CN104062464B - MEMS piezoresistive accelerated speed and pressure integration sensor and manufacturing method - Google Patents
MEMS piezoresistive accelerated speed and pressure integration sensor and manufacturing method Download PDFInfo
- Publication number
- CN104062464B CN104062464B CN201410264513.3A CN201410264513A CN104062464B CN 104062464 B CN104062464 B CN 104062464B CN 201410264513 A CN201410264513 A CN 201410264513A CN 104062464 B CN104062464 B CN 104062464B
- Authority
- CN
- China
- Prior art keywords
- pressure
- sensor
- silicon
- piezoresistive
- pressure drag
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention discloses an MEMS piezoresistive accelerated speed and pressure integration sensor based on anodic bonding packaging and a manufacturing method thereof. The sensor integrates a piezoresistive acceleration sensor and a piezoresistive pressure sensor simultaneously and has a sandwich structure composed of first bonding glass, a silicon substrate and second bonding glass. The MEMS piezoresistive accelerated speed and pressure integration sensor is novel in structure, low in weight, small in size, good in stability and high in anti-pollution capacity. Besides, according to the MEMS piezoresistive accelerated speed and pressure integration sensor, the same process and different design modes are used for the same chip, and accordingly pressure measurement and acceleration speed measurement are achieved, and the process procedures are simple. The sensor has certain application prospects in the fields of aerospace, military, automobiles, environment monitoring and the like.
Description
(1) technical field
The present invention relates to piezoresistance type acceleration, pressure integrated sensor in MEMS (MEMS) sensor field and
Its manufacture method, and in particular to it is a kind of based on anode linkage encapsulate MEMS piezoresistive acceleration, pressure integrated sensor and its
Manufacture method.
(2) background technology
Progress and the application demand of small intelligent sensor-based system with micro-processing technology, multiple sensors are on monolithic
It is integrated into a kind of development trend.In the fields such as Aero-Space, military affairs, automobile, environmental monitoring, Jing often will simultaneously measure acceleration
The parameters such as degree, pressure, temperature.But in such applications, due to the strict restriction of environmental suitability, volume, cost and function etc.,
It is required that sensor has miniaturization, integrated, multi-functional feature.Integrated sensor can on the same chip it is integrated it is multiple not
Same sensor, to detect to different physical quantitys simultaneously, and small volume, unit cost are low, in above-mentioned field tool
There is extensive potential application foreground, therefore suffer from increasing concern both at home and abroad.But compare with integrated circuit, sensor
Integrated to seem increasingly difficult, reason is that the operation principle of different sensors and organization plan difference are very big, from operation principle,
Some sensors are resistance sensitivity principles, and some sensors are capacitance-sensitive principles；From from organization plan, some need film
Deng special construction, some then need special sensitive material.Therefore the sensor of these different principles and structure is carried out integrated
Manufacture, needs a set of specific process of research.
(3) content of the invention
It is an object of the invention to provide a kind of based on anode linkage encapsulation technology, surface micro-fabrication, body micro fabrication
MEMS piezoresistive acceleration, pressure integrated sensor and its manufacture method, realize directly by two kinds of sensors on a disk
Integrated manufacture.
For achieving the above object, the technical solution used in the present invention is：
A kind of MEMS piezoresistive acceleration, pressure integrated sensor, described sensor is integrated with pressure resistance type acceleration simultaneously
Degree sensor and piezoresistive pressure sensor, and it is bonded glass sandwich structure with the first bonding glass-silicon base-the second；
Described silicon substrate has been internally formed piezoresistance type acceleration sensor cantilever beam and piezoresistive pressure sensor diaphragm, the front of silicon substrate
Two pressure drag regions are formed with, are respectively pressure drag region and the pressure drag of piezoresistive pressure sensor of piezoresistance type acceleration sensor
Region；The pressure drag region of the piezoresistance type acceleration sensor is located at the upper surface root of piezoresistance type acceleration sensor cantilever beam
Portion, and the light boron diffusion pressure drags of light boron formation 4 are injected with, while the inside of light boron diffusion pressure drag is injected with dense boron and forms dense boron
Ohmic contact regions；The pressure drag region of the piezoresistive pressure sensor is located at the upper surface of piezoresistive pressure sensor diaphragm,
It is injected with light boron and forms 4 light boron and spreads pressure drags, and the inside of light boron diffusion pressure drag is injected with dense boron and forms dense boron ohm and connects
Tactile area；The disposed thereon in two described pressure drag regions has silicon dioxide layer, and silicon dioxide layer disposed thereon has silicon nitride layer, institute
, together as insulating passivation layer, described insulating passivation layer is provided with fairlead, using gold for the silicon dioxide layer stated and silicon nitride layer
Category wire connects two pressure drag regions, and 4 light boron diffusion pressure drags in piezoresistance type acceleration sensor pressure drag region by gold
Category wire constitutes the connection of Hui Sidun full-bridges, and 4 light boron diffusion pressure drags in piezoresistive pressure sensor pressure drag region are led by metal
Line also constitutes the connection of Hui Sidun full-bridges；The disposed thereon of the insulating passivation layer has a non-crystalline silicon, described non-crystalline silicon and the first key
Combined glass glass anode linkage, also, by the use of non-crystalline silicon as step, described non-crystalline silicon is bonded after glass bonding with first and forms one
Individual vacuum cavity, connection piezoresistance type acceleration sensor and piezoresistive pressure sensor；The back side of the silicon substrate is bonded with second
Glass anode linkage, the second described bonding glass carries passage, and described passage is sensed positioned at pressure drag type pressure
The lower section of device diaphragm；The front of the silicon substrate is also formed with dense boron wire, and above the dense boron wire metal pin is connected with,
Dense boron wire connects working sensor area with metal pin.
MEMS piezoresistive acceleration of the present invention, pressure integrated sensor, preferably described silicon substrate is N-shaped (100) silicon chip；It is excellent
The thickness of the non-crystalline silicon of the described insulating passivation layer disposed thereon of choosing is 2～4 μm.
