CN208270086U - High-temperature heat flux sensor based on SiC thermoelectric material - Google Patents
High-temperature heat flux sensor based on SiC thermoelectric material Download PDFInfo
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Abstract
The utility model provides a kind of high-temperature heat flux sensor based on SiC thermoelectric material, comprising: SiC substrate has first surface and second surface, and first surface is equipped with groove and surrounds the land regions formed by groove；Composite dielectric film, covering groove and land regions；Heat-insulated cavity is set in SiC substrate, is inwardly concaved by second surface, below the part composite dielectric film of land regions；P-type SiC thin-film electro stop block and N-type SiC thin-film electro stop block on the composite dielectric film of land regions, and are partially located above heat-insulated cavity；Insulating medium layer covers p-type SiC thin-film electro stop block and N-type SiC thin-film electro stop block and composite dielectric film；Metal figure layer, is formed on insulating medium layer, including electrode and lead, connects p-type SiC thin-film electro stop block and N-type SiC thin-film electro stop block to form thermoelectric pile.The utility model use with excellent high temperature performance monocrystal SiC as thermoelectric material, it can be achieved that in high-temperature severe environment heat flow density quick, accurate measurement.
Description
Technical field
The utility model belongs to hot-fluid detection technique field, more particularly to a kind of high warm based on SiC thermoelectric material
Flow sensor.
Background technique
In nature and production process, it there is a large amount of heat transfer.With the development of modern science and technology, only
Temperature is far from enough as the unique information of heat transfer.Therefore, hot-fluid etection theory and technology are more taken seriously, phase
The heat flow transducer answered also has obtained biggish development and has been widely applied.
Though existing heat flow transducer can satisfy the general measure demand of heat flow density in workers and peasants' production and daily life,
But its heat resisting temperature and measuring range are generally lower, usually in 1000 DEG C and 1MW/m2Hereinafter, and its size it is larger, when response
Between longer, only ms magnitude at the soonest.Therefore, in the superhigh temperature such as Aeronautics and Astronautics engine, the adverse circumstances of big hot-fluid
In, existing heat flow transducer is difficult to realize fast and accurately measure.
Using the thermocouple type hot-fluid device of MEMS technology manufacture there is small in size, simple, fast response time of structure etc. to obtain
Its only thick advantage, but the problem of superelevation operating temperature, big hot-fluid is faced, the selection of material is particularly important.SiC is as a kind of width
Gap semiconductor has high-melting-point, high heat conductance, high carrier mobility and high-breakdown-voltage, is the reason of high temp sensitive device
Think material.It is developed based on the high temperature micro-heater and flow sensor of SiC at present, but the high-temperature heat flux based on SiC passes
Sensor not yet has been reported that.
4H-SiC monocrystal thin films material is that fusing point is higher in SiC, the higher material of thermal conductivity, using 4H-SiC thermoelectric material
The feature that its high-temperature stability is good, thermal conductivity is big can be made full use of by manufacturing big hot-fluid device, real while improving thermal stability
Now quickly heating and cooling, to make it possible its application in hyperthermal environments.
Therefore, no matter from industrial production demand or technology trends, the stable base of a kind of quick response, performance is developed
Have great importance in the high-temperature heat flux sensor of SiC thermoelectric material.
Utility model content
In view of prior art described above, the purpose of this utility model is to provide a kind of height based on SiC thermoelectric material
Flow sensor is warmed, for realizing quick, the accurate measurement of heat flow density in the high-temperature severe environments such as aerospace, metallurgy.
