CN105004457A - Monocrystalline silicon pressure sensor chip capable of improving working performance - Google Patents

Monocrystalline silicon pressure sensor chip capable of improving working performance Download PDF

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Publication number
CN105004457A
CN105004457A CN201510421947.4A CN201510421947A CN105004457A CN 105004457 A CN105004457 A CN 105004457A CN 201510421947 A CN201510421947 A CN 201510421947A CN 105004457 A CN105004457 A CN 105004457A
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vdr
dependent resistor
voltage dependent
monocrystalline silicon
thin film
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CN201510421947.4A
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CN105004457B (en
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牟恒
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JIANGSU DER SENSOR HOLDINGS Ltd.
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Gloomy Sensor Science And Technology Ltd Of Jiangsu Dare
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Abstract

The invention discloses a monocrystalline silicon pressure sensor chip capable of improving the working performance. The monocrystalline silicon pressure sensor chip comprises a substrate, a monocrystalline silicon layer is arranged on the substrate, the monocrystalline silicon layer is formed by a monocrystalline silicon thin film arranged on the substrate and a vacuum cavity formed between the monocrystalline silicon thin film and the substrate, the cross sections of the vacuum cavity at any position in the vertical direction are trapezoid structures, and arc connection sections are arranged between side end surfaces and the upper end surface of the vacuum cavity. By adopting the technical scheme, according to the monocrystalline silicon pressure sensor chip capable of improving the working performance, the inner part of the monocrystalline silicon pressure sensor chip forms an arc-angle trapezoid structure via the arc connection sections in the vacuum cavity, the anti-overvoltage ability of the sensor chip is improved, and the overvoltage performance of the sensor chip in the high-voltage state is substantially improved compared with the conventional chip with the same measuring range.

