CN207967050U - A kind of SiC thermocouple types high-temperature heat flux sensor - Google Patents
A kind of SiC thermocouple types high-temperature heat flux sensor Download PDFInfo
- Publication number
- CN207967050U CN207967050U CN201721869324.4U CN201721869324U CN207967050U CN 207967050 U CN207967050 U CN 207967050U CN 201721869324 U CN201721869324 U CN 201721869324U CN 207967050 U CN207967050 U CN 207967050U
- Authority
- CN
- China
- Prior art keywords
- sic
- film
- type sic
- thin
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000004907 flux Effects 0.000 title claims abstract description 28
- 239000010409 thin film Substances 0.000 claims abstract description 71
- 239000010408 film Substances 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 51
- 239000010703 silicon Substances 0.000 claims abstract description 51
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000002131 composite material Substances 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 238000005259 measurement Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 11
- 239000012530 fluid Substances 0.000 description 10
- 238000012546 transfer Methods 0.000 description 9
- 230000004044 response Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000035882 stress Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000005619 thermoelectricity Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 210000000170 cell membrane Anatomy 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- -1 H Enter Chemical class 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Micromachines (AREA)
Abstract
The utility model provides a kind of SiC thermocouple types high-temperature heat flux sensor, including：Silicon substrate has first surface and second surface, is equipped with groove on the first surface and surrounds the land regions formed by groove；Composite dielectric film, covering groove and land regions；Heat-insulated cavity is set in silicon substrate, is inwardly concaved by second surface, is located at below the part composite dielectric film of land regions；P-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks are located on the composite dielectric film of land regions position, and are partially located above heat-insulated cavity；Insulating medium layer covers p-type SiC thin-film electros stop block and N-type SiC thin-film electros stop block and composite dielectric film；Metal figure layer, is formed on insulating medium layer, including electrode and lead, connects p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks to form thermoelectric pile.The utility model use with excellent high temperature performance monocrystal SiC as thermoelectric material, it can be achieved that in high-temperature severe environment heat flow density quick, accurate measurement.
Description
Technical field
The utility model belongs to hot-fluid detection technique field, is sensed more particularly to a kind of SiC thermocouple types high-temperature heat flux
Device.
Background technology
In nature and production process, it there is a large amount of heat transfer.With the development of modern science and technology, only
Temperature is far from enough as the unique information of heat transfer.Therefore, hot-fluid etection theory and technology are more taken seriously, phase
The heat flow transducer answered also has obtained larger development and has been widely applied.
Though existing heat flow transducer disclosure satisfy that the general measure demand of heat flow density in workers and peasants' production and daily life,
But its heat resisting temperature and measuring range are generally relatively low, usually in 1000 DEG C and 1MW/m2Hereinafter, and its size it is larger, when response
Between longer, only ms magnitudes at the soonest.Therefore, in the superhigh temperature such as Aeronautics and Astronautics engine, the adverse circumstances of big hot-fluid
In, existing heat flow transducer is difficult to realize fast and accurately measure.
There is thermocouple type hot-fluid device using MEMS technology manufacture small, simple in structure, fast response time etc. to obtain
Its only thick advantage, but superelevation operating temperature, the problem of big hot-fluid are faced, the selection of material is particularly important.SiC is as a kind of width
Gap semiconductor has high-melting-point, high heat conductance, high carrier mobility and high-breakdown-voltage, is the reason of high temp sensitive device
Think material.It is developed based on the high temperature micro-heater and flow sensor of SiC at present, but the high-temperature heat flux based on SiC passes
Sensor not yet has been reported that.
4H-SiC monocrystal thin films materials are the higher materials of fusing point higher, thermal conductivity in SiC, can be by silicon based sensor
Operating temperature improves 2-3 times.Its high-temperature stability can be made full use of by manufacturing big hot-fluid device using 4H-SiC thermoelectric materials
Feature good, thermal conductivity is big realizes quickly heating and cooling while improving thermal stability.In addition, due to SiC and silicon
Coefficient of thermal expansion difference is little, though at high temperature, boundary layer by thermal stress influenced the very little that remains unchanged, to make it super
Application in hot environment is possibly realized.
