CN101630946A - Film bulk acoustic resonator (FBAR) and preparation method thereof - Google Patents
Film bulk acoustic resonator (FBAR) and preparation method thereof Download PDFInfo
- Publication number
- CN101630946A CN101630946A CN200910101967A CN200910101967A CN101630946A CN 101630946 A CN101630946 A CN 101630946A CN 200910101967 A CN200910101967 A CN 200910101967A CN 200910101967 A CN200910101967 A CN 200910101967A CN 101630946 A CN101630946 A CN 101630946A
- Authority
- CN
- China
- Prior art keywords
- fbar
- chip
- substrate
- passivation layer
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a film bulk acoustic resonator (FBAR) and a preparation method thereof. The film bulk acoustic resonator comprises a substrate, an acoustic wave reflecting layer and a sandwich piezoelectric stack which are integrated into a whole, wherein the substrate comprises an integrated circuit chip capable of carrying out FBAR signal processing and a passivation layer which is deposited on the integrated circuit chip and polished on the surface; and the acoustic wave reflecting layer and the sandwich piezoelectric stack are positioned on the surface of the passivation layer of the substrate. The FBAR does not additionally occupy the area of a silicon wafer, can greatly reduce the area and the cost of the chip, has simple and reliable structure, is convenient for sensing, is connected with a processing circuit by a communication hole, can reduce the reflection of a radio frequency signal and can be used for single-chip integrated design of a plurality of radio frequency systems and micro-quality sensing systems.
Description
Technical field
The present invention relates to microelectronics technology, relate in particular to a kind of thin film bulk acoustic resonator FBAR and manufacture method thereof.
Background technology
Radio communication just develops towards high communication frequency, high transfer rate, highly dense multiplexing and highly integrated direction.Semiconductor technology can be integrated into active device a chip fully at present, but passive frequency device can't be integrated, and this has seriously restricted the development of RFIC.Passive device mainly is multiplexer, filter, resonator and coupling LC network, can constitute multiplexer, filter, oscillator etc. by resonator, and a transceiver needs a plurality of resonators to constitute multiplexer, VCO and RF filter.Therefore, the integrated of elementary cell resonator is the key of problem.Radio communication requires to realize the more transfer of data of high power capacity in very narrow frequency range at present, duplexer such as code division multiple access (CDMA) frequency band requires very precipitous squareness factor and isolation, multichannel input and output and for example of new generation (MIMO) will realize many I/O communications at very narrow passage, need the good combining filter of filtering characteristic, and for example the VCO of low noise low-power consumption needs the resonator of a high Q; This just needs the resonator that a kind of Q value is high, temperature coefficient is low, loss is low, realizes filter, duplexer and the oscillator of these index harshnesses.The resonator of seeking a kind of high Q value that can be integrated in a word becomes the key of RFIC integrated technology, also is the focus that each big trans-corporation falls over each other to study.
At present radio-frequency filter mainly be can not be integrated dielectric filter and surface acoustic wave (SAW) filter.Though but the good volume of the former performance is too big, latter's power capacity and operating frequency are low, Insertion Loss and temperature coefficient is big, the Q value is low, are difficult to satisfy the combination property of the needed selecting frequency characteristic of radio system, integrated and low-power consumption.The appearance of MEMS (micro electro mechanical system) (MEMS) technical development, particularly thin film bulk acoustic resonator (FBAR) has brought dawn for the integrated high performance RFIC of single-chip.FBAR is a kind of bulk acoustic wave (BAW) device, structure is very simple, usually constitute by the sandwich piezoelectric pile that is produced on the silicon substrate, wherein the sandwich piezoelectric pile is made of bottom electrode, piezoelectric membrane and top electrode, and utilization sound compressional wave reflects to form standing wave resonance in the sandwich structure of bottom electrode, piezoelectric membrane, top electrode.
