CN103731117A - Thin film volume acoustic wave harmonic oscillator structure and manufacturing method thereof - Google Patents
Thin film volume acoustic wave harmonic oscillator structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN103731117A CN103731117A CN201310747829.3A CN201310747829A CN103731117A CN 103731117 A CN103731117 A CN 103731117A CN 201310747829 A CN201310747829 A CN 201310747829A CN 103731117 A CN103731117 A CN 103731117A
- Authority
- CN
- China
- Prior art keywords
- electrode
- integrated circuit
- chip
- hole interconnection
- bulk acoustic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a thin film volume acoustic wave harmonic oscillator structure and a manufacturing method thereof. The method comprises the steps that a polyimide liquid coating is evenly coated on the surface of an integrated circuit chip directly in a spin mode, then a polyimide layer is formed between the high temperature of 170 DEG C and 250 DEG C in a solidifying mode, a piezoelectric stack structure is deposited on the surface of the polyimide layer, the polyimide layer is used as an acoustic reflecting layer, then interconnected through holes are formed, and the entire thin film volume acoustic wave harmonic oscillator structure and an integrated circuit of the integrated circuit chip are electrically connected through the interconnected through holes. According to the thin film volume acoustic wave harmonic oscillator structure and the manufacturing method thereof, the thin film volume acoustic wave harmonic oscillator structure comprises the integrated circuit chip, the polyimide layer and a piezoelectric stack, the structure is simple and reliable, integrated mechanical firmness is high, sensing is facilitated, and the thin film volume acoustic wave harmonica oscillator structure is applied to radio frequency or sensing systems and is suitable for various complex environments. The manufacturing method of the thin film volume acoustic wave harmonic oscillator structure is simple and quick, the production cycle is shortened, the production cost is lowered, and a good application prospect is achieved.
Description
Technical field
The present invention relates to microelectronics technology, be specifically related to a kind of film bulk acoustic resonator structure and preparation method thereof.
Background technology
At wireless communication field, high communication frequency, high transfer rate, the highly dense multiplexing and highly integrated development trend that becomes, this just has higher requirement to the integrated of components and parts.At present active device is integrated into a chip quite ripe in semiconductor technology, but the integrated research of passive device is also relatively less and immature, this has seriously restricted the development of integrated technology, passive device is mainly multiplexer, filter, resonator and coupling LC network, by resonator, can form multiplexer, filter, oscillator etc., a transceiver needs a plurality of resonators to form multiplexer, oscillator and filter, therefore, the integrated of elementary cell resonator is the key of problem.Radio communication requires to realize the more transfer of data of high power capacity in very narrow frequency band at present, very precipitous squareness factor and the isolation of duplexer requirement such as code division multiple access (CDMA) frequency band, and for example multichannel input and output of new generation (MIMO) will realize many I/O (I/O) communication at very narrow passage, need the good combining filter of filtering characteristic, and for example the oscillator of low noise power consumption needs the resonator of a high Q, this just needs a kind of Q value high, temperature coefficient is low, the low resonator of loss is realized the filter of these index harshnesses, duplexer and oscillator, the resonator of finding in a word a kind of high Q value that can be integrated becomes the key of radio frequency integrated circuit (RFIC) integrated technology, Ye Shige great trans-corporation falls over each other the focus of research.
At present radio-frequency filter be mainly can not be integrated dielectric filter and surface acoustic wave (SAW) filter, though the former performance is good, volume is too large, the latter's power capacity and operating frequency are low, Insertion Loss and temperature coefficient large, Q value is low, are difficult to meet the combination property of the needed selecting frequency characteristic of radio system, integrated and low-power consumption.The appearance of MEMS (micro electro mechanical system) (MEMS) technical development, particularly thin film bulk acoustic resonator (FBAR) has brought dawn to the integrated high performance RFIC of single-chip.FBAR is a kind of bulk acoustic wave (BAW) device, structure is very simple, conventionally by the sandwich piezoelectric pile being produced on silicon substrate, formed, wherein sandwich piezoelectric pile consists of bottom electrode, piezoelectric membrane and top electrode, utilizes sound compressional wave to reflect to form standing wave resonance in the sandwich structure of bottom electrode, piezoelectric membrane, top electrode.