Therefore, no matter from industrial production demand or technology trends, a kind of quick response is developed, performance is stablized
SiC thermocouple type high-temperature heat flux sensors have great importance.
Utility model content
In view of prior art described above, the purpose of this utility model is to provide a kind of SiC thermocouple types high-temperature heat fluxes
Sensor, for realizing quick, the accurate measurement of heat flow density in the high-temperature severe environments such as aerospace, metallurgy.
In order to achieve the above objects and other related objects, the utility model provides a kind of SiC thermocouple types high-temperature heat flux biography
Sensor, including：
Silicon substrate, the silicon substrate have first surface and second surface, on the first surface be equipped with groove and
The land regions formed are surrounded by the groove；
Composite dielectric film is located at the first surface of the silicon substrate, covers the flute surfaces and the land regions table
Face；
Heat-insulated cavity is set in the silicon substrate, is inwardly concaved by the second surface of the silicon substrate, is located at the platform
The lower section of the part composite dielectric film in region；
P-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks are located at the complex media of the land regions position
On film, and it is partially located at the top of the heat-insulated cavity；
Insulating medium layer covers the p-type SiC thin-film electros stop block and N-type SiC thin-film electros stop block and the complex media
Film；
Metal figure layer is formed on the insulating medium layer, including electrode and lead, by the p-type SiC film resistors
Block and N-type SiC thin-film electro stop blocks connect to form thermoelectric pile.
Optionally, the silicon substrate is double throwing monocrystalline silicon pieces.
Optionally, the depth of the groove is 1-50 μm.
Optionally, the composite dielectric film is combined by the silica and silicon nitride of single-layer or multi-layer, and thickness is 1-10 μ
m。
Optionally, the heat-insulated cavity runs through the silicon substrate, exposes the part composite dielectric film；The heat-insulation chamber
Body has rectangle or trapezoid cross section.
Optionally, the material of the p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks is selected from 4H-SiC, 6H-
One kind in SiC, 3C-SiC；The thickness of the p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks is less than 1 μm, and thickness is inclined
Difference is no more than 3%.
Optionally, the material of the insulating medium layer includes the one or two of silica, silicon nitride.
Optionally, the material of the metal figure layer is one or more in titanium, tungsten, platinum.
As described above, the SiC thermocouple type high-temperature heat flux sensors of the utility model, have the advantages that：
1. the utility model can be used MEMS technology manufacture hot-fluid device, have it is small, fast response time etc. day it is only
Thick advantage, while using simple thermoelectricity occasionally thermoelectric pile sensitive structure, preparation process is simple, and controllability is strong, with it is existing at
Ripe silicon-based semiconductor technique has good compatibility；
2. the utility model uses the monocrystal SiC with excellent high temperature performance as thermoelectric material, P-SiC/N-SiC is manufactured
Thermoelectric pile establishes low stress support film using silicon-based semiconductor technique, reduces device under conditions of meeting high-temperature stability
Thermal capacitance, reduce the response time of device, while increasing the temperature difference of thermoelectric pile hot junction and cold end, to conducive to realize the big heat of high temperature
Flow quick, the accurate measurement of heat flow density under environment.
Description of the drawings
Fig. 1 is shown as a kind of section knot of SiC thermocouple types high-temperature heat flux sensor of the utility model embodiment offer
Structure schematic diagram.
Fig. 2 a-2b are shown as a kind of the vertical of SiC thermocouple types high-temperature heat flux sensor of the utility model embodiment offer
Body structural schematic diagram, wherein Fig. 2 b are the layering schematic diagram of Fig. 2 a.
Fig. 3 a-3b are shown as another SiC thermocouple types high-temperature heat flux sensor of the utility model embodiment offer
Dimensional structure diagram, wherein Fig. 3 b are the layering schematic diagram of Fig. 3 a.
Fig. 4 is shown as a kind of preparation side of SiC thermocouple types high-temperature heat flux sensor of the utility model embodiment offer
Method flow chart.
