CN206281871U - A kind of micro-acceleration gauge of the complete silicon structure of Double deference - Google Patents
A kind of micro-acceleration gauge of the complete silicon structure of Double deference Download PDFInfo
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- CN206281871U CN206281871U CN201621408705.8U CN201621408705U CN206281871U CN 206281871 U CN206281871 U CN 206281871U CN 201621408705 U CN201621408705 U CN 201621408705U CN 206281871 U CN206281871 U CN 206281871U
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Abstract
The utility model discloses the micro-acceleration gauge and its manufacture method of a kind of Double deference complete silicon structure, it is related to microelectromechanical systems field.The utility model by way of substrate is coupled, makes 4 similar cant beam sensitive-mass block structures that basically identical deformation all to occur in the presence of external environment condition first；Then by the detection method a=k (Δ Ca Δ Cb) of Double deference, the Disturbance Rejection that external environment is caused is fallen, so as to improve the long-time stability and temperature stability of device.
Description
Technical field
The utility model is related to microelectromechanical systems field, more specifically to a kind of complete silicon structure of Double deference
Micro-acceleration gauge.
Background technology
Using the silicon micro accerometer of capacitance detecting because the processing of its technique is ripe, certainty of measurement is high, in commercial market and
It is obtained on military markets and is widely applied.However, these micro-acceleration gauges are all easily disturbed by external environment, and produce
Raw zero drift or temperature drift, so as to limit its application in high accuracy field of inertia measurement.
State Intellectual Property Office was on July 28th, 2010, and the invention for disclosing a Publication No. CN101786593A is special
Profit, the patent of invention discloses a kind of processing method of differential type high-precision accelerometer.Accelerometer include from top to bottom according to
The electric lids of secondary connection, the movable silicon construction package of beam-mass block structure, bottom electrode cover plate.The method includes：Using glass
Piece or monocrystalline silicon wafer process the electric pole plate and bottom electrode plate as substrate；Using double device layer SOI monocrystalline silicon wafers as
Substrate, processes the movable silicon construction package of the beam-mass block structure；The upper and lower battery lead plate that substrate is processed is movable with described
Silicon structure component is connected based on bonding pattern.The invention is the processing for completing movable silicon construction package using a piece of silicon wafer,
High temperature silicon-silicon bonding the technique for avoiding usual use prepares movable silicon construction package, reduces technology difficulty, reduces highest
Technological temperature, eliminates silicon-silicon bond and closes the bonding stress problem for introducing.Also, beam-mass block structure has versatility.
But during actual use, the micro-acceleration gauge of this single Differential Detection formula can all be subject to external environment
Interference（Encapsulation stress, thermal stress etc.）, stress is transmitted on mems chip by substrate then so that micro-structural occurs shape
Become.For example, when ambient temperature is raised, because the thermal coefficient of expansion of base material and mems chip is mismatched, beam-sensitivity matter
Gauge block structure can all occur a certain amount of skew in the presence of thermal stress.This skew is cannot to be declined acceleration by traditional capacitance
Spend single difference detecting method of meter（ΔC=C1-C2）Suppressed, so as to bring zero drift or the temperature of micro-acceleration gauge
Drift, ultimately results in the hydraulic performance decline of product.
The content of the invention
In order to overcome defect present in above-mentioned prior art and deficiency, the utility model provides a kind of the complete of Double deference
The micro-acceleration gauge of silicon structure.The micro-acceleration sensor that the utility model is provided, first by way of substrate is coupled, makes 4
All there is basically identical deformation in the presence of external environment condition in individual similar cant beam-sensitive-mass block structure；Then by double
The detection method a=k (Δ Ca- Δ Cb) of difference, the Disturbance Rejection that external environment is caused is fallen, so as to improve the long-term of device
Stability and temperature stability.
