CN104776951B - A kind of MEMS Piezoresistive Pressure Sensor and preparation method thereof - Google Patents
A kind of MEMS Piezoresistive Pressure Sensor and preparation method thereof Download PDFInfo
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Abstract
The present invention relates to a kind of MEMS Piezoresistive Pressure Sensor and preparation method thereof, sensor includes what position set gradually from the bottom to top, monocrystalline silicon piece substrate, the first insulating barrier, monocrystalline silicon piece pressure membrane, the second insulating barrier, patterned metal lead, the 3rd insulating barrier；The upper surface of monocrystalline silicon piece substrate opens up fluted, pressure drag bar is adulterated by light boron in upper surface by monocrystalline silicon piece pressure membrane and forms and be circumferentially symmetrical arranged two-by-two four, four pressure drag bars are p-type and are distributed in the edge inner side of groove corresponding region, patterned metal lead makes four pressure drag bars realize joining end to end by electrical contact hole, and four are offered on the 3rd insulating barrier for patterned metal lead and the outside electrode hole for carrying out routing.The present invention has the advantages that simple structure, with low cost, stable performance, its preparation method process is simple, high yield rate, and can realize mass production.
Description
Technical field
The present invention relates to a kind of gas pressure detection unit, more particularly, to a kind of pressure resistance type for being applied to MEMS
MEMS pressure sensor, and sensor preparation method.
Background technology
Brakes, engine system in automobile, tire pressure monitoring system, with other industrial gasses Stress controls and family
With technical fields such as gaseous-pressure Monitoring and Controllings, gas pressure sensor has a wide range of applications.In these areas, adopt mostly
With medium range baroceptor, the air pressure range monitored is generally between 500kPa~10MPa.With micromechanics Department of Electronics
The development of system (MEMS), the technology development of sensor has tended to mass, miniaturization, just because of the MEMS body silicon systems of mass
The advantage of technology is made, miniature MEMS sensor instead of traditional sensor.
Pressure sensor can be divided into two kinds of absolute pressure formula and gauge pressure formula according to the difference of its zero reference point.In medium range gas
Body pressure sensing arts, absolute pressure formula MEMS pressure sensor can be divided into capacitive MEMS pressure sensor again based on its measuring principle
With two kinds of MEMS Piezoresistive Pressure Sensor.One of pole of the capacitive MEMS pressure sensor using pressure membrane as electric capacity
Plate, when pressure membrane deforms with external pressure, on electric capacity the distance between bottom crown can change therewith from
And cause output capacitance to change, reflect air pressure by capacitance variations.Capacitive MEMS pressure sensor detection electric capacity is needed
AC signal is utilized, the circuit of process signal is complex, and cause that the sensor cost after encapsulation is also higher.Pressure resistance type
MEMS pressure sensor mainly make use of the piezoresistive effect of silicon crystal, cause doped resistor to change by the deformation of pressure membrane
Become, corresponding air pressure can be reflected by the change of resistance.The change of MEMS Piezoresistive Pressure Sensor detection resistance is only needed
Detection signal is can be achieved with by simple Wheatstone bridge to export, circuit structure is relatively simple, meanwhile, pressure resistance type MEMS pressure
Sensor can utilize the MEMS technology of mass to make, and have the advantages that mass, finished product high.
But pressure drag bar holds under the MEMS pressure sensor based on piezoresistive principles has high cost, hot conditions in the prior art
Easily there is electric leakage with silicon substrate so as to influence the technological deficiency of stability, such as Chinese invention patent CN200880007360 and
CN201210340683, this two products of patent, as the substrate material of pressure sensor chip, are compared using soi wafer
It is relatively costly as pressure sensor chip using common monocrystalline silicon piece；And United States Patent (USP) US006006607A and
Technical scheme disclosed in US006543292B1, although employ base sheet of the common monocrystalline silicon piece as pressure sensor chip
Material so that the manufacturing cost of its product is minimized, but its be simply by light boron doping process on monocrystalline silicon piece
Pressure drag is made, the electrical insulation performance of pressure drag is relatively low, and particularly pressure drag bar easily leaks electricity with silicon substrate under the high temperature conditions, greatly
The big stability for reducing sensor.