Fig. 5 a-5f are shown as a kind of system of SiC thermocouple types high-temperature heat flux sensor of the utility model embodiment offer
Standby process schematic representation.
Component label instructions
10 silicon substrates
101 grooves
102 land regions
103 heat-insulated cavitys
20 composite dielectric films
30 SiC thin-film electro stop blocks
301 p-type SiC thin-film electro stop blocks
302 N-type SiC thin-film electro stop blocks
40 insulating medium layers
401 fairleads
50 metal figure layers
Each steps of S1~S6
Specific implementation mode
Illustrate that the embodiment of the utility model, those skilled in the art can be by this theorys below by way of specific specific example
Content disclosed by bright book understands other advantages and effect of the utility model easily.The utility model can also be by addition
Different specific implementation modes are embodied or practiced, and the various details in this specification can also be based on different viewpoints and answer
With carrying out various modifications or alterations under the spirit without departing from the utility model.It should be noted that the case where not conflicting
Under, the feature in following embodiment and embodiment can be combined with each other.
It should be noted that the diagram provided in following embodiment only illustrates the basic of the utility model in a schematic way
Conception, component count, shape when only display is with related component in the utility model rather than according to actual implementation in schema then
And size is drawn, when actual implementation kenel, quantity and the ratio of each component can be a kind of random change, and its assembly layout
Kenel may also be increasingly complex.
Referring to Fig. 1, the present embodiment provides a kind of SiC thermocouple types high-temperature heat flux sensors, including：Silicon substrate 10 is answered
Close deielectric-coating 20, heat-insulated cavity 103, SiC thin-film electros stop block 30, insulating medium layer 40, metal figure layer 50.
The silicon substrate 10 have first surface and second surface, on the first surface be equipped with groove 101 and by
The groove 101 is around the land regions 102 formed；The composite dielectric film 20 is located at the first surface of the silicon substrate 10,
Cover 102 surface of 101 surface of the groove and the land regions；The heat-insulated cavity 103 is set in the silicon substrate 10, by
The second surface of the silicon substrate 10 inwardly concaves, and is located under the part composite dielectric film 20 of the land regions 102
Side；The SiC thin-film electros stop block 30 includes p-type SiC thin-film electros stop block 301 and N-type SiC thin-film electros stop block 302, as thermoelectric pile
Galvanic couple material；The SiC thin-film electros stop block 30 is located on the composite dielectric film 20 of 102 position of the land regions, and office
Portion is located at the top of the heat-insulated cavity 103；The insulating medium layer 40 covers the SiC thin-film electros stop block 30 and described multiple
Close the surface of deielectric-coating 20；The metal figure layer 50 is formed on the insulating medium layer 40, including electrode and lead, by institute
It states p-type SiC thin-film electros stop block 301 and the connection of N-type SiC thin-film electros stop block 302 forms thermoelectric pile.
Specifically, the silicon substrate 10 can be double throwing monocrystalline silicon pieces.
Specifically, the depth of the groove 101 can be 1-50 μm, and in the present embodiment, the depth of the groove 101 is 10
μm。
Specifically, the composite dielectric film 20 can be combined by single-layer or multi-layer low stress silica and silicon nitride,
Thickness can be 1-10 μm.In the present embodiment, the composite dielectric film 20 is by low stress silicon oxide/silicon nitride/silicon oxide/nitridation
Four tunic of silicon is combined, and thickness is 3.2 μm.
Specifically, the material of the SiC thin-film electros stop block 30 includes but not limited in 4H-SiC, 6H-SiC, 3C-SiC
One kind, thickness are less than 1 μm, and thickness deviation is no more than 3%.In the present embodiment, the SiC thin-film electros stop block 30 is using 0.8 μ of thickness
The 4H-SiC thin-film materials of m.
Specifically, the material of the insulating medium layer 40 includes the one or two of silica, silicon nitride.In the present embodiment
In, the insulating medium layer 40 uses thickness for 0.1 μm of silicon nitride.
