CN107192849A - A kind of design of micro-machine acceleration transducer based on thermal convection principle and preparation method thereof - Google Patents
A kind of design of micro-machine acceleration transducer based on thermal convection principle and preparation method thereof Download PDFInfo
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- CN107192849A CN107192849A CN201710435499.2A CN201710435499A CN107192849A CN 107192849 A CN107192849 A CN 107192849A CN 201710435499 A CN201710435499 A CN 201710435499A CN 107192849 A CN107192849 A CN 107192849A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0897—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by thermal pick-up
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0862—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with particular means being integrated into a MEMS accelerometer structure for providing particular additional functionalities to those of a spring mass system
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- Pressure Sensors (AREA)
Abstract
The present invention relates to a kind of design of micro-machine acceleration transducer based on thermal convection principle and preparation method thereof.Perforate forms cavity configuration to heat convection type micro-machine acceleration transducer involved in the present invention not on silicon chip, but be bonded glue glass cover-plate and wafer bonding to form closed cavity by BCB, and one layer of polyimide film has been made in the first described substrate to prevent heat to scatter and disappear, ensure that hot gas group preferably plays a role and reduced power consumption, other polyimide film is also possible to prevent platinum electrode electric leakage, the sensor construction that this design makes technical process become simple and make is more stable, reliability is high, and performance is also more preferable.
Description
Technical field
The invention belongs to micro-electronic mechanical skill field, it is related to a kind of micro-inertia sensor, and in particular to one kind is based on heat
Design of micro-machine acceleration transducer of convective principles and preparation method thereof.
Background technology
The application field of micro-machine acceleration transducer is more and more wider in recent years, and market is also increasing, with micromechanics
The fast development of process technology, more and more high performance micro-machine acceleration transducers are developed.Micro-machine acceleration
It is a variety of that sensor can be divided into condenser type, pressure resistance type, piezoelectric type, tunnel current formula, heat convection type, resonant mode etc. according to principle difference
Type, wherein capacitance acceleration transducer are because with sensitivity height, stability is good, the advantages of temperature coefficient is small, therefore base
It is to develop most class sensors at present in the acceleration transducer of capacitance detecting.But it is due to the acceleration sensing of the type
Device needs spacing between substantial amounts of comb structure, broach also very little, if the acceleration applied is larger, or is fallen between pole plate
Adhesion failure will be caused if grain or even damaged, thus measurement compared with high acceleration or in some special environment it is uncomfortable
With.
Piezoresistance type acceleration sensor make use of the piezoresistive effect of semiconductor, and extraneous acceleration signal can change the quick electricity of power
The resistivity of resistance, so as to be that can detect that the signal by external circuitry.The sensitivity coefficient of piezoresistance type acceleration sensor is big, point
Resolution is high, but the type acceleration transducer temperature drift is larger, and temperature in use is restricted.Piezoelectric type, tunnel current formula,
Resonant mode etc. is all using relatively fewer.It is more than the contrast of heat convection type acceleration transducer that all types of micro-inertia sensors has larger
Advantage.Heat convection type acceleration transducer does not have the mass of entity, but forms transportable small by heating air
Then hot gas group measures acceleration as virtual sensitive-mass block by measuring the change in the temperature field caused by acceleration
Spend, therefore it will not be limited by solid mass, volume can accomplish smaller, and it can be entered with silicon face technique
Row processing, technical maturity simple in construction, yields is up to more than 90%；And due to no solid mass, heat convection type microcomputer
Tool acceleration transducer can be resisted and is not damaged by more than 50000g impact.Heat convection type acceleration transducer is based entirely on mark
Accurate CMOS manufacturing process, it is completely compatible with IC techniques, production in enormous quantities can be met.
Heat convection type acceleration transducer is the principle based on temperature-sensitive resistor, therefore, and the temperature of resistance material is sensitive
Property have significant impact to performances such as sensitivity, the response times of accelerometer, so selection suitable material for that can make
High performance thermal convection acceleration sensor is most important.
The content of the invention
It is an object of the invention to provide a kind of design of micro-machine acceleration transducer based on thermal convection principle and its
Preparation method, the preferable material of heat convection type micro-machine acceleration transducer temperature in use sensitiveness --- platinum makes sensing
The core of device --- temperature-sensitive resistor；With the preferable material of electric conductivity --- gold transmits the interconnection of signal to make
Line；Prevent heat scatters and disappears hot gas group is preferably played a role and reduce work(with the polyimide film with partiting thermal insulation characteristic
Consumption；Glass cover-plate is bonded with silicon chip being finally bonded glue with BCB, so as to form a closed cavity, it is to avoid outer
Boundary's air has a negative impact to sensor.Thermal convection current micro-machine acceleration transducer involved in the present invention uses silicon face work
Skill is processed making, and technical process is simple, with IC process compatibles, be conducive to improving chip integration, reliability is high, sensitive
Degree is high, and performance is good.
