CN110601673A - Surface acoustic wave device and film bulk acoustic wave device based on hafnium-based ferroelectric film - Google Patents
Surface acoustic wave device and film bulk acoustic wave device based on hafnium-based ferroelectric film Download PDFInfo
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- CN110601673A CN110601673A CN201910739639.4A CN201910739639A CN110601673A CN 110601673 A CN110601673 A CN 110601673A CN 201910739639 A CN201910739639 A CN 201910739639A CN 110601673 A CN110601673 A CN 110601673A
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 62
- 229910052735 hafnium Inorganic materials 0.000 title claims abstract description 54
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 239000010408 film Substances 0.000 claims abstract description 60
- 239000010409 thin film Substances 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims abstract description 15
- 238000003860 storage Methods 0.000 claims abstract description 14
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 13
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 10
- 238000001914 filtration Methods 0.000 claims abstract description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 25
- 230000015654 memory Effects 0.000 claims description 21
- 239000011787 zinc oxide Substances 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002042 Silver nanowire Substances 0.000 claims description 3
- 239000002041 carbon nanotube Substances 0.000 claims description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 239000002105 nanoparticle Substances 0.000 claims description 3
- 239000002073 nanorod Substances 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 238000012545 processing Methods 0.000 abstract description 12
- 230000010354 integration Effects 0.000 abstract description 10
- 230000009286 beneficial effect Effects 0.000 abstract description 2
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- 230000005540 biological transmission Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
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- 238000005530 etching Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 230000007613 environmental effect Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 230000005515 acousto electric effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007590 electrostatic spraying Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Abstract
The invention discloses a surface acoustic wave device and a film bulk acoustic wave device based on a hafnium-based ferroelectric film, wherein the surface acoustic wave device comprises any one or two of a resonance/filtering component and a sensing component which are integrated on a substrate, and each component respectively comprises a bottom electrode layer, a piezoelectric layer and a top electrode layer which are sequentially stacked; the thin film acoustic wave device comprises any one or two of a resonance/filtering component and a sensing component which are integrated on a substrate, wherein each component comprises a bottom electrode layer, a piezoelectric layer and a top electrode layer which are sequentially stacked; each piezoelectric layer in the two types of acoustic wave devices is respectively prepared by doping a hafnium ferroelectric film with zirconium, aluminum or silicon by using an atomic layer deposition process. The invention can prepare two types of acoustic wave devices and storage devices on the hafnium ferroelectric film, can integrate environment sensing, signal processing and storage, and is beneficial to improving the integration level and the working speed of electronic equipment.
Description
Technical Field
The invention belongs to the technical field of electronics, and particularly relates to a surface acoustic wave device and a film bulk acoustic wave device based on a hafnium ferroelectric film.
Background
With the rapid development of the internet of things technology, intelligent electronic equipment connected to the internet of things senses various information in the environment through various sensors, then sends the sensed information to a processing unit for data analysis, processing and storage, particularly for intelligent driving, the related sensors sense complex road conditions, and the processing and storage of signals are completed while massive road condition information is collected. However, for conventional electronic devices, the environmental sensing, signal processing and data storage are separate and distinct parts, and a data transmission path is required to transmit data, so that the response time of signals is increased, and the operating speed of the related electronic devices is limited. Therefore, if the environment sensing, the signal processing and the information storage can be integrated through the related technical innovation, the signal transmission path can be shortened, the response speed of the intelligent device can be improved, and the device size can be reduced through improving the integration level, and the portability can be improved.
In the aspect of storage, at present, traditional storage media such as RAM, ROM and the like are mainly used, the RAM has high reading and writing speed, but loses data when power is lost; ROM is non-volatile, but cannot be randomly accessed; however, the ferroelectric memory is a random access nonvolatile memory with low power consumption, high read-write speed and strong radiation resistance, so the ferroelectric memory has great development prospect. Among many ferroelectric materials, the hafnium-based ferroelectric thin film has the advantages of compatibility with a silicon-based CMOS process, stable chemical properties, adjustable ferroelectricity, and the like, and has been used for manufacturing ferroelectric memory devices such as capacitors and ferroelectric field effect transistors in ferroelectric random access memories, so that the hafnium-based ferroelectric thin film has great value in the field of ferroelectric memories.
