CN104301839B - MEMS, interface circuit and preparation method thereof - Google Patents
MEMS, interface circuit and preparation method thereof Download PDFInfo
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/50—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
Abstract
According to an embodiment of the invention, a kind of MEMS (MEMS) device, including：First plate；Second plate, it is arranged in above first plate；With the first movable panel, it is arranged between first plate and second plate.MEMS further comprises：Second movable panel, it is arranged between first movable panel and second plate.
Description
The cross reference of related application
The U.S. Provisional Application No.61/847 submitted this application claims on July 18th, 2013,874 priority, leads to here
Reference is crossed to be incorporated into herein.
Technical field
This patent disclosure relates generally to MEMS (MEMS) device, and relate more specifically to MEMS, interface circuit
And preparation method thereof.
Background technology
The sensor based on MEMS (MEMS) of such as microphone etc is come from by measuring physical phenomenon collection
The information of environment.Then the signal message that electronic equipment processing obtains from sensor, despite the presence of noise and ghost effect.Favorably
, MEMES devices can be manufactured using similar to for batch manufacturing technology of integrated circuit.Therefore, can be with relatively low
Cost by feature, reliability and elegance be integrated on small silicon.
MEMS can be formed as oscillator, resonator, accelerator, gyroscope, pressure sensor, microphone, micro mirror
Deng.MEMS typically measures physical phenomenon to be measured using capacitive sensing technology.In all these applications, use
The capacitance variations of capacitance type sensor are converted into voltage available by interface circuit.However, in the sense that ghost effect be present and reduce
Because the miniaturization of sensor causes interface circuit to become more and more challenging in the case of survey electric capacity.
Some key characteristics of MEMS include sensitivity, bandwidth, the linearity, dynamic range, minimum detectable signal,
Stability, size and cost.Input physical phenomenon that change for electric capacity at capacitance type sensor is brought (such as when transformation
Power) for, the sensitivity of MEMS is the change of output voltage.Bandwidth is the model for the frequency that can use sensor thereon
Enclose.
However, another important measure of Electret Condencer Microphone is the linearity.The linearity of sensor is to output and input
Calibration curve under given frequency how close to straight line measurement.Slope between input pressure and output voltage is provided in the frequency
The sensitivity of transducer under rate.Under high input range, the output of transducer deviates from preferable straight line.The range of linearity it is low
End is determined with high-end by sensor interface circuitry and sensor.Low side is made an uproar by system noise such as thermal noise, I/F noises and machinery
Sound limits.The higher-end of the range of linearity is determined by the structural nonlinear of such as spring hand hay cutter degree (spring stiffening) etc
Or determined by the circuit non-linearity of such as amplitude limit (clipping) etc.
The dynamic range of capacitance-type transducer is defined as the ratio of the minimum and maximum input signal of the range of linearity.Output from
The deviation of ideal linearity curve causes the distortion that microphone exports., can be by distortion when system is excited at single-frequency
Minimum input range is calculated as, the minimum input range to export deviation from linearity fixed percentage.
Therefore, one of challenge is related to circuit of the production with more preferable feature and reliability in the case where not increasing cost
And MEMS.
The content of the invention
By the illustrated embodiment of the present invention, these problems and other problems are generally addressed or evaded and technology is excellent
Gesture is generally achieved.
According to one embodiment of present invention, a kind of MEMS (MEMS) device, including：First plate, it is arranged in
The second plate above one plate and the first movable panel being arranged between the first plate and the second plate.MEMS further comprises
The second movable panel being arranged between the first movable panel and the second plate.
According to one embodiment of present invention, sensor circuit includes the first filter circuit, is coupling in voltage source and
Between one input bias node, the first input bias node is configured to couple to the of the first kind of capacitance type sensor
One plate.Sensor circuit further comprises the second filter circuit, is coupling between voltage source and the second input bias node, should
Second input bias node is configured to couple to the second plate of the first kind of capacitance type sensor.Capacitance type sensor includes electricity
The first plate for being capacitively coupled to the first kind of the first plate of Second Type and the second plate for being coupled capacitively to Second Type
Second plate of the first kind.
According to one embodiment of present invention, a kind of method for forming MEMS (MEMS) device is included in the substrate
Or form the first plate and square into the second plate on the first panel in substrate.First is formed between the first plate and the second plate
Movable panel.The second movable panel is formed between the first movable panel and the second plate.
