CN101593755A - A kind of memory cell based on metal/anti-ferroelectric thin film used/metal oxide/semiconductor field-effect tube structure - Google Patents
A kind of memory cell based on metal/anti-ferroelectric thin film used/metal oxide/semiconductor field-effect tube structure Download PDFInfo
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- 239000012528 membrane Substances 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- CDSUELAXTQWPNC-UHFFFAOYSA-N [Pb].[Hf] Chemical compound [Pb].[Hf] CDSUELAXTQWPNC-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 claims description 2
- ZRDJERPXCFOFCP-UHFFFAOYSA-N azane;iodic acid Chemical compound [NH4+].[O-]I(=O)=O ZRDJERPXCFOFCP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
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- 229910000484 niobium oxide Inorganic materials 0.000 claims description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
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- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- UYLYBEXRJGPQSH-UHFFFAOYSA-N sodium;oxido(dioxo)niobium Chemical compound [Na+].[O-][Nb](=O)=O UYLYBEXRJGPQSH-UHFFFAOYSA-N 0.000 claims description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
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Abstract
The invention belongs to the semiconductor storage unit field, relate to the non-volatile memory device that the non-destructive based on field-effect tube structure reads.Relate in particular to a kind of memory cell, comprising: substrate based on metal/anti-ferroelectric thin film used/metal oxide/semiconductor field-effect tube structure; Metal oxide layer, anti-ferroelectric thin film used, gate electrode; Described metal oxide is placed on half substrate surface; The anti-ferroelectric thin film used surface that places metal oxide layer away from substrate; Gate electrode places anti-ferroelectric thin film used surface away from metal oxide layer; Source, leakage place the semiconductor surface two ends.The present invention adopts the anti-ferroelectric thin film used silica that replaces traditional nonvolatile memory, nitrogen oxide layer, when having the flash memory advantage, programming, sassafras have significantly been improved except that speed, improved retention performance, the needs of memory industrial applications have been satisfied better, fully potential alternative flash memory and being widely used.
Description
Technical field
The invention belongs to the memory device field, relate to the non-volatile memory device that the non-destructive based on field-effect tube structure reads.Relate in particular to a kind of memory cell based on metal/anti-ferroelectric thin film used/metal oxide/semiconductor field-effect tube structure.
Background technology
The product of memory device has occupied 1/4th of whole market in the IT industry, and wherein the development with non-volatile flush memory device FLASH becomes main flow gradually.The advantage of sort memory spare is the storage density height, data reading speed is fast, cost is low, but its shortcoming be data erasable service speed slow (～ms magnitude), voltage height (～7V) and persistence poor (～10
5Circulation), is difficult to substitute fully in the market EEPROM, SRAM and DRAM etc., limited this product development in future.
Flash memory mainly contains two types, and a kind of is floating gate type, and basic structure is metal/silica/metal floating boom/silica/silicon field-effect pipe, and another kind is a charge trap-type, and basic structure is metal/nitrogenize silicon/oxidative silicon/silicon field-effect pipe.The principle of two kinds of device stores, reading of data is consistent, just the former be charge storage in the metal floating boom, and the latter be charge storage in silicon nitride/silicon oxide interface trap.These two kinds of structures all can cause the external electric field of quite a few to be added on the upper strata silica (or silicon nitride) that iunjected charge is not had to help, thereby cause tunnel current to diminish, and have influenced erasable service speed (being generally ~ the ms magnitude).
Summary of the invention
The purpose of this invention is to provide the non-volatile memory device that the non-destructive based on field-effect tube structure reads.Relate in particular to a kind of memory cell based on metal/anti-ferroelectric thin film used/metal oxide/semiconductor field-effect tube structure.