In the aspect of signal processing, resonators and filters based on surface acoustic waves and film bulk acoustic waves have been widely applied to communication devices such as smart phones and mobile base stations, piezoelectric materials used for surface acoustic waves at present mainly comprise bulk materials such as lithium niobate and lithium tantalate and film materials such as aluminum nitride and zinc oxide, and piezoelectric materials used for film bulk acoustic wave devices mainly comprise aluminum nitride and zinc oxide films, wherein lithium niobate, lithium tantalate and zinc oxide cannot be compatible with a mainstream CMOS process, and therefore cannot be integrated with a corresponding chip system; although the aluminum nitride material is compatible with the CMOS process, it cannot be applied to the memory field, and thus system integration cannot be achieved.
In the aspect of environmental sensing, sensors based on surface acoustic wave devices and thin film bulk acoustic wave devices have been widely used in the aspects of detecting temperature, humidity, force, light, chemical gases, etc. due to the advantages of high response speed and high sensitivity, but these sensors based on surface acoustic wave devices and thin film bulk acoustic wave devices are discrete devices, occupy a certain space in the whole system, and require specific interconnection, so that the integration level of the system cannot be further improved.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a surface acoustic wave device and a film bulk acoustic wave device based on a hafnium ferroelectric film. The hafnium ferroelectric film is used as the piezoelectric layer for preparing surface acoustic wave devices and bulk acoustic wave devices, so that the integration of environment sensing, signal processing and storage is realized.
In order to realize the purpose of the invention, the invention provides the following technical scheme:
the invention provides a surface acoustic wave device based on a hafnium film, which is characterized by comprising a substrate, wherein any one or two of a resonance/("/" is understood to be "or") filtering component and a sensing component are arranged on the substrate; the resonance/filtering component comprises a first bottom electrode layer, a first piezoelectric layer and a first top electrode layer which are sequentially stacked on the substrate; the sensing assembly comprises a second bottom electrode layer, a second piezoelectric layer and a second top electrode layer which are sequentially stacked on the substrate; the first top electrode layer comprises a plurality of first interdigital electrodes; the second top electrode layer comprises a sensitive film and a plurality of second interdigital electrodes; each piezoelectric layer is a hafnium-based ferroelectric thin film.
Further, the surface acoustic wave device can be integrated with a memory component; the storage component comprises a third bottom electrode layer, a ferroelectric film and a third top electrode layer which are sequentially stacked on the substrate; the ferroelectric thin film is a hafnium-based ferroelectric thin film.
Further, the types of the surface acoustic wave device include single port resonance, dual port resonance, delay line.
The invention also provides a film bulk acoustic wave device based on the hafnium-based film, which is characterized by comprising a substrate, wherein any one or two of a resonance/("/" is understood as "or") filtering component and a sensing component are arranged on the substrate; the resonance/filtering component comprises a first bottom electrode layer, a first piezoelectric layer and a first top electrode layer which are sequentially stacked on the substrate; the sensing assembly comprises a second bottom electrode layer, a second piezoelectric layer, a second top electrode layer and a sensitive film which are sequentially stacked on the substrate; each piezoelectric layer is a hafnium-based ferroelectric thin film.
Further, the thin film bulk acoustic wave device can be integrated with a memory component; the storage component comprises a third bottom electrode layer, a ferroelectric film and a third top electrode layer which are sequentially stacked on the substrate; the ferroelectric thin film is a hafnium-based ferroelectric thin film.
Further, the types of the thin film bulk acoustic wave device include a back etching type, a surface etching air gap type, and a solid assembly type.