MEMS piezoresistive acceleration of the present invention, pressure integrated sensor operation principle it is as follows：MEMS piezoresistive of the present invention
Acceleration, pressure integrated sensor are based primarily upon the piezoresistive characteristic of monocrystalline silicon after injection boron, piezoresistance type acceleration sensor cantilever
Light boron diffusion pressure drag on beam and piezoresistive pressure sensor diaphragm is subject to after the effect of power, and resistivity changes, by favour
This full-bridge can obtain being proportional to the electric signal output of power change, and by measuring electric signal output surveyed physical quantity is just can know that
The size of (including acceleration and pressure).We inject boron to realize p-type pressure drag to N-shaped (100) crystal orientation silicon chip in the present invention, profit
The isolation of pressure drag is realized with PN junction, due to the anisotropy of the piezoresistance coefficient of pressure drag, the stress of different directions has difference to pressure drag
Impact, in order to increase sensitivity as far as possible, the light boron diffusion in piezoresistance type acceleration sensor pressure drag region of the present invention
The light boron in pressure drag and piezoresistive pressure sensor pressure drag region spreads the arrangement mode of pressure drag：Longitudinal direction is along (1,1,0) of silicon substrate
Crystal orientation direction, laterally along silicon substrate (1, -1,0) crystal orientation directional spreding, longitudinal piezoresistance coefficient, horizontal piezoresistance coefficient are respectively
71.8, -66.3.
In order to improve sensitivity, preferably piezoresistance type acceleration sensor of the present invention is designed for single cantilever beam, described
The light boron diffusion pressure drag in piezoresistance type acceleration sensor pressure drag region is 4, and 2 are symmetrically distributed in the light boron diffusion pressure drag of bridge arm
The region of stress concentration of cantilever beam upper surface root, in addition 2 light boron diffusion pressure drags be symmetrically distributed in zero stress area.Certainly, root
Need that different girder constructions, such as monolateral twin beams, bilateral twin beams, bilateral four beam, four sides four can also be adopted according to different sensitivity
Beam, the beam of four side eight etc..Also, described light boron diffusion pressure drag can also adopt different distribution modes, 4 light boron to spread pressure drag
(can be 4, it is also possible to 8 folding types etc.) connects and composes Hui Sidun full-bridges by plain conductor, and pressure resistance type of the present invention accelerates
Degree sensor metal pin a kind of connected mode be：4th pin connects positive source, senses with pressure drag type pressure in the present invention
Device is shared, and the 5th pin connects piezoresistance type acceleration sensor output and bears, and the 6th pin ground connection, the 7th pin connects piezoresistance type acceleration
Sensor is exported just.
Piezoresistive pressure sensor of the present invention is designed using rectangular film, and 4 light boron spread pressure drag parallel arrangement, make full use of
There is horizontal piezoresistive effect, such piezoresistive pressure sensor bridge arm resistance to be evenly distributed, output linearity degree and uniformity compared with
Good advantage.Certainly, according to different sensitivity needs, described light boron diffusion pressure drag can adopt different distribution modes.
The light boron diffusion pressure drag of piezoresistive pressure sensor of the present invention 4 connects and composes Hui Sidun full-bridges, also, pressure drag by plain conductor
A kind of connected mode of formula pressure sensor metal pin is：First pin connects piezoresistive pressure sensor and exports just, second pipe
Pin is grounded, and three-prong connects piezoresistive pressure sensor output and bears, and the 4th pin connects positive source, adds with pressure resistance type in the present invention
Velocity sensor shares positive source.
Present invention also offers a kind of MEMS piezoresistive acceleration, the manufacture method of pressure integrated sensor, described
Manufacture method carry out as follows：
A) silicon chip is taken as silicon substrate, twin polishing, cleaning, first double-sided deposition layer of silicon dioxide, then one layer of double-sided deposition
Silicon nitride, front dry etching silicon nitride, silica are to silicon substrate top surface；
B) in the long layer of silicon dioxide protective layer of the hot oxygen in silicon substrate front, front photoresist goes out pressure resistance type and accelerates as mask lithography
The pressure drag region of degree sensor and the pressure drag region of piezoresistive pressure sensor, it is then light in two pressure drag region injections respectively
Boron, forms light boron and spreads pressure drag, removes photoresist；
C) front photoresist goes out dense boron conductor area as mask lithography, and makes dense boron Europe by lithography in light boron diffusion pressure drag region
Nurse contact area, is then injected into dense boron, forms the dense boron wire in silicon substrate inside, and is internally formed dense boron ohm in light boron diffusion pressure drag
Contact zone, removes photoresist, annealing；
D) first double-sided deposition layer of silicon dioxide, then one layer of silicon nitride of double-sided deposition, positive silicon dioxide layer and nitridation
Silicon layer is together as insulating passivation layer；
E) front photoresist goes out a point runner region, dry process reaction ion etching (RIE) silicon nitride, titanium dioxide as mask lithography
Silicon exposes the silicon substrate of point runner region to silicon substrate top surface；
F) front deposits one layer of non-crystalline silicon, in point runner region non-crystalline silicon and silicon substrate top surface directly contact；
G) front photoresist goes out working region and metal pin regional graphics as mask lithography, and RIE etchings non-crystalline silicon is extremely
Silicon nitride layer, removes photoresist；
H) front photoresist goes out fairlead as mask lithography, dry method RIE etch silicon nitride, silica to silicon substrate top surface,
Photoresist is removed, fairlead is formed；
I) front deposited metal conductor layer, front photoresist goes out plain conductor and pin figure as mask lithography, and corrosion does not have
There is the metal of photoresist overlay area, remove photoresist, Alloying Treatment forms plain conductor and metal pin；
J) back side photoresist goes out to corrode silicon window as mask lithography, RIE etch silicon nitrides, silica to silicon substrate bottom surface,
Photoresist is removed, silicon nitride, silicon dioxide layer make mask wet etching silicon substrate and form piezoresistance type acceleration sensor, pressure resistance type pressure
Force snesor film；
K), to silicon substrate bottom surface, the back side carries out si-glass anode for the remaining silicon nitride of dry method RIE etched backside, silica
Bonding；
L) front photoresist goes out cantilever beam release profiles as mask lithography, and DRIE cuts through silicon nitride, silica, silicon substrate shape
Into the cantilever beam structure of piezoresistance type acceleration sensor, photoresist is removed；
M) front carries out amorphous silicon-glass anodic bonding；
N) scribing, realizes the encapsulation of one single chip, and scribing makes two bites at a cherry：First time scribing, removes metal pin top
Glass；Structure in burst groove is scratched in second scribing, separates one single chip, completes encapsulation.
