CN105738025A - Pressure sensor and preparation mehtod - Google Patents

Pressure sensor and preparation mehtod Download PDF

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Publication number
CN105738025A
CN105738025A CN201610171590.3A CN201610171590A CN105738025A CN 105738025 A CN105738025 A CN 105738025A CN 201610171590 A CN201610171590 A CN 201610171590A CN 105738025 A CN105738025 A CN 105738025A
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China
Prior art keywords
layer
silicon
pressure
silicon substrate
pressure drag
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CN201610171590.3A
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Chinese (zh)
Inventor
聂萌
安跃
黄庆安
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Southeast University
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Southeast University
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Priority to CN201610171590.3A priority Critical patent/CN105738025A/en
Publication of CN105738025A publication Critical patent/CN105738025A/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/18Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices

Abstract

The invention discloses a pressure sensor. The pressure sensor comprises a silicon substrate, a silicon oxide buried layer, a monocrystalline silicon layer, a monocrystalline silicon epitaxial layer, piezoresistance strips, etching holes, a vacuum seal chamber and an isolation region; the silicon oxide buried layer grows on the silicon substrate, the monocrystalline silicon layer grows on the silicon oxide buried layer, the etching holes locate in the silicon substrate, the silicon oxide buried layer and the monocrystalline silicon layer, the vacuum seal chamber locating in the silicon substrate, and the monocrystalline silicon epitaxial layer grows on the monocrystalline silicon layer and in the etching holes; the number of the piezoresistance strips is four, and the four piezoresistance strips locate in the monocrystalline silicon layer and the monocrystalline silicon epitaxial layer; and the isolation region locates between the piezoresistance strips, and the four piezoresistance strips form a wheatstone bridge. A preparation method of the sensor is further disclosed. The pressure sensor and the preparation method solve the problems that the thickness of the sensor increases due to bulk micro machining and a back trapezoidal cavity enables the transverse dimension of the sensor to be increased.

