CN106017696B - Thermal resistance thin film thermoelectric heap-type transient heat flow meter and preparation method - Google Patents
Thermal resistance thin film thermoelectric heap-type transient heat flow meter and preparation method Download PDFInfo
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- CN106017696B CN106017696B CN201610549808.4A CN201610549808A CN106017696B CN 106017696 B CN106017696 B CN 106017696B CN 201610549808 A CN201610549808 A CN 201610549808A CN 106017696 B CN106017696 B CN 106017696B
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- 230000001052 transient effect Effects 0.000 title claims abstract description 31
- 239000010409 thin film Substances 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 238000005259 measurement Methods 0.000 claims abstract description 18
- 239000000919 ceramic Substances 0.000 claims abstract description 16
- 239000012530 fluid Substances 0.000 claims abstract description 15
- 230000005678 Seebeck effect Effects 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 57
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 238000004544 sputter deposition Methods 0.000 claims description 19
- 230000005619 thermoelectricity Effects 0.000 claims description 14
- 229910052697 platinum Inorganic materials 0.000 claims description 13
- 239000004642 Polyimide Substances 0.000 claims description 12
- 229920001721 polyimide Polymers 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 claims description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 claims description 3
- 230000004044 response Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 91
- 239000000758 substrate Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
- G01J2005/126—Thermoelectric black plate and thermocouple
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measuring Volume Flow (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
The present invention provides a kind of thermal resistance thin film thermoelectric heap-type transient heat flow meter and preparation method, the heat-flow meter includes ceramic bases and positive thermocouple, cathode thermocouple, thermocouple articulamentum, external thermal resistance layer and internal thermal resistance layer in ceramic bases, positive thermocouple and cathode thermocouple are docked by thermocouple articulamentum, and external thermal resistance layer, internal thermal resistance layer are covered on the top of positive thermocouple, cathode thermocouple；When external environment applies the hot-fluid with vertical direction on the heat-flow meter, external thermal resistance layer is different with the thickness of internal thermal resistance layer, positive thermocouple is connected with cathode thermocouple constitutes hot junction and cold junction point, there are temperature differences for two neighboring hot junction and cold junction point, according to Seebeck effect, just there is corresponding potential to export, output potential is related to heat flow density.The present invention can be realized the instantaneous measurement to heat flow density, have the characteristics that small simple, small in size, to tested field the influence of structure, fast response time, measurement temperature range is big, measurement accuracy is high.
Description
Technical field
The present invention relates to a kind of meter hot-fluid devices of field of micro electromechanical technology, specifically, being that be related to a kind of thermal resistance thin
Film thermocouple type thermal transient flowmeter and preparation method.
Background technique
Nowadays, in workers and peasants' production, scientific research, aerospace, power engineering and daily life, there is a large amount of
Heat transfer problem has to be solved.With the rapid development of modern science and technology, only using temperature as unique letter of heat transfer
It ceases far from enough.Therefore, the theory and technology of hot-fluid detection is increasingly taken seriously, and measures the sensor of hot-fluid --- heat
Flow the research of gauge head and heat-flow meter and using also more extensive.Heat resistance heat flow meter is suitable for the measurement of stable state hot-fluid, film
Heat-flow meter is measured suitable for transient heat flow, due to the development of aerospace cause and the actual needs of Thermal Power Engineering, in aerospace, space
In technology and some high-tech areas, a kind of thermal transient flowmeter that can reflect heat flow value rapidly of an urgent demand, so in order to grind
System is not only suitable for engineering reality, and is suitable for the heat-flow meter of aerospace field, thermal resistance thin film thermoelectric heap-type transient heat flow meter
It produces.This heat-flow meter utilizes the measuring principle of heat resistance heat flow meter, and combination film technology plates film difference on substrate
Thermoelectric pile obtains hot-fluid versus time curve according to thermoresistance layer temperature difference versus time curve, to obtain wink
State heat flow value.The measurement of transient heat flow is the difficult point of thermal testing, and is never solved the problems, such as very well.Study wink
China's energy-saving field and aerospace etc. are led in the measurement of transient heat flow in the measurement of state hot-fluid, especially short space
Domain suffers from positive meaning.
