CN207375750U - MEMS micro-heating plate - Google Patents
MEMS micro-heating plate Download PDFInfo
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- CN207375750U CN207375750U CN201721047736.XU CN201721047736U CN207375750U CN 207375750 U CN207375750 U CN 207375750U CN 201721047736 U CN201721047736 U CN 201721047736U CN 207375750 U CN207375750 U CN 207375750U
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 159
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 58
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 58
- 239000010703 silicon Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 238000009413 insulation Methods 0.000 claims abstract description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 42
- 238000005516 engineering process Methods 0.000 abstract description 17
- 238000000034 method Methods 0.000 abstract description 16
- 238000013461 design Methods 0.000 abstract description 14
- 238000012545 processing Methods 0.000 abstract description 12
- 238000000059 patterning Methods 0.000 abstract description 7
- 238000000151 deposition Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000002131 composite material Substances 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001737 promoting effect Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 208000035126 Facies Diseases 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000007084 catalytic combustion reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 208000030208 low-grade fever Diseases 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0083—Temperature control
- B81B7/009—Maintaining a constant temperature by heating or cooling
- B81B7/0096—Maintaining a constant temperature by heating or cooling by heating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0035—Testing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/03—Electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Resistance Heating (AREA)
- Micromachines (AREA)
Abstract
The embodiment of the utility model discloses little hot plate of MEMS, this little hot plate of MEMS includes: the silicon-based substrate comprises a measuring region and a heating region; a first dielectric layer located on the upper surface of the silicon-based substrate; the heating electrode and the measuring electrode are arranged in a same-layer insulation manner and are both positioned on the first dielectric layer, the heating electrode is correspondingly arranged in the heating area, and the measuring electrode is correspondingly arranged in the measuring area; and the heat insulation groove is positioned on the lower surface of the silicon-based substrate and penetrates through the silicon-based substrate, and the groove bottom of the heat insulation groove covers the heating area in the direction vertical to the silicon-based substrate. In the embodiment of the utility model, the heating electrode and the measuring electrode of the MEMS micro-hot plate adopt the coplanar design, and can be completed by only depositing a metal electrode layer and adopting a metal patterning process for one time; compared with the prior art, the method has the advantages of reducing the complexity of the processing technology, reducing the manufacturing procedures, reducing the manufacturing cost and improving the manufacturing yield of the MEMS micro-hotplate.
Description
Technical field
The utility model embodiment is related to MEMS technology more particularly to a kind of MEMS micro-hotplates.
Background technology
Micro-hotplate (Micro Hot plate, MHP) based on silicon micromachining technology is microelectromechanical systems
Common heating platform in (Microelectromechanical Systems, MEMS) is widely used to minitype gas biography
The micro elements such as sensor, film calorimetric calorimeter, micro-acceleration gauge and barometer.The processing technology of existing micro-hotplate relies primarily on light
The technologies such as quarter, diffusion, oxidation, film growth, dry etching, wet etching and evaporation sputtering.
However, it is necessary to manufacture heating electrode and the top manufacture in heating electrode in the processing technology of existing micro-hotplate
Measuring electrode causes processing technology complicated；On the other hand, in the processing technology of existing micro-hotplate, heating electrode using platinum and
Measuring electrode causes high processing costs using gold.
Utility model content
The utility model embodiment provides a kind of MEMS micro-hotplates, to reduce processing cost.
The utility model embodiment provides a kind of MEMS micro-hotplates, which includes：
Silicon-based substrate, the silicon-based substrate include measured zone and heating region；
First dielectric layer, positioned at the upper surface of the silicon-based substrate；
Electrode and measuring electrode are heated, the heating electrode and the measuring electrode with layer insulation set and are respectively positioned on described
On first dielectric layer, the heating electrode is correspondingly arranged at the heating region and the measuring electrode is correspondingly arranged at institute
State measured zone；
Heat-insulated groove, positioned at the lower surface of the silicon-based substrate and through the silicon-based substrate and the heat-insulated groove
Slot bottom the heating region is being covered on the direction of the silicon-based substrate.
Further, the MEMS micro-hotplates further include：
Second dielectric layer, where the heating electrode and the measuring electrode in film layer and second dielectric
Layer is in the flush of the surface in the region of the correspondence measuring electrode and the measuring electrode to expose the measuring electrode
Surface.
