CN102420582A - Structure of surface acoustic wave device on basis of flexible substrate and manufacturing method of surface acoustic wave device - Google Patents
Structure of surface acoustic wave device on basis of flexible substrate and manufacturing method of surface acoustic wave device Download PDFInfo
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Abstract
The invention relates to a surface acoustic wave (Surface Acoustic Wave, SAW) device on the basis of a flexible substrate and a preparation method thereof. The SAW device comprises a substrate, a bottom electrode layer, a piezoelectric layer and a top electrode layer. A working area is formed by the bottom electrode layer, the piezoelectric layer and the top electrode layer. The SAW device is characterized in that the flexible substrate is arranged below the bottom electrode layer; and the flexible substrate is provided with an opening. The SAW device and the preparation method thereof have the characteristics that 1, due to the adoption of the flexible substrate, the obtained device is light, can be mounted on a curved surface, can be continuously produced in a roll-to-roll mode, and has simple manufacturing process and low cost; and 2, the flexible substrate is subjected to reverse side body deep etching to form the opening so that sound waves are spread in the piezoelectric layer in a plate wave mode, a high resonant frequency can be obtained, and meanwhile, the energy of the sound waves is limited in the working area so that a high device Q value can be obtained. Moreover, when a plate wave mode resonator is applied to a liquid sensor, the Q value cannot be reduced due to the radiation of the energy into the liquid.
Description
Technical field
The present invention relates to a kind of SAW device technical field, relate in particular to a kind of structure and manufacturing approach thereof of the SAW device based on flexible substrate.
Background technology
(Surface Acoustic Wave SAW) is a kind of elastic wave of on elastic solid (Hookean body) surface or interface, propagating to surface acoustic wave, and SAW device then is to utilize surface acoustic wave to accomplish the device that various sophisticated signals are handled.Along with semiconductor planar technology, material science, micromachining technology (MEMS), microelectric technique and rapid development of computer technology; The SAW device is widely used in all kinds of dual-use electronic systems such as mobile communication, Aero-Space, radar, electronic countermeasures, remote-control romote-sensing, radio and television, transducer with characteristics such as its miniaturization, multi-functional, high-frequency, high reliability and numeral outputs.
Traditional SAW device all is based on the rigid substrate material, like diamond substrate (patent publication No. CN 1257940A), Sapphire Substrate (patent publication No. CN 101325240A), lithium niobate substrate (patent publication No. CN 1731676A) etc.In these publications, all substrates are hard material, and quality is big; Can not be crooked; So can not takeup type (roll-to-roll) serialization production in the preparation process, the device of preparation can not be installed on the curved surface, and this has greatly limited the production and the purposes of SAW device.
Traditional piezoelectric membrane type SAW device all is to utilize piezoelectric membrane to excite R wave, because the velocity of sound of R wave is lower than symmetrical Lamb wave, so the device resonance frequency of preparing is relatively low, the high-frequency wireless communication that is difficult to adapt in the integrated circuit is used; In addition, when being applied to liquid sensor, because the particle lengthwise movement, energy can be radiated in the liquid based on the transducer of R wave pattern, causes the reduction of Q value.
Organic flexible substrate is different from rigid substrate (like sapphire, diamond etc.); Have material soft, frivolous, can be crooked, can takeup type serialization production etc. advantage, thereby but make SAW device based on flexible substrate have light, soft takeup type serialization to produce, can be installed in advantage such as work on the curved surface.
In addition; After the deep erosion of the flexible substrate back side bulk that has deposited the SAW service area; Can play Lamb wave at the service area underexcitation; The flexible SAW device of Lamb wave pattern has characteristics such as Q value height, resonance frequency height, and it is integrated in flexible circuit board to can be used as HF communication filter and transducer, and when applying to liquid sensor, does not have emittance as the SAW transducer of R wave pattern and the phenomenon that causes the Q value to descend.
Summary of the invention
An object of the present invention is to provide a kind of SAW device based on flexible substrate, another object of the present invention provides the method for making this SAW device.
A kind of SAW device structure based on flexible substrate; Comprise: substrate, bottom electrode layer, piezoelectric layer, top electrode layer; The service area is made up of bottom electrode layer, piezoelectric layer, top electrode layer; It is characterized in that the below of described bottom electrode layer is provided with flexible substrate, flexible substrate is provided with opening.