On the basis of analysis and summary lot of domestic and foreign transient heat flow meter measuring principle, research and utilization thin film technique, production
Thermal resistance thin film thermoelectric heap-type transient heat flow meter is gone out, this heat-flow meter had both inherited heat resistance heat flow meter and simply measured original
Reason and method, while the measurement of the big hot-fluid of transient state can be carried out using thin film technique again, it has a wide range of applications.
Through retrieving, application No. is 201390000234.5 Chinese invention patent, a kind of heat-flow meter of the patent disclosure and packet
The system of measurement hot-fluid containing the heat-flow meter, " a kind of heat-flow meter for the temperature parameter for measuring support construction, it includes: carrier,
Including at least one receiving unit and multiple temperature sensors, it is set at least one described receiving unit and is situated between by bonding
Matter is fixed in receiving unit, and receiving unit is placed in the both ends at least one direction of the carrier, by with each temperature
Temperature information is tested and recorded to the temperature that sensor is subjected to corresponding microstructure change, based on the temperature information received come
Determine the heat transmitting measured value at least part of total." design is the heat-flow meter based on temperature sensor, have
The disadvantages of volume is big, and structure is complicated, and response speed is slow, expensive.
Summary of the invention
The purpose of the present invention is to solve the shortcomings of the prior art place, provides a kind of thermal resistance thin film thermoelectric heap-type transient state
Heat-flow meter and preparation method are able to achieve the instantaneous measurement to heat flow density, have structure simple, small in size, to tested field
Small, fast response time is influenced, the features such as temperature range is big, and measurement accuracy is high is measured.
The present invention is achieved by the following technical solutions:
According to an aspect of the present invention, a kind of thermal resistance thin film thermoelectric heap-type transient heat flow meter is provided, comprising: ceramic base
Bottom, positive thermocouple, cathode thermocouple, thermocouple articulamentum, external thermal resistance layer and internal thermal resistance layer, in which:
Positive thermocouple, cathode thermocouple, thermocouple articulamentum, external thermal resistance layer and internal thermal resistance layer are all located at ceramic bases
On；Positive thermocouple and cathode thermocouple are docked by thermocouple articulamentum；External thermal resistance layer, internal thermal resistance layer are covered on positive thermoelectricity
The top of even summation cathode thermocouple, wherein external thermal resistance layer is covered on above the connected hot junction of positive thermocouple, cathode thermocouple,
Internal thermal resistance layer is covered on above the connected cold junction point of positive thermocouple, cathode thermocouple, the thickness of external thermal resistance layer and internal thermal resistance layer
It is different；One positive thermocouple and a cathode thermocouple connect to form a pair of of thermocouple, and multipair thermocouple head and the tail overlap joint is formed
Film thermopile, to increase the output signal of the heat-flow meter；
When external environment applies the hot-fluid with vertical direction on the heat-flow meter, due to external thermal resistance layer and internal thermal resistance layer
Thickness it is different, then there are temperature differences just to be had according to Seebeck effect for two neighboring cold thermocouple node and hot thermocouple node
Corresponding potential output, the output potential of film thermopile is related to heat flow density, surveys to realize to the transient state of heat flow density
Amount.
Preferably, the film thermopile uses ceramic bases, and ceramic bases have high temperature resistant, have with oxide thermoresistance layer
Good thermally matched characteristic.
Preferably, the film thermopile is composed in series by PtRh-Pt type thermoelectricity occasionally Pt/ITO type thermocouple, can be with
Improve the stability that the film heat-flow meter works at high temperature.
It is highly preferred that the shape of the film thermopile be zigzag, be perhaps zigzag be perhaps waveform or
For arc, depending on concrete shape is by the shape of exposure mask.
