CN110306162A - A kind of thermoelectric pile heat flow transducer and its manufacture craft - Google Patents
A kind of thermoelectric pile heat flow transducer and its manufacture craft Download PDFInfo
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- CN110306162A CN110306162A CN201910598876.3A CN201910598876A CN110306162A CN 110306162 A CN110306162 A CN 110306162A CN 201910598876 A CN201910598876 A CN 201910598876A CN 110306162 A CN110306162 A CN 110306162A
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- thermoelectric pile
- lines
- heat flow
- ceramic substrate
- flow transducer
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/04—Alloys based on a platinum group metal
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K17/00—Measuring quantity of heat
- G01K17/06—Measuring quantity of heat conveyed by flowing media, e.g. in heating systems e.g. the quantity of heat in a transporting medium, delivered to or consumed in an expenditure device
- G01K17/08—Measuring quantity of heat conveyed by flowing media, e.g. in heating systems e.g. the quantity of heat in a transporting medium, delivered to or consumed in an expenditure device based upon measurement of temperature difference or of a temperature
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
Abstract
A kind of thermoelectric pile heat flow transducer and its manufacture craft, wherein technique is for example next: by ceramic substrate heat temperature raising, by platinum Polarium sputtering of materials on ceramic substrate；Two: forming platinum Polarium film；Three: thermoelectric pile anode lines are etched by photoetching process；Four: bronze, palladium powder, glass adhesive powder and organic carrier are mixed and made into negative electrode material slurry；Five: gold-palladium film is made；Six: thermoelectric pile cathode lines are etched by photoetching process；Step 7: encapsulation.Sensor is to be provided with sensors A and sensor B, and be arranged side by side；Wherein sensors A includes circular ceramic substrate, and circular ring shape distribution is provided with thermoelectric pile anode lines on a surface of the ceramic substrate, is respectively arranged with thermoelectric pile cathode lines between adjacent thermoelectric pile anode lines；Thermoelectric pile anode lines and thermoelectric pile cathode lines head and the tail concatenate.
Description
Technical field
The present invention relates to temperature sensor technology fields, and in particular to a kind of thermoelectric pile heat flow transducer and its production work
Skill.
Background technique
Thermoelectric pile heat flow transducer is that thermocouple signal is carried out to accumulation superposition amplification, improves the resolution of sensor
Rate improves measurement accuracy and reduces the requirement to detection instrument.Thermoelectric pile heat flow transducer currently on the market mainly uses K-type
Thermo wires series connection, but it is limited to the influence of thermo wires processing diameter and following process means, it is difficult to improve thermoelectricity in effective area
The logarithm of heap, 1000 DEG C or more the warm area K-type thermoelectric pile losts of life, reliability reduce.
Summary of the invention
In view of the deficiencies of the prior art, the present invention proposes a kind of easy making process, using thick film print technology and vacuum coating
Technique makes thermoelectric pile, can reduce thermoelectric pile positive and negative anodes line thickness and spacing, can increase thermoelectric pile logarithm, improves thermoelectricity
The resolution ratio of heap, signal are effectively amplified, and the temperature-measuring range of sensor is improved.The thermoelectric pile heat flow transducer and its production
Technique, specific technical solution are as follows:
A kind of manufacture craft of thermoelectric pile heat flow transducer, the step of use, is as follows:
Step 1: by ceramic substrate heat temperature raising, under vacuum conditions, by platinum Polarium by the way of magnetron sputtering
Sputtering of materials is on ceramic substrate；
Step 2: platinum Polarium film is formed through Overheating Treatment；
Step 3: platinum Polarium film is etched by thermoelectric pile anode lines by photoetching process, the thermoelectric pile electrode line
Item is evenly distributed on ceramic substrate, and constitutes circular ring shape；
Step 4: bronze, palladium powder, glass adhesive powder and organic carrier are mixed and made into negative electrode material slurry；
Step 5: gold-palladium film is made by thick film print technology in negative electrode material slurry；
Step 6: gold-palladium film is etched by thermoelectric pile cathode lines by photoetching process, the thermoelectric pile cathode lines are uniform
It is distributed between the adjacent thermoelectric pile anode lines, and the thermoelectric pile cathode lines and thermoelectric pile anode lines head and the tail phase
Even；
Step 7: SiO is used2-B2O3Glass-encapsulated.
Method to better implement the present invention, further are as follows:
Platinum Polarium quality of materials ratio is 55 palladiums: 31 platinum: 14 gold medals in the step 1.The thermocouple of alloy production is just
Pole material generates thermoelectrical potential at 100 DEG C up to 32uV/ DEG C, and thermoelectrical potential is generated at 1000 DEG C up to 45uV/ DEG C.