Particularly, the invention provides/metal oxide structures substitutes silica/metal floating boom/silica structure (floating gate type) and the nitrogenize silicon/oxidative silicon structure (charge trap-type) in the flash memory, utilize anti-ferroelectric thin film used under extra electric field electricdomain rapidly counter-rotating cause that polarization intensity increases rapidly, thereby make anti-ferroelectric thin film used electric capacity become big rapidly, so extra electric field almost all is added on the metal oxide layer, the tunnelling current of iunjected charge effect is enlarged markedly, so the programming of metal/anti-ferroelectric thin film used/metal oxide/semiconductor structure compared with flash memory, sassafras removes speed and wants fast a lot.After extra electric field removed, anti-ferroelectric thin film used residual polarization was zero, and initial value can fall in electric capacity again, thereby can not influence moving of device threshold voltage, so can not influence reading of data.Because grid voltage almost all drops to metal oxide layer, the thickness on barrier layer (metal oxide layer) can suitably be thickeied, thereby has strengthened the retention performance of device, and this also is an advantage comparing flash memory.
Metal of the present invention/anti-ferroelectric thin film used/metal oxide/semiconductor field-effect tube structure can significantly improve the speed (can reach～the ns magnitude) of erasable operation when having advantages such as FLASH device stores density height, data reading speed is fast, non-destructive reads, be a kind of quite potential non-volatile type memory device.For realizing above-mentioned target, metal/anti-ferroelectric thin film used/metal oxide/semiconductor field that the present invention proposes comprises: substrate; Metal oxide layer, anti-ferroelectric thin film used, gate electrode;
Described metal oxide is placed on half substrate surface; The described anti-ferroelectric thin film used surface that places metal oxide layer away from substrate; Described gate electrode places anti-ferroelectric thin film used surface away from metal oxide layer; Source, leakage place the semiconductor surface two ends.
As optional technical scheme, described substrate is selected from a kind of in P type silicon, N type silicon, germanium, the GaAs.
As optional technical scheme, described metal oxide is selected from a kind of in aluminium oxide, hafnium oxide, titanium oxide and the niobium oxide.
As optional technical scheme, described metal oxide thickness is 2～30nm.
As optional technical scheme, described reverse ferroelectric film membrane material is selected from a kind of in lead zirconates, hafnium lead plumbate, sodium niobate, ammonium dihydrogen phosphate, ammonium iodate and the tungstic acid.
As optional technical scheme, described reverse ferroelectric film film thickness is 20～300nm.
As optional technical scheme, described gate material is selected from a kind of in polysilicon, platinum, gold, aluminium, iridium, the metal silicide.
Description of drawings
Accompanying drawing 1A is the device architecture schematic diagram of the metal/anti-ferroelectric thin film used/metal oxide/P type silicon field-effect pipe of programming process.
Electron tunneling was by metal oxide layer, at the captive energy band diagram of anti-ferroelectric thin film used/metal oxide interface when accompanying drawing 1B was programming.
Accompanying drawing 2A is the device architecture schematic diagram of sassafras metal/anti-ferroelectric thin film used/metal oxide/P type silicon field-effect pipe of removing process.
Accompanying drawing 2B be sassafras when removing tunneled holes by metal oxide layer, with the energy band diagram of electron recombination process in anti-ferroelectric thin film used/metal oxide interface.
Accompanying drawing 3 is that the drain current characteristics of metal/anti-ferroelectric thin film used/metal oxide/P type silicon field-effect pipe and sassafras remove and programming back variations in threshold voltage figure.
Embodiment
Elaborate below in conjunction with the embodiment of accompanying drawing to metal provided by the invention/anti-ferroelectric thin film used/metal oxide/semiconductor field memory device.
Embodiment 1
The preparation technology of metal/anti-ferroelectric thin film used/metal oxide/silicon field-effect pipe is compatible fully with existing MOSFET (metal/oxide/silicon field-effect pipe) technology, wherein source, drain electrode can realize that metal oxide layer more can be used atomic layer deposition (ALD) and the growth of physical vapor deposition (PVD) technology according to the difference of thickness with the mode that ion injects or spreads.Anti-ferroelectric thin film used metal organic chemical vapor deposition (MOCVD), magnetron sputtering, the pulsed laser deposition methods such as (PLD) can used prepares, and gate electrode can be used technologies growths such as chemical vapor deposition (CVD), magnetron sputtering, electron beam evaporation.
The effect of metal oxide mainly contains three: one, provide a good substrate (anti-ferroelectric thin film used be difficult at silicon substrate be direct deposit) for anti-ferroelectric thin film used deposit; Two, anti-ferroelectric thin film used/metal oxide structures plays tunnel switch; Three, metal oxide generally is a high dielectric constant material, can prevent that also the back of the body tunnelling of iunjected charge is to store electric charge better under thin thickness.