It is highly preferred that the head and the tail both ends of the film thermopile, respectively as lead end, the lead of two lead ends is adopted
With two kinds of identical metal fines, material is platinum filament or platinum-rhodium wire.
Preferably, the positive thermocouple using magnetically controlled sputter method deposition film, using exposure mask sputtering method or
Liftoff method realizes graphical, material selection platinum rhodium or platinum:
When film thermopile is that PtRh-Pt type thermocouple is connected in series, positive thermocouple material selects platinum rhodium；
When film thermopile is that Pt/ITO type thermocouple is connected in series, positive thermocouple material selects platinum.
Preferably, the cathode thermocouple using magnetically controlled sputter method deposition film, using exposure mask sputtering method or
Liftoff method realizes graphical, material selection platinum or ITO:
When film thermopile is that PtRh-Pt type thermocouple is connected in series, material selection platinum；
When film thermopile is that Pt/ITO type thermocouple is connected in series, material selection ITO.
It it is highly preferred that the shape of the positive thermocouple and cathode thermocouple is strip, or is arc, Huo Zhewei
Diamond shape, concrete shape are set by the shape of exposure mask.
Preferably, the thermocouple articulamentum is made of sputtering chromium or titanium film material, to increase positive thermocouple
With the binding force of cathode thermocouple；
The thermocouple articulamentum with a thickness of 5~15nm, thickness is relative to positive thermocouple and cathode thermocouple
Thickness ignore.
Preferably, the external thermal resistance layer, internal thermal resistance layer are same material, using sputtering silica or are coated with poly-
Acid imide (PI) formation；The selection of material is depending on working environment:
Under low-temperature working environment, i.e. temperature≤400 DEG C, external thermal resistance layer, internal thermal resistance layer material use polyimides；
Under high-temperature work environment, i.e. 400 DEG C of temperature >, external thermal resistance layer, internal thermal resistance layer material use silica, with
Increase measurement range, improve measurement accuracy, do thermoresistance layer using both materials, not only there is good heat insulation, may be used also
Using the protective layer as the film heat-flow meter, prevent from aoxidizing.
It is highly preferred that the external thermal resistance layer, internal thermal resistance layer are round, rectangular, polygon, concrete shape is according to exposure mask shape
Shape setting.
Preferably, the sensitivity for improving the film heat-flow meter can be by the logarithm of thermocouple in increase film thermopile
It is realized with the thickness difference of increase external thermal resistance layer and internal thermal resistance layer, is not required to carry out signal enhanced processing again.
According to another aspect of the present invention, a kind of preparation side of thermal resistance thin film thermoelectric heap-type transient heat flow meter is provided
Method, which comprises
The first step realizes figure using magnetically controlled sputter method deposition film, using exposure mask sputtering method or liftoff method
Change, forms positive thermocouple on a ceramic substrate；
It is coupled to form one layer of thermoelectricity at the both ends of the positive thermocouple of the first step for second step, the method sputtered using exposure mask
Layer is connect, size is according to design requirement flexible modulation；
Third step realizes figure using magnetically controlled sputter method deposition film, using exposure mask sputtering method or liftoff method
Change, docks to form cathode thermocouple in the thermocouple articulamentum upper surface of second step and with the positive thermocouple of first step head and the tail；
4th step, using sputtering silica or the method that is coated with polyimides (PI), in positive thermocouple and cathode
Thermocouple upper surface and surrounding form thermoresistance layer；
5th step, the method using mask etching remove outer ring annular thermoresistance layer to form external thermal resistance layer, are not etched
Thermoresistance layer is internal thermal resistance layer, and external thermal resistance layer is different with internal thermal resistance thickness degree.
Compared with prior art, the beneficial effects of the present invention are:
Thermal resistance thin film thermoelectric heap-type transient heat flow meter of the present invention has small in size, fast response time using thin film technique
Characteristic, can be carried out the measurement of the big hot-fluid of transient state.Ceramics substrate has high temperature resistant, has good heat with oxide thermoresistance layer
Matched characteristic.