Further, in the surface acoustic wave device or the thin film bulk acoustic wave device, each of the hafnium-based ferroelectric thin films is prepared by doping a hafnium-based ferroelectric thin film with zirconium, aluminum, or silicon, using an atomic layer deposition process; wherein, the doping concentration of zirconium is not more than 50%; the concentration of the doped aluminum is 4.5 to 7.5 percent; the concentration of the doped silicon is 3.5 to 4.5 percent; preferably, the concentration of the doped aluminum is 4.8% -7.1%.
Further, in the surface acoustic wave device or the film bulk acoustic wave device, the sensitive film is prepared by using graphene, a high molecular polymer, a carbon nanotube, a silver nanowire, a zinc oxide nanorod, a zinc oxide nanoparticle or a zinc oxide nanowire.
The invention has the characteristics and beneficial effects that:
according to the technical scheme provided by the invention, the hafnium ferroelectric film grown by atomic layer deposition is used as the piezoelectric layer to prepare the surface acoustic wave device and the film bulk acoustic wave device, and the surface acoustic wave device and the film bulk acoustic wave device can be integrated with the storage part while realizing environment sensing and signal processing, so that the integration level of electronic equipment can be improved, the signal transmission distance can be shortened, the cost can be reduced, the equipment volume can be reduced, and the portability can be improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments of the present invention will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a surface acoustic wave device based on a hafnium-based ferroelectric thin film according to embodiment 1 of the present invention;
FIG. 2 is a microelectronic process flow diagram of a surface acoustic wave device according to embodiment 1 of the present invention;
fig. 3 is a schematic structural diagram of a surface acoustic wave sensor based on a hafnium-based ferroelectric thin film according to embodiment 2 of the present invention;
fig. 4 is an example of integration of a surface acoustic wave resonator, a sensor and a ferroelectric memory cell provided in embodiment 3 of the present invention;
fig. 5 is a schematic structural diagram of a hafnium-based ferroelectric thin film capacitor according to embodiment 3 of the present invention;
fig. 6 is a schematic structural diagram of a thin film bulk acoustic wave device based on a hafnium-based ferroelectric thin film according to embodiment 4 of the present invention;
fig. 7 is a process flow diagram of a back-etched thin film bulk acoustic wave device according to embodiment 4 of the present invention;
fig. 8 is a schematic structural diagram of a thin film bulk acoustic wave device based on a hafnium-based ferroelectric thin film according to embodiment 5 of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. It should be understood that the following examples are illustrative only and are not intended to limit the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Surface acoustic wave device:
example 1
In the present embodiment, there is proposed a single-port resonance type surface acoustic wave device based on a hafnium-based ferroelectric thin film, having a signal processing function, and having a cross-sectional structure as shown in fig. 1, which includes a bottom electrode layer 102, a piezoelectric layer 103, and a top electrode layer 104 stacked in this order on a substrate 101; in the present embodiment, the piezoelectric layer 103 is a hafnium-based ferroelectric thin film doped with zirconium, the top electrode layer 104 is a plurality of interdigital electrodes arranged in sequence, and the corresponding interdigital electrodes form an interdigital transducer and a reflective grid array, respectively.
The preparation process flow of the surface acoustic wave device in the embodiment is shown in fig. 2, and the specific process is as follows:
firstly, sputtering a titanium nitride bottom electrode layer 102 on a substrate 101 in a magnetron sputtering mode, wherein the thickness of the bottom electrode layer is 20nm, and the function is to enable a subsequent hafnium thin film to generate a ferroelectric phase and simultaneously pre-polarize the subsequent thin film; then, a 100nm thick zirconium-doped hafnium oxide film is grown on the bottom electrode layer 102 as the piezoelectric layer 103 by atomic layer deposition, wherein the hafnium-based film has a zirconium concentration of 50% and a molecular formula of Hf0.5Zr0.5O2(ii) a Forming a pattern of interdigital electrodes of the surface acoustic wave device on the surface of the piezoelectric layer 103 by adopting a photoetching mode; by means of electron beam evaporation, metal chromium with a thickness of 5nm is evaporated to be used as an adhesion layer, gold with a thickness of 100nm is evaporated to be used as a top electrode layer 104,wherein the adhesion layer is used for preventing the interdigital electrode from falling off during stripping. And finally, forming an interdigital electrode in a stripping mode to obtain the single-port resonant surface acoustic wave device, wherein the interdigital electrode is used for exciting and detecting the surface acoustic wave, so that the device can work.