Anti-ferroelectric thin film used/metal oxide structures tunnel switch principle: under certain extra electric field (required electric field level is relevant with the reverse ferroelectric film film thickness), part electricdomain counter-rotating (time is at nanosecond order) rapidly in anti-ferroelectric thin film used, anti-ferroelectric thin film used polarization intensity also increases thereupon, thereby open the conductive channel of metal oxide layer, electric charge can be injected into anti-ferroelectric thin film used/metal oxide interface; After extra electric field was removed, Fan Zhuan electricdomain can promptly return to state (also being nanosecond order) at the beginning again just now, and anti-ferroelectric thin film used polarization intensity levels off to zero, and the conductive channel of metal oxide layer is closed, and electric charge can not pass through metal oxide layer again.Because anti-ferroelectric thin film used domain reversal very fast (nanosecond order), the ON state of metal oxide layer and OFF state all are (nanosecond orders) that can reach rapidly.
The memory device of metal/anti-ferroelectric thin film used/metal oxide/semiconductor field-effect tube structure changes threshold voltage by trap-charge and then influences the purpose that the channel current size reaches the storage data.Memory unit needs programming (writing), wipes, reads process, below the present invention be that the metal/anti-ferroelectric thin film used/metal oxide/P-Si field effect transistor of substrate is that example is done explanation and compared with the FLASH device with P type silicon:
Programming (writing) process: as shown in Figure 1, be that example illustrates the programming machine reason with the metal/anti-ferroelectric thin film used/metal oxide/P-Si structure of P type silicon substrate.Add forward bias (required size depends on anti-ferroelectric thin film used and thickness metal oxide layer) on the metal gate, reverse ferroelectric film membrane portions electricdomain is reversed, it is big that polarization intensity becomes, metal oxide layer conducting simultaneously, electronics passes metal oxide layer and is injected into anti-ferroelectric thin film used/metal oxide interface from P type silicon substrate, thereby and can be captured by the trap in the interface and be stored in anti-ferroelectric thin film used/metal oxide interface.Electronics is the Fowler-Nordheim tunnelling current by the electric current that metal oxide layer forms.
The write operation of charge trap-type device MNOS among metal/anti-ferroelectric thin film used/metal oxide/semiconductor structure and the FLASH (metal/nitrogenize silicon/oxidative silicon/silicon) is similar, all be to come trap-charge with Fowler-Nordheim tunnelling current mechanism, but the former is more a lot of soon than the latter's writing speed, and reason is as follows:
The formula of Fowler-Nordheim tunnelling current is:
Wherein E is the electric field on the metal oxide, C
1, C
2Be constant (numerical value and substrate, anti-ferroelectric thin film used, the thickness of metal oxide layer, material relevant).In the MNOS structure, the electric field of supposing to be added on the metal gate is the E grid, and silicon nitride can be regarded two electric capacity of connecting as with silica, and the electric field of establishing on the silicon nitride is E
1, the electric field on the silica is E
2, E grid=E
1+ E
2, E
1And E
2Value and C
1And C
2Value be inversely proportional to, promptly the dielectric constant with respective material is inversely proportional to, the dielectric constant of silicon nitride is 7.8, the dielectric constant of silica is 3.9, so can get E
2=2E
1=2/3E grid this shows that 1/3 grid voltage has been added on the silicon nitride, and this part electric field is to not contribution of tunnelling current (the tunnelling current size is only relevant with electric field on the silica).See metal/anti-ferroelectric thin film used/metal oxide/semiconductor structure again, the electric field that adds on the same hypothesis metal gate is the E grid, because the special nature of antiferroelectric materials, in domain reversal, it is very big that polarization intensity can become, according to the knowledge of dielectric physics
D＝εoE+P＝εoεrE (2)
Wherein D is electric displacement, the P polarization intensity, and ε o is a permittivity of vacuum, ε r is a relative dielectric constant.When polarization intensity becomes big, anti-ferroelectric thin film used dielectric coefficient will become greatly and (approximately become greater to several thousand even up to ten thousand from tens), thereby make anti-ferroelectric thin film used electric capacity significantly become big, because the dielectric constant of metal oxide generally has only a few to tens of, so at this moment anti-ferroelectric thin film used electric capacity will be far longer than the electric capacity of metal oxide layer, this moment, the E grid almost all were added on the metal oxide layer, under identical grid voltage, electric field on the metal oxide layer is 1.5 times on the silica, by (1) formula as can be known tunnelling current have significant increase.Tunnelling current greatly just means that the electric charge that just can inject equivalent amount in the short period is that writing speed accelerates.