Further, in the present invention, the variation of the temperature difference by directly measuring two o'clock in the short time, to obtain passing through Jie
The heat flow of matter after measuring two o'clock temperature as traditional hot-fluid, then asks the variation of temperature difference.
Further, in the present invention, the film heat-flow meter connects to form film thermopile using multipair thermocouple, energy
Amplify the output signal of the film heat-flow meter.
Further, in the present invention, the sensitivity for improving the heat-flow meter can be by increasing thermoelectricity in film thermopile
Even logarithm is realized with the thickness difference for increasing external thermal resistance layer and internal thermal resistance layer, is not required to carry out signal enhanced processing again.
Further, in the present invention, platinum rhodium and platinum and ITO material is respectively adopted in positive thermocouple and cathode thermocouple, can
To improve the stability that the film heat-flow meter works at high temperature；
Further, in the present invention, thermal resistance layer material uses polyimides (PI) or SiO2, (temperature under cryogenic
≤ 400 DEG C) work can be used polyimides (PI) and makees thermoresistance layer, and titanium dioxide can be used in (400 DEG C of temperature >) under the high temperature conditions
Silicon makees thermoresistance layer, can expand temperature-measuring range, improves measurement accuracy.Thermoresistance layer is done using both materials, is not only had good
Heat insulation is also used as the protective layer of the film heat-flow meter, prevents from aoxidizing.
Detailed description of the invention
Upon reading the detailed description of non-limiting embodiments with reference to the following drawings, other feature of the invention,
Objects and advantages will become more apparent upon:
Fig. 1 is the heat-flow meter diagrammatic cross-section of one embodiment of the invention；
Fig. 2 is the overall structure schematic top plan view that thermoresistance layer is not added of one embodiment of the invention；
Fig. 3 is the overall structure schematic top plan view after the heating resistance layer of one embodiment of the invention；
In figure: 1 be ceramic substrate, 2 be positive very hot galvanic couple, 3 be negative very hot galvanic couple, 4 be thermocouple articulamentum, 5 be outer heat
Resistance layer, 6 are internal thermal resistance layer.
Specific embodiment
The present invention is described in detail combined with specific embodiments below.Following embodiment will be helpful to the technology of this field
Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that the ordinary skill of this field
For personnel, without departing from the inventive concept of the premise, various modifications and improvements can be made.These belong to the present invention
Protection scope.
As shown in Figure 1, a kind of thermal resistance thin film thermoelectric heap-type transient heat flow meter, comprising: ceramic substrate 1, positive thermocouple
2, cathode thermocouple 3, thermocouple articulamentum 4, external thermal resistance layer 5 and internal thermal resistance layer 6, in which:
Positive thermocouple 2, cathode thermocouple 3, thermocouple articulamentum 4, external thermal resistance layer 5 and internal thermal resistance layer 6 are all located at ceramics
On substrate 1；Positive thermocouple 2 and cathode thermocouple 3 are docked by thermocouple articulamentum 4；External thermal resistance layer 5 and internal thermal resistance layer 6 cover
The top in positive thermocouple 2, cathode thermocouple 3 is covered, external thermal resistance layer 5 is covered on positive thermocouple 2,3 heat knot of cathode thermocouple
Point top, internal thermal resistance layer 6 are covered on the top of positive thermocouple 2,3 cold junction point of cathode thermocouple；
When external environment applies the hot-fluid with vertical direction on the heat-flow meter, due to external thermal resistance layer 5 and internal thermal resistance
The thickness of layer 6 is different, and positive thermocouple 2,3 hot junction of cathode thermocouple and positive thermocouple 2,3 cold junction point of cathode thermocouple are deposited
In temperature difference, just there is corresponding potential to export, a positive thermocouple 2 and a series connection of cathode thermocouple 3 form a pair of of thermoelectricity
Even, multipair thermocouple head and the tail overlap joint forms film thermopile, and the potential of its output of the film thermopile is related to heat flow density,
To realize the instantaneous measurement to heat flow density.