Further, the composition material of the measuring electrode and the heating electrode is metal platinum, the measuring electrode
Thickness with the heating electrode is 100nm~400nm.
Further, the heating region includes lead leading-out zone around the measured zone and the heating region
Domain, the measuring electrode lead of the measuring electrode are drawn from the lead export area.
Further, the heating region is divided into the first corner regions set in the first diagonal and the second corner region
Domain, the third angle set in the second diagonal are settled in an area domain and fourth corner region and remaining heating region, wherein, described the
A pair of of linea angulata and second diagonal are arranged in a crossed manner, and the residue heating region surrounds the measured zone.
Further, the heating of any corner regions is electric in first corner regions~fourth corner region
Has at least one opening.
Further, the heating of any corner regions is electric in first corner regions~fourth corner region
The line width of pole is less than the line width for the heating electrode for being located at the remaining heating region.
Further, the heating electrode of the remaining heating region has at least one opening.
Further, the area of any corner regions occupies institute in first corner regions~fourth corner region
State the 5%~50% of heating region and the overall area area of the measured zone.
The MEMS micro-hotplates that the utility model embodiment provides heat electrode and measuring electrode with layer insulation set and equal position
In on the first dielectric layer.In the utility model embodiment, the heating electrode and measuring electrode of MEMS micro-hotplates are used to be set with layer
I.e. copline designs, it is only necessary to deposit one layer of metal electrode layer and MEMS low-grade fevers can be completed using a metal patterning processes
The heating electrode of plate and the manufacture of measuring electrode.Compared with prior art, the utility model embodiment reduces processing technology and answers
Miscellaneous degree reduces manufacturing process and reduces manufacture cost, at the same heat electrode and measuring electrode can also using copline design
Electrode manufacturing yield is enough improved, and then improves the manufacturing yield of MEMS micro-hotplates.
Description of the drawings
It is required in being described below to embodiment in order to illustrate more clearly of the technical scheme in the embodiment of the utility model
Attached drawing to be used does one and simply introduces, it should be apparent that, the accompanying drawings in the following description is some implementations of the utility model
Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings
Obtain other attached drawings.
Fig. 1~Fig. 3 is the schematic diagram for a variety of MEMS micro-hotplates that the utility model embodiment provides；
Fig. 4~Fig. 5 is the schematic diagram for a variety of MEMS micro-hotplates that the utility model embodiment provides；
Fig. 6 is a kind of flow chart of the manufacturing method for MEMS micro-hotplates that the utility model embodiment provides.
Specific embodiment
To make the purpose of this utility model, technical solution and advantage clearer, implement hereinafter with reference to the utility model
Attached drawing in example, clearly and completely describes the technical solution of the utility model, it is clear that described implementation by embodiment
Example is the utility model part of the embodiment, instead of all the embodiments.Based on the embodiment in the utility model, this field
Those of ordinary skill's all other embodiments obtained without making creative work, belong to the utility model
The scope of protection.
With reference to shown in 1~Fig. 3 of figure, for the schematic diagram for a variety of MEMS micro-hotplates that the utility model embodiment provides, this reality
It applies the MEMS micro-hotplates in example and is chosen as the heating platform in the microelectromechanical systems based on silicon micromachining technology (MEMS), it can
Applied to micro elements such as mini type gas sensor, film calorimetric calorimeter, micro-acceleration gauge and barometers.
MEMS micro-hotplates provided in this embodiment include：Silicon-based substrate 10, silicon-based substrate 10 include measured zone 10a and add
Thermal region 10b；First dielectric layer 11, positioned at the upper surface of silicon-based substrate 10；Electrode 13 and measuring electrode 12 are heated, heats electrode
13 and measuring electrode 12 with layer insulation set and being respectively positioned on the first dielectric layer 11, heating electrode 13 is correspondingly arranged at heating region
10b and measuring electrode 12 are correspondingly arranged at measured zone 10a；Heat-insulated groove 14, positioned at the lower surface of silicon-based substrate 10 and is passed through
The slot bottom for wearing silicon-based substrate 10 and heat-insulated groove 14 is covering heating region 10b on the direction of silicon-based substrate 10.