Brief description of the drawings
For a more complete understanding of the present invention and its advantage, referring now to the description below made with reference to accompanying drawing, in accompanying drawing
In：
A kind of conventional MEMS sensor circuit is illustrated in Fig. 1；
Fig. 2 illustrates MEMS according to an embodiment of the invention and front-end circuit；
Fig. 3 illustrates the MEMS according to an embodiment of the invention with positive feedback；
Fig. 4 illustrates the block diagram of the MEMS with negative-feedback of an alternative according to the present invention；
Fig. 5 including Fig. 5 A and Fig. 5 B illustrates an alternative implementations of MEMS, wherein in removable plate shape
It is biased into while sensing plate to fixed plate；
Fig. 6 including Fig. 6 A and Fig. 6 B illustrates includes condenser type positive feedback according to another alternative embodiment of the present invention
MEMS circuits；
Fig. 7 including Fig. 7 A and Fig. 7 B illustrates includes condenser type negative-feedback according to another alternative embodiment of the present invention
MEMS circuits；
Fig. 8 including Fig. 8 A and Fig. 8 B illustrates includes more than two independence according to one alternative of the present invention
The MEMS circuits of the removable film of coupling；
Fig. 9 illustrates the sectional view of MEMS according to an embodiment of the invention；
Figure 10 including Figure 10 A and Figure 10 B illustrates the first movable panel according to embodiments of the present invention and second removable
The top view of dynamic plate；
Figure 11 illustrates the sectional view of alternative MEMS according to embodiments of the present invention；And
Figure 12 including Figure 12 A- Figure 12 E illustrates the MEMS according to embodiments of the present invention during each fabrication stage
Device.
Unless otherwise noted, the corresponding label and symbol otherwise in different figures generally refer to corresponding part.It is attached to draw this
Figure is not necessarily drawn to scale with clearly illustrating the parties concerned of embodiment.
Embodiment
The making and use of various embodiments is discussed in detail below.However it should be appreciated that provide can be with by the present invention
The many applicable concepts of the present invention implemented in various extensive specific contexts.The specific embodiment of discussion only illustrates to make
Make and using ad hoc fashion of the invention, do not limit the scope of the invention.
A conventional MEMS sensor circuit is illustrated in Fig. 1.MEMS 100 shown in Fig. 1 is that have two admittedly
Determine double backboard devices of backboard：First fixed plate 101 and the second fixed plate 105.Movable panel 102 is arranged in the first fixed plate
101 and second between fixed plate 105.Output from MEMS 100 is input into the first gain stage 60 and the second gain stage
70.Wave filter can be introduced between voltage source and MEMS sensor.
Therefore, double backboard MEMSs include two capacitors, and the two capacitors are because the pressure of entrance is in phase negative side
Change upwards.
The tolerance limit output sensitivity specification different with support is made in order to manipulate MEMS, sensor circuit must provide adjustment
The ability of gain in addition to unit (unity) gain.A kind of mode of adjust gain is by providing additional gain stage
Or amplifier is used in addition to source follower.However, such technology increases the noise of amplifier and also resulted in bigger
Current drain.Inverting amplifier will additionally reduce system linearity degree.
The another way of adjust gain is to provide the current potential at the bias or film of adjustment voltage source.However, this method
It can be only applicable to reduce the signal (under the conditions of optimal bias) provided by MEMS, then this causes suboptimization system to be believed
Make an uproar than (SNR).In addition, (identical gain factor) works bias voltage on two signal paths in the same manner.Therefore,
Adjust each that bias voltage is not provided into two signal paths and apply different gains for example to optimize differential signal
Or realize the solution of two different channels.
Some embodiments of the present invention are not involving the linearity of MEMS by using at least double diaphragm designs
In the case of improve gain (or vice versa as the same).In various embodiments of the present invention, MEMS realizes power, performance and cost
Between balance.
Fig. 2 illustrates MEMS according to an embodiment of the invention and front-end circuit.
Some embodiments of the present invention realize double backboards and double diaphragm MEMSs with feedback, to significantly improve line
Property degree and gain.Reference picture 2, MEMS 200 include the first fixed plate 101, the second fixed plate 105, the first movable panel 102
With the second movable panel 103.In one embodiment, using linear reading circuit.As indicated, the first movable panel 102 and
Two movable panels 103 are coupled to low-impedance voltage source, and the first fixed plate 101 and the second fixed plate 105 sensing have high impedance.
MEMS 200 operates under constant charge pattern, and output voltage and membrane displacement at the first output and the second output
It is proportional, i.e., it is proportional to the displacement of the first movable panel 102 and the second movable panel 103 respectively.
Various embodiments of the present invention describe and implement passive feedback technology, such as inclined around source follower and high voltage
Put wave filter.In order to realize such technology, MEMS 200 includes the electric isolating part of two separation：First movable panel
102 and second movable panel 103.Although the first movable panel 102 and the second movable panel 103 be electrically isolated (not direct-coupling or
Capacitive couplings), but their mechanical linkages so that second can when the first movable panel 102 moves towards the first fixed plate 101
Movable plate 103 moves away from the second fixed plate 105.In other words, the first movable panel 102 and the second movable panel 103 be rigidly
Coupling.Thus, in various embodiments, MEMS 200 includes four function associated terminals.
First fixed plate 101 and the second fixed plate 105 sense the position of the first movable panel 102 and the second movable panel 103
Move respectively as corresponding charge variation, the charge variation is input to the first gain stage 60 and the second gain with unit gain
Level 70.
The wave filter of high voltage bias branch includes two parts, the first filter circuit 11 and the second filter circuit
111.In one or more embodiments, the first filter circuit 11 and the second filter circuit 111 can include different low
Bandpass filter.In one embodiment, the first filter circuit 11 can include first with the first capacitive filters 20
Resistor 10, and the second filter circuit 111 can include the capacitive filters 120 of second resistance device 110 and second.Specifically
Ground, due to the path of two separation, it can individually adjust the response at the first fixed plate 101 and the second fixed plate 105.Example
Such as, the gain in two paths may be adjusted to similar rank.Advantageously, current embodiment require that minimal power consumption.
