CN110658256A - Ultrahigh-sensitivity resonant surface acoustic wave sensor based on electrode mass load effect - Google Patents
Ultrahigh-sensitivity resonant surface acoustic wave sensor based on electrode mass load effect Download PDFInfo
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Classifications
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/02—Analysing fluids
- G01N29/022—Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
- G01H11/06—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means
- G01H11/08—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means using piezoelectric devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
- G01N29/041—Analysing solids on the surface of the material, e.g. using Lamb, Rayleigh or shear waves
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
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- G—PHYSICS
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Abstract
The invention provides an ultrahigh-sensitivity resonant surface acoustic wave sensor based on an electrode mass load effect, which sequentially comprises the following sensor structures from bottom to top: compared with the traditional sensitive area in the middle area of sound wave propagation of the double-end interdigital electrode, the sensitive area is arranged above the interdigital electrode, so that the more obvious mass load effect on the interdigital electrode can be utilized, the resonance frequency of the surface acoustic wave device is shifted more greatly when mass load exists, and the sensitivity of the sensor is higher. The wavelength of the interdigital electrode is 120 nm-40 mu m, and the metallization rate is 0.1-0.9. The invention has the following beneficial effects: ultrahigh sensitivity, easy detection and simple process.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to a surface acoustic wave sensor in the acoustic technology, in particular to an ultrahigh-sensitivity resonant surface acoustic wave sensor based on an electrode mass load effect and used for sensing.
[ background of the invention ]
Surface Acoustic Wave (SAW) sensors belong to piezoelectric detectors, and have the advantages of high sensitivity, small size, relatively simple design, low preparation cost and the like compared with other types such as piezoresistive and capacitive detectors. The surface acoustic wave sensor is further divided into: SAW delay line type and SAW resonator type. The SAW delay line type structurally comprises a sensing area with a large area, wherein the sensing area is located on an SAW propagation channel, but the loss is large, and the stability is poor; the SAW resonator has the advantages of compact structure, high Q value, low loss and good stability. In a traditional resonator type surface acoustic wave sensor, a sensing area is arranged in a middle acoustic wave propagation area (double-end pair resonator) of a double-end interdigital transducer or two sides (single-end pair resonator) of a single-end interdigital transducer, when mass load exists, the resonance frequency of the SAW sensor is reduced, but the general offset is small, and the sensor sensitivity is low. The invention provides an ultrahigh-sensitivity resonant surface acoustic wave sensor based on an electrode mass loading effect, wherein a sensing area is right above an interdigital electrode, and the sensing form can be that a measured object is directly deposited on the interdigital electrode or a sensitive layer is modified on the interdigital electrode and is sensitive to the measured object. Compared with an acoustic wave propagation region, the mass loading effect of the SAW interdigital electrode is obvious, so that the mass sensitivity is higher, and the high-precision sensing requirements in the fields of biology, chemistry and medicine can be met.
[ summary of the invention ]
The invention aims to disclose an ultra-high sensitivity resonant surface acoustic wave sensor based on an electrode mass load effect, which utilizes the electrode mass load effect to enable SAW to have higher sensing sensitivity.
In order to achieve the purpose, the technical scheme of the invention is as follows:
an ultra-high sensitivity resonant surface acoustic wave sensor based on an electrode mass loading effect comprises a substrate 1, wherein an interdigital electrode 2 is arranged in the middle above the substrate 1, and two sides of the interdigital electrode are respectively provided with a reflection grid 4, and the ultra-high sensitivity resonant surface acoustic wave sensor is characterized in that a sensing area 3 is arranged right above the interdigital electrode 2; the interdigital electrode 2 is a uniform interdigital electrode, the wavelength is 120 nm-40 mu m, the metallization rate is 0.1-0.9: the sensing area 3 is a sensitive layer sensitive to the measured object or an area for depositing the measured object; the substrate 1 is a piezoelectric substrate or a piezoelectric film 6 is closely fixed on the top of the piezoelectric substrate.
