CN105174198A - Acceleration sensor of package structure and preparation method thereof - Google Patents

Acceleration sensor of package structure and preparation method thereof Download PDF

Info

Publication number
CN105174198A
CN105174198A CN201510493467.9A CN201510493467A CN105174198A CN 105174198 A CN105174198 A CN 105174198A CN 201510493467 A CN201510493467 A CN 201510493467A CN 105174198 A CN105174198 A CN 105174198A
Authority
CN
China
Prior art keywords
silicon chip
described
glass
bonding
silicon
Prior art date
Application number
CN201510493467.9A
Other languages
Chinese (zh)
Inventor
曾鸿江
胡国俊
刘莹
盛文军
Original Assignee
中国电子科技集团公司第三十八研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 中国电子科技集团公司第三十八研究所 filed Critical 中国电子科技集团公司第三十八研究所
Priority to CN201510493467.9A priority Critical patent/CN105174198A/en
Publication of CN105174198A publication Critical patent/CN105174198A/en

Links

Abstract

The invention discloses an acceleration sensor of a package structure and a preparation method thereof. Bottom layer glass, a silicon slice and top layer glass are orderly bonded to form a layered airtight structure; a middle layer is arranged between the silicon slice and the top layer glass; the silicon slice is provided with a micro cantilever and a mass block through back cavity corrosion; one end of the micro cantilever is fixed on the silicon slice and the other end thereof is impending; the mass block is arranged at an impending end of the micro cantilever; the micro cantilever and/or the mass block is provided with four piezoresistors through a light boron doping process; passivation layers are covered on the piezoresistors; metal interconnects and electrode bonding pads are arranged on the passivation layers; the piezoresistors, the metal interconnects and the electrode bonding pads are in ohmic contact through a heavy boron area. The invention adopts a method of bonding twice to realize a three-layer package structure of glass-silicon-glass, forms a vacuum cavity of excellent airtight performance, and provides a more reliable work environment to the micro cantilever and the mass block in the acceleration sensor.

Description

Acceleration transducer of a kind of encapsulating structure and preparation method thereof

Technical field

The present invention relates to the acceleration transducer that a kind of MEMS micro fabrication makes, in particular a kind of acceleration transducer and preparation method thereof of encapsulating structure.

Background technology

Acceleration transducer widely uses with automobile electronics, comprises in automobile air-bag system, automobile tire pressure monitoring system, velocity-measuring system, burglary-resisting system and all there is acceleration transducer.Due to the test environment in automotive electronics and conventional environment different, such as, in automobile tire pressure monitoring system, sensor chip generally needs to implant inside tires, in galloping process, to produce the environment of high temperature, high pressure in tire, therefore in automotive electronics, application requires that sensor has higher stability, insensitive to test environment change; In addition, because Automobile Electronic Industry relates to personal safety, the reliability of sensor is had higher requirement.

Acceleration transducer another be mainly used in consumer electronics product, comprise in the emerging high-tech products such as smart mobile phone, wearable MEMS device (Intelligent bracelet, intelligent glasses, pedometer), Smart Home (intelligent game terminal).In consumer electronics product, the size of sensor chip, cost compare are paid close attention to.

Structure and the preparation method of acceleration chip have: Chinese invention patent: 02151296.5, single chip integrated straight pull and vertical compression micro girder construction piezoresistive acceleration sensor and preparation method, by the position of careful design two micro-beams, become the micro-beam of straight pull and vertical compression, and be distributed with two piezo-resistances formation Hui Sitong half-bridges at Wei Liangshang, another two resistance of Wheatstone bridge are provided by external circuit, need the position of careful design two micro-beams, high to requirement on machining accuracy, simultaneously owing to only having two piezo-resistances, its resistance is obvious with temperature drift, therefore, sensor accuracy class is influenced by environmental temperature.Chinese invention patent 200910051766.1, the temperature difference adopting thermoelectric pile to detect in the sealed cavity that caused by acceleration carrys out sense acceleration.Polysilicon resistance is adopted to make heater, the power consumption of sensor is increased, in addition, in some test environment, the rising of environment temperature is comparatively large to the temperature differences effect in annular seal space, such as, in Tire Pressure Monitor System, tire high-speed motion will cause internal temperature to raise, and affect the measuring accuracy of sensor.