In order to achieve the above objects and other related objects, the utility model provides a kind of high temperature based on SiC thermoelectric material
Heat flow transducer, comprising:
SiC substrate, the SiC substrate have first surface and second surface, on the first surface be equipped with groove with
And the land regions formed are surrounded by the groove；
Composite dielectric film covers the flute surfaces and the land regions table positioned at the first surface of the SiC substrate
Face；
Heat-insulated cavity is set in the SiC substrate, is inwardly concaved by the second surface of the SiC substrate, is located at described flat
The lower section of the part in the platform region composite dielectric film；
P-type SiC thin-film electro stop block and N-type SiC thin-film electro stop block, the complex media positioned at the land regions position
On film, and it is partially located at the top of the heat-insulated cavity；
Insulating medium layer covers the p-type SiC thin-film electro stop block and N-type SiC thin-film electro stop block and the complex media
Film；
Metal figure layer is formed on the insulating medium layer, including electrode and lead, by the p-type SiC film resistor
Block and N-type SiC thin-film electro stop block connect to form thermoelectric pile.
Optionally, the material of the SiC substrate is selected from one of 4H-SiC, 6H-SiC, 3C-SiC.
Optionally, the depth of the groove is 1-50 μm.
Optionally, the composite dielectric film is combined by the silica and silicon nitride of single-layer or multi-layer, with a thickness of 1-10 μ
m。
Optionally, the heat-insulated cavity runs through the SiC substrate, exposes the part composite dielectric film；It is described heat-insulated
Cavity has rectangular section.
Optionally, the material of the p-type SiC thin-film electro stop block and N-type SiC thin-film electro stop block is selected from 4H-SiC, 6H-
One of SiC, 3C-SiC；For the thickness of the p-type SiC thin-film electro stop block and N-type SiC thin-film electro stop block less than 1 μm, thickness is inclined
Difference is no more than 3%.
Optionally, the material of the insulating medium layer includes the one or two of silica, silicon nitride.
Optionally, the material of the metal figure layer is selected from one of titanium, tungsten, platinum or a variety of.
As described above, the high-temperature heat flux sensor based on SiC thermoelectric material of the utility model, has below beneficial to effect
Fruit:
1. the utility model can be used MEMS technology manufacture hot-fluid device, have it is small in size, fast response time etc. day it is only
Thick advantage, while simple thermoelectric pile sensitive structure is used, preparation process is simple, and controllability is strong, partly leads with existing mature
Body technology has good compatibility；
2. the utility model uses the monocrystal SiC with excellent high temperature performance as thermoelectric material, P-SiC/N-SiC is manufactured
Thermoelectric pile establishes low stress support film using semiconductor technology, reduces the heat of device under conditions of meeting high-temperature stability
Hold, reduce the response time of device, while increasing the temperature difference of thermoelectric pile hot end and cold end, to be conducive to realize the big hot-fluid ring of high temperature
Quick, the precise measurement of heat flow density under border.
Detailed description of the invention
Fig. 1 is shown as a kind of high-temperature heat flux sensor based on SiC thermoelectric material provided by the embodiment of the utility model
The schematic diagram of the section structure.
Fig. 2 a-2b is shown as a kind of high-temperature heat flux sensing based on SiC thermoelectric material provided by the embodiment of the utility model
The schematic perspective view of device, wherein Fig. 2 b is the hierarchical diagram of Fig. 2 a.
Fig. 3 a-3b is shown as another high-temperature heat flux based on SiC thermoelectric material provided by the embodiment of the utility model and passes
The schematic perspective view of sensor, wherein Fig. 3 b is the hierarchical diagram of Fig. 3 a.
Fig. 4 is shown as a kind of high-temperature heat flux sensor based on SiC thermoelectric material provided by the embodiment of the utility model
Preparation method flow chart.
Fig. 5 a-5f is shown as a kind of high-temperature heat flux sensing based on SiC thermoelectric material provided by the embodiment of the utility model
The preparation process schematic diagram of device.
Component label instructions
10 SiC substrates
101 grooves
102 land regions
103 heat-insulated cavitys
20 composite dielectric films
30 SiC thin-film electro stop blocks
301 p-type SiC thin-film electro stop blocks
302 N-type SiC thin-film electro stop blocks
40 insulating medium layers
401 fairleads
50 metal figure layers
Each step of S1~S6
Specific embodiment
Illustrate the embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this theory
Content disclosed by bright book understands other advantages and effect of the utility model easily.The utility model can also be by addition
Different specific embodiments are embodied or practiced, and the various details in this specification can also be based on different viewpoints and answer
With carrying out various modifications or alterations under the spirit without departing from the utility model.It should be noted that the case where not conflicting
Under, the feature in following embodiment and embodiment can be combined with each other.