The heat convection type micro-machine acceleration transducer that the present invention is provided includes the polyamides on first substrate and its burnishing surface
Imines film, reference area aluminum oxide film, the RTD being produced on film, it is produced on film to be connected to access with RTD and connects
Go out the golden interconnection line of signal, be produced on outermost layer silicon nitride protective layer and silicon chip key that first substrate has carried out the one side of structure
The glass cover-plate being combined.
Described Kapton is made on first substrate silicon chip, 2~200 microns of thickness.
30~3000 microns of length that described reference area is etched on Kapton, width 20~2000 are micro-
Rice, the cuboid groove of 2~200 microns of depth.
Described aluminum oxide film fill up reference area and upper surface it is smooth and with other planes formation same plane.
Described RTD is serpentine arrangement, and four part, an including adding thermal resistance altogether, length 20~6000 is micro-
Rice, 1~100 micron of width, 0.1~10 micron of thickness；Two sensing resistors, 20~6000 microns of length, width 1~100 is micro-
Rice, 0.1~10 micron of thickness, and two sensing resistor length, width, thickness and shape all same, it is symmetrically placed in heating electricity
The both sides of resistance；One reference resistance, 20~20000 microns of length, 1~100 micron of width, 0.1~10 micron of thickness is produced on
On aluminum oxide film.Described golden 100~2000 microns of interconnection line main part width, 1~10 micron of thickness.
0.3~3 micron of described silicon nitride protective layer thickness, it is 100~2000 to have the length of side at the end points of golden interconnection line
The square perforate of micron, as bonding region, connects lead during encapsulating.
Described glass cover-plate is bonded glue together with wafer bonding by BCB, forms closed cavity.
Make comprising the concrete steps that for the micro-machine acceleration transducer：
（1）Kapton is formed on the burnishing surface of first substrate；
（2）Etch polyimide film formation reference area；
（3）Aluminum oxide is filled up in reference area；
（4）RTD is formed on the aluminum oxide film of reference area and on the polyimide film in other regions；
（5）Golden interconnection line is formed on polyimide film；
（6）The outermost layer formation silicon nitride film of the one side of structure has been carried out in first substrate；
（7）Etch nitride silicon thin film, bonding region is formed at the gold interconnection line endpoints；
（8）Glass cover-plate is formed closed cavity together with wafer bonding using BCB bonding techniques.
In summary, polyimide film on first substrate and its burnishing surface, ginseng can be realized according to the inventive method
Examination district aluminum oxide film, the RTD being produced on film, it is produced on the golden interconnection line being connected on film with RTD, is produced on
One substrate carried out the outermost layer silicon nitride film of the one side of structure, together with wafer bonding glass cover-plate composition it is hot right
Streaming micro-machine acceleration transducer.Reference resistance, adding thermal resistance and sensing resistor material are platinum, adding thermal resistance and sensing electricity
Resistance is produced on composition central role part on polyimide film, in same sensitive direction, forms a sensitive axes；With reference to electricity
Resistance is produced on the aluminum oxide film of reference area, and reference area is not in sensitive axes and away from central role part, to prevent core
The heat influence reference resistance that functional component is produced detects the degree of accuracy of ambient temperature.Thermal convection current of the present invention declines
Mechanical acceleration sensor is all passed through using the good material of platinum, golden equitemperature sensitiveness, made resistance length, width and thickness
Cross calculating and emulate, obtained optimal result.Heat convection type micro-machine acceleration transducer involved in the present invention is not in silicon
Perforate forms cavity configuration on piece, but is bonded glue glass cover-plate and wafer bonding to form closed cavity by BCB, and
One layer of polyimide film has been made in the first described substrate come prevent heat scatter and disappear, it is ensured that hot gas group preferably play a role and
Power consumption is reduced, polyimide film is also possible to prevent platinum electrode electric leakage in addition, this design makes technical process become simple and system
Make sensor construction out more stable, reliability is high, performance is also more preferable.
Brief description of the drawings
Fig. 1 is overall structure diagram of the invention；
Fig. 2（a）-2（i）For the fabrication processing schematic diagram of the present invention；
Wherein each description of reference numerals is as follows：
1 represents silicon chip；
2 represent polyimides；
3 represent the reference area etched；
4 represent aluminum oxide；
5 represent platinum adding thermal resistance；
6 represent platinum sensing resistor；
7 represent platinum reference resistance；
8 represent golden interconnection line；
9 represent silicon nitride；
10 represent the bonding region of etch silicon nitride formation；
11 represent BCB bonding glue；
12 represent glass cover-plate.