FBAR has that Insertion Loss is little, Q value is high, operating frequency is high, radio band function admirable, with the advantage such as potentiality, the power load of semiconductor technology compatibility is good, the gigahertz (GHZ) of integrated chip completely (GHz) the radio-frequency front-end solution that is considered at present tool future, its good filtering characteristic, filter with low insertion loss and low-temperature coefficient, make it in ultra-low power radio frequency front end field, have important application prospect, simultaneously due to its high sensitivity characteristic, FBAR, also as micro-mass sensor, is widely used in chemistry and biological field.Due to the wide application prospect of FBAR, its integrated research receives increasing concern, mainly contains at present and mixes the integrated and integrated two kinds of strategies of monolithic.Mix integrated approach and be about to FBAR circuit and original production of integrated circuits in two separate substrate plane, then with plain conductor, both are bonded to together, complete circuit, the CMOS (Complementary Metal Oxide Semiconductor) technology (CMOS) of the micro-structural of FBAR processing (MEMS) technique and signal processing circuit can complete respectively like this, need not consider its processing compatibility, use the integrated FBAR of the method can be referring to " A 300uW 1.9GHz CMOS Oscillator Utilizing Micromachined Resonators " (IEEE J. Solid-State Circuit of B.P.Otis etc. as oscillator, 2003V38pp1271-1274), this integrated approach mechanically stable degree is not high, and be not suitable for the batch production of product, method for integrating monolithic is that the signal processing integrated circuit of FBAR and FBAR is produced on a silicon chip, uses CMOS technique to realize the signal processing integrated circuit of FBAR, re-uses rear CMOS technique and realizes FBAR, and connect by metal line.1993, US Patent No. 5,260, this technology is disclosed in 596, although Area Ratio adopts the mixing integrated approach of different substrate plane little, because be makes and interconnected FBAR and cmos circuit in same substrate plane, complex process, and area can't reduce too much.2005, start to have the FBAR integration realization of bibliographical information based on this technology, can be referring to " Inregration of high-Q BAW resonators and filters above IC " (IEEE International Solid-State Circuits Conference of M.A.Dubois etc., Digest of Technical Paper.2005, pp 392-393) and " A SiGe:CBiCMOS WCDMA Zero-IF RF Front-End Using an Above-IC BAW Filter " (IEEE International Solid-State Circuit Conference of J.F.Carpentier etc., Digest of Technical Papers.2005, pp 394-395).2008, patent documentation WO 2008/101646 Al has proposed single slice integration technique, that FBAR is inverted, with metal level, support the electrical contact of realizing cmos circuit, and form an air-gap structure, the method can further reduce chip area, but still need two cover different process to prepare separately FBAR and cmos circuit, and the method adopts supporting construction, and reliability is not high enough, rate of finished products can be relatively low, so existing integrated technology, all need an independent silicon area for the manufacture of FBAR, be produced on a silicon chip, and the general area of FBAR is at 1 ~ 5*10
4um
2, this area for silicon integrated circuit is too large, and cost is too high.2009, patent documentation CNl01630946A(thin film bulk acoustic resonator of Zhejiang University and Tsing-Hua University's co-applications and preparation method thereof) proposed to prepare on passivation layer the method for FBAR, further reduced the area of chip, but need on passivation layer, first deposit one deck Prague acoustic reflection layer and make again thin film bulk acoustic resonator, due to deposition Prague emission layer, need the strict thickness of controlling each layer, and easily come off, in technique, be also relatively difficult to realize.
In a word, realizing simply integratedly, and dwindle FBAR simultaneously and take silicon area, realize simply in technique, is the key of improvement technology.Therefore, need to study a kind of novel FBRA, the monolithic that can realize FBAR and existing original integrated circuit technology is integrated, and chip area is little, and simple in structure, is easy to realize in technique.
Summary of the invention
In order to solve problems of the prior art, the invention provides film bulk acoustic resonator structure and preparation method thereof, film bulk acoustic resonator structure of the present invention comprises integrated circuit (IC) chip, polyimide layer and piezoelectric pile, simple and reliable for structure, integrated mechanical fastness is strong, be convenient to sensing, be applied to radio frequency or sensor-based system, be suitable for various numerous and diverse environment, the preparation method of this film bulk acoustic resonator structure is simple and quick, shortened the production cycle, reduced production cost, had a good application prospect.