Description

A kind of pressure transducer and preparation method
Technical field
The present invention relates to a kind of pressure transducer and preparation method.
Background technology
Piezoresistive pressure sensor is the sensor utilizing the piezoresistive effect of Semiconducting Silicon Materials to make, and has highly sensitive, and dynamic response is fast, certainty of measurement is high, good stability, operating temperature range width, it is prone to small-sized and microminiaturized, it is simple to batch production and the feature such as easy to use.Therefore, it is that one quickly grows, widely used novel sensor.What the present invention to study is high-temp pressure sensor, and high-temp pressure sensor, as one of product main in sensor, is widely used in civilian and national defence.The general monocrystal silicon that adopts is all adopt body micro fabrication as the SOI pressure transducer of movable thin film, and silicon substrate back is carried out anisotropic etching, and then back and glass bonding form cavity.But this technique increases the thickness of sensor, owing to the ladder cavity at back also makes transducer transversely become large-sized.And utilize piezoresistive pressure sensor that etched hole technique formed, due to the existence of etched hole, epitaxial monocrystalline silicon cannot perform etching formation isolation area, thus cannot make that four pressure drag bars are mutually isolated to be opened, thus working sensor cannot be made in high temperature environments.
Summary of the invention
Technical problem: the technical problem to be solved is: a kind of pressure transducer is provided, solve body micro Process and increase sensor thickness and owing to back ladder cavity makes the problem that transducer transversely becomes large-sized, make simple for process, and sensor can be worked in high temperature environments.
Technical scheme: for solving above-mentioned technical problem, the technical solution used in the present invention is:
A kind of pressure transducer, this pressure transducer includes silicon substrate, silicon oxide buried layer, monocrystalline silicon layer, single-crystal Si epitaxial layers, pressure drag bar, etched hole, vacuum-sealed cavity and isolation area;Silicon oxide buried layer is grown in the top of silicon substrate, monocrystalline silicon layer is grown in the top of silicon oxide buried layer, etched hole is arranged in silicon substrate, silicon oxide buried layer and monocrystalline silicon layer, vacuum-sealed cavity is arranged in silicon substrate, etched hole is positioned at directly over vacuum-sealed cavity, and single-crystal Si epitaxial layers is grown in above monocrystalline silicon layer and in etched hole;It is positioned at the silicon substrate directly over vacuum-sealed cavity, silicon oxide buried layer, monocrystalline silicon layer and single-crystal Si epitaxial layers and forms movable sensitive thin layer;Pressure drag bar is four, and four pressure drag bars are arranged in monocrystalline silicon layer and single-crystal Si epitaxial layers;Isolation area is between pressure drag bar, by mutually isolated for four pressure drag bars;The bottom surface of isolation area is the end face of silicon oxide buried layer;Wheatstone bridge is constituted between four pressure drag bars;Pressure drag bar and isolation area are respectively positioned in movable sensitive thin layer.
As preference, described pressure transducer is the SOI piezoresistive pressure sensor adopting one side chamber technique to make.
As preference, described isolation area is groined type.
As preference, the bottom surface of described vacuum-sealed cavity is the stop surface that silicon substrate isotropic etches bottom, and the end face of vacuum-sealed cavity is the stop surface that silicon substrate isotropic etches top.
As preference, four described pressure drag bars are positioned at the center, edge of single-crystal Si epitaxial layers.
A kind of preparation method of pressure transducer, this preparation method comprises the following steps:
The first step, takes the soi wafer in a p-type<110>crystal orientation, and the monocrystalline silicon layer in soi wafer and silicon oxide buried layer are reacted ion etching, forms etched hole in monocrystalline silicon layer and silicon oxide buried layer;
Second step: by etched hole, the silicon substrate in soi wafer is carried out dry method isotropic etching, form cavity in a silicon substrate;
3rd step: epitaxial growth monocrystal silicon in the end face and etched hole of monocrystalline silicon layer, forms single-crystal Si epitaxial layers, and the cavity in silicon substrate forms vacuum-sealed cavity simultaneously:
4th step: single-crystal Si epitaxial layers is carried out phosphonium ion and gently adulterates, forms pressure drag bar;
5th step: the region between each pressure drag article is performed etching, the isolation area of formation;
6th step: be connected with each other by pressure drag article, forms Wheatstone bridge.
As preference, described pressure drag bar is four, and four pressure drag bars are positioned at the center of edge of single-crystal Si epitaxial layers.
As preference, described isolation area is groined type, and isolation area is by mutually isolated for four pressure drag bars.
Beneficial effect: compared with prior art, the method have the advantages that and solve the problem that body micro Process increases sensor thickness and problem transducer transversely being become large-sized due to back ladder cavity so that be simple for process.Traditional SOI high-temperature high-pressure resistance pressure transducer is all adopt body micro fabrication to be made, and silicon substrate is carried out the back side and draws chamber, and then the silicon substrate back side be bonded formation vacuum-sealed cavity with glass.This process increases size sensor, and owing to the ladder cavity of anisotropic etching formation also makes transducer transversely become large-sized.The embodiment of the present invention adopts portals to former front etching of SOI, then passes through hole and silicon substrate carries out isotropic etching formation cavity, seal cavity with epitaxial monocrystalline silicon subsequently, solve the problems referred to above.
Accompanying drawing explanation
Fig. 1 is the sectional view of the embodiment of the present invention;
Fig. 2 is the structural representation of the first step of preparation method in the embodiment of the present invention;