Embodiment
The present invention will be further described with accompanying drawing with reference to embodiments, but the present invention is by no means limited to introduced reality
Apply example.
Embodiments of the invention are related to a kind of heat convection type micro-machine acceleration transducer, as shown in figure 1, in first substrate
Burnishing surface on do last layer polyimide film, etching Kapton formation reference area groove, regrowth aluminum oxide is formed
Aluminum oxide reference area, this reference area surface is in same plane with other areas of polyimide surfaces；Main effect part is by heating
Resistance and sensing resistor composition, they are made on polyimide film, and two sensing resistor length and widths, thickness and shape
All same, is symmetrically disposed at adding thermal resistance both sides, and the distance to adding thermal resistance is equal；Reference resistance is made in the oxidation of reference area
On aluminium film, and the resistance of reference resistance and the resistance of adding thermal resistance are into certain proportionate relationship, so again by with it is external
The control and regulation to device operating temperature are realized in the cooperation of circuit；Interconnection line is connected at the end points of each resistance；Use BCB
Bonding techniques are glass cover-plate together with wafer bonding.
The preparation method for the micro-machine acceleration transducer based on thermal convection principle that the present embodiment is related to, with reference to Fig. 2
（a）-2（i）Process chart illustrate, mainly comprise the following steps that：
A, from single low resistance silicon chip thrown as first substrate 1, in the burnishing surface formation polyimide film 2 of silicon chip, and imidization.
B, with reference to mask plate（Mask 1）, with photoresist as mask, polyimide film is etched using ion etching RIE,
And make reference area 3 using stripping technology.
C, with reference to mask plate（Mask 1）, with photoresist as mask, aoxidized after exposure, development using optical coating system
Aluminium, using 100 degrees Celsius of temperature, and is removed unwanted aluminum oxide using stripping technology, forms aluminum oxide reference area 4.
D, with reference to mask plate（Mask 2）, mask is done with photoresist, it is first before sputtering platinum, sputtering platinum using magnetron sputter
Sputter one layer of chromium（Or titanium）To increase the adhesiveness of platinum and substrate, then with stripping technology by unwanted chromium platinum（Or titanium platinum）Go
Remove, form RTD 5,6,7.
E, with magnetron sputter in whole surface sputter one layer 20~500 nanometers of chromium（Or titanium）, then sputter on chromium one
The gold of 20~500 nanometers of layer, then in conjunction with mask plate（Mask 3）, with photoresist as mask, expose, develop to after be put into electricity
It is powered in plating solution, taken out after the plating of gold, the thickness that arrival needs, remove photoresist, then carrying out knot with IBE etching machines
One face full wafer of structure etches away the metal level of 40~1000 nano thickness, forms golden interconnection line 8.
F, with PECVD carry out a face full wafer deposited silicon nitride of structure, form protective layer 9.
G, with reference to mask plate（Mask 4）, with photoresist as mask, carried out after exposure, development using RIE ion etchings
The etching of silicon nitride, lead district 10 is formed after removing photoresist at gold interconnection line endpoints.
H, the BCB bonding glue for coating light sensitivity, then in conjunction with mask plate（Mask 5）, form graphical after exposure, development
BCB bonding glue 11.
I, glass cover-plate 12 are bonded glue 11 by BCB with device and are bonded together, and carry out the solidification of BCB glue, and device is complete
Into.
Heat convection type micro-machine acceleration transducer of the present invention is produced by process above step.With reference to Fig. 1's
Overall structure diagram is illustrated to the principle of the present invention.
Reference resistance is produced on aluminum oxide top, be connected with adding thermal resistance by external circuitses formed closed loop plus
Thermal resistance controls circuit, and the control circuit is used to realize computer heating control and temperature compensation function.The effect of sensing resistor is detection
The change in the temperature field of adding thermal resistance both sides, after adding thermal resistance is heated to the air in closed cavity, in no acceleration
In the case of, the air in closed chamber carries out free convection, and temperature field keeps constant, is symmetrically disposed at the biography on adding thermal resistance both sides
The temperature field that sensing resistor is perceived is identical, and corresponding resistance value is also equal, then passes through external circuitses, the voltage of both sides output
Value is identical, and the difference amplifier of external detection circuit is output as 0；When to one a certain sensitivity side as shown in Figure 1 of sensor application
To acceleration when, the balance in temperature field is broken, and the resistance value size for making both sides sensing resistor occurs for the change in temperature field
Change, so, a differential signal can be measured by external detection circuit, and then measure acceleration.Due to the temperature of material
Spend sensitiveness very strong, heat convection type micro-machine acceleration transducer precision of the present invention is high, performance is good.The present invention is related to simultaneously
And the micro-machine acceleration transducer based on thermal convection principle designed by it is rational in infrastructure, selected materials performance is good, thus system
The sensor reliability made is good, and intensity is high, and manufacture craft is simple, and high yield rate can meet production in enormous quantities.