FBAR have operating frequency height, radio band function admirable, with advantages such as potentiality, the power load of semiconductor technology compatibility is good, be considered to the integrated GHz radio-frequency front-end solution of chip fully of present tool future.Its good filtering characteristic, low Insertion Loss and low-temperature coefficient make it in super low-power consumption radio-frequency front-end field the important application prospect be arranged.Owing to its high sensitivity characteristic (Q＞1200), FBAR is widely used in chemistry and biological field also as micro-mass sensor simultaneously.Because the wide application prospect of FBAR, its integrated research receives increasing concern.Mainly contain at present and mix the integrated and integrated two kinds of integrated strategies of monolithic.Mix integrated FBAR circuit soon and original production of integrated circuits on two separate substrates, with plain conductor both are bonded to together then, constitute complete circuit, the CMOS technology of the MEMS technology of FBAR and signal processing circuit can be finished respectively like this, need not consider its processing compatibility.Use the integrated FBAR of this method can be referring to " A 300uW 1.9GHz CMOS Oscillator UtilizingMicromachined Resonators " (IEEE J.Solid-State Circuit of B.P.Otis etc. as oscillator, Jul.2003, vol.38, pp1271-1274), but this integrated approach mechanically stable degree is not high, and is not suitable for the batch process of product.Method for integrating monolithic is that the signal processing integrated circuit with FBAR and FBAR is produced on the silicon chip, uses CMOS technology to realize the signal processing integrated circuit of FBAR, re-uses back CMOS technology and realizes FBAR, and connect by metal line.1993, U.S. Pat 5,260, this technology is disclosed in 596, though area is littler than the mixing integrated approach that adopts different substrates, owing to be to make and interconnected FBAR and cmos circuit on same substrate plane, complex process, and area can't reduce too much.2005, begin to have bibliographical information based on the integrated realization of the FBAR of this technology, can be referring to " Integration of high-Q BAW resonators andfilters above IC " (IEEE International Solid-State Circuits Conference of M.A.Dubois etc., Digestof Technical Papers.2005, pp 392-393) and " A SiGe:CBiCMOS WCDMA Zero-IF RF Front-End Using an Above-IC BAW Filter " (IEEE International Solid-State Circuits Conference of J.F.Carpentier etc., Digest of TechnicalPapers.2005, pp 394-395).2008, patent documentation WO 2008/101646A1 has proposed single slice integration technique, be that FBAR is inverted, support the electric contact that realizes cmos circuit with metal level, and form an air-gap structure, this method can further reduce chip area, but still need two cover different process to prepare FBAR and cmos circuit separately, and this method adopts supporting construction, and reliability is not high enough, and rate of finished products can be relatively low.Above-mentioned integrated technology all needs an independent silicon area to be used to make FBAR, be produced on the silicon chip, and the general area of FBAR is 1～5 * 10
4Um
2, this area for silicon integrated circuit is too big, and cost is too high.
In a word, realize simply integratedly, and dwindling FBAR simultaneously, to take silicon area be to reduce the key technology of its cost.Therefore, need a kind of demand to the FBAR integrated technique, can realize that FBAR is integrated with the monolithic of existing original integrated circuit technology, chip area is little, and the structural reliability height.
Summary of the invention
The invention provides a kind of thin film bulk acoustic resonator (FBAR) structure and integrated manufacturing method thereof, thin film bulk acoustic resonator of the present invention does not take silicon area in addition, can reduce chip area and cost greatly, and it is simple and reliable for structure, be convenient to sensing, FBAR is connected by through-hole interconnection with treatment circuit, can reduce the reflection of radiofrequency signal, can be used for the integrated design of single-chip of multiple radio system and small mass sensitivity system.
A kind of thin film bulk acoustic resonator, form by the substrate that becomes one, acoustic reflection layer and sandwich piezoelectric pile three parts, described substrate is by carrying out the integrated circuit (IC) chip of FBAR signal processing and being deposited on the integrated circuit (IC) chip and the surface constitutes through the passivation layer of polishing, described acoustic reflection layer is positioned at the passivation layer polished surface of substrate, and the sandwich piezoelectric pile is positioned at the acoustic reflection laminar surface.
Integrated circuit (IC) chip in sandwich piezoelectric pile and the substrate uses through-hole interconnection to be connected, and perfusion conducting medium in the described through-hole interconnection (as tungsten etc.) is connected with integrated circuit (IC) chip circuit in the substrate with realization sandwich piezoelectric pile.
In order not influence the operate as normal of thin film bulk acoustic resonator, the piezoelectric working district of sandwich piezoelectric pile should be avoided in the position of described through-hole interconnection.
