CN110567619A - High-sensitivity pressure sensor and manufacturing method thereof - Google Patents
High-sensitivity pressure sensor and manufacturing method thereof Download PDFInfo
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- CN110567619A CN110567619A CN201910891454.5A CN201910891454A CN110567619A CN 110567619 A CN110567619 A CN 110567619A CN 201910891454 A CN201910891454 A CN 201910891454A CN 110567619 A CN110567619 A CN 110567619A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 230000035945 sensitivity Effects 0.000 claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 66
- 229910052710 silicon Inorganic materials 0.000 claims description 66
- 239000010703 silicon Substances 0.000 claims description 66
- 235000012431 wafers Nutrition 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 17
- 230000003647 oxidation Effects 0.000 claims description 14
- 238000007254 oxidation reaction Methods 0.000 claims description 14
- 238000005192 partition Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 239000002210 silicon-based material Substances 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims 2
- 238000001514 detection method Methods 0.000 abstract description 6
- 238000012938 design process Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/225—Measuring circuits therefor
- G01L1/2262—Measuring circuits therefor involving simple electrical bridges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
the invention relates to a high-sensitivity pressure sensor and a manufacturing method thereof, wherein a brand new integrated design process is adopted, a series of operations are etched to obtain the designed high-sensitivity pressure sensor, a stress concentration area can be formed, the linearity is ensured, and the sensitivity of pressure detection is improved, wherein 4 sensitive resistors are formed by longitudinal arrangement of four piezoresistive bodies (4) to form a Wheatstone bridge, two of the edges bear compressive stress, and two of the middle edges bear tensile stress.
Description
Technical Field
The invention relates to a high-sensitivity pressure sensor and a manufacturing method thereof, belonging to the technical field of micro-electro-mechanical systems.
Background
Compared with the traditional machinery, the MEMS device has smaller size, generally in the micron to millimeter level, is based on the manufacturing process of a semiconductor Integrated Circuit (IC), can greatly utilize the mature technology and process in the IC production to carry out mass production with low cost, and greatly improves the cost performance compared with the traditional 'machinery' manufacturing technology; in the existing pressure sensor, four piezoresistive bodies are respectively arranged on four side edges, and a stress concentration area is not adopted, so that the sensitivity is not high, and the linearity is not good.
Disclosure of Invention
the invention aims to provide a high-sensitivity pressure sensor which can form a stress concentration area, simultaneously ensure the linearity and improve the sensitivity of pressure detection.
The invention adopts the following technical scheme for solving the technical problems: the invention designs a high-sensitivity pressure sensor, which comprises a box body, a partition plate, a substrate and four piezoresistive bodies, wherein the box body is provided with a through hole; the top surface of the box body is provided with a concave cavity, and the partition board is fixedly arranged on the periphery of the edge of the concave cavity on the top surface of the box body; the substrate is of a polygonal annular structure, all parts of the substrate are coplanar, the substrate is fixedly arranged on the upper surface of the partition plate, the position of the middle area of the polygonal annular structure of the substrate corresponds to the position of the concave cavity on the top surface of the box body, and the interior of the concave cavity on the top surface of the box body is in a vacuum state;
The four piezoresistive bodies have the same structure, each piezoresistive body comprises at least two piezoresistive strips, and the lengths of the piezoresistive strips are equal to each other; in each piezoresistive body, each piezoresistive strip is parallel and coplanar, adjacent piezoresistive strips are connected in series to form a curve structure, a straight line which is parallel to the piezoresistive strips and passes through the middle position between the outermost piezoresistive strips at two sides is taken as an axis, and the curve structure is axisymmetric;
the two ends of each piezoresistive body curve structure are fixedly butted with the inner side edge of the substrate polygonal annular structure through conducting wires respectively, each piezoresistive body and each conducting wire are positioned in the middle area of the substrate polygonal annular structure, and each piezoresistive body and each conducting wire are fixed on the upper surface of the partition plate; the surfaces of the piezoresistors are coplanar with each other, the straight lines parallel to the symmetry axes of the piezoresistors on the piezoresistors are collinear, the collinear lines pass through the middle points of the two opposite inner side edges of the polygonal annular structure of the substrate, and the adjacent piezoresistors are axially symmetrical;
The substrate upper surface is provided with each bonding pad connected with each lead respectively, and power is supplied to each piezoresistive body through the leads by supplying power to each bonding pad, wherein two piezoresistive bodies on two sides bear compressive stress, and two piezoresistive bodies in the middle bear tensile stress.
As a preferred technical scheme of the invention: the substrate is a rectangular annular structure, two ends of the curve structure of each piezoresistive body are fixedly connected with two opposite inner side edges of the rectangular annular structure of the substrate through conducting wires respectively, and the integral structure of each piezoresistive body and the conducting wires connected with the two ends of the piezoresistive body is axisymmetric with a symmetry axis parallel to the piezoresistive strips.
as a preferred technical scheme of the invention: the box body, the partition plate and the substrate are all made of silicon materials, and each piezoresistive strip and each lead are formed by ion implantation of the silicon materials.
in view of the above, the present invention provides a method for manufacturing a high-sensitivity pressure sensor, which obtains a designed high-sensitivity pressure sensor by a new integrated design process and a series of etching operations, and can form a stress concentration region, ensure linearity, and improve sensitivity of pressure detection.
The invention adopts the following technical scheme for solving the technical problems: the invention designs a manufacturing method for a high-sensitivity pressure sensor, which realizes the manufacturing of the high-sensitivity pressure sensor by applying two silicon wafers and comprises the following steps:
Step A, carrying out oxidation treatment on the upper surface of a first silicon wafer to obtain an oxidation layer positioned on the upper surface of the first silicon wafer;
B, patterning an oxide layer on the upper surface of the first silicon chip, and etching to obtain a recessed cavity on the upper surface of the first silicon chip;
C, carrying out oxidation treatment on the lower surface of the second silicon wafer to obtain an oxidation layer positioned on the lower surface of the second silicon wafer;
bonding an oxide layer on the lower surface of a second silicon wafer with the upper surface of the first silicon wafer in a vacuum environment, and covering a concave cavity on the upper surface of the first silicon wafer by the second silicon wafer;
E, thinning the second silicon wafer from the upper surface of the second silicon wafer to a preset thickness, and then oxidizing the upper surface of the second silicon wafer to obtain an oxide layer on the upper surface of the second silicon wafer;
Step F, patterning the oxide layer on the upper surface of the second silicon chip, and etching the oxide layer to obtain injection ports respectively corresponding to each pressure barrier strip and each lead;
g, respectively injecting ions into each injection hole on the oxide layer on the upper surface of the second silicon chip, and respectively forming each pressure barrier strip and each lead wire by each ion injection position;
Step H, patterning the upper surface of the second silicon wafer, etching the surrounding area of each pressure barrier and each lead to a preset thickness, wherein the etching depth is higher than the lower bottom surface of the second silicon wafer, and thus forming a polygonal annular structure substrate surrounding each pressure barrier and each lead;
i, depositing an insulating layer on the surfaces of the pressure resistance strips, the surfaces of the lead wires and the middle area of the polygonal annular structure of the substrate;
and J, patterning the oxide layer on the upper surface of the second silicon chip, windowing, and depositing a metal material to form each bonding pad.
as a preferred technical scheme of the invention: in the step A, polishing treatment is firstly carried out on the upper surface of the first silicon wafer, and then oxidation treatment is carried out; and in the step C, polishing the lower surface of the second silicon wafer, and then oxidizing.
as a preferred technical scheme of the invention: if the pressure sensor is a differential pressure sensor, the method also comprises a step K, and after the step J is executed, the step K is executed;
and K, patterning the lower surface of the first silicon wafer to form a hollow structure of the lower surface of the first silicon wafer.
Compared with the prior art, the high-sensitivity pressure sensor and the manufacturing method thereof have the following technical effects:
the high-sensitivity pressure sensor and the manufacturing method thereof adopt a brand new integrated design process, and the designed high-sensitivity pressure sensor is obtained by a series of etching operations, so that a stress concentration area can be formed, the linearity is ensured, and the sensitivity of pressure detection is improved, wherein 4 sensitive resistors are formed by the longitudinal arrangement of four piezoresistive bodies to form a Wheatstone bridge, wherein two edges bear the compressive stress, and two middle edges bear the tensile stress, and because the four sensitive resistors are completely arranged in the same way and the initial resistors are the same, the zero output is nearly perfect in practical application, and the detection precision of the pressure sensor is greatly improved.