Description

The monocrystalline-silicon pressure transducer chip of serviceability can be improved
Technical field
The present invention relates to semiconductor applications, especially a kind of monocrystalline-silicon pressure transducer chip improving serviceability.
Background technology
Pressure transducer has become one of requisite electronic devices and components of numerous areas such as commercial production, Smart Home, environmental protection, and in pressure sensor, the chip of pressure transducer directly determines the serviceability of pressure transducer.Existing pressure sensor chip is usually by measuring pressure to the impact of the resistance in chip and then the detection realizing pressure, but existing chip structure is difficult to the work requirements meeting extreme environment, and namely its overvoltage performance is unsatisfactory.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of monocrystalline-silicon pressure transducer chip, and it significantly can improve overvoltage characteristic and the Static compression performance of sensor chip.
For solving the problems of the technologies described above, the present invention relates to a kind of monocrystalline-silicon pressure transducer chip improving serviceability, it includes substrate, and substrate is provided with monocrystalline silicon layer; Described monocrystalline silicon layer is by the monocrystalline silicon thin film being arranged on types of flexure, and the vacuum chamber formed between monocrystalline silicon thin film and substrate is formed.Cross section on described vacuum chamber vertical direction is at an arbitrary position trapezium structure, is provided with arc linkage section between the side end face of vacuum chamber and upper surface.
As a modification of the present invention, the upper surface of described monocrystalline silicon thin film is provided with the Wheatstone bridge comprising the first voltage dependent resistor (VDR), the second voltage dependent resistor (VDR), the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR); Multiple voltage dependent resistor (VDR) has included pressure-sensitive end, and two links extended by pressure-sensitive end; Metal lead wire by being connected to link between multiple voltage dependent resistor (VDR) connects each other, and described first voltage dependent resistor (VDR), the second voltage dependent resistor (VDR), the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) are set to Rotational Symmetry about the centre bit of monocrystalline silicon thin film.
Adopt above-mentioned design, it is by the rotation symmetric design between multiple voltage dependent resistor (VDR), the symmetry of the distribution of resistance in the Wheatstone bridge that it is formed is improved, thus effective resistance of Wheatstone bridge is raised, and then the stability of monocrystalline-silicon pressure transducer chip and static pressure performance are improved.
As a modification of the present invention, in described monocrystalline silicon thin film, the pressure-sensitive end of the first voltage dependent resistor (VDR), the second voltage dependent resistor (VDR), the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) is set in turn in the end Angle Position of monocrystalline silicon thin film upper surface, the bearing of trend of two links in each voltage dependent resistor (VDR) is all parallel to the diagonal line of monocrystalline silicon thin film, and it all extends towards the central area of monocrystalline silicon thin film.Adopt above-mentioned design, it is by the vibrational power flow of the link in multiple voltage dependent resistor (VDR), make it while realization is mutually symmetrical design, multiple voltage dependent resistor (VDR) is made to form the mirrored arrangement of " X " shape in monocrystalline silicon thin film upper surface, thus make resistance be able to further improvement relative to the symmetry of monocrystalline silicon thin film, thus the stability of monocrystalline-silicon pressure transducer chip and static pressure performance also can be improved.
As a modification of the present invention, be communicated with by the metal lead wire be connected between above-mentioned two voltage dependent resistor (VDR)s link adjacent one another are respectively between any two adjacent voltage dependent resistor (VDR)s, it makes the connection line between multiple voltage dependent resistor (VDR) also meet its symmetric configuration, and connection line is simplified, can promote to make the job stability of sensor chip.
Adopt the monocrystalline-silicon pressure transducer chip of the serviceability improved of technique scheme, it is by the arc linkage section in vacuum chamber, above-mentioned monocrystalline-silicon pressure transducer chip internal is made to form arc angle trapezium structure, thus the anti-overvoltage capabilities of sensor chip is improved, under making identical range, sensor chip overvoltage performance in a high voltage state is comparatively significantly improved in conventional die tool.
Accompanying drawing explanation
Fig. 1 is schematic diagram of the present invention;
Fig. 2 is Wheatstone bridge schematic diagram in the present invention;
Reference numerals list:
1-substrate, 2-monocrystalline silicon thin film, 3-vacuum chamber, 4-arc linkage section, the 51-the first voltage dependent resistor (VDR), the 52-the second voltage dependent resistor (VDR), the 53-the three voltage dependent resistor (VDR), the 54-the four voltage dependent resistor (VDR), 6-pressure-sensitive end, 7-link, 8-metal lead wire.
Embodiment
Below in conjunction with embodiment, illustrate the present invention further, following embodiment should be understood and be only not used in for illustration of the present invention and limit the scope of the invention.It should be noted that, the word "front", "rear" of use is described below, "left", "right", "up" and "down" refer to direction in accompanying drawing, word " interior " and " outward " refer to the direction towards or away from particular elements geometric center respectively.
Embodiment 1
A kind of monocrystalline-silicon pressure transducer chip improving serviceability as shown in Figure 1, it includes substrate 1, and substrate is provided with monocrystalline silicon layer; Described monocrystalline silicon layer is by the monocrystalline silicon thin film 2 being arranged on types of flexure, and the vacuum chamber 3 formed between monocrystalline silicon thin film 2 and substrate 1 is formed.Cross section on described vacuum chamber 3 vertical direction is at an arbitrary position trapezium structure, is provided with arc linkage section 4 between the side end face of vacuum chamber 3 and upper surface.
As a modification of the present invention, as shown in Figure 2, the upper surface of described monocrystalline silicon thin film 2 is provided with the Wheatstone bridge comprising the first voltage dependent resistor (VDR) 51, second voltage dependent resistor (VDR) 52, the 3rd voltage dependent resistor (VDR) 53 and the 4th voltage dependent resistor (VDR) 54; Multiple voltage dependent resistor (VDR) has included pressure-sensitive end 6, and two links 7 extended by pressure-sensitive end 6; Metal lead wire 8 by being connected to link 7 between multiple voltage dependent resistor (VDR) connects each other, and described first voltage dependent resistor (VDR) 51, second voltage dependent resistor (VDR) 52, the 3rd voltage dependent resistor (VDR) 53 and the 4th voltage dependent resistor (VDR) 54 are set to Rotational Symmetry about the centre bit of monocrystalline silicon thin film 2.
Adopt above-mentioned design, it is by the rotation symmetric design between multiple voltage dependent resistor (VDR), the symmetry of the distribution of resistance in the Wheatstone bridge that it is formed is improved, thus effective resistance of Wheatstone bridge is raised, and then the stability of monocrystalline-silicon pressure transducer chip and static pressure performance are improved.
Adopt the monocrystalline-silicon pressure transducer chip of the serviceability improved of technique scheme, it is by the arc linkage section in vacuum chamber, above-mentioned monocrystalline-silicon pressure transducer chip internal is made to form arc angle trapezium structure, thus the anti-overvoltage capabilities of sensor chip is improved, under making identical range, sensor chip overvoltage performance in a high voltage state is comparatively significantly improved in conventional die tool.
Embodiment 2
As a modification of the present invention, in described monocrystalline silicon thin film 2, the pressure-sensitive end 6 of the first voltage dependent resistor (VDR) 51, second voltage dependent resistor (VDR) 52, the 3rd voltage dependent resistor (VDR) 53 and the 4th voltage dependent resistor (VDR) 54 is set in turn in the end Angle Position of monocrystalline silicon thin film 2 upper surface, the bearing of trend of two links 7 in each voltage dependent resistor (VDR) is all parallel to the diagonal line of monocrystalline silicon thin film 2, and it all extends towards the central area of monocrystalline silicon thin film 2.Adopt above-mentioned design, it is by the vibrational power flow of the link in multiple voltage dependent resistor (VDR), make it while realization is mutually symmetrical design, multiple voltage dependent resistor (VDR) is made to form the mirrored arrangement of " X " shape in monocrystalline silicon thin film upper surface, thus make resistance be able to further improvement relative to the symmetry of monocrystalline silicon thin film, thus the stability of monocrystalline-silicon pressure transducer chip and static pressure performance also can be improved.
All the other feature & benefits of the present embodiment are all identical with embodiment 1.
Embodiment 3
As a modification of the present invention, be communicated with by the metal lead wire 8 be connected between above-mentioned two voltage dependent resistor (VDR)s link 7 adjacent one another are respectively between any two adjacent voltage dependent resistor (VDR)s, it makes the connection line between multiple voltage dependent resistor (VDR) also meet its symmetric configuration, and connection line is simplified, can promote to make the job stability of sensor chip.
All the other feature & benefits of the present embodiment are all identical with embodiment 2.

Claims (4)

1. can improve a monocrystalline-silicon pressure transducer chip for serviceability, it includes substrate, and substrate is provided with monocrystalline silicon layer; Described monocrystalline silicon layer is by the monocrystalline silicon thin film being arranged on types of flexure, and the vacuum chamber formed between monocrystalline silicon thin film and substrate is formed; It is characterized in that, the cross section on described vacuum chamber vertical direction is at an arbitrary position trapezium structure, is provided with arc linkage section between the side end face of vacuum chamber and upper surface.
2. according to the monocrystalline-silicon pressure transducer chip improving serviceability according to claim 1, it is characterized in that, the upper surface of described monocrystalline silicon thin film is provided with the Wheatstone bridge comprising the first voltage dependent resistor (VDR), the second voltage dependent resistor (VDR), the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR);
Multiple voltage dependent resistor (VDR) has included pressure-sensitive end, and two links extended by pressure-sensitive end; Metal lead wire by being connected to link between multiple voltage dependent resistor (VDR) connects each other, and described first voltage dependent resistor (VDR), the second voltage dependent resistor (VDR), the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) are set to Rotational Symmetry about the centre bit of monocrystalline silicon thin film.
3. according to the monocrystalline-silicon pressure transducer chip improving serviceability according to claim 2, it is characterized in that, in described monocrystalline silicon thin film, the pressure-sensitive end of the first voltage dependent resistor (VDR), the second voltage dependent resistor (VDR), the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) is set in turn in the end Angle Position of monocrystalline silicon thin film upper surface, the bearing of trend of two links in each voltage dependent resistor (VDR) is all parallel to the diagonal line of monocrystalline silicon thin film, and it all extends towards the central area of monocrystalline silicon thin film.
4. according to the monocrystalline-silicon pressure transducer chip improving serviceability according to claim 3, it is characterized in that, be communicated with by the metal lead wire be connected between above-mentioned two voltage dependent resistor (VDR)s link adjacent one another are respectively between any two adjacent voltage dependent resistor (VDR)s.
CN201510421947.4A 2015-07-19 2015-07-19 The monocrystalline-silicon pressure transducer chip of service behaviour can be improved Active CN105004457B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105547533A (en) * 2015-12-09 2016-05-04 北京大学 Pressure gauge chip structure and preparation method thereof
CN105928587A (en) * 2016-06-25 2016-09-07 苏州赛智达智能科技有限公司 High-precision digital liquid level meter

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1049718A (en) * 1989-08-25 1991-03-06 株式会社长野计器制作所 Strain test element and use its pressure converter
CN101034021A (en) * 2007-03-02 2007-09-12 清华大学 Wide stress area silicon pressure sensor
CN101776501A (en) * 2010-01-28 2010-07-14 无锡市纳微电子有限公司 MEMS presser sensor chip and manufacturing method thereof
CN202267554U (en) * 2011-10-20 2012-06-06 刘胜 Silicon piezoresistive type pressure sensor chip with shielding layer
CN103443605A (en) * 2011-02-25 2013-12-11 大陆汽车系统公司 Robust design of high pressure sensor device
CN203519215U (en) * 2013-09-16 2014-04-02 沈阳仪表科学研究院有限公司 High power overload 1KPa silicon micropressure sensor chip composition
CN104697701A (en) * 2015-03-16 2015-06-10 东南大学 Piezoresistive pressure sensor
CN204831655U (en) * 2015-07-19 2015-12-02 江苏德尔森传感器科技有限公司 Can improve monocrystalline silicon pressure sensor chip of working property

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1049718A (en) * 1989-08-25 1991-03-06 株式会社长野计器制作所 Strain test element and use its pressure converter
CN101034021A (en) * 2007-03-02 2007-09-12 清华大学 Wide stress area silicon pressure sensor
CN101776501A (en) * 2010-01-28 2010-07-14 无锡市纳微电子有限公司 MEMS presser sensor chip and manufacturing method thereof
CN103443605A (en) * 2011-02-25 2013-12-11 大陆汽车系统公司 Robust design of high pressure sensor device
CN202267554U (en) * 2011-10-20 2012-06-06 刘胜 Silicon piezoresistive type pressure sensor chip with shielding layer
CN203519215U (en) * 2013-09-16 2014-04-02 沈阳仪表科学研究院有限公司 High power overload 1KPa silicon micropressure sensor chip composition
CN104697701A (en) * 2015-03-16 2015-06-10 东南大学 Piezoresistive pressure sensor
CN204831655U (en) * 2015-07-19 2015-12-02 江苏德尔森传感器科技有限公司 Can improve monocrystalline silicon pressure sensor chip of working property

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105547533A (en) * 2015-12-09 2016-05-04 北京大学 Pressure gauge chip structure and preparation method thereof
CN105928587A (en) * 2016-06-25 2016-09-07 苏州赛智达智能科技有限公司 High-precision digital liquid level meter

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