CN109639251A - Bulk acoustic wave resonator and preparation method thereof, filter - Google Patents
Bulk acoustic wave resonator and preparation method thereof, filter Download PDFInfo
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- CN109639251A CN109639251A CN201811502539.1A CN201811502539A CN109639251A CN 109639251 A CN109639251 A CN 109639251A CN 201811502539 A CN201811502539 A CN 201811502539A CN 109639251 A CN109639251 A CN 109639251A
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims description 25
- 230000000630 rising effect Effects 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000010409 thin film Substances 0.000 description 11
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 229910052681 coesite Inorganic materials 0.000 description 7
- 238000004891 communication Methods 0.000 description 7
- 229910052906 cristobalite Inorganic materials 0.000 description 7
- 229910052682 stishovite Inorganic materials 0.000 description 7
- 229910052905 tridymite Inorganic materials 0.000 description 7
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
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- 238000001228 spectrum Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
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- 229920002120 photoresistant polymer Polymers 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0407—Temperature coefficient
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The present disclosure proposes a kind of bulk acoustic wave resonators and preparation method thereof, filter；Wherein, the bulk acoustic wave resonator with temperature compensation characteristic includes: substrate；Air-gap type sound reflecting unit over the substrate；Piezo-electric stack structure on the sound reflecting unit；And；The pad in the piezo-electric stack structure；Wherein, the bulk acoustic wave resonator further includes Bragg reflection structure of the thickness Jing Guo special designing between the substrate and the piezo-electric stack structure, and/or on the piezo-electric stack structure.Disclosure bulk acoustic wave resonator and preparation method thereof, filter, improve temperature stability, effectively improve the performance of device.
Description
Technical field
The disclosure belongs to wireless communication technique field, and it is humorous to relate more specifically to a kind of bulk acoustic wave with temperature compensation characteristic
Shake device and preparation method thereof, filter.
Background technique
With the development of mobile communication technology, communication band is more and more, and frequency spectrum resource is more and more crowded.Especially
Universal 4G and the 5G communication standard newly promulgated, the forbidden band between adjacent communication frequency band is smaller and smaller, and this requires for communicating
Filter in equipment has precipitous roll-off characteristic from passband to neighbouring frequency band, and the working frequency of filter is with environment
The variation (frequency-temperature coefficient) of temperature needs minimum or even becomes cancellation.
Bulk accoustic wave filter quality factor with higher, can work in medium-high frequency, therefore in 4G communication and future
5G communication in will be widely used.Bulk acoustic wave resonator is the basic unit for constituting bulk accoustic wave filter.Bulk acoustic wave
Resonator is a kind of by a lamination electrolemma and to be clamped in the piezo-electric stack structure that the electrode of piezoelectric film two sides constitutes.In general, according to
The difference for the sound reflecting unit that bulk acoustic wave resonator uses, is divided into air-gap type and solid-state assembly type for bulk acoustic wave resonator,
Sound reflecting unit used by difference is is the air gap or Bragg reflection structure.Air-gap type bulk acoustic wave resonator due to
Its sound reflecting unit is the air gap, can be totally reflected to sound wave, therefore has higher quality factor and electromechanical coupling
Number.Due to constituting the common used material of bulk acoustic wave resonator, if the velocity of sound of aluminium nitride (AlN) can be lower as the temperature rises, and
The working frequency of bulk acoustic wave resonator and the equivalent sound short-term training direct ratio of piezo-electric stack structure.Therefore, the work of bulk acoustic wave resonator
Frequency would generally be lower as the temperature rises.The frequency-temperature coefficient of air-gap type thin film bulk acoustic wave resonator about-
25ppm/ DEG C, negative sign indicates that the working frequency of bulk acoustic wave resonator can decline as the temperature rises；Solid-state assembly type bulk acoustic wave
The frequency-temperature coefficient of resonator is about -17ppm/ DEG C, and traditional SAW resonator frequency-temperature coefficient is in -40ppm/
DEG C or less.Although the frequency-temperature coefficient of bulk acoustic wave resonator only has half of SAW resonator or so, for more next
More crowded communication spectrum, the application requirement filter of certain frequency ranges will not only have high quality factor and electromechanical coupling factor,
Frequency-temperature coefficient is also required to be less than +/- 5ppm/ DEG C or for 0.Therefore, traditional bulk acoustic wave device and the equal nothing of SAW device
Method meets this application demand.