Position between acoustic reflection layer and the sandwich piezoelectric pile only needs to get final product according to the prior art layout, the substrate that the thin film bulk acoustic resonator of the present invention and the prior art main distinction are to adopt is for carrying out the integrated circuit (IC) chip of FBAR signal processing, and this integrated circuit (IC) chip surface done passivation and polishing, use the through-hole interconnection technology to be connected between chip and the piezoelectric pile.
The present invention also provides a kind of manufacture method of described thin film bulk acoustic resonator, comprises the steps:
(1) utilizing the prior art making can carry out the integrated circuit (IC) chip of FBAR signal processing (can be under the prerequisite that guarantees its function, select the chip of various technology types for use), at described integrated circuit (IC) chip surface deposition passivation layer, the material of passivation layer is silicon dioxide, Pyrex, phosphorosilicate glass, silicon nitride or photosensitive resin, thickness is at 0.1～100um, the deposition of passivation layer can adopt prior aries such as low-pressure chemical vapor phase deposition equipment to finish, to the surface process chemico-mechanical polishing polishings such as (CMP) of passivation layer, obtain substrate again.
Described photosensitive resin is polyimide photosensitive resin, benzocyclobutene photosensitive resin or epoxy photosensitive resin;
(2) passivation layer surface through polishing at substrate forms acoustic reflection layer and sandwich piezoelectric pile successively.
The advantage of thin film bulk acoustic resonator of the present invention is:
(1) FBAR is to be positioned on original integrated circuit as the function element of the frequency dependence that cooperates with integrated circuit, can reduce the area of entire circuit greatly, improves integrated level;
(2) it is interconnected to adopt the contact hole technology to realize, has saved bonding line, reduces interconnected parasitism, can improve circuit performance.Adopt through-hole interconnection to connect FBAR and integrated circuit, reduced disturbing mutually of radiofrequency signal;
(3) passivation layer partly plays a protective role to integrated circuit, particularly to single chip integrated FBAR transducer;
(4) mechanical fastness is strong, and is simple and reliable for structure, is convenient to sensing, and the high-performance radio-frequency or the sensor-based system that are very suitable for adverse circumstances are used.
Description of drawings
Fig. 1 is the integrated morphology schematic top plan view of the solid-state assembly type FBAR of employing Bragg reflecting layer of the present invention;
Fig. 2 is the integrated morphology generalized section of the solid-state assembly type FBAR of employing Bragg reflecting layer of the present invention.
Embodiment
Referring to Fig. 1, the integrated morphology schematic top plan view of using the FBAR of Bragg reflecting layer of the present invention, Fig. 2 is the integrated morphology generalized section of the FBAR of the related employing Bragg reflecting layer of embodiments of the present invention.
FBAR comprises substrate 110 among the figure, and on acoustic reflection layer and sandwich piezoelectric pile 111, the acoustic reflection layer among the figure is made of one deck low acoustic impedance film 104 and one deck acoustic impedance film 105.
The sandwich piezoelectric pile comprises top electrode 101, bottom electrode 103 and piezoelectric layer 102.
When FBAR of the present invention makes, at first be on Silicon Wafer, to use the manufacturing of CMOS technology can carry out the integrated circuit (IC) chip 109 of FBAR signal processing, adopt the thick oxygen passivation layer 106 (silicon nitride) of low-pressure chemical vapor phase deposition equipment (LPCVD) plating 50um on integrated circuit (IC) chip 109 then, again passivation layer 106 is carried out chemico-mechanical polishing (CMP), upper surface is polished flat, form the substrate 110 of FBAR integrated morphology of the present invention this moment, the planarization on substrate 110 surfaces affects the reflection of sound wave on the surface, smooth more smooth, then the Q value of FBAR is also high more.
Prague acoustic reflection layer of making FBAR then in substrate 110 surfaces successively is right, i.e. low acoustic impedance film 104 and acoustic impedance film 105.
Low acoustic impedance film 104 aluminium (Al) are also used the dc magnetron sputtering method preparation, and acoustic impedance film 105 is selected SiO for use
2And use the LPCVD method to prepare.
Next on Bragg reflecting layer, make the sandwich structure piezoelectric pile 111 of FBAR, comprise top electrode 101, piezoelectric layer 102 and bottom electrode 103, upper and lower electrode aluminium (Al) electrode also adopts the dc sputtering preparation, piezoelectric layer 102 materials can be selected aluminium nitride (AlN) and adopt the preparation of radio frequency magnetron reactive sputtering method, and production order is followed successively by: bottom electrode 103, piezoelectric layer 102, top electrode 101.
