CN104776951A - Piezoresistive MEMS (micro-electromechanical system) pressure sensor and preparation method thereof - Google Patents
Piezoresistive MEMS (micro-electromechanical system) pressure sensor and preparation method thereof Download PDFInfo
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Abstract
The invention relates to a piezoresistive MEMS (micro-electromechanical system) pressure sensor and a preparation method thereof. The sensor comprises a monocrystalline silicon wafer substrate, a first insulation layer, a monocrystalline silicon wafer pressure film, a second insulation layer, graphical metal leads and a third insulation layer which are sequentially arranged from bottom to top, wherein a groove is formed in the upper surface of the monocrystalline silicon wafer substrate, four piezoresistive strips are formed on the upper surface of the monocrystalline silicon wafer pressure film through light boron doping, are pairwise symmetrically arranged in the circumferential direction, adopt the P type, are distributed on inner sides of edges of a corresponding area of the groove and are connected in an end-to-end manner by the graphical metal leads via electrical contact holes, and four electrode holes for allowing routing of the graphical metal leads with the outside are formed in the third insulation layer. The sensor has the advantages of simple structure, low cost and stable performance, the preparation method of the sensor is simple in technology and high in yield, and batch production can be realized.
Description
Technical field
The present invention relates to a kind of gas pressure detection unit, especially relate to a kind of MEMS Piezoresistive Pressure Sensor being applied to MEMS (micro electro mechanical system), and the preparation method of sensor.
Background technology
At brake system, engine system, the tire pressure monitoring system of automobile, with by technical fields such as other industrial gasses Stress control and the controls of domestic gas pressure monitoring, gas pressure sensor has a wide range of applications.In these areas, mostly adopt medium range baroceptor, the air pressure range of monitoring is usually between 500kPa ~ 10MPa.Along with the development of MEMS (MEMS), the technical development of sensor has tended to mass, microminiaturization, and just because of the advantage of the MEMS body silicon manufacturing technology of mass, miniature MEMS sensor instead of traditional sensor.
Pressure transducer can be divided into absolute pressure formula and gauge pressure formula two kinds according to its zero-base difference on schedule.In medium range gas pressure detection field, absolute pressure formula MEMS pressure sensor can be divided into again capacitive MEMS pressure transducer and MEMS Piezoresistive Pressure Sensor two kinds based on its measuring principle.Capacitive MEMS pressure transducer one of them pole plate using pressure membrane as electric capacity, when pressure membrane deforms along with external pressure time, distance on electric capacity between bottom crown can change thereupon thus cause output capacitance to change, and reflects air pressure by capacitance variations.Capacitive MEMS pressure transducer Detection capacitance needs to utilize AC signal, and the circuit of processing signals is comparatively complicated, and makes the sensor cost after encapsulating also higher.MEMS Piezoresistive Pressure Sensor mainly make use of the piezoresistive effect of silicon crystal, causes doped resistor to change by the distortion of pressure membrane, can reflect corresponding air pressure by the change of resistance.The change that MEMS Piezoresistive Pressure Sensor detects resistance only just need can realize detection signal output by simple Wheatstone bridge, circuit structure is comparatively simple, meanwhile, MEMS Piezoresistive Pressure Sensor can utilize the MEMS technology of mass to make, and has the advantage of mass, high finished product.
But have that cost is high based on the MEMS pressure sensor of piezoresistive principles in prior art, under hot conditions pressure drag bar easily and silicon substrate occur to leak electricity thus affect the technological deficiency of stability, as Chinese invention patent CN200880007360 and CN201210340683, the product of these two patents all adopts soi wafer as the substrate material of pressure sensor chip, compares and uses common monocrystalline silicon piece higher as pressure sensor chip cost; And technical scheme disclosed in US Patent No. 006006607A and US006543292B1, although have employed the substrate material of common monocrystalline silicon piece as pressure sensor chip, thus the manufacturing cost of its product is minimized, but it just utilizes light boron doping process to make pressure drag on monocrystalline silicon piece simply, the electrical insulation performance of pressure drag is lower, particularly under the high temperature conditions pressure drag bar easily and silicon substrate leak electricity, greatly reduce the stability of sensor.