As shown in Fig. 2, the anode thermocouple 2 and cathode thermocouple 3 are docked by thermocouple articulamentum 4, an anode
Thermocouple 2 and a series connection of cathode thermocouple 3 form a pair of of thermocouple, and multipair thermocouple joins end to end to form film thermopile,
The output signal of the heat-flow meter can be amplified.
The anode thermocouple 2, cathode thermocouple 3 shape be the shape by exposure mask and set, can be strip,
Arc, diamond shape.Multipair thermocouple head and the tail form film thermopile after overlapping, and the shape of the film thermopile is also by exposure mask shape
Shape setting, it can be zigzag, zigzag, waveform, arc.
The anode thermocouple 2 and cathode thermocouple 3 are the metal strip prepared using exposure mask sputtering method, described just very hot
Galvanic couple 2 selects the good platinum rhodium of high temperatures or alloy platinum material to be formed: when film thermopile is PtRh-Pt type thermocouple,
Material selection platinum rhodium；When film thermopile is Pt/ITO type thermocouple, material selection Pt.
The cathode thermocouple 3 uses magnetically controlled sputter method deposition film, utilizes exposure mask sputtering method or liftoff method
Realize that graphical, the good platinum of selection high temperatures or ITO material are formed: when film thermopile is PtRh-Pt type thermoelectricity
When even, material selection platinum；When film thermopile is Pt/ITO type thermocouple, material selection ITO.
The thermocouple articulamentum 4 is formed using sputtering chromium or titanium film, for increasing positive thermocouple 2, cathode thermoelectricity
Even 3 binding force, the thickness with a thickness of several nanometers (5~15nm of range), relative to positive thermocouple 2 and cathode thermocouple 3
It can be ignored.
As shown in figure 3, in one embodiment, using sputtering silica or being coated with the method for polyimides (PI) just
Very hot galvanic couple 2 and 3 upper surface of cathode thermocouple and surrounding form thermoresistance layer, then make external thermal resistance layer 5 and interior with the method etched
The thickness of thermoresistance layer 6 is different.
The good silica of heat insulation can be used in the material of the external thermal resistance layer 5 and internal thermal resistance layer 6 or polyamides is sub-
The selection of amine (PI), material can be depending on operating condition:
Under the conditions of low-temperature working (temperature is less than 400 DEG C), polyimides is can be used in external thermal resistance layer 5 and internal thermal resistance layer 6
(PI) material；
Under high temperature operating conditions (temperature is greater than 400 DEG C), silica material is can be used in external thermal resistance layer 5 and internal thermal resistance layer 6
Material；
And the shape of the external thermal resistance layer 5 and internal thermal resistance layer 6 is set by mask shape, can be round, rectangular, polygon
Shape.External thermal resistance layer 5 and internal thermal resistance layer 6, thickness is different, and the thickness of external thermal resistance layer 5 is less than 6 thickness of internal thermal resistance layer.
The structure based on above-mentioned thermal resistance thin film thermoelectric heap-type transient heat flow, the following are the heat-flow meter preparation methods:
The first step realizes figure using magnetically controlled sputter method deposition film, using exposure mask sputtering method or liftoff method
Change, forms positive thermocouple 2 in ceramic bases 1, when film thermopile is PtRh-Pt type thermocouple, material selection platinum rhodium；
When film thermopile is Pt/ITO type thermocouple, material selection Pt；
It is coupled to form one layer of thermoelectricity at the both ends of the positive thermocouple 2 of the first step for second step, the method sputtered using exposure mask
Layer 4 is connect, for size according to design requirement flexible modulation, thickness range is 5~15nm, material selection chromium or titanium；
Third step realizes figure using magnetically controlled sputter method deposition film, using exposure mask sputtering method or liftoff method
Change, docks to form cathode thermocouple from beginning to end in 4 upper surface of thermocouple articulamentum of second step and with the positive thermocouple 2 of the first step
3, when film thermopile is PtRh-Pt type thermocouple, material selection platinum；When film thermopile is Pt/ITO type thermocouple,
Material selection ITO；
4th step, using sputtering silica or the method that is coated with polyimides, in positive thermocouple 2 and cathode thermoelectricity
Even 3 upper surfaces and surrounding form thermoresistance layer；
5th step, the method using mask etching remove certain thickness outer ring annular thermoresistance layer, to form external thermal resistance
Layer 5；The thermoresistance layer not being etched is internal thermal resistance layer 6, and external thermal resistance layer 5 is different with 6 thickness of internal thermal resistance layer, and external thermal resistance layer 5
Thickness be less than 6 thickness of internal thermal resistance layer.