In MEMS piezoresistive acceleration of the present invention, the manufacture method step k) of pressure integrated sensor, recommend the back of the body
Face carries out the technological parameter of silicon-glass anodic bonding：300～500V of voltage, 15～20mA of electric current, 300～400 DEG C of temperature,
2000～3000N of pressure, 5～10min of time.
In MEMS piezoresistive acceleration of the present invention, the manufacture method step m) of pressure integrated sensor, recommend just
Face carries out the technological parameter of amorphous silicon-glass anodic bonding：450～1000V of voltage, 15～25mA of electric current, temperature 300～
400 DEG C, 2000～3000N of pressure, 15～25min of time.
Anode linkage technology of the present invention is a kind of prior art, and the technology is well known to those skilled in the art
, its operation principle is：DC power anode is connect into silicon chip, negative pole connects sheet glass, due to performance of the glass under certain high temperature
Similar to electrolyte, and silicon chip, when temperature is increased to 300 DEG C～400 DEG C, resistivity will be down to 0.1 Ω because of intrinsic excitation
M, now the conducting particles in glass is (such as Na+) glass surface of negative electrode is floated under External Electrical Field, and close to silicon
The glass surface of piece leaves negative electrical charge, due to Na+Drift make to produce electric current flowing in circuit, close to the glass surface meeting of silicon chip
Form the space-charge region (or claiming depletion layer) that one layer of very thin width is about several microns.Due to depletion layer it is negatively charged, silicon chip
It is positively charged, so there is larger electrostatic attraction between silicon chip and glass, it is in close contact both, and send out in bonding face
Raw physical-chemical reaction, forms the Si-O covalent bonds of strong bonded, and silicon is securely attached together with glass interface.According to institute
The principle stated, anode linkage technology is not appropriate for used in being bonded of n-type silicon and glass of injection boron, and reason is：P adulterates
Resistor stripe and n-type silicon base constitute a PN junction, when bonding current passes through silicon on glass bonding face in anodic bonding process, 500
The bonding voltage of～1500V causes it to leak electricity easily by the PN junction reverse breakdown near bonding face, destroys in MEMS
Circuit, affects the performance of device.For problem present in above-mentioned existing anode linkage technology, second bonding work of the present invention
Skill makes bonding current as far as possible along silicon-amorphous si-glass direction by the use of non-crystalline silicon as the conductting layer between silicon substrate, glass
Pass through, effectively make described PN junction avoid highfield, finally realize the anode linkage of upper strata non-crystalline silicon and glass, it is demonstrated experimentally that
This amorphous silicon-glass anodic bonding still can guarantee that the bond strength and air-tightness of close si-glass.It is described based on anode key
Closing the MEMS piezoresistive acceleration of encapsulation, the encapsulation of pressure integrated sensor needs, through anode linkage twice, to be bonded for the first time
It is back side silicon-glass anodic bonding, relatively easily realizes, second bonding is the anode key of front non-crystalline silicon and glass
Close, it is relatively difficult, can suitably add strong bonding voltage, increase bonding time.In the present invention, it is bonded with glass also using non-crystalline silicon
Have the advantages that one it is very big, the bonding method avoids the directly contact of glass and silicon, has prevented original glass and silicon key
Close the Na that surface may produce+The pollution of plasma.
In MEMS piezoresistive acceleration of the present invention, pressure integrated sensor structure, front amorphous si-glass bonding process
In, form a vacuum cavity by the use of non-crystalline silicon as step to connect piezoresistance type acceleration sensor and pressure drag type pressure biography
Sensor.Described non-crystalline silicon is used as step, and two sensors share the method for designing of a vacuum cavity and have two very
Significantly advantage：(1) bond area between two sensors is eliminated, MEMS piezoresistive acceleration of the present invention, pressure is reduced
The volume of power integrated sensor, reduces the cost of one single chip；It is direct that (2) first bonding glass need not carry out fluting processing
Just can be bonded.In MEMS piezoresistive acceleration of the present invention, pressure integrated sensor structure, the thickness of vacuum cavity directly takes
Certainly in the thickness of amorphous silicon deposition, can all be affected because amorphous silicon deposition obtains blocked up its consistency, adhesiveness, and can add
The difficulty of big lower step photoetching, so in order to avoid the glass in bonding process and nitridation Si direct bonding, while ensureing non-crystalline silicon
Good performance, test proves that the amorphous silicon thickness in inventive sensor can take 2～4 μm.
The present invention is MEMS piezoresistive acceleration, the pressure integrated sensor using anode linkage encapsulation, and the sensor is same
When be integrated with piezoresistance type acceleration sensor and piezoresistive pressure sensor, recommendation N-shaped (100) silicon chip makees silicon substrate, using table
Face micro-processing technology spreads the cantilever beam of pressure drag, diaphragm and passes as piezoresistance type acceleration with the manufacture of body micro-processing technology with light boron
Sensor, piezoresistive pressure sensor structure, and wafer level packaging is carried out using secondary anode bonding techniques, wherein sun for the first time
Pole bonding adopts silicon-glass anodic bonding, second anode linkage to share bonding current by the use of amorphous silicon layer as intermediate layer,
Protection sensor PN junction, realizes amorphous silicon-glass anodic bonding.MEMS piezoresistive acceleration of the present invention, pressure integrated sensor
Structure is novel, lightweight, small volume, good stability, contamination resistance are strong.Additionally, in the present invention, phase is used on same chip
With technique, realizing pressure measxurement and acceleration analysis both abilities, technological process is simple, using amorphous for different design
The encapsulation of silicon-glass anodic bonding technology solve easily puncture in traditional si-glass anodic bonding process silicon face PN junction and
The shortcomings of being also easy to produce ionic soil.Inventive sensor has certain in fields such as Aero-Space, military affairs, automobile, environmental monitorings
Application prospect.