Drawings
FIG. 1 is a schematic top view of a first embodiment of a high sensitivity pressure sensor of the present invention;
FIG. 2 is a schematic perspective view of a second embodiment of a high sensitivity pressure sensor of the present invention;
FIG. 3 is a schematic diagram showing the result of step A of the method for manufacturing a high-sensitivity pressure sensor according to the present invention;
FIG. 4 is a schematic diagram showing the result of step B of the method for manufacturing a high-sensitivity pressure sensor according to the present invention;
FIG. 5 is a schematic diagram showing the result of step D in the method of fabricating a high sensitivity pressure sensor according to the present invention;
FIG. 6 is a schematic diagram showing the result of step E of the method of the present invention for fabricating a high sensitivity pressure sensor;
FIG. 7 is a graph showing the result of step F of the method of the present invention for fabricating a high sensitivity pressure sensor;
FIG. 8 is a schematic diagram showing the result of step H in the method of fabricating a high sensitivity pressure sensor according to the present invention;
FIG. 9 is a schematic diagram showing the result of step I of the method of the present invention for fabricating a high sensitivity pressure sensor;
FIG. 10 is a graph showing the result of step J of the method of the present invention for fabricating a high sensitivity pressure sensor;
FIG. 11 is a schematic diagram of the stress distribution in the lead direction in an implementation of a high sensitivity pressure sensor designed according to the present invention.
The piezoelectric ceramic chip comprises a box body 1, a partition plate 2, a substrate 3, a piezoresistor 4, a sunken cavity 5, a lead 6, a bonding pad 7, a first silicon chip 8, an oxide layer 9, a second silicon chip 10, an insulating layer 11 and a metal material 12.
Detailed Description
the following description will explain embodiments of the present invention in further detail with reference to the accompanying drawings.
the invention designs a high-sensitivity pressure sensor, which comprises a box body 1, a partition plate 2, a substrate 3 and four piezoresistive bodies 4 in practical application as shown in figures 1 and 2; wherein, the top surface of the box body 1 is provided with a concave cavity 5, and the clapboard 2 is fixedly arranged on the periphery of the edge of the concave cavity 5 on the top surface of the box body 1; the substrate 3 is a polygonal ring structure, all parts of the substrate 3 are coplanar, the substrate 3 is fixedly arranged on the upper surface of the partition board 2, the position of the middle area of the polygonal ring structure of the substrate 3 corresponds to the position of the concave cavity 5 on the top surface of the box body 1, and the interior of the concave cavity 5 on the top surface of the box body 1 is in a vacuum state.
the four piezoresistive bodies 4 have the same structure, each piezoresistive body 4 comprises at least two piezoresistive strips, and the lengths of the piezoresistive strips are equal to each other; in each piezoresistive body 4, each piezoresistive strip is parallel and coplanar, adjacent piezoresistive strips are connected in series to form a curve structure, a straight line which is parallel to the piezoresistive strips and passes through the middle position between the outermost piezoresistive strips at two sides is taken as an axis, and the curve structure is axisymmetric.
Two ends of the curve structure of each piezoresistive body 4 are fixedly connected with the inner side edge of the polygonal annular structure of the substrate 3 through a conducting wire 6 respectively, each piezoresistive body 4 and each conducting wire 6 are positioned in the middle area of the polygonal annular structure of the substrate 3, and each piezoresistive body 4 and each conducting wire 6 are fixed on the upper surface of the partition plate 2; the surfaces of the piezoresistive bodies 4 are coplanar, the straight lines parallel to the symmetry axis of the piezoresistive strips on the piezoresistive bodies 4 are collinear, the collinear lines pass through the middle points of the two opposite inner side edges of the polygonal annular structure of the substrate 3, and the adjacent piezoresistive bodies 4 are axisymmetric.
in the design of an actual product, the box body 1, the partition plate 2 and the substrate 3 are all made of silicon materials, and each piezoresistive strip and each lead 6 are formed by ion implantation aiming at the silicon materials; the substrate 3 is a rectangular ring structure, two ends of the curve structure of each piezoresistive body 4 are respectively connected with two opposite inner side edges of the rectangular ring structure of the substrate 3 through a conducting wire 6 and a fixed butt joint, and the integral structure of each piezoresistive body 4 and the conducting wires 6 connected with the two ends of the piezoresistive body is axisymmetric with the symmetrical axis parallel to the piezoresistive strips.
The upper surface of the substrate 3 is provided with each bonding pad 7 respectively connected with each lead 6, and power is supplied to each piezoresistive body 4 through each lead 6 by supplying power to each bonding pad 7, wherein two piezoresistive bodies 4 on two sides bear compressive stress, and two piezoresistive bodies 4 in the middle bear tensile stress.
Based on the above technical solution, the high-sensitivity pressure sensor shown in fig. 1 or fig. 2 is finally constructed.
Aiming at the high-sensitivity pressure sensor designed by the technical scheme, the invention further designs a manufacturing method of the high-sensitivity pressure sensor, and in practical application, the high-sensitivity pressure sensor is manufactured by specifically using two silicon wafers.
step a, polishing and then oxidizing the upper surface of the first silicon wafer 8 to obtain an oxide layer 9 on the upper surface of the first silicon wafer 8, as shown in fig. 3.