The arrangement mode of measured zone 10a and heating region 10b in silicon-based substrate 10, such as Fig. 1 are not limited in the present embodiment
The heating region 10b of shown optional silicon-based substrate 10 surrounds measured zone 10a；The measurement of optional silicon-based substrate 10 as shown in Figure 2
Region 10a and the arrangement of heating region 10b cosequences；The measured zone 10a of optional silicon-based substrate 10 as shown in Figure 3 is around heating
Region 10b.It will be understood by those skilled in the art that in the heating function and the premise of test function that do not influence MEMS micro-hotplates
Under, related practitioner can be rationally set in silicon-based substrate according to needed for manufacturing process, product and the limitations such as working condition
Each functional area.
Optional silicon-based substrate 10 is in the present embodiment<100>The monocrystalline silicon of crystal orientation, the size of optional silicon-based substrate 10 is 2
It is very little, 4 cun or 6 cun, the thickness of optional silicon-based substrate 10 is 200 μm~525 μm.Also optional silicon-based substrate in other embodiments
Crystal orientation, size and thickness are different, such as are chosen as<111>Or<110>, 5 inches, 550 μm etc..Related practitioner can basis
Needed for manufacturing process, product and the limitations such as working condition, the silicon-based substrate of crystal orientation, size and thickness needed for Rational choice, at this
Without concrete restriction in utility model.It should be noted that the one group of heating region and measured zone in silicon-based substrate correspond to
One MEMS micro-hotplate, 4 inches of silicon-based substrate can correspond to the thousands of a MEMS micro-hotplates of manufacture, in the present embodiment only with wherein
The structure of one MEMS micro-hotplate illustrates.
The first dielectric layer 11 is formed in the present embodiment in silicon-based substrate 10, optional first dielectric layer 11 is using oxidation
Any one manufacture in the composite material of silicon, silicon nitride and silica and silicon nitride, the function of the first dielectric layer 11 are
Insulation.It should be noted that the first dielectric layer 11 is also formed on the lower surface of silicon-based substrate 10.Optional first dielectric layer 11
Thickness be 500nm~2000nm.
Heat-insulated groove 14 is located at the lower surface of silicon-based substrate 10 and through silicon-based substrate 10 and heat-insulated recessed in the present embodiment
The slot bottom of slot 14 is covering heating region 10b on the direction of silicon-based substrate 10.Heat-insulated groove 14 plays heat insulation, every
Thermal effect is related with the depth of groove and width.Heat-insulated groove 14 is chosen in the present embodiment to cover through silicon-based substrate 10 and its slot bottom
Lid heating region 10b, it is clear that the heat-insulated groove 14 can be effectively heat-insulated.
Heating electrode 13 and measuring electrode 12 are additionally provided in the present embodiment on first dielectric layer 11, heat electrode 13 and is surveyed
Electrode 12 is measured with layer insulation set.It is that copline is set that electrode 13 and measuring electrode 12 are heated in the present embodiment using being set with layer
Meter, it is only necessary to deposit one layer of metal electrode layer and the heating electricity of MEMS micro-hotplates can be completed using a metal patterning processes
Pole 13 and the manufacture of measuring electrode 12.And deposition double layer of metal electrode layer is needed in the prior art and two minor metal figures are respectively adopted
Case chemical industry skill could form measuring electrode and heating electrode, and compared with prior art, the present embodiment reduces processing technology complexity
It spends, reduce manufacturing process and reduce manufacture cost, while heat electrode 13 and measuring electrode 12 and set also using with layer
Electrode manufacturing yield can be improved.
Optionally, the composition material of measuring electrode 12 and heating electrode 13 is metal platinum in MEMS micro-hotplates, measurement electricity
The thickness of pole 12 and heating electrode 13 is 100nm~400nm.The operating temperature of MEMS device usually at 300 ° or so,
Other metal materials are oxidized easily at a temperature of 300 ° or so and metal platinum or gold are not easy to be aoxidized；On the other hand, it is golden
Fusing point is relatively low, if be used as heating electrode prolonged application, electrode performance can be deteriorated.Therefore optional metal platinum in MEMS micro-hotplates
As measuring electrode 12 and the composition material of heating electrode 13.In the present embodiment the measuring electrode 12 of optional MEMS micro-hotplates and plus
The thickness of thermode 13 is 100nm~400nm, and the thickness of electrode is with resistance in inverse ratio, and the thicker resistance of thickness of electrode is smaller, electricity
Pole thickness is thinner, and resistance is bigger.
