CN105731361A - MEMS device, preparation method of MEMS device and electronic device - Google Patents

MEMS device, preparation method of MEMS device and electronic device Download PDF

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Publication number
CN105731361A
CN105731361A CN201410753576.5A CN201410753576A CN105731361A CN 105731361 A CN105731361 A CN 105731361A CN 201410753576 A CN201410753576 A CN 201410753576A CN 105731361 A CN105731361 A CN 105731361A
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China
Prior art keywords
mems
wafer
opening
mems wafer
size
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CN201410753576.5A
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Chinese (zh)
Inventor
郑超
李卫刚
刘炼
王伟
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Corp
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Semiconductor Manufacturing International Shanghai Corp
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Priority to CN201410753576.5A priority Critical patent/CN105731361A/en
Publication of CN105731361A publication Critical patent/CN105731361A/en
Pending legal-status Critical Current

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Abstract

The invention relates to an MEMS device, a preparation method of the MEMS device and an electronic device. The method comprises following steps of step S1, providing an MEMS wafer; and forming the MEMS device on the front face of the MEMS wafer; step S2, reversing the component obtained in the step S1; and grinding the MEMS wafer before or after the component is reversed, thus reducing the thickness of the MEMS wafer; step S3, patterning the backside of the MEMS wafer, thus forming a first opening for exposing the MEMS device; step S4, combining a second wafer on the backside of the MEMS wafer, wherein a second opening is arranged in the second wafer, the second opening is located above the first opening, and the size of the second opening is greater than that of the first opening, thus forming an MEMS backside hole. The devices and the method have the advantages that 1, the shape of the backside hole is improved; the cavity volume of the backside hole is controllable; and 2, the performance of the product is improved.

