CN108007580A - High-temperature heat flux sensor based on SiC thermoelectric materials and preparation method thereof - Google Patents
High-temperature heat flux sensor based on SiC thermoelectric materials and preparation method thereof Download PDFInfo
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- 230000004907 flux Effects 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- 239000010409 thin film Substances 0.000 claims abstract description 101
- 239000010408 film Substances 0.000 claims abstract description 97
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 claims abstract description 66
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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- Physics & Mathematics (AREA)
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- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Measuring Volume Flow (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
The present invention provides a kind of high-temperature heat flux sensor based on SiC thermoelectric materials and preparation method thereof, including：SiC substrate, has first surface and second surface, and first surface is equipped with groove and surrounds the land regions formed by groove；Composite dielectric film, covering groove and land regions；Heat-insulated cavity, in SiC substrate, is inwardly concaved by second surface, below the part composite dielectric film of land regions；P-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks, on the composite dielectric film of land regions, and are partially located above heat-insulated cavity；Insulating medium layer, covers p-type SiC thin-film electros stop block and N-type SiC thin-film electros stop block and composite dielectric film；Metal figure layer, is formed on insulating medium layer, including electrode and lead, and p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks are connected to form thermoelectric pile.The present invention using with excellent high temperature performance monocrystal SiC as thermoelectric material, it can be achieved that in high-temperature severe environment heat flow density quick, accurate measurement.
Description
Technical field
The invention belongs to hot-fluid detection technique field, is passed more particularly to a kind of high-temperature heat flux based on SiC thermoelectric materials
Sensor and preparation method thereof.
Background technology
In nature and production process, it there is substantial amounts of heat transfer.With the development of modern science and technology, only
Temperature is far from enough as the unique information of heat transfer.Therefore, hot-fluid etection theory and technology are taken seriously all the more, phase
The heat flow transducer answered also has obtained larger development and has been widely applied.
Though existing heat flow transducer disclosure satisfy that the general measure demand of heat flow density in workers and peasants' production and daily life,
But its heat resisting temperature and measuring range are generally relatively low, usually in 1000 DEG C and 1MW/m2Hereinafter, and its size is larger, during response
Between longer, only ms magnitudes at the soonest.Therefore, in the superhigh temperature such as Aeronautics and Astronautics engine, the adverse circumstances of big hot-fluid
In, existing heat flow transducer is difficult to realize fast and accurately measure.
There is thermocouple type hot-fluid device using MEMS technology manufacture small, simple in structure, fast response time etc. to obtain
It is particularly important that its solely thick advantage, but face superelevation operating temperature, the problem of big hot-fluid, the selection of material.SiC is as a kind of wide
Gap semiconductor, has high-melting-point, high heat conductance, high carrier mobility and high-breakdown-voltage, is the reason of high temp sensitive device
Think material.The high temperature micro-heater and flow sensor of SiC have been developed based at present, but the high-temperature heat flux based on SiC passes
Sensor not yet has been reported that.
4H-SiC monocrystal thin films materials are fusing point higher in SiC, the material of thermal conductivity higher, using 4H-SiC thermoelectric materials
The characteristics of its high-temperature stability is good, thermal conductivity is big can be made full use of by manufacturing big hot-fluid device, real while heat endurance is improved
Now quickly heating and cooling, so that its application in hyperthermal environments is possibly realized.
Therefore, no matter from industrial production demand or technology trends, a kind of quick response is developed, the base that performance is stablized
Have great importance in the high-temperature heat flux sensor of SiC thermoelectric materials.
The content of the invention
The prior art in view of the above, it is an object of the invention to provide a kind of high warm based on SiC thermoelectric materials
Flow sensor and preparation method thereof, is used for realization the quick, accurate of heat flow density in the high-temperature severe environments such as aerospace, metallurgy
Measurement.
In order to achieve the above objects and other related objects, the present invention provides a kind of high-temperature heat flux based on SiC thermoelectric materials
Sensor, including：
SiC substrate, the SiC substrate have first surface and second surface, on the first surface equipped with groove with
And the land regions formed are surrounded by the groove；
Composite dielectric film, positioned at the first surface of the SiC substrate, covers the flute surfaces and the land regions table
Face；
Heat-insulated cavity, in the SiC substrate, is inwardly concaved by the second surface of the SiC substrate, positioned at described flat
The lower section of the part composite dielectric film in taiwan area domain；
P-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks, the complex media positioned at the land regions position
On film, and it is partially located at the top of the heat-insulated cavity；
Insulating medium layer, covers the p-type SiC thin-film electros stop block and N-type SiC thin-film electros stop block and the complex media
Film；
Metal figure layer, is formed on the insulating medium layer, including electrode and lead, by the p-type SiC film resistors
Block and N-type SiC thin-film electro stop blocks connect to form thermoelectric pile.
