fig. 1A and 1B is 1430.836, which is improved by 34%; fig. 5 shows that the Q value of the film bulk acoustic resonator with high quality factor is 1685.933, which is 58% higher, with the structure shown in fig. 2A and 2B. Compared with the performance test parameters in the prior art, the acoustic rebound structure 7 is arranged to form an additional acoustic impedance mismatching interface in the horizontal direction, so that the transverse acoustic wave transmitted through the air bridge structure is rebounded, and the quality factor of the film bulk acoustic wave resonator can be obviously improved.
Descriptions not related to the embodiments of the present invention are well known in the art, and may be implemented by referring to the well-known techniques.
The invention obtains satisfactory performance improvement effect through simulation test verification.
The above embodiments and examples are specific supports for the technical idea of the film bulk acoustic resonator with high quality factor, and the protection scope of the present invention is not limited thereby, and any equivalent changes or equivalent modifications made on the basis of the technical scheme according to the technical idea of the present invention still belong to the protection scope of the technical scheme of the present invention.
Claims (10)
1. A film bulk acoustic resonator with a high quality factor comprises a substrate (1) with a groove (2) on the upper surface, a bottom electrode layer (3) positioned above the substrate (1), a piezoelectric layer (4) and a top electrode layer (5) with an air bridge structure (6), and is characterized in that an acoustic rebound structure (7) which can play a role in rebounding transverse acoustic waves and improve the quality factor of the film bulk acoustic resonator is arranged in the air bridge structure (6); the boundary of one direction of the air bridge structure (6) is positioned inside the groove (2), and the boundary of the other direction extends out of the boundary of the groove (2); the acoustic resilience structure (7) is tightly attached to the air bridge structure (6) to form an acoustic impedance mismatching interface in the horizontal propagation direction; the material of the acoustic rebound structure (7) is a film medium; the acoustic resilience structure (7) is tightly attached to the air bridge structure (6), the acoustic resilience structure (7) is horizontally arranged on the upper area of a bridge cavity in the air bridge structure (6), an air gap (8) is reserved between the bottom end face of the acoustic resilience structure (7) and the piezoelectric layer (4) on the lower area of the bridge cavity of the air bridge structure (6), the top end face of the acoustic resilience structure (7) is tightly attached to the overhead surface of the bridge cavity of the air bridge structure (6), and the left side face and the right side face of the acoustic resilience structure (7) are tightly attached to the inner side faces adjacent to the bridge cavity supporting structure of the air bridge structure (6) respectively.
2. The high-q thin film bulk acoustic resonator according to claim 1, wherein the thin film dielectric is a thin film dielectric of SiC in combination with perovskite or a thin film dielectric of SiN in combination with perovskite.
3. The high-q film bulk acoustic resonator according to claim 2, wherein the mass ratio of SiC to perovskite in the film medium is 4: 1.
4. The high-q thin film bulk acoustic resonator according to claim 2, wherein the mass ratio of SiN to perovskite in the thin film dielectric is 4: 1.
5. The high-Q film bulk acoustic resonator of claim 2 or 3, wherein the film medium of the combination of SiC and perovskite is doped with one or two of the rare earth elements Yb (Yb) and Eu (Eu).
6. The high Q film bulk acoustic resonator of claim 2 or 4, wherein the thin film dielectric of the SiN and perovskite combination is doped with one or both of the rare earth elements Yb (Yb) and Eu (Eu).
7. A high quality factor film bulk acoustic resonator according to claim 1 or 2, characterized in that the piezoelectric layer (4) is made of the same material as the acoustically resilient structure (7).
8. The high-q film bulk acoustic resonator according to claim 7, wherein the height of the bridge cavity of the air bridge structure (6) is 10nm to 2um, and the width of the bridge cavity of the air bridge structure (6) is 1um to 15 um.
9. The film bulk acoustic resonator with high quality factor according to claim 8, wherein the product of the thickness of the acoustic rebound structure (7) and the acoustic impedance of the material of the acoustic rebound structure is larger than the product of the thickness of the air bridge structure (6) and the acoustic impedance of the material of the acoustic rebound structure.
10. A high-q film bulk acoustic resonator according to claim 9, characterized in that the air bridge structure (6) is shaped directly from the top electrode layer (5).
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| CN112260659B (en) * | 2020-10-26 | 2022-02-01 | 武汉大学 | high-Q-value film bulk acoustic resonator and preparation method thereof |
| CN114826191B (en) * | 2022-05-23 | 2023-11-07 | 武汉敏声新技术有限公司 | Film bulk acoustic resonator |
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| CN110166014A (en) * | 2018-02-11 | 2019-08-23 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator and its manufacturing method |
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