It should be noted that diagram provided in following embodiment only illustrates the basic of the utility model in a schematic way
Conception, only shown in schema then with related component in the utility model rather than component count when according to actual implementation, shape
And size is drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its assembly layout
Kenel may also be increasingly complex.
Referring to Fig. 1, the present embodiment provides a kind of high-temperature heat flux sensors based on SiC thermoelectric material, comprising: SiC lining
Bottom 10, composite dielectric film 20, heat-insulated cavity 103, SiC thin-film electro stop block 30, insulating medium layer 40, metal figure layer 50.
The SiC substrate 10 have first surface and second surface, on the first surface be equipped with groove 101 and by
The groove 101 is around the land regions 102 formed；The composite dielectric film 20 is located at the first surface of the SiC substrate 10,
Cover 102 surface of 101 surface of groove and the land regions；The heat-insulated cavity 103 is set in the SiC substrate 10,
It is inwardly concaved by the second surface of the SiC substrate 10, positioned at the part of the land regions 102 composite dielectric film 20
Lower section；The SiC thin-film electro stop block 30 includes p-type SiC thin-film electro stop block 301 and N-type SiC thin-film electro stop block 302, as thermoelectricity
Heap galvanic couple material；The SiC thin-film electro stop block 30 is located on the composite dielectric film 20 of 102 position of land regions, and
It is partially located at the top of the heat-insulated cavity 103；The insulating medium layer 40 covers the SiC thin-film electro stop block 30 and described
The surface of composite dielectric film 20；The metal figure layer 50 is formed on the insulating medium layer 40, including electrode and lead, will
The p-type SiC thin-film electro stop block 301 and the connection of N-type SiC thin-film electro stop block 302 form thermoelectric pile.
Specifically, the material of the SiC substrate 10 includes but is not limited to one of 4H-SiC, 6H-SiC, 3C-SiC,
In the present embodiment, the material of the SiC substrate 10 is 4H-SiC.
Specifically, the depth of the groove 101 can be 1-50 μm, and in the present embodiment, the depth of the groove 101 is 10
μm。
Specifically, the composite dielectric film 20 can be combined by single-layer or multi-layer low stress silica and silicon nitride,
Thickness can be 1-10 μm.In the present embodiment, the composite dielectric film 20 is by low stress silicon oxide/silicon nitride/silicon oxide/nitridation
Four tunic of silicon is combined, with a thickness of 3.2 μm.
Specifically, the material of the SiC thin-film electro stop block 30 includes but is not limited in 4H-SiC, 6H-SiC, 3C-SiC
One kind, for thickness less than 1 μm, thickness deviation is no more than 3%.In the present embodiment, the SiC thin-film electro stop block 30 uses 0.8 μ of thickness
The 4H-SiC thin-film material of m.
Specifically, the material of the insulating medium layer 40 includes the one or two of silica, silicon nitride.In the present embodiment
In, the insulating medium layer 40 is using the silicon nitride with a thickness of 0.1 μm.
Specifically, the material selection of the metal figure layer 50 is provided simultaneously with the metal of satisfactory electrical conductivity and higher melt, packet
Include but be not limited to one of titanium, tungsten, platinum or a variety of.In the present embodiment, the metal figure layer 50 is adopted as titanium tungsten.
As a preferred embodiment of the present embodiment, the heat-insulated cavity 103 can run through the SiC substrate 10, expose
The part composite dielectric film 20, to form hanging film sensitive structure.Specifically, the heat-insulated cavity 103 can have rectangle
Section.In the present embodiment, the heat-insulated cavity 103 is a cylindrical body.