It will be understood by those skilled in the art that according to the difference of the operating temperature of MEMS micro-hotplate application devices, it is related from
Industry personnel can Rational choice MEMS micro-hotplates measuring electrode and heating electrode composition material, be not limited only to metal platinum；And
According to MEMS micro-hotplates apply MEMS device, related practitioner can Rational choice MEMS micro-hotplates measuring electrode and heating
The thickness of electrode is not limited only to above-mentioned restriction.
Heating electrode 13 is correspondingly arranged at heating region 10b in the present embodiment and measuring electrode 12 is correspondingly arranged at survey
Measure region 10a.It will be understood by those skilled in the art that when manufacturing MEMS micro-hotplates, related practitioner can be according to product institute
The position of heating electrode and measuring electrode need to be designed, the region of corresponding heating electrode may be defined as heating region, corresponding measurement electricity
The region of pole may be defined as measured zone, therefore not limit the position of heating region and measured zone specifically, but heating zone
Domain and measured zone change with heating electrode and the design transformation of measuring electrode.
It should be noted that the parameter attribute of the silicon-based substrate limited in the present embodiment, the first dielectric layer and heat-insulated groove
A kind of only specific example, in other alternative embodiments, related practitioner can be according to product applications, process conditions
Etc. each film layer structure of factors Rational choice parameter attribute, however it is not limited to above-mentioned example；The silicon-based substrate that is limited in the present embodiment,
First dielectric layer, function, the operation principle for heating electrode, measuring electrode and heat-insulated groove etc. are same as the prior art, herein not
It repeats again；On the other hand, the structure of MEMS micro-hotplates includes but not limited to shown in Fig. 1~Fig. 3, institute in the utility model embodiment
The coplanar design of heating electrode and measuring electrode for the MEMS micro-hotplates stated is suitable for the MEMS micro-hotplates of existing any structure,
Without specifically limiting in the utility model.
MEMS micro-hotplates provided in this embodiment, heat electrode and measuring electrode with layer insulation set and is respectively positioned on first Jie
In electric layer.In the present embodiment, it is copline design that the heating electrode and measuring electrode of MEMS micro-hotplates, which are used and set with layer, is only needed
It deposits one layer of metal electrode layer and heating electrode and the survey of MEMS micro-hotplates can be completed using a metal patterning processes
Measure the manufacture of electrode.Compared with prior art, the present embodiment reduces processing technology complexity, reduces manufacturing process and drop
Low manufacture cost, while heat electrode and measuring electrode electrode manufacturing yield can also be improved using copline design, into
And improve the manufacturing yield of MEMS micro-hotplates.
Optionally, MEMS micro-hotplates further include：The second dielectric layer 15 as shown in FIG. 1 to 3, positioned at heating 13 He of electrode
In 12 place film layer of measuring electrode and the second dielectric layer 15 is in the surface in the region of corresponding measuring electrode 12 and measuring electrode 12
Flush to expose the surface of measuring electrode 12.In the present embodiment optional second dielectric layer 15 be silicon nitride or silica,
Its thickness is chosen as 150nm~1000nm.It, can be after forming the second dielectric layer 15 in measuring electrode 12 and heating electrode 13
Different materials are covered on MEMS micro-hotplates to form MEMS device.Such as cover metal-oxide semiconductor (MOS) on MEMS micro-hotplates
Metal-oxide semiconductor (MOS) formula gas sensor is formed with electrode；One layer of catalyst material, that is, structure is covered on MEMS micro-hotplates
Into catalytic combustion method gas sensor；A floor height E material is covered on MEMS micro-hotplates and forms infrared light supply.This reality
It applies in example, electrode 13 is heated in MEMS device, covering material thereon is heated by the second dielectric layer 15, measuring electrode 12 passes through
Second dielectric layer 15 is electrically connected with covering material thereon, then measuring electrode 12 is used to measure the covering material by heating electrode 13
Resistance variations after heating.
Optionally, a kind of MEMS micro-hotplates of the utility model embodiment offer, the MEMS micro-hotplates are provided with reference to figure 4
Middle heating region 10b includes lead export area 10c, the survey of measuring electrode 12 around measured zone 10a and heating region 10b
Contact conductor 12a is measured to draw from lead export area 10c.Wherein Fig. 1 is Fig. 4 along the sectional view of A-A', it is necessary to which explanation, is cutd open
Bulk is illustrated as an entirety, in order to characterize heating electrode 13 be one in sectional view in view in order to characterize measuring electrode 12
It is a whole and be illustrated as bulk.Electrode 13, heating contact conductor 13a, measuring electrode 12 and measuring electrode are heated in the present embodiment
Lead 12a is set with layer, is drawn for the ease of measuring electrode lead 12a with layer, and leaded export is set in heating region 10b
Region 10c, measuring electrode lead 12a are drawn from lead export area 10c.It only needs to deposit one layer of metal electricity in the present embodiment
Pole layer and the heating electrode 13, heating contact conductor 13a, survey that MEMS micro-hotplates can be completed using a metal patterning processes
Measure electrode 12 and the manufacture of measuring electrode lead 12a.Compared with prior art, reduce processing technology complexity, reduce system
It makes process and reduces manufacture cost, additionally it is possible to improve the manufacturing yield of MEMS micro-hotplates.
Optionally, a kind of MEMS micro-hotplates of the utility model embodiment offer, the MEMS micro-hotplates are provided with reference to figure 5
Middle heating region 10b includes lead export area 10c, the survey of measuring electrode 12 around measured zone 10a and heating region 10b
Contact conductor 12a is measured to draw from lead export area 10c.Optional heating region 10b is divided into the set in the first diagonal
One corner regions 101a and the second corner regions 101b, settle in an area in the third angle of the second diagonal setting domain 101c and fourth corner
Region 101d and remaining heating region 101e, wherein, the first diagonal and the second diagonal are arranged in a crossed manner, remaining heating zone
Domain 101e surrounds measured zone 10a.It is optional to be located at any corner region in the first corner regions 101a~fourth corner region 101d
The heating electrode 13 in domain has at least one opening 13b.
The symmetry of square heating region is high, the thermal uniformity of the corresponding measured zone inside square heating region
It is good, therefore square heating region is in the region that optional heating region 10b is limited in the present embodiment.Exist in heating region 10b and draw
Line export area 10c, lead export area 10c are not correspondingly arranged heating electrode 13, therefore extraction wire region 10c is not heated,
Thus the symmetry of heating region 10b may be destroyed, and then influences the thermal uniformity of measured zone 10a；And measured zone 10a
Thermal uniformity difference may cause the measurement accuracy of measuring electrode 12 low, the final performance for influencing MEMS device.
Based on this, positioned at the first corner regions 101a~fourth corner region of heating region 10b in the present embodiment
At least one opening 13b, the first corner regions of heating region 10b are set in 101d on the heating electrode 13 of any corner regions
101a~fourth corner region 101d is located at four corners of square heating region, by four corners of heating region 10b
Heating electrode 13 on set opening 13b that can increase the resistance of heating electrode 13 and increase four corners of heating region 10b
Heat dissipation capacity, and then make up the thermal uniformity of measured zone 10a, reach the measurement accuracy and stability for improving MEMS device
Effect.
It is optional in the present embodiment to be located at any corner regions in the first corner regions 101a~fourth corner region 101d
The opening 13b quantity for heating electrode 13 can be unequal, then the heating electrode 13 of non-equilibrium design can make up measured zone 10a's
Thermal uniformity.It should be noted that it is set in heating region 10b there are one complete heating electrode 13, positioned at any corner region
The heating electrode in domain is only referred to the electrode section positioned at corner regions of generation complete heating electrode 13, is not that will heat electrode
13 segmentations are independent multiple small electrodes.
The area of any corner regions occupies heating zone in optional first corner regions 101a~fourth corner region 101d
The 5%~50% of the overall area area of domain 10b and measured zone 10a.The area of four corner regions can phase in the present embodiment
Together can not also be same, such as the area of optional first corner regions 101a is 15%, the second corner regions 101b~fourth corner
The area of any corner regions is 20% in the 101d of region.It will be understood by those skilled in the art that the division of corner regions is only
It is a notional division, there is no the divisions carried out to heating region 10b in actual physical meaning.
In other alternative embodiments, the heating electrode 13 of also optional remaining heating region 101e has at least one opening
13b.It will be understood by those skilled in the art that the first corner regions 101a~fourth corner region 101d and residue are not limited
The opening 13b quantity of the heating electrode of any region in heating region 101e.Related practitioner is promoting measured zone 10a heat
Under the target of uniformity, the thermal uniformity of the measured zone 10a before opening 13b can be not provided with according to heating region 10b is reasonable
The opening 13b and the quantity for the 13b that is open being distributed in the heating electrode 13 of design heating region 10b, in the utility model not
Carry out concrete restriction.
In other alternative embodiments, the heating electrode 13 of also optional lead export area 10c faces with measured zone 10a
Near heating electrode 13 is respectively provided at least one opening 13b, can increase fever.It will be understood by those skilled in the art that simultaneously
The opening 13b quantity of the heating electrode of lead export area 10c is not limited.Related practitioner is promoting measured zone 10a heat
Under the target of uniformity, the opening 13b being distributed in the heating electrode 13 of lead export area 10c and opening can be rationally designed
The quantity of 13b, without concrete restriction in the utility model.
It should be noted that in addition to opening is set in electrode is heated, it can also bit selecting in other alternative embodiments
The line width of the heating electrode of any corner regions, which is less than, in the first corner regions~fourth corner region is located at remaining heating zone
The line width of the heating electrode in domain.Remaining heating zone is less than by the line width of the heating electrode in four corners for setting heating region
The line width of the heating electrode in domain, it is possible to increase the heat dissipation capacity in the resistance for heating electrode and four corners for increasing heating region, into
And the thermal uniformity of measured zone is made up, achieve the effect that the measurement accuracy and stability that improve MEMS device.Correlation from
Industry personnel can rationally design heating region in the case where promoting the target of measured zone thermal uniformity according to the thermal uniformity of measured zone
The line width of middle heating electrode, without concrete restriction in the utility model.
In the utility model embodiment, heat in electrode using setting opening and adjusting the design of line width, can effectively carry
The thermal uniformity of measured zone is risen, and finally promotes the overall performance of device.
Refering to what is shown in Fig. 6, a kind of flow chart of the manufacturing method of the MEMS micro-hotplates provided for the utility model embodiment,
The manufacturing method of the MEMS micro-hotplates is applicable to any one above-mentioned MEMS micro-hotplate, it can also be used to which manufacture is appointed in the prior art
It anticipates a kind of MEMS micro-hotplates.
With reference to shown in Fig. 1, the manufacturing method of MEMS micro-hotplates provided in this embodiment specifically comprises the following steps：
Step 110 provides a silicon-based substrate, and silicon-based substrate includes measured zone and heating region.Optional silicon-based substrate choosing
With 4 inches,<100>The monocrystalline silicon of 350 μm of crystal orientation and thickness.In other embodiments, related practitioner can be according to manufacture
The factors such as technique, working condition, product voluntarily choose rational silicon-based substrate, are not limited to the ginsengs such as above-mentioned size, crystal orientation and thickness
Number.
Step 120 forms the first dielectric layer on the upper surface of silicon-based substrate.It is optional to use Low Pressure Chemical Vapor Deposition
(LPCVD) the first dielectric layer of low stress is deposited respectively in the upper and lower surface of silicon-based substrate, optional first dielectric layer
Composition material be silicon nitride or silica, the stress of the first dielectric layer<200MPa, the thickness of the first dielectric layer for 500nm~
2000nm.In other embodiments, related practitioner can voluntarily choose according to factors such as manufacturing process, working condition, products
Rational first dielectric layer, is not limited to the parameters such as above-mentioned technique, material, stress and thickness.
Step 130 forms heating electrode and measuring electrode on the first dielectric layer, heats electrode and measuring electrode is exhausted with layer
Edge is set, and heating electrode is correspondingly arranged at heating region and measuring electrode is correspondingly arranged at measured zone.It is optional to use magnetic control
Sputtering method or electron-beam vapor deposition method deposit metal electrodes layer, and use photoresist photolithography patterning again stripping photoresist with graphical
Metal electrode layer forms measuring electrode and heating electrode, and optional measuring electrode and the composition material of heating electrode are metal platinum,
Optional thickness is 100nm~400nm.In other embodiments, related practitioner can be according to manufacturing process, working condition, production
The factors such as product voluntarily choose rational heating electrode and measuring electrode, are not limited to the parameters such as above-mentioned technique, material and thickness.