Description

A kind of MEMS and preparation method thereof, electronic installation
Technical field
The present invention relates to semiconductor applications, in particular it relates to a kind of MEMS and preparation method thereof, electronic installation.
Background technology
Development along with semiconductor technology, on the market of sensor (sensor) series products, smart mobile phone, integrated CMOS and MEMS (MEMS) device are increasingly becoming most main flow, state-of-the-art technology, and along with the renewal of technology, and direction little towards size, that performance is high and low in energy consumption is developed.
Wherein, MEMS sensor is widely used in automotive electronics: such as TPMS, engine oil pressure sensor, automobile brake system air pressure probe, air intake manifold of automotive engine pressure transducer (TMAP), common rail for diesel engine pressure transducer;Consumer electronics: such as tire gauge, sphygomanometer, cupboard scale, health scale, washing machine, dish-washing machine, electric refrigerator, microwave oven, baking box, vacuum cleaner pressure transducer, A/C pressure sensor, washing machine, water dispenser, dish-washing machine, solar water heater Liquid level pressure transducer;Industrial electronic: such as digital pressure gauge, digital stream scale, industry batching weighing etc., electronic audiovisual field: the equipment such as mike.
In MEMS field, the operation principle of capacitive MEMS device is to be produced the change of electric capacity by the motion of vibrating diaphragm (Membrane), capacitance change is utilized to carry out computing and work, currently in order to improve the performance of MEMS (such as uPhone), generally open dorsal pore (backsidehole) at the back side of MEMS and improve noise ratio, the volume of dorsal pore influences whether uPhone product performance at work, is mainly manifested in the parameter of noise ratio.
Accordingly, it would be desirable to the preparation method of current MEMS is improved, in order to improve signal to noise ratio and the sensitivity of described MEMS.
Summary of the invention
Introducing the concept of a series of reduced form in Summary, this will further describe in detailed description of the invention part.The Summary of the present invention is not meant to the key feature and the essential features that attempt to limit technical scheme required for protection, does not more mean that the protection domain attempting to determine technical scheme required for protection.
The present invention is in order to overcome the problem of presently, there are, it is provided that the preparation method of a kind of MEMS, including:
Step S1: MEMS wafer is provided, is formed with MEMS on the front of described MEMS wafer;
Step S2: the element obtained in the described step S1 that reverses, and before described reversion or grind described MEMS wafer afterwards, to reduce the thickness of described MEMS wafer;
Step S3: pattern the back side of described MEMS wafer, to form the first opening, exposes described MEMS;
Step S4: in conjunction with the second wafer on the back side of described MEMS wafer, wherein said second wafer is formed with the second opening, described second opening is positioned at the top of described first opening and the size being sized larger than described first opening of described second opening, to form MEMS dorsal pore.
Alternatively, in described step S2, grind described MEMS wafer to 180-220um.
Alternatively, in described step S3, described first opening is of a size of 70-90um.
Alternatively, in described step S4, described second opening is of a size of 150-170um.
Alternatively, in described step S4, by be bonded method on the back side of described MEMS wafer in conjunction with described second wafer.
Alternatively, described method still further comprises step S5: obtain element in the described step S4 that reverses.
Alternatively, described MEMS wafer selects silicon;
Described second wafer selects silicon.
Alternatively, in described step S4, in conjunction with described second wafer on the back side of described MEMS wafer, to form the described MEMS dorsal pore of reversed convex type.
Present invention also offers a kind of MEMS prepared according to said method.
Present invention also offers a kind of electronic installation, including above-mentioned MEMS.
The present invention is to solve problems of the prior art, the preparation method providing a kind of semiconductor device, first thin described MEMS wafer in the process and pattern the back side of described MEMS wafer to form the first opening, then on the back side of described MEMS wafer, combine second wafer with the second opening, to form reversed convex type dorsal pore, by the change to MEMS product technological process, improve the performance of MEMS (such as uPhone device).
It is an advantage of the current invention that:
1, the pattern of dorsal pore is improved.The cavity volume making dorsal pore is controlled.
2, improve the performance of product.
Accompanying drawing explanation
The drawings below of the present invention is used for understanding the present invention in this as the part of the present invention.Shown in the drawings of embodiments of the invention and description thereof, it is used for explaining assembly of the invention and principle.In the accompanying drawings,
The preparation process schematic diagram of MEMS in Fig. 1 a-1e embodiment of the invention;
The preparation process schematic diagram of MEMS in Fig. 2 a-2d embodiment of the invention;
Fig. 3 is the preparation technology flow chart of MEMS in the embodiment of the invention.
Detailed description of the invention
In the following description, a large amount of concrete details is given to provide more thorough understanding of the invention.It is, however, obvious to a person skilled in the art that the present invention can be carried out without these details one or more.In other example, in order to avoid obscuring with the present invention, technical characteristics more well known in the art are not described.
It should be appreciated that the present invention can implement in different forms, and should not be construed as being limited to embodiments presented herein.On the contrary, provide these embodiments will make openly thoroughly with complete, and will fully convey the scope of the invention to those skilled in the art.In the accompanying drawings, in order to clear, the size in Ceng He district and relative size are likely to be exaggerated.Same reference numerals represents identical element from start to finish.