Specifically, the material selection of the metal figure layer 50 is provided simultaneously with satisfactory electrical conductivity and the metal of higher melt, packet
It includes but is not limited to and is in titanium, tungsten, platinum one or more.In the present embodiment, the metal figure layer 50 is adopted as titanium tungsten.
As a preferred embodiment of the present embodiment, the heat-insulated cavity 103 can run through the silicon substrate 10, expose portion
Divide the composite dielectric film 20, to form hanging film sensitive structure.Specifically, the heat-insulated cavity 103 can have rectangle or
Trapezoid cross section.In the present embodiment, the heat-insulated cavity 103 is a cylinder, has rectangular section.
It should be noted that the p-type SiC thin-film electros stop block 301 and N-type SiC thin-film electros stop block 302 pass through metal lead wire
P-SiC/N-SiC thermocouples are connected into, multiple P-SiC/N-SiC thermocouples connect to form P-SiC/N-SiC thermopile structures, institute
The number for stating P-SiC/N-SiC thermocouples is at least 1, and in the present embodiment, the number of the P-SiC/N-SiC thermocouples is 2
Or 5.
Fig. 2 a-2b and Fig. 3 a-3b respectively illustrate two kinds of different SiC thermoelectricity of thermocouple quantity provided in this embodiment
Heap-type high-temperature heat flux sensor stereochemical structure.
SiC thermocouple types high-temperature heat flux sensor shown in Fig. 2 a-2b includes silicon substrate 10, compound Jie on silicon substrate 10
Plasma membrane 20, and two thermocouples being formed by connecting by 4 SiC thin-film electros stop blocks 30, and two thermocouples connect to form thermoelectricity
Pile structure.Wherein, 4 SiC thin-film electros stop blocks 30 are set to 102 top of land regions of silicon substrate 10, are uniformly distributed, by lead
501 connections, electrode 502 are set in groove 101 (in order to make it easy to understand, insulating medium layer is omitted in figure).Land regions 102
Outer profile uses rectangle.Heat-insulated cavity 103 uses cylinder, is set to the center of land regions 102, makes SiC thin-film electros stop block 30
Be partially located at the top of heat-insulated cavity 103.
SiC thermocouple types high-temperature heat flux sensor shown in Fig. 3 a-3b includes by 10 SiC thin-film electros stop blocks 30 (i.e. 5
P-type SiC thin-film electros stop block 301 and 5 N-type SiC thin-film electros stop blocks 302) five thermocouples being formed by connecting, and five thermocouples
Series connection forms thermopile structure.Wherein, 10 SiC thin-film electros stop blocks 30 are set to 102 top of land regions of silicon substrate 10, uniformly
Distribution, is connected by lead 501, and electrode 502 is set in groove 101 (in order to make it easy to understand, being not drawn into insulating medium layer in figure).It is flat
The outer profile in taiwan area domain 102 is using round.Heat-insulated cavity 103 uses cylinder, is set to the center of land regions 102, keeps SiC thin
Film resistance block 30 is partially located at 103 top of heat-insulated cavity.
The operation principle of above-mentioned SiC thermocouple types high-temperature heat flux sensor is：The hanging sensitive area of composite dielectric film 20 is inhaled
Heat is received, heat is flowed along its radial direction rapidly, forms temperature gradient.By the centrally disposed heat for thermoelectric pile of hanging sensitive area
Pole, silicon substrate 10 regard the cold pole of thermoelectric pile as, in this way, the strong and weak of incident hot-fluid can be straight by the size of thermoelectric pile output potential
Connect measurement.In order to improve the heat absorption rate of sensitive area, it is ensured that the sensitivity of output signal can apply black on sensitive area surface and inhale
Material is received, the effect for fully absorbing heat and improving intensity is may also reach up.