Example 2
In this embodiment, a surface acoustic wave device based on a hafnium-based ferroelectric thin film is proposed, which is a delay line type, and is mainly used for realizing a sensing function, and a cross-sectional structure of the device is as shown in fig. 3, and includes a bottom electrode layer 102, a piezoelectric layer 103, and a top electrode layer 104 stacked in this order on a substrate 101, and a sensitive thin film 105 for sensing an environment is further provided on a surface of the piezoelectric layer 103 between the top electrode layers 104 by means of dropping coating, spin coating, electrostatic spraying, chemical solution growth, inkjet printing, or the like, and the sensitive thin film detects an environmental parameter corresponding to a substance in the environment by adsorbing the substance. In the present embodiment, the piezoelectric layer 103 is a hafnium-based ferroelectric thin film doped with silicon, and the doping concentration of silicon is 4%; the top electrode layer 104 is an input interdigital transducer and an output interdigital transducer which are sequentially arranged, each interdigital transducer is composed of a plurality of interdigital electrodes, the sensitive film 105 is arranged between two adjacent interdigital transducers and is a zinc oxide nano-column, when the ultraviolet light intensity changes, a photon-generated carrier can be generated in the zinc oxide nano-column, due to the acoustoelectric effect, the transmission characteristic of the acoustic surface wave can be changed, and ultraviolet light sensing can be realized through the deviation of the working frequency of a testing device and the change of transmission loss.
In another embodiment, the sensitive film adopts polyvinyl alcohol, which can absorb water vapor in the environment, and the more the absorbed water vapor, the larger the quality of the surface deposition of the surface acoustic wave device, so that the transmission condition of the surface acoustic wave on the surface of the device changes, and the detection of the environmental humidity can be realized by testing the deviation of the working frequency and the change of the transmission loss of the device, wherein the growth method of the polyvinyl alcohol is a dripping method, specifically, a polyvinyl alcohol solution with the volume of 5uL is dripped onto the device through a pipetting gun, and the device is placed in a clean room temperature environment for standing, so that the sensitive film can be generated.
Surface acoustic wave devices are used in sensors based primarily on mass deposition effects and acousto-electric effects. The principle of the mass deposition effect is that the sensitive film can adsorb related substances to be detected, so that the quality of the sensitive film is changed, and the transmission condition of the surface acoustic wave is changed, so that the substances to be detected can be sensed through the working frequency deviation and the transmission loss change of a testing device. The main principle of the acoustoelectric effect is that when the external environment changes, electron-hole pairs can be generated inside the sensitive film, which affects the surface acoustic waves transmitted on the surface of the device, so that the working frequency of the device shifts.
The thicknesses of the remaining structural layers in this example are the same as those in example 1.