In various embodiments, can be by linear diode, nonlinear diode and/or metal-insulator semiconductor's crystal
Manage (reverse operating) and form first resistor device 10 and second resistance device 110.Similarly, the first capacitive filter 20 and the second electricity
Capacitive filter 120 can include metal-insulator-semiconductor capacitor.
In various embodiments, first resistor device 10, the first capacitive filters 20, the electricity of second resistance device 110 and second
The value of appearance formula wave filter 120 can be programmable.For example, they are entered during initial factory test that can be after the fabrication
Row programming.In one or more embodiments, feedback loop can be implemented as a part for asic chip, and MEMS 200 can
To realize in combination of MEMS wafer.In some other embodiment, some parts of feedback loop can be realized in combination of MEMS wafer.
Compared with other high impedance sensing circuits, sensing circuit 35 can be realized using source follower, the source electrode follows
Device includes the first gain stage 60 and the second gain stage 70, the noiseproof feature superior for its.First gain stage 60 and the second gain
Each in level 70 can not include amplification, i.e. gain is equal to 1.The disadvantage of source follower circuit is that it can not be provided
Programmable-gain, it is advantageous that, gain (ideally) is unit gain, and this can closely be controlled.
Fig. 3 illustrates the difference microphone according to an embodiment of the invention with positive feedback.
Fig. 3 illustrates improves gain according to one alternative of the present invention by positive feedback loop.In the present embodiment,
From the output of gain stage apply it is positive and negative be fed to movable panel, such as the output of the first gain stage 60 and the first movable panel 102 it
Between the first feedback loop and the second feedback loop between the output of the second gain stage 70 and the second movable panel 103.Specifically,
Due to the feedback loop of two separation, the corresponding sound that can be independently adjustable at the first fixed plate 101 and the second fixed plate 105
Should.In addition, by being fed to filter bias node from output application is positive and negative, even if the first gain stage 60 and the second gain stage 70 can
With unit gain, also to lift usable output signal.
In various embodiments, in the case of without active circuit and without obvious noise and Power penalty, lead to
Cross and realize gain improving using positive feedback.In the present embodiment, gain (A60) approximation at the first gain stage 60 is (assuming that electric capacity
Variable capacitance between the plate of the capacity ratio MEMS 200 of formula wave filter is much bigger) provide as follows：A60=1+C130/
C120, wherein C130 are the electric capacity of the first capacitor 130, and C120 is the electric capacity of the first capacitive filters 120.It is similar
Ground, the gain (A70) at the second gain stage 70 provide approximately as described belowly：A70=1+C140/C20, wherein C140 are the second electric capacity
The electric capacity of device 140, and C20 is the electric capacity of the second capacitive filters 20.In certain embodiments, first capacitor 130
The electric capacity of electric capacity and the second capacitor 140 can be with about the same.Similarly, the electric capacity of the first capacitive filters 120 can be with
The electric capacity of second capacitive filters 20 is identical.
Fig. 4 illustrates the block diagram of the difference MEMS sensor with negative-feedback according to alternative of the present invention.
Reference picture 4, in the present embodiment, the opposite movable panel node of the output coupling of gain stage to MEMS 200.
From wherein gain as the increased prior embodiment of positive feedback is different, the present embodiment realizes the decay using negative-feedback.Such as
Shown in Fig. 4, the second capacitor 140 is coupled to the first movable panel 102, and the first capacitor 130 is coupled to the second movable panel
103。
In the present embodiment, gain (A60) approximation at the first gain stage 60 is (assuming that the capacity ratio of capacitive filters
Variable capacitance between the plate of MEMS 200 is much bigger) provide as follows：A60=1-C130/C20, and the second gain stage
Gain (A70) at 70 provides approximately as described belowly：A70=1-C140/C120.Therefore, the present embodiment causes negative gain.
In various embodiments, it is removable from single removable film to be modified as at least two for the structure of MEMS 200
Film, at least two removable film are electrically isolated from one but by independent bias so that removable film can be with passive feedback
Structure is used together with differential topology, so as to allow gain and decay using condenser type feedback to adjust.
Fig. 5-Fig. 7 illustrates an alternative implementations of circuit described in Fig. 2-Fig. 4.
Fig. 5 A illustrate an alternative implementations of MEMS 200, are biased wherein applying to fixed plate, and may move
Plate is sensed and is coupled to gain stage for further handling.In the present embodiment, voltage bias is applied by the first wave filter
It is added to the first fixed plate 101 and the second fixed plate 105 is applied to by the second wave filter, the first wave filter includes first resistor device
100 and first capacitive filters 120, the second wave filter include the capacitive filters 20 of second resistance device 10 and second.As closed
In the prior embodiment of Fig. 2 descriptions like that, it is changed independently using wave filter and is coupled to the first fixed plate 101 and second
Offset signal at the node of fixed plate 105.
Fig. 5 B illustrate an alternative using single voltage source.