Summary of the invention

The object of the invention is to overcome the deficiencies in the prior art, provide acceleration transducer of a kind of encapsulating structure and preparation method thereof, obtained highly sensitive sensor.

The present invention is achieved by the following technical solutions, the present invention includes bottom glass, silicon chip, top layer glass, intermediate layer, passivation layer and metal interconnecting wires and electrode pad;

Described bottom glass, silicon chip and top layer glass successively bonding form stratiform airtight construction, and the inside of layered airtight construction forms vacuum chamber, and described intermediate layer is arranged between silicon chip and top layer glass;

Described silicon chip arranges micro-cantilever and mass by the corrosion of back of the body chamber, and one end of described micro-cantilever is fixed on silicon chip, and the other end is unsettled, and described mass is arranged at the free end of micro-cantilever; Described micro-cantilever and/or mass are provided with four piezo-resistances by light boron doping process, and described piezo-resistance forms Hui Sitong full bridge structure;

Described passivation layer covers on piezo-resistance, and metal interconnecting wires and electrode pad are arranged on passivation layer, and described silicon chip forms territory, concentrated boron area by heavy doping, realizes Ohmic contact between piezo-resistance and metal interconnecting wires and electrode pad by territory, concentrated boron area.

As one of preferred embodiment of the present invention, described top layer glass is groove structure, and described slot opening downwards and wafer bonding.

A preparation method for the acceleration transducer of encapsulating structure, comprises the following steps:

(1) twin polishing is carried out to silicon chip;

(2) in silicon chip back side deposit passivation layer, carry out the doping of light boron at front side of silicon wafer and form piezo-resistance, then carry out dense boron doping at front side of silicon wafer, form territory, concentrated boron area;

(3) at silicon chip double-sided deposition passivation layer, and carry out graphically, carving ohmic contact hole and scribe line area to front passivation layer;

(4) at front side of silicon wafer depositing metal layers, and graphically, as metal interconnecting wires and electrode pad, then at front side of silicon wafer depositing inter-layer, and graphically, as with top layer bond glass layer;

(5) to silicon chip back side inside and outside passivation layers carry out graphically, and with near the passivation layer of silicon chip as a mask, anisotropic etch is carried out to silicon chip, obtains mass;

(6) using outer passivation layer as mask, the graphical passivation layer near silicon chip; And by passivation layers jointly as secondary mask, continue to carry out anisotropic etch to silicon chip, obtain the micro-cantilever of appointed thickness;

(7) etching removes the unnecessary passivation layers of silicon chip back side, silicon chip and bottom bond glass;

(8) by etching the insulating barrier in front side of silicon wafer release areas and restite silicon, the release to micro-cantilever is realized;

(9) silicon chip and top layer glass are by Intermediate Layer Bonding, and after bonding, scribing can obtain acceleration transducer.

As one of preferred embodiment of the present invention, any one being graphically selected from photoetching process, focused-ion-beam lithography, laser scanning etching technics described.

As one of preferred embodiment of the present invention, described doping process is selected from any one in ion implantation doping, painting source diffusing, doping.

In described step (2), (3), (4), the depositing operation of intermediate layer and passivation layer is selected from any one in oxidation, low-pressure chemical vapor deposition, plasma reinforced chemical vapour deposition, sol gel process, organic material coating curing process; The passivation material deposited is selected from any one in silica, silicon nitride, macromolecular material; The intermediate layer material deposited is selected from any one in indefinite form silicon, polysilicon, metallic film, organic film, glass paste.

In described step (4), the depositing operation of metal level is selected from any one in sputtering sedimentation, electron-beam evaporation, heating evaporation deposition, electroplating deposition, electroless deposition, chemical reaction deposit; Metal layer material is selected from any one in Al, Au, Cu, Ni, Ag, Pt or alloy film.