Described removes certain thickness outer ring annular thermoresistance layer, and wherein certain thickness is according to use condition flexible modulation,
And the thickness is formed by the thickness of thermoresistance layer less than the 4th step.
The good silica of heat insulation can be used in the material of the external thermal resistance layer 5 and internal thermal resistance layer 6 or polyamides is sub-
The selection of amine (PI), material can be depending on operating condition: (temperature is less than 400 DEG C), external thermal resistance layer 5 under the conditions of low-temperature working
Polyimides (PI) material can be used with internal thermal resistance layer 6；(temperature is greater than 400 DEG C), 5 He of external thermal resistance layer under high temperature operating conditions
Earth silicon material can be used in internal thermal resistance layer 6；
The present invention provides a kind of thermal resistance thin film thermoelectric heap-type transient heat flow meter, using thin film technique, has small in size, sound
Fireballing characteristic is answered, can be carried out the measurement of the big hot-fluid of transient state；Ceramics substrate has high temperature resistant, has with oxide thermoresistance layer
Good thermally matched characteristic；Film thermopile is made of PtRh-Pt type thermoelectricity occasionally Pt/ITO thermocouple, can be improved described
The stability that film heat-flow meter works at high temperature；It connects using multipair positive thermocouple and cathode thermocouple and to form thermoelectric pile,
The output signal of the heat-flow meter can be amplified；Thermal resistance layer material uses polyimides (PI) or SiO according to working environment2, can expand
Big temperature-measuring range；Thermoresistance layer is done using both materials, not only there is good heat insulation, be also used as the heat-flow meter
Protective layer, to prevent block.
Specific embodiments of the present invention are described above.It is to be appreciated that the invention is not limited to above-mentioned
Particular implementation, those skilled in the art can make various deformations or amendments within the scope of the claims, this not shadow
Ring substantive content of the invention.
Claims (9)
1. a kind of thermal resistance thin film thermoelectric heap-type transient heat flow meter characterized by comprising ceramic bases (1), positive thermocouple
(2), cathode thermocouple (3), thermocouple articulamentum (4), external thermal resistance layer (5) and internal thermal resistance layer (6), in which: the anode thermoelectricity
Even (2), cathode thermocouple (3), thermocouple articulamentum (4), external thermal resistance layer (5) and internal thermal resistance layer (6) are each provided at ceramic bases
(1) on；Positive thermocouple (2) is docked with cathode thermocouple (3) by thermocouple articulamentum (4)；External thermal resistance layer (5), internal thermal resistance
Layer (6) is covered on the top of positive thermocouple (2) and cathode thermocouple (3), and wherein external thermal resistance layer (5) is covered on positive thermocouple
(2), the top of the connected hot junction of cathode thermocouple (3), internal thermal resistance layer (6) are covered on positive thermocouple (2), cathode thermocouple
(3) thickness of the top of connected cold junction point, external thermal resistance layer (5) is less than internal thermal resistance layer (6) thickness；One positive thermocouple (2)
A pair of of thermocouple is formed with cathode thermocouple (3) series connection, multipair thermocouple head and the tail overlap joint forms film thermopile, to increase
The output signal of the heat-flow meter；
When external environment applies the hot-fluid with vertical direction on the heat-flow meter, due to external thermal resistance layer (5) and internal thermal resistance layer
(6) thickness is different, then two neighboring cold thermocouple node and hot thermocouple node be there are temperature difference, according to Seebeck effect,
Just there is corresponding potential to export, the output potential of film thermopile is related to heat flow density, to realize the wink to heat flow density
State measurement.