Alternatively, the one kind of the material of the SiC substrate in 4H-SiC, 6H-SiC, 3C-SiC.
Alternatively, the depth of the groove is 1-50 μm.
Alternatively, the composite dielectric film is combined by the silica and silicon nitride of single or multiple lift, and thickness is 1-10 μ
m。
Alternatively, the heat-insulated cavity runs through the SiC substrate, exposes the part composite dielectric film；It is described heat-insulated
Cavity has rectangular section.
Alternatively, the material of the p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks is selected from 4H-SiC, 6H-
One kind in SiC, 3C-SiC；The thickness of the p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks is less than 1 μm, and thickness is inclined
Difference is no more than 3%.
Alternatively, the material of the insulating medium layer includes silica, the one or two of silicon nitride.
Alternatively, one or more of the material of the metal figure layer in titanium, tungsten, platinum.
In order to achieve the above objects and other related objects, the present invention also provides a kind of high warm based on SiC thermoelectric materials
The preparation method of flow sensor, includes the following steps：
1) providing one has the SiC substrate of first surface and second surface, and etching groove on the first surface, shape
The land regions formed are surrounded into by the groove；
2) composite dielectric film is formed in the first surface, the composite dielectric film covers flute surfaces and described flat
Taiwan area field surface；
3) p-type SiC thin-film electros stop block and N-type SiC films are formed in the complex media film surface of the land regions
Resistance bolck；
4) insulating medium layer is formed in the p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks surface, and described
Fairlead is formed on insulating medium layer, to expose the part p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks；
5) the metal figure layer of electrode and lead is included in the insulating medium layer and lead hole surface formation, by institute
State p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks connect into thermoelectric pile；
6) etch to form heat-insulated cavity in the second surface of the SiC substrate, the heat-insulation chamber body is located at the platform area
Below the part composite dielectric film in domain, and make the local position of the p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks
In the top of the heat-insulated cavity.
Alternatively, in step 1), the one kind of the material of the SiC substrate in 4H-SiC, 6H-SiC, 3C-SiC.
Alternatively, in step 1), formed using sense coupling (ICP) by chemical wet etching window described
Groove；The depth of the groove is 1-50 μm.
Alternatively, in step 2), using one or both of thermal oxide, low-pressure chemical vapor deposition (LPCVD) side
Method forms the composite dielectric film；The composite dielectric film is combined by the silica and silicon nitride of single or multiple lift, thickness
For 1-10 μm.
Alternatively, in step 3), forming the method for the p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks includes
Following steps：
One layer of SiC film is shifted in the complex media film surface；
P-type doping and n-type doping are carried out to the SiC films as mask layer using photoresist；
The graphical SiC films；
Annealing is carried out to the patterned SiC films and forms p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks.
Still optionally further, peeled off using ion beam and the method for substrate transfer shifts the SiC films；The SiC is thin
The one kind of the material of film in 4H-SiC, 6H-SiC, 3C-SiC；The thickness of the SiC films is less than 1 μm, thickness deviation
No more than 3%.
Still optionally further, p-type doping and n-type doping are carried out to the SiC films using the method for ion implanting；Using
Sense coupling (ICP) is patterned the SiC films.
Alternatively, in step 4), using plasma enhancing chemical vapor deposition (PECVD) forms the dielectric
Layer；The insulating medium layer includes silica, the one or two of silicon nitride.
Alternatively, in step 5), the metal figure layer is formed using stripping technology (lift-of) or electroplating technology；It is described
One or more of the material of metal figure layer in titanium, tungsten, gold.
Alternatively, the p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks are connected into 1 thermocouple by step 5)
Or the thermopile structure that multiple thermocouples are connected into.
Alternatively, in step 6), the heat-insulated cavity is formed using sense coupling (ICP), is exposed
The composite dielectric film；The heat-insulated cavity has rectangular section.
As described above, high-temperature heat flux sensor based on SiC thermoelectric materials of the present invention and preparation method thereof, has following
Beneficial effect：
1. the present invention using MEMS technology manufacture hot-fluid device, have it is small, fast response time etc. is advantageous excellent
Gesture, while simple thermoelectric pile sensitive structure is used, preparation process is simple, and controllability is strong, with existing ripe semiconductor technology
With good compatibility；
2. the present invention is peeled off by ion beam and the preparation process temperature of material reduced with transfer techniques, conveniently realize SiC
The preparation of monocrystal thin films, at the same time, this method also have following 2 advantages：1) film that ion implanting peels off transfer has
The monocrystalline quality of SiC body materials；2) SiC bodies monocrystalline can reduce material cost with recirculation gas stripper film；
3. the present invention, as thermoelectric material, manufactures P-SiC/N-SiC thermoelectricity using the monocrystal SiC with excellent high temperature performance
Heap, under conditions of high-temperature stability is met, establishes low stress support film using semiconductor technology, reduces the thermal capacitance of device,
Reduce the response time of device, while increase the temperature difference of thermoelectric pile hot junction and cold end, so as to be beneficial to realize the big hot-fluid environment of high temperature
Quick, the accurate measurement of lower heat flow density.