Described etching technics is selected from any one in dry ionic etching, XeF gas attack, wet etching, focused-ion-beam lithography, laser ablation; Described anisotropic etch is selected from any one in potassium hydroxide solution burn into tetramethyl Dilute Ammonia Solution burn into ethene ethylene diamine pyrocatechol solution corrosion, anisotropic dry corrosion.

Described bonding technology is selected from any one in anode linkage, painting source bonding, heat fusing bonding, glass paste bonding, local laser bonding, organic gel bonding, inter-metallic bond.

The present invention has the following advantages compared to existing technology: the present invention adopts twice bonding method to realize glass-silicon-glass three layers of encapsulating structure, form the vacuum cavity of air-tightness excellence, for micro-cantilever in acceleration transducer and mass provide more reliable working environment, improve the Stability and dependability of sensor chip, reduce the impact of environmental factor on sensor performance; Adopt four piezo-resistances to form Hui Sitong full-bridge, while improving transducer sensitivity, the temperature drift of piezo-resistance can be compensated, reduce the sensitivity to environment temperature; Adopt the method for secondary mask to the chamber corrosion of the silicon chip back of the body, directly form mass and the micro cantilever structure of acceleration transducer, processing technology is simple, and cost is lower.

Accompanying drawing explanation

Fig. 1 is sectional view of the present invention;

Fig. 2 is front view of the present invention;

Fig. 3 is the equivalent circuit diagram of Hui Sitong full-bridge circuit;

Fig. 4 is preparation flow figure of the present invention.

Detailed description of the invention

Elaborate to embodiments of the invention below, the present embodiment is implemented under premised on technical solution of the present invention, give detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.

As shown in Figure 4, the present embodiment preparation process is as follows:

(1) twin polishing is carried out to silicon chip;

(2) in silicon chip back side deposit passivation layer, passivation layer thickness scope is 1nm to 100 μm, carries out the doping of light boron and forms piezo-resistance, then carry out dense boron doping at front side of silicon wafer at front side of silicon wafer, form territory, concentrated boron area, for ohmic contact hole and mistake bond area interconnection line;

(3) at silicon chip double-sided deposition passivation layer, passivation layer thickness scope is 1nm to 100 μm, and carries out graphically, carving ohmic contact hole and scribe line area to front passivation layer;

(4) at front side of silicon wafer depositing metal layers, metallic layer thickness ranges is 1nm to 100 μm, and graphically, as metal interconnecting wires and electrode pad, then at front side of silicon wafer depositing inter-layer, intermediate layer thickness scope is 1nm to 100 μm, and graphical, as with top layer bond glass layer;

(5) to silicon chip back side inside and outside passivation layers carry out graphically, and with near the passivation layer of silicon chip as a mask, anisotropic etch is carried out to silicon chip, obtains mass;

(6) using outer passivation layer as mask, the graphical passivation layer near silicon chip; And by passivation layers jointly as secondary mask, continue to carry out anisotropic etch to silicon chip, obtain the micro-cantilever of appointed thickness;

(7) etching removes the unnecessary passivation layers of silicon chip back side, silicon chip and bottom bond glass;

(8) by etching the insulating barrier in front side of silicon wafer release areas and restite silicon, the release to micro-cantilever is realized;

(9) silicon chip and top layer glass are by Intermediate Layer Bonding, and after bonding, scribing can obtain acceleration transducer.

The patterning process of the present embodiment is photoetching process, and doping process is ion implantation doping;

In step (2), (3), (4), the depositing operation of intermediate layer and passivation layer is low-pressure chemical vapor deposition, in other embodiments, any one in plasma reinforced chemical vapour deposition, sol gel process, organic material coating curing process can be selected; The passivation material of deposition is silica, also can select material conventional in the MEMS technology such as silicon nitride, macromolecular material in other embodiments; Deposition intermediate layer material be indefinite form silicon, in other embodiments be polysilicon, metallic film, organic film, glass paste etc. can with the material of glass generation bonding.