And step B, patterning the oxide layer 9 on the upper surface of the first silicon wafer 8, and etching to obtain a concave cavity 5 on the upper surface of the first silicon wafer 8, as shown in FIG. 4.
and step C, polishing the lower surface of the second silicon wafer 10, and then performing oxidation treatment to obtain an oxidation layer 9 positioned on the lower surface of the second silicon wafer 10.
And step D, bonding the oxide layer 9 on the lower surface of the second silicon wafer 10 with the upper surface of the first silicon wafer 8 in a vacuum environment, and covering the concave cavity 5 on the upper surface of the first silicon wafer 8 by the second silicon wafer 10, as shown in FIG. 5.
step e, performing thinning processing on the upper surface of the second silicon wafer 10 to a preset thickness, and then performing oxidation processing on the upper surface of the second silicon wafer 10 to obtain an oxide layer 9 on the upper surface of the second silicon wafer 10, as shown in fig. 6.
And F, patterning the oxide layer 9 on the upper surface of the second silicon wafer 10, and etching the oxide layer 9 to obtain injection ports corresponding to the pressure strips and the leads 6 respectively, as shown in FIG. 7.
and G, respectively carrying out ion implantation on each injection hole on the oxide layer 9 on the upper surface of the second silicon wafer 10, and respectively forming each piezoresistive strip and each lead 6 by each ion implantation position.
And H, patterning the upper surface of the second silicon wafer 10, and etching the surrounding area of each pressure barrier and each lead wire 6 to a preset thickness, wherein the etching depth is higher than the lower bottom surface of the second silicon wafer 10, so as to form the substrate 3 with the polygonal ring structure surrounding each pressure barrier and each lead wire 6, as shown in FIG. 8.
Step i, depositing an insulating layer 11 on the surface of each piezoresistive strip, the surface of each conductive line 6, and the middle region of the polygonal ring structure of the substrate 3, as shown in fig. 9.
And step J, patterning the oxide layer on the upper surface of the second silicon wafer 10, windowing, and depositing a metal material 12 to form each bonding pad 7, as shown in FIG. 10.
In a specific practical application, if the pressure sensor is a differential pressure sensor, the method further comprises a step K, and after the step J is executed, the method enters the step K.
and K, patterning the lower surface of the first silicon chip 8 to form a hollow structure of the lower surface of the first silicon chip 8.
In the practical application, the high-sensitivity pressure sensor is obtained by adopting a brand-new integrated design process and etching a series of operations, a stress concentration area can be formed, the linearity is ensured, and the sensitivity of pressure detection is improved, wherein 4 sensitive resistors are formed by longitudinally arranging four piezoresistive bodies 4 to form a Wheatstone bridge, two of the edges bear compressive stress, and two of the middle bear tensile stress.
and in a specific practical implementation, as shown in fig. 11, the stress distribution of the lead in the X direction is under pressure. Since the stress in this direction has tensile stress and compressive stress, the resistance changes caused by the stress are mostly cancelled out, and the influence of the residual part on the sensitivity is negligible.
the embodiments of the present invention have been described in detail with reference to the drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the gist of the present invention.
Claims (6)
1. a high sensitivity pressure sensor, characterized by: comprises a box body (1), a clapboard (2), a substrate (3) and four piezoresistive bodies (4); wherein, the top surface of the box body (1) is provided with a concave cavity (5), and the clapboard (2) is fixedly arranged on the periphery of the edge of the concave cavity (5) on the top surface of the box body (1); the substrate (3) is of a polygonal annular structure, all parts of the substrate (3) are coplanar, the substrate (3) is fixedly arranged on the upper surface of the partition plate (2), the position of the middle area of the polygonal annular structure of the substrate (3) corresponds to the position of the concave cavity (5) on the top surface of the box body (1), and the interior of the concave cavity (5) on the top surface of the box body (1) is in a vacuum state;
the four piezoresistive bodies (4) have the same structure, each piezoresistive body (4) comprises at least two piezoresistive strips, and the lengths of the piezoresistive strips are equal to each other; in each piezoresistive body (4), each piezoresistive strip is parallel and coplanar, adjacent piezoresistive strips are connected in series to form a curve structure, a straight line which is parallel to the piezoresistive strips and passes through the middle position between the outermost piezoresistive strips at two sides is taken as an axis, and the curve structure is axisymmetric;
Two ends of the curve structure of each piezoresistive body (4) are fixedly butted with the inner side edge of the polygonal annular structure of the substrate (3) through a conducting wire (6), each piezoresistive body (4) and each conducting wire (6) are positioned in the middle area of the polygonal annular structure of the substrate (3), and each piezoresistive body (4) and each conducting wire (6) are fixed on the upper surface of the partition plate (2); the surfaces of the piezoresistive bodies (4) are coplanar, the straight lines on the piezoresistive bodies (4) parallel to the symmetry axis of the piezoresistive strips are collinear, the collinear lines pass through the middle points of two opposite inner side edges of the polygonal annular structure of the substrate (3), and the adjacent piezoresistive bodies (4) are axisymmetric;
the upper surface of the substrate (3) is provided with each bonding pad (7) which is respectively connected with each lead (6), and power is supplied to each bonding pad (7) and each piezoresistive body (4) through the leads (6), wherein two piezoresistive bodies (4) on two sides bear compressive stress, and two piezoresistive bodies (4) in the middle bear tensile stress.