Sassafras removes process: as shown in Figure 2, the mechanism that sassafras removes is similar with programming mechanism, just injecting the electric charge of opposite polarity, is exactly that the electron recombination in hole and the interface trap reaches the purpose that sassafras removes toward anti-ferroelectric thin film used/metal oxide bed boundary injected hole with precedent.The same Fowler-Nordheim of the being tunnelling with electronics of mechanism of metal oxide layer is passed in the hole, so in like manner as can be known, metal/anti-ferroelectric thin film used/metal oxide/semiconductor structure is faster than the erase process of FLASH device.
Read process: as shown in Figure 3, if the electric charge that is stored in anti-ferroelectric thin film used/metal oxide bed boundary is Q, its value equals the integration of injection current, according to the theory of semiconductor device physics, charge stored Q can cause moving of device threshold voltage, and amount of movement is:
C wherein
nFor the grid electric field is removed the anti-ferroelectric thin film used capacitance in back.The amount of movement of this threshold voltage can be by I
D-V
GCurve is directly measured, and also available leakage conductance is measured.Variations in threshold voltage can cause the variation of channel conduction, after stored charge is Q (this example is negative electrical charge), and g
D(or I
D)-V
GThe curve Δ V that moves right
T
Adding a voltage in two threshold voltage intervals on the metal gate during reading of data, if do not have stored charge (" 0 " attitude) this moment, then device is in cut-off region, and conducting channel does not form, and the electric current between leak in the source is zero; If have stored charge (one state) this moment, then silicon face is in the strong inversion district, and conducting channel forms, and the electric current between leak in the source is I
D(I
DValue is relevant with grid voltage and threshold voltage).Size by electric current between the leakage of differentiation source is come the decision logic value, and in precedent, what there was electric current in the source between leaking is the logical zero attitude, and current value is that zero (or very little) is the logical one attitude.
For memory device, data retention characteristics is a very important index.The dielectric constant on the barrier layer that charge-retention property and device are used relevant with thickness (dielectric constant is big more, thickness is thick more then is not easy electric leakage more, and retention performance is just good more).Now along with the dwindling of device size, using high dielectric constant material to replace silica has been a kind of trend.And metal oxide layer is exactly a high dielectric constant material, under the identical situation of dielectric constant, because the voltage of anti-ferroelectric thin film used/metal oxide layer all falls on metal oxide layer, so relatively with the FLASH device, under the identical voltage condition of needs, the thickness on barrier layer just can be thicker, and retention performance will be better.
Comprehensive the foregoing description, as memory device, compare with the FLASH device, the programming of metal/anti-ferroelectric thin film used/metal oxide/semiconductor field-effect tube structure (writing), sassafras remove speed and are significantly increased, retention performance can be better than FLASH device, and the advantage of FLASH device, metal/anti-ferroelectric thin film used/metal oxide/semiconductor field effect tube possesses equally, so metal/anti-ferroelectric thin film used/metal oxide/semiconductor field effect tube can have very big potentiality in the memory device field.
Claims (7)
1, based on the memory cell of metal/anti-ferroelectric thin film used/metal oxide/semiconductor field-effect tube structure, it is characterized in that, comprising: substrate; Metal oxide layer, anti-ferroelectric thin film used, gate electrode;
Described metal oxide is placed on substrate surface;
The described anti-ferroelectric thin film used surface that places metal oxide layer away from substrate;
Described gate electrode places anti-ferroelectric thin film used surface away from metal oxide layer.