The content of the invention
It is an object of the invention to provide a kind of MEMS Piezoresistive Pressure Sensor and preparation method thereof, sensor has structure
Simply, with low cost, stable performance advantage, and its preparation method process is simple, high yield rate, and batch metaplasia can be realized
Produce.
It is to solve the high cost that traditional MEMS Piezoresistive Pressure Sensor is present in the prior art, pressure drag under the high temperature conditions
Easily there is electric leakage with silicon substrate so as to influence the technological deficiency of stability, a kind of MEMS Piezoresistive Pressure Sensor of the invention in bar
Including monocrystalline silicon piece substrate, monocrystalline silicon piece pressure membrane, pressure drag bar, patterned metal lead, the first insulating barrier, the second insulating barrier,
3rd insulating barrier, monocrystalline silicon piece substrate, the first insulating barrier, monocrystalline silicon piece pressure membrane, the second insulating barrier, patterned metal lead,
The position of the 3rd insulating barrier sets gradually from the bottom to top；The upper surface of monocrystalline silicon piece substrate opens up fluted, on the first insulating barrier
Offer the corresponding through hole in and position identical with the shape of groove；Pressure drag bar passes through light boron by monocrystalline silicon piece pressure membrane in upper surface
Adulterate and form and be circumferentially symmetrical arranged two-by-two four, four pressure drag bars are p-type and are distributed in the edge of groove corresponding region
Inner side, position corresponding with each pressure drag bar two ends offers electrical contact hole, patterned metal lead on the second insulating barrier
Four pressure drag bars are made to realize joining end to end by electrical contact hole；Four are offered on 3rd insulating barrier to draw for patterned metal
Line and the outside electrode hole for carrying out routing, groove are shaped as rectangle or circle, symmetrical above and below point of two in four pressure drag bars
Cloth is set on the inside of the lower edges of groove corresponding region and along stress direction, and another two pressure drag bar is symmetrical to be distributed in groove
The left and right edges inner side of corresponding region is simultaneously set along vertical stress direction, and each pressure drag bar is set to four sections for being distributed side by side and leads to
Cross patterned metal lead and be connected as an entirety, the upper surface of monocrystalline silicon piece pressure membrane is additionally provided with what is formed by dense phosphorus doping
Isolation strip, four sections in each pressure drag bar are spaced apart by isolation strip.
Preferably, the two ends of each section are equipped with the electricity contact to be formed of being adulterated by dense boron in each pressure drag bar, each
The two ends of each section are connected by electricity contact with patterned metal lead in pressure drag bar.
Alternatively, the material of patterned metal lead is Al, Au, Cu, Ni, Ag, Pt or alloy of conductive matter.
Alternatively, the first insulating barrier, the second insulating barrier, the material of the 3rd insulating barrier are the titanium dioxide with insulating property (properties)
The composite membrane of silicon, silicon nitride, organic film or silica and silicon nitride, the first insulating barrier, the second insulating barrier, the 3rd insulation
The thickness of layer is 1nm~100 μm.
Present invention also offers a kind of method for preparing MEMS Piezoresistive Pressure Sensor, comprise the following steps,
First, monocrystalline silicon piece substrate and monocrystalline silicon piece pressure membrane are prepared；
2nd, the first insulating barrier of formation is deposited in monocrystalline silicon piece substrate using MEMS thin film deposition processes, makes the first insulation
The thickness of layer is 1nm~100 μm, and rectangular opening or circular port are outputed on the first insulating barrier by etching technics, in monocrystalline silicon
Corresponding rectangular recess or circular groove are outputed in piece substrate；
3rd, monocrystalline silicon piece pressure membrane is bonded on the first insulating barrier using bonding technology, and by monocrystalline silicon piece pressure membrane
It is worked into the thickness of needs；
4th, pressure drag bar is set in monocrystalline silicon piece pressure membrane using light boron doping process；
5th, the second insulating barrier of formation is deposited in monocrystalline silicon piece pressure membrane using MEMS thin film deposition processes, is made second exhausted
The thickness of edge layer is 1nm~100 μm, and outputs the end points electrical contact of pressure drag bar over the second dielectric using etching technics
Hole；
6th, deposit to form metallic film over the second dielectric using MEMS deposit metal films technique, and by figure
Chemical industry skill forms patterned metal lead；
7th, deposit to form the 3rd insulating barrier in the last layer of patterned metal lead using MEMS thin film deposition processes, make
The thickness of the 3rd insulating barrier is 1nm~100 μm, and four patterned metals are outputed on the 3rd insulating barrier using etching technics draws
Line and the outside electrode hole for carrying out routing.