Fig. 6 including Fig. 6 A and Fig. 6 B illustrates includes condenser type positive feedback according to another alternative embodiment of the present invention
MEMS circuits.
As in the embodiment described using Fig. 3, reference picture 6A, the first capacitor 130 and the second capacitor 140 are used
In forming two independent positive feedback loops, it is coupled to the first fixed plate 101 and the second fixed plate 105 to help being changed independently
Offset signal at node.The present embodiment realizes postiive gain at the output of the first gain stage 60 and the second gain stage 70.It is similar
Ground, in fig. 6b, the first capacitor 130 are coupled to the first movable panel 102, and to be coupled to second removable for the second capacitor 140
Dynamic plate 103, to provide postiive gain.
Fig. 7 including Fig. 7 A and Fig. 7 B illustrates includes condenser type negative-feedback according to another alternative embodiment of the present invention
MEMS circuits.
As shown in Figure 7 A, in the present embodiment, the feedback being similar to described in Fig. 4 is realized.First capacitor 130 is coupled to
Two fixed plates 105, the second capacitor 140 are coupled to the first fixed plate 101, thus create independent negative feedback loop.Similarly, exist
In Fig. 7 B, the first capacitor 130 is coupled to the second movable panel 103, and the second capacitor 140 is coupled to the first movable panel
102, to provide negative-feedback.
Fig. 8 including Fig. 8 A and Fig. 8 B illustrates includes more than two independence according to one alternative of the present invention
The MEMS circuits of the removable film of coupling.Fig. 8 B illustrate the enlarged drawing of MEMS shown in Fig. 8 A.
Reference picture 8A and Fig. 8 B, removable motion block are included such as the first movable panel 102 described in prior embodiment
With the second movable panel 103.In addition, removable motion block includes the 3rd movable panel 104 and the 4th movable panel as shown in Figure 8
106.3rd movable panel 104 is coupled capacitively to the 3rd fixed plate 108, and the 4th movable panel 106 is coupled capacitively to
Four fixed plates 109.Each in separate and distinct filter circuit coupling movable panel can be used.For example, in one kind
In situation, the 3rd movable panel 104 can be coupled to by the wave filter including the capacitor 225 of 3rd resistor device 215 and the 3rd
The second voltage source, and the 4th movable panel 106 can be by including another filter of the 4th resistor 310 and the 4th capacitor 320
Ripple device is coupled to the second voltage source.The output of 3rd fixed plate 108 and the 4th fixed plate 109 may be coupled to corresponding gain stage
60 ' and 70 '.
In addition, as diagram, in the fig. 8b, the first movable panel 102 and the second movable panel 103 and the first fixed plate
101 and second fixed plate 105 be shown as different sizes in one embodiment.
Thus, some embodiments of the present invention description uses the difference with the differential capacitance type microphone for improving gain
Electret Condencer Microphone can cut down common-mode noise.Such differential capacitance type microphone can perform compared with other microphones
More preferably, it is such as with more high sensitivity and with higher control bias voltage and preferably linear due to extra capacitor
Degree.
In various embodiments, the MEMS circuits shown in Fig. 2-Fig. 8 can include the MEMS of random time, including wheat
Gram wind, oscillator, resonator, machinery, pressure sensor, motion sensor etc..
Fig. 9 illustrates the sectional view of MEMS according to an embodiment of the invention.
In various embodiments, Fig. 9 illustrates the MEMS of the embodiment of MEMS circuits described in explanation Fig. 2-Fig. 8.Ginseng
According to Fig. 9, MEMS 200 includes substrate 210, and substrate 210 includes backside cavity 230.The back of the body of the backside cavity 230 from substrate 210
Side extends continuously to the front side of substrate 210.
First fixed plate 101 and the second fixed plate 105 are disposed in the top of backside cavity 230.Fixed plate is referred to as
Backboard.
In one or more embodiments, MEMS includes film layer, and the film layer includes the He of the first movable panel 102
The second movable panel 103 being spaced apart with the first movable panel 102, the first movable panel 102 and the second movable panel 103 all cloth
Put above substrate 210.Film layer can be maintained at the top of substrate 210 by supporting construction 220, and supporting construction 220 can also
Including the supporting construction for the separation of each in film layer and fixed plate.In one or more embodiments, first is removable
The dynamic movable panel 103 of plate 102 and second is circular.
Additionally, the first cavity 250 is arranged between the first fixed plate 101 and the first movable panel 102, and the second cavity
240 are arranged between the second fixed plate 105 and the second movable panel 103.Thus, the first movable panel and the second movable panel edge
Outer peripheral areas to fix, but other places freely suspend.The presence permission second of first cavity 240 and the second cavity 250 is removable
Dynamic plate 102 and 103 moves freely.
In various embodiments, the first movable panel 102 is electrically isolated with the second movable panel 103.One or more real
Apply in example, the first movable panel 102 is not coupled capacitively to the second movable panel 103, i.e. capacitive couplings minimum or basic
It is zero.Therefore, intermediate layer 260 can be made up of insulating materials such as low k dielectric, to prevent capacitive couplings.