Make through-hole interconnection 107 and through-hole interconnection 108 at last, use tungsten plug technology respectively top electrode 101 and the bottom electrode 103 of FBAR to be coupled together with described integrated circuit 109, realize the complete function of monolithic integrated system.
Adopt the integrated FBAR of the present invention, its integrated mechanical fastness is strong, simple and reliable for structure, is convenient to sensing, is applied to radio frequency or sensor-based system, and is good to various complex environment adaptability.
Claims (6)
1, a kind of thin film bulk acoustic resonator, it is characterized in that, form by the substrate that becomes one, acoustic reflection layer and sandwich piezoelectric pile three parts, described substrate is by carrying out the integrated circuit (IC) chip of FBAR signal processing and being deposited on the integrated circuit (IC) chip and the surface constitutes through the passivation layer of polishing, described acoustic reflection layer is positioned at the polished surface of substrate passivation layer, and described sandwich piezoelectric pile is positioned at the acoustic reflection laminar surface.
2, thin film bulk acoustic resonator as claimed in claim 1 is characterized in that, described sandwich piezoelectric pile uses through-hole interconnection to realize that circuit is connected with the integrated circuit (IC) chip in the substrate.
3, a kind of manufacture method of thin film bulk acoustic resonator is characterized in that, comprises the steps:
(1) makes the integrated circuit (IC) chip that to carry out the FBAR signal processing, behind described integrated circuit (IC) chip surface deposition passivation layer,, obtain substrate the surface process polishing of passivation layer;
(2) the polishing passivation layer surface at substrate forms acoustic reflection layer and sandwich piezoelectric pile successively.
4, manufacture method as claimed in claim 3 is characterized in that, the material of described passivation layer is silicon dioxide, Pyrex, phosphorosilicate glass, silicon nitride or photosensitive resin.
5, manufacture method as claimed in claim 3 is characterized in that, the thickness of described passivation layer is 0.1～100um.
6, manufacture method as claimed in claim 4 is characterized in that, described photosensitive resin is polyimide photosensitive resin, benzocyclobutene photosensitive resin or epoxy photosensitive resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910101967A CN101630946A (en) | 2009-08-27 | 2009-08-27 | Film bulk acoustic resonator (FBAR) and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910101967A CN101630946A (en) | 2009-08-27 | 2009-08-27 | Film bulk acoustic resonator (FBAR) and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101630946A true CN101630946A (en) | 2010-01-20 |
Family
ID=41575923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910101967A Pending CN101630946A (en) | 2009-08-27 | 2009-08-27 | Film bulk acoustic resonator (FBAR) and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101630946A (en) |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101895269A (en) * | 2010-07-30 | 2010-11-24 | 中国科学院声学研究所 | Method for preparing piezoelectric film bulk acoustic wave resonator |
| CN101924529A (en) * | 2010-08-31 | 2010-12-22 | 庞慰 | Piezoelectric resonator structure |
| CN102621026A (en) * | 2012-03-12 | 2012-08-01 | 山东科技大学 | Thin film acoustic wave resonance biochemical sensor integrating microchannel |
| CN103326689A (en) * | 2013-05-28 | 2013-09-25 | 江苏艾伦摩尔微电子科技有限公司 | Single chip integrated temperature compensation film buck acoustic resonator |
| CN103326692A (en) * | 2013-05-28 | 2013-09-25 | 江苏艾伦摩尔微电子科技有限公司 | Electrically tunable film bulk acoustic resonator and manufacturing method thereof |
| CN103731117A (en) * | 2013-12-31 | 2014-04-16 | 江苏艾伦摩尔微电子科技有限公司 | Thin film volume acoustic wave harmonic oscillator structure and manufacturing method thereof |