It should be noted that it refering to what is shown in Fig. 1, is also formed on the first dielectric layer and heating electrode and the same layer of measuring electrode
External connection pads 17, heating contact conductor and the measuring electrode lead of setting.
Step 140 forms the heat-insulated groove through silicon-based substrate in the lower surface of silicon-based substrate, and the slot bottom of heat-insulated groove exists
Heating region is covered on the direction of silicon-based substrate.The lower surface of the graphical silicon-based substrate of wet-etching technology can be used simultaneously
Etching forms heat-insulated groove.In other embodiments, also optional dry etch process is formed heat-insulated in the lower surface of silicon-based substrate
Groove.
Optional, the manufacturing method of MEMS micro-hotplates further includes：The is formed in film layer where heating electrode and measuring electrode
Two dielectric layers, the second dielectric layer are electric to expose measurement on the surface in region of corresponding measuring electrode and the flush of measuring electrode
The surface of pole.Subsequently sedimentary facies functional film layer can be answered to form required MEMS device on the second dielectric layer.It is optional to use PECVD
Depositing second dielectric layer, the composition material of optional second dielectric layer is silica, and then patterned oxide silicon is electric to expose measurement
Pole.
The manufacturing method of MEMS micro-hotplates provided in this embodiment, heats electrode and measuring electrode is used and set i.e. altogether with layer
Planar design, it is only necessary to deposit one layer of metal electrode layer and MEMS micro-hotplates can be completed using a metal patterning processes
Heat the manufacture of electrode and measuring electrode.Compared with prior art, the present embodiment reduces processing technology complexity, reduces system
It makes process and reduces manufacture cost, while heat electrode and measuring electrode to improve electrode using copline design
Manufacturing yield, and then improve the manufacturing yield of MEMS micro-hotplates.
Note that it above are only the preferred embodiment of the utility model and institute's application technology principle.Those skilled in the art's meeting
Understand, the utility model is not limited to specific embodiment described here, can carry out for a person skilled in the art various bright
Aobvious variation is readjusted, be combined with each other and substituted without departing from the scope of protection of the utility model.Therefore, although passing through
Above example is described in further detail the utility model, but the utility model be not limited only to more than implement
Example in the case where not departing from the utility model design, can also include other more equivalent embodiments, and the utility model
Scope is determined by scope of the appended claims.
Claims (9)
1. a kind of MEMS micro-hotplates, which is characterized in that including：
Silicon-based substrate, the silicon-based substrate include measured zone and heating region；
First dielectric layer, positioned at the upper surface of the silicon-based substrate；
Heat electrode and measuring electrode, the heating electrode and the measuring electrode are with layer insulation set and are respectively positioned on described first
On dielectric layer, the heating electrode is correspondingly arranged at the heating region and the measuring electrode is correspondingly arranged at the survey
Measure region；
Heat-insulated groove, positioned at the lower surface of the silicon-based substrate and through the silicon-based substrate and the slot of the heat-insulated groove
Bottom is covering the heating region on the direction of the silicon-based substrate.
2. MEMS micro-hotplates according to claim 1, which is characterized in that further include：
Second dielectric layer, on the heating electrode and measuring electrode place film layer and second dielectric layer exists
The surface in region and the flush of the measuring electrode of the measuring electrode are corresponded to expose the surface of the measuring electrode.
3. MEMS micro-hotplates according to claim 1, which is characterized in that the measuring electrode and the group of the heating electrode
It is metal platinum into material, the thickness of the measuring electrode and the heating electrode is 100nm~400nm.
4. MEMS micro-hotplates according to claim 1, which is characterized in that the heating region around the measured zone with
And the heating region includes lead export area, the measuring electrode lead of the measuring electrode draws from the lead export area
Go out.
