CN110567619A - A high-sensitivity pressure sensor and its manufacturing method - Google Patents

A high-sensitivity pressure sensor and its manufacturing method Download PDF

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CN110567619A
CN110567619A CN201910891454.5A CN201910891454A CN110567619A CN 110567619 A CN110567619 A CN 110567619A CN 201910891454 A CN201910891454 A CN 201910891454A CN 110567619 A CN110567619 A CN 110567619A
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piezoresistive
silicon wafer
substrate
pressure sensor
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CN110567619B (en
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陈巧
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Suzhou Zhixin Sensing Technology Co ltd
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Nanjing Pierre Intelligent Sensor Technology Co Ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/20Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/225Measuring circuits therefor
    • G01L1/2262Measuring circuits therefor involving simple electrical bridges
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/04Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

本发明涉及一种高灵敏度压力传感器及其制作方法,采用全新一体化设计工艺,通过刻蚀一系列操作,获得所设计高灵敏度压力传感器,能够形成应力集中区域,同时保证线性度,提高压力检测的灵敏度,其中,通过四个压阻体(4)的纵向布置,形成4个敏感电阻,构成惠世通电桥,其中边缘两个承受压应力,中间两个承受拉应力,由于四个敏感电阻完全一样布置,且初始电阻相同,则实际应用中,具有近乎完美的零点输出,大大提高了压力传感器的检查精度。

The invention relates to a high-sensitivity pressure sensor and a manufacturing method thereof. A new integrated design process is adopted to obtain a designed high-sensitivity pressure sensor through a series of etching operations, which can form a stress concentration area while ensuring linearity and improving pressure detection. Sensitivity, wherein, through the longitudinal arrangement of four piezoresistive bodies (4), 4 sensitive resistors are formed to form a Huishitong bridge, of which two at the edge bear compressive stress and two in the middle bear tensile stress, due to the four sensitive resistors The arrangement is exactly the same, and the initial resistance is the same, so in practical applications, it has a nearly perfect zero point output, which greatly improves the inspection accuracy of the pressure sensor.

Description

一种高灵敏度压力传感器及其制作方法A high-sensitivity pressure sensor and its manufacturing method

技术领域technical field

本发明涉及一种高灵敏度压力传感器及其制作方法,属于微机电系统技术领域。The invention relates to a high-sensitivity pressure sensor and a manufacturing method thereof, belonging to the technical field of micro-electromechanical systems.

背景技术Background technique

相对于传统的机械,MEMS器件的尺寸更小,一般在微米到毫米量级,它基于半导体集成电路(IC)制作工艺,可大量利用IC生产中的成熟技术、工艺,进行大批量、低成本生产,使性价比相对于传统“机械”制造技术大幅度提高;现有压力传感器中,四个压阻体分别布置在四个侧边上,并没有采用应力集中区域,导致灵敏度不高,而且线性度也不好。Compared with traditional machinery, the size of MEMS devices is smaller, generally on the order of microns to millimeters. It is based on the semiconductor integrated circuit (IC) manufacturing process, and can make large-scale, low-cost production by utilizing mature technologies and processes in IC production. Compared with the traditional "mechanical" manufacturing technology, the cost performance is greatly improved; in the existing pressure sensor, the four piezoresistive bodies are respectively arranged on the four sides, and the stress concentration area is not used, resulting in low sensitivity and linearity. The degree is not good.

发明内容Contents of the invention

本发明所要解决的技术问题是提供一种高灵敏度压力传感器,能够形成应力集中区域,同时保证线性度,提高压力检测的灵敏度。The technical problem to be solved by the present invention is to provide a high-sensitivity pressure sensor that can form a stress concentration area while ensuring linearity and improving the sensitivity of pressure detection.

本发明为了解决上述技术问题采用以下技术方案:本发明设计了一种高灵敏度压力传感器,包括盒体、隔板、衬底和四个压阻体;其中,盒体的顶面设置凹陷腔体,隔板固定设置于盒体顶面凹陷腔体沿口一周;衬底为多边环形结构,且衬底的各部位共面,衬底固定设置于隔板上表面,且衬底多边环形结构的中间区域位置与盒体顶面凹陷腔体位置彼此相对应,以及盒体顶面凹陷腔体内部呈真空状态;In order to solve the above technical problems, the present invention adopts the following technical solutions: the present invention designs a high-sensitivity pressure sensor, including a box body, a partition, a substrate, and four piezoresistive bodies; wherein, the top surface of the box body is provided with a concave cavity , the partition is fixedly arranged on the top surface of the box body along the edge of the concave cavity; the substrate is a polygonal ring structure, and all parts of the substrate are in the same plane, the substrate is fixed on the upper surface of the partition, and the substrate is of a polygonal ring structure The position of the middle area corresponds to the position of the concave cavity on the top surface of the box body, and the cavity inside the concave cavity on the top surface of the box body is in a vacuum state;