Preferably, the operation of isolation strip also is set using dense phosphorus doping technique in above-mentioned steps four and utilizes dense boron
Doping process sets the operation of electricity contact, and be spaced apart four sections in each pressure drag bar by isolation strip, in each pressure drag bar
Every section of two ends be equipped with electricity contact, electricity contact is used to strengthen the Ohmic contact between pressure drag bar and patterned metal lead
Characteristic.
Alternatively, the MEMS thin film deposition processes in above-mentioned steps two, step 5 and step 7 are oxidation technology, low pressure
Chemical vapor deposition (LPCVD) technique, plasma reinforced chemical vapour deposition (PECVD) technique, sol gel process or organic
Material coats curing process.
Alternatively, the etching technics in above-mentioned steps two, step 5 and step 7 is dry ionic etching technics, XeF
Gaseous corrosion technique, wet anisotropic etching process, wet method isotropic etch technique, focused-ion-beam lithography (FIB) work
Skill or laser etching process.
Alternatively, the bonding technology in above-mentioned steps three is silicon silicon thermal bonding technique, applies source bonding technology, organic gel key
Close technique, inter-metallic bond technique or glass paste bonding technology.
Alternatively, the MEMS deposit metal films technique in above-mentioned steps six be sputtering sedimentation skill, electron beam evaporation sink
Product technique, heating evaporation depositing operation, electroplating deposition technique, electroless deposition technique or chemical replacement reaction process.
Alternatively, the doping process in above-mentioned steps four is ion implantation doping process or applies source diffusing, doping technique.
Compared with traditional piezoresistive pressure sensor, the present invention has advantages below：(1) present invention is figure using metal film
Shape metal lead wire realizes that all of sensor internal are electrically connected to substitute traditional dense boron doping, so as to avoid dense boron
Doping makes the defect that pressure drag bar easily leaks electricity with silicon base under the high temperature conditions, improves the electricity stabilization of pressure sensor
Property；(2) as further prioritization scheme, the present invention also by light boron adulterating the pressure drag bar to be formed around increase dense phosphorus doping
Technique forms isolation strip, is spaced apart each section of pressure drag bar, and raises the current potential in dense phosphorus doping region in use, enters one
Step enhances the PN junction insulating properties between pressure drag bar and silicon base, considerably improves the stability of sensor；(3) present invention
Electricity contact also is set using dense boron doping process at every section of two ends of pressure drag bar, pressure drag bar and patterned metal lead is enhanced
Between ohmic contact characteristic.The improvement of said structure can not only effectively improve the performance and stability of sensor, and it is made
Standby technique is compatible with traditional cmos process, has the advantages that simple structure, easy to implement, technical maturity, with low cost, and can be real
Existing mass production.
Shown specific embodiment is to a kind of MEMS Piezoresistive Pressure Sensor of the invention and its preparation below in conjunction with the accompanying drawings
Method is described in further detail：
Brief description of the drawings
Fig. 1 is a kind of internal structure schematic diagram of the first implementation method of MEMS Piezoresistive Pressure Sensor of the invention；
Fig. 2 is the Section A-A schematic diagram in Fig. 1；
Fig. 3 is the section B-B schematic diagram in Fig. 1；
Fig. 4 is the C-C schematic cross-sections in Fig. 1；
Fig. 5 is the D-D schematic cross-sections in Fig. 1；
Fig. 6 is a kind of internal structure schematic diagram of second implementation method of MEMS Piezoresistive Pressure Sensor of the invention；
Fig. 7 is the close-up schematic view of the Z1 positions in Fig. 6；
Fig. 8 is the close-up schematic view of the Z2 positions in Fig. 6；
Fig. 9 is the E-E schematic cross-sections in Fig. 6；
Figure 10 is the F-F schematic cross-sections in Fig. 6；
Figure 11-12 be a kind of MEMS Piezoresistive Pressure Sensor of the invention in preparation process by the signal after step one
Figure, wherein Figure 12 is the G-G schematic cross-sections in Figure 11；
Figure 13-14 be a kind of MEMS Piezoresistive Pressure Sensor of the invention in preparation process by the signal after step 2
Figure, wherein Figure 14 is the H-H schematic cross-sections in Figure 13；
Figure 15-16 be a kind of MEMS Piezoresistive Pressure Sensor of the invention in preparation process by the signal after step 3
Figure, wherein Figure 16 is the I-I schematic cross-sections in Figure 15；
Figure 17-18 be a kind of MEMS Piezoresistive Pressure Sensor of the invention in preparation process by the signal after step 4
Figure, wherein Figure 18 is the J-J schematic cross-sections in Figure 17；
Figure 19-20 be a kind of MEMS Piezoresistive Pressure Sensor of the invention in preparation process by the signal after step 5
Figure, wherein Figure 20 is the K-K schematic cross-sections in Figure 19；
Figure 21-22 be a kind of MEMS Piezoresistive Pressure Sensor of the invention in preparation process by the signal after step 6
Figure, wherein Figure 22 is the L-L schematic cross-sections in Figure 21；
Figure 23-24 be a kind of MEMS Piezoresistive Pressure Sensor of the invention in preparation process by the signal after step 7
Figure, wherein Figure 24 is the M-M schematic cross-sections in Figure 23.