In a further improvement, a piezoelectric film 6 is closely fixed on the top of the substrate 1, and the interdigital electrode 2 and the reflective grid are both arranged above the piezoelectric film 6.
In a further improvement, the piezoelectric substrate is any one of quartz, piezoelectric ceramics, lithium niobate, lithium tantalate, lithium tetraborate, bismuth germanate, bismuth silicate, aluminum orthophosphate, potassium niobate and langasite crystals.
In a further improvement, the uniform interdigital electrode is a single-end resonance type uniform interdigital electrode and/or a double-end pair resonance type uniform interdigital electrode, and the reflective grid is an open-circuit reflective grid or a short-circuit reflective grid.
In a further improvement, the substrate is any one of a hard substrate of silicon, glass, sapphire and diamond, or a flexible substrate of polyimide, polyethylene terephthalate, polydimethylsiloxane, silicon rubber and flexible glass.
In a further improvement, the piezoelectric film 6 is made of any one of zinc oxide, aluminum nitride, gallium nitride, lithium niobate, lithium tantalate, potassium niobate, tantalum pentoxide and lead zirconate titanate, and the thickness is 100nm to 6000 nm.
In a further improvement, the interdigital electrode 2 is made of any one or more of aluminum, gold, silver, copper, chromium, molybdenum, nickel, titanium, tungsten, aluminum-doped zinc oxide or indium oxide, silver nanowires, molybdenum disulfide and graphene, and the thickness of the interdigital electrode is 1-1000 nm.
Compared with the traditional SAW sensitive area in the acoustic wave propagation middle area of the double-end interdigital electrode, the resonant surface acoustic wave sensor based on the electrode mass load effect has more obvious effect of mass load effect and higher sensor sensitivity.
[ description of the drawings ]
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below. The drawings in the following description are only some embodiments of the invention and other drawings may be derived by those skilled in the art without inventive effort, wherein:
FIG. 1 is a schematic structural diagram of an ultra-high sensitivity resonant surface acoustic wave sensor based on an electrode mass loading effect according to the present invention;
fig. 2 is a comparison diagram of a sensitive area of an ultra-high sensitivity resonant surface acoustic wave sensor based on an electrode mass loading effect according to an embodiment of the present invention and a sensitive area of a conventional SAW sensor.
Fig. 3 is a graph of normalized admittance (Y11) before and after loading the same mass load of the conventional double-end-pair resonant surface acoustic wave sensor and the ultra-high sensitivity resonant surface acoustic wave sensor based on the electrode mass load effect according to the embodiment of the present invention.
[ detailed description ] embodiments
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, the present invention provides a resonant surface acoustic wave sensor with ultra-high sensitivity based on the electrode mass loading effect. When the surface acoustic wave sensor adopts a piezoelectric substrate type structure, the structure is sequentially from bottom to top: the piezoelectric substrate 1, the interdigital electrode 2 and the sensing area 3, and the SAW reflecting grating 4 are arranged on two sides of the interdigital electrode 2; when the surface acoustic wave sensor adopts a piezoelectric film type structure, the structure is sequentially from bottom to top: the sensor comprises a substrate 5, a piezoelectric film 6, interdigital electrodes 2 and a sensing area 3; the SAW reflecting grids 4 are arranged on two sides of the interdigital electrode 2; the piezoelectric substrate 1 is a hard substrate and is made of any one of quartz, piezoelectric ceramics, lithium niobate, lithium tantalate, lithium tetraborate, bismuth germanate, bismuth silicate, aluminum orthophosphate, potassium niobate and langasite crystals. The interdigital electrode 2 is a uniform interdigital electrode, the wavelength is 120 nm-40 mu m, the metallization rate is equal, and the metallization rate is 0.1-0.9. The interdigital electrode 2 is divided into a single-end resonance type and a double-end pair resonance type. The interdigital electrode 2 is made of any one material or a composite material of aluminum, gold, silver, copper, chromium, molybdenum, nickel, titanium, tungsten, aluminum-doped zinc oxide or indium oxide, silver nanowires, molybdenum disulfide and graphene, and the thickness of the interdigital electrode is 1-1000 nm. Compared with the traditional SAW sensitive area in the middle area of the acoustic wave propagation of the double-end interdigital electrode, the sensing area 3 has more obvious effect of mass load effect and higher sensitivity of the sensor. The sensing form of the sensing area 3 can be that the measured substance is directly deposited on the interdigital electrode, or a sensitive layer is decorated on the interdigital electrode and is sensitive to the measured substance. The reflective grating 4 is an open-circuit reflective grating or a short-circuit reflective grating. The substrate 5 is made of any one of hard substrates of silicon, glass, sapphire and diamond, or is made of any one of flexible substrates of polyimide, polyethylene terephthalate, polydimethylsiloxane, silicon rubber and flexible glass. The piezoelectric thin film material 6 is any one of zinc oxide, aluminum nitride, gallium nitride, lithium niobate, lithium tantalate, potassium niobate, tantalum pentoxide and lead zirconate titanate, and has a thickness of 100 nm-6000 nm.