Currently, being used to improve the method for air-gap type bulk acoustic wave resonator temperature coefficient mainly in bulk acoustic wave resonator
It is inserted between electrode and piezoelectric film or among piezoelectric film the material with positive temperature coefficient, such as silica (SiO2)。
Because air-gap type bulk acoustic wave resonator generally uses SiO2Or PSG makes the air gap as expendable material, and
SiO for temperature-compensating2It can be corroded together when discharging expendable material, even if with electrode or piezoelectric film by temperature-compensating
The SiO of layer2It is surrounded, when sacrificial layer release, still suffers from part SiO2Being corroded causes device performance to reduce or lose
Effect.
In addition, because the SiO of temperature compensating layer2Between electrode and piezoelectric film or among piezoelectric film, therefore the SiO2
Large effect can be generated to the resonance frequency of bulk acoustic wave resonator, electromechanical coupling factor, quality factor etc..Due to SiO2It is non-
Piezoelectric material introduces SiO2It will lead to the electromechanical coupling factor decline of the thin film bulk acoustic wave resonator of production.And SiO2The velocity of sound about
It is the 1/4 of common AlN piezoelectric film, the resonance frequency of bulk acoustic wave resonator is directly proportional to the velocity of sound of piezo-electric stack structure, with pressure
The thickness of pile stack structure is inversely proportional.Therefore, SiO is added2Afterwards, the frequency of thin film bulk acoustic wave resonator can sharply decline, in order to
Guarantee that frequency is constant, the thickness of electrode or piezoelectric film can only be reduced, this further causes the thin film bulk acoustic wave resonator of production
Electromechanical coupling factor and quality factor reduction.
Summary of the invention
(1) technical problems to be solved
Present disclose provides a kind of bulk acoustic wave resonator with temperature compensation characteristic and preparation method thereof, filter, with
At least partly solve the above existing technical problem.
(2) technical solution
According to one aspect of the disclosure, a kind of bulk acoustic wave resonator with temperature compensation characteristic is provided, comprising:
Substrate；
Air-gap type sound reflecting unit over the substrate；
Piezo-electric stack structure on the sound reflecting unit；And；
The pad in the piezo-electric stack structure；
Wherein, the bulk acoustic wave resonator further includes between the substrate and the piezo-electric stack structure, and/or described
Bragg reflection structure on piezo-electric stack structure.
In some embodiments, the Bragg reflection structure includes that an at least acoustic impedance layer is right, and the acoustic impedance layer is right
Including the first acoustic impedance layer and rising tone impedance layer, the first acoustic impedance layer is different from the acoustic impedance of the rising tone impedance layer.
In some embodiments, the piezo-electric stack structure include hearth electrode, top electrode and be located at the hearth electrode and
Piezoelectric film between top electrode；
The first Bragg reflection structure, first Prague are formed between the substrate and the piezo-electric stack structure
One rising tone impedance layer of catoptric arrangement is contacted with the piezoelectric film of the piezo-electric stack structure and hearth electrode, and first Prague is anti-
Penetrate the one first acoustic impedance layer and the substrate contact of structure；And/or
The second Bragg reflection structure is formed on the piezo-electric stack structure, the second Bragg reflection structure
One rising tone impedance layer is contacted with the top electrode of the piezo-electric stack structure, one first acoustic resistance of the second Bragg reflection structure
Anti- layer and the contact pads；
Wherein, the acoustic impedance of the first acoustic impedance layer is greater than the acoustic impedance of the rising tone impedance layer.
In some embodiments, the pad includes the first pad and the second pad；
First pad is on the hearth electrode or the first Bragg reflection structure；
Second pad is on the top electrode, and part covers the second Bragg reflection structure, part covers
The top electrode；Or second pad is on the top electrode, and part covers the top electrode.
In some embodiments, the piezoelectric film is formed with the first contact hole, and first pad connects via described first
Contact hole is contacted with the hearth electrode；Or
First acoustic impedance layer of the first Bragg reflection structure is formed using conductive material, and described first Prague is anti-
The rising tone impedance layer, the hearth electrode and the piezoelectric film for penetrating structure are formed with the first contact hole, first pad via
First contact hole is contacted with the first acoustic impedance layer of the first Bragg reflection structure；First pad and hearth electrode
Contact area be greater than or equal to first pad and the first acoustic impedance layer of the first Bragg reflection structure contact
Area.