In step (4), the depositing operation of metal level is sputtering sedimentation, in other embodiments, also can be the various deposit metal films technology such as electron-beam evaporation, heating evaporation deposition, electroplating deposition, electroless deposition, chemical reaction deposit, metal layer material is Al, can be the various metal material with conductive characteristic such as Au, Cu, Ni, Ag, Pt or alloy film in other embodiments.

Etching technics is dry ionic etching, can be various etching, the corrosion technologies such as XeF gas attack, wet etching, focused-ion-beam lithography, laser ablation in other embodiments; Anisotropic etch is potassium hydroxide solution corrosion, can select the various silicon materials corrosion technologies such as tetramethyl Dilute Ammonia Solution burn into ethene ethylene diamine pyrocatechol solution corrosion, anisotropic dry corrosion in other embodiments.

Bonding technology is anode linkage, can select the bonding techniques such as painting source bonding, heat fusing bonding, glass paste bonding, local laser bonding, organic gel bonding, inter-metallic bond in other embodiments.

As depicted in figs. 1 and 2, the acceleration transducer that the present embodiment is obtained comprises bottom glass 1, silicon chip 2, top layer glass 4, intermediate layer 3, passivation layer 9 and metal interconnecting wires and electrode pad 8;

Bottom glass 1, silicon chip 2 and top layer glass 4 successively bonding form stratiform airtight construction, the inside of layered airtight construction forms vacuum chamber 5, described intermediate layer 3 is arranged between silicon chip 2 and top layer glass 4, and top layer glass 4 is groove structure, and described slot opening downwards and silicon chip 2 bonding;

Silicon chip 2 arranges micro-cantilever 7 and mass 6 by the corrosion of back of the body chamber, and one end of described micro-cantilever 7 is fixed on silicon chip 2, and the other end is unsettled, and described mass 6 is arranged at the free end of micro-cantilever 7; Described micro-cantilever 7 and/or mass 6 are provided with four piezo-resistances 11 by light boron doping process, and described piezo-resistance 11 forms Hui Sitong full bridge structure; Four piezo-resistances 11 can all be distributed on micro-cantilever 7, also can partly be distributed on cantilever beam, and part is distributed on mass 6; Or be all distributed on mass 6.

Passivation layer 9 covers on piezo-resistance 11, metal interconnecting wires and electrode pad 8 are arranged on passivation layer 9, described silicon chip 2 forms territory, concentrated boron area 10 by heavy doping, between piezo-resistance 11 and metal interconnecting wires and electrode pad 8, realizes Ohmic contact by territory, concentrated boron area 10.Because air-tightness bonding is completely isolated with outside electrode pad by the metal interconnecting wires of inside, territory, concentrated boron area 10 is also as the wire passing through bond area.

As shown in Figure 3, in sensor internal Hui Sitong full-bridge equivalent circuit diagram, corresponding pin is respectively: output signal positive pole 1 pin, power supply input negative pole 2 pin, output signal negative pole 3 pin, power supply input positive pole 4 pin.When there is acceleration in sensor, micro-cantilever 7 bends under the effect of mass 6, stress is produced at piezo-resistance 11 place, according to piezoresistive effect, the resistance of piezo-resistance 11 will change, and will occur voltage difference, therefore between output signal positive pole 1 pin and output signal negative pole 3 pin, according to the voltage difference measured between output signal negative pole 3 pin and output signal positive pole 1 pin, thus the measurement to acceleration can be realized.Form full-bridge by four piezo-resistances 11, the sensitivity of sensor can be improved, the temperature drift of piezo-resistance 11 can be compensated simultaneously, reduce the impact by variation of ambient temperature.

The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.