Fig. 3 is the structural representation of the second step of preparation method in the embodiment of the present invention;
Fig. 4 is the structural representation of the 3rd step of preparation method in the embodiment of the present invention;
Fig. 5 is the structural representation of the 4th step of preparation method in the embodiment of the present invention;
Fig. 6 is the structural representation of the 5th step of preparation method in the embodiment of the present invention;
Fig. 7 is the etched hole top view in the embodiment of the present invention.
Figure has: silicon substrate 1, silicon oxide buried layer 2, monocrystalline silicon layer 3, single-crystal Si epitaxial layers 4, pressure drag bar 5, etched hole 6, vacuum-sealed cavity 7, movable sensitive thin layer 8, isolation area 9, immovable sensitive thin film layer 10.
Detailed description of the invention
Below in conjunction with accompanying drawing, technical scheme is described in detail.
As shown in Figure 1 and Figure 7, a kind of pressure transducer of the embodiment of the present invention, including silicon substrate 1, silicon oxide buried layer 2, monocrystalline silicon layer 3, single-crystal Si epitaxial layers 4, pressure drag bar 5, etched hole 6, vacuum-sealed cavity 7 and isolation area 9.Silicon oxide buried layer 2 is grown in the top of silicon substrate 1, monocrystalline silicon layer 3 is grown in the top of silicon oxide buried layer 2, etched hole 6 is arranged in silicon substrate 1, silicon oxide buried layer 2 and monocrystalline silicon layer 3, vacuum-sealed cavity 7 is arranged in silicon substrate 1, etched hole 6 is positioned at directly over vacuum-sealed cavity 7, and single-crystal Si epitaxial layers 4 is grown in above monocrystalline silicon layer 3 and in etched hole 6.It is positioned at the silicon substrate 1 directly over vacuum-sealed cavity 7, silicon oxide buried layer 2, monocrystalline silicon layer 3 and single-crystal Si epitaxial layers 4 and forms movable sensitive thin layer 8.Pressure drag bar 5 is four, and four pressure drag bars 5 are arranged in monocrystalline silicon layer 3 and single-crystal Si epitaxial layers 4.Isolation area 9 is between pressure drag bar 5, by mutually isolated for four pressure drag bars 5.The bottom surface of isolation area 9 is the end face of silicon oxide buried layer 2.Wheatstone bridge is constituted between four pressure drag bars 5.Pressure drag bar 5 and isolation area 9 are respectively positioned in movable sensitive thin layer 8.Described pressure transducer is the SOI piezoresistive pressure sensor adopting one side chamber technique to make.
Preferably, described isolation area 9 is in groined type.Groined type isolation area 9 effectively avoids PN junction between pressure drag bar 5 and produces so that mutually isolated between pressure drag bar 5 open, it is to avoid the high temperature restriction of PN junction so that pressure transducer can work in high temperature environments.
Preferably, the bottom surface of described vacuum-sealed cavity 7 is the stop surface that silicon substrate 1 isotropic etches bottom, and the end face of vacuum-sealed cavity 7 is the stop surface that silicon substrate 1 isotropic etches top.By etched hole 6, silicon substrate 1 is carried out isotropic etching, form complete cavity structure, i.e. vacuum-sealed cavity 7.
Preferably, four described pressure drag bars 5 are positioned at the center, edge of single-crystal Si epitaxial layers 4.Being that movable sensitive thin layer 8 is subject to stress maximum region in the center of single-crystal Si epitaxial layers 4 edge, pressure drag bar 5 is positioned at this position, it is possible to suffered stress well detected.
This SOI piezoresistive pressure sensor utilizes one side chamber technique to make, and processing technique is simple, overcomes traditional back side and draws the shortcoming of chamber process waste, effectively reduces lateral dimension and the longitudinal size of SOI high-temp pressure sensor.Prior art utilizes the back side to draw the SOI piezoresistive pressure sensor of chamber technique making owing to adopting such as KOH anisotropic etching to form cavity, so the shape of cavity is trapezoidal, which increases the lateral dimension of sensor, and draw chamber formation cavity to need to be bonded with glass from back, which increases the thickness of sensor.The embodiment of the present invention adopts portals to former front etching of SOI, then passes through hole and silicon substrate carries out isotropic etching formation cavity, seal cavity with epitaxial monocrystalline silicon subsequently, it is not necessary to be bonded with glass again.This reduces the thickness of the lateral dimension of sensor and sensor.
Simultaneously, chamber technique is drawn at the existing back side, and owing to utilizing the back side to draw, SOI piezoresistive pressure sensor that chamber technique makes forms cavity owing to adopting such as KOH anisotropic etching to draw chamber from the back side, need the size that accent is drawn at the accurately calculating back side just can be accurately controlled size and the thickness of thin film, so being difficult to accurately control size and the thickness of thin film.And the one side chamber technique of the embodiment of the present invention can be accurately controlled size and the thickness of thin film by single-crystal Si epitaxial layers 4, thus controlling size and the thickness of sensor.
Meanwhile, the existence of the oxidation buried layer of the embodiment of the present invention can be isolated between pressure drag bar and silicon substrate, and isolation area is it is also possible that isolate between pressure drag bar so that sensor can work in high temperature environments.
The preparation method of above-mentioned SOI piezoresistive pressure sensor, comprises the following steps:
The first step: as in figure 2 it is shown, take the soi wafer in a p-type<110>crystal orientation, the monocrystalline silicon layer 3 in soi wafer and silicon oxide buried layer 2 are reacted ion etching, forms etched hole 6 in monocrystalline silicon layer 3 and silicon oxide buried layer 2.
Second step: as it is shown on figure 3, the silicon substrate 1 in soi wafer is carried out dry method isotropic etching by etched hole 6, forms cavity in silicon substrate 1.