In some embodiments, the second Bragg reflection structure is formed with the second contact hole, the second pad warp
It is contacted by second contact hole with the top electrode, the contact area of second pad and top electrode is less than or equal to described
The contact area of second pad and the first acoustic impedance layer.
In some embodiments, the first acoustic impedance layer with a thickness of the 1/4 of bulk acoustic wave resonator effective wavelength, it is described
The thickness of rising tone impedance layer is greater than the 1/4 of bulk acoustic wave resonator effective wavelength.
In some embodiments, the rising tone impedance layer has positive frequency temperature coefficient, material SiOX。
A kind of production of the bulk acoustic wave resonator with temperature compensation characteristic another aspect of the present disclosure provides
Method, comprising:
Substrate is provided；
Expendable material is formed over the substrate；
Piezo-electric stack structure is formed on the substrate for being formed with expendable material；And；
Pad is formed in the piezo-electric stack structure；And
Expendable material is discharged, sound reflecting chamber is formed, thus obtains air-gap type sound reflecting unit；
Wherein, the method also includes between the substrate and the piezo-electric stack structure, and/or the piezo-electric stack
Bragg reflection structure is formed in structure.
According to the another aspect of the disclosure, a kind of filter is provided comprising cascade multiple bulk acoustic waves are humorous
Shake device.
(3) beneficial effect
It can be seen from the above technical proposal that a kind of bulk acoustic wave resonator and its system with temperature compensation characteristic of the disclosure
Make method, filter at least has the advantages that one of them:
(1) disclosure bulk acoustic wave resonator is improved thin using cavity reflector element of making a sound in conjunction with Bragg reflection structure
The temperature stability of membrane body acoustic resonator effectively improves the performance of device.
It (2), on the one hand can be by most of energy due to being arranged temperature compensating layer in a pair of of Bragg reflection structure
It is reflected back in piezo-electric stack structure, avoids quality factor of the introducing to bulk acoustic wave resonator, the mechanical-electric coupling of temperature compensating layer
The influence of coefficient；On the other hand, the mode of resonance of the temperature compensating layer in Bragg reflection structure and bulk acoustic wave resonator
Difference, it is smaller on the influence of the resonance frequency of bulk acoustic wave resonator, therefore piezoelectric pile will not be led to because of the introducing of temperature compensating layer
The thickness of piezoelectric film and electrode reduces in stack structure, to influence the performance of bulk acoustic wave resonator.
(3) disclosure bulk acoustic resonator structure is used, sacrificial layer can be used organic material etc., be not necessarily limited to use
SiO2Or PSG material, to temperature compensating layer SiO when avoiding sacrificial layer releasexCorrosion, improve temperature compensating type thin-film body
The performance and manufacturing yield of acoustic resonator.
(4) setting of Bragg reflection structure is more flexible in the disclosure, and it is right to be not limited to multipair acoustic impedance layer, can also be
A pair of of acoustic impedance layer is right, and thickness is not limited to be all 1/4 wavelength.
Detailed description of the invention
Fig. 1 is one embodiment film bulk acoustic resonator structure schematic diagram of the disclosure.
Fig. 2 is another embodiment film bulk acoustic resonator structure schematic diagram of the disclosure.
Fig. 3 is the another embodiment film bulk acoustic resonator structure schematic diagram of the disclosure.
Fig. 4 is disclosure another embodiment film bulk acoustic resonator structure schematic diagram.
Fig. 5 is disclosure thin film bulk acoustic wave resonator production method flow chart.
<symbol description>
1- substrate；2- sound reflecting unit；3a, 7a- high acoustic impedance layer；3b, 7b- low acoustic impedance layer；4- hearth electrode；5- piezoelectricity
Film；6- top electrode；The first pad of 8a-；The second pad of 8b-.
Specific embodiment
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
The disclosure is further described in attached drawing.