Specific embodiment
The internal junction of of the invention a kind of the first implementation method of MEMS Piezoresistive Pressure Sensor as shown in Figures 1 to 5
Structure schematic diagram, is provided with monocrystalline silicon piece substrate 1, monocrystalline silicon piece pressure membrane 2, pressure drag bar 3, patterned metal lead 4, the first insulating barrier
5th, the second insulating barrier 6, the 3rd insulating barrier 7, monocrystalline silicon piece substrate 1, the first insulating barrier 5, monocrystalline silicon piece pressure membrane 2, second insulate
Layer 6, patterned metal lead 4, the position of the 3rd insulating barrier 7 set gradually from the bottom to top.In the upper surface of monocrystalline silicon piece substrate 1
Foursquare groove 101 is opened up, as the vacuum chamber of whole pressure sensor, and is opened up and groove 101 on the first insulating barrier 5
The corresponding through hole of shape same position, thus monocrystalline silicon piece pressure membrane 2 just become sensing ambient pressure pressure membrane.
Light boron doping process is carried out in the upper surface of monocrystalline silicon piece pressure membrane 2 and form four p-type pressure drag bars 3, allow four pressures
Resistance bar 3 is symmetrically distributed in lower edges and the left and right edges inner side of the corresponding region of groove 101 two-by-two, and allows upper and lower two pressure drag bars
3 are set along stress direction (longitudinal direction), allow the two pressure drag bars 3 in left and right to be set along vertical stress direction (transverse direction).In the second insulating barrier 6
Upper position corresponding with each two ends of pressure drag bar 3 opens up electrical contact hole, makes the patterned metal lead 4 can by electrical contact hole
It is connected with each pressure drag bar, and realizes that four pressure drag bars 3 join end to end, such four resistor stripes 3 and patterned metal lead 4
It is formed a Wheatstone bridge.Four are opened up on the 3rd insulating barrier 7 to be beaten for patterned metal lead 4 and outside
The electrode hole of line, outwardly to export electrical signal.
To save the space of each pressure drag bar and so that all pressure drag bars are distributed near pressure membrane maximum stress, this reality
Apply that mode is set to each pressure drag bar 3 to be distributed side by side four sections and an entirety is connected as by patterned metal lead 4, kept away
Exempt to realize that each section of pressure drag bar interconnects brought temperature instability using dense boron doping process in conventional pressure sensor.
By above structure setting, when monocrystalline silicon piece pressure membrane 2 bears extraneous stress, upper and lower two longitudinal directions set
Can there is difference, four with the change in resistance amount of the pressure drag bar 3 of left and right two horizontally sets in the change in resistance amount of the pressure drag bar 3 put
The balance of the Wheatstone bridge of individual resistor stripe 3 and the composition of patterned metal lead 4 will be broken, and produce certain output electricity
Pressure, Wheatstone bridge is more uneven, and output voltage is bigger.Therefore the change of output voltage can directly reflect monocrystalline silicon piece pressure
The pressure size born on power film 2.