Described flexible substrate is: the film of any organic material preparation in polyester, polyimides, liquid crystal polymer, PETG, Merlon, polystyrene, polyformaldehyde, polypropylene, polyvinyl chloride, polymethyl methacrylate, polyethylene terephthaldehyde ester, the own diester of polypropylene, polytetrafluoroethylene, acrylonitrile-styrene-butadiene copolymer, polysulfones, the nylon, its thickness is 5～250 μ m.
Described bottom electrode layer is at least: the film that a kind of metal material in aluminium, gold, silver, copper, iron, platinum, titanium, nickel, chromium, tungsten, molybdenum, zinc, cobalt, zirconium, the niobium is processed, the thickness of this film are 10～500 nm.
Described piezoelectric layer is at least: a kind of piezoelectric membrane in zinc oxide, aluminium nitride, the lead zirconate titanate, its thickness are 0.5～10 μ m.
Described piezoelectric layer is at least: the composite film of two kinds of combinations of materials in zinc oxide, aluminium nitride, the lead zirconate titanate, its thickness are 0.5～10 μ m.
Described top electrode layer is made up of interdigital transducer and reflecting grating, and interdigital transducer thickness is 20～500 nm, and reflecting grating thickness is 20～500 nm.
A kind of manufacturing approach of the SAW device structure based on flexible substrate is characterized in that, may further comprise the steps:
prepares top electrode layer: on above-mentioned piezoelectric layer; Through deposit metal electrodes, photoetching, etching, or photoetching, deposit metal electrodes, stripping technology form required electrode layer;
5. back-etching substrate: adopt dry etching method, flexible substrate is carried out back side bulk lose deeply, make the lower surface of bottom electrode layer directly to contact with air.
Described top electrode layer is process plated metal, surface clean oven dry, linging, spin coating photoresist, soft baking, aims at exposure, back baking, development, hard baking, etching, characterization processes flow preparation.
Described top electrode layer is the oven dry of process surface clean, linging, spin coating photoresist, soft baking, aligning exposure, back baking, development, baking firmly, plated metal, stripping technology flow preparation.
Compare with traditional SAW device, the invention has the advantages that: 1. adopt flexible substrate, can the takeup type serialization produce; This flexible substrate SAW device can be prepared into flexible filter, transducer etc.; Be installed on the curved surface and work, expanded the application of traditional SAW device, and can be integrated in the monolithic integrated circuit; As adopt polyimide substrate, can be integrated in the flexible circuit board; 2. flexible substrate being carried out back side bulk loses deeply; Form opening; Make the service area directly contact, can encourage the Lamb wave pattern of piezoelectric membrane, make that the resonance frequency of device is higher with air; Can be applied to high frequency communication system, and when being applied to liquid sensor, can not cause the decline of Q value because of emittance based on the SAW device of Lamb wave pattern; 3. bottom electrode layer can strengthen the exciting field of piezoelectric membrane Lamb wave.
Description of drawings
Fig. 1 is the structural representation of a kind of SAW device based on flexible substrate of the present invention
Fig. 2 is the simulation result of embodiments of the invention 1 device resistance frequency characteristic
The drawing reference numeral explanation: the 1-flexible substrate, the 2-bottom electrode layer, the 3-piezoelectric layer, the 4-top electrode layer, the 4a-interdigital transducer, the 4b-reflecting grating, 5-flexible substrate back side bulk is lost opening deeply.
Embodiment
The present invention proposes a kind of SAW device based on flexible substrate and preparation method thereof, content of the present invention is described below in conjunction with accompanying drawing and embodiment.
Fig. 1 is based on the structural representation of the SAW device of flexible substrate, comprising: 1-flexible substrate, 2-bottom electrode layer, 3-piezoelectric layer, 4-top electrode layer; The service area is made up of bottom electrode layer 2, piezoelectric layer 3, top electrode layer 4.Substrate is a flexible substrate 1; Described bottom electrode layer 2 places flexibility to sink to the bottom on 1, and described piezoelectric layer 3 places on the bottom electrode layer 2, and described top electrode layer 4 is made up of interdigital transducer 4a and reflecting grating 4b; Place on the piezoelectric layer 3, reflecting grating 4b places the both sides of interdigital transducer 4a; Said SAW device loses formation certain opening shape 5 deeply through flexible substrate 1 being carried out back side bulk, makes the lower surface of bottom electrode layer 2 directly contact with air, and acoustic wave energy is limited in the service area.