3rd step: as shown in Figure 4, epitaxial growth monocrystal silicon in the end face and etched hole 6 of monocrystalline silicon layer 3, form single-crystal Si epitaxial layers 4, the cavity in silicon substrate 1 forms vacuum-sealed cavity 7 simultaneously.It is positioned at the silicon substrate 1 directly over vacuum-sealed cavity 7, single-crystal Si epitaxial layers 4, monocrystalline silicon layer 3 and silicon oxide buried layer 2 and collectively forms movable sensitive thin layer 8.
4th step: gently adulterate as it is shown in figure 5, single-crystal Si epitaxial layers 4 is carried out phosphonium ion, forms pressure drag bar 5.
5th step: as shown in Figure 6, performs etching the region between each pressure drag bar 5, the isolation area 9 of formation.
6th step: as it is shown in fig. 7, be connected with each other by pressure drag article 5, forms Wheatstone bridge.
Preferably, described pressure drag bar 5 is four, and four pressure drag bars 5 are positioned at the center of edge of single-crystal Si epitaxial layers 4.
Preferably, described isolation area 9 is in groined type, and isolation area 9 is by mutually isolated for four pressure drag bars 5.Groined type isolation area 9 effectively avoids PN junction between pressure drag bar 5 and produces so that mutually isolated between pressure drag bar 5 open, it is to avoid the high temperature restriction of PN junction so that pressure transducer can work in high temperature environments.
The SOI piezoresistive pressure sensor of above-described embodiment, the bottom surface of vacuum-sealed cavity 7 is the stop surface that silicon substrate 1 isotropic etches bottom, the end face of vacuum-sealed cavity 7 is the stop surface that silicon substrate 1 isotropic etches top, and vacuum-sealed cavity about 7 two sides is isotropic etching stop surface, left and right.It is positioned at the silicon substrate 1 directly over vacuum-sealed cavity 7, single-crystal Si epitaxial layers 4, monocrystalline silicon layer 3 and silicon oxide buried layer 2 and collectively forms movable sensitive thin layer 8.Non-silicon substrate 1, single-crystal Si epitaxial layers 4, monocrystalline silicon layer 3 and the oxidation buried layer 2 being positioned at directly over vacuum-sealed cavity 7 constitutes immovable sensitive thin film layer 10.Carry out phosphonium ion in single-crystal Si epitaxial layers 4 gently to adulterate, form pressure drag bar 5.To performing etching the isolation area 9 forming rotary island structure between each pressure drag bar 5.Isolation area 9 is positioned at the surface of silicon oxide buried layer 2.And four isolation areas form " well " word, keep apart between four pressure drag bars 5.Wheatstone bridge is constituted between each pressure drag bar 5.Wheatstone bridge is the common structure of this area.Single-crystal Si epitaxial layers 4 is grown in above monocrystalline silicon layer 3 and in etched hole 6.Control the thickness of single-crystal Si epitaxial layers 4, it is possible to control the thickness of movable sensitive thin layer 8, increase transducer sensitivity, and single-crystal Si epitaxial layers 4 makes cavities seals form vacuum-sealed cavity 7.
In the SOI piezoresistive pressure sensor of above-described embodiment, silicon oxide buried layer 2 is isolated between silicon substrate 1 and pressure drag bar 5, solves the heatproof restriction of PN junction so that sensor can work in high temperature environments.
The work process of the SOI piezoresistive pressure sensor utilizing the technique making of one side chamber of said structure is: sensor top is applied pressure effect, movable sensitive thin layer 8 is bent, being positioned at the pressure drag bar 5 on movable sensitive thin layer 8 owing to being subject to the effect of power, resistance value changes.Because constituting Wheatstone bridge between four pressure drag bars 5, the resistance of change causes that the voltage exported by Wheatstone bridge is changed, the voltage of detection Wheatstone bridge output, it is possible to achieve pressure measxurement.
The embodiment of the present invention solves the problem that body micro Process increases sensor thickness and problem transducer transversely being become large-sized due to back ladder cavity so that simple for process.What existing formation SOI piezoresistive pressure sensor adopted is that chamber technique formation is drawn at the back side, owing to needs and glass are bonded, increase the thickness of sensor, and back ladder cavity also makes transducer transversely become large-sized, and back is drawn chamber and adopted anisotropic etching to be difficult to accurately control film thickness.The one side chamber technique of the embodiment of the present invention makes SOI piezoresistive pressure sensor, owing to being draw chamber from front, it is not necessary to being bonded with glass, thus reducing the thickness of sensor, reducing lateral dimension.Simultaneously as draw chamber from front and sealed up by cavity by single-crystal Si epitaxial layers 4, so the thickness of single-crystal Si epitaxial layers 4 and size determine thickness and the size of thin film, it is possible to accurately control sensor thickness and size.
Meanwhile, silicon oxide buried layer 2 makes between pressure drag bar 5 and silicon substrate 1 mutually isolated, and isolation area 9 also makes between each pressure drag bar 5 mutually isolated, so that sensor can work in high temperature environments.
The SOI piezoresistive pressure sensor of the embodiment of the present invention, utilizes one side chamber technique to be made.When sensor top is applied pressure effect so that movable sensitive thin layer 8 bends, and is positioned at the pressure drag bar 5 on movable sensitive thin layer 8, and owing to being subject to the effect of power, resistance value changes.Because constituting Wheatstone bridge between four pressure drag bars, the resistance of change causes that the voltage exported by Wheatstone bridge is changed, the voltage of detection Wheatstone bridge output, it is possible to achieve pressure measxurement.
The ultimate principle of the present invention, principal character and advantage have more than been shown and described.Skilled person will appreciate that; the present invention is not by the restriction of above-mentioned specific embodiment; description in above-mentioned specific embodiment and description is intended merely to and further illustrates principles of the invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements both fall within the claimed scope of the invention.The scope of protection of present invention is defined by claims and equivalent thereof.