四个压阻体的结构彼此相同,各压阻体分别均包括至少两根压阻条,各压阻条长度彼此相等;各压阻体中,各压阻条彼此平行、且共面,相邻压阻条串联、构成一根曲线结构,且以平行压阻条、并过两侧最外侧压阻条之间中间位置的直线为轴,曲线结构呈轴对称;The structures of the four piezoresistive bodies are identical to each other, and each piezoresistive body includes at least two piezoresistive strips, and the lengths of the piezoresistive strips are equal to each other; in each piezoresistive body, the piezoresistive strips are parallel to each other and coplanar. Adjacent piezoresistive strips are connected in series to form a curved structure, and the straight line parallel to the piezoresistive strips and the middle position between the outermost piezoresistive strips on both sides is taken as the axis, and the curved structure is axisymmetric;

各压阻体曲线结构的两端分别通过导线、固定对接衬底多边环形结构的内侧边,各压阻体与各导线位于衬底多边环形结构的中间区域,且各压阻体与各导线固定于隔板上表面;各压阻体所在面彼此共面,各个压阻体上平行于压阻条的对称轴所在直线相共线,且该共线过衬底多边环形结构彼此相对两内侧边的中点位置,相邻压阻体彼此之间呈轴对称;The two ends of each piezoresistive curved structure pass through wires and are fixedly connected to the inner side of the polygonal ring structure of the substrate. Fixed on the upper surface of the separator; the faces of the piezoresistive bodies are coplanar with each other, and the straight lines parallel to the symmetry axes of the piezoresistive strips on each piezoresistive body are collinear, and the collinear cross-substrate polygonal ring structures are opposite to each other. At the midpoint of the side, adjacent piezoresistive bodies are axisymmetric to each other;

衬底上表面设置分别与各导线相连接的各个焊盘,通过向各个焊盘供电,经导线分别向各压阻体供电,其中,两侧的两个压阻体承受压应力,中间的两个压阻体承受拉应力。The upper surface of the substrate is provided with pads connected to the wires respectively. By supplying power to each pad, power is supplied to each piezoresistive body through the wires. Among them, the two piezoresistive bodies on both sides bear compressive stress, and the two piezoresistive bodies in the middle A piezoresistive body is subjected to tensile stress.

作为本发明的一种优选技术方案:所述衬底为矩形环形结构,所述各压阻体曲线结构的两端分别通过导线、固定对接衬底矩形环形结构彼此相对的两内侧边,各压阻体和其两端所连导线的整体结构,以其平行于压阻条的对称轴呈轴对称。As a preferred technical solution of the present invention: the substrate is a rectangular ring structure, and the two ends of the piezoresistive curve structures are respectively connected to the two inner sides of the rectangular ring structure of the docking substrate through wires and opposite to each other. The overall structure of the piezoresistive body and the wires connected at its two ends is axisymmetric with its axis of symmetry parallel to the piezoresistive strip.

作为本发明的一种优选技术方案:所述盒体、隔板、衬底均为硅材料制成,所述各根压阻条、以及各根导线通过针对硅材料的离子注入构成。As a preferred technical solution of the present invention: the box body, the partition, and the substrate are all made of silicon material, and the piezoresistive strips and wires are formed by ion implantation of the silicon material.

与上述相对应,本发明还要解决的技术问题是提供一种针对高灵敏度压力传感器的制作方法,采用全新一体化设计工艺,通过刻蚀一系列操作,获得所设计高灵敏度压力传感器,能够形成应力集中区域,同时保证线性度,提高压力检测的灵敏度。Corresponding to the above, the technical problem to be solved by the present invention is to provide a manufacturing method for a high-sensitivity pressure sensor, adopt a new integrated design process, and obtain the designed high-sensitivity pressure sensor through a series of etching operations, which can form Stress concentration areas, while ensuring linearity, improve the sensitivity of pressure detection.