It should be noted that the p-type SiC thin-film electro stop block 301 and N-type SiC thin-film electro stop block 302 pass through metal lead wire
P-SiC/N-SiC thermocouple is connected into, multiple P-SiC/N-SiC thermocouples connect to form P-SiC/N-SiC thermopile structure, institute
The number for stating P-SiC/N-SiC thermocouple is at least 1, and in the present embodiment, the number of the P-SiC/N-SiC thermocouple is 2
Or 5.
Fig. 2 a-2b and Fig. 3 a-3b respectively illustrate thermocouple quantity provided in this embodiment different two kinds based on SiC
The high-temperature heat flux sensor stereochemical structure of thermoelectric material.
High-temperature heat flux sensor based on SiC thermoelectric material shown in Fig. 2 a-2b includes SiC substrate 10, in SiC substrate 10
Composite dielectric film 20, and two thermocouples being formed by connecting by 4 SiC thin-film electro stop blocks 30, and two thermocouples series connection
Form thermopile structure.Wherein, 4 SiC thin-film electro stop blocks 30 are set to 102 top of land regions of SiC substrate 10, uniformly divide
Cloth is connected by lead 501, and electrode 502 is set in groove 101 (in order to make it easy to understand, insulating medium layer is omitted in figure).Platform
The outer profile in region 102 uses rectangle.Heat-insulated cavity 103 makes SiC film set on the center of land regions 102 using cylindrical body
Resistance bolck 30 is partially located at heat-insulated 103 top of cavity.
High-temperature heat flux sensor based on SiC thermoelectric material shown in Fig. 3 a-3b includes by 10 SiC thin-film electro stop blocks 30
Five thermocouples that (i.e. 5 p-type SiC thin-film electro stop blocks 301 and 5 N-type SiC thin-film electro stop blocks 302) are formed by connecting, and five
Thermocouple connects to form thermopile structure.Wherein, 10 SiC thin-film electro stop blocks 30 are set in the land regions 102 of SiC substrate 10
Side, is uniformly distributed, is connected by lead 501, and electrode 502 is set in groove 101 (to be situated between in order to make it easy to understand, being not drawn into insulation in figure
Matter layer).The outer profile of land regions 102 is using round.Heat-insulated cavity 103 uses cylindrical body, in land regions 102
Centre, make SiC thin-film electro stop block 30 is partially located at heat-insulated 103 top of cavity.
The working principle of the above-mentioned high-temperature heat flux sensor based on SiC thermoelectric material are as follows: composite dielectric film 20 it is hanging quick
Sense face absorbs heat, and heat is flowed along its radial direction rapidly, formation temperature gradient.Thermoelectricity is set by hanging sensitive area center
Heap it is thermoae, SiC substrate 10 regards the cold pole of thermoelectric pile as, in this way, the power of incident hot-fluid can pass through thermoelectric pile output potential
Size directly measure.In order to improve the heat absorption rate of sensitive area, it is ensured that the sensitivity of output signal can apply on sensitive area surface
Black absorbing material is applied, may also reach up the effect for fully absorbing heat and improving intensity.
In addition, the present embodiment also provides a kind of preparation method of high-temperature heat flux sensor based on SiC thermoelectric material, such as scheme
Shown in 4, include the following steps:
S1 provides a SiC substrate with first surface and second surface, and etching groove on the first surface, shape
At land regions made of being surrounded as the groove；
S2 forms composite dielectric film in the first surface, and the composite dielectric film covers flute surfaces and described flat
Platform region surface；
S3 forms p-type SiC thin-film electro stop block and N-type SiC film in the complex media film surface of the land regions
Resistance bolck；
S4 forms insulating medium layer in the p-type SiC thin-film electro stop block and the thin-film electro stop block surface N-type SiC, and described
Fairlead is formed on insulating medium layer, to expose the part p-type SiC thin-film electro stop block and N-type SiC thin-film electro stop block；
S5 forms the metal figure layer including electrode and lead in the insulating medium layer and the lead hole surface, by institute
It states p-type SiC thin-film electro stop block and N-type SiC thin-film electro stop block connects into thermoelectric pile；
S6 etches to form heat-insulated cavity in the second surface of the SiC substrate, and the heat-insulation chamber body is located at the platform area
Below the composite dielectric film of the part in domain, and make the local position of the p-type SiC thin-film electro stop block and N-type SiC thin-film electro stop block
In the top of the heat-insulated cavity.