(4) illustrate
Fig. 1 is MEMS piezoresistive acceleration of the present invention, the cross-sectional view of pressure integrated sensor；
Fig. 2 is MEMS piezoresistive acceleration of the present invention, the top view of pressure integrated sensor；
Fig. 3～Figure 16 is that MEMS piezoresistive acceleration of the present invention, the manufacturing process flow section of pressure integrated sensor show
It is intended to：
Fig. 3 is silicon substrate elder generation double-sided deposition silicon dioxide layer, silicon nitride layer, then front dry etching silicon nitride, titanium dioxide
The schematic diagram of silicon to silicon substrate top surface；
Fig. 4 is the light boron diffusion pressure drag and piezoresistive pressure sensor pressure to form piezoresistance type acceleration sensor pressure drag region
The light boron in resistance region spreads the schematic diagram of pressure drag；
Fig. 5 is the schematic diagram to form dense boron wire and dense boron ohmic contact regions；
Fig. 6 is double-sided deposition silicon dioxide layer, silicon nitride layer, forms the schematic diagram of insulating passivation layer；
Fig. 7 is the schematic diagram for etching point runner region；
Fig. 8 is the schematic diagram of front deposited amorphous silicon；
Fig. 9 is etching non-crystalline silicon, forms the schematic diagram of working sensor region and metal pin regional graphics；
Figure 10 is the schematic diagram to form fairlead；
Figure 11 is the schematic diagram to form plain conductor and metal pin；
Figure 12 is to form piezoresistance type acceleration sensor, the schematic diagram of piezoresistive pressure sensor film；
Figure 13 carries out the schematic diagram of silicon-glass anodic bonding for the back side；
Figure 14 is the schematic diagram of the cantilever beam structure to form piezoresistance type acceleration sensor；
Figure 15 carries out the schematic diagram of amorphous silicon-glass anodic bonding for front；
The schematic diagram that Figure 16 completes to encapsulate for scribing；
In Fig. 1～Figure 16：Silicon dioxide layer, the silicon dioxide layer of 1 '-back side second in the insulating protective layer of 1- fronts,
Silicon nitride layer, the silicon nitride layer of 2 '-back side second, 3- plain conductors, 4- first bonding glass in the insulating protective layer of 2- fronts
The light boron diffusion pressure of the dense boron wire of glass, 5- non-crystalline silicons, 6- metal pins, 7- silicon substrates, 8-, 9- piezoresistive pressure sensors
Dense boron ohmic contact regions, 11- piezoresistance type accelerations sensing inside resistance, the light boron diffusion pressure drag of 10- piezoresistive pressure sensors
Dense boron ohmic contact regions, 13- inside the light boron diffusion pressure drag of the light boron diffusion pressure drag of device, 12- piezoresistance type acceleration sensors
Piezoresistance type acceleration sensor cantilever beam, 14- vacuum cavities, 15- passages, 16- piezoresistive pressure sensor diaphragms,
17- second bonding glass, the silicon dioxide layer of 18- fronts first (being etched afterwards), the silicon dioxide layer of 18 '-back side first,
The silicon nitride layer of 19- fronts first (being etched afterwards), the silicon nitride layer of 19 '-back side first, 20- burst grooves, also, 8a in Fig. 2
～8g represents successively the first～the 7th pin；
Figure 17 is a kind of pin connected mode of MEMS piezoresistive acceleration of the present invention, pressure integrated sensor；
Pin definitions in Figure 17：1. the-the first pin connect piezoresistive pressure sensor export just, 2. the-the second pin ground connection,
3. the-the three-prong connect piezoresistive pressure sensor output it is negative, 4. the-the four pin connect positive source, 5. the-the five pin connect pressure
The output of resistive acceleration transducer is negative, 6. the-the six pin ground connection, 7. the-the seven pin connect piezoresistance type acceleration sensor output
Just.
(5) specific embodiment
Below in conjunction with the accompanying drawings the invention will be further described, but protection scope of the present invention is not limited to that.
As shown in figure 1, a kind of MEMS piezoresistive acceleration, pressure integrated sensor, employ the first bonding glass-
Silicon substrate-the second is bonded glass sandwich structure, and described MEMS piezoresistive acceleration, pressure integrated sensor mainly include：Silicon
Base (7), the piezoresistance type acceleration sensor cantilever beam (13) for measuring individual axis acceleration, the pressure resistance type pressure for measuring pressure
Force snesor diaphragm (16), dense boron wire (8), metal pin (6) be bonded with the second of silicon substrate anode linkage glass (17) and
The first of anode linkage is carried out with non-crystalline silicon (5) be bonded glass (4).
Wherein, the upper surface root for measuring the piezoresistance type acceleration sensor cantilever beam (13) of individual axis acceleration
Light boron is filled with as light boron diffusion pressure drag (11) of piezoresistance type acceleration sensor, and in the light boron of piezoresistance type acceleration sensor
The dense boron of diffusion pressure drag inside injection forms dense boron ohmic contact regions (12), and the pressure drag overlying regions of piezoresistance type acceleration sensor sink
Product has silicon dioxide layer (1) with silicon nitride layer (2) as insulating passivation layer, and fairlead is provided with insulating passivation layer and metal is utilized
Wire (3) connection piezoresistance type acceleration, the pressure drag region of pressure sensor；The pressure drag region of piezoresistance type acceleration sensor includes
4 light boron spread pressure drag, 2 areas of stress concentration that cantilever beam upper surface root is symmetrically distributed in the light boron diffusion pressure drag of bridge arm
Domain, in addition 2 are symmetrically distributed in zero stress area to the light boron diffusion pressure drag of bridge arm, and it is complete to constitute Hui Sidun by plain conductor (3)
Bridging connects, after having one perpendicular to the acceleration of device surface, piezoresistance type acceleration sensor cantilever beam deflection, positioned at pressure
The pressure drag of resistive acceleration transducer cantilever beam upper surface root is acted on by power, and resistivity changes, as shown in Figure 2 pressure
The pressure drag of resistive acceleration transducer cantilever beam upper surface root be located at Hui Sidun full-bridges to bridge, can be with by Hui Sidun full-bridges
Obtain being proportional to the electric signal output of power change, the size of acceleration is just can know that by measuring electric signal output.Using favour this
The design of full-bridge improves the sensitivity of piezoresistance type acceleration sensor part in the present invention and can guarantee that good linear.