The following describes in detail an ultra-high sensitivity resonant surface acoustic wave sensor based on the electrode mass loading effect according to the present invention in specific embodiment 1.
Example 1
An ultra-high sensitivity resonant surface acoustic wave sensor based on electrode mass load effect adopts a piezoelectric substrate type junction double-end-to-resonant SAW structure, and a piezoelectric substrate 1 adopts 128-degree YX LiNbO3The material is that the interdigital electrode 2 is made of gold (Au), the thickness of the interdigital electrode 2 is 12nm, and the wavelength lambda of the SAW device is 800 nm.
Fig. 2 is a comparison diagram of a sensitive area of an ultra-high sensitivity resonant surface acoustic wave sensor based on an electrode mass loading effect according to an embodiment of the present invention and a sensitive area of a conventional SAW sensor.
FIG. 3 is a comparison graph of the simulation of the frequency shift of the ultra-high sensitivity resonant SAW sensor based on the electrode mass loading effect provided by the embodiment of the invention and the conventional SAW sensor when the mass load 712.22pg is applied
As shown in fig. 3, the present embodiment provides an ultra-high sensitivity resonant surface acoustic wave sensor based on the electrode mass loading effect, when the mass load applied to the interdigital electrode is 712.22pg (picogram), the center resonance frequency is shifted from 4.6115GHz to 3.9045GHz, and the sensor sensitivity is 1.007383pg/MHz, whereas when the same load mass is loaded on the conventional SAW sensor, the center resonance frequency is shifted from 4.6490GHz to 4.6445GHz, and the sensor sensitivity is 158.2711 pg/MHz. It can be seen that the sensitivity of the ultra-high sensitivity resonant SAW sensor based on the electrode mass loading effect provided by the embodiment of the invention is far higher than that of the existing traditional mass sensor.
Although the embodiments of the present invention have been disclosed above, the sensing parameter is not only mass sensing, but may be gas sensing, humidity sensing, chemical sensing, and biological sensing.
While embodiments of the invention have been disclosed above, it is not limited to the applications set forth in the specification and the embodiments, which are fully applicable to various fields of endeavor for which the invention pertains, and further modifications may readily be made by those skilled in the art, it being understood that the invention is not limited to the details shown and described herein without departing from the general concept defined by the appended claims and their equivalents.
Claims (7)
1. An ultra-high sensitivity resonant surface acoustic wave sensor based on an electrode mass loading effect comprises a substrate (5), wherein an interdigital electrode (2) is arranged in the middle above the substrate (5), and reflecting grids (4) are respectively arranged on two sides of the interdigital electrode, and the ultra-high sensitivity resonant surface acoustic wave sensor is characterized in that a sensing area (3) is arranged right above the interdigital electrode (2); the interdigital electrode (2) is a uniform interdigital electrode, the wavelength is 120 nm-40 mu m, the metallization rate is 0.1-0.9: the sensing area (3) is a sensitive layer sensitive to the measured object or an area for depositing the measured object; the substrate (5) is a piezoelectric substrate (1) or a piezoelectric film (6) is closely fixed on the top of the substrate.