Described flexible substrate 1 is: the film of any organic material preparation in polyester, polyimides, liquid crystal polymer, PETG, Merlon, polystyrene, polyformaldehyde, polypropylene, polyvinyl chloride, polymethyl methacrylate, polyethylene terephthaldehyde ester, the own diester of polypropylene, polytetrafluoroethylene, acrylonitrile-styrene-butadiene copolymer, polysulfones, the nylon, its thickness is 5～250 μ m.
Described bottom electrode layer 2 is at least: the film that a kind of metal material in aluminium, gold, silver, copper, iron, platinum, titanium, nickel, chromium, tungsten, molybdenum, zinc, cobalt, zirconium, the niobium is processed, and the thickness of this film is 10～500 nm, places on the flexible substrate 1; Bottom electrode layer 2 can increase the exciting field of the Lamb wave of the piezoelectric layer 3 in the service area, makes that the Lamb wave signal is stronger; Bottom electrode layer 2 can also be as flexible substrate 1 transition zone with piezoelectric layer 3 in addition, increase flexible sink to the bottom 1 with the adhesion of piezoelectric layer 3.
Described piezoelectric layer 3 is at least: a kind of piezoelectric membrane in zinc oxide, aluminium nitride, the lead zirconate titanate, place on the bottom electrode layer 2, and its thickness is 0.5～10 μ m.
Described piezoelectric layer 3 is at least: the composite film of two kinds of combinations of materials in zinc oxide, aluminium nitride, the lead zirconate titanate, place on the bottom electrode layer 2, and its thickness is 0.5～10 μ m.
Described top electrode layer 4 is made up of interdigital transducer 4a and reflecting grating 4b, and interdigital transducer 4a is used for encouraging the surface acoustic wave signal, and reflecting grating is used for reducing energy loss, strengthens detectable signal; Interdigital transducer thickness is 20～500 nm, and reflecting grating thickness is 20～500 nm.
Described manufacturing approach based on flexible SAW device may further comprise the steps:
5. back-etching substrate: adopt dry etching method, flexible substrate 1 is carried out back side bulk lose deeply, make the lower surface of bottom electrode layer 2 directly to contact with air; Acoustic wave energy is limited in the service area, increases the Q value of SAW device, directly contact with air owing to bottom electrode layer 2 simultaneously; Like this in the service area; Strengthen the Lamb wave signal, can obtain high-frequency resonant, be applicable to high frequency communication system.
Adopt polyimide substrate as flexible substrate, bottom electrode layer is an aluminum metal layer, and piezoelectric layer is the aluminum nitride piezoelectric film of individual layer; Electrode layer only is provided with interdigital transducer, is 1 input and output fork value electrode pair, and reflecting grating is not set; Because reflecting grating just strengthens the detectable signal of surface acoustic wave; Can not have influence on the excitation of surface acoustic wave, have or not the difference of reflecting grating just to detect the strong and weak difference of signal, so reflecting grating is not set in this emulation.Adopt comsol multiphysics software that embodiment is carried out the finite element simulation analysis, the flexible substrate material that adopts is the thick polyimides of 100 μ m, places the below of bottom electrode layer the right and left, and each 2 μ m is wide; The bottom electrode layer that is adopted is the aluminum metal layer of 100 nm, and width is 20 μ m, the suspension voltage status; Piezoelectric layer is the thick aluminum nitride piezoelectric films of 3 μ m, and periodically width is 20 μ m; Institute's employing interdigital transducer is two aluminium electrodes, a ground connection, and one connects 2 V voltages, and thickness is 150 nm, and electrode width is 5 μ m, and electrode spacing is 5 μ m, corresponding surface acoustic wave cycles 20 μ m.Fig. 2 is the impedance frequency characteristic result with comsol multiphysics software emulation; Can find out that SAW device resonance is at 520 MHz; The symmetrical S0 Lamb wave pattern of corresponding aluminium nitride, its velocity of sound is 10400 m/s, much larger than the velocity of sound of 5700 m/s of aluminium nitride R wave pattern.