Piezoresistive pressure sensor diaphragm (16) can be used for measuring Fluid pressure (including pressure, hydraulic pressure), the pressure drag
The upper surface of formula pressure sensor diaphragm (16) is injected with light boron as light boron diffusion pressure drag (9) of piezoresistive pressure sensor,
The dense boron of the light boron diffusion pressure drag inside injection of piezoresistive pressure sensor forms dense boron ohmic contact regions (10), pressure drag type pressure sensing
The pressure drag region disposed thereon of device has silicon dioxide layer (1) with silicon nitride layer (2) as insulating passivation layer, opens on insulating passivation layer
Leaded hole simultaneously connects piezoresistance type acceleration, the pressure drag region of pressure sensor using plain conductor (3)；Pressure drag type pressure is sensed
Pressure drags are equally spread in the pressure drag region of device comprising 4 light boron, and constitute the connection of Hui Sidun full-bridges by plain conductor (3), when depositing
At one after the pressure of device surface, piezoresistive pressure sensor diaphragm deformation, the pressure drag on pressure diaphragm is received
To the effect of power, resistivity changes, two pressure drag bars of piezoresistive pressure sensor diaphragm upper surface middle part as shown in Figure 2 and
Two, outside pressure drag bar can obtain being proportional to the electricity of power change respectively positioned at Hui Sidun full-bridges to bridge by Hui Sidun full-bridges
Signal output, the size of institute's measuring pressure is just can know that by measuring electric signal output.Improve using the design of Hui Sidun full-bridges
The sensitivity of piezoresistive pressure sensor part and can guarantee that good linear in the present invention.
The encapsulation of chip adopts secondary anode bonding techniques.First time anode linkage is that chip back carries passage (15)
The second bonding glass (17) and the silicon-glass anodic bonding of silicon substrate；Second anode linkage is using amorphous silicon layer as centre
Layer makes bonding current not by PN junction, protects sensor PN junction, realizes the sun that front non-crystalline silicon (5) is bonded glass (4) with first
Pole is bonded, second anode linkage not using silicon on glass bonding the reason for be：Silicon-glass anodic bonding is existed on face
PN junction, strong voltage during bonding easily punctures PN junction, destroys the electric property of circuit.
In order to avoid non-crystalline silicon (5) is bonded the irregularities of glass (4) bonding face with first, it is ensured that the air-tightness of encapsulation,
Described acceleration, pressure integrated sensor does not connect chip operation area and metal pin (6) using plain conductor, but
By the use of dense boron wire (8) working sensor area is connected with metal pin as inner lead.
Such as Fig. 3～Figure 16 so, MEMS piezoresistive acceleration of the present invention, the manufacturing process of pressure integrated sensor
Comprise the steps：
A) as shown in Figure 3：Silicon chip is taken as silicon substrate (7), twin polishing, cleaning, the dioxy of the first two-sided μ m-thick of thermal oxide length 1
SiClx (18), (18 '), then using silicon nitride (19), (19 ') of the two-sided μ m-thick of length 0.1 of low-pressure chemical vapor deposition (LPCVD),
Front dry etching silicon nitride (19), silica (18) are to silicon substrate (7) top surface, while forming the mask layer that silicon is corroded at the back side；
Described silicon substrate is N-shaped (100) silicon chip；
B) as shown in Figure 4：In silicon substrate (7) front, one layer of thin silicon dioxide layer of protection of hot oxygen length (makes injection ion one
Determine to deviate incidence angle in degree, caused with avoiding ion from being located just at the interatomic space of silicon substrate and injecting along a certain crystal orientation
Do not collide generation), front photoresist goes out pressure drag region and the pressure drag type pressure of piezoresistance type acceleration sensor as mask lithography
The pressure drag region of sensor, then in two pressure drag regions injects light boron respectively, forms the light boron of piezoresistance type acceleration sensor
Light boron diffusion pressure drag (9) of diffusion pressure drag (11) and piezoresistive pressure sensor, removes photoresist；
C) as shown in Figure 5：Front photoresist goes out dense boron conductor area as mask lithography, and in piezoresistance type acceleration sensor
Light boron diffusion pressure drag (11) region and piezoresistive pressure sensor light boron diffusion pressure drag (9) region make dense boron Europe by lithography respectively
Nurse contact area, is then injected into dense boron, the dense boron wire (8) in formation silicon substrate inside, and formation piezoresistance type acceleration sensor light
The dense boron Europe inside the light boron diffusion pressure drag of dense boron ohmic contact regions (12) and piezoresistive pressure sensor inside boron diffusion pressure drag
Nurse contact zone (10), removes photoresist, annealing；
D) as shown in Figure 6：Silica (1), (1 ') of the first μ m-thick of LPCVD double-sided depositions 0.2, then LPCVD double-sided depositions
The silicon nitride (2) of 0.2 μ m-thick, (2 '), silicon dioxide layer (1) and silicon nitride layer (2) are together as insulating passivation layer；
E) as shown in Figure 7：Front photoresist goes out a point runner region as mask lithography, dry method RIE etch silicon nitride (2), two
Silica (1) exposes the silicon substrate (7) of point runner region to silicon substrate (7) top surface；
F) as shown in Figure 8：Front using plasma enhanced chemical vapor deposition method (PECVD) deposits one layer of 3 μ m-thick
Non-crystalline silicon (5), in point runner region non-crystalline silicon (5) and silicon substrate (7) top surface directly contact；
G) as shown in Figure 9：Front photoresist goes out working region and metal pin (6) regional graphics, RIE as mask lithography
Etching non-crystalline silicon (5) to silicon nitride layer (2), removes photoresist；
H) as shown in Figure 10：Front photoresist goes out fairlead, dry method RIE etch silicon nitride (2), titanium dioxide as mask lithography
Silicon (1) removes photoresist to silicon substrate (7) top surface, forms fairlead；
I) as shown in figure 11：1 μm of aluminium of front magnetron sputtering one layer, front photoresist goes out plain conductor (3) as mask lithography
And metal pin (6) figure, corrode the aluminium without photoresist overlay area, photoresist is removed, Alloying Treatment forms aluminum conductor
And aluminum pipe pin；
J) as shown in figure 12：Back side photoresist goes out to corrode silicon window as mask lithography, RIE etch silicon nitrides (2 '),
(19 '), silica (1 '), (18 ') to silicon substrate (7) bottom surface remove photoresist, silicon nitride (2 '), (19 '), silicon dioxide layer
It is thin that (1 '), (18 ') act as mask wet etching silicon substrate (7) formation piezoresistance type acceleration sensor, piezoresistive pressure sensor
Film；
K) as shown in figure 13：The remaining silicon nitride (2 ') of dry method RIE etched backside, (19 '), silica (1 '), (18 ')
To silicon substrate (7) bottom surface, the back side carries out silicon-glass anodic bonding；
L) as shown in figure 14：Front photoresist goes out cantilever beam release profiles, deep reaction ion etching as mask lithography
(DRIE) cantilever beam structure that silicon nitride (2), silica (1), silicon substrate (7) form piezoresistance type acceleration sensor is cut through
(13), photoresist is removed；
M) as shown in figure 15：Front carries out amorphous silicon-glass anodic bonding；
N) as shown in figure 16：Scribing, realizes the encapsulation of one single chip, and scribing makes two bites at a cherry：First time scribing, removes gold
Category pin (6) top glass (4)；Structure in burst groove is scratched in second scribing, separates one single chip, completes encapsulation.