The internal junction of second implementation method of of the invention a kind of MEMS Piezoresistive Pressure Sensor as shown in Fig. 6 to Figure 10
Structure schematic diagram, unlike the first implementation method, present embodiment also sets in the upper surface of monocrystalline silicon piece pressure membrane 2 and passes through
The isolation strip 8 that dense phosphorus doping technique is formed, makes each section in each pressure drag bar 3 to be spaced apart by isolation strip 8.This structure
Set, realize all pressure drag bars and all completely cut off by dense phosphorus, can be by isolation strip 8 during the use of pressure sensor
Current potential improve, the effective electricity isolation performance of lifting pressure drag bar 3, Wheatstone bridge leaks electricity under preventing hot conditions, enters
One step improves pressure sensor stability at high temperature.Meanwhile, present embodiment each section also in each pressure drag bar 3
Two ends set and are adulterated by dense boron the electricity contact 9 to be formed, allow each section in each pressure drag bar 3 two ends by electricity contact 9
It is connected with patterned metal lead 4, the ohmic contact characteristic between pressure drag bar 3 and patterned metal lead 4 can be strengthened.
It should be noted that the shape of further groove of the present invention 101 is not limited to positive way, it is also designed to circular, rectangular
Shape or other shapes, as long as the ambient pressure that pressure membrane is born into upper and lower and symmetrical i.e. achievable the object of the invention can be made.
In addition, the material of patterned metal lead 4 can be various with conductive characteristic using Al, Au, Cu, Ni, Ag, Pt, alloy film etc.
Metal material；First insulating barrier 5, the second insulating barrier 6, the material of the 3rd insulating barrier 7 can be adopted as silicon dioxide film, nitridation
Silicon fiml, silica and silicon nitride meet the various thin-film materials with insulation characterisitic such as film, organic film, and its thickness range should
It is 1nm to 100 μm.
The method for preparing a kind of MEMS Piezoresistive Pressure Sensor of the invention is elaborated below, such as Figure 12 to Figure 24
Shown, it is comprised the following steps,
First, as needed, prepare monocrystalline silicon piece substrate 1 and monocrystalline silicon piece pressure membrane 2, be processed into required thickness；
2nd, the first insulating barrier 5 of formation is deposited in monocrystalline silicon piece substrate 1 using MEMS thin film deposition processes, is made first exhausted
The thickness of edge layer 5 is 1nm~100 μm, and outputs rectangular opening or circular port on the first insulating barrier 5 by etching technics, in list
Corresponding rectangular recess or circular groove are outputed in crystal silicon chip substrate 1；
3rd, monocrystalline silicon piece pressure membrane 2 is bonded on the first insulating barrier 5 using bonding technology；
4th, as needed, pressure drag bar 3 is set in monocrystalline silicon piece pressure membrane 2 using light boron doping process, is mixed using dense phosphorus
General labourer's skill sets isolation strip 8 around every section of pressure drag bar, and electricity is set at every section of two ends of pressure drag bar using dense boron doping process
Contact；
5th, the second insulating barrier 6 of formation is deposited in monocrystalline silicon piece pressure membrane 2 using MEMS thin film deposition processes, makes second
The thickness of insulating barrier 6 is 1nm~100 μm, and outputs the end points electricity of pressure drag bar 3 on the second insulating barrier 6 using etching technics
Contact hole；
6th, deposited on the second insulating barrier 6 using MEMS deposit metal films technique and form metallic film, and by figure
Chemical industry skill forms patterned metal lead 4, patterned metal lead 4 is connected with each pressure drag bar by electrical contact hole, and
Realize that four pressure drag bars 3 join end to end；
7th, deposit to form the 3rd insulating barrier 7 in the last layer of patterned metal lead 4 using MEMS thin film deposition processes,
Make the thickness of the 3rd insulating barrier 7 for 1nm~100 μm, and four graphical gold are outputed on the 3rd insulating barrier 7 using etching technics
Category lead 4 and the outside electrode hole for carrying out routing, outwardly to export electrical signal.
It is pointed out that the MEMS thin film deposition processes mentioned in above-mentioned steps two, step 5 and step 7 can be with
Using oxidation technology, low-pressure chemical vapor deposition (LPCVD) technique, plasma reinforced chemical vapour deposition (PECVD) technique, molten
Gel process or organic material coating curing process identical functions technique.