It is understood that, when element or layer be referred to as " ... on ", " with ... adjacent ", " being connected to " or " being coupled to " other element or during layer, its can directly on other element or layer, adjacent thereto, be connected or coupled to other element or layer, or can there is element between two parties or layer.On the contrary, when element be referred to as " directly exist ... on ", " with ... direct neighbor ", " being directly connected to " or " being directly coupled to " other element or during layer, then be absent from element between two parties or layer.Although it should be understood that and term first, second, third, etc. can being used to describe various element, parts, district, floor and/or part, these elements, parts, district, floor and/or part should not be limited by these terms.These terms are used merely to distinguish an element, parts, district, floor or part and another element, parts, district, floor or part.Therefore, without departing under present invention teach that, the first element discussed below, parts, district, floor or part are represented by the second element, parts, district, floor or part.
Spatial relationship term such as " ... under ", " ... below ", " following ", " ... under ", " ... on ", " above " etc., here can be used thus the relation of shown in description figure a element or feature and other element or feature for convenient description.It should be understood that except the orientation shown in figure, spatial relationship term is intended to also include the different orientation of the device in using and operating.Such as, if the device upset in accompanying drawing, then, be described as " below other element " or " under it " or " under it " element or feature will be oriented to other element or feature " on ".Therefore, exemplary term " ... below " and " ... under " upper and lower two orientations can be included.Device can additionally orientation (90-degree rotation or other orientation) and as used herein spatial description language correspondingly explained.
As used herein term only for purpose of describing specific embodiment and the restriction not as the present invention.When using at this, " one ", " one " and " described/to be somebody's turn to do " of singulative is also intended to include plural form, unless context is expressly noted that other mode.It is also to be understood that term " composition " and/or " including ", when using in this specification, determine the existence of described feature, integer, step, operation, element and/or parts, but be not excluded for one or more other feature, integer, step, operation, element, the existence of parts and/or group or interpolation.When using at this, term "and/or" includes any of relevant Listed Items and all combinations.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, in order to explaination technical scheme.Presently preferred embodiments of the present invention is described in detail as follows, but except these detailed descriptions, the present invention can also have other embodiments.
The preparation method of current MEMS is such as shown in Fig. 1 a-1e, below in conjunction with accompanying drawing, described method is further described, first Semiconductor substrate 101 is provided, described Semiconductor substrate 101 is formed MEMS 102, then reverse described Semiconductor substrate, obtain pattern as shown in Figure 1a.
Then, first time patterns the back side of described Semiconductor substrate, and to form groove, as shown in Figure 1 b, wherein said groove is positioned at the top of described MEMS 102, and the degree of depth of wherein said groove is about 200um.
Then deposition photoresist layer 103 is as protective layer; wherein owing to the shoulder height (StepHigh) of described groove and both sides step reaches 200um; so described step drift angle and/or turning (Corner) place cannot be protected by the photoresist of spraying (SprayCoating), as illustrated in figure 1 c.
Then second time patterning step is carried out; pattern the back side of described Semiconductor substrate; to form opening; such as form dorsal pore; and expose described MEMS, but owing to described step drift angle and/or turning (Corner) could not well protect, make the shape of described dorsal pore and volume not ideal enough; as shown in Figure 1 d, the performance of MEMS is had influence on.Finally reverse described element, obtains pattern as shown in fig. le.
It is thus desirable to the preparation method of current MEMS is improved, in order to eliminate the problems referred to above.
Embodiment 1
The preparation method that present invention also offers a kind of described MEMS, is described further described method below in conjunction with Fig. 2 a-2d, and described 2a-2d is the preparation process schematic diagram of MEMS in this embodiment.
First, perform step 201, it is provided that MEMS wafer 201, the front of described MEMS wafer 201 is formed with MEMS 202.
Specifically, as shown in Figure 2 a, in this step, described MEMS wafer 201 can be at least one in the following material being previously mentioned: stacking SiGe (S-SiGeOI), germanium on insulator SiClx (SiGeOI) and germanium on insulator (GeOI) etc. on stacking silicon (SSOI), insulator on silicon, silicon-on-insulator (SOI), insulator.
Form MEMS 202 in the front of described MEMS wafer 201, wherein said MEMS 202 can select according to the kind of MEMS, for instance can be vibrating diaphragm, backboard, electrode etc., it is not limited to a certain.
Perform step 202, grind described MEMS wafer 201, to reduce the thickness of described MEMS wafer 201.
Specifically, described MEMS wafer 201 to 180-220um is ground.
Alternatively, described MEMS wafer 201 to 200um is ground.
It is alternatively possible to select backgrind or other lapping modes commonly used in the art, it is not limited to a certain.
Performing step 203, reversion has the element of described MEMS, obtains pattern as shown in Figure 2 a.
Wherein said step 202 and described step 203 can be exchanged, namely can before described reversion or described MEMS wafer 201 can also be ground after the reversal, to reduce the thickness of described MEMS wafer 201.
Perform step 204, pattern the back side of described MEMS wafer 201, to form the first opening 20, expose described MEMS 202.
Specifically, as shown in Figure 2 b, the mask layer of patterning is formed at the back side of described MEMS wafer, described mask layer has the pattern of the first opening 20, then the back side with described mask layer for MEMS wafer described in mask etch 201, to form the first opening 20, exposes described MEMS 202.