The magnetron sputtering is wherein applied on palladium target using three independent independent targets while splash-proofing sputtering metal palladium, platinum and gold
The power of 250W applies the power of 172W on platinum target, applies the power of 64W on gold target.Platinum Polarium material is realized to make pottery
The momentum difference of the target ionic palladium sputtered, platinum, gold is overcome, is difficult to be evenly distributed on ceramics with distribution on ceramic chip
On substrate, it is not achieved 55 palladiums of design: 31 platinum: 14 gold medals, the technical issues of alloying component requires.
Ceramic substrate heating temperature is 200-220 degrees Celsius in the step 1.
Vacuum state is specially 10 in the step 1-3The vacuum state of pa, and it is filled with argon gas and nitrogen that ratio is 2:1.
Bronze in the step 4, palladium powder, glass adhesive powder and organic carrier mass ratio be 65:35:10:20.This ratio
It is 1uV/ DEG C that the thermocouple negative electrode material of example production, which generates thermoelectrical potential at 100 DEG C, and thermoelectrical potential is generated at 1000 DEG C and is
2.4uV/℃.The film electric performance stablity of production, film thickness can be greater than 2um.
The step 5 prints out uniform gold-palladium film, the gold-palladium that will be completed for printing specifically, by thick film print technology
Film is sintered in diffusion furnace, 6 DEG C/minute of heating rate and 1200 DEG C of sintering temperatures, keeps the temperature duration 50 minutes, increases gold-palladium film layer
Adhesive force between ceramic substrate improves the stability of film layer.
A kind of thermoelectric pile heat flow transducer is provided with sensors A and sensor B, the knot of the sensors A and sensor B
Structure is identical, and is arranged side by side；Wherein the sensors A includes circular ceramic substrate, on a surface of the ceramic substrate
Circular ring shape distribution is provided with thermoelectric pile anode lines, and the thermoelectric pile anode lines and the ceramic substrate radial direction phase
Together, thermoelectric pile cathode lines are respectively arranged between the adjacent thermoelectric pile anode lines；The thermoelectric pile anode lines
It is concatenated with thermoelectric pile cathode lines head and the tail；Glass is covered on the surface of the thermoelectric pile anode lines and thermoelectric pile cathode lines
Glass carries out insulation-encapsulated.
Structure to better implement the present invention, further are as follows:
The thermoelectric pile anode lines are platinum Polarium material, and the thermoelectric pile cathode lines are rhotanium material,
The glass of the surface of the thermoelectric pile anode lines and thermoelectric pile cathode lines covering is the SiO that softening temperature is greater than 800 DEG C2-
B2O3It is glass, and adulterates the Al of 5%-15%2O3, MgO oxide.
The angle of adjacent the thermoelectric pile anode lines and thermoelectric pile cathode lines is 4.9 degree to 6.9 degree.
The invention has the benefit that using thick film print technology and technique for vacuum coating production thermoelectric pile, easy making process,
And thermoelectric pile positive and negative anodes line thickness and spacing can be reduced, increase thermoelectric pile logarithm, improve the resolution ratio of thermoelectric pile, signal obtains
To effective amplification, the thermoelectrical potential that specific every degree temperature difference generates is increased to 2000uv, and potential is 50-100 times of conventional thermocouple,
The minor change (0.01 DEG C) of the temperature difference, thermoelectric pile can rapid survey.Particularly suitable for detecting the reaction process in drug response,
Equipment guarantee is brought for the Pharmaceutical Analysis in China；
Sensor line figure is routed using same circular planes, and the temperature change that 0.05 degree of circle ring center can all exist rapidly
The inner ring of this thermoelectric pile and outer interannular formation temperature are poor, so that two interpolar of thermocouple of this thermoelectric pile is generated potential, which passes through
Thermoelectric pile is overlapped amplification, passes through the potential difference of two thermoelectric piles of measurement left and right, so that it may measure left and right circle ring center rapidly
Heat flow.Two kinds of materials of thermocouple are routed using same circular planes sector, end to end, make the hot and cold side distance of thermocouple
It elongates, measurement accuracy is higher.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of ceramic substrate in the present invention.
Fig. 2 is thermoelectric pile cathode lines Lithographic template machining sketch chart in the present invention.
Fig. 3 is thermoelectric pile anode lines Lithographic template machining sketch chart in the present invention.
Specific embodiment
The preferred embodiments of the present invention will be described in detail with reference to the accompanying drawing, so that advantages and features of the invention energy
It is easier to be readily appreciated by one skilled in the art, so as to make a clearer definition of the protection scope of the present invention.