2. The resonant surface acoustic wave sensor with ultra-high sensitivity based on the electrode mass loading effect as claimed in claim 1, wherein the top of the substrate (5) is closely adjacent to and fixed with a piezoelectric film (6), and the interdigital electrode (2) and the reflection gate are both above the piezoelectric film (6).
3. The resonant surface acoustic wave sensor with ultra-high sensitivity based on the electrode mass loading effect as claimed in claim 1, wherein the piezoelectric substrate is any one of quartz, piezoelectric ceramic, lithium niobate, lithium tantalate, lithium tetraborate, bismuth germanate, bismuth silicate, aluminum orthophosphate, potassium niobate, langasite crystals.
4. The surface acoustic wave sensor with ultra-high sensitivity resonance based on electrode mass loading effect as claimed in claim 1, wherein the uniform interdigital electrode is a single-ended resonance type uniform interdigital electrode and/or a double-ended pair resonance type uniform interdigital electrode, and the reflective grating is an open-circuit reflective grating or a short-circuit reflective grating.
5. The resonant surface acoustic wave sensor with ultra-high sensitivity based on the electrode mass loading effect as claimed in claim 1, wherein the substrate is any one of a rigid substrate of silicon, glass, sapphire and diamond, or a flexible substrate of polyimide, polyethylene terephthalate, polydimethylsiloxane, silicon rubber and flexible glass.
6. The resonant surface acoustic wave sensor with ultra-high sensitivity based on electrode mass loading effect as claimed in claim 1, wherein the piezoelectric film (6) is made of any one of zinc oxide, aluminum nitride, gallium nitride, lithium niobate, lithium tantalate, potassium niobate, tantalum pentoxide and lead zirconate titanate, and has a thickness of 100nm to 6000 nm.
7. The resonant surface acoustic wave sensor with ultra-high sensitivity based on the electrode mass loading effect as claimed in claim 1, wherein the interdigital electrode (2) is made of one or more materials selected from aluminum, gold, silver, copper, chromium, molybdenum, nickel, titanium, tungsten, aluminum-doped zinc oxide or indium oxide, silver nanowire, molybdenum disulfide and graphene, and has a thickness of 1nm to 1000 nm.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111593332A (en) * | 2020-06-24 | 2020-08-28 | 湖南中大检测技术集团有限公司 | Method for sputtering and depositing piezoelectric film on flexible glass |
| CN111697943A (en) * | 2020-07-02 | 2020-09-22 | 电子科技大学 | High-frequency high-coupling-coefficient piezoelectric film bulk acoustic resonator |
| CN112179981A (en) * | 2020-09-30 | 2021-01-05 | 湖南大学 | Surface acoustic wave sensor |
| CN112729595A (en) * | 2021-02-02 | 2021-04-30 | 上海航天电子有限公司 | Delay line type surface acoustic wave sensor and manufacturing method thereof |
| CN114337583A (en) * | 2021-12-03 | 2022-04-12 | 中国科学院上海微系统与信息技术研究所 | Acoustic surface wave resonator |
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| CN111697943A (en) * | 2020-07-02 | 2020-09-22 | 电子科技大学 | High-frequency high-coupling-coefficient piezoelectric film bulk acoustic resonator |
| CN111697943B (en) * | 2020-07-02 | 2023-09-22 | 电子科技大学 | High-frequency high-coupling coefficient piezoelectric film bulk acoustic resonator |
| CN112179981A (en) * | 2020-09-30 | 2021-01-05 | 湖南大学 | Surface acoustic wave sensor |
| CN112729595A (en) * | 2021-02-02 | 2021-04-30 | 上海航天电子有限公司 | Delay line type surface acoustic wave sensor and manufacturing method thereof |
| CN114337583A (en) * | 2021-12-03 | 2022-04-12 | 中国科学院上海微系统与信息技术研究所 | Acoustic surface wave resonator |
| CN114337583B (en) * | 2021-12-03 | 2024-03-29 | 中国科学院上海微系统与信息技术研究所 | Surface acoustic wave resonator |
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