In various embodiments, the first movable panel 102, the second movable panel 103 and the mechanical couplings of intermediate layer 260 or chain
Connect as integral unit so that they vibrate together.Therefore, when the first movable panel 102 moves towards the first fixed plate 101
When, meanwhile, the second movable panel 103 moves away from the second fixed plate 105.
First fixed plate 101 and the second fixed plate 105 can also include multiple salient points on the side towards film layer, be used for
Film layer is prevented to be bonded in film layer.First plate 101 and the second plate 105 can also include multiple holes 170.It is used for by providing
The hole of etch liquids path can use the plurality of hole 170 during manufacturing internal cavities.Additionally, multiple holes 170 can carry
For the air flue during the vibration of film layer, thus minimize damping effect.For example, because multiple holes 170, first are solid
The fixed plate 105 of fixed board 101 and second is less sensitive for the acoustic pressure of entrance.By contrast, the first movable panel 102 and second can
Movable plate 103 is become effectively attached to substrate 210 by spring, and therefore with the oscillation of sound pressure of entrance.MEMS 200 can
To be enclosed in sealed chamber.
The first contact 45 can be formed at the top surface of supporting construction 220, for being electrically coupled the first fixed plate 101.It is attached
Add ground, the contact 65 of the second contact the 55, the 3rd and the 4th contact 75 may be respectively used for being electrically coupled the first movable panel 102, second
The fixed plate 105 of movable panel 103 and second.Therefore, although the first movable panel 102 and the second movable panel 103 are used as one
Mechanical module unit moves together, but they may be coupled to different potentials node.
In various embodiments, the position selection of the second contact 55 is contacts 65 away from the 3rd as much as possible, to prevent
Capacitive couplings.In various embodiments, intermediate layer 260 is configured to not influence the mechanical behavior of membrane system, such as because of it
It is designed to make low strain dynamic non-conductive layer.In another alternative embodiment, compared with single thin film, intermediate layer 260 is used to improve
The robustness of membrane system.In various embodiments, two conductive layers (i.e. the first movable panel 102 and the second movable panels
103) identical material or size be can not be.
Figure 10 including Figure 10 A and Figure 10 B illustrates removable according to the first above-mentioned movable panel of the present invention and second
The top view of plate.
In various embodiments, the first movable panel 102 and the second movable panel 103 can be manufactured to minimize capacitive character
Coupling.In one embodiment, the current-carrying part of the first movable panel 102 and the conductive part of the second movable panel 103 is made to divide it
Between overlapping minimum.
For example, Figure 10 A illustrate first movable panel 102 alternately with conductive region and insulating regions.It is for example, cloudy
Shadow frame A11 includes conductive region, rather than dash box A21 includes insulating regions.
By contrast, pair of the second movable panel 103 immediately below the first movable panel 102 is shown in fig. 1 ob
Answer part.Similar Figure 10 A, in fig. 1 ob, non-shadow frame A11 includes insulating regions, and dash box A21 includes conductive region.Cause
And the pattern in the second movable panel 103 is the reverse of the pattern in the first movable panel 102.
Figure 11 illustrates alternative MEMS according to an embodiment of the invention.
In the present embodiment, by introducing air gap or multiple areolas, the first movable panel 102 and the second movable panel are made
Capacitive couplings between 103 minimize.First movable panel 102 still uses the linkage as support pillar
(linkage) 270 and the second rigidly mechanical couplings of movable panel 103.
Figure 12 including Figure 12 A- Figure 12 E illustrates the MEMS according to embodiments of the present invention during the various fabrication stages
Device.
Figure 12 A illustrate it is according to an embodiment of the invention after the first fixed plate of MEMS structure is formed half
Conductor substrate.
Figure 12 A illustrate the supporting construction 220 to be formed above substrate 210.In various embodiments, substrate 210 can be with
It is Semiconductor substrate.In certain embodiments, substrate 210 can be semiconductor body substrate or semiconductor-on-insulator substrate.
Some examples of substrate 210 include bulk single crystal silicon substrate and (or the layer that grows thereon or are otherwise formed in therein
Layer), { 110 } silicon layer on { 100 } silicon wafer, silicon-on-insulator (SOI) wafer layer or germanium on insulator (GeOI) wafer layer.
In various embodiments, substrate 210 can include even thick epitaxial layer.In various embodiments, substrate 210 can be silicon wafer, germanium
Chip can include telluride indium, indium arsenide, indium phosphide, gallium nitride, GaAs, telluride gallium or the compound of its combination partly to lead
Body substrate.In one embodiment, substrate 210 can include epitaxially deposited layer, such as grow gallium nitride on silicon.
In various embodiments, supporting construction 220 includes insulating barrier.In one embodiment, supporting construction 220 can wrap
Include nitride layer.In another embodiment, supporting construction 220 can include oxide skin(coating).In various embodiments, can pass through
Using the thermal oxide of the gas-phase deposition of such as chemical vapor deposition, plasma gas phase deposition and/or spin coating proceeding etc,
Nitrogenize to form supporting construction 220.In various embodiments, supporting construction 220 can be included at the different disposal stage and deposit
Multiple layers.