本发明为了解决上述技术问题采用以下技术方案:本发明设计了一种针对高灵敏度压力传感器的制作方法,应用两片硅片,实现高灵敏度压力传感器的制作,包括如下步骤:In order to solve the above-mentioned technical problems, the present invention adopts the following technical solutions: the present invention designs a method for manufacturing a high-sensitivity pressure sensor, and uses two silicon wafers to realize the production of a high-sensitivity pressure sensor, including the following steps:

步骤A.针对第一硅片的上表面进行氧化处理,获得位于第一硅片上表面的氧化层;Step A. performing oxidation treatment on the upper surface of the first silicon wafer to obtain an oxide layer located on the upper surface of the first silicon wafer;

步骤B.针对第一硅片上表面的氧化层图形化,并刻蚀获得位于第一硅片上表面的凹陷腔体;Step B. patterning the oxide layer on the upper surface of the first silicon wafer, and etching to obtain a recessed cavity located on the upper surface of the first silicon wafer;

步骤C.针对第二硅片的下表面进行氧化处理,获得位于第二硅片下表面的氧化层;Step C. performing oxidation treatment on the lower surface of the second silicon wafer to obtain an oxide layer located on the lower surface of the second silicon wafer;

步骤D.在真空环境下,将第二硅片下表面的氧化层与第一硅片上表面键合,由第二硅片对第一硅片上表面的凹陷腔体实现覆盖;Step D. In a vacuum environment, bonding the oxide layer on the lower surface of the second silicon wafer to the upper surface of the first silicon wafer, and covering the concave cavity on the upper surface of the first silicon wafer by the second silicon wafer;

步骤E.由第二硅片的上表面,针对第二硅片进行减薄处理至预设厚度,然后针对第二硅片的上表面进行氧化处理,获得位于第二硅片上表面的氧化层;Step E. Thinning the second silicon wafer to a preset thickness from the upper surface of the second silicon wafer, and then performing oxidation treatment on the upper surface of the second silicon wafer to obtain an oxide layer on the upper surface of the second silicon wafer ;

步骤F.针对第二硅片上表面的氧化层图形化,并刻蚀该氧化层获得分别对应于各根压阻条、各根导线的注入口;Step F. patterning the oxide layer on the upper surface of the second silicon wafer, and etching the oxide layer to obtain injection ports corresponding to each piezoresistive strip and each wire;

步骤G.针对第二硅片上表面氧化层上的各个注入口,分别进行离子注入,由各个离子注入位置分别构成各根压阻条、各根导线;Step G. Carry out ion implantation for each injection port on the oxide layer on the upper surface of the second silicon wafer, and each ion implantation position constitutes each piezoresistive strip and each wire;

步骤H.针对第二硅片上表面图形化,针对各根压阻条、各根导线的周围区域刻蚀预设厚度,且刻蚀深度高于第二硅片的下底面,由此构成环绕各根压阻条、各根导线的多边环形结构衬底;Step H. For patterning the upper surface of the second silicon wafer, etch the preset thickness for each piezoresistive strip and the surrounding area of each wire, and the etching depth is higher than the lower bottom surface of the second silicon wafer, thereby forming a surrounding area. A polygonal annular structure substrate for each piezoresistive strip and each wire;

步骤I.针对各根压阻条表面、各根导线表面、以及衬底多边环形结构的中间区域,淀积一层绝缘层;Step 1. For the surface of each piezoresistive strip, the surface of each wire, and the middle area of the substrate polygonal ring structure, deposit a layer of insulating layer;

步骤J.针对第二硅片上表面氧化层图形化,并开窗,再淀积金属材料,构成各个焊盘。Step J. Patterning the oxide layer on the upper surface of the second silicon wafer, opening windows, and depositing metal materials to form each pad.

作为本发明的一种优选技术方案:所述步骤A中,针对第一硅片的上表面先进行抛光处理,再进行氧化处理;所述步骤C中,针对第二硅片的下表面先进行抛光处理,再进行氧化处理。As a preferred technical solution of the present invention: in the step A, the upper surface of the first silicon chip is firstly polished, and then oxidized; in the step C, the lower surface of the second silicon chip is firstly treated Polishing treatment followed by oxidation treatment.

作为本发明的一种优选技术方案:若所述压力传感器为差压传感器,还包括步骤K,执行完步骤J之后,进入步骤K;As a preferred technical solution of the present invention: if the pressure sensor is a differential pressure sensor, step K is also included, and step K is entered after step J is performed;

步骤K.针对第一硅片的下表面图形化,构成第一硅片下表面的镂空结构。Step K. Patterning the lower surface of the first silicon wafer to form a hollow structure on the lower surface of the first silicon wafer.