The utility model is achieved through the following technical solutions：
A kind of complete silicon structure micro-acceleration gauge of Double deference, it is characterised in that：Including upper layer of silicon cover plate, middle sensitivity silicon knot
Structure layer and lower floor's soi wafer cover plate；The upper layer of silicon cover plate, middle sensitivity silicon structural layer and lower floor's soi wafer cover plate are adopted
Prepared with anisotropic wet etching process, and close to form an overall knot closing, being centrosymmetric by silicon-silicon bond
Structure；Sensitivity silicon structural layer includes four by particular orientation distribution, the orthogonal sensitive-mass block-oblique cantilever beam knot put in the middle of described
Structure；The sensitive-mass block-oblique cantilever beam structure and upper bottom crown constitute one group of Differential Detection electric capacity；Four groups of Differential Detections
Electric capacity is coupled by one piece of silicon base, so as to realize basically identical deformation in extraneous environmental perturbation；It is described
Every two groups of Differential Detection electric capacity is linked together by metal lead wire again, by secondary Difference Calculation come to orientation
Acceleration is detected, and has curbed the interference of external environment simultaneously；Four groups of Differential Detection electric capacity can in opposite two it is orthogonal
The acceleration of direction x-axis and y-axis is measured.
The sensitive-mass block of the sensitive-mass block-oblique cantilever beam structure is supported by a monocline cantilever beam, described
The oblique cantilever beam of four sensitive-mass block-oblique cantilever beam structures is in mirror.
The section of the oblique cantilever beam is parallelogram, and upper and lower surface is made up of the crystal face of monocrystalline silicon 100, both side surface by
The crystal face of monocrystalline silicon 111 is constituted.
There is certain angle in the sensitive direction of principal axis of the oblique cantilever beam, therefore each mass is simultaneously with silicon chip plane
To two acceleration sensitives of normal axis.
The angle is 35.3o.
Lower floor's soi wafer cover plate is by two-layer silicon base and centre SiO2Buried regions is constituted；The upper strata silicon base is by depth
The trench isolation of corrosion is into four pieces of individual electrode structures；Lower floor's silicon base is complete to link together, and composition one is smooth
Base silicon substrate, it is achieved thereby that the substrates coupling of four groups of differential capacitance detection structures.
Wire bonding is respectively arranged with the upper layer of silicon cover plate, middle sensitivity silicon structural layer and lower floor's soi wafer cover plate
Pad, there is consistent, the symmetrical lead pad area of four groups of shapes on each floor, the material of pad is gold or aluminium.The lead
Bond pad area will also realize two groups of difference again of Differential Detection electric capacity in addition to realizing conventional electrode and draw function
Calculate, specifically：I.e. the Top electrode of differential capacitance a is connected with the bottom electrode of differential capacitance b, the bottom electrode of a and the Top electrode of b
It is connected, a is connected with the target of b, then these three electrodes are drawn respectively.
The upper layer of silicon cover plate and middle sensitivity silicon structural layer are made using the low resistance monocrystalline silicon piece of N-shaped 100, and thickness is
380μm；Lower floor's soi wafer cover plate is made using the low-resistance soi wafer of N-shaped 100, by upper and lower two-layer silicon base and centre
SiO2Buried regions is constituted, and gross thickness is 380 μm, and upper and lower silicon substrate layer thickness is equal.
In the middle of described SiO is disposed with the housing of the tow sides of sensitivity silicon structural layer2Insulating barrier；SiO2The thickness of insulating barrier
Spend is 2 μm.The thermal oxide SiO2Insulating barrier is used for electrical insulation, and determines the initial distance value of detection electric capacity.