Example 3
In the present embodiment, an example of device integration is proposed by integrating a surface acoustic wave resonator, a sensor and a ferroelectric memory unit, as shown in fig. 4, including a surface acoustic wave resonator 201, a surface acoustic wave sensor 202, a ferroelectric memory unit (which may be a ferroelectric capacitor) 203 and six MOS field effect transistors (204 to 206, 208 to 210). The surface acoustic wave resonator 201 and the surface acoustic wave sensor 202 of this embodiment can be obtained by the methods in embodiments 1 and 2, where one interdigital transducer in the surface acoustic wave resonator 201 has two terminals, and the interdigital transducers in the surface acoustic wave sensor 202 form two terminals together. The ferroelectric capacitor 203 is used for a memory function, and has a structure as shown in fig. 5, and includes a bottom electrode layer 302, a ferroelectric thin film 303, and a top electrode layer 304 stacked in this order on a substrate 301; the substrate 301 is a silicon substrate, and the bottom electrode layer 302 is formed by sputtering titanium nitride with the thickness of 20nm on the silicon substrate 301 through magnetron sputtering; the ferroelectric thin film 303 is a hafnium-based ferroelectric thin film with a thickness of 20nm and doped with aluminum, the doping concentration of the aluminum is 6%, and the hafnium-based ferroelectric thin film is formed by growing on the surface of the bottom electrode layer 302 by an atomic layer deposition method; the top electrode layer 304 is made of titanium nitride with a thickness of 20nm and is formed on the surface of the ferroelectric thin film 303 by magnetron sputtering. A lead terminal is formed on each of the bottom electrode layer 302 and the top electrode layer 304 of the ferroelectric capacitor 203. First leading-out ends of the surface acoustic wave resonator 201, the surface acoustic wave sensor 202 and the ferroelectric capacitor 203 are respectively connected with one source-drain ends of corresponding MOS field effect transistors (204, 205 and 206), and the other source-drain ends of the three MOS field effect transistors are commonly connected as a first port 207 of the device integration example, which is connected with the outside; second leading-out ends of the surface acoustic wave resonator 201, the surface acoustic wave sensor 202 and the ferroelectric capacitor 203 are respectively connected with one source drain end of one corresponding MOS field effect transistor (208, 209 and 210), and the other source drain ends of the three MOS field effect transistors are commonly connected to serve as a second port 211 of the device integration example, wherein the second port is connected with the outside. Six field effect transistors (204-206, 208-210) connected with the surface acoustic wave resonator 201, the surface acoustic wave sensor 202 and the ferroelectric capacitor 203 are used as gates, and different voltages are applied to the gates of the corresponding field effect transistors, so that the connection of source and drain terminals of the corresponding transistors can be opened or closed, and different devices (201, 202 and 203) are connected with the outside through ports 207 and 211. It should be noted that the surface acoustic wave resonator 201, the surface acoustic wave sensor 202, and the ferroelectric capacitor 203 in this embodiment all share the same substrate, and then the structure layers of each device are formed on the surface of the substrate by the above method, and by the method described in this embodiment, the surface acoustic wave resonator, the sensor, and the ferroelectric memory unit can be integrated.
Furthermore, it is also possible to combine only any two of the surface acoustic wave resonator, the surface acoustic wave sensor, and the ferroelectric memory cell according to the method described in the present embodiment.
Film bulk acoustic wave device
Example 4
In this embodiment, a thin film bulk acoustic wave device based on a hafnium-based ferroelectric thin film is provided, which is of a back etching type and has a signal processing function, and a cross-sectional structure of the thin film bulk acoustic wave device is shown in fig. 6, and includes a bottom electrode layer 403, a piezoelectric layer 404, and a top electrode layer 405 stacked in sequence on a substrate (the substrate is composed of silicon 401 and an insulating support layer 402), and the bottom electrode layer 403, the piezoelectric layer 404, and the top electrode layer 405 are all connected to the insulating support layer 402 in the substrate; the piezoelectric layer 404 is a hafnium-based ferroelectric thin film.
The process flow of the preparation process of the thin film bulk acoustic wave device in the embodiment is shown in fig. 7, and the specific process is as follows:
firstly, growing a layer of silicon dioxide with the thickness of 1um on a silicon substrate 401 as an insulating support layer 402, and preparing a metal aluminum bottom electrode layer 403 with the thickness of 200nm on the insulating support layer 402 in a photoetching, sputtering and stripping mode; adopting an atomic layer deposition mode to grow a layer with the thickness of 20nm, the zirconium-doped concentration of 50 percent and the molecular formula of Hf on the surface of the bottom electrode layer0.5Zr0.5O2The membrane acts as a piezoelectric layer 404; because the bottom electrode layer 403 is completely covered by the piezoelectric layer 404, a bottom electrode through hole 406 is formed in a portion of the piezoelectric layer 404 not covered by the top electrode layer 405 by using a photolithography and etching method, so that a portion of the bottom electrode layer to be connected is exposed, thereby facilitating subsequent testing; then, preparing a top electrode layer 405 of the device on the surface of the piezoelectric layer 404 by adopting the same method and parameters as those for preparing the bottom electrode layer; and after the preparation of the front surface structure of the film bulk acoustic wave device is finished, etching the silicon substrate on the back surface by a dry etching process to obtain the back-etched film bulk acoustic wave device.