2. a kind of thermal resistance thin film thermoelectric heap-type transient heat flow meter according to claim 1, which is characterized in that described is thin
Film thermoelectric pile is composed in series by PtRh-Pt type thermoelectricity occasionally Pt/ITO type thermocouple.
3. a kind of thermal resistance thin film thermoelectric heap-type transient heat flow meter according to claim 2, which is characterized in that described is thin
The shape of film thermoelectric pile is zigzag or zigzag or waveform or arc；Distinguish at the head and the tail both ends of the film thermopile
As lead end, the lead of two lead ends uses two kinds of identical metal fines, and material is platinum filament or platinum-rhodium wire.
4. a kind of thermal resistance thin film thermoelectric heap-type transient heat flow meter according to claim 2, which is characterized in that
When film thermopile is that PtRh-Pt type thermocouple is connected in series, positive thermocouple (2) material selection platinum rhodium, cathode heat
Galvanic couple (3) material selection platinum；
When film thermopile is that Pt/ITO type thermocouple is connected in series, positive thermocouple (2) material selection platinum, cathode thermocouple
(3) material selection ITO.
5. a kind of thermal resistance thin film thermoelectric heap-type transient heat flow meter according to claim 1, which is characterized in that the outer heat
Resistance layer (5), internal thermal resistance layer (6) are same material, are formed using sputtering silica or being coated with polyimides.
6. a kind of thermal resistance thin film thermoelectric heap-type transient heat flow meter according to claim 5, which is characterized in that in low temperature work
Make under environment, i.e. temperature≤400 DEG C, external thermal resistance layer (5), internal thermal resistance layer (6) material use polyimides；
Under high-temperature work environment, i.e. 400 DEG C of temperature >, external thermal resistance layer (5), internal thermal resistance layer (6) material use silica.
7. a kind of thermal resistance thin film thermoelectric heap-type transient heat flow meter according to claim 1, which is characterized in that the thermoelectricity
Even articulamentum (4) is made of sputtering chromium or titanium film material；
The thermocouple articulamentum (4) with a thickness of 5~15nm, thickness is relative to positive thermocouple (2) and cathode thermoelectricity
The thickness of even (3) is ignored.
8. a kind of thermal resistance thin film thermoelectric heap-type transient heat flow meter according to claim 1-7, which is characterized in that
It is realized described in raising by increasing the thickness difference of the logarithm of thermocouple, increase external thermal resistance layer and internal thermal resistance layer in film thermopile
The sensitivity of heat-flow meter is not required to carry out signal enhanced processing again.
9. a kind of preparation method of thermal resistance thin film thermoelectric heap-type transient heat flow meter according to claim 1-8,
It is characterized in that, the preparation method includes the following steps:
The first step, realized using magnetically controlled sputter method deposition film, using exposure mask sputtering method or liftoff method it is graphical,
Positive thermocouple (2) is formed on ceramic bases (1)；
Second step, the method sputtered using exposure mask form one layer of thermocouple connection at the both ends of the positive thermocouple (2) of the first step
Layer (4)；
Third step, realized using magnetically controlled sputter method deposition film, using exposure mask sputtering method or liftoff method it is graphical,
It docks to form cathode thermocouple with the positive thermocouple (2) of first step head and the tail in thermocouple articulamentum (4) upper surface of second step
(3)；
4th step, using sputtering silica or the method that is coated with polyimides, in positive thermocouple (2) and cathode thermocouple
(3) upper surface and surrounding form thermoresistance layer；
5th step, the method using mask etching remove outer ring annular thermoresistance layer, to form external thermal resistance layer (5)；It is not etched
Thermoresistance layer be internal thermal resistance layer (6), and external thermal resistance layer (5) is different with internal thermal resistance layer (6) thickness.
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