The present disclosure proposes a kind of bulk acoustic wave resonators with temperature compensation characteristic, comprising:
Substrate；
Air-gap type sound reflecting unit over the substrate；
Piezo-electric stack structure on the sound reflecting unit；And；
The pad in the piezo-electric stack structure；
Wherein, the bulk acoustic wave resonator further includes between the substrate and the piezo-electric stack structure, and/or described
Bragg reflection structure on piezo-electric stack structure.
Disclosure thin film bulk acoustic wave resonator is improved using cavity reflector element of making a sound in conjunction with Bragg reflection structure
The temperature stability of thin film bulk acoustic wave resonator effectively improves the performance of device.
Specifically, the Bragg reflection structure can be located at the substrate and the piezo-electric stack structure hearth electrode it
Between, and/or the top electrode of the piezo-electric stack structure on.
Wherein, the Bragg reflection structure includes that an at least acoustic impedance layer is right, and the acoustic impedance layer is to including the first sound
Impedance layer and rising tone impedance layer, the first acoustic impedance layer are different from the acoustic impedance of the rising tone impedance layer.
The piezo-electric stack structure includes hearth electrode, top electrode and the piezoelectricity between the hearth electrode and top electrode
Film；
Further, the acoustic impedance of the first acoustic impedance layer is greater than the rising tone impedance layer (using positive frequency temperature
Coefficient material is formed, i.e. temperature compensating layer) acoustic impedance.First is formed between the substrate and the piezo-electric stack structure
Bragg reflection structure, a rising tone impedance layer of the first Bragg reflection structure and the piezoelectric film of the piezo-electric stack structure
And hearth electrode contact, the one first acoustic impedance layer and the substrate contact of the first Bragg reflection structure；And/or in the pressure
The second Bragg reflection structure is formed on pile stack structure, a rising tone impedance layer of the second Bragg reflection structure with
The top electrode of the piezo-electric stack structure contacts.
Due to being arranged temperature compensating layer in a pair of of Bragg reflection structure, on the one hand most of energy can be reflected
In back pressure pile stack structure, to avoid quality factor of the introducing to bulk acoustic wave resonator of temperature compensating layer, electromechanical coupling factor
Influence, on the other hand, the temperature compensating layer in Bragg reflection structure is different from the mode of resonance of bulk acoustic wave resonator,
It is smaller on the influence of the resonance frequency of bulk acoustic wave resonator, therefore piezo-electric stack structure will not be led to because of the introducing of temperature compensating layer
The thickness of middle piezoelectric film and electrode reduces, to influence the performance of bulk acoustic wave resonator.
In one embodiment, as shown in Figure 1, the bulk acoustic wave resonator includes:
Substrate 1；
Sound reflecting unit 2 on substrate；
The first Bragg reflection structure on sound reflecting unit 2, the first Bragg reflection structure include being located at sound
High acoustic impedance layer 3a on reflector element and one layer on the high acoustic impedance layer resistance in a low voice with positive frequency temperature coefficient
Anti- layer 3b；
Piezo-electric stack structure in Bragg reflection structure, which includes: with acoustic impedance
Hearth electrode 4, the top electrode 6 with acoustic impedance and the piezoelectric film between hearth electrode 4 and top electrode 65；
The second Bragg reflection structure in piezo-electric stack structure, the second Bragg reflection structure include being located at top
The low acoustic impedance layer 7b with positive frequency temperature coefficient above electrode and one layer of acoustic impedance on low acoustic impedance layer
Layer 7a；And
Pad, comprising: the first pad 8a being connect with the hearth electrode, and the second pad being connect with the top electrode
8b。
Preferably, the contact area of the second pad 8b and top electrode 6 is less than or equal to itself and the high acoustic impedance layer
The contact area of 7a.Thus, it is possible to guarantee coming into full contact with for the second pad and top electrode, reliability is promoted.
The sound reflecting unit can be a air gap, and specific forming process is as follows: first etching one on substrate
Then a groove fills sacrificial layer in groove, then flushes sacrificial layer upper surface with substrate surface by polishing, in piezoelectric pile
Stack structure removes sacrificial layer after completing, thus form the air gap below piezo-electric stack structure.The sacrificial layer material
SiO will not be corroded when using release2The material of class temperature compensating layer, such as photoresist, polyimides (Polyimide), Black
Diamond etc. avoids the decline of performance caused by temperature compensating layer in technical process is corroded or failure.