本发明所述一种高灵敏度压力传感器及其制作方法,采用以上技术方案与现有技术相比,具有以下技术效果:A high-sensitivity pressure sensor and its manufacturing method described in the present invention, compared with the prior art by adopting the above technical scheme, has the following technical effects:

本发明所设计高灵敏度压力传感器及其制作方法,采用全新一体化设计工艺,通过刻蚀一系列操作,获得所设计高灵敏度压力传感器,能够形成应力集中区域,同时保证线性度,提高压力检测的灵敏度,其中,通过四个压阻体的纵向布置,形成4个敏感电阻,构成惠世通电桥,其中边缘两个承受压应力,中间两个承受拉应力,由于四个敏感电阻完全一样布置,且初始电阻相同,则实际应用中,具有近乎完美的零点输出,大大提高了压力传感器的检查精度。The high-sensitivity pressure sensor designed in the present invention and its manufacturing method adopt a new integrated design process and obtain the designed high-sensitivity pressure sensor through a series of etching operations, which can form a stress concentration area while ensuring linearity and improving pressure detection. Sensitivity, wherein, through the longitudinal arrangement of four piezoresistive bodies, four sensitive resistors are formed to form a Huishitong bridge, of which two on the edge bear compressive stress, and two in the middle bear tensile stress. Since the four sensitive resistors are arranged exactly the same, And the initial resistance is the same, in practical application, it has a nearly perfect zero point output, which greatly improves the inspection accuracy of the pressure sensor.

附图说明Description of drawings

图1是本发明设计高灵敏度压力传感器实施例一的俯视示意图;Fig. 1 is a schematic top view of Embodiment 1 of designing a high-sensitivity pressure sensor in the present invention;

图2是本发明设计高灵敏度压力传感器实施例二的立体示意图;Fig. 2 is a three-dimensional schematic diagram of Embodiment 2 of the present invention designing a high-sensitivity pressure sensor;

图3是本发明设计高灵敏度压力传感器制作方法中步骤A的结果示意图;Fig. 3 is the schematic diagram of the results of step A in the method for manufacturing a high-sensitivity pressure sensor of the present invention;

图4是本发明设计高灵敏度压力传感器制作方法中步骤B的结果示意图;Fig. 4 is the schematic diagram of the results of step B in the method for manufacturing a high-sensitivity pressure sensor designed in the present invention;

图5是本发明设计高灵敏度压力传感器制作方法中步骤D的结果示意图;Fig. 5 is a schematic diagram of the results of step D in the method for manufacturing a high-sensitivity pressure sensor designed in the present invention;

图6是本发明设计高灵敏度压力传感器制作方法中步骤E的结果示意图;Fig. 6 is a schematic diagram of the results of step E in the method for manufacturing a high-sensitivity pressure sensor designed in the present invention;

图7是本发明设计高灵敏度压力传感器制作方法中步骤F的结果示意图;Fig. 7 is a schematic diagram of the results of step F in the method for manufacturing a high-sensitivity pressure sensor designed in the present invention;

图8是本发明设计高灵敏度压力传感器制作方法中步骤H的结果示意图;Fig. 8 is a schematic diagram of the results of step H in the method for designing a high-sensitivity pressure sensor of the present invention;

图9是本发明设计高灵敏度压力传感器制作方法中步骤I的结果示意图;Fig. 9 is a schematic diagram of the results of step I in the method for manufacturing a high-sensitivity pressure sensor designed in the present invention;

图10是本发明设计高灵敏度压力传感器制作方法中步骤J的结果示意图;Fig. 10 is a schematic diagram of the result of step J in the method for manufacturing a high-sensitivity pressure sensor designed in the present invention;

图11是本发明设计高灵敏度压力传感器实施中引线方向的应力分布示意图。Fig. 11 is a schematic diagram of the stress distribution in the direction of the lead wire in the implementation of the design of the high-sensitivity pressure sensor of the present invention.

其中,1.盒体,2.隔板,3.衬底,4.压阻体,5.凹陷腔体,6.导线,7.焊盘,8.第一硅片,9.氧化层,10.第二硅片,11.绝缘层,12.金属材料。Among them, 1. box body, 2. partition, 3. substrate, 4. piezoresistive body, 5. recessed cavity, 6. wire, 7. welding pad, 8. first silicon wafer, 9. oxide layer, 10. Second silicon wafer, 11. Insulation layer, 12. Metal material.

具体实施方式Detailed ways

下面结合说明书附图对本发明的具体实施方式作进一步详细的说明。The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings.