In order to achieve the above object, the technical solution adopted in the present invention is:
Film bulk acoustic resonator structure, it is characterized in that: comprise substrate and the piezoelectric pile of being located at substrate surface, described substrate comprises integrated circuit (IC) chip and the polyimide layer of being located at integrated circuit (IC) chip surface, and described integrated circuit (IC) chip is connected by through-hole interconnection with piezoelectric pile.
Aforesaid film bulk acoustic resonator structure, it is characterized in that: described piezoelectric pile comprises the first electrode, piezoelectric layer and the second electrode, described through-hole interconnection comprises the first through-hole interconnection and the second through-hole interconnection, described the first electrode is connected with integrated circuit (IC) chip by the first through-hole interconnection, and described the second electrode is connected with integrated circuit (IC) chip by the second through-hole interconnection.
Aforesaid film bulk acoustic resonator structure, is characterized in that: the thickness of described polyimide layer is 1-70 μ m.
Aforesaid film bulk acoustic resonator structure, it is characterized in that: the structure distribution of described the first electrode and the second electrode is up-down structure, left and right structure or interdigital structure, the thickness of described the first electrode, the second electrode is 10-300nm, the thickness of described piezoelectric layer is 500-5000nm, the material of described the first electrode, the second electrode is aluminium, gold, platinum or titanium, and the material of described piezoelectric layer is zinc oxide or aluminium nitride.
Aforesaid film bulk acoustic resonator structure, is characterized in that: in described through-hole interconnection, be filled with conducting medium, described conducting medium is tungsten.
The preparation method of aforesaid film bulk acoustic resonator structure, is characterized in that: comprises the following steps,
The preparation method of aforesaid film bulk acoustic resonator structure, is characterized in that: in described step 1, adopt CMOS (Complementary Metal Oxide Semiconductor) technology on Silicon Wafer, to prepare integrated circuit (IC) chip.
The preparation method of aforesaid film bulk acoustic resonator structure, it is characterized in that: in described step 2, adopt sol evenning machine that polyimide liquid coating is got rid of into even one deck on integrated circuit (IC) chip surface, under 170 ℃ of-250 ℃ of high temperature, cure polyimide liquid coating obtains curing polyimide layer, and the thickness of described polyimide layer is 1-70 μ m.
The preparation method of aforesaid film bulk acoustic resonator structure, it is characterized in that: in described step 3, piezoelectric pile is for being followed successively by from top to bottom the first electrode, the sandwich structure of piezoelectric layer and the second electrode, the production order of described piezoelectric pile is the first electrode, piezoelectric layer and the second electrode, described the first electrode and the second electrode adopt DC sputtering preparation, described piezoelectric layer adopts the preparation of radio frequency magnetron reactive sputtering method, described the first electrode, the thickness of the second electrode is 10-300nm, the thickness of described piezoelectric layer is 500-5000nm, described the first electrode, the material of the second electrode is aluminium, gold, platinum or titanium, the material of described piezoelectric layer is zinc oxide or aluminium nitride.
The preparation method of aforesaid film bulk acoustic resonator structure, it is characterized in that: in described step 4, through-hole interconnection comprises the first through-hole interconnection and the second through-hole interconnection, described through-hole interconnection is manufactured by vertical through hole technology, in described through-hole interconnection, be filled with conducting medium, described conducting medium is tungsten, the first electrode in described step 3 is connected with integrated circuit (IC) chip in step 1 by the first through-hole interconnection, and in described step 3, the second electrode is connected with integrated circuit (IC) chip in step 1 by the second through-hole interconnection.