Brief description of the drawings
Fig. 1 is shown as a kind of section of high-temperature heat flux sensor based on SiC thermoelectric materials provided in an embodiment of the present invention
Structure diagram.
Fig. 2 a-2b are shown as a kind of high-temperature heat flux sensor based on SiC thermoelectric materials provided in an embodiment of the present invention
Dimensional structure diagram, wherein, Fig. 2 b are the layering schematic diagram of Fig. 2 a.
Fig. 3 a-3b are shown as another high-temperature heat flux sensor based on SiC thermoelectric materials provided in an embodiment of the present invention
Dimensional structure diagram, wherein, Fig. 3 b be Fig. 3 a layering schematic diagram.
Fig. 4 is shown as a kind of preparation of high-temperature heat flux sensor based on SiC thermoelectric materials provided in an embodiment of the present invention
Method flow diagram.
Fig. 5 a-5f are shown as a kind of high-temperature heat flux sensor based on SiC thermoelectric materials provided in an embodiment of the present invention
Preparation process schematic diagram.
Component label instructions
10 SiC substrates
101 grooves
102 land regions
103 heat-insulated cavitys
20 composite dielectric films
30 SiC thin-film electro stop blocks
301 p-type SiC thin-film electro stop blocks
302 N-type SiC thin-film electro stop blocks
40 insulating medium layers
401 fairleads
50 metal figure layers
Each steps of S1~S6
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.It should be noted that in the case where there is no conflict, following embodiments and implementation
Feature in example can be mutually combined.
It should be noted that the diagram provided in following embodiments only illustrates the basic structure of the present invention in a schematic way
Think, then only the display component related with the present invention rather than component count, shape and size during according to actual implementation in schema
Draw, kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its assembly layout kenel
It is likely more complexity.
Referring to Fig. 1, the present embodiment provides a kind of high-temperature heat flux sensor based on SiC thermoelectric materials, including：SiC is served as a contrast
Bottom 10, composite dielectric film 20, heat-insulated cavity 103, SiC thin-film electros stop block 30, insulating medium layer 40, metal figure layer 50.
The SiC substrate 10 has first surface and second surface, on the first surface equipped with groove 101 and by
The groove 101 is around the land regions 102 formed；The composite dielectric film 20 is located at the first surface of the SiC substrate 10,
Cover 102 surface of 101 surface of groove and the land regions；The heat-insulated cavity 103 is arranged in the SiC substrate 10,
Inwardly concaved by the second surface of the SiC substrate 10, positioned at the part of the land regions 102 composite dielectric film 20
Lower section；The SiC thin-film electros stop block 30 includes p-type SiC thin-film electros stop block 301 and N-type SiC thin-film electros stop block 302, as thermoelectricity
Heap galvanic couple material；The SiC thin-film electros stop block 30 is located on the composite dielectric film 20 of 102 position of land regions, and
It is partially located at the top of the heat-insulated cavity 103；The insulating medium layer 40 covers the SiC thin-film electros stop block 30 and described
The surface of composite dielectric film 20；The metal figure layer 50 is formed on the insulating medium layer 40, including electrode and lead, will
The p-type SiC thin-film electros stop block 301 and the connection of N-type SiC thin-film electros stop block 302 form thermoelectric pile.
Specifically, the material of the SiC substrate 10 includes but not limited to one kind in 4H-SiC, 6H-SiC, 3C-SiC,
In the present embodiment, the material of the SiC substrate 10 is 4H-SiC.
Specifically, the depth of the groove 101 can be 1-50 μm, and in the present embodiment, the depth of the groove 101 is 10
μm。
Specifically, the composite dielectric film 20 can be combined by single or multiple lift low stress silica and silicon nitride,
Thickness can be 1-10 μm.In the present embodiment, the composite dielectric film 20 is by low stress silicon oxide/silicon nitride/silicon oxide/nitridation
Four tunic of silicon is combined, and thickness is 3.2 μm.
Specifically, the material of the SiC thin-film electros stop block 30 includes but not limited in 4H-SiC, 6H-SiC, 3C-SiC
One kind, thickness are less than 1 μm, and thickness deviation is no more than 3%.In the present embodiment, the SiC thin-film electros stop block 30 is using 0.8 μ of thickness
The 4H-SiC thin-film materials of m.