本发明设计了一种高灵敏度压力传感器,实际应用当中,如图1和图2所示,包括盒体1、隔板2、衬底3和四个压阻体4;其中,盒体1的顶面设置凹陷腔体5,隔板2固定设置于盒体1顶面凹陷腔体5沿口一周;衬底3为多边环形结构,且衬底3的各部位共面,衬底3固定设置于隔板2上表面,且衬底3多边环形结构的中间区域位置与盒体1顶面凹陷腔体5位置彼此相对应,以及盒体1顶面凹陷腔体5内部呈真空状态。The present invention designs a high-sensitivity pressure sensor. In practical applications, as shown in Figure 1 and Figure 2, it includes a box body 1, a partition plate 2, a substrate 3 and four piezoresistive bodies 4; wherein, the box body 1 The top surface is provided with a concave cavity 5, and the partition plate 2 is fixedly arranged on the top surface of the box body 1 along the edge of the concave cavity 5; the substrate 3 is a polygonal ring structure, and all parts of the substrate 3 are coplanar, and the substrate 3 is fixed On the upper surface of the partition plate 2, the position of the middle region of the polygonal ring structure of the substrate 3 corresponds to the position of the recessed cavity 5 on the top surface of the box body 1, and the interior of the recessed cavity 5 on the top surface of the box body 1 is in a vacuum state.

四个压阻体4的结构彼此相同,各压阻体4分别均包括至少两根压阻条,各压阻条长度彼此相等;各压阻体4中,各压阻条彼此平行、且共面,相邻压阻条串联、构成一根曲线结构,且以平行压阻条、并过两侧最外侧压阻条之间中间位置的直线为轴,曲线结构呈轴对称。The structures of the four piezoresistive bodies 4 are identical to each other, each piezoresistive body 4 includes at least two piezoresistive strips, and the lengths of each piezoresistive strip are equal to each other; in each piezoresistive body 4, each piezoresistive strip is parallel to each other On the surface, adjacent piezoresistive strips are connected in series to form a curved structure, and the straight line parallel to the piezoresistive strips and passing through the middle position between the outermost piezoresistive strips on both sides is taken as the axis, and the curved structure is axisymmetric.

各压阻体4曲线结构的两端分别通过导线6、固定对接衬底3多边环形结构的内侧边,各压阻体4与各导线6位于衬底3多边环形结构的中间区域,且各压阻体4与各导线6固定于隔板2上表面;各压阻体4所在面彼此共面,各个压阻体4上平行于压阻条的对称轴所在直线相共线,且该共线过衬底3多边环形结构彼此相对两内侧边的中点位置,相邻压阻体4彼此之间呈轴对称。The two ends of the curved structure of each piezoresistive body 4 are respectively passed through the wire 6 and fixedly connected to the inner side of the polygonal ring structure of the substrate 3, and each piezoresistive body 4 and each wire 6 are located in the middle area of the polygonal ring structure of the substrate 3, and each The piezoresistive bodies 4 and the wires 6 are fixed on the upper surface of the partition plate 2; the faces of the piezoresistive bodies 4 are coplanar with each other, and the straight lines parallel to the symmetry axes of the piezoresistive strips on the piezoresistive bodies 4 are collinear, and the common The lines pass through the midpoints of the inner sides of the polygonal ring structures of the substrate 3 opposite to each other, and the adjacent piezoresistive bodies 4 are axially symmetrical to each other.

实际产品设计中,盒体1、隔板2、衬底3均为硅材料制成,所述各根压阻条、以及各根导线6通过针对硅材料的离子注入构成;衬底3为矩形环形结构,所述各压阻体4曲线结构的两端分别通过导线6、固定对接衬底3矩形环形结构彼此相对的两内侧边,各压阻体4和其两端所连导线6的整体结构,以其平行于压阻条的对称轴呈轴对称。In the actual product design, the box body 1, the partition plate 2, and the substrate 3 are all made of silicon material, and the piezoresistive strips and the wires 6 are formed by ion implantation for the silicon material; the substrate 3 is rectangular Ring structure, the two ends of each piezoresistive body 4 curve structure pass through the wire 6 and the two inner sides of the rectangular ring structure of the fixed docking substrate 3 respectively. The overall structure is axisymmetric with its axis of symmetry parallel to the piezoresistive strip.

衬底3上表面设置分别与各导线6相连接的各个焊盘7,通过向各个焊盘7供电,经导线6分别向各压阻体4供电,其中,两侧的两个压阻体4承受压应力,中间的两个压阻体4承受拉应力。The upper surface of the substrate 3 is provided with each pad 7 connected to each wire 6 respectively, and by supplying power to each pad 7, power is supplied to each piezoresistive body 4 through the wire 6, wherein the two piezoresistive bodies 4 on both sides Under compressive stress, the two piezoresistive bodies 4 in the middle bear tensile stress.