A kind of manufacture method of the micro-acceleration gauge of the complete silicon structure of Double deference, it is characterised in that：Comprise the following steps：
A. from the monocrystalline silicon piece of the low resistance twin polishing of N-shaped 100 that thickness is 380 μm, one layer of medium mask is first grown
Layer（Silica or silicon nitride）, then process four by the anisotropic wet etching process of dual surface lithography technology and monocrystalline silicon
Individual completely the same Top electrode；
B. it is front-back two-sided while the SiO of the μ m-thick of thermal oxide 2 again from the monocrystalline silicon piece as step A2And by light
Carve and etching process processes SiO2Insulating barrier, then deposits one layer of silicon nitride mask layer, finally by dual surface lithography technology and
Anisotropic wet etching process processes that shape is similar, the orthogonal cantilever beam structure of four groups of sensitive-mass blocks-tiltedly put；
C. the low-resistance soi wafer of N-shaped 100, its Si/ SiO are selected2/ Si is 190/0.5/190 μm, then with step A
Equally, by anisotropic wet etching process, four consistent bottom electrodes of shape are processed in upper surface, lower surface is processed into
One complete base silicon substrate；
D. the three-layer silicon wafer that will be processed, is bonded together by way of high temperature silicon-silicon melts bonding；
E. using the method for hard mask, layer of metal pad is sputtered in wire bond pads area；
F. the packaging technologies such as wafer cutting, chip paster, wire bonding and sealing cap are completed, is realized and the collection for detecting circuit
Into.
Compared with prior art, the beneficial technique effect that the utility model is brought shows：
1st, by four groups of special sensitive-mass block-oblique cantilever beam structures and substrate coupling technique put, opposite is realized
The Double deference detection of interior x-axis and y-axis acceleration, compared with traditional single differential capacitance type detection method, can be by again
Difference mask the interference of external environment, such as external disturbance, encapsulation stress or thermal stress etc. cause sensitive microstructure to occur
Slight deformation, so as to improve the long-time stability and temperature stability of device.
2nd, sensitive-mass block is supported using the oblique cantilever beam structure of single-ended fixation so that each mass is simultaneously to two
The acceleration sensitive of individual normal axis；Single-ended clamped connected mode can reduce the rigidity of spring beam simultaneously, it is to avoid due to remnants
The beam warpage that stress is caused, and the torsion phenomenon in motion process can be avoided by structural dimension optimization；
3rd, lower floor's cover plate selects soi wafer so that four groups of differential capacitance detection structures pass through a complete silicon base coupling
It is combined, basically identical deformation can occurs in the presence of external environment condition；And ensure that in mems chip main body still
It is complete silicon structure, it is to avoid the different problem of the thermal coefficient of expansion of si-glass structure, is favorably improved the heat endurance of device；
4th, micro electromechanical structure is all prepared using the anisotropic wet etching process of silicon, can be according to range and precision
The initialized gap values of the size, the size of cantilever beam and electric capacity of demand adjustment mass, have widened the use scope of device, and increase
The big flexibility of design.
5th, capacitance gap is prepared using the method for thermal oxide, with uniformity in face very high and the two-sided uniformity of silicon chip,
The accuracy of initial capacitance and the produceability of product can be improved.
6th, three-layer silicon wafer is fitted together by the way of high-temperature fusion bonding, when the process of high temperature can discharge bonding
Stress simultaneously removes the pollutant of bonded interface, can improve the stability of product.
7th, beside double-shaft micro-accelerometer in face of the present utility model, then a traditional single difference pendulum-type can be added
Micro-acceleration gauge；Method due to using Planar integration, this mode avoids assembly error when three axles are assembled, and reduces
The volume of sensor.
Brief description of the drawings
Fig. 1 is overall structure diagram of the present utility model.
Fig. 2 is the schematic diagram after three-decker of the present utility model splits.
Fig. 3 is the top view of sensitivity silicon structural layer in the middle of of the present utility model.
Fig. 4 is the schematic diagram of sensitivity silicon structural layer in the middle of of the present utility model.
Fig. 5 is the profile in Fig. 3 along A-A and B-B.
Fig. 6 is the schematic diagram of upper layer of silicon cover plate of the present utility model.
Fig. 7 is the schematic diagram of lower floor's soi wafer cover plate of the present utility model.