The etching technics mentioned in above-mentioned steps two, step 5 and step 7 can using dry ionic etching technics,
XeF gaseous corrosions technique, wet anisotropic etching process, wet method isotropic etch technique, focused-ion-beam lithography (FIB)
Technique or laser etching process identical functions technique.
The bonding technology mentioned in above-mentioned steps three can using silicon silicon thermal bonding technique, apply source bonding technology, organic
Glue bonding technology, inter-metallic bond technique or glass paste bonding technology identical functions technique.
The doping process mentioned in above-mentioned steps four can be using ion implantation doping process or painting source diffusing, doping work
Skill identical functions technique.
The MEMS deposit metal films technique mentioned in above-mentioned steps six can use sputtering sedimentation skill, electron beam evaporation
Depositing operation, heating evaporation depositing operation, electroplating deposition technique, electroless deposition technique or chemical replacement reaction process are equal to
Function technique.
Above example is only the description carried out to the preferred embodiment of the present invention, and model not is claimed to the present invention
The restriction for carrying out is enclosed, on the premise of design spirit of the present invention is not departed from, this area engineers and technicians are according to skill of the invention
The various forms of deformations that art scheme is made, all should fall into the protection domain of claims of the present invention determination.
Claims (11)
1. a kind of MEMS Piezoresistive Pressure Sensor, including monocrystalline silicon piece substrate (1), monocrystalline silicon piece pressure membrane (2), pressure drag bar
(3), it is characterised in that：Also include patterned metal lead (4), the first insulating barrier (5), the second insulating barrier (6), the 3rd insulating barrier
(7), monocrystalline silicon piece substrate (1), the first insulating barrier (5), monocrystalline silicon piece pressure membrane (2), the second insulating barrier (6), patterned metal
Lead (4), the position of the 3rd insulating barrier (7) set gradually from the bottom to top；The upper surface of monocrystalline silicon piece substrate (1) opens up fluted
(101) and position corresponding through hole identical with the shape of groove (101), is offered on the first insulating barrier (5)；Pressure drag bar (3) by
Monocrystalline silicon piece pressure membrane (2) adulterates to form and circumferentially be symmetrical arranged two-by-two four, four pressure drag bars in upper surface by light boron
(3) it is p-type and is distributed in the edge inner side of groove (101) corresponding region, with each pressure drag bar (3) on the second insulating barrier (6)
The corresponding position in two ends offers electrical contact hole, and patterned metal lead (4) makes four pressure drag bars by electrical contact hole
(3) realize joining end to end；Four are offered on 3rd insulating barrier (7) carries out routing for patterned metal lead (4) and outside
Electrode hole, the groove (101) is shaped as rectangle or circle, and two in four pressure drag bars (3) are symmetrical above and below is distributed in
The lower edges inner side of groove (101) corresponding region is simultaneously set along stress direction, and another two pressure drag bar (3) is symmetrical to be distributed in
The left and right edges inner side of groove (101) corresponding region is simultaneously set along vertical stress direction, and described each pressure drag bar (3) is set to simultaneously
Arrange four sections of distribution and an entirety, the upper table of the monocrystalline silicon piece pressure membrane (2) are connected as by patterned metal lead (4)
Face is additionally provided with the isolation strip (8) formed by dense phosphorus doping, and four sections in each pressure drag bar (3) pass through isolation strip (8) each other
Separate.
2. according to a kind of MEMS Piezoresistive Pressure Sensor described in claim 1, it is characterised in that：Described each pressure drag bar
(3) two ends of each section are equipped with the electricity contact (9) to be formed of being adulterated by dense boron in, each section in each pressure drag bar (3)
Two ends are connected by electricity contact (9) with patterned metal lead (4).
3. according to a kind of MEMS Piezoresistive Pressure Sensor described in claim any one of 1-2, it is characterised in that：The figure
The material for changing metal lead wire (4) is Al, Au, Cu, Ni, Ag, Pt or alloy of conductive matter.
4. according to a kind of MEMS Piezoresistive Pressure Sensor described in claim any one of 1-2, it is characterised in that：Described first
Insulating barrier (5), the second insulating barrier (6), the material of the 3rd insulating barrier (7) are the silica with insulating property (properties), silicon nitride, have
The composite membrane of machine film or silica and silicon nitride, the first insulating barrier (5), the second insulating barrier (6), the 3rd insulating barrier (7)
Thickness be 1nm~100 μm.