The invention has the beneficial effects as follows: film bulk acoustic resonator structure provided by the invention, 1, directly use polyimide layer as acoustic reflecting layer, simple in structure, easy to prepare, simplify greatly the manufacture craft of thin film bulk acoustic resonator, improved rate of finished products and stability; 2, thin film bulk acoustic resonator is directly produced on existing integrated circuit, and the chip area outside occupying volume has not reduced the area of whole integrated circuit greatly, has improved integrated level, the not obvious low reactance-resistance ratio that falls; 3, adopt through-hole interconnection technology to realize interconnected, saved bonding line, reduce interconnected parasitism, improve circuit performance, the circuit of realizing thin film bulk acoustic resonator and integrated circuit is connected, and has reduced disturbing mutually of radiofrequency signal; 4, polyimide layer partly plays a protective role to integrated circuit, particularly to single chip integrated thin film bulk acoustic resonator transducer; 5, Direct precipitation piezoelectric layer on polyimide layer, simple and reliable for structure, and mechanical fastness is good, is applicable to high-performance radio-frequency or sensor-based system application under adverse circumstances; The preparation method of film bulk acoustic resonator structure provided by the invention, surperficial Direct precipitation piezoelectric pile structure at polyimide layer, do not need to carry on the back etching, manufacture air-gap or form the complicated traditional handicrafts such as Bragg reflecting layer, greatly simplified the preparation technology of thin film bulk acoustic resonator, shorten fabrication cycle, reduced production cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of film bulk acoustic resonator structure of the present invention;
Fig. 2 is the vertical view of film bulk acoustic resonator structure of the present invention;
Fig. 3 is the S11 resonance curve of film bulk acoustic resonator structure of the present invention.
Reference numeral implication is as follows:
1: substrate; 101: integrated circuit (IC) chip; 102: polyimide layer; 2: piezoelectric pile; 201: the first electrodes; 202: piezoelectric layer; 203: the second electrodes; 3: through-hole interconnection; 301: the first through-hole interconnections; 302: the second through-hole interconnections.
Embodiment
Below in conjunction with accompanying drawing, the present invention will be further described.
Film bulk acoustic resonator structure as depicted in figs. 1 and 2, comprise substrate 1 and the piezoelectric pile 2 of being located at substrate 1 surface, substrate 1 comprises can carry out the integrated circuit (IC) chip 101 of thin film bulk acoustic resonator signal processing and the polyimide layer 102 that deposition is solidificated in integrated circuit (IC) chip 101 surfaces, preferably, the thickness of polyimide layer 102 is 1-70 μ m, integrated circuit (IC) chip 101 is connected by through-hole interconnection 3 with piezoelectric pile 2, in through-hole interconnection 3, be filled with conducting medium, conducting medium is tungsten, the through-hole interconnection 3 that the integrated circuit of integrated circuit (IC) chip 101 and piezoelectric pile 2 are loaded conducting medium tungsten by inside is realized circuit communication, and in order not affect the normal work of thin film bulk acoustic resonator, the piezoelectric working district of piezoelectric pile 2 should be avoided in the position of through-hole interconnection 3.Piezoelectric pile 2 comprises the first electrode 201, piezoelectric layer 202 and the second electrode 203, the structure distribution of the first electrode 201 and the second electrode 203 is up-down structure, left and right structure or interdigital structure, the first electrode 201, the thickness of the second electrode 203 is 10-300nm, the thickness of piezoelectric layer 202 is 500-5000nm, in the present embodiment, the structure of piezoelectric pile 2 is the first electrode 201, piezoelectric layer 202 and the second electrode 203 are deposited on the sandwich structure on polyimide layer 102 surfaces successively, one end of piezoelectric layer 202 is connected with the first electrode, the other end is directly connected with polyimide layer 102, due at the surperficial Direct precipitation piezoelectric layer 202 of polyimide layer 102, make this film bulk acoustic resonator structure simple and reliable, mechanically stable degree is high, be convenient to sensing, be applicable to radio frequency or sensor-based system under various complex environments, detailed, the first electrode 201, the material of the second electrode 203 is aluminium, gold, platinum or titanium, the material of piezoelectric layer 202 is zinc oxide or aluminium nitride, through-hole interconnection 3 comprises the first through-hole interconnection 301 and the second through-hole interconnection 302, the first electrode 201 is connected with integrated circuit (IC) chip 101 by the first through-hole interconnection 301, the second electrode 203 is connected with integrated circuit (IC) chip 101 by the second through-hole interconnection 302.Back of the body etching with conventional films bulk acoustic resonator structure, manufacture air-gap or form the complicated technologies such as Bragg reflecting layer and form good acoustic reflecting layer difference, film bulk acoustic resonator structure of the present invention directly arranges polyimide layer 102 as acoustic reflecting layer on integrated circuit (IC) chip 101 surfaces, and directly prepare piezoelectric pile 2 structures on the surface of polyimide layer 102, simplified greatly the manufacture craft of thin film bulk acoustic resonator, rate of finished products and the stability of thin film bulk acoustic resonator product have been improved, can not cause significantly reducing the high Q value characteristic of thin film bulk acoustic resonator simultaneously, as shown in Figure 3, the S11 resonance curve of the film bulk acoustic resonator structure of preparing according to the present invention, resonant frequency point is 1.555GHz, Q value is 150, there is higher Q value, in addition, by through-hole interconnection, piezoelectric pile and integrated circuit (IC) chip are realized to electricity and be connected, be about to whole film bulk acoustic resonator structure and be connected with radio frequency signal processing circuit electricity, effectively reduce the reflection of radiofrequency signal, improve integrated level, reduce costs, have a good application prospect.