Specifically, the material of the insulating medium layer 40 includes silica, the one or two of silicon nitride.In the present embodiment
In, the insulating medium layer 40 uses thickness as 0.1 μm of silicon nitride.
Specifically, the material selection of the metal figure layer 50 is provided simultaneously with satisfactory electrical conductivity and the metal of higher melt, bag
Include but be not limited to titanium, the one or more in tungsten, platinum.In the present embodiment, the metal figure layer 50 is adopted as titanium tungsten.
As a preferred solution of the present embodiment, the heat-insulated cavity 103 can run through the SiC substrate 10, expose
The part composite dielectric film 20, to form hanging film sensitive structure.Specifically, the heat-insulated cavity 103 can have rectangle
Section.In the present embodiment, the heat-insulated cavity 103 is a cylinder.
It should be noted that the p-type SiC thin-film electros stop block 301 and N-type SiC thin-film electros stop block 302 pass through metal lead wire
P-SiC/N-SiC thermocouples are connected into, multiple P-SiC/N-SiC thermocouples connect to form P-SiC/N-SiC thermopile structures, institute
The number for stating P-SiC/N-SiC thermocouples is at least 1, and in the present embodiment, the number of the P-SiC/N-SiC thermocouples is 2
Or 5.
Fig. 2 a-2b and Fig. 3 a-3b respectively illustrate different two kinds of thermocouple quantity provided in this embodiment and are based on SiC
The high-temperature heat flux sensor stereochemical structure of thermoelectric material.
The high-temperature heat flux sensor based on SiC thermoelectric materials shown in Fig. 2 a-2b is including in SiC substrate 10, SiC substrate 10
Composite dielectric film 20, and two thermocouples being formed by connecting by 4 SiC thin-film electros stop blocks 30, and two thermocouples series connection
Form thermopile structure.Wherein, 4 SiC thin-film electros stop blocks 30 are arranged on the top of land regions 102 of SiC substrate 10, uniformly divide
Cloth, is connected by lead 501, and electrode 502 is arranged in groove 101 (in order to make it easy to understand, eliminating insulating medium layer in figure).Platform
The outer contour in region 102 uses rectangle.Heat-insulated cavity 103 uses cylinder, arranged on the center of land regions 102, makes SiC films
Resistance bolck 30 is partially located at the heat-insulated top of cavity 103.
The high-temperature heat flux sensor based on SiC thermoelectric materials shown in Fig. 3 a-3b is included by 10 SiC thin-film electros stop blocks 30
Five thermocouples that (i.e. 5 p-type SiC thin-film electros stop blocks 301 and 5 N-type SiC thin-film electros stop blocks 302) are formed by connecting, and five
Thermocouple connects to form thermopile structure.Wherein, 10 SiC thin-film electros stop blocks 30 are arranged in the land regions 102 of SiC substrate 10
Side, is uniformly distributed, is connected by lead 501, and electrode 502 is arranged in groove 101 (to be situated between in order to make it easy to understand, being not drawn into insulation in figure
Matter layer).The outer contour of land regions 102 is using circular.Heat-insulated cavity 103 uses cylinder, in land regions 102
Centre, make SiC thin-film electros stop block 30 is partially located at the heat-insulated top of cavity 103.
The operation principle of the above-mentioned high-temperature heat flux sensor based on SiC thermoelectric materials is：Composite dielectric film 20 it is hanging quick
Sense face absorbs heat, and heat flows rapidly along its radial direction, forms temperature gradient.By hanging sensitive area it is centrally disposed be thermoelectricity
Heap it is thermoae, SiC substrate 10 regards the cold pole of thermoelectric pile as, in this way, the power of incident hot-fluid can pass through thermoelectric pile output potential
Size directly measure.In order to improve the heat absorption rate of sensitive area, it is ensured that export the sensitivity of signal, can be applied on sensitive area surface
Black absorbing material is applied, may also reach up the effect for fully absorbing heat and improving intensity.
In addition, the present embodiment also provides a kind of preparation method of the high-temperature heat flux sensor based on SiC thermoelectric materials, such as scheme
Shown in 4, include the following steps：
S1, which provides one, has the SiC substrate of first surface and second surface, and etching groove on the first surface, shape
The land regions formed are surrounded into by the groove；
S2 forms composite dielectric film in the first surface, and the composite dielectric film covers flute surfaces and described flat
Taiwan area field surface；
S3 forms p-type SiC thin-film electros stop block and N-type SiC films in the complex media film surface of the land regions
Resistance bolck；
S4 forms insulating medium layer in the p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks surface, and described
Fairlead is formed on insulating medium layer, to expose the part p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks；
S5 forms the metal figure layer for including electrode and lead in the insulating medium layer and the lead hole surface, by institute
State p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks connect into thermoelectric pile；
S6 etches to form heat-insulated cavity in the second surface of the SiC substrate, and the heat-insulation chamber body is located at the platform area
Below the part composite dielectric film in domain, and make the local position of the p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks
In the top of the heat-insulated cavity.
Above-mentioned preparation method is further described with reference to Fig. 5 a-5f.
First, as shown in Figure 5 a, step S1 is performed, there is provided one has first surface and second surface (i.e. front and back)
SiC substrate 10, using photoetching process in the substrate 10 first surface (front) formed etching window, pass through the etching
Window performs etching the SiC substrate 10, forms the groove 101 of predetermined depth, and surround what is formed by the groove 101
Land regions 102.
Specifically, the material of the SiC substrate 10 includes but not limited to one kind in 4H-SiC, 6H-SiC, 3C-SiC,
In the present embodiment, the material of the SiC substrate 10 is 4H-SiC.
Specifically, the etching window includes but not limited to rectangle, circular one kind, and then the land regions 102 formed
Outer contour include but not limited to rectangle, circular one kind；In the present embodiment, the outer contour of gained land regions 102 is square
Shape (as illustrated in figures 2 a-2b) is circular (as shown in Figure 3 a-3b).
Specifically, sense coupling (ICP) can be used to form the groove 101, the depth of the groove 101
Spend for 1-50 μm, in the present embodiment, the depth of the groove 2 is 10 μm.
Then, as shown in Figure 5 b, step S2 is performed, it is compound in one layer of 10 surface of SiC substrate deposition for foring groove 101
Deielectric-coating 20, the composite dielectric film 20 cover 102 surface of 101 surface of groove and the land regions.Compound Jie
Plasma membrane 20 can be combined by single or multiple lift silica and silicon nitride, and thickness is 1-10 μm；In the present embodiment, it is described multiple
Close deielectric-coating 20 to be combined by low stress silicon oxide/silicon nitride/silicon oxide/four tunic of silicon nitride, thickness is 3.2 μm.Formed
The composite dielectric film 20 can use the methods of thermal oxide, low-pressure chemical vapor deposition (LPCVD).
Next, as shown in Figure 5 c, performing step S3, formed in 20 surface of composite dielectric film and be used as thermoelectric pile galvanic couple
The SiC thin-film electros stop block 30 of material, including p-type SiC thin-film electros stop block 301 and N-type SiC thin-film electros stop block 302.
As a kind of preferred solution of the present embodiment, the p-type SiC thin-film electros stop block 301 and N-type SiC thin-film electros are formed
Stop block 302 specifically may include steps of：
One layer of SiC film is shifted prior to 20 surface of composite dielectric film, by photoetching process in the SiC film surfaces
First, second window is successively formed, by the use of photoresist as mask layer, p-type, n-type doping, figure are carried out to the SiC films
Change the SiC films, anneal, form p-type SiC thin-film electros stop block 301 and N-type SiC thin-film electros stop block 302.
Wherein it is possible to the SiC films are doped using the method for ion implanting；Using inductively coupled plasma
Etching (ICP) is patterned the SiC films；Peeled off using ion beam and the method for substrate transfer shifts SiC films.Institute
The material for stating SiC films includes but not limited to one kind of 4H-SiC, 6H-SiC, 3C-SiC, and thickness is less than 1 μm, and thickness deviation is not
More than 3%；In the present embodiment, the SiC films are using 4H-SiC 0.8 μm thick.
It should be noted that the ion beam is peeled off and the physical essence of substrate transfer is noted by the light element such as H ion
Enter, bubble and hole rich in injection ion are formed at the certain depth of SiC single crystal, and form stripping defect layer.Heating
During, injecting the expansion of gas makes top layer SiC films be separated from single crystalline substrate, and by wafer bonding by stripping
SiC films are transferred in SiC substrate.
It should be noted that ion beam is peeled off and substrate transfer technology can reduce the preparation process temperature of material, it is convenient
Realize the preparation of SiC films, at the same time, the film formed by this method has the monocrystalline quality of SiC body materials, and SiC
Body monocrystalline can reduce material cost with recirculation gas stripper film.
Next, as fig 5d, performing step S4, insulating medium layer is formed in 30 surface of SiC thin-film electros stop block
40, photoetching simultaneously etches the insulating medium layer 40, exposes the part SiC thin-film electros stop block 30, forms fairlead 401.Tool
Body, can using plasma enhancing chemical vapor deposition (PECVD) form the insulating medium layer 40, the insulating medium layer
40 include silica, the one or two of silicon nitride；In the present embodiment, the insulating medium layer 40 uses thickness as 0.1 μm
Silicon nitride.
Then, as depicted in fig. 5e, step S5 is performed, is deposited in the insulating medium layer 40 and 401 surface of the fairlead
And graphical one layer of metal, as the lead 501 and electrode 502 between the SiC thin-film electros stop block 30, i.e. metal figure layer 50.
The p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks are connected into the occasionally multiple thermocouples of 1 thermoelectricity by lead 501；Institute
State multiple thermocouples and be connected into thermopile structure, in the present embodiment, the number of P-SiC/N-SiC thermocouples is 2 or 5.
Specifically, stripping technology can be used or electroplating technology is formed and the graphical metal, the metal needs are at the same time
Possess good electric conductivity and higher fusing point, include but not limited to the one or more in titanium, tungsten, platinum；In the present embodiment,
The simultaneously graphical metal is formed using stripping technology, the metal is titanium tungsten.
Specifically, the step of stripping technology is：Glue spraying, lithographic definition go out the figure of metal lead wire 501 and electrode 502
Shape, photoresist thickness are 1~10 μm；Titanium tungsten is sputtered, thickness is 0.2~2 μm；Acetone ultrasonic depolymerization.
Finally, as shown in figure 5f, step S6 is performed, release window is formed in 10 back side of SiC substrate, is released by described
Put window to perform etching the SiC substrate 103 from the back side, release obtains heat-insulated cavity 103, completes SiC high-temperature heat fluxes sensing
The preparation of device.
Specifically, the heat-insulated cavity 103, the heat-insulated cavity are discharged using sense coupling (ICP)
103 run through the SiC substrate 10, and the exposure composite dielectric film 20, forms hanging film sensitive structure, and have rectangular section；
In the present embodiment, the heat-insulated cavity 103 is a cylinder.
In conclusion high-temperature heat flux sensor based on SiC thermoelectric materials of the present invention and preparation method thereof uses MEMS
Technology manufactures hot-fluid device, has small, the advantageous advantage such as fast response time, while quick using simple thermoelectric pile
Feel structure, preparation process is simple, and controllability is strong, has good compatibility with existing ripe semiconductor technology；Pass through ion
Beam, which is peeled off, reduces the preparation process temperature of material with transfer techniques, conveniently realizes the preparation of SiC single crystal film, at the same time,
This method also has following 2 advantages：1) ion implanting peels off monocrystalline quality of the film with SiC body materials of transfer；2)
SiC bodies monocrystalline can reduce material cost with recirculation gas stripper film；The present invention is made using the monocrystal SiC with excellent high temperature performance
For thermoelectric material, P-SiC/N-SiC thermoelectric piles are manufactured, under conditions of high-temperature stability is met, are established using semiconductor technology
Low stress support film, reduces the thermal capacitance of device, reduces the response time of device, while increases the temperature of thermoelectric pile hot junction and cold end
Difference, so that beneficial to quick, the accurate measurement for realizing heat flow density under the big hot-fluid environment of high temperature.
So the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (19)
- A kind of 1. high-temperature heat flux sensor based on SiC thermoelectric materials, it is characterised in that including：SiC substrate, the SiC substrate have first surface and second surface, on the first surface equipped with groove and by The groove surrounds the land regions formed；Composite dielectric film, positioned at the first surface of the SiC substrate, covers the flute surfaces and the land regions surface；Heat-insulated cavity, in the SiC substrate, is inwardly concaved by the second surface of the SiC substrate, positioned at the platform area The lower section of the part composite dielectric film in domain；P-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks, the composite dielectric film positioned at the land regions position On, and it is partially located at the top of the heat-insulated cavity；Insulating medium layer, covers the p-type SiC thin-film electros stop block and N-type SiC thin-film electros stop block and the composite dielectric film；Metal figure layer, is formed on the insulating medium layer, including electrode and lead, by the p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks connect to form thermoelectric pile.
- 2. the high-temperature heat flux sensor according to claim 1 based on SiC thermoelectric materials, it is characterised in that：The SiC linings The one kind of the material at bottom in 4H-SiC, 6H-SiC, 3C-SiC.
- 3. the high-temperature heat flux sensor according to claim 1 based on SiC thermoelectric materials, it is characterised in that：The groove Depth be 1-50 μm.
- 4. the high-temperature heat flux sensor according to claim 1 based on SiC thermoelectric materials, it is characterised in that：It is described compound Deielectric-coating is combined by the silica and silicon nitride of single or multiple lift, and thickness is 1-10 μm.
- 5. the high-temperature heat flux sensor according to claim 1 based on SiC thermoelectric materials, it is characterised in that：It is described heat-insulated Cavity runs through the SiC substrate, exposes the part composite dielectric film；The heat-insulated cavity has rectangular section.
- 6. the high-temperature heat flux sensor according to claim 1 based on SiC thermoelectric materials, it is characterised in that：The p-type The one kind of the material of SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks in 4H-SiC, 6H-SiC, 3C-SiC；The P The thickness of type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks is less than 1 μm, and thickness deviation is no more than 3%.
- 7. the high-temperature heat flux sensor according to claim 1 based on SiC thermoelectric materials, it is characterised in that：The insulation The material of dielectric layer includes silica, the one or two of silicon nitride.
- 8. the high-temperature heat flux sensor according to claim 1 based on SiC thermoelectric materials, it is characterised in that：The metal One or more of the material of figure layer in titanium, tungsten, platinum.
- A kind of 9. preparation method of the high-temperature heat flux sensor based on SiC thermoelectric materials, it is characterised in that the described method includes with Lower step：1) providing one has the SiC substrate of first surface and second surface, and etching groove on the first surface, formed by The groove surrounds the land regions formed；2) composite dielectric film is formed in the first surface, the composite dielectric film covers the flute surfaces and the platform area Field surface；3) p-type SiC thin-film electros stop block and N-type SiC film resistors are formed in the complex media film surface of the land regions Block；4) insulating medium layer is formed in the p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks surface, and in the insulation Fairlead is formed on dielectric layer, to expose the part p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks；5) the metal figure layer of electrode and lead is included in the insulating medium layer and lead hole surface formation, by the P Type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks connect into thermoelectric pile；6) etch to form heat-insulated cavity in the second surface of the SiC substrate, the heat-insulation chamber body is located at the land regions Below the composite dielectric film of part, and make the p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks is partially located at institute State the top of heat-insulated cavity.
- 10. the preparation method of the high-temperature heat flux sensor according to claim 9 based on SiC thermoelectric materials, its feature exist In：In step 1), the one kind of the material of the SiC substrate in 4H-SiC, 6H-SiC, 3C-SiC.
- 11. the preparation method of the high-temperature heat flux sensor according to claim 9 based on SiC thermoelectric materials, its feature exist In：In step 1), the groove is formed by chemical wet etching window using sense coupling；The groove Depth is 1-50 μm.
- 12. the preparation method of the high-temperature heat flux sensor according to claim 9 based on SiC thermoelectric materials, its feature exist In：In step 2), the complex media is formed using one or both of thermal oxide, low-pressure chemical vapor deposition method Film；The composite dielectric film is combined by the silica and silicon nitride of single or multiple lift, and thickness is 1-10 μm.
- 13. the preparation method of the high-temperature heat flux sensor according to claim 9 based on SiC thermoelectric materials, its feature exist In：In step 3), the method for forming the p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks comprises the following steps：One layer of SiC film is shifted in the complex media film surface；P-type doping and n-type doping are carried out to the SiC films as mask layer using photoresist；The graphical SiC films；Annealing is carried out to the patterned SiC films and forms p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks.
- 14. the preparation method of the high-temperature heat flux sensor according to claim 13 based on SiC thermoelectric materials, its feature exist In：Peeled off using ion beam and the method for substrate transfer shifts the SiC films；The material of the SiC films is selected from 4H- One kind in SiC, 6H-SiC, 3C-SiC；The thickness of the SiC films is less than 1 μm, and thickness deviation is no more than 3%.
- 15. the preparation method of the high-temperature heat flux sensor according to claim 13 based on SiC thermoelectric materials, its feature exist In：P-type doping and n-type doping are carried out to the SiC films using the method for ion implanting；Carved using inductively coupled plasma Erosion is patterned the SiC films.
- 16. the preparation method of the high-temperature heat flux sensor according to claim 9 based on SiC thermoelectric materials, its feature exist In：In step 4), using plasma enhancing chemical vapor deposition forms the insulating medium layer；The insulating medium layer bag Include the one or two of silica, silicon nitride.
- 17. the preparation method of the high-temperature heat flux sensor according to claim 9 based on SiC thermoelectric materials, its feature exist In：In step 5), the metal figure layer is formed using stripping technology or electroplating technology；The material of the metal figure layer is selected from One or more in titanium, tungsten, platinum.
- 18. the preparation method of the high-temperature heat flux sensor according to claim 9 based on SiC thermoelectric materials, its feature exist In：The p-type SiC thin-film electros stop block and N-type SiC thin-film electro stop blocks are connected into the occasionally multiple thermocouples of 1 thermoelectricity by step 5) The thermopile structure being connected into.