Claims (9)

1. an acceleration transducer for encapsulating structure, is characterized in that, comprises bottom glass, silicon chip, top layer glass, intermediate layer, passivation layer and metal interconnecting wires and electrode pad;
Described bottom glass, silicon chip and top layer glass successively bonding form stratiform airtight construction, and the inside of layered airtight construction forms vacuum chamber, and described intermediate layer is arranged between silicon chip and top layer glass;
Described silicon chip arranges micro-cantilever and mass by the corrosion of back of the body chamber, and one end of described micro-cantilever is fixed on silicon chip, and the other end is unsettled, and described mass is arranged at the free end of micro-cantilever; Described micro-cantilever and/or mass are provided with four piezo-resistances by light boron doping process, and described piezo-resistance forms Hui Sitong full bridge structure;
Described passivation layer covers on piezo-resistance, and metal interconnecting wires and electrode pad are arranged on passivation layer, and described silicon chip forms territory, concentrated boron area by heavy doping, realizes Ohmic contact between piezo-resistance and metal interconnecting wires and electrode pad by territory, concentrated boron area.
2. the acceleration transducer of a kind of encapsulating structure according to claim 1, is characterized in that, described top layer glass is groove structure, and described slot opening downwards and wafer bonding.
3. a preparation method for the acceleration transducer of encapsulating structure as defined in claim 1, is characterized in that, comprise the following steps:
(1) twin polishing is carried out to silicon chip;
(2) in silicon chip back side deposit passivation layer, carry out the doping of light boron at front side of silicon wafer and form piezo-resistance, then carry out dense boron doping at front side of silicon wafer, form territory, concentrated boron area;
(3) at silicon chip double-sided deposition passivation layer, and carry out graphically, carving ohmic contact hole and scribe line area to front passivation layer;
(4) at front side of silicon wafer depositing metal layers, and graphically, as metal interconnecting wires and electrode pad, then at front side of silicon wafer depositing inter-layer, and graphically, as with top layer bond glass layer;
(5) to silicon chip back side inside and outside passivation layers carry out graphically, and with near the passivation layer of silicon chip as a mask, anisotropic etch is carried out to silicon chip, obtains mass;
(6) using outer passivation layer as mask, the graphical passivation layer near silicon chip; And by passivation layers jointly as secondary mask, continue to carry out anisotropic etch to silicon chip, obtain the micro-cantilever of appointed thickness;
(7) etching removes the unnecessary passivation layers of silicon chip back side, silicon chip and bottom bond glass;
(8) by etching the insulating barrier in front side of silicon wafer release areas and restite silicon, the release to micro-cantilever is realized;
(9) silicon chip and top layer glass are by Intermediate Layer Bonding, and after bonding, scribing can obtain acceleration transducer.
4. the preparation method of the acceleration transducer of a kind of encapsulating structure according to claim 3, is characterized in that, any one being graphically selected from photoetching process, focused-ion-beam lithography, laser scanning etching technics described.
5. the preparation method of the acceleration transducer of a kind of encapsulating structure according to claim 3, is characterized in that, described doping process is selected from any one in ion implantation doping, painting source diffusing, doping.
6. the preparation method of the acceleration transducer of a kind of encapsulating structure according to claim 3, it is characterized in that, in described step (2), (3), (4), the depositing operation of intermediate layer and passivation layer is selected from any one in oxidation, low-pressure chemical vapor deposition, plasma reinforced chemical vapour deposition, sol gel process, organic material coating curing process; The passivation material deposited is selected from any one in silica, silicon nitride, macromolecular material; The intermediate layer material deposited is selected from any one in indefinite form silicon, polysilicon, metallic film, organic film, glass paste.
7. the preparation method of the acceleration transducer of a kind of encapsulating structure according to claim 3, it is characterized in that, in described step (4), the depositing operation of metal level is selected from any one in sputtering sedimentation, electron-beam evaporation, heating evaporation deposition, electroplating deposition, electroless deposition, chemical reaction deposit; Metal layer material is selected from any one in Al, Au, Cu, Ni, Ag, Pt or alloy film.
8. the preparation method of the acceleration transducer of a kind of encapsulating structure according to claim 3, is characterized in that, described etching technics is selected from any one in dry ionic etching, XeF gas attack, wet etching, focused-ion-beam lithography, laser ablation; Described anisotropic etch is selected from any one in potassium hydroxide solution burn into tetramethyl Dilute Ammonia Solution burn into ethene ethylene diamine pyrocatechol solution corrosion, anisotropic dry corrosion.
9. the preparation method of the acceleration transducer of a kind of encapsulating structure according to claim 3, it is characterized in that, described bonding technology is selected from any one in anode linkage, painting source bonding, heat fusing bonding, glass paste bonding, local laser bonding, organic gel bonding, inter-metallic bond.
CN201510493467.9A 2015-08-12 2015-08-12 Acceleration sensor of package structure and preparation method thereof CN105174198A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510493467.9A CN105174198A (en) 2015-08-12 2015-08-12 Acceleration sensor of package structure and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510493467.9A CN105174198A (en) 2015-08-12 2015-08-12 Acceleration sensor of package structure and preparation method thereof

Publications (1)

Publication Number Publication Date
CN105174198A true CN105174198A (en) 2015-12-23

Family

ID=54896744

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510493467.9A CN105174198A (en) 2015-08-12 2015-08-12 Acceleration sensor of package structure and preparation method thereof

Country Status (1)

Country Link
CN (1) CN105174198A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106526232A (en) * 2016-11-14 2017-03-22 广东合微集成电路技术有限公司 Composite sensor and manufacture method thereof
CN107478198A (en) * 2017-07-28 2017-12-15 北京航天控制仪器研究所 A kind of high-precision MEMS angular transducers sensitive structure and processing method
CN108675260A (en) * 2018-05-30 2018-10-19 南京元感微电子有限公司 A kind of anode linkage method of the substrate and glass of band structure figure

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1570651A (en) * 2004-04-29 2005-01-26 中国科学院上海微系统与信息技术研究所 Accelerometer with static self test realized by single silicon slice micro mechanical technique
EP1561724A1 (en) * 2004-02-06 2005-08-10 General Electric Company Micromechanical device with thinned cantilever structure and related methods
US20080179698A1 (en) * 2005-05-12 2008-07-31 Delphi Technologies, Inc. Piezoresistive sensing structure
CN101271124A (en) * 2008-05-16 2008-09-24 中国科学院上海微系统与信息技术研究所 L-beam piezoresistance type micro-accelerometer and production method thereof
CN101692099A (en) * 2009-10-16 2010-04-07 中国人民解放军国防科学技术大学 Piezoresistive double-shaft micro-accelerometer with on-chip zero offset compensation and manufacturing method thereof
CN102157679A (en) * 2009-12-28 2011-08-17 通用电气公司 Method for fabricating a sensor
CN102298075A (en) * 2011-05-23 2011-12-28 西安交通大学 Acceleration sensor chip with compound multiple-beam structure and manufacturing method thereof
CN102768290A (en) * 2012-05-31 2012-11-07 北京时代民芯科技有限公司 MEMS (micro-electrochemical systems) accelerometer and production method thereof
CN104062463A (en) * 2014-06-13 2014-09-24 浙江工业大学 Piezoresistive acceleration sensor and manufacturing method thereof
CN104062464A (en) * 2014-06-13 2014-09-24 浙江工业大学 MEMS piezoresistive accelerated speed and pressure integration sensor and manufacturing method
CN104062462A (en) * 2014-06-13 2014-09-24 浙江工业大学 MEMS piezoresistive accelerated speed sensor and manufacturing method thereof