Fig. 8 be traditional single differential type micro-acceleration gauge when ambient temperature is raised, it is imitative that micro-structural is deformed upon
True schematic diagram.
Fig. 9 be micro-acceleration gauge of the present utility model when ambient temperature is raised, the emulation that micro-structural is deformed upon
Schematic diagram.
Reference：1st, upper layer of silicon cover plate, 11, Top electrode, 12, upper strata wire bond pads area, 2, middle sensitivity silicon knot
Structure layer, 21, sensitive-mass block, 22, oblique cantilever beam, 23, SiO2Insulating barrier, 24, housing, 25, middle leads bond pad area,
3rd, lower floor's soi wafer cover plate, 31, bottom electrode, 32, base silicon substrate, 33, SiO2Buried regions, 34, wire bond pads area of lower floor.
Specific embodiment
The utility model is further described below in conjunction with the accompanying drawings.
Embodiment 1
As the preferred embodiment of the utility model one, present embodiment discloses：
A kind of complete silicon structure micro-acceleration gauge of Double deference, including upper layer of silicon cover plate 1, middle sensitivity silicon structural layer 2 and under
Layer soi wafer cover plate 3；The upper layer of silicon cover plate 1, middle sensitivity silicon structural layer 2 and lower floor soi wafer cover plate 3 are using each
Prepared by anisotropy wet corrosion technique, and close to form an overall structure closing, being centrosymmetric by silicon-silicon bond；Institute
Stating middle sensitivity silicon structural layer 2 includes four by particular orientation distribution, the orthogonal sensitive-mass block-oblique cantilever beam structure put；
The sensitive-mass block-oblique cantilever beam structure and upper bottom crown constitute one group of Differential Detection electric capacity；Four groups of Differential Detection electric capacity lead to
One piece of silicon base is crossed to be coupled；Every two groups of Differential Detection electric capacity is linked together by metal lead wire.
Embodiment 2
As the utility model another embodiment, with reference to Figure of description 1-9, present embodiment discloses：
A kind of complete silicon structure micro-acceleration gauge of Double deference, including upper layer of silicon cover plate 1, middle sensitivity silicon structural layer 2 and under
Layer soi wafer cover plate 3；The upper layer of silicon cover plate 1, middle sensitivity silicon structural layer 2 and lower floor soi wafer cover plate 3 are using each
Prepared by anisotropy wet corrosion technique, and close to form an overall structure closing, being centrosymmetric by silicon-silicon bond；Institute
Stating middle sensitivity silicon structural layer 2 includes four by particular orientation distribution, the orthogonal sensitive-mass block-oblique cantilever beam structure put；
The sensitive-mass block-oblique cantilever beam structure and upper bottom crown constitute one group of Differential Detection electric capacity；Four groups of Differential Detection electric capacity lead to
One piece of silicon base is crossed to be coupled；Every two groups of Differential Detection electric capacity is linked together by metal lead wire；
The sensitive-mass block 21 of the sensitive-mass block-oblique cantilever beam structure is supported by a monocline cantilever beam 22,
The oblique cantilever beam 22 of four sensitive-mass blocks-oblique cantilever beam structure is in mirror；The section of the oblique cantilever beam 22 is
Parallelogram, upper and lower surface is made up of the crystal face of monocrystalline silicon 100, and both side surface is made up of the crystal face of monocrystalline silicon 111.
There is certain angle with silicon chip plane in the sensitive direction of principal axis of the oblique cantilever beam 22；The angle is 35.3o.