Above-mentioned preparation method is further described below with reference to Fig. 5 a-5f.
Firstly, as shown in Figure 5 a, executing step S1, providing one has first surface and second surface (i.e. front and back)
SiC substrate 10, using photoetching process in the substrate 10 first surface (front) formed etching window, pass through the etching
Window performs etching the SiC substrate 10, forms the groove 101 of predetermined depth, and made of being surrounded as the groove 101
Land regions 102.
Specifically, the material of the SiC substrate 10 includes but is not limited to one of 4H-SiC, 6H-SiC, 3C-SiC,
In the present embodiment, the material of the SiC substrate 10 is 4H-SiC.
Specifically, the etching window includes but is not limited to rectangle, circular one kind, and then the land regions 102 formed
Outer profile include but is not limited to rectangle, circular one kind；In the present embodiment, the outer profile of gained land regions 102 is square
Shape (as illustrated in figures 2 a-2b) is round (as shown in Figure 3 a-3b).
Specifically, sense coupling (ICP) can be used and form the groove 101, the depth of the groove 101
Degree is 1-50 μm, and in the present embodiment, the depth of the groove 2 is 10 μm.
Then, as shown in Figure 5 b, step S2 is executed, it is compound in one layer of 10 surface of SiC substrate deposition for foring groove 101
Deielectric-coating 20, the composite dielectric film 20 cover 102 surface of 101 surface of groove and the land regions.Compound Jie
Plasma membrane 20 can be combined by single-layer or multi-layer silica and silicon nitride, with a thickness of 1-10 μm；In the present embodiment, described multiple
It closes deielectric-coating 20 to be combined by low stress silicon oxide/silicon nitride/silicon oxide/four tunic of silicon nitride, with a thickness of 3.2 μm.It is formed
The methods of thermal oxide, low-pressure chemical vapor deposition (LPCVD) can be used in the composite dielectric film 20.
Next, as shown in Figure 5 c, executing step S3, is formed in 20 surface of composite dielectric film and be used as thermoelectric pile galvanic couple
The SiC thin-film electro stop block 30 of material, including p-type SiC thin-film electro stop block 301 and N-type SiC thin-film electro stop block 302.
As a kind of preferred embodiment of the present embodiment, the p-type SiC thin-film electro stop block 301 and N-type SiC thin-film electro are formed
Stop block 302 can specifically include following steps:
One layer of SiC film is shifted prior to 20 surface of composite dielectric film, by photoetching process in the SiC film surface
The first, second window is successively formed, using photoresist as mask layer, p-type, n-type doping, figure are carried out to the SiC film
Change the SiC film, anneal, forms p-type SiC thin-film electro stop block 301 and N-type SiC thin-film electro stop block 302.
Wherein it is possible to which the method using ion implanting is doped the SiC film；Using inductively coupled plasma
Etching (ICP) is patterned the SiC film；SiC film is shifted using the method for ion beam removing and substrate transfer.Institute
The material for stating SiC film includes but is not limited to one kind of 4H-SiC, 6H-SiC, 3C-SiC, and thickness is less than 1 μm, and thickness deviation is not
More than 3%；In the present embodiment, the SiC film is using thick 0.8 μm of 4H-SiC.
It should be noted that the physical essence of the ion beam removing and substrate transfer is infused by the light elements ion such as H
Enter, forms bubble and hole rich in injection ion at the certain depth of SiC single crystal, and form removing defect layer.It is heating
In the process, the expansion for injecting gas separates surface layer SiC film from single crystalline substrate, and passes through wafer bonding for removing
SiC film is transferred in SiC substrate.
It should be noted that ion beam removing and substrate transfer technology can reduce the preparation process temperature of material, it is convenient
It realizes the preparation of SiC film, at the same time, there is the monocrystalline quality of SiC body material, and SiC by the film that this method is formed
Body monocrystalline can reduce material cost with recirculation gas stripper film.
Next, as fig 5d, executing step S4, insulating medium layer is formed in 30 surface of SiC thin-film electro stop block
40, photoetching simultaneously etches the insulating medium layer 40, exposes the part SiC thin-film electro stop block 30, forms fairlead 401.Tool
Body, plasma enhanced chemical vapor deposition (PECVD) can be used and form the insulating medium layer 40, the insulating medium layer
40 include the one or two of silica, silicon nitride；In the present embodiment, the insulating medium layer 40 is using with a thickness of 0.1 μm
Silicon nitride.
Then, as depicted in fig. 5e, step S5 is executed, is deposited in the insulating medium layer 40 and 401 surface of the fairlead
And graphical one layer of metal, as the lead 501 and electrode 502 between the SiC thin-film electro stop block 30, i.e. metal figure layer 50.
The p-type SiC thin-film electro stop block and N-type SiC thin-film electro stop block are connected into the occasionally multiple thermocouples of 1 thermoelectricity by lead 501；Institute
It states multiple thermocouples and is connected into thermopile structure, in the present embodiment, the number of P-SiC/N-SiC thermocouple is 2 or 5.
Specifically, the simultaneously graphical metal can be formed using stripping technology or electroplating technology, the metal needs are simultaneously
Has good electric conductivity and higher fusing point, including but not limited to one or more of titanium, tungsten, platinum；In the present embodiment,
It is formed using stripping technology and the graphical metal, the metal is titanium tungsten.
Specifically, the step of stripping technology are as follows: glue spraying, lithographic definition go out the figure of metal lead wire 501 and electrode 502
Shape, photoresist is with a thickness of 1~10 μm；Titanium tungsten is sputtered, with a thickness of 0.2~2 μm；Acetone ultrasonic depolymerization.
Finally, as shown in figure 5f, executing step S6, release window is formed in 10 back side of SiC substrate, is released by described
It puts window to perform etching the SiC substrate 103 from the back side, release obtains heat-insulated cavity 103, completes SiC high-temperature heat flux sensing
The preparation of device.
Specifically, the heat-insulated cavity 103, the heat-insulated cavity are discharged using sense coupling (ICP)
103 run through the SiC substrate 10, and the exposure composite dielectric film 20 forms hanging film sensitive structure, and has rectangular section；
In the present embodiment, the heat-insulated cavity 103 is a cylindrical body.
In conclusion high-temperature heat flux sensor based on SiC thermoelectric material of the utility model and preparation method thereof uses
MEMS technology manufactures hot-fluid device, has small in size, the advantageous advantage such as fast response time, while using simple thermoelectricity
Heap sensitive structure, preparation process is simple, and controllability is strong, has good compatibility with the semiconductor technology of existing maturation；Pass through
Ion beam removing and transfer techniques reduce the preparation process temperature of material, facilitate the preparation for realizing SiC single crystal film, same with this
When, this method also has following two points advantage: 1) film of ion implanting removing transfer has the monocrystalline quality of SiC body material；
2) SiC body monocrystalline can reduce material cost with recirculation gas stripper film；The utility model uses the monocrystalline with excellent high temperature performance
SiC manufactures P-SiC/N-SiC thermoelectric pile and utilizes semiconductor technology under conditions of meeting high-temperature stability as thermoelectric material
Low stress support film is established, the thermal capacitance of device is reduced, reduces the response time of device, while increasing thermoelectric pile hot end and cold end
The temperature difference, thus be conducive to realize the big hot-fluid environment of high temperature under heat flow density quick, precise measurement.