2. A high sensitivity pressure sensor as claimed in claim 1, wherein: the substrate (3) is of a rectangular annular structure, two ends of the curve structure of each piezoresistive body (4) are fixedly connected with two opposite inner side edges of the rectangular annular structure of the substrate (3) through a conducting wire (6), and the integral structure of each piezoresistive body (4) and the conducting wires (6) connected with the two ends of the piezoresistive body is axisymmetric with a symmetry axis parallel to the piezoresistive strips.
3. A high sensitivity pressure sensor as claimed in claim 1, wherein: the box body (1), the partition plate (2) and the substrate (3) are all made of silicon materials, and each piezoresistive strip and each lead (6) are formed by ion implantation of the silicon materials.
4. a method for manufacturing a high-sensitivity pressure sensor according to any one of claims 1 to 3, wherein two silicon wafers are used to realize the manufacture of the high-sensitivity pressure sensor, comprising the following steps:
Step A, carrying out oxidation treatment on the upper surface of a first silicon wafer (8) to obtain an oxidation layer (9) positioned on the upper surface of the first silicon wafer (8);
B, patterning an oxide layer (9) on the upper surface of the first silicon wafer (8), and etching to obtain a recessed cavity (5) on the upper surface of the first silicon wafer (8);
C, carrying out oxidation treatment on the lower surface of the second silicon wafer (10) to obtain an oxidation layer (9) positioned on the lower surface of the second silicon wafer (10);
Step D, bonding the oxide layer (9) on the lower surface of the second silicon wafer (10) with the upper surface of the first silicon wafer (8) in a vacuum environment, and covering the sunken cavity (5) on the upper surface of the first silicon wafer (8) by the second silicon wafer (10);
E, thinning the second silicon wafer (10) to a preset thickness from the upper surface of the second silicon wafer (10), and then oxidizing the upper surface of the second silicon wafer (10) to obtain an oxide layer (9) on the upper surface of the second silicon wafer (10);
f, patterning the oxide layer (9) on the upper surface of the second silicon wafer (10), and etching the oxide layer (9) to obtain injection ports respectively corresponding to each pressure barrier strip and each lead (6);
g, respectively injecting ions into each injection hole on the oxide layer (9) on the upper surface of the second silicon wafer (10), and respectively forming each pressure barrier and each lead (6) by each ion injection position;
Step H, patterning the upper surface of the second silicon wafer (10), and etching the surrounding areas of each pressure barrier strip and each lead (6) to a preset thickness, wherein the etching depth is higher than the lower bottom surface of the second silicon wafer (10), so that a substrate (3) with a polygonal annular structure surrounding each pressure barrier strip and each lead (6) is formed;
I, depositing an insulating layer (11) aiming at the surfaces of the pressure resistance strips, the surfaces of the leads (6) and the middle area of the polygonal annular structure of the substrate (3);
And J, patterning the oxide layer on the upper surface of the second silicon wafer (10), windowing, and depositing a metal material (12) to form each bonding pad (7).
5. The method of claim 4, wherein the method further comprises: in the step A, polishing treatment is firstly carried out on the upper surface of the first silicon wafer (8), and then oxidation treatment is carried out; and in the step C, polishing treatment is firstly carried out on the lower surface of the second silicon wafer (10), and then oxidation treatment is carried out.
6. the method of claim 4, wherein the method further comprises: if the pressure sensor is a differential pressure sensor, the method also comprises a step K, and after the step J is executed, the step K is executed;
and K, patterning the lower surface of the first silicon chip (8) to form a hollow structure of the lower surface of the first silicon chip (8).
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