Example 5
In this embodiment, a film bulk acoustic wave device based on a hafnium-based ferroelectric film, which is of a back etching type and has a sensing function, is provided based on embodiment 4, and a cross-sectional structure thereof is shown in fig. 8, which is different from embodiment 4 in that a sensitive film 407 is disposed on an upper surface of the top electrode layer 405 by means of dispensing, spin coating, electrostatic spraying or inkjet printing, and specific implementation and functions of the sensitive film are the same as those of embodiment 2, and are not described herein again.
Example 6
An example of integrating a bulk acoustic wave resonator, a bulk acoustic wave sensor, and a ferroelectric memory cell is proposed in the present embodiment. Similar to embodiment 3, this embodiment integrates a bulk acoustic wave resonator, a bulk acoustic wave sensor, and a ferroelectric memory cell on one substrate at the same time, wherein the bulk acoustic wave resonator and the bulk acoustic wave sensor are implemented as described in embodiments 4 and 5, respectively, and the ferroelectric memory cell is implemented as in example 3. The bulk acoustic wave resonator, the bulk acoustic wave sensor, and the ferroelectric memory unit of this embodiment are implemented by respectively leading out a leading-out terminal through the respective top electrode layer and the bottom electrode layer when being connected to the source and drain of the corresponding MOS field effect transistor, which is not described herein again.
The working principle of the invention is as follows:
according to the classification of functional materials, the ferroelectric material belongs to the subclass of piezoelectric materials, so that the hafnium-based ferroelectric thin film inevitably has piezoelectric properties and inverse piezoelectric properties, and surface acoustic wave devices and bulk acoustic wave devices mainly operate by utilizing the piezoelectric and inverse piezoelectric properties of the relevant materials, so that the hafnium-based ferroelectric thin film can be used for surface acoustic wave devices and bulk acoustic wave devices. The hafnium-based thin film can be used for preparing a memory due to the inherent ferroelectric property of the hafnium-based thin film. Therefore, the invention provides a surface acoustic wave device and a film bulk acoustic wave device based on a hafnium-based ferroelectric film, can be integrated with a ferroelectric memory unit, and is expected to be integrated with three types of devices of environment sensing, signal processing and information storage.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A surface acoustic wave device based on hafnium film is characterized in that the device comprises a substrate, wherein any one or two of a resonance/filter component and a sensing component are arranged on the substrate; the resonance/filtering component comprises a first bottom electrode layer, a first piezoelectric layer and a first top electrode layer which are sequentially stacked on the substrate; the sensing assembly comprises a second bottom electrode layer, a second piezoelectric layer and a second top electrode layer which are sequentially stacked on the substrate; the first top electrode layer comprises a plurality of first interdigital electrodes; the second top electrode layer comprises a sensitive film and a plurality of second interdigital electrodes; each piezoelectric layer is a hafnium-based ferroelectric thin film.
2. The surface acoustic wave device according to claim 1, wherein each of the hafnium-based ferroelectric thin films is made of a hafnium-based ferroelectric thin film doped with zirconium, aluminum, or silicon, using an atomic layer deposition process; wherein, the doping concentration of zirconium is not more than 50%; the concentration of the doped aluminum is 4.5 to 7.5 percent; the concentration of the doped silicon is 3.5-4.5%.