In addition, the present embodiment also provides a kind of preparation method of SiC thermocouple types high-temperature heat flux sensor, as shown in figure 4,
Include the following steps：
S1 provides a silicon substrate with first surface and second surface, and etching groove on the first surface, shape
At land regions made of being surrounded by the groove；
S2 forms composite dielectric film in the first surface, and the composite dielectric film covers flute surfaces and described flat
Taiwan area field surface；
S3 forms p-type SiC thin-film electros stop block and N-type SiC films in the complex media film surface of the land regions
Resistance bolck；
S4 forms insulating medium layer in the p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks surface, and described
Fairlead is formed on insulating medium layer, to expose the part p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks；
S5 is in the metal figure layer that the insulating medium layer and lead hole surface formation include electrode and lead, by institute
It states p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks connects into thermoelectric pile；
S6 etches to form heat-insulated cavity in the second surface of the silicon substrate, and the heat-insulation chamber body is located at the land regions
The part composite dielectric film below, and make being partially located at for the p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks
The top of the heat-insulated cavity.
Above-mentioned preparation method is further described with reference to Fig. 5 a-5f.
First, as shown in Figure 5 a, step S1 is executed, providing one has first surface and second surface (i.e. front and back)
Silicon substrate 10, using photoetching process in the substrate 10 first surface (front) formed etching window, pass through the etching
Window performs etching the silicon substrate 10, forms the groove 101 of predetermined depth, and made of being surrounded by the groove 101
Land regions 102.
Specifically, the silicon substrate 10 throws monocrystalline silicon piece using double.Anisotropic wet is used when discharging heat-insulated cavity 103
When corrosion, the silicon substrate 10 is (100) crystal orientation, is carved using isotropism wet etching or dry method when discharging heat-insulated cavity 103
When erosion, the silicon substrate 10 is without crystal orientation requirement；In the present embodiment, the silicon substrate 10 is (100) double throwing monocrystalline silicon pieces.
Specifically, the etching window includes but not limited to rectangle, circular one kind, and then the land regions 102 formed
Outer profile include but not limited to rectangle, circular one kind；In the present embodiment, the outer profile of gained land regions 102 is square
Shape (as illustrated in figures 2 a-2b) is round (as shown in Figure 3 a-3b).
Specifically, deep reaction ion etching (DRIE) can be used and form the groove 101, the depth of the groove 101 is
1-50 μm, in the present embodiment, the depth of the groove 2 is 10 μm.
Then, as shown in Figure 5 b, step S2 is executed, it is compound in one layer of 10 surface of silicon substrate deposition for foring groove 101
Deielectric-coating 20, the composite dielectric film 20 cover 102 surface of 101 surface of the groove and the land regions.Compound Jie
Plasma membrane 20 can be combined by single-layer or multi-layer silica and silicon nitride, and thickness is 1-10 μm；In the present embodiment, described multiple
It closes deielectric-coating 20 to be combined by low stress silicon oxide/silicon nitride/silicon oxide/four tunic of silicon nitride, thickness is 3.2 μm.It is formed
The methods of thermal oxide, low-pressure chemical vapor deposition (LPCVD) can be used in the composite dielectric film 20.
Next, as shown in Figure 5 c, executing step S3, is formed in 20 surface of the composite dielectric film and be used as thermoelectric pile galvanic couple
The SiC thin-film electros stop block 30 of material, including p-type SiC thin-film electros stop block 301 and N-type SiC thin-film electros stop block 302.
As a kind of preferred embodiment of the present embodiment, the p-type SiC thin-film electros stop block 301 and N-type SiC thin-film electros are formed
Stop block 302 can specifically include following steps：
One layer of SiC film is shifted prior to 20 surface of the composite dielectric film, by photoetching process in the SiC film surfaces
The first, second window is successively formed, using photoresist as mask layer, p-type, n-type doping, figure are carried out to the SiC films
Change the SiC films, anneal, forms p-type SiC thin-film electros stop block 301 and N-type SiC thin-film electros stop block 302.
As another preferred embodiment of the present embodiment, the p-type SiC thin-film electros stop block 301 and N-type SiC films are formed
Resistance bolck 302 can specifically include following steps：
One SiC substrate is provided, the first, second window is successively formed on the SiC substrate surface by photoetching process, is utilized
Photoresist carries out p-type, n-type doping as mask layer, to the SiC substrate, and the SiC films on the SiC substrate are shifted in annealing
Onto the composite dielectric film 20, and the graphical SiC films, form p-type SiC thin-film electros stop block 301 and N-type SiC films
Resistance bolck 302.