5. MEMS micro-hotplates according to claim 4, which is characterized in that the heating region is divided into the first diagonal
The first corner regions and the second corner regions that set, the third angle set in the second diagonal settle in an area domain and fourth angle is settled in an area
Domain and remaining heating region, wherein, first diagonal and second diagonal are arranged in a crossed manner, the remaining heating
Region surrounds the measured zone.
6. MEMS micro-hotplates according to claim 5, which is characterized in that positioned at first corner regions~described 4th
The heating electrode of any corner regions has at least one opening in corner regions.
7. MEMS micro-hotplates according to claim 5, which is characterized in that positioned at first corner regions~described 4th
The line width of the heating electrode of any corner regions is less than the line for the heating electrode for being located at the remaining heating region in corner regions
It is wide.
8. MEMS micro-hotplates according to claim 5, which is characterized in that the heating electrode of the residue heating region has
At least one opening.
9. according to claim 5-8 any one of them MEMS micro-hotplates, which is characterized in that first corner regions~described
The area of any corner regions occupies the heating region and the overall area area of the measured zone in fourth corner region
5%~50%.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107381495A (en) * | 2017-08-14 | 2017-11-24 | 南方科技大学 | MEMS micro-hotplate and manufacturing method thereof |
| CN109561528A (en) * | 2018-12-13 | 2019-04-02 | 中国计量科学研究院 | Atomic air chamber heats chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6639566B2 (en) * | 2018-06-08 | 2020-02-05 | オムロン株式会社 | Micro hot plate and MEMS gas sensor |
| CN110655034A (en) * | 2018-06-29 | 2020-01-07 | 上海汽车集团股份有限公司 | Ceramic-based micro-hotplate and preparation method thereof |
| CN110655032B (en) * | 2018-06-29 | 2022-12-23 | 上海汽车集团股份有限公司 | Ceramic-based micro-hotplate with functional layer and preparation method thereof |
| CN112996745A (en) * | 2018-09-17 | 2021-06-18 | 应美盛股份有限公司 | Heater-integrated sensor |
| CN110040678B (en) * | 2019-04-18 | 2021-06-18 | 中国科学院上海微系统与信息技术研究所 | Micro sensor and preparation method thereof |
| CN110806432A (en) * | 2019-11-19 | 2020-02-18 | 清华大学 | Micro-hotplate and method for producing a micro-hotplate |
| CN113514498A (en) * | 2020-04-10 | 2021-10-19 | 中国石油化工股份有限公司 | Common-chip heating array type gas detection microchip and preparation method thereof |
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| CN101408595B (en) * | 2008-11-28 | 2011-06-29 | 清华大学 | Torsional pendulum type minitype magnetic sensor |
| WO2010140719A1 (en) * | 2009-06-02 | 2010-12-09 | 서울대학교산학협력단 | Micro calorimeter device with improved accuracy |
| CN102426176B (en) * | 2011-11-18 | 2013-03-27 | 南京工业大学 | Gas sensor and manufacturing process thereof |
| CN102730621B (en) * | 2012-06-15 | 2015-05-27 | 西安交通大学 | Silicon-based micro-heating plate provided with embedded heating wire, and processing method thereof |
| DE102015222072B4 (en) * | 2015-11-10 | 2019-03-28 | Robert Bosch Gmbh | Heating device for MEMS sensor |
| CN106053541B (en) * | 2016-08-25 | 2019-02-19 | 哈尔滨理工大学 | A kind of Al of ring heater2O3AlN ceramic micro-hotplate gas sensor |
| CN106226361A (en) * | 2016-08-31 | 2016-12-14 | 中国电子科技集团公司第四十九研究所 | A kind of board-like gas detecting element of novel slight fever |
| CN207375750U (en) * | 2017-08-14 | 2018-05-18 | 南方科技大学 | MEMS micro-heating plate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107381495A (en) * | 2017-08-14 | 2017-11-24 | 南方科技大学 | MEMS micro-hotplate and manufacturing method thereof |
| CN107381495B (en) * | 2017-08-14 | 2023-11-14 | 南方科技大学 | MEMS micro-hotplate and manufacturing method thereof |
| CN109561528A (en) * | 2018-12-13 | 2019-04-02 | 中国计量科学研究院 | Atomic air chamber heats chip |
| CN109561528B (en) * | 2018-12-13 | 2021-08-10 | 中国计量科学研究院 | Atomic air chamber heating chip |
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