5. the method for preparing the MEMS Piezoresistive Pressure Sensor described in claim 1, it is characterised in that：Comprise the following steps,
First, monocrystalline silicon piece substrate (1) and monocrystalline silicon piece pressure membrane (2) are prepared；
2nd, the first insulating barrier of formation (5) is deposited in monocrystalline silicon piece substrate (1) using MEMS thin film deposition processes, is made first exhausted
The thickness of edge layer (5) is 1nm~100 μm, and outputs rectangular opening or circular port on the first insulating barrier (5) by etching technics,
Corresponding rectangular recess or circular groove are outputed in monocrystalline silicon piece substrate (1)；
3rd, monocrystalline silicon piece pressure membrane (2) is bonded on the first insulating barrier (5) using bonding technology, and by monocrystalline silicon piece pressure
Film (2) is worked into the thickness of needs；
4th, pressure drag bar (3) is set in monocrystalline silicon piece pressure membrane (2) using light boron doping process；
5th, the second insulating barrier of formation (6) is deposited in monocrystalline silicon piece pressure membrane (2) using MEMS thin film deposition processes, makes second
The thickness of insulating barrier (6) is 1nm~100 μm, and outputs the end of pressure drag bar (3) on the second insulating barrier (6) using etching technics
Point electrical contact hole；
6th, deposited on the second insulating barrier (6) using MEMS deposit metal films technique and form metallic film, and by graphical
Technique forms patterned metal lead (4)；
7th, deposit to form the 3rd insulating barrier (7) in the last layer of patterned metal lead (4) using MEMS thin film deposition processes,
Make the thickness of the 3rd insulating barrier (7) for 1nm~100 μm, and utilize etching technics to output four on the 3rd insulating barrier (7) to be used for
Patterned metal lead (4) and the outside electrode hole for carrying out routing.
6. according to the method for preparing MEMS Piezoresistive Pressure Sensor described in claim 5, it is characterised in that：The step 4
In also using dense phosphorus doping technique set isolation strip (8) operation and using dense boron doping process set electricity contact (9)
Operation, be spaced apart four sections in each pressure drag bar (3) by isolation strip (8), and every section of two ends in each pressure drag bar (3) are equal
Electricity contact (9) is provided with, electricity contact (9) are for strengthening the Ohmic contact between pressure drag bar (3) and patterned metal lead (4)
Characteristic.
7. according to the method for preparing MEMS Piezoresistive Pressure Sensor described in claim 6, it is characterised in that：The step
2nd, the MEMS thin film deposition processes in step 5 and step 7 be oxidation technology, low-pressure chemical vapor deposition (LPCVD) technique,
Plasma reinforced chemical vapour deposition (PECVD) technique, sol gel process or organic material coating curing process.
8. according to the method for preparing MEMS Piezoresistive Pressure Sensor described in claim 6, it is characterised in that：The step
2nd, the etching technics in step 5 and step 7 is dry ionic etching technics, XeF gaseous corrosions technique, wet anisotropic
Etching process, wet method isotropic etch technique, focused-ion-beam lithography (FIB) technique or laser etching process.
9. according to the method for preparing MEMS Piezoresistive Pressure Sensor described in claim 6, it is characterised in that：The step 3
In bonding technology be silicon silicon thermal bonding technique, apply source bonding technology, organic gel bonding technology, inter-metallic bond technique or glass
Slurry bonding technology.
10. according to the method for preparing MEMS Piezoresistive Pressure Sensor described in claim 6, it is characterised in that：The step
MEMS deposit metal films technique in six is sputter deposition craft, electron-beam evaporation technique, heating evaporation depositing operation,
Electroplating deposition technique, electroless deposition technique or chemical replacement reaction process.
11. according to the method for preparing MEMS Piezoresistive Pressure Sensor described in claim 6, it is characterised in that：The step
Doping process in four is ion implantation doping process or painting source diffusing, doping technique.
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| CN105738025A (en) * | 2016-03-24 | 2016-07-06 | 东南大学 | Pressure sensor and preparation mehtod |
| US10095342B2 (en) * | 2016-11-14 | 2018-10-09 | Google Llc | Apparatus for sensing user input |
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