- 19. the preparation method of the high-temperature heat flux sensor according to claim 9 based on SiC thermoelectric materials, its feature exist In：In step 6), the heat-insulated cavity is formed using sense coupling, exposes the composite dielectric film；Institute Stating heat-insulated cavity has rectangular section.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109141686A (en) * | 2018-09-27 | 2019-01-04 | 北京遥测技术研究所 | A kind of heat flow transducer based on thermoelectric pile principle |
| CN111982323A (en) * | 2019-05-24 | 2020-11-24 | 中国科学院上海微系统与信息技术研究所 | Thermopile type high-temperature heat flow sensor and preparation method thereof |
| WO2021170112A1 (en) * | 2020-02-28 | 2021-09-02 | 山东芯源光电科技有限公司 | Black silicon carbide ceramic based thermoelectric photodetector, optical power meter and optical energy meter |
| CN116046089A (en) * | 2023-03-23 | 2023-05-02 | 东南大学 | High-temperature MEMS thermal flow sensor based on silicon carbide pn junction temperature measurement and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6914343B2 (en) * | 2001-12-12 | 2005-07-05 | Hi-Z Technology, Inc. | Thermoelectric power from environmental temperature cycles |
| WO2010151010A2 (en) * | 2009-06-24 | 2010-12-29 | (주)아이뷰테크 | Thermoelectric conversion device and method for manufacturing same |
| CN203643055U (en) * | 2013-11-25 | 2014-06-11 | 中国电子科技集团公司第四十八研究所 | Thin-film heat flow sensor for high-temperature large-heat-flow measurement |
| KR20140090909A (en) * | 2013-01-10 | 2014-07-18 | 삼성전자주식회사 | Infrared detector and infrared image sensor |
| WO2015006580A1 (en) * | 2013-07-11 | 2015-01-15 | North Carolina State University | Microfluidic systems and methods for thermal flow cytometry |
| CN104501970A (en) * | 2014-12-18 | 2015-04-08 | 上海新微技术研发中心有限公司 | Three-dimensional temperature detector and manufacturing method thereof |
| CN107123729A (en) * | 2016-02-25 | 2017-09-01 | 中国科学院上海硅酸盐研究所 | A kind of nanometer silicon carbide/P-type silicon germanium alloy base thermoelectrical composite material and preparation method thereof |
| CN208270086U (en) * | 2017-12-27 | 2018-12-21 | 中国科学院上海微系统与信息技术研究所 | High-temperature heat flux sensor based on SiC thermoelectric material |
-
2017
- 2017-12-27 CN CN201711447533.4A patent/CN108007580B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6914343B2 (en) * | 2001-12-12 | 2005-07-05 | Hi-Z Technology, Inc. | Thermoelectric power from environmental temperature cycles |
| WO2010151010A2 (en) * | 2009-06-24 | 2010-12-29 | (주)아이뷰테크 | Thermoelectric conversion device and method for manufacturing same |
| KR20140090909A (en) * | 2013-01-10 | 2014-07-18 | 삼성전자주식회사 | Infrared detector and infrared image sensor |
| WO2015006580A1 (en) * | 2013-07-11 | 2015-01-15 | North Carolina State University | Microfluidic systems and methods for thermal flow cytometry |
| CN203643055U (en) * | 2013-11-25 | 2014-06-11 | 中国电子科技集团公司第四十八研究所 | Thin-film heat flow sensor for high-temperature large-heat-flow measurement |
| CN104501970A (en) * | 2014-12-18 | 2015-04-08 | 上海新微技术研发中心有限公司 | Three-dimensional temperature detector and manufacturing method thereof |
| CN107123729A (en) * | 2016-02-25 | 2017-09-01 | 中国科学院上海硅酸盐研究所 | A kind of nanometer silicon carbide/P-type silicon germanium alloy base thermoelectrical composite material and preparation method thereof |
| CN208270086U (en) * | 2017-12-27 | 2018-12-21 | 中国科学院上海微系统与信息技术研究所 | High-temperature heat flux sensor based on SiC thermoelectric material |
Non-Patent Citations (1)
| Title |
|---|
| MAN I LEI: "SILICON CARBIDE HIGH TEMPERATURE", 《OHIOLINK》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109141686A (en) * | 2018-09-27 | 2019-01-04 | 北京遥测技术研究所 | A kind of heat flow transducer based on thermoelectric pile principle |
| CN109141686B (en) * | 2018-09-27 | 2021-04-13 | 北京遥测技术研究所 | Thermal current sensor based on thermopile principle |
| CN111982323A (en) * | 2019-05-24 | 2020-11-24 | 中国科学院上海微系统与信息技术研究所 | Thermopile type high-temperature heat flow sensor and preparation method thereof |
| WO2021170112A1 (en) * | 2020-02-28 | 2021-09-02 | 山东芯源光电科技有限公司 | Black silicon carbide ceramic based thermoelectric photodetector, optical power meter and optical energy meter |
| CN116046089A (en) * | 2023-03-23 | 2023-05-02 | 东南大学 | High-temperature MEMS thermal flow sensor based on silicon carbide pn junction temperature measurement and preparation method thereof |
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