In one or more embodiments, the second fixed plate 105 is manufactured on substrate 210.In one embodiment,
Two fixed plates 105 can include polysilicon layer.For example, it can deposit solid to form second with composition one or more polysilicon layer
Fixed board 105.
Figure 12 B illustrate according to an embodiment of the invention after the removable film layer of MEMS structure is formed
Semiconductor substrate.
Next the first movable panel 102 and the second movable panel 103 can be manufactured.In one embodiment, in order
Composition the first movable panel 102 and the second movable panel 103, for example, can deposit with the second movable panel of composition 103, it is then heavy
Product and the first movable panel of composition 102.It is alternatively possible to it is sequentially depositing the first movable panel 102 and the second movable panel 103 simultaneously
And the composition successively after two layers are deposited.
First movable panel 102 and the second movable panel 103 can include polysilicon.In an alternative embodiment, first can
The movable panel 103 of movable plate 102 and second includes amorphous silicon layer.In some alternatives, the first movable panel 102 and
Two movable panels 103 include conductive layer.In various embodiments, the first movable panel 102 and the second movable panel 103 and centre
Layer can have about 100nm to about 2000nm thickness together.In one or more embodiments, the movable part of MEMS
The gross thickness divided has about 200nm to about 1000nm thickness.
It is optionally possible to after the second movable panel 103 is deposited and before the first movable panel 102 is deposited, deposition
With the layer in composition intermediate layer 260.It can also deposit and planarize another layer of supporting construction 220.
Figure 12 C illustrate it is according to an embodiment of the invention after the top fixing plate of MEMS structure is formed half
Conductor substrate.
As indicated in fig. 12 c, the first fixed plate 101 is formed on removable film layer.It can deposit solid with composition first
Fixed board 101.In one embodiment, can deposit and composition one or more polysilicon layer.In one embodiment, Ke Yi
Form another layer that the first fixed plate 101 deposited and planarized afterwards supporting construction 220.
Figure 12 D illustrate the semiconductor lining according to an embodiment of the invention after the processing of the front side of MEMS structure
Bottom.
Contact can be formed to be used to contact substrate 210, the first fixed plate 101, the second fixed plate 105, the first movable panel
102 and second movable panel 103.It can shelter and contact is formed after composition supporting construction 220.
Front side can be protected during subsequent back-side process by forming protective layer 280.In various embodiments, protect
Sheath 280 can include silicon nitride or silica.
Figure 12 E illustrate MEMS after the formation of the cavity according to an embodiment of the invention.
Back-side process continues from Figure 12 E to form backside cavity 230.Substrate 210 is inverted or overturn, to expose dorsal part.Connect
Get off, deposition and composition resist (not shown) on the dorsal part exposed, and expose the substrate 210 in MEMS region
Part.Etch the substrate 210 exposed, the region until exposing supporting construction 220.
In various embodiments, ripple can be used to wish technique (Bosch Process) or by depositing hard mask layer and making
With vertical reactive ion etching process etched substrate 210 come etched substrate 210.In one embodiment, covered using only resist
Film.If resist budget is insufficient, smooth side wall can be realized using hard mask and vertical reactive ion etching.So
And the integration mechanism needs to remove remaining hard mask residual.Therefore, in certain embodiments, can be covered firmly not additional
In the case of film technique is wished using ripple.
In ripple wishes technique, alternating isotropism plasma etching step and passivation layer deposition step.The technique phase is wished in ripple
Between be repeated several times etching/deposition step.Plasma etching is configured to for example hang down using the sulfur hexafluoride [SF6] in plasma
Directly etch.Such as it is used as source gas aggradation passivation layer using octafluorocyclobutane.Each individually step can open several seconds or more
It is few.Passivation layer protects substrate 21 and prevents from further etching.However, during the plasma etching stage, substrate is bombarded
Orient ion remaval and the passivation layer of (but not being along side) and etch continuation at channel bottom.When exposing supporting construction
Standing wave wishes technique when 220.Ripple wishes technique and produces fan-shaped side wall.
Next referring for example to Fig. 8, such as using wet etching chemical agent, the region for the supporting construction 220 exposed is removed,
To form the first cavity 240 and the second cavity 250.In one or more embodiments, wet etching can be selective.
In various embodiments, release etching can be performed from the front side of substrate 210 and/or dorsal part.Can be such as in conventional MEMS process phases
Between continue follow-up processing as use.
Although describing the present invention with reference to illustrated embodiment, this description is not intended to be construed as limiting meaning.Ginseng
According to the description, it will be appreciated by one of skill in the art that the various modifications and combinations of illustrated embodiment and other implementations of the present invention
Example.As diagram, in an alternative embodiment, the embodiment described in Fig. 2-Figure 12 can be combined with each other.It is anticipated that be institute
Attached claim covers any such modification or embodiment.
Although the present invention and its advantage is described in detail, it will be appreciated that, do not departing from appended claims limit
Here various change, replacement and change can be carried out in the case of fixed the spirit and scope of the present invention.For example, art technology
Arbitrarily it will be readily appreciated that, many in feature described here, function, technique and material can be maintained at model of the present invention
It is changed while enclosing interior.