Embodiment 3
As the utility model another embodiment, with reference to Figure of description 1-9, present embodiment discloses：
A kind of complete silicon structure micro-acceleration gauge of Double deference, including upper layer of silicon cover plate 1, middle sensitivity silicon structural layer 2 and under
Layer soi wafer cover plate 3；The upper layer of silicon cover plate 1, middle sensitivity silicon structural layer 2 and lower floor soi wafer cover plate 3 are using each
Prepared by anisotropy wet corrosion technique, and close to form an overall structure closing, being centrosymmetric by silicon-silicon bond；Institute
Stating middle sensitivity silicon structural layer 2 includes four by particular orientation distribution, the orthogonal sensitive-mass block-oblique cantilever beam structure put；
The sensitive-mass block-oblique cantilever beam structure and upper bottom crown constitute one group of Differential Detection electric capacity；Four groups of Differential Detection electric capacity lead to
One piece of silicon base is crossed to be coupled；Every two groups of Differential Detection electric capacity is linked together by metal lead wire；
The sensitive-mass block 21 of the sensitive-mass block-oblique cantilever beam structure is supported by a monocline cantilever beam 22,
The oblique cantilever beam 22 of four sensitive-mass blocks-oblique cantilever beam structure is in mirror；The section of the oblique cantilever beam 22 is
Parallelogram, upper and lower surface is made up of the crystal face of monocrystalline silicon 100, and both side surface is made up of the crystal face of monocrystalline silicon 111；
There is certain angle with silicon chip plane in the sensitive direction of principal axis of the oblique cantilever beam 22；The angle is 35.3o.
Lower floor's soi wafer cover plate 3 is by two-layer silicon base and centre SiO2Buried regions 33 is constituted；The upper strata silicon base by
The trench isolation of deep etch is into four pieces of individual electrode structures；Lower floor's silicon base is complete to link together, and constitutes one and puts down
Whole base silicon substrate 32.
Leaded key is respectively provided with the upper layer of silicon cover plate 1, middle sensitivity silicon structural layer 2 and lower floor soi wafer cover plate 3
Pad is closed, there is consistent, the symmetrical lead pad area of 4 groups of shapes on each floor, upper strata wire bond pads area 12, centre draws
Line bonding pad area 25 and wire bond pads area of lower floor 34, the material of pad is gold or aluminium.
The upper layer of silicon cover plate 1 and middle sensitivity silicon structural layer 2 are made using the low resistance monocrystalline silicon piece of N-shaped 100, thickness
It is 380 μm；Lower floor's soi wafer cover plate 3 is made using the low-resistance soi wafer of N-shaped 100, by upper and lower two-layer silicon base and
Middle SiO2Buried regions 33 is constituted, and gross thickness is 380 μm, and upper and lower silicon substrate layer thickness is equal.
In the middle of described SiO is disposed with the housing 24 of the tow sides of sensitivity silicon structural layer2Insulating barrier 23；SiO2Insulating barrier
23 thickness is 2 μm.
Embodiment 4
As the utility model another embodiment, the utility model Double deference is applied to present embodiment discloses one kind
Complete silicon structure micro-acceleration gauge manufacture method, comprise the following steps：
A. from the monocrystalline silicon piece of the low resistance twin polishing of N-shaped 100 that thickness is 380 μm, one layer of medium mask is first grown
Layer（Silica or silicon nitride）, then process four by the anisotropic wet etching process of dual surface lithography technology and monocrystalline silicon
Individual completely the same Top electrode 11；
B. it is front-back two-sided while the SiO of the μ m-thick of thermal oxide 2 again from the monocrystalline silicon piece as step A2And by light
Carve and etching process processes SiO2Insulating barrier, then deposits one layer of silicon nitride mask layer, finally by dual surface lithography technology and
Anisotropic wet etching process processes that shape is similar, the orthogonal cantilever beam structure of four groups of sensitive-mass blocks-tiltedly put；
C. the low-resistance soi wafer of N-shaped 100 is selected（Si/ SiO2/Si: 190/0.5/190μm）, then with step A mono-
Sample, by anisotropic wet etching process, four consistent bottom electrodes of shape 31 is processed in upper surface, and lower surface is processed into
One complete base silicon substrate；
D. the three-layer silicon wafer that will be processed, is bonded together by way of high temperature silicon-silicon melts bonding；
E. using the method for hard mask, layer of metal pad is sputtered in wire bond pads area 12,25,34；
F. the packaging technologies such as wafer cutting, chip paster, wire bonding and sealing cap are completed, is realized and the collection for detecting circuit
Into.