Claims (8)
1. the micro-machine acceleration transducer based on thermal convection principle, it is characterised in that：
Polyimide film including first substrate and its upper surface, reference area aluminum oxide film；
The RTD that is produced on film, it is produced on film and is connected to access the golden interconnection line for picking out signal with RTD；
It is produced on the outermost layer silicon nitride protective layer on whole chip；
Glass cover-plate together with the wafer bonding of first substrate；
Described RTD has four parts altogether, including：
One adding thermal resistance；
Two identical sensing resistors, the symmetrically placed both sides in adding thermal resistance；
One reference resistance；
All RTDs are serpentine arrangement.
2. micro-machine acceleration transducer according to claim 1, it is characterised in that：Described Kapton thickness
For 2~200 microns.
3. micro-machine acceleration transducer according to claim 1, it is characterised in that：Described reference area is sub- in polyamides
A cuboid groove of formation, 30~3000 microns of the length of groove, 20~2000 microns of width, depth are etched on amine film
2~200 microns, described aluminum oxide film fill up reference area and upper surface it is smooth and with other planes formation same plane.
4. micro-machine acceleration transducer according to claim 1, it is characterised in that：The adding thermal resistance, length 20~
6000 microns, 1~100 micron of width, 0.1~10 micron of thickness；Two sensing resistor length and widths, thickness and shape all same,
For 20~6000 microns of length, 1~100 micron of width, 0.1~10 micron of thickness；One reference resistance, length 20~20000
Micron, 1~100 micron of width, 0.1~10 micron of thickness.
5. micro-machine acceleration transducer according to claim 1, it is characterised in that：Described golden interconnection line main part
100~2000 microns of width, 1~10 micron of thickness.
6. micro-machine acceleration transducer according to claim 1, it is characterised in that：Described silicon nitride protective layer thickness
0.3~3 micron, there is the square perforate that the length of side is 100~2000 microns at the end points of golden interconnection line, as bonding region, use
Lead is connect during encapsulating.
7. micro-machine acceleration transducer according to claim 1, it is characterised in that：Described glass cover-plate passes through BCB
Glue is bonded together with wafer bonding, closed cavity is formed.
8. the micro-machine acceleration transducer preparation method described in a kind of claim 1, it is characterised in that：
Step 1, on the burnishing surface of first substrate form Kapton；
Step 2, etching polyimide film formation reference area；
Step 3, in reference area fill up aluminum oxide；
Step 4, on the aluminum oxide film of reference area and on the polyimide film in other regions form RTD；
Step 5, the golden interconnection line of formation on polyimide film；
Step 6, the face full wafer for having carried out structure in first substrate form silicon nitride film；
Step 7, etch nitride silicon thin film, bonding region is formed at the gold interconnection line endpoints；
Step 8, using BCB bonding techniques glass cover-plate formed closed cavity together with wafer bonding.
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| CN201710435499.2A CN107192849B (en) | 2017-06-11 | 2017-06-11 | Micro-mechanical acceleration sensor based on heat convection principle |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111060715A (en) * | 2019-12-24 | 2020-04-24 | 中国航空工业集团公司北京长城航空测控技术研究所 | Acceleration sensor based on thermopile |
| CN111707844A (en) * | 2020-05-29 | 2020-09-25 | 上海应用技术大学 | Wind speed sensor and preparation method thereof |
| WO2022156819A1 (en) * | 2021-01-25 | 2022-07-28 | The Hong Kong University Of Science And Technology | Liquid-based cmos mems micro thermal convective accelerometer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111707844A (en) * | 2020-05-29 | 2020-09-25 | 上海应用技术大学 | Wind speed sensor and preparation method thereof |
| CN111707844B (en) * | 2020-05-29 | 2022-02-11 | 上海应用技术大学 | Wind speed sensor and preparation method thereof |
| WO2022156819A1 (en) * | 2021-01-25 | 2022-07-28 | The Hong Kong University Of Science And Technology | Liquid-based cmos mems micro thermal convective accelerometer |
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