Select O in one embodiment of this invention2Atmosphere etch described MEMS wafer, it is also possible to be simultaneously introduced other a small amount of gas such as CF4、CO2、N2, described etching pressure can be 50-200mTorr, it is preferred to 100-150mTorr, and power is 200-600W, and described etching period is 5-80s in the present invention, selects bigger gas flow in the present invention, at O of the present invention simultaneously2Flow be 30-300sccm.
Alternatively, described first opening is of a size of 70-90um.
Further, described first opening is of a size of about 80um.
Perform step 205, in conjunction with the second wafer 203 on the back side of described MEMS wafer 201, wherein said second wafer is formed the second opening 21, described second opening 21 is positioned at the top of described first opening 20, and the size being sized larger than described first opening 20 of described second opening 21, to form MEMS dorsal pore.
Specifically, as shown in Figure 2 c, by be bonded method on the back side of MEMS wafer 201 in conjunction with the second wafer.
Alternatively, described second opening is of a size of 150-170um.
Alternatively, described second opening is of a size of 160um.
Wherein, described MEMS wafer 201 selects silicon;Described second wafer 203 and MEMS wafer 201 select identical material, for instance select silicon.
Wherein, the forming method of described second wafer can include but according to not being confined to: provides the second wafer, then patterns described second wafer, to form the second opening in described second wafer, described second opening be sized larger than described first opening size.
Then second wafer and described MEMS wafer with the second opening are combined as a whole, obtain pattern as shown in Figure 2 d.
Specifically, described MEMS the second wafer is formed the mask layer of patterning, described mask layer has the pattern of the second opening 21, then with described mask layer for the back side of the second wafer described in mask etch, to form the second opening 21.
Preferably C-F etchant etches in the present invention, and described C-F etchant is CF4、CHF3、C4F8And C5F8In one or more.In this embodiment, described dry etching can select CF4、CHF3, additionally plus N2、CO2In one as etching atmosphere, wherein gas flow is CF410-200sccm, CHF310-200sccm, N2Or CO2Or O210-400sccm, described etching pressure is 30-150mTorr, and etching period is 5-120s.
Further, described second opening 21 is positioned at the top of described first opening 20 and the size being sized larger than described first opening 20 of described second opening 21, to form " convex " shape MEMS dorsal pore.
Perform step 206, inversion step 205 obtains element.
So far, the introduction of correlation step prepared by the MEMS of the embodiment of the present invention is completed.After the above step, it is also possible to include other correlation step, repeat no more herein.Further, in addition to the foregoing steps, the preparation method of the present embodiment can also include other steps among each step above-mentioned or between different steps, and these steps all can be realized by various techniques of the prior art, repeats no more herein.
The present invention is to solve problems of the prior art, the preparation method providing a kind of semiconductor device, first thin described MEMS wafer in the process and pattern the back side of described MEMS wafer to form the first opening, then on the back side of described MEMS wafer, combine second wafer with the second opening, to form reversed convex type dorsal pore, by the change to MEMS product technological process, improve the performance of MEMS (such as uPhone device).
It is an advantage of the current invention that:
1, the pattern of dorsal pore is improved.The cavity volume making dorsal pore is controlled.
2, improve the performance of product.
Fig. 3 is the preparation technology flow chart of MEMS described in the embodiment of the invention, specifically includes following steps:
Step S1: MEMS wafer is provided, is formed with MEMS on the front of described MEMS wafer;
Step S2: the element obtained in the described step S1 that reverses, and before described reversion or grind described MEMS wafer afterwards, to reduce the thickness of described MEMS wafer;
Step S3: pattern the back side of described MEMS wafer, to form the first opening, exposes described MEMS;
Step S4: in conjunction with the second wafer on the back side of described MEMS wafer, wherein said second wafer is formed with the second opening, described second opening is positioned at the top of described first opening and the size being sized larger than described first opening of described second opening, to form MEMS dorsal pore.
Embodiment 2
Present invention also offers a kind of semiconductor device, described semiconductor device (MEMS) selects the method described in embodiment 1 to prepare.The semiconductor device prepared by method described in the embodiment of the present invention 1 improves the pattern of dorsal pore.The cavity volume making dorsal pore is controlled, by the change to MEMS product technological process, improves the performance of MEMS (such as uPhone device).
Embodiment 3
Present invention also offers a kind of electronic installation, including the MEMS described in embodiment 2.Wherein, semiconductor device is the MEMS described in embodiment 2, or the MEMS that the preparation method according to embodiment 1 obtains.
The electronic installation of the present embodiment, can be mobile phone, panel computer, notebook computer, net book, game machine, television set, VCD, DVD, navigator, photographing unit, video camera, recording pen, any electronic product such as MP3, MP4, PSP or equipment, it is possible to for any intermediate products including described MEMS.The electronic installation of the embodiment of the present invention, owing to employing above-mentioned MEMS, thus has better performance.
The present invention is illustrated already by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to citing and descriptive purpose, and is not intended to limit the invention in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that and the invention is not limited in above-described embodiment, more kinds of variants and modifications can also be made according to the teachings of the present invention, within these variants and modifications all fall within present invention scope required for protection.Protection scope of the present invention is defined by the appended claims and equivalent scope thereof.