The preparation method of film bulk acoustic resonator structure of the present invention, comprises the following steps:
Detailed, in step 1, adopt complementary metal oxide semiconductors (CMOS) (CMOS) technique on Silicon Wafer, to prepare integrated circuit (IC) chip 101, in step 2, adopt sol evenning machine that polyimide liquid coating is got rid of into even one deck on integrated circuit (IC) chip 101 surfaces, under 170 ℃ of-250 ℃ of high temperature, cure polyimide liquid coating obtains curing polyimide layer 102, the thickness of polyimide layer 102 is 1-70 μ m, in step 3, piezoelectric pile 2 is for being followed successively by from top to bottom the first electrode 201, the sandwich structure of piezoelectric layer 202 and the second electrode 203, the production order of piezoelectric pile 2 is the first electrode 201, piezoelectric layer 202 and the second electrode 203, the first electrode 201, the second electrode 203 adopts DC sputtering preparation, piezoelectric layer 202 adopts the preparation of radio frequency magnetron reactive sputtering method, the first electrode 201, the thickness of the second electrode 203 is 10-300nm, the thickness of piezoelectric layer 202 is 500-5000nm, the first electrode 201, the material of the second electrode 203 is aluminium, gold, platinum or titanium, the material of piezoelectric layer 202 is zinc oxide or aluminium nitride, in step 4, through-hole interconnection 3 comprises the first through-hole interconnection 301 and the second through-hole interconnection 302, through-hole interconnection 3 is manufactured by vertical through hole technology (TSV), in through-hole interconnection 3, be filled with conducting medium, conducting medium is tungsten, the first electrode 201 in step 3 is connected with integrated circuit (IC) chip in step 1 101 by the first through-hole interconnection 301, in step 3, the second electrode 203 is connected with integrated circuit (IC) chip in step 1 101 by the second through-hole interconnection 302.
The preparation method of above-mentioned film bulk acoustic resonator structure, directly in integrated circuit (IC) chip 101 surface uniform spin coating one deck polyimide liquid coatings, then between 170 ℃-250 ℃ of high temperature, solidify to form polyimide layer 102, in polyimide layer 102 surface deposition piezoelectric pile structures, and utilize polyimide layer 102 as acoustic reflecting layer, prepare again through-hole interconnection 3, by through-hole interconnection 3, whole film bulk acoustic resonator structure being realized to electricity with the integrated circuit of integrated circuit (IC) chip 101 is connected, whole operation is simple and quick, easy to prepare, production cycle shortens, be applicable to batch production.
More than show and described basic principle of the present invention, principal character and advantage.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; that in above-described embodiment and specification, describes just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.The claimed scope of the present invention is defined by appending claims and equivalent thereof.
Claims (10)
1. film bulk acoustic resonator structure, it is characterized in that: comprise substrate and the piezoelectric pile of being located at substrate surface, described substrate comprises integrated circuit (IC) chip and the polyimide layer of being located at integrated circuit (IC) chip surface, and described integrated circuit (IC) chip is connected by through-hole interconnection with piezoelectric pile.