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1561724A1 (en) * 2004-02-06 2005-08-10 General Electric Company Micromechanical device with thinned cantilever structure and related methods
CN1570651A (en) * 2004-04-29 2005-01-26 中国科学院上海微系统与信息技术研究所 Accelerometer with static self test realized by single silicon slice micro mechanical technique
US20080179698A1 (en) * 2005-05-12 2008-07-31 Delphi Technologies, Inc. Piezoresistive sensing structure
CN101271124A (en) * 2008-05-16 2008-09-24 中国科学院上海微系统与信息技术研究所 L-beam piezoresistance type micro-accelerometer and production method thereof
CN101692099A (en) * 2009-10-16 2010-04-07 中国人民解放军国防科学技术大学 Piezoresistive double-shaft micro-accelerometer with on-chip zero offset compensation and manufacturing method thereof
CN102157679A (en) * 2009-12-28 2011-08-17 通用电气公司 Method for fabricating a sensor
CN102298075A (en) * 2011-05-23 2011-12-28 西安交通大学 Acceleration sensor chip with compound multiple-beam structure and manufacturing method thereof
CN102768290A (en) * 2012-05-31 2012-11-07 北京时代民芯科技有限公司 MEMS (micro-electrochemical systems) accelerometer and production method thereof
CN104062463A (en) * 2014-06-13 2014-09-24 浙江工业大学 Piezoresistive acceleration sensor and manufacturing method thereof
CN104062464A (en) * 2014-06-13 2014-09-24 浙江工业大学 MEMS piezoresistive accelerated speed and pressure integration sensor and manufacturing method
CN104062462A (en) * 2014-06-13 2014-09-24 浙江工业大学 MEMS piezoresistive accelerated speed sensor and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106526232A (en) * 2016-11-14 2017-03-22 广东合微集成电路技术有限公司 Composite sensor and manufacture method thereof
CN107478198A (en) * 2017-07-28 2017-12-15 北京航天控制仪器研究所 A kind of high-precision MEMS angular transducers sensitive structure and processing method
CN108675260A (en) * 2018-05-30 2018-10-19 南京元感微电子有限公司 A kind of anode linkage method of the substrate and glass of band structure figure

Similar Documents

Publication Publication Date Title
CN101551403B (en) Integrated silicon chip for testing acceleration, pressure and temperature, and manufacturing method thereof
US8186221B2 (en) Vertically integrated MEMS acceleration transducer
US9073746B2 (en) MEMS pressure sensor and manufacturing method therefor
US7382599B2 (en) Capacitive pressure sensor
US9073745B2 (en) MEMS pressure sensor and manufacturing method therefor
JP2013011587A (en) Dynamic quantity sensor device and method for manufacturing the same
JP3464657B2 (en) Device configured using diaphragm-based sensor
CN101389940B (en) Pressure sensor with silicon frit bonded cap
JP2012042460A (en) Mems pressure sensor apparatus and method for manufacturing the same
CN102589762B (en) Micro-voltage high-overload sensor chip of beam membrane single island structure
CN102583232B (en) Method for fabricating a sensor
US9046546B2 (en) Sensor device and related fabrication methods
CN104034454B (en) A kind of sensor chip for many physical quantities and preparation method thereof
CN103420325B (en) For the method manufacturing the component of hybrid integrated
CN1303426C (en) Wind speed sensor based on micro mechanic working and its producing method
US6860154B2 (en) Pressure sensor and manufacturing method thereof
US20120270355A1 (en) Inertial sensor and method of manufacturing the same
KR20030086228A (en) Pressure sensor
US7622782B2 (en) Pressure sensors and methods of making the same
CN102313621B (en) Sensor and manufacture method thereof
JP2011137818A (en) Method for fabricating sensor
CN105241369B (en) A kind of MEMS strain gauges chip and its manufacturing process
CA2777309C (en) Device for measuring environmental forces and method of fabricating the same
CN102749473B (en) Two-dimensional hot-film wind speed and direction sensor and preparation method thereof
JP2006010623A (en) Pressure sensor

Legal Events

Date Code Title Description
PB01 Publication
C06 Publication
SE01 Entry into force of request for substantive examination
C10 Entry into substantive examination
CB02 Change of applicant information

Inventor after: Liu Ying

Inventor after: Zeng Hongjiang

Inventor after: Hu Guojun

Inventor after: Sheng Wenjun

Inventor before: Zeng Hongjiang

Inventor before: Hu Guojun

Inventor before: Liu Ying

Inventor before: Sheng Wenjun

CB03 Change of inventor or designer information
RJ01 Rejection of invention patent application after publication

Application publication date: 20151223

RJ01 Rejection of invention patent application after publication