So the utility model effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above embodiments are only illustrative of the principle and efficacy of the utility model, and not for limitation, this is practical new
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
All equivalent modifications or change completed under mind and technical idea, should be covered by the claim of the utility model.
Claims (7)
1. a kind of high-temperature heat flux sensor based on SiC thermoelectric material characterized by comprising
SiC substrate, the SiC substrate have first surface and second surface, on the first surface be equipped with groove and by
The groove surrounds the land regions formed, wherein the depth of the groove is 1-50 μm；
Composite dielectric film covers the flute surfaces and the land regions surface positioned at the first surface of the SiC substrate；
Heat-insulated cavity is set in the SiC substrate, is inwardly concaved by the second surface of the SiC substrate, is located at the platform area
The lower section of the part in the domain composite dielectric film；
P-type SiC thin-film electro stop block and N-type SiC thin-film electro stop block, the composite dielectric film positioned at the land regions position
On, and it is partially located at the top of the heat-insulated cavity, wherein the p-type SiC thin-film electro stop block and N-type SiC thin-film electro stop block
For thickness less than 1 μm, thickness deviation is no more than 3%；
Insulating medium layer covers the p-type SiC thin-film electro stop block and N-type SiC thin-film electro stop block and the composite dielectric film；
Metal figure layer is formed on the insulating medium layer, including electrode and lead, by the p-type SiC thin-film electro stop block and
N-type SiC thin-film electro stop block connects to form thermoelectric pile.
2. the high-temperature heat flux sensor according to claim 1 based on SiC thermoelectric material, it is characterised in that: the SiC lining
The material at bottom is selected from one of 4H-SiC, 6H-SiC, 3C-SiC.
3. the high-temperature heat flux sensor according to claim 1 based on SiC thermoelectric material, it is characterised in that: described compound
Deielectric-coating is combined by the silica and silicon nitride of single-layer or multi-layer, with a thickness of 1-10 μm.
4. the high-temperature heat flux sensor according to claim 1 based on SiC thermoelectric material, it is characterised in that: described heat-insulated
Cavity runs through the SiC substrate, exposes the part composite dielectric film；The heat-insulated cavity has rectangular section.
5. the high-temperature heat flux sensor according to claim 1 based on SiC thermoelectric material, it is characterised in that: the p-type
The material of SiC thin-film electro stop block and N-type SiC thin-film electro stop block is selected from one of 4H-SiC, 6H-SiC, 3C-SiC.
6. the high-temperature heat flux sensor according to claim 1 based on SiC thermoelectric material, it is characterised in that: the insulation
The material of dielectric layer includes the one or two of silica, silicon nitride.
7. the high-temperature heat flux sensor according to claim 1 based on SiC thermoelectric material, it is characterised in that: the metal
The material of figure layer is selected from one of titanium, tungsten, platinum or a variety of.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108007580A (en) * | 2017-12-27 | 2018-05-08 | 中国科学院上海微系统与信息技术研究所 | High-temperature heat flux sensor based on SiC thermoelectric materials and preparation method thereof |
| CN117470413A (en) * | 2023-12-27 | 2024-01-30 | 山东大学 | Film type heat flow sensor and preparation method thereof |
-
2017
- 2017-12-27 CN CN201721869225.6U patent/CN208270086U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108007580A (en) * | 2017-12-27 | 2018-05-08 | 中国科学院上海微系统与信息技术研究所 | High-temperature heat flux sensor based on SiC thermoelectric materials and preparation method thereof |
| CN108007580B (en) * | 2017-12-27 | 2020-03-31 | 中国科学院上海微系统与信息技术研究所 | High-temperature heat flow sensor based on SiC thermoelectric material and preparation method thereof |
| CN117470413A (en) * | 2023-12-27 | 2024-01-30 | 山东大学 | Film type heat flow sensor and preparation method thereof |
| CN117470413B (en) * | 2023-12-27 | 2024-03-29 | 山东大学 | Film type heat flow sensor and preparation method thereof |
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