A kind of the step of manufacture craft of thermoelectric pile heat flow transducer, use, is as follows:
Step 1: it is 200-220 degrees Celsius that ceramic substrate, which is heated to, 10-3Under the vacuum state of pa, and it is filled with
Ratio is the argon gas and nitrogen of 2:1, uses three independent independent targets simultaneously by mass ratio for 55 palladiums: 31 platinum: the platinum palladium of 14 gold medals
Alloy material sputters on ceramic substrate, wherein applies the power of 250W on palladium target, applies the power of 172W, gold target on platinum target
The upper power for applying 64W；
Step 2: platinum Polarium film is formed through Overheating Treatment；
Step 3: platinum Polarium film is etched by thermoelectric pile anode lines by photoetching process, the thermoelectric pile electrode line
Item is evenly distributed on ceramic substrate, and constitutes circular ring shape；
Step 4: bronze, palladium powder, glass adhesive powder and organic carrier 65:35:10:20 ratio in mass ratio are mixed
It closes, after grinding, is configured to negative electrode material slurry；
Step 5: gold-palladium film is made by thick film print technology in negative electrode material slurry, the gold-palladium film being completed for printing is existed
It is sintered in diffusion furnace, the sintering temperature of 6 DEG C/min of heating rate to 1200 DEG C, keeps the temperature duration 50 minutes, increase gold-palladium film layer
Adhesive force between ceramic substrate improves the stability of film layer；
Step 6: gold-palladium film is etched by thermoelectric pile cathode lines by photoetching process, the thermoelectric pile cathode lines are uniform
It is distributed between the adjacent thermoelectric pile anode lines, and the thermoelectric pile cathode lines and thermoelectric pile anode lines head and the tail phase
Even；
Step 7: it is greater than 800 DEG C of SiO using softening temperature2-B2O3It is glass, adulterates the Al of 5%-15%2O3, MgO etc.
Oxide improves the mechanical strength and chemical stability of glass, reduces the coefficient of expansion of glass, increases low temperature characteristics viscosity, enhancing
The chemical stability of glass reduces the crystallization of glass, improves the hardness and heat resistance of glass.
As shown in Figure 1, Figure 2 and Figure 3: the thermoelectric pile heat flow transducer in above-described embodiment is provided with sensors A and sensing
Device B, the sensors A is identical with the structure of sensor B, and is arranged side by side；
Wherein the sensors A includes circular ceramic substrate, in circular ring shape point on a surface of the ceramic substrate
Cloth is provided with thermoelectric pile anode lines, and the thermoelectric pile anode lines are identical as the ceramic substrate radial direction, adjacent
Thermoelectric pile cathode lines, and adjacent thermoelectric pile anode lines and thermoelectric pile are respectively arranged between the thermoelectric pile anode lines
The angle of cathode lines is 5.9 degree；The thermoelectric pile anode lines and thermoelectric pile cathode lines head and the tail concatenate；In the thermoelectric pile
The surface of positive lines and thermoelectric pile cathode lines is covered with glass, carries out insulation-encapsulated.The wherein thermoelectric pile anode lines
For platinum Polarium material, the thermoelectric pile cathode lines are rhotanium material, the thermoelectric pile anode lines and thermoelectric pile
The glass of the surface covering of cathode lines is the SiO that softening temperature is greater than 800 DEG C2-B2O3It is glass, and adulterates 5%-15%'s
Al2O3, MgO oxide.
Claims (10)
1. a kind of manufacture craft of thermoelectric pile heat flow transducer, which is characterized in that the step of use is as follows:
Step 1: by ceramic substrate heat temperature raising, under vacuum conditions, by platinum Polarium material by the way of magnetron sputtering
It sputters on ceramic substrate；
Step 2: platinum Polarium film is formed through Overheating Treatment；
Step 3: platinum Polarium film is etched by thermoelectric pile anode lines by photoetching process, the thermoelectric pile anode lines are equal
It is even to be distributed on ceramic substrate, and constitute circular ring shape；
Step 4: bronze, palladium powder, glass adhesive powder and organic carrier are mixed and made into negative electrode material slurry；
Step 5: gold-palladium film is made by thick film print technology in negative electrode material slurry；
Step 6: gold-palladium film is etched by thermoelectric pile cathode lines by photoetching process, which is uniformly distributed
Between the adjacent thermoelectric pile anode lines, and the thermoelectric pile cathode lines and thermoelectric pile anode lines join end to end；
Step 7: SiO is used2-B2O3Glass-encapsulated.
2. the manufacture craft of thermoelectric pile heat flow transducer according to claim 1, it is characterised in that: platinum palladium in the step 1
Alloy material mass ratio is 55 palladiums: 31 platinum: 14 gold medals.