Wherein it is possible to which the method using ion implanting is doped the SiC films or SiC substrate；Using induction coupling
Plasma etching (ICP) is closed to be patterned the SiC films；Using ion beam stripping and the method transfer of substrate transfer
SiC films.The material of the SiC films or SiC substrate includes but not limited to one kind of 4H-SiC, 6H-SiC, 3C-SiC.Transfer
SiC films thickness be less than 1 μm, thickness deviation be no more than 3%；In the present embodiment, the SiC films are using 0.8 μm thick
4H-SiC.
It should be noted that the physical essence of the ion beam stripping and substrate transfer is noted by the light elements ion such as H
Enter, forms bubble and hole rich in injection ion at the certain depth of SiC single crystal substrate, and form stripping defect layer.
In heating process, injecting the expansion of gas makes surface layer SiC films be detached from single crystalline substrate, and will be shelled by wafer bonding
From SiC films be transferred in silicon-based substrate.
It should be noted that ion beam stripping and substrate transfer technology can reduce the preparation process temperature of material, it is convenient
It realizes the preparation of SiC films and integrating for silicon-based substrate, at the same time, there is SiC body materials by the film that this method is formed
The monocrystalline quality of material, and SiC bodies monocrystalline can reduce material cost with recirculation gas stripper film.
Next, as fig 5d, executing step S4, insulating medium layer is formed in 30 surface of SiC thin-film electros stop block
40, photoetching simultaneously etches the insulating medium layer 40, exposes the part SiC thin-film electros stop block 30, forms fairlead 401.Tool
Body, plasma enhanced chemical vapor deposition (PECVD) can be used and form the insulating medium layer 40, the insulating medium layer
40 include the one or two of silica, silicon nitride；In the present embodiment, the insulating medium layer 40 uses thickness for 0.1 μm
Silicon nitride.
Then, as depicted in fig. 5e, step S5 is executed, is deposited in the insulating medium layer 40 and 401 surface of the fairlead
And graphical one layer of metal, as the lead 501 and electrode 502 between the SiC thin-film electros stop block 30, i.e. metal figure layer 50.
The p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks are connected into the occasionally multiple thermocouples of 1 thermoelectricity by lead 501；Institute
It states multiple thermocouples and is connected into thermopile structure, in the present embodiment, the number of P-SiC/N-SiC thermocouples is 2 or 5.
Specifically, stripping technology may be used or electroplating technology is formed and the graphical metal, the metal needs are simultaneously
Has good electric conductivity and higher fusing point, including but not limited to one or more of titanium, tungsten, platinum；In the present embodiment,
It is formed using stripping technology and the graphical metal, the metal is titanium tungsten.
Specifically, the step of stripping technology is：Glue spraying, lithographic definition go out the figure of metal lead wire 501 and electrode 502
Shape, photoresist thickness are 1~10 μm；Titanium tungsten is sputtered, thickness is 0.2~2 μm；Acetone ultrasonic depolymerization.
Finally, as shown in figure 5f, step S6 is executed, release window is formed in 10 back side of the silicon substrate, is released by described
It puts window to perform etching the silicon substrate 103 from the back side, release obtains heat-insulated cavity 103, completes SiC thermocouple type high warm
The preparation of flow sensor.
Specifically, using a kind of release institute in anisotropic wet burn into isotropism wet etching or dry etching
Heat-insulated cavity 103 is stated, the heat-insulated cavity 103 runs through the silicon substrate 10, and the exposure composite dielectric film 20 forms hanging film
Sensitive structure, and there is rectangle or trapezoid cross section；In the present embodiment, using deep reaction ion etching (DRIE) release it is described every
Hot cavity 103, the heat-insulated cavity 103 are a cylinder, have rectangular section.