Moreover, scope of the present application be not intended to be limited to technique described in specification, machine, manufacture, component, device,
The specific embodiment of method and steps.As those of ordinary skill in the art will readily appreciate that from the disclosure
Like that, it can be utilized according to the present invention and perform the function essentially identical with corresponding embodiment described here or realize essentially identical
As a result, there is currently or later developed technique, machine, manufacture, component, device, method or step.Therefore, appended right
It is required that it is intended to include such technique, machine, manufacture, component, device, method or step in the range of it.
Claims (26)
1. a kind of MEMS (MEMS) device, including：
First plate；
Second plate, it is arranged on first plate；
First movable panel, it is arranged between first plate and second plate；And
Second movable panel, it is arranged between first movable panel and second plate；
Wherein described MEMS includes the first I/O node coupled to first plate, coupled to second plate
The second I/O node, coupled to the 3rd I/O node of first movable panel and coupled to described
4th I/O node of the second movable panel, wherein first I/O node be with described second input/it is defeated
The different I/O node of egress, and wherein described 3rd I/O node is and the 4th input/output
The different I/O node of node；
Wherein described first movable panel is rigidly coupled to second movable panel, and wherein described first movable panel
Be configured to be shielded and from the second movable panel capacitive couplings.
2. device according to claim 1, further comprises：
Bottom cavity, it is arranged in below first plate；
First cavity, it is arranged between first plate and first movable panel；And
Second cavity, it is arranged between second plate and second movable panel.
3. device according to claim 1, wherein first movable panel be configured to couple to it is described second removable
The different potential nodes of dynamic plate.
4. device according to claim 1, wherein first movable panel is configured to be coupled to by the first wave filter
Voltage source, and wherein described second movable panel is configured to be coupled to the voltage source by the second wave filter.
5. device according to claim 4, wherein first wave filter and second wave filter include different RC
Wave filter.
6. device according to claim 1, wherein first plate is the first fixed plate, and wherein described second plate is
Second fixed plate.
7. device according to claim 6, wherein first fixed plate is configured to be coupled to electricity by the first wave filter
Potential source, and wherein described second fixed plate is configured to be coupled to the voltage source by the second wave filter.
8. device according to claim 6, further comprises：
3rd movable panel and the 4th movable panel；And
3rd fixed plate and the 4th fixed plate, wherein the 3rd movable panel is coupled capacitively to the 3rd fixed plate, its
Described in the 4th movable panel be coupled capacitively to the 4th fixed plate.
9. device according to claim 8, first movable panel is configured to be coupled to first by the first wave filter
Voltage source, wherein second movable panel is configured to be coupled to the first voltage source by the second wave filter, wherein described
3rd movable panel is configured to be coupled to the second voltage source, and wherein described 4th movable panel configuration by the 3rd wave filter
It is coupled to the second voltage source into by the 4th wave filter.
10. device according to claim 9, wherein first wave filter and second wave filter include different RC
Wave filter, and wherein described 3rd wave filter and the 4th wave filter include different RC wave filters.
11. a kind of sensor circuit, including：
MEMS (MEMS) structure, four end capacitance sensors being formed, the MEMS structure includes the first plate of the first kind,
Second plate of the second plate of the first kind, the first plate of Second Type and the Second Type；
First filter circuit, it is coupling between voltage source and the first input bias node, the first input bias node is matched somebody with somebody
It is set to first plate for the first kind for being coupled to four end capacitance type sensors；And
Second filter circuit, it is coupling between the voltage source and the second input bias node, the second input biasing section
Point is configured to couple to second plate of the first kind of the capacitance type sensor, wherein second wave filter is electric
Road is the circuit different from first filter circuit, wherein the capacitance type sensor includes being coupled capacitively to the second class
First plate of the first kind of first plate of type and it is coupled capacitively to described the second of the Second Type
Second plate of the first kind of plate.
12. circuit according to claim 11, wherein first filter circuit include being coupling in the voltage source with
It is described first input bias node between first resistor device and be coupling in fixed potential and it is described first input bias node it
Between the first capacitor, and wherein described second filter circuit includes being coupling in the voltage source and the described second input is inclined
The second electricity put the second resistance device between node and be coupling between the fixed potential and the second input bias node
Container.
13. circuit according to claim 12, wherein the first resistor device includes diode or metal insulator is partly led
Body transistor, wherein first capacitor includes metal-insulator-semiconductor capacitor.
14. circuit according to claim 11, wherein first plate of the first kind be rigidly coupled to it is described
Second plate of the first kind.
15. circuit according to claim 11, wherein the capacitance type sensor includes MEMS condenser microphone.
16. circuit according to claim 11, wherein first plate of the first kind is the first movable panel, its
Described in second plate of the first kind be the second movable panel, wherein first plate of the Second Type is first solid
Fixed board, and second plate of wherein described Second Type is the second fixed plate.
17. circuit according to claim 16, further comprises：
First amplifier, including it is coupled to the input node of the first output bias node, the first output bias node configuration
Into first fixed plate for being coupled to the capacitance type sensor；And
Second amplifier, including it is coupled to the input node of the second output bias node, the second output bias node configuration
Into second fixed plate for being coupled to the capacitance type sensor.