This discovery carries out acceleration detection using the structure of sensitive-mass block-oblique cantilever beam.Because its supporting cantilever is different
In traditional cantilever design, and it is comparable to silicon chip surface and have rotated 54.7 °, so every a pair of sensitive-mass block-oblique cantilever beam
Structure is simultaneously to two acceleration sensitives of detection axle.As shown in figure 4, the Differential Detection capacitance Δ Ca=Ca of sensitive structure a
Under upper-Ca=- k1ay+k2az, on the Differential Detection capacitance Δ Cb=Cb of sensitive structure b under-Cb=k1ay+k2az.By Δ
- Cb is upper under-Ca under+Cb on Ca- Δs Cb=Ca=and -2k1ay detect second difference of electric capacity, you can extrapolate y-axis direction
Acceleration ay.The detection of x-axis directional acceleration is similar.
As shown in figure 9, micro-acceleration gauge of the present utility model is when ambient temperature is raised, due to material heat expansion system
Several differences, its sensitive microstructure can occur the warpage of definite shape.Three layers of upper and lower cover plates of silicon structure can all occur recessed
Deformation, and varying dimensions gap is little；It is crucial that, four cant beam-mass block structures all there occurs having a down dip by a relatively large margin,
And the amplitude that has a down dip is suitable.Difference Calculation is taken turns by the second of micro-acceleration gauge of the present utility model（Ay is proportional to Δ Ca- Δs Cb）,
This external environment can be changed brought deformation to balance out, thus improve the temperature stability of integral device.
Micro-acceleration sensor based on complete silicon structure of the present utility model, is coupled by substrate and the method for Double deference is entered
The accurate capacitance detecting of row, with good temp characteristic, anti-external environmental interference ability is strong, certainty of measurement is high, processing technology is ripe,
The simple advantage of assemble method；And, by the traditional single difference pendulum-type micro-acceleration gauge of one group appropriate of increase, you can constitute
For the high accuracy micro-acceleration gauge group of three shaft detections, suffer from being widely applied prospect in dual-use in the market.
The utility model is limited only to absolutely not embodiment, and that is made on the premise of the utility model objective is not departed from is various
Change belongs to protection domain of the present utility model.
Claims (9)
1. the complete silicon structure micro-acceleration gauge of a kind of Double deference, it is characterised in that：Including upper layer of silicon cover plate（1）, middle sensitivity silicon
Structure sheaf（2）With lower floor's soi wafer cover plate（3）；The upper layer of silicon cover plate（1）, middle sensitivity silicon structural layer（2）With lower floor SOI
Silicon chip cover plate（3）Be using anisotropic wet etching process prepare, and closed by silicon-silicon bond to be formed one closing, be in
Centrosymmetric overall structure；Sensitivity silicon structural layer in the middle of described（2）Including four by particular orientation distribution, it is orthogonal put it is quick
Sense mass-oblique cantilever beam structure；The sensitive-mass block-tiltedly cantilever beam structure and upper bottom crown one group of Differential Detection of composition are electric
Hold；Four groups of Differential Detection electric capacity are coupled by one piece of silicon base；Every two groups of Differential Detection electric capacity is connected by metal lead wire
It is connected together.
2. the complete silicon structure micro-acceleration gauge of a kind of Double deference as claimed in claim 1, it is characterised in that：The sensitive-mass
The sensitive-mass block of block-oblique cantilever beam structure（21）It is by a monocline cantilever beam（22）Support, four sensitive-mass
The oblique cantilever beam of block-oblique cantilever beam structure（22）In mirror.
3. the complete silicon structure micro-acceleration gauge of a kind of Double deference as claimed in claim 1 or 2, it is characterised in that：It is described tiltedly outstanding
Arm beam（22）Section be parallelogram, upper and lower surface is made up of the crystal face of monocrystalline silicon 100, and both side surface is brilliant by monocrystalline silicon 111
Face is constituted.
4. the complete silicon structure micro-acceleration gauge of a kind of Double deference as claimed in claim 3, it is characterised in that：The oblique cantilever beam
（22）Sensitive direction of principal axis and silicon chip plane there is certain angle.
5. the complete silicon structure micro-acceleration gauge of a kind of Double deference as claimed in claim 4, it is characterised in that：The angle is
35.3º。
6. the complete silicon structure micro-acceleration gauge of a kind of Double deference as claimed in claim 1, it is characterised in that：The lower floor SOI
Silicon chip cover plate（3）By two-layer silicon base and centre SiO2Buried regions（33）Constitute；The upper strata silicon base by deep etch groove every
Absolutely into four pieces of individual electrode structures；Lower floor's silicon base is complete to link together, and constitutes a smooth base silicon substrate
（32）.
7. the complete silicon structure micro-acceleration gauge of a kind of Double deference as claimed in claim 1, it is characterised in that：The upper layer of silicon lid
Plate（1）, middle sensitivity silicon structural layer（2）With lower floor's soi wafer cover plate（3）On be respectively arranged with wire bond pads, on each layer
There is consistent, the symmetrical lead pad area of four groups of shapes（12、25、34）, the material of pad is gold or aluminium.
8. the complete silicon structure micro-acceleration gauge of a kind of Double deference as described in claim 1 or 7, it is characterised in that：The upper strata
Silicon cover plate（1）With middle sensitivity silicon structural layer（2）Made using the low resistance monocrystalline silicon piece of N-shaped 100, thickness is 380 μm；It is described
Lower floor's soi wafer cover plate（3）Made using the low-resistance soi wafer of N-shaped 100, by upper and lower two-layer silicon base and centre SiO2Bury
Layer（33）Constitute, gross thickness is 380 μm, and upper and lower silicon substrate layer thickness is equal.
9. the complete silicon structure micro-acceleration gauge of a kind of Double deference as claimed in claim 1 or 2, it is characterised in that：The centre
Sensitive silicon structural layer（2）Tow sides housing（24）On be disposed with SiO2Insulating barrier（23）；SiO2Insulating barrier（23）Thickness
It is 2 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621408705.8U CN206281871U (en) | 2016-12-21 | 2016-12-21 | A kind of micro-acceleration gauge of the complete silicon structure of Double deference |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201621408705.8U CN206281871U (en) | 2016-12-21 | 2016-12-21 | A kind of micro-acceleration gauge of the complete silicon structure of Double deference |
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ID=59073030
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106501548A (en) * | 2016-12-21 | 2017-03-15 | 中国工程物理研究院电子工程研究所 | A kind of micro-acceleration gauge of the complete silicon structure of Double deference and its manufacture method |
| CN108344881A (en) * | 2018-02-10 | 2018-07-31 | 中国工程物理研究院电子工程研究所 | A kind of sensitive structure of closed loop micro-acceleration gauge |
-
2016
- 2016-12-21 CN CN201621408705.8U patent/CN206281871U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106501548A (en) * | 2016-12-21 | 2017-03-15 | 中国工程物理研究院电子工程研究所 | A kind of micro-acceleration gauge of the complete silicon structure of Double deference and its manufacture method |
| CN108344881A (en) * | 2018-02-10 | 2018-07-31 | 中国工程物理研究院电子工程研究所 | A kind of sensitive structure of closed loop micro-acceleration gauge |
| CN108344881B (en) * | 2018-02-10 | 2020-04-03 | 中国工程物理研究院电子工程研究所 | Sensitive structure of closed-loop micro-accelerometer |
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