3. the manufacture craft of thermoelectric pile heat flow transducer according to claim 2, it is characterised in that: the magnetron sputtering uses
Three independent independent targets while splash-proofing sputtering metal palladium, platinum and gold wherein apply the power of 250W, apply 172W on platinum target on palladium target
Power, apply the power of 64W on gold target.
4. the manufacture craft of thermoelectric pile heat flow transducer according to claim 1, it is characterised in that: ceramic in the step 1
Substrate heating temperature is 200-220 degrees Celsius.
5. the manufacture craft of thermoelectric pile heat flow transducer according to claim 1, it is characterised in that: vacuum in the step 1
State is specially 10-3The vacuum state of pa, and it is filled with argon gas and nitrogen that ratio is 2: 1.
6. the manufacture craft of thermoelectric pile heat flow transducer according to claim 1, it is characterised in that: golden in the step 4
Powder, palladium powder, glass adhesive powder and organic carrier mass ratio be 65: 35: 10: 20.
7. the manufacture craft of thermoelectric pile heat flow transducer according to claim 1, it is characterised in that: the step 5 is specific
For, by thick film print technology, uniform gold-palladium film is printed out, the gold-palladium film being completed for printing is sintered in diffusion furnace, 6 DEG C/
The heating rate and 1200 DEG C of sintering temperatures divided keep the temperature duration 50 minutes, increase the adhesive force between gold-palladium film layer and ceramic substrate,
Improve the stability of film layer.
8. a kind of thermoelectric pile heat flow transducer, it is characterised in that: be provided with sensors A and sensor B, the sensors A and biography
The structure of sensor B is identical, and is arranged side by side；
Wherein the sensors A includes circular ceramic substrate, is set on a surface of the ceramic substrate in circular ring shape distribution
Thermoelectric pile anode lines are equipped with, and the thermoelectric pile anode lines are identical as the ceramic substrate radial direction, described in adjacent
Thermoelectric pile cathode lines are respectively arranged between thermoelectric pile anode lines；
The thermoelectric pile anode lines and thermoelectric pile cathode lines head and the tail concatenate；
It is covered with glass on the surface of the thermoelectric pile anode lines and thermoelectric pile cathode lines, carries out insulation-encapsulated.
9. thermoelectric pile heat flow transducer according to claim 8, it is characterised in that: the thermoelectric pile anode lines are platinum porpezite
Alloy material, the thermoelectric pile cathode lines are rhotanium material, the thermoelectric pile anode lines and thermoelectric pile cathode lines
The glass of surface covering be that softening temperature is greater than 800 DEG C of SiO2-B2O3It is glass, and adulterates the Al of 5%-15%2O3、MgO
Oxide.
10. thermoelectric pile heat flow transducer according to claim 8, it is characterised in that: the adjacent thermoelectric pile anode lines
Angle with thermoelectric pile cathode lines is 4.9 degree to 6.9 degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910598876.3A CN110306162A (en) | 2019-07-04 | 2019-07-04 | A kind of thermoelectric pile heat flow transducer and its manufacture craft |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910598876.3A CN110306162A (en) | 2019-07-04 | 2019-07-04 | A kind of thermoelectric pile heat flow transducer and its manufacture craft |
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|---|---|---|---|---|
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2019
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|---|---|---|---|---|
| US3329533A (en) * | 1964-06-22 | 1967-07-04 | Engelhard Ind Inc | Noble metal thermocouple having base metal compensating leads |
| US3527620A (en) * | 1964-09-21 | 1970-09-08 | Gen Motors Corp | Method of using noble metal thermocouple |
| US5033866A (en) * | 1989-04-24 | 1991-07-23 | Mettler Toledo Ag | Multiple thermocouple sensor |
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| CN105209872A (en) * | 2013-03-22 | 2015-12-30 | 沃特世科技公司 | Thermopile differential scanning calorimeter sensor |
| CN103255385A (en) * | 2013-05-16 | 2013-08-21 | 上海大学 | Design method for composite target for magnetron sputtering |
| CN106017696A (en) * | 2016-07-13 | 2016-10-12 | 上海交通大学 | Thermal resistance-type thin film thermopile-type transient heat flow meter and manufacturing method |
| CN106840435A (en) * | 2016-12-27 | 2017-06-13 | 上海交通大学 | Transient temperature and heat flow density translocation sensor and preparation method thereof |
| CN108562381A (en) * | 2018-03-22 | 2018-09-21 | 中北大学 | Thin film sensor and preparation method thereof for measuring hot-fluid under hot environment |
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| 钱军浩: "《特种印刷新技术》", 31 August 2001, 中国轻工业出版社 * |
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Application publication date: 20191008 |
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