Further, MEMS piezoresistive acceleration, the pressure integrated sensor for manufacturing by the technological process, pressure resistance type adds
The cantilever beam of velocity sensor is identical with the thickness of piezoresistive pressure sensor diaphragm, adjusts to obtain both different thickness
The sensitivity of whole piezoresistance type acceleration, piezoresistive pressure sensor, the corrosion of back side silicon can be at twice in the processing step (j)
Complete, as shown in figure 12, the difference of sensitivity is required according to piezoresistance type acceleration, piezoresistive pressure sensor, the present embodiment
The cantilever cantilever thickness of middle piezoresistance type acceleration sensor is 12 μm, and the thickness of piezoresistive pressure sensor diaphragm is 30 μm, this
When need first to corrode piezoresistive pressure sensor back of the body chamber, corrode it is another after depth difference play corrosion, concrete technology flow process is：The back side
Photoresist makees mask lithography and opens piezoresistive pressure sensor back surface corrosion window, and RIE etches away silicon nitride, silica to silicon
Basal surface, silicon nitride, silicon dioxide layer make mask, 40%KOH solution wet etching silicon substrates, corrosion depth control at 18 μm, shape
The corrosion depth for carrying on the back chamber into two sensorses is poor, and then again photoresist makees the back side corruption of mask lithography opening piezoresistance type acceleration sensor
Fenetre mouth, RIE etches away silicon nitride, silica to silicon substrate bottom surface, and 40%KOH solution wet etching silicon substrates to think until corroding
The piezoresistance type acceleration sensor cantilever beam wanted and piezoresistive pressure sensor diaphragm, form thickness different after corroding twice
Piezoresistance type acceleration sensor cantilever beam and piezoresistive pressure sensor diaphragm structure.
Further, in order to ensure the quality of anode linkage twice, by test of many times, The present invention gives MEMS pressures
The optimum bonding parameter of resistive acceleration, pressure integrated sensor, such as table 1, shown in 2.
Table 1 first time anode linkage (si-glass) parameter
Second anode linkage of table 2 (amorphous si-glass) parameter
Further, the present invention in piezoresistance type acceleration sensor cantilever beam except the monolateral single-cantilever shown in Fig. 2
Beyond structure, according to different sensitivity, resonant frequency requirement can also using monolateral double cantilever beam, bilateral twin beams, bilateral four
The structures such as beam, four Bian Siliang, the beam of four side eight, light boron diffusion pressure drag can also be distributed in other positions.Pressure resistance type pressure in the present invention
Force sensor portion is designed using rectangular film, and 4 light boron spread pressure drag parallel arrangement, make full use of horizontal piezoresistive effect, so
Piezoresistive pressure sensor there is bridge arm resistance to be evenly distributed, output linearity degree and the preferable advantage of uniformity, certainly, according to
Different sensitivity needs, and light boron diffusion pressure drag can adopt different distribution modes.
It should be noted that present invention cantilever beam structure size, diaphragm thickness, pressure drag number not to Sensor section
The parameters such as mesh, pressure drag size and arranged distribution are defined, and also the technological parameter of manufacturing process of the present invention are not limited
It is fixed, and the embodiment is only illustrative, and any restriction is not done to the present invention.
Claims (10)
1. a kind of MEMS piezoresistive acceleration, pressure integrated sensor, it is characterised in that described sensor is integrated with pressure simultaneously
Resistive acceleration transducer and piezoresistive pressure sensor, and it is bonded glass Sanming City with the first bonding glass-silicon base-the second
Control structure；Described silicon substrate has been internally formed piezoresistance type acceleration sensor cantilever beam and piezoresistive pressure sensor diaphragm, silicon
The front of base is formed with two pressure drag regions, is respectively pressure drag region and the pressure drag type pressure sensing of piezoresistance type acceleration sensor
The pressure drag region of device；The pressure drag region of the piezoresistance type acceleration sensor is located at the upper of piezoresistance type acceleration sensor cantilever beam
Surface root, and the light boron diffusion pressure drags of light boron formation 4 are injected with, while the inside of light boron diffusion pressure drag is injected with dense boron shape
Into dense boron ohmic contact regions；The pressure drag region of the piezoresistive pressure sensor is located at the upper table of piezoresistive pressure sensor diaphragm
Face, has been also injected into light boron and has formed 4 light boron diffusion pressure drags, and the inside of light boron diffusion pressure drag is injected with dense boron and forms dense boron Europe
Nurse contact zone；The disposed thereon in two described pressure drag regions has silicon dioxide layer, and silicon dioxide layer disposed thereon has silicon nitride
, together as insulating passivation layer, described insulating passivation layer is provided with fairlead for layer, described silicon dioxide layer and silicon nitride layer, profit
Two pressure drag regions are connected with plain conductor, and 4 light boron diffusion pressure drags in piezoresistance type acceleration sensor pressure drag region lead to
Cross plain conductor and constitute the connection of Hui Sidun full-bridges, 4 light boron diffusion pressure drags in piezoresistive pressure sensor pressure drag region are by gold
Category wire also constitutes the connection of Hui Sidun full-bridges；The disposed thereon of the insulating passivation layer has non-crystalline silicon, described non-crystalline silicon and
One bonding glass anode linkage, also, by the use of non-crystalline silicon as step, described non-crystalline silicon is bonded shape after glass bonding with first
Into a vacuum cavity, connection piezoresistance type acceleration sensor and piezoresistive pressure sensor；The back side of the silicon substrate and second
Bonding glass anode linkage, the second described bonding glass carries passage, and described passage is located at pressure drag type pressure
The lower section of sensor diaphragm；The front of the silicon substrate is also formed with dense boron wire, and above the dense boron wire metal is connected with
Pin, dense boron wire connects working sensor area with metal pin.
2. MEMS piezoresistive acceleration as claimed in claim 1, pressure integrated sensor, it is characterised in that described pressure resistance type
The light boron diffusion pressure drag in acceleration transducer pressure drag region and the light boron in piezoresistive pressure sensor pressure drag region spread pressure drag
Arrangement mode is：Longitudinal direction along silicon substrate (1,1,0) crystal orientation direction, laterally along silicon substrate (1, -1,0) crystal orientation directional spreding, longitudinal direction
Piezoresistance coefficient, horizontal piezoresistance coefficient are respectively 71.8, -66.3.