Summary of the invention
The object of this invention is to provide a kind of MEMS Piezoresistive Pressure Sensor and preparation method thereof, sensor has that structure is simple, with low cost, the advantage of stable performance, and its preparation method technique is simple, yield rate is high, and can realize mass production.
High for solving the cost that in prior art, traditional MEMS Piezoresistive Pressure Sensor exists, under the high temperature conditions pressure drag bar easily and silicon substrate occur to leak electricity thus affect the technological deficiency of stability, a kind of MEMS Piezoresistive Pressure Sensor of the present invention comprises monocrystalline silicon piece substrate, monocrystalline silicon piece pressure membrane, pressure drag article, patterned metal lead-in wire, the first insulation course, the second insulation course, the 3rd insulation course, and monocrystalline silicon piece substrate, the first insulation course, monocrystalline silicon piece pressure membrane, the second insulation course, patterned metal go between, the position of the 3rd insulation course sets gradually from the bottom to top; The upper surface of monocrystalline silicon piece substrate offers groove, the first insulation course offers identical with the shape of groove and that position is corresponding through hole; Pressure drag bar is formed and is circumferentially symmetrical arranged four between two at upper surface by light boron doping by monocrystalline silicon piece pressure membrane, four pressure drag bars are P type and are distributed in inside the edge of groove corresponding region, position corresponding with each pressure drag bar two ends on second insulation course all offers electricity contact hole, and patterned metal lead-in wire makes four pressure drag bars realize joining end to end by electricity contact hole; 3rd insulation course offers four for patterned metal lead-in wire and the outside electrode hole carrying out routing.
Preferably, the shape of groove is rectangle or circle, to arrange along stress direction inside about two in four the pressure drag bars lower edges being symmetrically distributed in groove corresponding region, arrange along perpendicular stress direction inside the symmetrical left and right edges being distributed in groove corresponding region of another two pressure drag bars.
Preferably, each pressure drag bar is all set to four sections of distributing side by side and connects as a whole by patterned metal lead-in wire, the upper surface of monocrystalline silicon piece pressure membrane is also provided with the isolation strip formed by dense phosphorus doping, and four sections in each pressure drag bar all spaced by isolation strip.
Preferably, in each pressure drag bar, the two ends of each section are equipped with the electricity contact formed by dense boron doping, and in each pressure drag bar, the two ends of each section are gone between with patterned metal by electricity contact and are connected.
Alternatively, the material of patterned metal lead-in wire is Al, Au, Cu, Ni, Ag, Pt or the alloy with conduction property.
Alternatively, the material of the first insulation course, the second insulation course, the 3rd insulation course is the composite membrane with the silicon dioxide of insulating property (properties), silicon nitride, organic film or silicon dioxide and silicon nitride, and the thickness of the first insulation course, the second insulation course, the 3rd insulation course is 1nm ~ 100 μm.
Present invention also offers a kind of method preparing MEMS Piezoresistive Pressure Sensor, comprise the following steps,
One, monocrystalline silicon piece substrate and monocrystalline silicon piece pressure membrane is prepared;
Two, utilize MEMS thin film deposition processes in monocrystalline silicon piece substrate, deposit formation first insulation course, the thickness of the first insulation course is made to be 1nm ~ 100 μm, and on the first insulation course, output rectangular opening or circular port by etching technics, corresponding rectangular recess or circular groove are outputed in monocrystalline silicon piece substrate;
Three, utilize bonding technology monocrystalline silicon piece pressure membrane to be bonded on the first insulation course, and monocrystalline silicon piece pressure membrane is worked into the thickness of needs;
Four, utilize light boron doping process that pressure drag bar is set in monocrystalline silicon piece pressure membrane;
Five, utilize MEMS thin film deposition processes in monocrystalline silicon piece pressure membrane, deposit formation second insulation course, the thickness making the second insulation course is 1nm ~ 100 μm, and utilizes etching technics to output the end points electricity contact hole of pressure drag bar over the second dielectric;
Six, utilize MEMS deposit metal films technique to deposit formation metallic film over the second dielectric, and form patterned metal lead-in wire by patterning process;
Seven, last layer deposition formation the 3rd insulation course that MEMS thin film deposition processes goes between at patterned metal is utilized, the thickness making the 3rd insulation course is 1nm ~ 100 μm, and utilizes etching technics on the 3rd insulation course, output four patterned metal lead-in wires and the outside electrode hole carrying out routing.
Preferably, also comprise in above-mentioned steps four and utilize dense phosphorus doping technique the operation of isolation strip is set and utilizes dense boron doping process that the operation of electricity contact is set, isolation strip is by all spaced for four sections in each pressure drag bar, every section of two ends in each pressure drag bar are equipped with electricity contact, electricity contact for strengthen pressure drag bar and patterned metal go between ohmic contact characteristic.
Alternatively, the MEMS thin film deposition processes in above-mentioned steps two, step 5 and step 7 is oxidation technology, low-pressure chemical vapor deposition (LPCVD) technique, plasma reinforced chemical vapour deposition (PECVD) technique, sol gel process or organic material coating curing process.
Alternatively, the etching technics in above-mentioned steps two, step 5 and step 7 is dry ionic etching technics, XeF gaseous corrosion technique, wet anisotropic etching process, wet method isotropic etch technique, focused-ion-beam lithography (FIB) technique or laser etching process.
Alternatively, the bonding technology in above-mentioned steps three is silicon silicon thermal bonding technique, is coated with source bonding technology, organic gel bonding technology, inter-metallic bond technique or glass paste bonding technology.
Alternatively, the MEMS deposit metal films technique in above-mentioned steps six is sputtering sedimentation skill, electron-beam evaporation technique, heating evaporation depositing operation, electroplating deposition technique, electroless deposition technique or chemical replacement reaction process.
Alternatively, the doping process in above-mentioned steps four is ion implantation doping process or the source of painting diffusing, doping technique.
Compared with traditional piezoresistive pressure sensor, the present invention has the following advantages: (1) the present invention utilize metal film and patterned metal lead-in wire all electricity that alternative traditional dense boron doping realizes sensor internal connect, thus avoid the doping of dense boron make under the high temperature conditions pressure drag bar easily and silicon base there is the defect of leaking electricity, improve the electrical stability of pressure transducer; (2) as further prioritization scheme, the present invention also forms isolation strip by increasing dense phosphorus doping technique around the pressure drag bar of light boron doping formation, make each section of pressure drag bar spaced, and in use raise the current potential in dense phosphorus doping region, further enhancing the PN junction insulating property between pressure drag bar and silicon base, considerably improve the stability of sensor; (3) the present invention also utilizes dense boron doping process to arrange electricity contact at the two ends of every section of pressure drag bar, enhance pressure drag bar and patterned metal go between ohmic contact characteristic.The improvement of said structure not only can improve performance and the stability of sensor effectively, and its preparation technology and traditional cmos process are compatible, have structure simple, implement convenience, technical maturity, advantage with low cost, and can mass production be realized.
Below in conjunction with embodiment shown in accompanying drawing, a kind of MEMS Piezoresistive Pressure Sensor of the present invention and preparation method thereof is described in further detail:
Accompanying drawing explanation
Fig. 1 is the inner structure schematic diagram of a kind of the first embodiment of MEMS Piezoresistive Pressure Sensor of the present invention;
Fig. 2 is the A-A schematic cross-section in Fig. 1;
Fig. 3 is the B-B schematic cross-section in Fig. 1;
Fig. 4 is the C-C schematic cross-section in Fig. 1;
Fig. 5 is the D-D schematic cross-section in Fig. 1;
Fig. 6 is the inner structure schematic diagram of a kind of MEMS Piezoresistive Pressure Sensor the second of the present invention embodiment;
Fig. 7 is the close-up schematic view of the Z1 position in Fig. 6;
Fig. 8 is the close-up schematic view of the Z2 position in Fig. 6;
Fig. 9 is the E-E schematic cross-section in Fig. 6;
Figure 10 is the F-F schematic cross-section in Fig. 6;
Figure 11-12 is the schematic diagram of a kind of MEMS Piezoresistive Pressure Sensor of the present invention in preparation process after step one, and wherein Figure 12 is the G-G schematic cross-section in Figure 11;
Figure 13-14 is the schematic diagram of a kind of MEMS Piezoresistive Pressure Sensor of the present invention in preparation process after step 2, and wherein Figure 14 is the H-H schematic cross-section in Figure 13;
Figure 15-16 is the schematic diagram of a kind of MEMS Piezoresistive Pressure Sensor of the present invention in preparation process after step 3, and wherein Figure 16 is the I-I schematic cross-section in Figure 15;
Figure 17-18 is the schematic diagram of a kind of MEMS Piezoresistive Pressure Sensor of the present invention in preparation process after step 4, and wherein Figure 18 is the J-J schematic cross-section in Figure 17;
Figure 19-20 is the schematic diagram of a kind of MEMS Piezoresistive Pressure Sensor of the present invention in preparation process after step 5, and wherein Figure 20 is the K-K schematic cross-section in Figure 19;
Figure 21-22 is the schematic diagram of a kind of MEMS Piezoresistive Pressure Sensor of the present invention in preparation process after step 6, and wherein Figure 22 is the L-L schematic cross-section in Figure 21;
Figure 23-24 is the schematic diagram of a kind of MEMS Piezoresistive Pressure Sensor of the present invention in preparation process after step 7, and wherein Figure 24 is the M-M schematic cross-section in Figure 23.