Claims (10)

1. a preparation method for MEMS, including:
Step S1: MEMS wafer is provided, is formed with MEMS on the front of described MEMS wafer;
Step S2: the element obtained in the described step S1 that reverses, and before described reversion or grind described MEMS wafer afterwards, to reduce the thickness of described MEMS wafer;
Step S3: pattern the back side of described MEMS wafer, to form the first opening, exposes described MEMS;
Step S4: in conjunction with the second wafer on the back side of described MEMS wafer, wherein said second wafer is formed with the second opening, described second opening is positioned at the top of described first opening and the size being sized larger than described first opening of described second opening, to form MEMS dorsal pore.
2. method according to claim 1, it is characterised in that in described step S2, grinds described MEMS wafer to 180-220um.
3. method according to claim 1, it is characterised in that in described step S3, described first opening is of a size of 70-90um.
4. method according to claim 1, it is characterised in that in described step S4, described second opening is of a size of 150-170um.
5. method according to claim 1, it is characterised in that in described step S4, by be bonded method on the back side of described MEMS wafer in conjunction with described second wafer.
6. method according to claim 1, it is characterised in that described method still further comprises step S5: obtain element in the described step S4 that reverses.
7. method according to claim 1, it is characterised in that described MEMS wafer selects silicon;
Described second wafer selects silicon.
8. method according to claim 1, it is characterised in that in described step S4, in conjunction with described second wafer on the back side of described MEMS wafer, to form the described MEMS dorsal pore of reversed convex type.
9. the MEMS prepared according to the described method of one of claim 1 to 8.
10. an electronic installation, including the MEMS described in claim 9.
CN201410753576.5A 2014-12-10 2014-12-10 MEMS device, preparation method of MEMS device and electronic device Pending CN105731361A (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201226593Y (en) * 2008-06-23 2009-04-22 东莞泉声电子有限公司 Silicon microphone capable of being welding on two sides
JP2010268412A (en) * 2009-05-18 2010-11-25 Panasonic Corp Mems microphone semiconductor device and method of manufacturing the same
CN101900625A (en) * 2008-11-19 2010-12-01 霍尼韦尔国际公司 Design of wet/wet differential pressure sensor based on microelectronic packaging process
CN102413408A (en) * 2011-11-11 2012-04-11 美律电子(深圳)有限公司 Micro electromechanical microphone chip capable of increasing back cavity space and manufacturing technology thereof
US20130214370A1 (en) * 2010-05-03 2013-08-22 S3C, Inc. System and method for minimizing deflection of a membrance of an absolute pressure sensor
CN104062464A (en) * 2014-06-13 2014-09-24 浙江工业大学 MEMS piezoresistive accelerated speed and pressure integration sensor and manufacturing method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201226593Y (en) * 2008-06-23 2009-04-22 东莞泉声电子有限公司 Silicon microphone capable of being welding on two sides
CN101900625A (en) * 2008-11-19 2010-12-01 霍尼韦尔国际公司 Design of wet/wet differential pressure sensor based on microelectronic packaging process
JP2010268412A (en) * 2009-05-18 2010-11-25 Panasonic Corp Mems microphone semiconductor device and method of manufacturing the same
US20130214370A1 (en) * 2010-05-03 2013-08-22 S3C, Inc. System and method for minimizing deflection of a membrance of an absolute pressure sensor
CN102413408A (en) * 2011-11-11 2012-04-11 美律电子(深圳)有限公司 Micro electromechanical microphone chip capable of increasing back cavity space and manufacturing technology thereof
CN104062464A (en) * 2014-06-13 2014-09-24 浙江工业大学 MEMS piezoresistive accelerated speed and pressure integration sensor and manufacturing method

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Application publication date: 20160706