3. MEMS piezoresistive acceleration as claimed in claim 1, pressure integrated sensor, it is characterised in that described pressure resistance type
Acceleration transducer is designed for single cantilever beam, and the light boron diffusion pressure drag in piezoresistance type acceleration sensor pressure drag region is 4, wherein
2 spread the region of stress concentrations that pressure drag is symmetrically distributed in cantilever beam root to the light boron of bridge arm, and in addition 2 light boron spread pressure drag pair
Title is distributed in zero stress area.
4. MEMS piezoresistive acceleration as claimed in claim 1, pressure integrated sensor, it is characterised in that described pressure resistance type
Pressure sensor is designed using rectangular film, and 4 light boron in piezoresistive pressure sensor pressure drag region spread pressure drag parallel arrangement.
5. MEMS piezoresistive acceleration as claimed in claim 1, pressure integrated sensor, it is characterised in that described metal tube
Pin has 7, the first pin connect piezoresistive pressure sensor export just, the second pin ground connection, three-prong connect pressure drag type pressure biography
Sensor output is negative, the 4th pin connects positive source, the 5th pin and connects that piezoresistance type acceleration sensor output is negative, the 6th pin connects
Ground, the 7th pin connect piezoresistance type acceleration sensor and export just, and piezoresistive pressure sensor and piezoresistance type acceleration sensor are common
Use positive source.
6. MEMS piezoresistive acceleration as described in any claim in Claims 1 to 5, pressure integrated sensor, it is special
Levy is that described silicon substrate is N-shaped (100) silicon chip.
7. MEMS piezoresistive acceleration as described in any claim in Claims 1 to 5, pressure integrated sensor, it is special
The thickness for levying the non-crystalline silicon for being described insulating passivation layer disposed thereon is 2～4 μm.
8. MEMS piezoresistive acceleration as claimed in claim 1, the manufacture method of pressure integrated sensor, it is characterised in that institute
The manufacture method stated is carried out as follows：
A) silicon chip is taken as silicon substrate, twin polishing, cleaning, first double-sided deposition layer of silicon dioxide, then one layer of nitridation of double-sided deposition
Silicon, front dry etching silicon nitride, silica are to silicon substrate top surface；
B) in the long layer of silicon dioxide protective layer of the hot oxygen in silicon substrate front, front photoresist goes out piezoresistance type acceleration and passes as mask lithography
The pressure drag region of sensor and the pressure drag region of piezoresistive pressure sensor, then in two pressure drag regions inject light boron, shape respectively
Pressure drag is spread into light boron, photoresist is removed；
C) front photoresist goes out dense boron conductor area as mask lithography, and makes dense boron ohm by lithography in light boron diffusion pressure drag region and connect
Tactile region, is then injected into dense boron, forms the dense boron wire in silicon substrate inside, and is internally formed dense boron Ohmic contact in light boron diffusion pressure drag
Area, removes photoresist, annealing；
D) first double-sided deposition layer of silicon dioxide, then one layer of silicon nitride of double-sided deposition, positive silicon dioxide layer and silicon nitride layer
Together as insulating passivation layer；
E) front photoresist goes out a point runner region as mask lithography, dry method RIE etch silicon nitride, silica to silicon substrate top surface,
Expose the silicon substrate of point runner region；
F) front deposits one layer of non-crystalline silicon, in point runner region non-crystalline silicon and silicon substrate top surface directly contact；
G) front photoresist goes out working region and metal pin regional graphics as mask lithography, and RIE etching non-crystalline silicons are to nitridation
Silicon layer, removes photoresist；
H) front photoresist goes out fairlead as mask lithography, and dry method RIE etch silicon nitride, silica to silicon substrate top surface are removed
Photoresist, forms fairlead；
I) front deposited metal conductor layer, front photoresist goes out plain conductor and pin figure as mask lithography, and corrosion is without light
The metal of photoresist overlay area, removes photoresist, and Alloying Treatment forms plain conductor and metal pin；
J) back side photoresist goes out to corrode silicon window as mask lithography, and RIE etch silicon nitrides, silica to silicon substrate bottom surface are removed
Photoresist, silicon nitride, silicon dioxide layer make mask wet etching silicon substrate and form piezoresistance type acceleration sensor, pressure drag type pressure biography
Sensor film；
K), to silicon substrate bottom surface, the back side carries out silicon-glass anodic bonding for the remaining silicon nitride of dry method RIE etched backside, silica；
L) front photoresist goes out cantilever beam release profiles as mask lithography, and DRIE cuts through silicon nitride, silica, silicon substrate and forms pressure
The cantilever beam structure of resistive acceleration transducer, removes photoresist；
M) front carries out amorphous silicon-glass anodic bonding；
N) scribing, realizes the encapsulation of one single chip, and scribing makes two bites at a cherry：First time scribing, removes metal pin top glass；
Structure in burst groove is scratched in second scribing, separates one single chip, completes encapsulation.
9. MEMS piezoresistive acceleration as claimed in claim 8, the manufacture method of pressure integrated sensor, it is characterised in that step
It is rapid k) in the back side carry out the technological parameter of silicon-glass anodic bonding and be：300～500V of voltage, 15～20mA of electric current, temperature 300
～400 DEG C, 2000～3000N of pressure, 5～10min of time.