2. film bulk acoustic resonator structure according to claim 1, it is characterized in that: described piezoelectric pile comprises the first electrode, piezoelectric layer and the second electrode, described through-hole interconnection comprises the first through-hole interconnection and the second through-hole interconnection, described the first electrode is connected with integrated circuit (IC) chip by the first through-hole interconnection, and described the second electrode is connected with integrated circuit (IC) chip by the second through-hole interconnection.
3. film bulk acoustic resonator structure according to claim 1, is characterized in that: the thickness of described polyimide layer is 1-70 μ m.
4. film bulk acoustic resonator structure according to claim 2, it is characterized in that: the structure distribution of described the first electrode and the second electrode is up-down structure, left and right structure or interdigital structure, the thickness of described the first electrode, the second electrode is 10-300nm, the thickness of described piezoelectric layer is 500-5000nm, the material of described the first electrode, the second electrode is aluminium, gold, platinum or titanium, and the material of described piezoelectric layer is zinc oxide or aluminium nitride.
5. film bulk acoustic resonator structure according to claim 1, is characterized in that: in described through-hole interconnection, be filled with conducting medium, described conducting medium is tungsten.
6. the preparation method based on film bulk acoustic resonator structure claimed in claim 1, is characterized in that: comprises the following steps,
Step 1, preparation integrated circuit (IC) chip;
Step 2, prepares polyimide layer: at the surface uniform coating polyimide liquid coating of integrated circuit (IC) chip, hot setting polyimide liquid coating obtains curing polyimide layer, and integrated circuit (IC) chip and polyimide layer form substrate jointly;
Step 3, prepares on the surface of polyimide layer the piezoelectric pile that comprises the first electrode, piezoelectric layer and the second electrode;
Step 4, prepares through-hole interconnection, and integrated circuit (IC) chip is connected by through-hole interconnection with piezoelectric pile, realizes electricity and connects, and forms film bulk acoustic resonator structure.
7. the preparation method of film bulk acoustic resonator structure according to claim 6, is characterized in that: in described step 1, adopt CMOS (Complementary Metal Oxide Semiconductor) technology on Silicon Wafer, to prepare integrated circuit (IC) chip.
8. the preparation method of film bulk acoustic resonator structure according to claim 6, it is characterized in that: in described step 2, adopt sol evenning machine that polyimide liquid coating is got rid of into even one deck on integrated circuit (IC) chip surface, under 170 ℃ of-250 ℃ of high temperature, cure polyimide liquid coating obtains curing polyimide layer, and the thickness of described polyimide layer is 1-70 μ m.
9. the preparation method of film bulk acoustic resonator structure according to claim 6, it is characterized in that: in described step 3, piezoelectric pile is for being followed successively by from top to bottom the first electrode, the sandwich structure of piezoelectric layer and the second electrode, the production order of described piezoelectric pile is the first electrode, piezoelectric layer and the second electrode, described the first electrode and the second electrode adopt DC sputtering preparation, described piezoelectric layer adopts the preparation of radio frequency magnetron reactive sputtering method, described the first electrode, the thickness of the second electrode is 10-300nm, the thickness of described piezoelectric layer is 500-5000nm, described the first electrode, the material of the second electrode is aluminium, gold, platinum or titanium, the material of described piezoelectric layer is zinc oxide or aluminium nitride.