Embodiment
The inner structure schematic diagram of a kind of the first embodiment of MEMS Piezoresistive Pressure Sensor of the present invention as shown in Figures 1 to 5, be provided with monocrystalline silicon piece substrate 1, monocrystalline silicon piece pressure membrane 2, pressure drag articles 3, patterned metal lead-in wire the 4, first insulation course 5, second insulation course 6, the 3rd insulation course 7, the position of monocrystalline silicon piece substrate 1, first insulation course 5, monocrystalline silicon piece pressure membrane 2, second insulation course 6, patterned metal lead-in wire the 4, the 3rd insulation course 7 sets gradually from the bottom to top.Foursquare groove 101 is offered at the upper surface of monocrystalline silicon piece substrate 1, as the vacuum chamber of whole pressure transducer, and on the first insulation course 5, offer the through hole corresponding with groove 101 shape same position, monocrystalline silicon piece pressure membrane 2 just becomes the pressure membrane of induction ambient pressure thus.
Carry out light boron doping process at the upper surface of monocrystalline silicon piece pressure membrane 2 and form four P type pressure drag bars 3, inside the lower edges allowing four pressure drag bars 3 be symmetrically distributed in groove 101 corresponding region between two and left and right edges, and allow upper and lower two pressure drag bars 3 arrange along stress direction (longitudinal direction), allow two the pressure drag bars 3 in left and right arrange along perpendicular stress direction (transverse direction).Electricity contact hole is offered in position corresponding with each pressure drag bar 3 two ends on the second insulation course 6, patterned metal lead-in wire 4 can be connected with each pressure drag bar by electricity contact hole, and realize four pressure drag bars 3 and join end to end, such four resistor stripes 3 and patterned metal lead-in wire 4 just define a Wheatstone bridge.3rd insulation course 7 is offered four for patterned metal lead-in wire 4 and the outside electrode hole carrying out routing, outwardly to export electrical signal.
For saving the space of each pressure drag bar and making all pressure drag bars be distributed near pressure membrane maximum stress, present embodiment is all set to four sections of distributing side by side each pressure drag bar 3 and connects as a whole by patterned metal lead-in wire 4, avoids in conventional pressure sensor to use dense boron doping process to realize each section of pressure drag bar to interconnect the temperature instability brought.
By above vibrational power flow, when monocrystalline silicon piece pressure membrane 2 bears extraneous stress time, can difference be there is in the change in resistance amount of upper and lower two change in resistance amounts of pressure drag bar 3 longitudinally arranged and the pressure drag bar 3 of left and right two horizontally sets, the balance of the Wheatstone bridge of four resistor stripes 3 and patterned metal lead-in wire 4 composition will be broken, produce certain output voltage, Wheatstone bridge is more uneven, and output voltage is larger.Therefore the change of output voltage directly can reflect the pressure size that monocrystalline silicon piece pressure membrane 2 is born.