Claims (9)
1. SAW device structure based on flexible substrate; Comprise: substrate, bottom electrode layer, piezoelectric layer, top electrode layer; The service area is made up of bottom electrode layer, piezoelectric layer, top electrode layer; It is characterized in that the below of described bottom electrode layer is provided with flexible substrate, flexible substrate is provided with opening.
2. the SAW device structure based on flexible substrate according to claim 1; It is characterized in that; Described flexible substrate is: the film of any organic material preparation in polyester, polyimides, liquid crystal polymer, PETG, Merlon, polystyrene, polyformaldehyde, polypropylene, polyvinyl chloride, polymethyl methacrylate, polyethylene terephthaldehyde ester, the own diester of polypropylene, polytetrafluoroethylene, acrylonitrile-styrene-butadiene copolymer, polysulfones, the nylon, its thickness is 5～250 μ m.
3. the SAW device structure based on flexible substrate according to claim 1; It is characterized in that; Described bottom electrode layer is at least: the film that a kind of metal material in aluminium, gold, silver, copper, iron, platinum, titanium, nickel, chromium, tungsten, molybdenum, zinc, cobalt, zirconium, the niobium is processed, the thickness of this film are 10～500 nm.
4. the SAW device structure based on flexible substrate according to claim 1 is characterized in that described piezoelectric layer is at least: a kind of piezoelectric membrane in zinc oxide, aluminium nitride, the lead zirconate titanate, its thickness are 0.5～10 μ m.
5. the SAW device structure based on flexible substrate according to claim 1 is characterized in that described piezoelectric layer is at least the composite film of two kinds of combinations of materials in zinc oxide, aluminium nitride, the lead zirconate titanate, and thickness is 0.5～10 μ m.
6. the SAW device structure based on flexible substrate according to claim 1 is characterized in that described top electrode layer is made up of interdigital transducer and reflecting grating, and interdigital transducer thickness is 20～500 nm, and reflecting grating thickness is 20～500 nm.
7. the manufacturing approach based on the SAW device structure of flexible substrate is characterized in that, may further comprise the steps:
prepares bottom electrode layer: adopt a kind of method in magnetron sputtering or the method for evaporating directly on flexible substrate, to prepare bottom electrode layer;
5. back-etching substrate: adopt dry etching method, flexible substrate is carried out back side bulk lose deeply, make the lower surface of bottom electrode layer directly to contact with air.
8. the manufacturing approach of the SAW device structure based on flexible substrate according to claim 7; It is characterized in that described top electrode layer is process plated metal, surface clean oven dry, linging, spin coating photoresist, soft baking, aims at exposure, back baking, development, hard baking, etching, characterization processes flow preparation.
9. the manufacturing approach of the SAW device structure based on flexible substrate according to claim 7; It is characterized in that described top electrode layer is the oven dry of process surface clean, linging, spin coating photoresist, soft baking, aligning exposure, back baking, development, baking firmly, plated metal, stripping technology flow preparation.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09116377A (en) * | 1995-10-20 | 1997-05-02 | Fujitsu Ltd | Surface acoustic wave device |
| CN1256809A (en) * | 1998-01-16 | 2000-06-14 | 三菱电机株式会社 | Thin-film pietoelectric element |
| US20050006740A1 (en) * | 2003-07-10 | 2005-01-13 | Fabrice Letertre | Substrate assembly for stressed systems |
| CN101294272A (en) * | 2008-05-27 | 2008-10-29 | 浙江大学 | Method for sputtering and depositing tin indium oxide transparent electroconductive film on flexible substrate at room temperature |
-
2011
- 2011-11-29 CN CN2011103861085A patent/CN102420582A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09116377A (en) * | 1995-10-20 | 1997-05-02 | Fujitsu Ltd | Surface acoustic wave device |
| CN1256809A (en) * | 1998-01-16 | 2000-06-14 | 三菱电机株式会社 | Thin-film pietoelectric element |
| US20050006740A1 (en) * | 2003-07-10 | 2005-01-13 | Fabrice Letertre | Substrate assembly for stressed systems |
| CN101294272A (en) * | 2008-05-27 | 2008-10-29 | 浙江大学 | Method for sputtering and depositing tin indium oxide transparent electroconductive film on flexible substrate at room temperature |
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