10. the preparation method of film bulk acoustic resonator structure according to claim 6, it is characterized in that: in described step 4, through-hole interconnection comprises the first through-hole interconnection and the second through-hole interconnection, described through-hole interconnection is manufactured by vertical through hole technology, in described through-hole interconnection, be filled with conducting medium, described conducting medium is tungsten, the first electrode in described step 3 is connected with integrated circuit (IC) chip in step 1 by the first through-hole interconnection, and in described step 3, the second electrode is connected with integrated circuit (IC) chip in step 1 by the second through-hole interconnection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310747829.3A CN103731117A (en) | 2013-12-31 | 2013-12-31 | Thin film volume acoustic wave harmonic oscillator structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310747829.3A CN103731117A (en) | 2013-12-31 | 2013-12-31 | Thin film volume acoustic wave harmonic oscillator structure and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103731117A true CN103731117A (en) | 2014-04-16 |
Family
ID=50455074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310747829.3A Pending CN103731117A (en) | 2013-12-31 | 2013-12-31 | Thin film volume acoustic wave harmonic oscillator structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103731117A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104038177A (en) * | 2014-06-04 | 2014-09-10 | 江苏艾伦摩尔微电子科技有限公司 | Thin film bulk acoustic resonator for ultraviolet detection and preparation method thereof |
| CN104917476A (en) * | 2015-05-28 | 2015-09-16 | 贵州中科汉天下电子有限公司 | Manufacture method of acoustic wave resonator |
| CN106341094A (en) * | 2016-08-29 | 2017-01-18 | 中国科学院半导体研究所 | Bulk acoustic wave device preparation method |
| CN106374032A (en) * | 2016-11-14 | 2017-02-01 | 中国科学院半导体研究所 | Monocrystal sound wave device and manufacture method therefor |
| CN108964631A (en) * | 2017-05-18 | 2018-12-07 | 三星电机株式会社 | Bulk acoustic wave resonator |
| CN109802645A (en) * | 2018-12-26 | 2019-05-24 | 天津大学 | A kind of heterogeneous integrated approach of air-gap type piezoelectric sound wave device and the device |
| WO2021184138A1 (en) * | 2020-03-14 | 2021-09-23 | 华南理工大学 | Preparation process for thin film bulk acoustic wave resonator provided with flexible insulating substrate and circuit thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1959568A1 (en) * | 2007-02-19 | 2008-08-20 | Consejo Superior de Investigaciones Cientificas | Thin-film bulk acoustic ware resonator and method for performing heterogeneous integration of the same with complementary-metal-oxide-semiconductor integrated circuit |
| CN101630946A (en) * | 2009-08-27 | 2010-01-20 | 浙江大学 | Film bulk acoustic resonator (FBAR) and preparation method thereof |
| CN102420582A (en) * | 2011-11-29 | 2012-04-18 | 浙江大学 | Structure of surface acoustic wave device on basis of flexible substrate and manufacturing method of surface acoustic wave device |
| US20120164753A1 (en) * | 2009-04-29 | 2012-06-28 | The Trustees Of Columbia University In The City Of New York | Monolithic fbar-cmos structure such as for mass sensing |
| CN102867907A (en) * | 2012-10-11 | 2013-01-09 | 南京大学 | Method for manufacturing soft superconducting thin film |
| CN103326692A (en) * | 2013-05-28 | 2013-09-25 | 江苏艾伦摩尔微电子科技有限公司 | Electrically tunable film bulk acoustic resonator and manufacturing method thereof |
| CN203675062U (en) * | 2013-12-31 | 2014-06-25 | 江苏艾伦摩尔微电子科技有限公司 | Film bulk acoustic wave resonator structure |
-
2013
- 2013-12-31 CN CN201310747829.3A patent/CN103731117A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1959568A1 (en) * | 2007-02-19 | 2008-08-20 | Consejo Superior de Investigaciones Cientificas | Thin-film bulk acoustic ware resonator and method for performing heterogeneous integration of the same with complementary-metal-oxide-semiconductor integrated circuit |
| US20120164753A1 (en) * | 2009-04-29 | 2012-06-28 | The Trustees Of Columbia University In The City Of New York | Monolithic fbar-cmos structure such as for mass sensing |
| CN101630946A (en) * | 2009-08-27 | 2010-01-20 | 浙江大学 | Film bulk acoustic resonator (FBAR) and preparation method thereof |