The inner structure schematic diagram of a kind of MEMS Piezoresistive Pressure Sensor the second of the present invention as shown in Fig. 6 to Figure 10 embodiment, the first embodiment unlike, present embodiment also the upper surface of monocrystalline silicon piece pressure membrane 2 be arranged through dense phosphorus doping technique formed isolation strip 8, by isolation strip 8 make each section in each pressure drag bar 3 all spaced.This vibrational power flow, achieve all pressure drag bars all to be completely cut off by dense phosphorus, can by the current potential of isolation strip 8 be improved in the use procedure of pressure transducer, the electricity isolation performance of effective lifting pressure drag bar 3, under preventing hot conditions, Wheatstone bridge leaks electricity, and further increases pressure transducer stability at high temperature.Simultaneously, present embodiment also in each pressure drag bar 3 two ends of each section be arranged through dense boron doping formed electricity contact 9, allow the two ends of each section in each pressure drag bar 3 be gone between by electricity contact 9 and patterned metal 4 to be connected, the ohmic contact characteristic that pressure drag bar 3 and patterned metal go between 4 can be strengthened.
It should be noted that, the shape of further groove 101 of the present invention is not limited to positive mode, can also be designed to circle, rectangle or other shapes, as long as the ambient pressure that pressure membrane can be made to bear becomes can realize the object of the invention with symmetrical up and down.In addition, the material of patterned metal lead-in wire 4 can adopt the various metal materials with conductive characteristic such as Al, Au, Cu, Ni, Ag, Pt, alloy film; The material of the first insulation course 5, second insulation course 6, the 3rd insulation course 7 can be adopted as silicon dioxide film, silicon nitride film, silicon dioxide and silicon nitride and meet the various membraneous material with insulation characterisitic such as film, organic film, and its thickness range should be 1nm to 100 μm.
Elaborate to the method preparing a kind of MEMS Piezoresistive Pressure Sensor of the present invention below, as shown in Figure 12 to Figure 24, it comprises the following steps,
One, as required, prepare monocrystalline silicon piece substrate 1 and monocrystalline silicon piece pressure membrane 2, be processed into required thickness;
Two, utilize MEMS thin film deposition processes in monocrystalline silicon piece substrate 1, deposit formation first insulation course 5, the thickness of the first insulation course 5 is made to be 1nm ~ 100 μm, and on the first insulation course 5, output rectangular opening or circular port by etching technics, corresponding rectangular recess or circular groove are outputed in monocrystalline silicon piece substrate 1;
Three, bonding technology is utilized monocrystalline silicon piece pressure membrane 2 to be bonded on the first insulation course 5;
Four, as required, utilize light boron doping process that pressure drag bar 3 is set in monocrystalline silicon piece pressure membrane 2, utilize dense phosphorus doping technique that isolation strip 8 is set around every section of pressure drag bar, utilize dense boron doping process that electricity contact is set at the two ends of every section of pressure drag bar;
Five, utilize MEMS thin film deposition processes in monocrystalline silicon piece pressure membrane 2, deposit formation second insulation course 6, the thickness making the second insulation course 6 is 1nm ~ 100 μm, and utilizes etching technics on the second insulation course 6, output the end points electricity contact hole of pressure drag bar 3;
Six, utilize MEMS deposit metal films technique to deposit on the second insulation course 6 and form metallic film, and form patterned metal lead-in wire 4 by patterning process, patterned metal is gone between 4 to be connected with each pressure drag bar by electricity contact hole, and realize four pressure drag bars 3 and join end to end;
Seven, utilize MEMS thin film deposition processes at last layer deposition formation the 3rd insulation course 7 of patterned metal lead-in wire 4, the thickness of the 3rd insulation course 7 is made to be 1nm ~ 100 μm, and utilize etching technics on the 3rd insulation course 7, to output four patterned metal lead-in wires 4 and the outside electrode hole carrying out routing, outwardly to export electrical signal.
It is pointed out that the MEMS thin film deposition processes mentioned in above-mentioned steps two, step 5 and step 7 can adopt oxidation technology, low-pressure chemical vapor deposition (LPCVD) technique, plasma reinforced chemical vapour deposition (PECVD) technique, sol gel process or organic material to apply curing process identical functions technique.