10. MEMS piezoresistive acceleration as claimed in claim 8, the manufacture method of pressure integrated sensor, it is characterised in that
The technological parameter that front carries out amorphous silicon-glass anodic bonding in step m) is：450～1000V of voltage, 15～25mA of electric current,
300～400 DEG C of temperature, 2000～3000N of pressure, 15～25min of time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410264513.3A CN104062464B (en) | 2014-06-13 | 2014-06-13 | MEMS piezoresistive accelerated speed and pressure integration sensor and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410264513.3A CN104062464B (en) | 2014-06-13 | 2014-06-13 | MEMS piezoresistive accelerated speed and pressure integration sensor and manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104062464A CN104062464A (en) | 2014-09-24 |
| CN104062464B true CN104062464B (en) | 2017-04-12 |
Family
ID=51550269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410264513.3A Active CN104062464B (en) | 2014-06-13 | 2014-06-13 | MEMS piezoresistive accelerated speed and pressure integration sensor and manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104062464B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI513981B (en) * | 2014-11-13 | 2015-12-21 | Ind Tech Res Inst | Mems apparatus with multiple chambers and method for manufacturing the same |
| CN105731361A (en) * | 2014-12-10 | 2016-07-06 | 中芯国际集成电路制造(上海)有限公司 | MEMS device, preparation method of MEMS device and electronic device |
| CN105987722B (en) * | 2015-02-04 | 2019-05-28 | 中芯国际集成电路制造(上海)有限公司 | A kind of pressure sensor and preparation method thereof |
| CN104776951B (en) * | 2015-03-30 | 2017-06-20 | 中国电子科技集团公司第三十八研究所 | A kind of MEMS Piezoresistive Pressure Sensor and preparation method thereof |
| CN105174198A (en) * | 2015-08-12 | 2015-12-23 | 中国电子科技集团公司第三十八研究所 | Acceleration sensor of package structure and preparation method thereof |
| CN105241600B (en) * | 2015-08-17 | 2017-12-29 | 中国科学院地质与地球物理研究所 | A kind of MEMS pressure gauges chip and its manufacturing process |
| CN108627287A (en) * | 2018-06-06 | 2018-10-09 | 上海天沐自动化仪表有限公司 | Integrated piezoresistive silicon sensor chip |
| CN110577185B (en) * | 2019-08-06 | 2021-11-16 | 西人马联合测控（泉州）科技有限公司 | MEMS structure, manufacturing method of MEMS structure and tire pressure sensor |
| CN111762752A (en) * | 2020-05-25 | 2020-10-13 | 深迪半导体(上海)有限公司 | MEMS device and method of manufacturing the same |
| CN113607308B (en) * | 2021-06-21 | 2023-07-04 | 上海韦尔半导体股份有限公司 | Integrated sensor chip |
| CN115541071B (en) * | 2022-12-01 | 2023-06-16 | 无锡芯感智半导体有限公司 | Bipolar transistor MEMS pressure sensor and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1561724A1 (en) * | 2004-02-06 | 2005-08-10 | General Electric Company | Micromechanical device with thinned cantilever structure and related methods |
| CN101551403A (en) * | 2009-05-22 | 2009-10-07 | 中国科学院上海微系统与信息技术研究所 | Integrated silicon chip for testing acceleration, pressure and temperature, and manufacturing method thereof |
| CN102583232A (en) * | 2010-12-15 | 2012-07-18 | 通用电气公司 | Method for fabricating a sensor |
-
2014
- 2014-06-13 CN CN201410264513.3A patent/CN104062464B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1561724A1 (en) * | 2004-02-06 | 2005-08-10 | General Electric Company | Micromechanical device with thinned cantilever structure and related methods |
| CN101551403A (en) * | 2009-05-22 | 2009-10-07 | 中国科学院上海微系统与信息技术研究所 | Integrated silicon chip for testing acceleration, pressure and temperature, and manufacturing method thereof |
| CN102583232A (en) * | 2010-12-15 | 2012-07-18 | 通用电气公司 | Method for fabricating a sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104062464A (en) | 2014-09-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104062464B (en) | MEMS piezoresistive accelerated speed and pressure integration sensor and manufacturing method | |
| CN104062045B (en) | A kind of piezoresistive pressure sensor and its manufacture method | |
| CN104062059B (en) | A kind of MEMS piezoresistive pressure sensor and its manufacture method | |
| CN104062463B (en) | Piezoresistive acceleration sensor and manufacturing method thereof | |
| CN106124117B (en) | A kind of double cavity pressure meter chips and its manufacturing process | |
| CN105241369B (en) | A kind of MEMS strain gauges chip and its manufacturing process | |
| CN104089727B (en) | The high performance pressure sensor chip and manufacture method of integrated temperature | |
| CN104776951B (en) | A kind of MEMS Piezoresistive Pressure Sensor and preparation method thereof | |
| CN103185612B (en) | Single silicon-chip microflow sensor being suitable to surface mount package and preparation method thereof | |
| CN201653604U (en) | Pressure sensor | |
| CN105444931B (en) | SOI presser sensor chips based on sacrificial layer technology and its manufacturing method | |
| CN108254106B (en) | Preparation method of silicon-glass-silicon four-layer structure resonant MEMS pressure sensor | |
| CN101692099A (en) | Piezoresistive double-shaft micro-accelerometer with on-chip zero offset compensation and manufacturing method thereof | |
| CN102243126B (en) | Nano silicon thin film transistor pressure sensor | |
| CN104764547A (en) | Relief-type island film stress concentration structure micro-pressure sensor chip and preparing method | |
| CN104062462A (en) | MEMS piezoresistive accelerated speed sensor and manufacturing method thereof | |
| CN104089642B (en) | Piezoresistive acceleration and pressure integrated sensor and method for manufacturing piezoresistive acceleration and pressure integrated sensor | |
| CN107748025A (en) | Graphene/hexagonal boron nitride heterostructure pressure sensor and preparation method thereof | |
| CN105174198A (en) | Acceleration sensor of package structure and preparation method thereof | |
| CN107917750A (en) | A kind of MEMS hot types sound particle sensor | |
| CN107796955A (en) | Double-axel acceleration sensor chip and preparation method thereof in more beam type single mass faces | |
| CN105043603A (en) | Capacitive pressure sensor provided with self-detection apparatus, and preparation method thereof | |
| CN108254031B (en) | Differential pressure type gas micro-flow sensor and manufacturing method thereof | |
| CN105021328B (en) | The compatible piezoresistive pressure sensor and preparation method thereof of CMOS technology | |
| CN103196596B (en) | Nanometer film pressure sensor based on sacrificial layer technology and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CB03 | Change of inventor or designer information |
Inventor after: Long Zhijian Inventor after: He Ye Inventor after: Dong Jian Inventor after: Jiang Heng Inventor before: Dong Jian Inventor before: Jiang Heng Inventor before: Sun Li |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20170703 Address after: 210032 Jiangsu city of Nanjing province high tech Industrial Development Zone, Lai Sun Road 19 IntelliSense technology park Patentee after: Jiangsu Intellisense Technology Co., Ltd. Address before: 310014 Hangzhou city in the lower reaches of the city of Wang Chao Road, Zhejiang University of Technology,, Department of science and technology, 18 Patentee before: Zhejiang University of Technology |