基于上述技术方案,最终构成图1或图2所示高灵敏度压力传感器。Based on the above technical solution, the high-sensitivity pressure sensor shown in Fig. 1 or Fig. 2 is finally constructed.

针对技术方案上述所设计高灵敏度压力传感器,本发明进一步设计了其制作方法,实际应用中,具体应用两片硅片,实现高灵敏度压力传感器的制作,包括如下步骤。Aiming at the high-sensitivity pressure sensor designed above in the technical solution, the present invention further designs its manufacturing method. In practical application, two silicon wafers are specifically used to realize the manufacturing of the high-sensitivity pressure sensor, including the following steps.

步骤A.针对第一硅片8的上表面先进行抛光处理,再进行氧化处理,获得位于第一硅片8上表面的氧化层9,如图3所示。Step A. Perform polishing treatment on the upper surface of the first silicon wafer 8 first, and then perform oxidation treatment to obtain an oxide layer 9 located on the upper surface of the first silicon wafer 8, as shown in FIG. 3 .

步骤B.针对第一硅片8上表面的氧化层9图形化,并刻蚀获得位于第一硅片8上表面的凹陷腔体5,如图4所示。Step B. Patterning the oxide layer 9 on the upper surface of the first silicon wafer 8, and etching to obtain a recessed cavity 5 located on the upper surface of the first silicon wafer 8, as shown in FIG. 4 .

步骤C.针对第二硅片10的下表面先进行抛光处理,再进行氧化处理,获得位于第二硅片10下表面的氧化层9。Step C. Perform polishing treatment on the lower surface of the second silicon wafer 10 first, and then perform oxidation treatment to obtain the oxide layer 9 located on the lower surface of the second silicon wafer 10 .

步骤D.在真空环境下,将第二硅片10下表面的氧化层9与第一硅片8上表面键合,由第二硅片10对第一硅片8上表面的凹陷腔体5实现覆盖,如图5所示。Step D. In a vacuum environment, the oxide layer 9 on the lower surface of the second silicon wafer 10 is bonded to the upper surface of the first silicon wafer 8, and the concave cavity 5 on the upper surface of the first silicon wafer 8 is formed by the second silicon wafer 10 To achieve coverage, as shown in Figure 5.

步骤E.由第二硅片10的上表面,针对第二硅片10进行减薄处理至预设厚度,然后针对第二硅片10的上表面进行氧化处理,获得位于第二硅片10上表面的氧化层9,如图6所示。Step E. Thinning the second silicon wafer 10 to a predetermined thickness from the upper surface of the second silicon wafer 10, and then performing oxidation treatment on the upper surface of the second silicon wafer 10 to obtain The oxide layer 9 on the surface is shown in FIG. 6 .

步骤F.针对第二硅片10上表面的氧化层9图形化,并刻蚀该氧化层9获得分别对应于各根压阻条、各根导线6的注入口,如图7所示。Step F. Patterning the oxide layer 9 on the upper surface of the second silicon wafer 10, and etching the oxide layer 9 to obtain injection ports corresponding to each piezoresistive strip and each wire 6, as shown in FIG. 7 .

步骤G.针对第二硅片10上表面氧化层9上的各个注入口,分别进行离子注入,由各个离子注入位置分别构成各根压阻条、各根导线6,实际应用中,此步骤中的离子注入可以设计采用多次注入,使导线具有更小的电阻率。Step G. Carry out ion implantation for each injection port on the oxide layer 9 on the upper surface of the second silicon wafer 10, and form each piezoresistive strip and each wire 6 by each ion implantation position. In practical applications, in this step The ion implantation can be designed to use multiple implants to make the wire have smaller resistivity.

步骤H.针对第二硅片10上表面图形化,针对各根压阻条、各根导线6的周围区域刻蚀预设厚度,且刻蚀深度高于第二硅片10的下底面,由此构成环绕各根压阻条、各根导线6的多边环形结构衬底3,如图8所示。Step H. For patterning the upper surface of the second silicon wafer 10, etch the preset thickness for each piezoresistive strip and the surrounding area of each wire 6, and the etching depth is higher than the lower bottom surface of the second silicon wafer 10, by This constitutes a polygonal annular structure substrate 3 surrounding each piezoresistive strip and each wire 6 , as shown in FIG. 8 .