The etching technics mentioned in above-mentioned steps two, step 5 and step 7 can adopt dry ionic etching technics, XeF gaseous corrosion technique, wet anisotropic etching process, wet method isotropic etch technique, focused-ion-beam lithography (FIB) technique or laser etching process identical functions technique.
The bonding technology mentioned in above-mentioned steps three can adopt silicon silicon thermal bonding technique, be coated with source bonding technology, organic gel bonding technology, inter-metallic bond technique or glass paste bonding technology identical functions technique.
The doping process mentioned in above-mentioned steps four can adopt ion implantation doping process or the source of painting diffusing, doping technique identical functions technique.
The MEMS deposit metal films technique mentioned in above-mentioned steps six can adopt sputtering sedimentation skill, electron-beam evaporation technique, heating evaporation depositing operation, electroplating deposition technique, electroless deposition technique or chemical replacement reaction process identical functions technique.
Above embodiment is only the description carried out the preferred embodiment of the present invention; the restriction not request protection domain of the present invention carried out; under not departing from the present invention and designing the prerequisite of spirit; the various forms of distortion that this area engineering technical personnel make according to technical scheme of the present invention, all should fall in protection domain that claims of the present invention determine.
Claims (13)
1. a MEMS Piezoresistive Pressure Sensor, comprise monocrystalline silicon piece substrate (1), monocrystalline silicon piece pressure membrane (2), pressure drag bar (3), it is characterized in that: also comprise patterned metal lead-in wire (4), the first insulation course (5), the second insulation course (6), the 3rd insulation course (7), the position of monocrystalline silicon piece substrate (1), the first insulation course (5), monocrystalline silicon piece pressure membrane (2), the second insulation course (6), patterned metal lead-in wire (4), the 3rd insulation course (7) sets gradually from the bottom to top; The upper surface of monocrystalline silicon piece substrate (1) offers groove (101), the first insulation course (5) offers and through hole that position corresponding identical with the shape of groove (101); Pressure drag bar (3) is formed and is circumferentially symmetrical arranged four between two at upper surface by light boron doping by monocrystalline silicon piece pressure membrane (2), four pressure drag bars (3) are P type and are distributed in inside the edge of groove (101) corresponding region, the upper position corresponding with each pressure drag bar (3) two ends of second insulation course (6) all offers electricity contact hole, and patterned metal lead-in wire (4) makes the realization of four pressure drag bars (3) join end to end by electricity contact hole; 3rd insulation course (7) offers four for patterned metal lead-in wire (4) and the outside electrode hole carrying out routing.
2. according to a kind of MEMS Piezoresistive Pressure Sensor according to claim 1, it is characterized in that: the shape of described groove (101) is rectangle or circle, to arrange along stress direction inside about two in four pressure drag bars (3) lower edges being symmetrically distributed in groove (101) corresponding region, arrange along perpendicular stress direction inside the symmetrical left and right edges being distributed in groove (101) corresponding region of another two pressure drag bars (3).
3. according to a kind of MEMS Piezoresistive Pressure Sensor according to claim 2, it is characterized in that: described each pressure drag bar (3) is all set to four sections of distributing side by side and connects as a whole by patterned metal lead-in wire (4), the upper surface of described monocrystalline silicon piece pressure membrane (2) is also provided with the isolation strip (8) formed by dense phosphorus doping, and four sections in each pressure drag bar (3) all spaced by isolation strip (8).
4. according to a kind of MEMS Piezoresistive Pressure Sensor according to claim 3, it is characterized in that: in described each pressure drag bar (3), the two ends of each section are equipped with the electricity contact (9) formed by the doping of dense boron, in each pressure drag bar (3) each section two ends by electricity contact (9) go between with patterned metal (4) be connected.
5. according to a kind of MEMS Piezoresistive Pressure Sensor described in any one of claim 1-4, it is characterized in that: the material of described patterned metal lead-in wire (4) is Al, Au, Cu, Ni, Ag, Pt or the alloy with conduction property.
6. according to a kind of MEMS Piezoresistive Pressure Sensor described in any one of claim 1-4, it is characterized in that: the material of described first insulation course (5), the second insulation course (6), the 3rd insulation course (7) is the composite membrane with the silicon dioxide of insulating property (properties), silicon nitride, organic film or silicon dioxide and silicon nitride, and the thickness of the first insulation course (5), the second insulation course (6), the 3rd insulation course (7) is 1nm ~ 100 μm.