| CN105353143A (en) * | 2010-06-30 | 2016-02-24 | 安派科生物医学科技有限公司 | Apparatus for disease detection |
| CN107342748A (en) * | 2017-07-04 | 2017-11-10 | 浙江大学 | A kind of bulk acoustic wave resonator of based single crystal piezoelectric membrane and preparation method thereof |
| GB2554400A (en) * | 2016-09-26 | 2018-04-04 | Univ Warwick | Bulk acoustic wave resonator based sensor |
| CN108649921A (en) * | 2012-01-18 | 2018-10-12 | 三星电子株式会社 | Bulk acoustic wave resonator |
| CN108964631A (en) * | 2017-05-18 | 2018-12-07 | 三星电机株式会社 | Bulk acoustic wave resonator |
| CN109639251A (en) * | 2018-12-10 | 2019-04-16 | 开元通信技术（厦门）有限公司 | Bulk acoustic wave resonator and preparation method thereof, filter |
| CN109802645A (en) * | 2018-12-26 | 2019-05-24 | 天津大学 | A kind of heterogeneous integrated approach of air-gap type piezoelectric sound wave device and the device |
| CN110265544A (en) * | 2019-06-24 | 2019-09-20 | 京东方科技集团股份有限公司 | Piezoelectric transducer and preparation method, the method and electronic equipment that carry out fingerprint recognition |
| CN111010130A (en) * | 2019-12-19 | 2020-04-14 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with temperature compensation layer and electrical layer, filter and electronic equipment |
| WO2020125355A1 (en) * | 2018-12-18 | 2020-06-25 | 天津大学 | Filter having increased via hole area and electronic apparatus |
| CN112968123A (en) * | 2021-02-04 | 2021-06-15 | 电子科技大学 | Flexible film type piezoelectric acoustic emission sensor and manufacturing method thereof |
| WO2021217749A1 (en) * | 2020-04-26 | 2021-11-04 | 深圳市信维通信股份有限公司 | Filtering device, radio frequency front-end device and wireless communication device |
| US11606080B2 (en) | 2020-04-26 | 2023-03-14 | Shenzhen Sunway Communication Co., Ltd. | Filter device, RF front-end device and wireless communication device |
-
2009
- 2009-08-27 CN CN200910101967A patent/CN101630946A/en active Pending
Cited By (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105353143A (en) * | 2010-06-30 | 2016-02-24 | 安派科生物医学科技有限公司 | Apparatus for disease detection |
| CN101895269A (en) * | 2010-07-30 | 2010-11-24 | 中国科学院声学研究所 | Method for preparing piezoelectric film bulk acoustic wave resonator |
| CN101895269B (en) * | 2010-07-30 | 2012-09-05 | 中国科学院声学研究所 | Method for preparing piezoelectric film bulk acoustic wave resonator |
| CN101924529A (en) * | 2010-08-31 | 2010-12-22 | 庞慰 | Piezoelectric resonator structure |
| CN101924529B (en) * | 2010-08-31 | 2012-10-10 | 庞慰 | Piezoelectric resonator structure |
| CN108649921B (en) * | 2012-01-18 | 2023-08-25 | 三星电子株式会社 | bulk acoustic wave resonator |
| CN108649921A (en) * | 2012-01-18 | 2018-10-12 | 三星电子株式会社 | Bulk acoustic wave resonator |
| CN102621026A (en) * | 2012-03-12 | 2012-08-01 | 山东科技大学 | Thin film acoustic wave resonance biochemical sensor integrating microchannel |
| CN103326692A (en) * | 2013-05-28 | 2013-09-25 | 江苏艾伦摩尔微电子科技有限公司 | Electrically tunable film bulk acoustic resonator and manufacturing method thereof |
| CN103326689A (en) * | 2013-05-28 | 2013-09-25 | 江苏艾伦摩尔微电子科技有限公司 | Single chip integrated temperature compensation film buck acoustic resonator |
| CN103731117A (en) * | 2013-12-31 | 2014-04-16 | 江苏艾伦摩尔微电子科技有限公司 | Thin film volume acoustic wave harmonic oscillator structure and manufacturing method thereof |
| US11249049B2 (en) | 2016-09-26 | 2022-02-15 | The University Of Warwick | Bulk acoustic wave resonator based sensor |
| GB2554400A (en) * | 2016-09-26 | 2018-04-04 | Univ Warwick | Bulk acoustic wave resonator based sensor |
| CN108964631A (en) * | 2017-05-18 | 2018-12-07 | 三星电机株式会社 | Bulk acoustic wave resonator |
| CN108964631B (en) * | 2017-05-18 | 2022-02-18 | 三星电机株式会社 | Bulk acoustic wave resonator |
| CN107342748B (en) * | 2017-07-04 | 2020-04-28 | 浙江大学 | Bulk acoustic wave resonator based on single crystal piezoelectric film and preparation method thereof |
| CN107342748A (en) * | 2017-07-04 | 2017-11-10 | 浙江大学 | A kind of bulk acoustic wave resonator of based single crystal piezoelectric membrane and preparation method thereof |