步骤I.针对各根压阻条表面、各根导线6表面、以及衬底3多边环形结构的中间区域,淀积一层绝缘层11,如图9所示。Step I. Deposit a layer of insulating layer 11 on the surface of each piezoresistive strip, the surface of each wire 6, and the middle area of the polygonal ring structure of the substrate 3, as shown in FIG. 9 .

步骤J.针对第二硅片10上表面氧化层图形化,并开窗,再淀积金属材料12,构成各个焊盘7,如图10所示。Step J. Pattern the oxide layer on the upper surface of the second silicon wafer 10, open a window, and then deposit metal material 12 to form each pad 7, as shown in FIG. 10 .

在具体实际应用中,若所述压力传感器为差压传感器,还包括步骤K,执行完步骤J之后,进入步骤K。In a specific practical application, if the pressure sensor is a differential pressure sensor, step K is also included, and step K is entered after step J is performed.

步骤K.针对第一硅片8的下表面图形化,构成第一硅片8下表面的镂空结构。Step K. Patterning the lower surface of the first silicon wafer 8 to form a hollow structure on the lower surface of the first silicon wafer 8 .

上述技术方案所设计高灵敏度压力传感器及制作方法,在实际应用当中,采用全新一体化设计工艺,通过刻蚀一系列操作,获得所设计高灵敏度压力传感器,能够形成应力集中区域,同时保证线性度,提高压力检测的灵敏度,其中,通过四个压阻体4的纵向布置,形成4个敏感电阻,构成惠世通电桥,其中边缘两个承受压应力,中间两个承受拉应力,由于四个敏感电阻完全一样布置,且初始电阻相同,则实际应用中,具有近乎完美的零点输出,大大提高了压力传感器的检查精度。The high-sensitivity pressure sensor and manufacturing method designed by the above technical solution, in practical application, adopts a new integrated design process, and obtains the designed high-sensitivity pressure sensor through a series of etching operations, which can form a stress concentration area while ensuring linearity , to improve the sensitivity of pressure detection, wherein, through the longitudinal arrangement of four piezoresistive bodies 4, four sensitive resistors are formed to form a Huishitong bridge, in which two of the edges bear compressive stress, and the middle two bear tensile stress. The sensitive resistors are arranged exactly the same, and the initial resistance is the same, so in practical applications, it has a nearly perfect zero output, which greatly improves the inspection accuracy of the pressure sensor.

并且在具体的实际应用实施中,如图11所示,引线在压力作用下X方向的应力分布情况。由于该方向的应力具有拉应力和压应力,其产生的电阻变化大都可以相互抵消,残余部分对灵敏度的影响可以忽略。And in a specific practical implementation, as shown in FIG. 11 , the stress distribution in the X direction of the lead wire under pressure. Since the stress in this direction has tensile stress and compressive stress, most of the resistance changes produced by it can cancel each other out, and the influence of the remaining part on the sensitivity can be ignored.

上面结合附图对本发明的实施方式作了详细说明,但是本发明并不限于上述实施方式,在本领域普通技术人员所具备的知识范围内,还可以在不脱离本发明宗旨的前提下做出各种变化。The embodiments of the present invention have been described in detail above in conjunction with the accompanying drawings, but the present invention is not limited to the above embodiments, and can also be made without departing from the gist of the present invention within the scope of knowledge possessed by those of ordinary skill in the art. Variations.

Claims (6)

1. a high sensitivity pressure sensor, characterized by: comprises a box body (1), a clapboard (2), a substrate (3) and four piezoresistive bodies (4); wherein, the top surface of the box body (1) is provided with a concave cavity (5), and the clapboard (2) is fixedly arranged on the periphery of the edge of the concave cavity (5) on the top surface of the box body (1); the substrate (3) is of a polygonal annular structure, all parts of the substrate (3) are coplanar, the substrate (3) is fixedly arranged on the upper surface of the partition plate (2), the position of the middle area of the polygonal annular structure of the substrate (3) corresponds to the position of the concave cavity (5) on the top surface of the box body (1), and the interior of the concave cavity (5) on the top surface of the box body (1) is in a vacuum state;
the four piezoresistive bodies (4) have the same structure, each piezoresistive body (4) comprises at least two piezoresistive strips, and the lengths of the piezoresistive strips are equal to each other; in each piezoresistive body (4), each piezoresistive strip is parallel and coplanar, adjacent piezoresistive strips are connected in series to form a curve structure, a straight line which is parallel to the piezoresistive strips and passes through the middle position between the outermost piezoresistive strips at two sides is taken as an axis, and the curve structure is axisymmetric;
Two ends of the curve structure of each piezoresistive body (4) are fixedly butted with the inner side edge of the polygonal annular structure of the substrate (3) through a conducting wire (6), each piezoresistive body (4) and each conducting wire (6) are positioned in the middle area of the polygonal annular structure of the substrate (3), and each piezoresistive body (4) and each conducting wire (6) are fixed on the upper surface of the partition plate (2); the surfaces of the piezoresistive bodies (4) are coplanar, the straight lines on the piezoresistive bodies (4) parallel to the symmetry axis of the piezoresistive strips are collinear, the collinear lines pass through the middle points of two opposite inner side edges of the polygonal annular structure of the substrate (3), and the adjacent piezoresistive bodies (4) are axisymmetric;
the upper surface of the substrate (3) is provided with each bonding pad (7) which is respectively connected with each lead (6), and power is supplied to each bonding pad (7) and each piezoresistive body (4) through the leads (6), wherein two piezoresistive bodies (4) on two sides bear compressive stress, and two piezoresistive bodies (4) in the middle bear tensile stress.
2. A high sensitivity pressure sensor as claimed in claim 1, wherein: the substrate (3) is of a rectangular annular structure, two ends of the curve structure of each piezoresistive body (4) are fixedly connected with two opposite inner side edges of the rectangular annular structure of the substrate (3) through a conducting wire (6), and the integral structure of each piezoresistive body (4) and the conducting wires (6) connected with the two ends of the piezoresistive body is axisymmetric with a symmetry axis parallel to the piezoresistive strips.
3. A high sensitivity pressure sensor as claimed in claim 1, wherein: the box body (1), the partition plate (2) and the substrate (3) are all made of silicon materials, and each piezoresistive strip and each lead (6) are formed by ion implantation of the silicon materials.
4. a method for manufacturing a high-sensitivity pressure sensor according to any one of claims 1 to 3, wherein two silicon wafers are used to realize the manufacture of the high-sensitivity pressure sensor, comprising the following steps:
Step A, carrying out oxidation treatment on the upper surface of a first silicon wafer (8) to obtain an oxidation layer (9) positioned on the upper surface of the first silicon wafer (8);
B, patterning an oxide layer (9) on the upper surface of the first silicon wafer (8), and etching to obtain a recessed cavity (5) on the upper surface of the first silicon wafer (8);
C, carrying out oxidation treatment on the lower surface of the second silicon wafer (10) to obtain an oxidation layer (9) positioned on the lower surface of the second silicon wafer (10);
Step D, bonding the oxide layer (9) on the lower surface of the second silicon wafer (10) with the upper surface of the first silicon wafer (8) in a vacuum environment, and covering the sunken cavity (5) on the upper surface of the first silicon wafer (8) by the second silicon wafer (10);
E, thinning the second silicon wafer (10) to a preset thickness from the upper surface of the second silicon wafer (10), and then oxidizing the upper surface of the second silicon wafer (10) to obtain an oxide layer (9) on the upper surface of the second silicon wafer (10);
f, patterning the oxide layer (9) on the upper surface of the second silicon wafer (10), and etching the oxide layer (9) to obtain injection ports respectively corresponding to each pressure barrier strip and each lead (6);
g, respectively injecting ions into each injection hole on the oxide layer (9) on the upper surface of the second silicon wafer (10), and respectively forming each pressure barrier and each lead (6) by each ion injection position;
Step H, patterning the upper surface of the second silicon wafer (10), and etching the surrounding areas of each pressure barrier strip and each lead (6) to a preset thickness, wherein the etching depth is higher than the lower bottom surface of the second silicon wafer (10), so that a substrate (3) with a polygonal annular structure surrounding each pressure barrier strip and each lead (6) is formed;
I, depositing an insulating layer (11) aiming at the surfaces of the pressure resistance strips, the surfaces of the leads (6) and the middle area of the polygonal annular structure of the substrate (3);
And J, patterning the oxide layer on the upper surface of the second silicon wafer (10), windowing, and depositing a metal material (12) to form each bonding pad (7).
5. The method of claim 4, wherein the method further comprises: in the step A, polishing treatment is firstly carried out on the upper surface of the first silicon wafer (8), and then oxidation treatment is carried out; and in the step C, polishing treatment is firstly carried out on the lower surface of the second silicon wafer (10), and then oxidation treatment is carried out.
6. the method of claim 4, wherein the method further comprises: if the pressure sensor is a differential pressure sensor, the method also comprises a step K, and after the step J is executed, the step K is executed;
and K, patterning the lower surface of the first silicon chip (8) to form a hollow structure of the lower surface of the first silicon chip (8).
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