7. prepare the method for MEMS Piezoresistive Pressure Sensor according to claim 1, it is characterized in that: comprise the following steps,
One, monocrystalline silicon piece substrate (1) and monocrystalline silicon piece pressure membrane (2) is prepared;
Two, utilize MEMS thin film deposition processes in monocrystalline silicon piece substrate (1) upper deposition formation first insulation course (5), the thickness of the first insulation course (5) is made to be 1nm ~ 100 μm, and on the first insulation course (5), output rectangular opening or circular port by etching technics, corresponding rectangular recess or circular groove are outputed in monocrystalline silicon piece substrate (1);
Three, utilize bonding technology monocrystalline silicon piece pressure membrane (2) to be bonded on the first insulation course (5), and monocrystalline silicon piece pressure membrane (2) is worked into the thickness of needs;
Four, utilize light boron doping process that pressure drag bar (3) is set in monocrystalline silicon piece pressure membrane (2);
Five, utilize MEMS thin film deposition processes in monocrystalline silicon piece pressure membrane (2) upper deposition formation second insulation course (6), the thickness making the second insulation course (6) is 1nm ~ 100 μm, and utilizes etching technics on the second insulation course (6), output the end points electricity contact hole of pressure drag bar (3);
Six, utilize MEMS deposit metal films technique to form metallic film in the upper deposition of the second insulation course (6), and form patterned metal lead-in wire (4) by patterning process;
Seven, utilize MEMS thin film deposition processes at last layer deposition formation the 3rd insulation course (7) of patterned metal lead-in wire (4), the thickness making the 3rd insulation course (7) is 1nm ~ 100 μm, and utilizes etching technics on the 3rd insulation course (7), to output four for patterned metal lead-in wire (4) and the outside electrode hole carrying out routing.
8. according to the method preparing MEMS Piezoresistive Pressure Sensor according to claim 7, it is characterized in that: also comprise in described step 4 and utilize dense phosphorus doping technique the operation of isolation strip (8) is set and utilizes dense boron doping process that the operation of electricity contact (9) is set, isolation strip (8) is by all spaced for four sections in each pressure drag bar (3), every section of two ends in each pressure drag bar (3) are equipped with electricity contact (9), the ohmic contact characteristic that electricity contact (9) goes between (4) for strengthening pressure drag bar (3) and patterned metal.
9. according to the method preparing MEMS Piezoresistive Pressure Sensor according to claim 8, it is characterized in that: the MEMS thin film deposition processes in described step 2, step 5 and step 7 is oxidation technology, low-pressure chemical vapor deposition (LPCVD) technique, plasma reinforced chemical vapour deposition (PECVD) technique, sol gel process or organic material coating curing process.
10. according to the method preparing MEMS Piezoresistive Pressure Sensor according to claim 8, it is characterized in that: the etching technics in described step 2, step 5 and step 7 is dry ionic etching technics, XeF gaseous corrosion technique, wet anisotropic etching process, wet method isotropic etch technique, focused-ion-beam lithography (FIB) technique or laser etching process.
11., according to the method preparing MEMS Piezoresistive Pressure Sensor according to claim 8, is characterized in that: the bonding technology in described step 3 is silicon silicon thermal bonding technique, is coated with source bonding technology, organic gel bonding technology, inter-metallic bond technique or glass paste bonding technology.
12., according to the method preparing MEMS Piezoresistive Pressure Sensor according to claim 8, is characterized in that: the MEMS deposit metal films technique in described step 6 is sputtering sedimentation skill, electron-beam evaporation technique, heating evaporation depositing operation, electroplating deposition technique, electroless deposition technique or chemical replacement reaction process.
13., according to the method preparing MEMS Piezoresistive Pressure Sensor according to claim 8, is characterized in that: the doping process in described step 4 is ion implantation doping process or the source of painting diffusing, doping technique.
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| CN114383763A (en) * | 2021-11-23 | 2022-04-22 | 林赛思尔(厦门)传感技术有限公司 | Full-bridge type resistance strain pressure sensor and preparation method thereof |
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