By profit requirement 1 described memory cell, it is characterized in that 2, described substrate is selected from a kind of in P type silicon, N type silicon, germanium, the GaAs based on metal/anti-ferroelectric thin film used/metal oxide/semiconductor field-effect tube structure.
By profit requirement 1 described memory cell, it is characterized in that 3, described metal oxide is selected from a kind of in aluminium oxide, hafnium oxide, titanium oxide and the niobium oxide based on metal/anti-ferroelectric thin film used/metal oxide/semiconductor field-effect tube structure.
4, by profit requirement 1 described memory cell, it is characterized in that described metal oxide thickness is 2～30nm based on metal/anti-ferroelectric thin film used/metal oxide/semiconductor field-effect tube structure.
5, by profit requirement 1 described memory cell based on metal/anti-ferroelectric thin film used/metal oxide/semiconductor field-effect tube structure, it is characterized in that described reverse ferroelectric film membrane material is selected from a kind of in lead zirconates, hafnium lead plumbate, sodium niobate, ammonium dihydrogen phosphate, ammonium iodate and the tungstic acid.
6, by profit requirement 1 described memory cell, it is characterized in that described reverse ferroelectric film film thickness is 20～300nm based on metal/anti-ferroelectric thin film used/metal oxide/semiconductor field-effect tube structure.
By profit requirement 1 described memory cell, it is characterized in that 7, described gate material is selected from a kind of in polysilicon, platinum, gold, aluminium, iridium, the metal silicide based on metal/anti-ferroelectric thin film used/metal oxide/semiconductor field-effect tube structure.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104299956A (en) * | 2013-07-15 | 2015-01-21 | 格罗方德半导体公司 | Complex circuit element and capacitor utilizing CMOS compatible antiferroelectric high-K materials |
| CN107146793A (en) * | 2016-03-01 | 2017-09-08 | 纳姆实验有限责任公司 | Application of the antiferroelectric class material in nonvolatile semiconductor memory member |
| CN110601673A (en) * | 2019-08-12 | 2019-12-20 | 清华大学 | Surface acoustic wave device and film bulk acoustic wave device based on hafnium-based ferroelectric film |
| CN111799275A (en) * | 2020-06-30 | 2020-10-20 | 湘潭大学 | Memory unit, memory and preparation method of memory |
| CN113782607A (en) * | 2021-08-25 | 2021-12-10 | 中国科学院微电子研究所 | Ferroelectric field effect transistor, preparation method thereof and ferroelectric memory device |
| US11527646B2 (en) | 2019-09-24 | 2022-12-13 | Samsung Electronics Co., Ltd. | Domain switching devices and methods of manufacturing the same |
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2009
- 2009-06-17 CN CN2009100532021A patent/CN101593755B/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104299956A (en) * | 2013-07-15 | 2015-01-21 | 格罗方德半导体公司 | Complex circuit element and capacitor utilizing CMOS compatible antiferroelectric high-K materials |
| CN107146793A (en) * | 2016-03-01 | 2017-09-08 | 纳姆实验有限责任公司 | Application of the antiferroelectric class material in nonvolatile semiconductor memory member |
| CN107146793B (en) * | 2016-03-01 | 2022-02-15 | 纳姆实验有限责任公司 | Application of antiferroelectric material in nonvolatile memory device |
| CN110601673A (en) * | 2019-08-12 | 2019-12-20 | 清华大学 | Surface acoustic wave device and film bulk acoustic wave device based on hafnium-based ferroelectric film |
| CN110601673B (en) * | 2019-08-12 | 2021-08-13 | 清华大学 | Surface acoustic wave device and film bulk acoustic wave device based on hafnium-based ferroelectric film |
| US11527646B2 (en) | 2019-09-24 | 2022-12-13 | Samsung Electronics Co., Ltd. | Domain switching devices and methods of manufacturing the same |
| CN111799275A (en) * | 2020-06-30 | 2020-10-20 | 湘潭大学 | Memory unit, memory and preparation method of memory |
| CN113782607A (en) * | 2021-08-25 | 2021-12-10 | 中国科学院微电子研究所 | Ferroelectric field effect transistor, preparation method thereof and ferroelectric memory device |
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| Publication number | Publication date |
|---|---|
| CN101593755B (en) | 2012-02-01 |
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