| CN102420582A (en) * | 2011-11-29 | 2012-04-18 | 浙江大学 | Structure of surface acoustic wave device on basis of flexible substrate and manufacturing method of surface acoustic wave device |
| CN102867907A (en) * | 2012-10-11 | 2013-01-09 | 南京大学 | Method for manufacturing soft superconducting thin film |
| CN103326692A (en) * | 2013-05-28 | 2013-09-25 | 江苏艾伦摩尔微电子科技有限公司 | Electrically tunable film bulk acoustic resonator and manufacturing method thereof |
| CN203675062U (en) * | 2013-12-31 | 2014-06-25 | 江苏艾伦摩尔微电子科技有限公司 | Film bulk acoustic wave resonator structure |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104038177A (en) * | 2014-06-04 | 2014-09-10 | 江苏艾伦摩尔微电子科技有限公司 | Thin film bulk acoustic resonator for ultraviolet detection and preparation method thereof |
| CN104917476A (en) * | 2015-05-28 | 2015-09-16 | 贵州中科汉天下电子有限公司 | Manufacture method of acoustic wave resonator |
| CN104917476B (en) * | 2015-05-28 | 2022-04-12 | 苏州汉天下电子有限公司 | Method for manufacturing acoustic wave resonator |
| CN106341094A (en) * | 2016-08-29 | 2017-01-18 | 中国科学院半导体研究所 | Bulk acoustic wave device preparation method |
| CN106374032A (en) * | 2016-11-14 | 2017-02-01 | 中国科学院半导体研究所 | Monocrystal sound wave device and manufacture method therefor |
| CN108964631A (en) * | 2017-05-18 | 2018-12-07 | 三星电机株式会社 | Bulk acoustic wave resonator |
| CN108964631B (en) * | 2017-05-18 | 2022-02-18 | 三星电机株式会社 | Bulk acoustic wave resonator |
| CN109802645A (en) * | 2018-12-26 | 2019-05-24 | 天津大学 | A kind of heterogeneous integrated approach of air-gap type piezoelectric sound wave device and the device |
| WO2021184138A1 (en) * | 2020-03-14 | 2021-09-23 | 华南理工大学 | Preparation process for thin film bulk acoustic wave resonator provided with flexible insulating substrate and circuit thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101630946A (en) | Film bulk acoustic resonator (FBAR) and preparation method thereof | |
| CN103731117A (en) | Thin film volume acoustic wave harmonic oscillator structure and manufacturing method thereof | |
| US8283835B2 (en) | Guided bulk acoustic wave device having reduced height and method for manufacturing | |
| EP1209807B1 (en) | Filter structure and arrangement comprising piezoelectric resonators | |
| Lakin | Bulk acoustic wave coupled resonator filters | |
| CN100586010C (en) | Bulk acoustic wave filter and method for eliminating unwanted side passbands | |
| US7924119B1 (en) | Micromechanical bulk acoustic mode resonators having interdigitated electrodes and multiple pairs of anchor supports | |
| CN205195673U (en) | Wafer -level package device | |
| CN108259017A (en) | The manufacturing method of rf-resonator and wave filter | |
| US20060214745A1 (en) | Air-gap type FBAR, and duplexer using the FBAR | |
| CN108092639A (en) | A kind of micro-nano column flexible array film bulk acoustic resonator subfilter and its preparation | |
| US20020109564A1 (en) | Bulk acoustic wave filter and its package | |
| CN112803910A (en) | Preparation method of single crystal film bulk acoustic resonator | |
| JP2008505573A (en) | A filter with volume wave resonators that can operate symmetrically on both sides | |
| CN101977026A (en) | Manufacturing method of cavity-type film bulk acoustic resonator (FBAR) | |
| CN101409536A (en) | Thin-film acoustic resonator and method of producing the same | |
| CN108566177B (en) | Radio frequency resonator and filter | |
| CN203675062U (en) | Film bulk acoustic wave resonator structure | |
| CN114826191B (en) | Film bulk acoustic resonator | |
| CN108696263A (en) | Method resonator structure for manufacturing resonator structure | |
| EP1523097B1 (en) | Air-gap type FBAR, method for fabricating the same, and filter and duplexer using the same | |
| US20060208833A1 (en) | Method of forming film bulk acoustic wave filter assembly | |
| JP2005529535A (en) | Adjustable filter and frequency adjustment method | |
| CN101277099A (en) | Metallic prague sound wave reflector layer structure being suitable for FBAR | |
| CN113659953B (en) | Bulk acoustic wave resonator assembly, manufacturing method and communication device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140416 |
|
| WD01 | Invention patent application deemed withdrawn after publication |