| CN109639251A (en) * | 2018-12-10 | 2019-04-16 | 开元通信技术（厦门）有限公司 | Bulk acoustic wave resonator and preparation method thereof, filter |
| WO2020125355A1 (en) * | 2018-12-18 | 2020-06-25 | 天津大学 | Filter having increased via hole area and electronic apparatus |
| CN109802645A (en) * | 2018-12-26 | 2019-05-24 | 天津大学 | A kind of heterogeneous integrated approach of air-gap type piezoelectric sound wave device and the device |
| CN110265544A (en) * | 2019-06-24 | 2019-09-20 | 京东方科技集团股份有限公司 | Piezoelectric transducer and preparation method, the method and electronic equipment that carry out fingerprint recognition |
| CN111010130A (en) * | 2019-12-19 | 2020-04-14 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with temperature compensation layer and electrical layer, filter and electronic equipment |
| WO2021217749A1 (en) * | 2020-04-26 | 2021-11-04 | 深圳市信维通信股份有限公司 | Filtering device, radio frequency front-end device and wireless communication device |
| US11606080B2 (en) | 2020-04-26 | 2023-03-14 | Shenzhen Sunway Communication Co., Ltd. | Filter device, RF front-end device and wireless communication device |
| CN112968123A (en) * | 2021-02-04 | 2021-06-15 | 电子科技大学 | Flexible film type piezoelectric acoustic emission sensor and manufacturing method thereof |
| CN112968123B (en) * | 2021-02-04 | 2022-11-04 | 电子科技大学 | Flexible film type piezoelectric acoustic emission sensor and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101630946A (en) | Film bulk acoustic resonator (FBAR) and preparation method thereof | |
| JP5662935B2 (en) | Antenna matching circuit | |
| CN103731117A (en) | Thin film volume acoustic wave harmonic oscillator structure and manufacturing method thereof | |
| US7233218B2 (en) | Air-gap type FBAR, and duplexer using the FBAR | |
| EP1209807B1 (en) | Filter structure and arrangement comprising piezoelectric resonators | |
| US8018303B2 (en) | Bulk acoustic wave device | |
| EP1253713B1 (en) | Controlled effective coupling coefficients for film bulk acoustic resonators | |
| US6285866B1 (en) | Single-chip radio structure with piezoelectric crystal device integrated on monolithic integrated circuit and method of fabricating the same | |
| Nguyen | MEMS-based RF channel selection for true software-defined cognitive radio and low-power sensor communications | |
| JP2008505573A (en) | A filter with volume wave resonators that can operate symmetrically on both sides | |
| KR20040103587A (en) | Film bulk acoustic resonator having support structure and method thereof | |
| CN101977026A (en) | Manufacturing method of cavity-type film bulk acoustic resonator (FBAR) | |
| JP2008172713A (en) | Piezoelectric thin film resonator, piezoelectric thin film resonator filter, and its manufacturing method | |
| CN108566177B (en) | Radio frequency resonator and filter | |
| US20080246557A1 (en) | Component Comprising at Least One Filter that Operates with Acoustic Waves | |
| EP1588487A2 (en) | Resonator filter structure having equal resonance frequencies | |
| Aigner | High performance RF-filters suitable for above IC integration: film bulk-acoustic-resonators (FBAR) on silicon | |
| KR100555762B1 (en) | Air-gap type ???? fabrication method and FBAR fabricated by the same, filter and duPlexer using the FBAR. | |
| Aigner | MEMS in RF-filter applications: thin film bulk-acoustic-wave technology | |
| CN203675062U (en) | Film bulk acoustic wave resonator structure | |
| CN114826191B (en) | Film bulk acoustic resonator | |
| CN101951238A (en) | Piezoelectric film bulk acoustic wave resonator | |
| Park et al. | Micromachined FBAR RF filters for advanced handset applications | |
| WO2004066494A1 (en) | Resonator filter structure with improved balance | |
| Zuo et al. | Single-ended-to-differential and differential-to-differential channel-select filters based on piezoelectric AlN contour-mode MEMS resonators |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Open date: 20100120 |