Described acoustic impedance layer material such as tungsten (W), molybdenum (Mo), ruthenium (Ru), iridium (Yi) etc., the low acoustic impedance layer (temperature
Compensation layer) material can be silica (SiOx), undoped SiOxOr the SiO of dopingx。
The thickness of the high acoustic impedance layer is set as the 1/4 of bulk acoustic wave resonator effective wavelength, by sound as much as possible
Wave energy is limited in piezo-electric stack structure；It is humorous that the thickness of the low acoustic impedance layer (temperature compensating layer) is set greater than bulk acoustic wave
The 1/4 of vibration device effective wavelength, for example 1/2 wavelength, 3/4 wavelength, 4/5 wavelength, 5/4 wavelength etc., to improve made bulk acoustic wave
The temperature coefficient of resonator makes the frequency variation with temperature of bulk acoustic wave resonator close to zero.
The present embodiment, on the one hand can be by most of energy since temperature compensating layer is arranged in a pair of of Bragg reflection structure
Amount is reflected back in piezo-electric stack structure, to avoid temperature compensating layer introducing to the quality factor of bulk acoustic wave resonator, electromechanical coupling
The influence of collaboration number, on the other hand, the resonant mode of temperature compensating layer and bulk acoustic wave resonator in Bragg reflection structure
Formula is different, smaller on the influence of the resonance frequency of bulk acoustic wave resonator, therefore will not lead to piezoelectricity because of the introducing of temperature compensating layer
The thickness of piezoelectric film and electrode reduces in stacked structure, to influence the performance of bulk acoustic wave resonator.
In another embodiment, as shown in Fig. 2, unlike previous embodiment, the institute of the first Bragg reflection structure
Stating high acoustic impedance layer 3a is conductive material, and the first pad 8a is electrically connected by temperature compensating layer 3b with high acoustic impedance layer 3a, to subtract
The connection resistance of small hearth electrode.The bottom surface of first pad 8a includes continuous three parts, first part and Part III surface
It flushes, and with second part there is a difference in height, first part and Part III to contact with the hearth electrode 4, second part
It is contacted with the high acoustic impedance layer 3a, the contact area of the first pad 8a and hearth electrode 4 is greater than or equal to itself and high acoustic impedance layer
The contact area of 3a.Thus, it is possible to guarantee coming into full contact with for the first pad and hearth electrode, reliability is promoted.
In another embodiment, unlike previous, the present embodiment is only in the sound reflecting unit and the hearth electrode
Between introduce the Bragg reflection structure for improving temperature stability.
Specifically, as shown in figure 3, the bulk acoustic wave resonator includes:
Substrate 1；
Sound reflecting unit 2 on substrate；
The first Bragg reflection structure on sound reflecting unit 2, the first Bragg reflection structure include to be located at sound
High acoustic impedance layer 3a on reflector element and one layer on the high acoustic impedance layer resistance in a low voice with positive frequency temperature coefficient
Anti- layer 3b；
Piezo-electric stack structure on Bragg reflection structure, which includes: having acoustic impedance
Hearth electrode 4, piezoelectric film 5, the top electrode 6 with acoustic impedance；And
Pad, comprising: the first pad 8a being connect with the hearth electrode, and the second pad being connect with the top electrode
8b。
In another embodiment, unlike previous embodiment, the present embodiment is only on the top of the piezo-electric stack structure
The Bragg reflection structure for improving temperature stability is introduced above electrode.
Specifically, as shown in figure 4, the bulk acoustic wave resonator includes:
Substrate 1；
Sound reflecting unit 2 on substrate；
Piezo-electric stack structure on sound reflecting unit 2, which includes: the bottom electricity with acoustic impedance
Pole 4, piezoelectric film 5, the top electrode 6 with acoustic impedance；
The second Bragg reflection structure on the piezo-electric stack structure, the second Bragg reflection structure include
The low acoustic impedance layer 7b with positive frequency temperature coefficient above top electrode and one layer of height on low acoustic impedance layer
Acoustic impedance layer 7a；And
Pad, comprising: the first pad 8a being connect with the hearth electrode, and the second pad being connect with the top electrode
8b。
The disclosure additionally provides a kind of production method of bulk acoustic wave resonator with temperature compensation characteristic, comprising:
Substrate is provided；
Expendable material is formed over the substrate；
Piezo-electric stack structure is formed on the substrate for being formed with expendable material；And；
Pad is formed in the piezo-electric stack structure；And
Expendable material is discharged, sound reflecting chamber is formed, thus obtains air-gap type sound reflecting unit；
Wherein, the method also includes between the substrate and the piezo-electric stack structure, and/or the piezo-electric stack
Bragg reflection structure is formed in structure.
The disclosure is introduced for making above-mentioned thin film bulk acoustic wave resonator shown in FIG. 1 below with temperature compensation characteristic
Bulk acoustic wave resonator production method.Fig. 5 is the production method flow chart of thin film bulk acoustic wave resonator shown in Fig. 1.Such as Fig. 5 institute
Show, the production method of the bulk acoustic wave resonator includes:
Substrate is provided；
It is formed with expendable material over the substrate；
The first Bragg reflection structure is formed on the substrate for being formed with expendable material；
Piezo-electric stack structure is formed in the first Bragg reflection structure；And；
The second Bragg reflection structure is formed in the piezo-electric stack structure；
Production pad: the is formed on the hearth electrode of the piezo-electric stack structure or in the first Bragg reflection structure
One pad；The second pad is formed on the top electrode of the piezo-electric stack structure；And
Expendable material is discharged, sound reflecting chamber is formed, obtains air-gap type sound reflecting unit.
In addition, the above-mentioned definition to each element and method is not limited in the various specific structures mentioned in embodiment, shape
Shape or mode, those of ordinary skill in the art simply can be changed or be replaced to it, such as:
(1) disclosure bulk acoustic wave resonator can also include according to actual needs separation layer, passivation layer, not influence this public affairs
The realization opened；
(2) disclosure bulk acoustic wave resonator can according to need including multiple Bragg reflection structures, and each Prague is anti-
Penetrating structure may include that multiple acoustic impedance layers are right.
In addition, the disclosure additionally provides a kind of filter comprising cascade multiple thin film bulk acoustic wave resonator.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects
Describe in detail it is bright, it is all it should be understood that be not limited to the disclosure the foregoing is merely the specific embodiment of the disclosure
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure
Within the scope of shield.
So far, attached drawing is had been combined the embodiment of the present disclosure is described in detail.According to above description, art technology
Personnel should have clear understanding to the disclosure.
It should be noted that in attached drawing or specification text, the implementation for not being painted or describing is affiliated technology
Form known to a person of ordinary skill in the art, is not described in detail in field.In addition, the above-mentioned definition to each element and method is simultaneously
It is not limited only to various specific structures, shape or the mode mentioned in embodiment, those of ordinary skill in the art can carry out letter to it
It singly changes or replaces.
Certainly, according to actual needs, the step of method of disclosure also includes other, due to the same disclosure innovation without
It closes, details are not described herein again.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects
Describe in detail bright, it should be understood that the foregoing is merely the specific embodiment of the disclosure, be not limited to the disclosure, it is all
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the protection of the disclosure
Within the scope of.
Claims (10)
1. a kind of bulk acoustic wave resonator with temperature compensation characteristic, comprising:
Substrate；
Air-gap type sound reflecting unit over the substrate；
Piezo-electric stack structure on the sound reflecting unit；And；
The pad in the piezo-electric stack structure；
Wherein, the bulk acoustic wave resonator further includes between the substrate and the piezo-electric stack structure, and/or the piezoelectricity
Bragg reflection structure on stacked structure.
2. bulk acoustic wave resonator according to claim 1, wherein the Bragg reflection structure includes an at least acoustic impedance
Layer is right, and the acoustic impedance layer is to including the first acoustic impedance layer and rising tone impedance layer, the first acoustic impedance layer and second acoustic resistance
The acoustic impedance of anti-layer is different.
3. bulk acoustic wave resonator according to claim 2, wherein the piezo-electric stack structure includes hearth electrode, top electrode
And the piezoelectric film between the hearth electrode and top electrode；
The first Bragg reflection structure, first Bragg reflection are formed between the substrate and the piezo-electric stack structure
One rising tone impedance layer of structure is contacted with the piezoelectric film of the piezo-electric stack structure and hearth electrode, the first Bragg reflection knot
The one first acoustic impedance layer and the substrate contact of structure；And/or
The second Bragg reflection structure is formed on the piezo-electric stack structure, the one of the second Bragg reflection structure
Two acoustic impedance layers are contacted with the top electrode of the piezo-electric stack structure, one first acoustic impedance layer of the second Bragg reflection structure
With the contact pads；
Wherein, the acoustic impedance of the first acoustic impedance layer is greater than the acoustic impedance of the rising tone impedance layer.
4. bulk acoustic wave resonator according to claim 3, wherein the pad includes the first pad and the second pad；
First pad is on the hearth electrode or the first Bragg reflection structure；
Second pad is on the top electrode, and part covers described in the second Bragg reflection structure, part covering
Top electrode；Or second pad is on the top electrode, and part covers the top electrode.
5. bulk acoustic wave resonator according to claim 4, wherein
The piezoelectric film is formed with the first contact hole, and first pad connects via first contact hole with the hearth electrode
Touching；Or
First acoustic impedance layer of the first Bragg reflection structure is formed using conductive material, the first Bragg reflection knot
Rising tone impedance layer, the hearth electrode and the piezoelectric film of structure are formed with the first contact hole, and first pad is via described
First contact hole is contacted with the first acoustic impedance layer of the first Bragg reflection structure；First pad and hearth electrode connect
Contacting surface product is greater than or equal to the contact area of the first acoustic impedance layer of first pad and the first Bragg reflection structure.
6. bulk acoustic wave resonator according to claim 4, wherein the second Bragg reflection structure is formed with second and connects
Contact hole, second pad are contacted via second contact hole with the top electrode, and second pad and top electrode connect
Contacting surface product is less than or equal to the contact area of second pad and the first acoustic impedance layer.
7. bulk acoustic wave resonator according to claim 2, wherein the first acoustic impedance layer with a thickness of bulk acoustic resonance
The 1/4 of device effective wavelength, the thickness of the rising tone impedance layer are greater than the 1/4 of bulk acoustic wave resonator effective wavelength.
8. bulk acoustic wave resonator according to claim 2, wherein the rising tone impedance layer has positive frequency temperature system
Number, material SiOX。
9. a kind of production method of the bulk acoustic wave resonator with temperature compensation characteristic, comprising:
Substrate is provided；
Expendable material is formed over the substrate；
Piezo-electric stack structure is formed on the substrate for being formed with expendable material；And；
Pad is formed in the piezo-electric stack structure；And
Expendable material is discharged, sound reflecting chamber is formed, thus obtains air-gap type sound reflecting unit；
Wherein, the method also includes between the substrate and the piezo-electric stack structure, and/or the piezo-electric stack structure
Upper formation Bragg reflection structure.
10. a kind of filter comprising cascade multiple bulk acoustic wave resonators as described in any one of claim 1-8.
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| CN110932694A (en) * | 2019-11-20 | 2020-03-27 | 电子科技大学 | Film bulk acoustic resonator |
| CN111082775A (en) * | 2019-12-30 | 2020-04-28 | 中国电子科技集团公司第五十五研究所 | Film bulk acoustic resonator with high quality factor |
| CN111245394A (en) * | 2019-12-16 | 2020-06-05 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with electrode having void layer and temperature compensation layer, filter, and electronic device |
| WO2020238509A1 (en) * | 2019-05-31 | 2020-12-03 | 天津大学 | Resonator having multilayer protrusion structure and manufacturing method therefor, filter, and electronic device |
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| CN112511129A (en) * | 2020-12-02 | 2021-03-16 | 赛莱克斯微系统科技（北京）有限公司 | Airtight packaging structure of film bulk acoustic resonator and preparation method thereof |
| CN113328719A (en) * | 2021-06-19 | 2021-08-31 | 深圳市封神微电子有限公司 | Solid assembled bulk acoustic wave resonator with temperature compensation function |
| CN113328719B (en) * | 2021-06-19 | 2023-10-03 | 深圳市封神微电子有限公司 | Solid assembly type bulk acoustic wave resonator with temperature compensation function |
| CN113746446A (en) * | 2021-09-07 | 2021-12-03 | 上海集成电路材料研究院有限公司 | Bulk acoustic wave resonator with frequency stabilizing function |
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