3. A surface acoustic wave device as set forth in claim 1, wherein the surface acoustic wave device is capable of being integrated with a memory component; the storage component comprises a third bottom electrode layer, a ferroelectric film and a third top electrode layer which are sequentially stacked on the substrate; the ferroelectric film is a hafnium ferroelectric film; the hafnium-based ferroelectric film is prepared by doping a zirconium, aluminum or silicon-containing hafnium-based ferroelectric film by using an atomic layer deposition process; wherein, the doping concentration of zirconium is not more than 50%; the concentration of the doped aluminum is 4.5 to 7.5 percent; the concentration of the doped silicon is 3.5-4.5%.
4. The surface acoustic wave device according to claim 1, wherein the sensitive film is made of graphene, a high molecular polymer, a carbon nanotube, a silver nanowire, a zinc oxide nanorod, a zinc oxide nanoparticle, or a zinc oxide nanowire.
5. A surface acoustic wave device according to any of claims 1 to 4, wherein the types of surface acoustic wave device comprise single port resonance, two port resonance, delay line.
6. A film bulk acoustic wave device based on hafnium film is characterized in that the device comprises a substrate, wherein either one or two of a resonance/filter component and a sensing component are arranged on the substrate; the resonance/filtering component comprises a first bottom electrode layer, a first piezoelectric layer and a first top electrode layer which are sequentially stacked on the substrate; the sensing assembly comprises a second bottom electrode layer, a second piezoelectric layer, a second top electrode layer and a sensitive film which are sequentially stacked on the substrate; each piezoelectric layer is a hafnium-based ferroelectric thin film.
7. The thin film bulk acoustic wave device according to claim 6, wherein each of the hafnium-based ferroelectric thin films is made of a hafnium-based ferroelectric thin film doped with zirconium, aluminum, or silicon, using an atomic layer deposition process; wherein, the doping concentration of zirconium is not more than 50%; the concentration of the doped aluminum is 4.5 to 7.5 percent; the concentration of the doped silicon is 3.5-4.5%.
8. The thin film bulk acoustic wave device of claim 6, wherein the thin film bulk acoustic wave device is capable of being integrated with a memory component; the storage component comprises a third bottom electrode layer, a ferroelectric film and a third top electrode layer which are sequentially stacked on the substrate; the ferroelectric film is a hafnium ferroelectric film; the hafnium-based ferroelectric film is prepared by doping a zirconium, aluminum or silicon-containing hafnium-based ferroelectric film by using an atomic layer deposition process; wherein, the doping concentration of zirconium is not more than 50%; the concentration of the doped aluminum is 4.5 to 7.5 percent; the concentration of the doped silicon is 3.5-4.5%.
9. The thin film bulk acoustic wave device of claim 6, wherein the sensitive thin film is fabricated using graphene, high molecular polymers, carbon nanotubes, silver nanowires, zinc oxide nanorods, zinc oxide nanoparticles, or zinc oxide nanowires.
10. The thin film bulk acoustic wave device according to any one of claims 6 to 9, wherein types of the thin film bulk acoustic wave device include a back-etched type, a surface-etched air-gap type, and a solid-state mount type.
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| CN112260659A (en) * | 2020-10-26 | 2021-01-22 | 武汉大学 | high-Q-value film bulk acoustic resonator and preparation method thereof |
| CN114112121A (en) * | 2021-11-23 | 2022-03-01 | 中国农业大学 | Online sensitivity-adjustable flexible sensing and storing integrated system and integration method thereof |
| CN114884483A (en) * | 2022-05-09 | 2022-08-09 | 上海芯波电子科技有限公司 | SAW and BAW mixed laminated filter chip and manufacturing process thereof |
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| CN112260659A (en) * | 2020-10-26 | 2021-01-22 | 武汉大学 | high-Q-value film bulk acoustic resonator and preparation method thereof |
| CN114112121A (en) * | 2021-11-23 | 2022-03-01 | 中国农业大学 | Online sensitivity-adjustable flexible sensing and storing integrated system and integration method thereof |
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