In conclusion SiC thermocouple type high-temperature heat flux sensors of the utility model and preparation method thereof use MEMS skills
Art manufactures hot-fluid device, has small, the advantageous advantage such as fast response time, while sensitive using simple thermoelectric pile
Structure, preparation process is simple, and controllability is strong, has good compatibility with the silicon-based semiconductor technique of existing maturation；By from
Beamlet, which is removed, reduces the preparation process temperature of material with transfer techniques, facilitates the preparation for realizing SiC single crystal film and silicon substrate
Substrate integrates, and at the same time, this method also has following two points advantage：1) film of ion implanting stripping transfer has SiC
The monocrystalline quality of body material；2) SiC bodies monocrystalline can reduce material cost with recirculation gas stripper film；The utility model, which uses, to be had
The monocrystal SiC of excellent high temperature performance manufactures P-SiC/N-SiC thermoelectric piles, in the item for meeting high-temperature stability as thermoelectric material
Under part, low stress support film is established using silicon-based semiconductor technique, reduces the thermal capacitance of device, reduces the response time of device,
Increase the temperature difference of thermoelectric pile hot junction and cold end simultaneously, to conducive to realizing the quick, smart of heat flow density under the big hot-fluid environment of high temperature
Really measure.
So the utility model effectively overcomes various shortcoming in the prior art and has high industrial utilization.
The above embodiments are only illustrative of the principle and efficacy of the utility model, new not for this practicality is limited
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
All equivalent modifications completed under refreshing and technological thought or change, should be covered by the claim of the utility model.
Claims (7)
1. a kind of SiC thermocouple types high-temperature heat flux sensor, which is characterized in that including：
Silicon substrate, the silicon substrate have first surface and second surface, are equipped with groove on the first surface and by institute
It states groove and surrounds the land regions formed；Wherein, the silicon substrate is double throwing monocrystalline silicon pieces；
Composite dielectric film is located at the first surface of the silicon substrate, covers the flute surfaces and the land regions surface；
Heat-insulated cavity is set in the silicon substrate, is inwardly concaved by the second surface of the silicon substrate, is located at the land regions
The part composite dielectric film lower section；
P-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks are located at the composite dielectric film of the land regions position
On, and it is partially located at the top of the heat-insulated cavity；
Insulating medium layer covers the p-type SiC thin-film electros stop block and N-type SiC thin-film electros stop block and the composite dielectric film；
Metal figure layer is formed on the insulating medium layer, including electrode and lead, by the p-type SiC thin-film electros stop block and
N-type SiC thin-film electro stop blocks connect to form thermoelectric pile.
2. SiC thermocouple types high-temperature heat flux sensor according to claim 1, it is characterised in that：The depth of the groove
It is 1-50 μm.
3. SiC thermocouple types high-temperature heat flux sensor according to claim 1, it is characterised in that：The composite dielectric film
It is combined by the silica and silicon nitride of single-layer or multi-layer, thickness is 1-10 μm.
4. SiC thermocouple types high-temperature heat flux sensor according to claim 1, it is characterised in that：The heat-insulated cavity passes through
The silicon substrate is worn, the part composite dielectric film is exposed；The heat-insulated cavity has rectangle or trapezoid cross section.
5. SiC thermocouple types high-temperature heat flux sensor according to claim 1, it is characterised in that：The p-type SiC films
The one kind of the material of resistance bolck and N-type SiC thin-film electro stop blocks in 4H-SiC, 6H-SiC, 3C-SiC；The p-type SiC is thin
The thickness of film resistance block and N-type SiC thin-film electro stop blocks is less than 1 μm, and thickness deviation is no more than 3%.
6. SiC thermocouple types high-temperature heat flux sensor according to claim 1, it is characterised in that：The insulating medium layer
Material include silica, silicon nitride one or two.