Claims (8)

1. a pressure transducer, it is characterized in that, this pressure transducer includes silicon substrate (1), silicon oxide buried layer (2), monocrystalline silicon layer (3), single-crystal Si epitaxial layers (4), pressure drag bar (5), etched hole (6), vacuum-sealed cavity (7) and isolation area (9)
Silicon oxide buried layer (2) is grown in the top of silicon substrate (1), monocrystalline silicon layer (3) is grown in the top of silicon oxide buried layer (2), etched hole (6) is arranged in silicon substrate (1), silicon oxide buried layer (2) and monocrystalline silicon layer (3), vacuum-sealed cavity (7) is arranged in silicon substrate (1), etched hole (6) is positioned at directly over vacuum-sealed cavity (7), and single-crystal Si epitaxial layers (4) is grown in monocrystalline silicon layer (3) top and etched hole (6);It is positioned at the silicon substrate (1) directly over vacuum-sealed cavity (7), silicon oxide buried layer (2), monocrystalline silicon layer (3) and single-crystal Si epitaxial layers (4) and forms movable sensitive thin layer (8);Pressure drag bar (5) is four, and four pressure drag bars (5) are arranged in monocrystalline silicon layer (3) and single-crystal Si epitaxial layers (4);Isolation area (9) is positioned between pressure drag bar (5), by mutually isolated for four pressure drag bars (5);The end face that bottom surface is silicon oxide buried layer (2) of isolation area (9);Wheatstone bridge is constituted between four pressure drag bars (5);Pressure drag bar (5) and isolation area (9) are respectively positioned in movable sensitive thin layer (8).
2. the pressure transducer described in claim 1, it is characterised in that described pressure transducer is the SOI piezoresistive pressure sensor adopting one side chamber technique to make.
3. the pressure transducer described in claim 1, it is characterised in that described isolation area (9) is in groined type.
4. the pressure transducer described in claim 1, it is characterized in that, the bottom surface of described vacuum-sealed cavity (7) is the stop surface that silicon substrate (1) isotropic etches bottom, and the end face of vacuum-sealed cavity (7) is the stop surface that silicon substrate (1) isotropic etches top.
5. the pressure transducer described in claim 1,2 or 3, it is characterised in that four described pressure drag bars (5) are positioned at the center, edge of single-crystal Si epitaxial layers (4).
6. the preparation method of the pressure transducer described in a claim 1, it is characterised in that this preparation method comprises the following steps:
The first step, takes the soi wafer in a p-type<110>crystal orientation, and the monocrystalline silicon layer (3) in soi wafer and silicon oxide buried layer (2) are reacted ion etching, forms etched hole (6) in monocrystalline silicon layer (3) and silicon oxide buried layer (2);
Second step: the silicon substrate (1) in soi wafer is carried out dry method isotropic etching by etched hole (6), forms cavity in silicon substrate (1);
3rd step: epitaxial growth monocrystal silicon in the end face and etched hole (6) of monocrystalline silicon layer (3), forms single-crystal Si epitaxial layers (4), and the cavity in silicon substrate (1) forms vacuum-sealed cavity (7) simultaneously:
4th step: single-crystal Si epitaxial layers (4) is carried out phosphonium ion and gently adulterates, forms pressure drag bar (5);
5th step: the region between each pressure drag article (5) is performed etching, the isolation area (9) of formation;
6th step: be connected with each other by pressure drag article (5), forms Wheatstone bridge.
7. the preparation method of the pressure transducer described in claim 6, it is characterised in that described pressure drag bar (5) is four, and four pressure drag bars (5) are positioned at the center of edge of single-crystal Si epitaxial layers (4).
8. the preparation method of the pressure transducer described in claim 6 or 7, it is characterised in that described isolation area (9) is in groined type, and isolation area (9) are by mutually isolated for four pressure drag bars (5).
CN201610171590.3A 2016-03-24 2016-03-24 Pressure sensor and preparation mehtod Pending CN105738025A (en)

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CN107176585A (en) * 2017-05-24 2017-09-19 广东合微集成电路技术有限公司 The piezoresistive pressure sensor and its manufacture method of a kind of suitable surface mount process
CN109399553A (en) * 2017-08-15 2019-03-01 无锡华润上华科技有限公司 A kind of preparation method of semiconductor devices
CN109399555A (en) * 2017-08-18 2019-03-01 无锡华润上华科技有限公司 A kind of preparation method of semiconductor devices
CN111122025A (en) * 2018-11-01 2020-05-08 中科院微电子研究所昆山分所 Pressure sensor

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CN107176585A (en) * 2017-05-24 2017-09-19 广东合微集成电路技术有限公司 The piezoresistive pressure sensor and its manufacture method of a kind of suitable surface mount process
CN107176585B (en) * 2017-05-24 2019-06-21 广东合微集成电路技术有限公司 A kind of piezoresistive pressure sensor and its manufacturing method of suitable surface mount process
CN109399553A (en) * 2017-08-15 2019-03-01 无锡华润上华科技有限公司 A kind of preparation method of semiconductor devices
CN109399555A (en) * 2017-08-18 2019-03-01 无锡华润上华科技有限公司 A kind of preparation method of semiconductor devices
CN111122025A (en) * 2018-11-01 2020-05-08 中科院微电子研究所昆山分所 Pressure sensor

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