18. circuit according to claim 17, further comprises：
First feedback condenser, it is coupling between the first input bias node and the output node of first amplifier；
And
Second feedback condenser, it is coupling between the second input bias node and the output node of second amplifier.
19. circuit according to claim 17, further comprises：
First feedback condenser, it is coupling between the second input bias node and the output node of first amplifier；
And
Second feedback condenser, it is coupling between the first input bias node and the output node of second amplifier.
20. circuit according to claim 11, wherein first plate of the first kind is the first fixed plate, wherein
Second plate of the first kind is the second fixed plate, wherein first plate of the Second Type is first removable
Plate, and second plate of wherein described Second Type is the second movable panel.
21. circuit according to claim 20, further comprises：
First amplifier, including it is coupled to the input node of the first output bias node, the first output bias node configuration
Into first movable panel for being coupled to the capacitance type sensor；And
Second amplifier, including it is coupled to the input node of the second output bias node, the second output bias node configuration
Into second movable panel for being coupled to the capacitance type sensor.
22. circuit according to claim 21, further comprises：
First feedback condenser, it is coupling in the input node of first amplifier and the output section of first amplifier
Between point；And
Second feedback condenser, it is coupling in the input node of second amplifier and the output section of second amplifier
Between point.
23. circuit according to claim 21, further comprises：
First feedback condenser, it is coupling in the input node of second amplifier and the output section of first amplifier
Between point；And
Second feedback condenser, it is coupling in the input node of first amplifier and the output section of second amplifier
Between point.
24. the method that one kind forms MEMS (MEMS) device, methods described include：
Form the first plate in the substrate or in substrate；
The second plate is formed on first plate；
The first movable panel is formed between first plate and second plate；And
The second movable panel is formed between first movable panel and second plate；
Wherein described MEMS includes the first I/O node coupled to first plate, coupled to second plate
The second I/O node, coupled to the 3rd I/O node of first movable panel and coupled to described
4th I/O node of the second movable panel, wherein first I/O node be with described second input/it is defeated
The different I/O node of egress, and wherein described 3rd I/O node is and the 4th input/output
The different I/O node of node；
Wherein described first movable panel is rigidly coupled to second movable panel, and wherein described first movable panel
Be configured to be shielded and from the second movable panel capacitive couplings.
25. according to the method for claim 24, wherein first movable panel and second movable panel are formed as
A part for same removable motion block, and wherein described first movable panel be configured to be shielded in order to avoid with it is described second removable
Dynamic plate capacitive couplings.
26. according to the method for claim 24, further comprise：
Bottom cavity is formed in the substrate below first plate；
The first cavity is formed between first plate and first movable panel；And
The second cavity is formed between second plate and second movable panel.
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| US201361847874P | 2013-07-18 | 2013-07-18 | |
| US61/847,874 | 2013-07-18 | ||
| US14/255,703 | 2014-04-17 | ||
| US14/255,703 US9179221B2 (en) | 2013-07-18 | 2014-04-17 | MEMS devices, interface circuits, and methods of making thereof |
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| US9806687B2 (en) * | 2016-03-23 | 2017-10-31 | Infineon Technologies Ag | System and method for signal amplification using a resistance network |
| DE102017204006B3 (en) * | 2017-03-10 | 2018-08-02 | Infineon Technologies Ag | MEMS transducer, MEMS microphone and method of providing a MEMS transducer |
| DE102017223869B4 (en) | 2017-12-29 | 2021-09-02 | Infineon Technologies Ag | MEMS component and mobile device with the MEMS component |
| CN113423050B (en) * | 2021-06-18 | 2024-03-08 | 杭州士兰微电子股份有限公司 | MEMS system |
| DE102021126505A1 (en) | 2021-10-13 | 2023-04-13 | Infineon Technologies Ag | GAS SENSOR CONTAINING AN ULTRASONIC RESONATOR AND USE FOR THE DETECTION OF GASES |
| CN117354705B (en) * | 2023-12-04 | 2024-02-13 | 苏州敏芯微电子技术股份有限公司 | Acoustic-electric conversion structure, manufacturing method thereof, microphone and electronic equipment |
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| CN102957992A (en) * | 2011-08-15 | 2013-03-06 | 哈曼国际工业有限公司 | Dual backplate microphone |
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| US6970031B1 (en) * | 2004-05-28 | 2005-11-29 | Hewlett-Packard Development Company, L.P. | Method and apparatus for reducing charge injection in control of MEMS electrostatic actuator array |
| EP2432249A1 (en) * | 2010-07-02 | 2012-03-21 | Knowles Electronics Asia PTE. Ltd. | Microphone |
| US9148726B2 (en) * | 2011-09-12 | 2015-09-29 | Infineon Technologies Ag | Micro electrical mechanical system with bending deflection of backplate structure |
| US9179221B2 (en) | 2013-07-18 | 2015-11-03 | Infineon Technologies Ag | MEMS devices, interface circuits, and methods of making thereof |
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| CN102957992A (en) * | 2011-08-15 | 2013-03-06 | 哈曼国际工业有限公司 | Dual backplate microphone |
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