7. SiC thermocouple types high-temperature heat flux sensor according to claim 1, it is characterised in that：The metal figure layer
Material is one or more in titanium, tungsten, platinum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721869324.4U CN207967050U (en) | 2017-12-27 | 2017-12-27 | A kind of SiC thermocouple types high-temperature heat flux sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721869324.4U CN207967050U (en) | 2017-12-27 | 2017-12-27 | A kind of SiC thermocouple types high-temperature heat flux sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207967050U true CN207967050U (en) | 2018-10-12 |
Family
ID=63730131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721869324.4U Active CN207967050U (en) | 2017-12-27 | 2017-12-27 | A kind of SiC thermocouple types high-temperature heat flux sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207967050U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108011030A (en) * | 2017-12-27 | 2018-05-08 | 中国科学院上海微系统与信息技术研究所 | A kind of SiC thermocouple types high-temperature heat flux sensor and preparation method thereof |
| CN112750939A (en) * | 2019-10-31 | 2021-05-04 | 新唐科技股份有限公司 | Semiconductor device and method for manufacturing the same |
-
2017
- 2017-12-27 CN CN201721869324.4U patent/CN207967050U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108011030A (en) * | 2017-12-27 | 2018-05-08 | 中国科学院上海微系统与信息技术研究所 | A kind of SiC thermocouple types high-temperature heat flux sensor and preparation method thereof |
| CN108011030B (en) * | 2017-12-27 | 2019-12-17 | 中国科学院上海微系统与信息技术研究所 | SiC thermopile type high-temperature heat flow sensor and preparation method thereof |
| CN112750939A (en) * | 2019-10-31 | 2021-05-04 | 新唐科技股份有限公司 | Semiconductor device and method for manufacturing the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108011030A (en) | A kind of SiC thermocouple types high-temperature heat flux sensor and preparation method thereof | |
| CN101776483B (en) | Non-refrigerant thermopile infrared detector and manufacturing method thereof | |
| CN101575083B (en) | Micromachined thermopile infrared detector | |
| CN207375750U (en) | MEMS micro-heating plate | |
| CN108007580A (en) | High-temperature heat flux sensor based on SiC thermoelectric materials and preparation method thereof | |
| CN106017696B (en) | Thermal resistance thin film thermoelectric heap-type transient heat flow meter and preparation method | |
| CN105675160B (en) | The W-Re film thermocouple sensor and preparation method of the group of film containing high temperature protection | |
| CN101289160B (en) | 0-100Pa monolithic silicon based SOI high-temperature low drift micropressure sensor and processing method thereof | |
| US20150168221A1 (en) | Black silicon-based high-performance mems thermopile ir detector and fabrication method | |
| CN101290255B (en) | Preparing method of 0-50pa single slice silicon based SOI ultra-low micro pressure sensor | |
| US11686637B2 (en) | Silicon carbide-based combined temperature-pressure micro-electro-mechanical system (MEMS) sensor chip and preparation method thereof | |
| CN207967050U (en) | A kind of SiC thermocouple types high-temperature heat flux sensor | |
| CN112461312B (en) | Thermal reactor type gas mass flow sensor and manufacturing method thereof | |
| CN110146136A (en) | Thermal reactor type gas mass flow rate sensors and preparation method thereof | |
| CN112484800B (en) | Thermal reactor type gas mass flow sensor and preparation method thereof | |
| CN208270086U (en) | High-temperature heat flux sensor based on SiC thermoelectric material | |
| CN101515002A (en) | Thin film type thermoelectric converter and a measuring method | |
| CN108287027A (en) | A kind of film-type superhigh temperature heat flow transducer sensitivity member and preparation method thereof | |
| Modarres-Zadeh et al. | High-responsivity thermoelectric infrared detectors with stand-alone sub-micrometer polysilicon wires | |
| CN105526983B (en) | A kind of structure and its manufacturing method of gas flow sensor | |
| CN112938892B (en) | Porous silicon heat insulation supported high-temperature heat flow sensor and preparation method thereof | |
| CN111982323B (en) | Thermopile type high-temperature heat flow sensor and preparation method thereof | |
| CN103496665A (en) | Pressure, flow and temperature integrated chip and method for manufacturing same | |
| CN105174200B (en) | The structure of a kind of New Resonance Type film thermoelectric converter and manufacture method | |
| CN106629577B (en) | MEMS infrared light source and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |